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SG10201610556WA - Insulating film, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Insulating film, method for manufacturing semiconductor device, and semiconductor device

Info

Publication number
SG10201610556WA
SG10201610556WA SG10201610556WA SG10201610556WA SG10201610556WA SG 10201610556W A SG10201610556W A SG 10201610556WA SG 10201610556W A SG10201610556W A SG 10201610556WA SG 10201610556W A SG10201610556W A SG 10201610556WA SG 10201610556W A SG10201610556W A SG 10201610556WA
Authority
SG
Singapore
Prior art keywords
semiconductor device
insulating film
manufacturing
manufacturing semiconductor
insulating
Prior art date
Application number
SG10201610556WA
Inventor
Kenichi Okazaki
Toshinari Sasaki
Shuhei Yokoyama
Takashi Hamochi
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of SG10201610556WA publication Critical patent/SG10201610556WA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
SG10201610556WA 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device SG10201610556WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012087432 2012-04-06
JP2012156492 2012-07-12

Publications (1)

Publication Number Publication Date
SG10201610556WA true SG10201610556WA (en) 2017-01-27

Family

ID=49291583

Family Applications (4)

Application Number Title Priority Date Filing Date
SG10201908851X SG10201908851XA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device
SG10201911825SA SG10201911825SA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device
SG10201610556WA SG10201610556WA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device
SG11201504441PA SG11201504441PA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG10201908851X SG10201908851XA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device
SG10201911825SA SG10201911825SA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201504441PA SG11201504441PA (en) 2012-04-06 2013-03-18 Insulating film, method for manufacturing semiconductor device, and semiconductor device

Country Status (8)

Country Link
US (9) US8901556B2 (en)
JP (7) JP6106477B2 (en)
KR (6) KR102125824B1 (en)
CN (3) CN107123682A (en)
DE (4) DE112013007518B3 (en)
SG (4) SG10201908851XA (en)
TW (2) TWI588898B (en)
WO (1) WO2013150927A1 (en)

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