[go: up one dir, main page]

SG10201705999TA - Doped ald films for semiconductor patterning applications - Google Patents

Doped ald films for semiconductor patterning applications

Info

Publication number
SG10201705999TA
SG10201705999TA SG10201705999TA SG10201705999TA SG10201705999TA SG 10201705999T A SG10201705999T A SG 10201705999TA SG 10201705999T A SG10201705999T A SG 10201705999TA SG 10201705999T A SG10201705999T A SG 10201705999TA SG 10201705999T A SG10201705999T A SG 10201705999TA
Authority
SG
Singapore
Prior art keywords
semiconductor patterning
ald films
patterning applications
doped
doped ald
Prior art date
Application number
SG10201705999TA
Inventor
Shankar Swaminathan
Richard Phillips
Adrien Lavoie
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201705999TA publication Critical patent/SG10201705999TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG10201705999TA 2016-07-29 2017-07-21 Doped ald films for semiconductor patterning applications SG10201705999TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662368922P 2016-07-29 2016-07-29
US15/279,312 US10629435B2 (en) 2016-07-29 2016-09-28 Doped ALD films for semiconductor patterning applications

Publications (1)

Publication Number Publication Date
SG10201705999TA true SG10201705999TA (en) 2018-02-27

Family

ID=61010614

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201705999TA SG10201705999TA (en) 2016-07-29 2017-07-21 Doped ald films for semiconductor patterning applications

Country Status (6)

Country Link
US (1) US10629435B2 (en)
JP (1) JP6895836B2 (en)
KR (2) KR102273916B1 (en)
CN (2) CN113488379B (en)
SG (1) SG10201705999TA (en)
TW (1) TWI682056B (en)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
JP6814057B2 (en) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing methods, substrate processing devices, and programs
US10147611B1 (en) * 2017-08-28 2018-12-04 Nanya Technology Corporation Method for preparing semiconductor structures
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JP6833657B2 (en) * 2017-11-07 2021-02-24 東京エレクトロン株式会社 How to plasma etch the substrate
US11276572B2 (en) * 2017-12-08 2022-03-15 Tokyo Electron Limited Technique for multi-patterning substrates
WO2019168535A1 (en) * 2018-03-01 2019-09-06 Lam Research Corporation Silicon-based deposition for semiconductor processing
CN112005343B (en) 2018-03-02 2025-05-06 朗姆研究公司 Selective deposition using hydrolysis
CN111902918B (en) 2018-04-27 2024-07-26 株式会社国际电气 Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP7073924B2 (en) * 2018-06-06 2022-05-24 東京エレクトロン株式会社 A method or device for forming a thin film on a substrate using the atomic layer growth method.
US20190390341A1 (en) * 2018-06-26 2019-12-26 Lam Research Corporation Deposition tool and method for depositing metal oxide films on organic materials
JP7079686B2 (en) * 2018-07-27 2022-06-02 東京エレクトロン株式会社 Film formation method and film formation equipment
US11393665B2 (en) * 2018-08-10 2022-07-19 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with reduced arcing
US10991583B2 (en) * 2018-09-28 2021-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Self aligned litho etch process patterning method
US11551930B2 (en) * 2018-12-12 2023-01-10 Tokyo Electron Limited Methods to reshape spacer profiles in self-aligned multiple patterning
CN109456361B (en) * 2018-12-14 2021-08-24 苏州祺添新材料有限公司 Synthesis method of tri (trihydrocarbylsilyl) phosphite ester
WO2020176582A1 (en) * 2019-02-27 2020-09-03 Lam Research Corporation Semiconductor mask reshaping using a sacrificial layer
WO2020197864A1 (en) * 2019-03-22 2020-10-01 Lam Research Corporation Method for providing doped silicon
US11315787B2 (en) * 2019-04-17 2022-04-26 Applied Materials, Inc. Multiple spacer patterning schemes
JP7546000B2 (en) 2019-06-04 2024-09-05 ラム リサーチ コーポレーション Polymeric protective layers for reactive ion etching in patterning.
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
CN114830294A (en) * 2019-11-01 2022-07-29 应用材料公司 Crystallization resistant amorphous silicon based films
JP7412257B2 (en) * 2019-12-20 2024-01-12 東京エレクトロン株式会社 Etching method, substrate processing equipment, and substrate processing system
KR20220126743A (en) * 2020-01-14 2022-09-16 도쿄엘렉트론가부시키가이샤 Multiple patterning to selectively form the mandrel
WO2021172449A1 (en) * 2020-02-27 2021-09-02 Ａｇｃ株式会社 Manufacturing method for glass substrate and manufacturing method for euvl mask blank
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
US11232952B2 (en) 2020-03-05 2022-01-25 Nanya Technology Corporation Semiconductor device structure with fine patterns and method for forming the same
CN113517230B (en) * 2020-04-09 2023-12-08 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN113621942A (en) * 2020-05-06 2021-11-09 中国科学院微电子研究所 Aluminum-doped gallium oxide film and preparation method thereof
WO2021231138A1 (en) * 2020-05-11 2021-11-18 Lam Research Corporation Automated feedforward and feedback sequence for patterning cd control
KR102416148B1 (en) 2020-06-15 2022-07-04 고려대학교 산학협력단 Micro-led including optimized passivation layer and fabricating method thereof
US12412742B2 (en) 2020-07-28 2025-09-09 Lam Research Corporation Impurity reduction in silicon-containing films
US11264474B1 (en) * 2020-08-18 2022-03-01 Nanya Technology Corporation Semiconductor device with boron nitride layer and method for fabricating the same
CN114203874A (en) * 2020-09-17 2022-03-18 东莞市中图半导体科技有限公司 A patterned composite substrate, preparation method and LED epitaxial wafer
US11961739B2 (en) * 2020-10-05 2024-04-16 Applied Materials, Inc. Boron concentration tunability in boron-silicon films
US20220189771A1 (en) * 2020-12-10 2022-06-16 Applied Materials, Inc. Underlayer film for semiconductor device formation
US12077852B2 (en) * 2021-04-26 2024-09-03 Applied Materials, Inc. Metal-doped boron films
WO2023283144A1 (en) 2021-07-09 2023-01-12 Lam Research Corporation Plasma enhanced atomic layer deposition of silicon-containing films
US20230402285A1 (en) * 2022-06-14 2023-12-14 Applied Materials, Inc. Method of forming carbon-based spacer for euv photoresist patterns
WO2024073220A1 (en) * 2022-09-28 2024-04-04 Lam Research Corporation Layered metal oxide-silicon oxide films
JP2024175399A (en) * 2023-06-06 2024-12-18 ウシオ電機株式会社 Substrate processing method and modification unit
WO2024258350A1 (en) * 2023-06-15 2024-12-19 National University Of Singapore Method of forming boron-containing thin films and devices made thereof

Family Cites Families (281)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR93097E (en) 1965-10-11 1969-02-07 Ibm A method of depositing insulating films and electrical devices using such films.
US4158717A (en) 1977-02-14 1979-06-19 Varian Associates, Inc. Silicon nitride film and method of deposition
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs
US4500563A (en) 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US4575921A (en) 1983-11-04 1986-03-18 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
CA1327338C (en) 1987-02-02 1994-03-01 Chorng-Ping Chang Process for producing devices containing silicon nitride films
EP0313683A1 (en) 1987-10-30 1989-05-03 International Business Machines Corporation Method for fabricating a semiconductor integrated circuit structure having a submicrometer length device element
US5420067A (en) 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5091332A (en) 1990-11-19 1992-02-25 Intel Corporation Semiconductor field oxidation process
EP0519079B1 (en) 1991-01-08 1999-03-03 Fujitsu Limited Process for forming silicon oxide film
US5202272A (en) * 1991-03-25 1993-04-13 International Business Machines Corporation Field effect transistor formed with deep-submicron gate
US5230929A (en) 1992-07-20 1993-07-27 Dow Corning Corporation Plasma-activated chemical vapor deposition of fluoridated cyclic siloxanes
US5496608A (en) 1993-09-22 1996-03-05 Brother Kogyo Kabushiki Kaisha Optical recording medium
US5528719A (en) * 1993-10-26 1996-06-18 Sumitomo Metal Mining Company Limited Optical fiber guide structure and method of fabricating same
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5670432A (en) 1996-08-01 1997-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal treatment to form a void free aluminum metal layer for a semiconductor device
US5731235A (en) 1996-10-30 1998-03-24 Micron Technology, Inc. Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor
US5891805A (en) 1996-12-13 1999-04-06 Intel Corporation Method of forming contacts
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
US6153519A (en) 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US6225175B1 (en) * 1997-06-20 2001-05-01 Texas Instruments Incorporated Process for defining ultra-thin geometries
US5854105A (en) * 1997-11-05 1998-12-29 Vanguard International Semiconductor Corporation Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
US5856003A (en) 1997-11-17 1999-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming pseudo buried layer for sub-micron bipolar or BiCMOS device
US5976990A (en) 1998-01-09 1999-11-02 Micron Technology, Inc. Method for optimization of thin film deposition
US6080676A (en) * 1998-09-17 2000-06-27 Advanced Micro Devices, Inc. Device and method for etching spacers formed upon an integrated circuit gate conductor
US6197701B1 (en) 1998-10-23 2001-03-06 Taiwan Semiconductor Manufacturing Company Lightly nitridation surface for preparing thin-gate oxides
US6380056B1 (en) 1998-10-23 2002-04-30 Taiwan Semiconductor Manufacturing Company Lightly nitridation surface for preparing thin-gate oxides
US6228779B1 (en) 1998-11-06 2001-05-08 Novellus Systems, Inc. Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
US6403416B1 (en) * 1999-01-07 2002-06-11 Taiwan Semiconductor Manufacturing Company Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)
KR100273473B1 (en) 1999-04-06 2000-11-15 이경수 Method for forming a thin film
US6294102B1 (en) * 1999-05-05 2001-09-25 International Business Machines Corporation Selective dry etch of a dielectric film
KR100340716B1 (en) 1999-10-29 2002-06-20 윤종용 method for forming silicion nitride
JP5073902B2 (en) 1999-11-02 2012-11-14 東京エレクトロン株式会社 Method and apparatus for supercritical processing of multiple workpieces
KR100338125B1 (en) 1999-12-31 2002-05-24 구본준, 론 위라하디락사 Thin Film Transistor and method for fabricating the same
KR100803770B1 (en) 2000-03-07 2008-02-15 에이에스엠 인터내셔널 엔.브이. Gradient （ｇｒａｄｅｄ） thin film
US6890853B2 (en) 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
KR100366621B1 (en) 2000-06-28 2003-01-09 삼성전자 주식회사 Method for manufacturing conductive contact body of semiconductor device
US6632741B1 (en) 2000-07-19 2003-10-14 International Business Machines Corporation Self-trimming method on looped patterns
US6548368B1 (en) 2000-08-23 2003-04-15 Applied Materials, Inc. Method of forming a MIS capacitor
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
JP3696119B2 (en) 2001-04-26 2005-09-14 株式会社日立製作所 Semiconductor device and manufacturing method of semiconductor device
US6709928B1 (en) 2001-07-31 2004-03-23 Cypress Semiconductor Corporation Semiconductor device having silicon-rich layer and method of manufacturing such a device
JP4116283B2 (en) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Hexakis (monohydrocarbylamino) disilane and process for producing the same
US6638879B2 (en) 2001-12-06 2003-10-28 Macronix International Co., Ltd. Method for forming nitride spacer by using atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
KR20030081144A (en) 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 Vertical semiconductor manufacturing apparatus
US6518167B1 (en) 2002-04-16 2003-02-11 Advanced Micro Devices, Inc. Method of forming a metal or metal nitride interface layer between silicon nitride and copper
US7041335B2 (en) 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
KR100469126B1 (en) 2002-06-05 2005-01-29 삼성전자주식회사 Method of forming a thin film with a low hydrogen contents
JP5005170B2 (en) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド Method for forming ultra-high quality silicon-containing compound layer
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US6967159B2 (en) 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
JP4358492B2 (en) 2002-09-25 2009-11-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Method for producing silicon nitride film or silicon oxynitride film by thermal chemical vapor deposition
US7531679B2 (en) 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
KR100496265B1 (en) 2002-11-29 2005-06-17 한국전자통신연구원 Method of forming a thin film in a semiconductor device
CN100567564C (en) 2002-12-20 2009-12-09 应用材料有限公司 Method and apparatus for forming high quality low temperature silicon nitride layer
US7172792B2 (en) 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
JP4329403B2 (en) 2003-05-19 2009-09-09 東京エレクトロン株式会社 Plasma processing equipment
US7125582B2 (en) 2003-07-30 2006-10-24 Intel Corporation Low-temperature silicon nitride deposition
DE10335099B4 (en) 2003-07-31 2006-06-08 Advanced Micro Devices, Inc., Sunnyvale Method for improving the thickness uniformity of silicon nitride layers for a plurality of semiconductor wafers
US6943097B2 (en) 2003-08-19 2005-09-13 International Business Machines Corporation Atomic layer deposition of metallic contacts, gates and diffusion barriers
US20050227017A1 (en) 2003-10-31 2005-10-13 Yoshihide Senzaki Low temperature deposition of silicon nitride
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US7291271B2 (en) 2003-12-09 2007-11-06 Separation Design Group, Llc Meso-frequency traveling wave electro-kinetic continuous adsorption system
JP2005210076A (en) 2003-12-25 2005-08-04 Semiconductor Leading Edge Technologies Inc Method for forming silicon nitride film and method for manufacturing semiconductor device using this method
KR100560654B1 (en) 2004-01-08 2006-03-16 삼성전자주식회사 Nitrogen compound for forming silicon nitride film and method of forming silicon nitride film using same
US20050170104A1 (en) 2004-01-29 2005-08-04 Applied Materials, Inc. Stress-tuned, single-layer silicon nitride film
JP4279176B2 (en) 2004-03-02 2009-06-17 株式会社アルバック Method for forming silicon nitride film
US7550067B2 (en) 2004-06-25 2009-06-23 Guardian Industries Corp. Coated article with ion treated underlayer and corresponding method
US7585396B2 (en) 2004-06-25 2009-09-08 Guardian Industries Corp. Coated article with ion treated overcoat layer and corresponding method
JP4396547B2 (en) 2004-06-28 2010-01-13 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
JP4595702B2 (en) 2004-07-15 2010-12-08 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
JP4179311B2 (en) 2004-07-28 2008-11-12 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
JP4470023B2 (en) 2004-08-20 2010-06-02 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Method for manufacturing silicon nitride film
US7271464B2 (en) 2004-08-24 2007-09-18 Micron Technology, Inc. Liner for shallow trench isolation
US7629270B2 (en) 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7910288B2 (en) * 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US20060084283A1 (en) 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
JP4701691B2 (en) 2004-11-29 2011-06-15 東京エレクトロン株式会社 Etching method
US7429820B2 (en) 2004-12-07 2008-09-30 Motorola, Inc. Field emission display with electron trajectory field shaping
US7482247B1 (en) 2004-12-30 2009-01-27 Novellus Systems, Inc. Conformal nanolaminate dielectric deposition and etch bag gap fill process
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
KR100622609B1 (en) 2005-02-16 2006-09-19 주식회사 하이닉스반도체 Thin Film Formation Method
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
JP4258518B2 (en) 2005-03-09 2009-04-30 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
JP4506677B2 (en) 2005-03-11 2010-07-21 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
JP2006261434A (en) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Method for forming silicon oxide film
JP4607637B2 (en) 2005-03-28 2011-01-05 東京エレクトロン株式会社 Silicon nitride film forming method, silicon nitride film forming apparatus and program
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7560390B2 (en) 2005-06-02 2009-07-14 Micron Technology, Inc. Multiple spacer steps for pitch multiplication
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7700492B2 (en) * 2005-06-22 2010-04-20 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
JP4305427B2 (en) 2005-08-02 2009-07-29 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
US7465669B2 (en) 2005-11-12 2008-12-16 Applied Materials, Inc. Method of fabricating a silicon nitride stack
KR100714305B1 (en) 2005-12-26 2007-05-02 삼성전자주식회사 Formation method of self-aligned double pattern
US7301210B2 (en) * 2006-01-12 2007-11-27 International Business Machines Corporation Method and structure to process thick and thin fins and variable fin to fin spacing
JP4434149B2 (en) 2006-01-16 2010-03-17 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
US7491630B2 (en) * 2006-03-15 2009-02-17 Freescale Semiconductor, Inc. Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility
JP4929811B2 (en) 2006-04-05 2012-05-09 東京エレクトロン株式会社 Plasma processing equipment
JP2007281181A (en) 2006-04-06 2007-10-25 Elpida Memory Inc Manufacturing method of semiconductor device
US7902074B2 (en) * 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
FR2900276B1 (en) 2006-04-25 2008-09-12 St Microelectronics Sa PEALD DEPOSITION OF A SILICON MATERIAL
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US7611980B2 (en) * 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
JP4929932B2 (en) 2006-09-01 2012-05-09 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
WO2008035678A1 (en) 2006-09-19 2008-03-27 Tokyo Electron Limited Plasma cleaning process and plasma cvd method
US7939455B2 (en) 2006-09-29 2011-05-10 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
US20080139003A1 (en) 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
US20080119057A1 (en) 2006-11-20 2008-05-22 Applied Materials,Inc. Method of clustering sequential processing for a gate stack structure
US20080124946A1 (en) 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US20080213479A1 (en) 2007-02-16 2008-09-04 Tokyo Electron Limited SiCN film formation method and apparatus
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
US7488659B2 (en) 2007-03-28 2009-02-10 International Business Machines Corporation Structure and methods for stress concentrating spacer
US20080242032A1 (en) 2007-03-29 2008-10-02 Texas Instruments Incorporated Carbon-Doped Epitaxial SiGe
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
US7807578B2 (en) * 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
JP5151260B2 (en) 2007-06-11 2013-02-27 東京エレクトロン株式会社 Film forming method and film forming apparatus
KR100956210B1 (en) 2007-06-19 2010-05-04 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Plasma Enhanced Cyclic Deposition of Metal Silicon Nitride Thin Films
US7910497B2 (en) 2007-07-30 2011-03-22 Applied Materials, Inc. Method of forming dielectric layers on a substrate and apparatus therefor
JP5098882B2 (en) 2007-08-31 2012-12-12 東京エレクトロン株式会社 Plasma processing equipment
CN101889331A (en) 2007-09-18 2010-11-17 乔治洛德方法研究和开发液化空气有限公司 Method for forming silicon-containing film
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US20090155606A1 (en) 2007-12-13 2009-06-18 Asm Genitech Korea Ltd. Methods of depositing a silicon nitride film
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
JP4935684B2 (en) 2008-01-12 2012-05-23 東京エレクトロン株式会社 Film forming method and film forming apparatus
JP4935687B2 (en) 2008-01-19 2012-05-23 東京エレクトロン株式会社 Film forming method and film forming apparatus
JP5297048B2 (en) 2008-01-28 2013-09-25 三菱重工業株式会社 Plasma processing method and plasma processing apparatus
JP2009260151A (en) 2008-04-18 2009-11-05 Tokyo Electron Ltd Method of forming metal doped layer, film forming apparatus, and storage medium
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US8133797B2 (en) 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
KR20090131821A (en) * 2008-06-19 2009-12-30 삼성전자주식회사 How to form a fine pattern
JP5190307B2 (en) 2008-06-29 2013-04-24 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
US8076208B2 (en) * 2008-07-03 2011-12-13 Micron Technology, Inc. Method for forming transistor with high breakdown voltage using pitch multiplication technique
JP5233562B2 (en) 2008-10-04 2013-07-10 東京エレクトロン株式会社 Film forming method and film forming apparatus
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
JP2010103303A (en) 2008-10-23 2010-05-06 Toshiba Corp Magnetoresistive element and method of manufacturing the same
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
US20100136313A1 (en) 2008-12-01 2010-06-03 Asm Japan K.K. Process for forming high resistivity thin metallic film
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8268727B2 (en) 2009-04-20 2012-09-18 GlobalFoundries, Inc. Methods for fabricating FinFET semiconductor devices using planarized spacers
WO2010151856A2 (en) 2009-06-26 2010-12-29 Cornell University Chemical vapor deposition process for aluminum silicon nitride
KR20110002208A (en) 2009-07-01 2011-01-07 삼성전자주식회사 Method of forming a semiconductor device
JP2011023718A (en) 2009-07-15 2011-02-03 Asm Japan Kk METHOD FOR FORMING STRESS-TUNED DIELECTRIC FILM HAVING Si-N BOND BY PEALD
US8105901B2 (en) * 2009-07-27 2012-01-31 International Business Machines Corporation Method for double pattern density
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8021949B2 (en) * 2009-12-01 2011-09-20 International Business Machines Corporation Method and structure for forming finFETs with multiple doping regions on a same chip
US8354331B2 (en) * 2009-12-01 2013-01-15 International Business Machines Corporation Multiplying pattern density by single sidewall imaging transfer
CN102652186A (en) 2009-12-22 2012-08-29 应用材料公司 PECVD multi-step process with sustained plasma
JP2011192776A (en) 2010-03-15 2011-09-29 Toshiba Corp Method of manufacturing semiconductor device
JP5742185B2 (en) 2010-03-19 2015-07-01 東京エレクトロン株式会社 Film forming apparatus, film forming method, rotation speed optimization method, and storage medium
US20110244142A1 (en) * 2010-03-30 2011-10-06 Applied Materials, Inc. Nitrogen doped amorphous carbon hardmask
TWI498447B (en) 2010-04-01 2015-09-01 Air Liquide Metal nitride containing film deposition using combination of amino-metal and halogenated metal precursors
US8637411B2 (en) * 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US20110256724A1 (en) * 2010-04-15 2011-10-20 Novellus Systems, Inc. Gas and liquid injection methods and apparatus
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9390909B2 (en) * 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US8993460B2 (en) 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
US9892917B2 (en) * 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
KR101147728B1 (en) 2010-08-02 2012-05-25 주식회사 유진테크 Method of cyclic deposition thin film
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
US8138097B1 (en) 2010-09-20 2012-03-20 Kabushiki Kaisha Toshiba Method for processing semiconductor structure and device based on the same
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
WO2012039833A2 (en) 2010-09-24 2012-03-29 Applied Materials, Inc. Low temperature silicon carbide deposition process
US20120213940A1 (en) 2010-10-04 2012-08-23 Applied Materials, Inc. Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma
US20120108079A1 (en) 2010-10-29 2012-05-03 Applied Materials, Inc. Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making
US8679914B2 (en) 2010-11-02 2014-03-25 Micron Technology, Inc. Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material
US8288083B2 (en) 2010-11-05 2012-10-16 Micron Technology, Inc. Methods of forming patterned masks
KR20120062385A (en) * 2010-12-06 2012-06-14 에스케이하이닉스 주식회사 Method of manufacturing semiconductor memory device
KR101225601B1 (en) * 2010-12-16 2013-01-24 한국과학기술원 Fabrication method of large area nanoscale pattern
JP5682290B2 (en) * 2010-12-20 2015-03-11 東京エレクトロン株式会社 Method and apparatus for slimming carbon-containing thin film
JP5689398B2 (en) 2010-12-21 2015-03-25 東京エレクトロン株式会社 Method and apparatus for forming silicon nitride film
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
KR101172272B1 (en) 2010-12-30 2012-08-09 에스케이하이닉스 주식회사 Method for manufacturing semiconductor device with buried bitline
JP2012169408A (en) 2011-02-14 2012-09-06 Taiyo Nippon Sanso Corp Material for mask, method for forming mask, method for forming pattern, and etching protection film
US8883649B2 (en) 2011-03-23 2014-11-11 International Business Machines Corporation Sidewall image transfer process
RU2584841C2 (en) 2011-04-07 2016-05-20 Пикосан Ой Atomic layer deposition with plasma source
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
US8298954B1 (en) * 2011-05-06 2012-10-30 International Business Machines Corporation Sidewall image transfer process employing a cap material layer for a metal nitride layer
TW201319299A (en) 2011-09-13 2013-05-16 Applied Materials Inc Activated silicon precursors for low temperature plasma enhanced deposition
KR101975071B1 (en) 2011-09-23 2019-05-03 노벨러스 시스템즈, 인코포레이티드 Plasma activated conformal dielectric film deposition
US8809169B2 (en) 2011-09-30 2014-08-19 Tokyo Electron Limited Multi-layer pattern for alternate ALD processes
US20130115778A1 (en) 2011-11-04 2013-05-09 Applied Materials, Inc. Dry Etch Processes
US9318431B2 (en) 2011-11-04 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having a MOM capacitor and method of making same
US20130189845A1 (en) * 2012-01-19 2013-07-25 Applied Materials, Inc. Conformal amorphous carbon for spacer and spacer protection applications
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
JP5882776B2 (en) 2012-02-14 2016-03-09 信越化学工業株式会社 Resist underlayer film forming composition and pattern forming method
US8846484B2 (en) 2012-02-15 2014-09-30 Intermolecular, Inc. ReRAM stacks preparation by using single ALD or PVD chamber
WO2013137115A1 (en) 2012-03-15 2013-09-19 東京エレクトロン株式会社 Film forming process and film forming apparatus
JP6125247B2 (en) 2012-03-21 2017-05-10 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program
US8936977B2 (en) 2012-05-29 2015-01-20 Globalfoundries Singapore Pte. Ltd. Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
US8703578B2 (en) 2012-05-29 2014-04-22 Globalfoundries Singapore Pte. Ltd. Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
US9487869B2 (en) * 2012-06-01 2016-11-08 Carnegie Mellon University Pattern transfer with self-assembled nanoparticle assemblies
US8962078B2 (en) 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
CN103515197A (en) 2012-06-26 2014-01-15 中芯国际集成电路制造(上海)有限公司 Self-aligned multi-patterning mask layer and formation method thereof
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US20140023794A1 (en) 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition
US8716136B1 (en) 2012-10-19 2014-05-06 Globalfoundries Inc. Method of forming a semiconductor structure including a wet etch process for removing silicon nitride
US9355839B2 (en) * 2012-10-23 2016-05-31 Lam Research Corporation Sub-saturated atomic layer deposition and conformal film deposition
KR102052936B1 (en) 2012-11-13 2019-12-06 삼성전자 주식회사 Method for fabricating semiconductor device
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9446965B2 (en) 2013-02-19 2016-09-20 Nanotech Industrial Solutions, Inc. Applications for inorganic fullerene-like particles
US8623770B1 (en) * 2013-02-21 2014-01-07 HGST Netherlands B.V. Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US20140273531A1 (en) 2013-03-14 2014-09-18 Asm Ip Holding B.V. Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US20140273530A1 (en) 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride
KR102151611B1 (en) * 2013-03-15 2020-09-03 어플라이드 머티어리얼스, 인코포레이티드 Ultra-conformal carbon film deposition
TW201441408A (en) 2013-03-15 2014-11-01 Applied Materials Inc PEALD of films comprising silicon nitride
US9012336B2 (en) 2013-04-08 2015-04-21 Applied Materials, Inc. Method for conformal treatment of dielectric films using inductively coupled plasma
US9209274B2 (en) * 2013-07-19 2015-12-08 Globalfoundries Inc. Highly conformal extension doping in advanced multi-gate devices
KR102081195B1 (en) 2013-08-28 2020-02-25 삼성전자주식회사 Semiconductor Memory Device And Method Of Fabricating The Same
US20150251917A1 (en) 2013-10-21 2015-09-10 Qualcomm Mems Technologies, Inc. Method of patterning pillars
US9159579B2 (en) * 2013-10-25 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography using multilayer spacer for reduced spacer footing
WO2015069658A1 (en) 2013-11-08 2015-05-14 Tokyo Electron Limited Method for using post-processing methods for accelerating euv lithography
US10084016B2 (en) 2013-11-21 2018-09-25 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
TWI480415B (en) 2013-11-27 2015-04-11 Ind Tech Res Inst Multimode thin film deposition apparatus and thin film deposition method
US9123776B2 (en) 2013-12-04 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned double spacer patterning process
US9614053B2 (en) 2013-12-05 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Spacers with rectangular profile and methods of forming the same
JP6692754B2 (en) 2014-01-13 2020-05-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Self-aligned double patterning by spatial atomic layer deposition
US9806129B2 (en) 2014-02-25 2017-10-31 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
US9660080B2 (en) 2014-02-28 2017-05-23 Stmicroelectronics, Inc. Multi-layer strained channel FinFET
US20150247238A1 (en) * 2014-03-03 2015-09-03 Lam Research Corporation Rf cycle purging to reduce surface roughness in metal oxide and metal nitride films
US9406522B2 (en) 2014-07-24 2016-08-02 Applied Materials, Inc. Single platform, multiple cycle spacer deposition and etch
US20160049307A1 (en) * 2014-08-15 2016-02-18 Yijian Chen Patterning method for IC fabrication using 2-D layout decomposition and synthesis techniques
US9318334B2 (en) 2014-08-27 2016-04-19 United Microelectronics Corp. Method for fabricating semiconductor device
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
US9355837B2 (en) 2014-09-25 2016-05-31 Micron Technology, Inc. Methods of forming and using materials containing silicon and nitrogen
US9875888B2 (en) 2014-10-03 2018-01-23 Applied Materials, Inc. High temperature silicon oxide atomic layer deposition technology
US9791779B2 (en) 2014-10-16 2017-10-17 Tokyo Electron Limited EUV resist etch durability improvement and pattern collapse mitigation
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9449971B2 (en) * 2014-12-01 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming FinFETs
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
EP3035379B1 (en) 2014-12-15 2020-07-01 IMEC vzw Method for blocking a trench portion
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9673059B2 (en) * 2015-02-02 2017-06-06 Tokyo Electron Limited Method for increasing pattern density in self-aligned patterning integration schemes
US9443731B1 (en) * 2015-02-20 2016-09-13 Tokyo Electron Limited Material processing to achieve sub-10nm patterning
US9530646B2 (en) 2015-02-24 2016-12-27 United Microelectronics Corp. Method of forming a semiconductor structure
US9472506B2 (en) * 2015-02-25 2016-10-18 International Business Machines Corporation Registration mark formation during sidewall image transfer process
US9748093B2 (en) 2015-03-18 2017-08-29 Applied Materials, Inc. Pulsed nitride encapsulation
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US9786503B2 (en) * 2015-04-08 2017-10-10 Tokyo Electron Limited Method for increasing pattern density in self-aligned patterning schemes without using hard masks
US9406693B1 (en) 2015-04-20 2016-08-02 Sandisk Technologies Llc Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memory
CN106298519A (en) 2015-05-15 2017-01-04 联华电子股份有限公司 Method for forming semiconductor structure
US9653571B2 (en) 2015-06-15 2017-05-16 International Business Machines Corporation Freestanding spacer having sub-lithographic lateral dimension and method of forming same
US9508560B1 (en) * 2015-06-18 2016-11-29 International Business Machines Corporation SiARC removal with plasma etch and fluorinated wet chemical solution combination
US9530663B1 (en) * 2015-06-23 2016-12-27 Nanya Technology Corp. Method for forming a pattern
US9748110B2 (en) * 2015-09-03 2017-08-29 Tokyo Electron Limited Method and system for selective spacer etch for multi-patterning schemes
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
WO2017053316A1 (en) 2015-09-24 2017-03-30 Tokyo Electron Limited Methods of forming etch masks for sub-resolution substrate patterning
US10141417B2 (en) * 2015-10-20 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, semiconductor device and the method of forming semiconductor device
US10103032B2 (en) 2015-11-20 2018-10-16 Tokyo Electron Limited Methods of forming etch masks for sub-resolution substrate patterning
US9576817B1 (en) * 2015-12-03 2017-02-21 International Business Machines Corporation Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
US9508604B1 (en) * 2016-04-29 2016-11-29 Globalfoundries Inc. Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers
US20170323785A1 (en) 2016-05-06 2017-11-09 Lam Research Corporation Method to deposit conformal and low wet etch rate encapsulation layer using pecvd
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer

Also Published As

Publication number Publication date
KR20180013745A (en) 2018-02-07
KR102510157B1 (en) 2023-03-14
CN107680903A (en) 2018-02-09
US20180033622A1 (en) 2018-02-01
CN113488379A (en) 2021-10-08
TW201821637A (en) 2018-06-16
CN107680903B (en) 2021-06-15
CN113488379B (en) 2025-04-15
KR102273916B1 (en) 2021-07-06
TWI682056B (en) 2020-01-11
US10629435B2 (en) 2020-04-21
JP2018061007A (en) 2018-04-12
KR20210086594A (en) 2021-07-08
JP6895836B2 (en) 2021-06-30

Similar Documents

Publication Publication Date Title
SG10201705999TA (en) Doped ald films for semiconductor patterning applications
EP3276596A3 (en) Semiconductor device
EP3264461A4 (en) Semiconductor device
SG10201707339PA (en) Semiconductor device
EP3235009A4 (en) Selective deposition utilizing sacrificial blocking layers for semiconductor devices
SG11201708564WA (en) Film for manufacturing semiconductor parts
EP3279927A4 (en) Semiconductor device
EP3276661A4 (en) Semiconductor device
EP3076009A3 (en) Semiconductor device
EP3276671A4 (en) Semiconductor device
EP3285289A4 (en) Semiconductor device
EP3276653A4 (en) Semiconductor device
EP3264464A4 (en) Semiconductor memory device
EP3285288A4 (en) Semiconductor device
EP3176823A4 (en) Semiconductor device having esd element
EP3471154B8 (en) Semiconductor device
EP3309827A4 (en) Semiconductor device
EP3255655A4 (en) Semiconductor device
EP3104527A3 (en) Semiconductor device
EP3229281A4 (en) Semiconductor device
EP3252829A4 (en) Organic semiconductor element
EP3331006A4 (en) Semiconductor device
EP3279938A4 (en) Semiconductor device
PT3479448T (en) Semiconductor cutoff device
GB2561730B (en) Semiconductor substrate