SG10201510137TA - Semiconductor device and method of forming no-flow underfillmaterial around vertical interconnect structure - Google Patents
Semiconductor device and method of forming no-flow underfillmaterial around vertical interconnect structureInfo
- Publication number
- SG10201510137TA SG10201510137TA SG10201510137TA SG10201510137TA SG10201510137TA SG 10201510137T A SG10201510137T A SG 10201510137TA SG 10201510137T A SG10201510137T A SG 10201510137TA SG 10201510137T A SG10201510137T A SG 10201510137TA SG 10201510137T A SG10201510137T A SG 10201510137TA
- Authority
- SG
- Singapore
- Prior art keywords
- underfillmaterial
- forming
- flow
- semiconductor device
- interconnect structure
- Prior art date
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0494—4th Group
- H01L2924/04941—TiN
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/410,312 US8163597B2 (en) | 2009-03-24 | 2009-03-24 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201510137TA true SG10201510137TA (en) | 2016-01-28 |
Family
ID=42783077
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201510137TA SG10201510137TA (en) | 2009-03-24 | 2010-02-25 | Semiconductor device and method of forming no-flow underfillmaterial around vertical interconnect structure |
| SG2012047403A SG182956A1 (en) | 2009-03-24 | 2010-02-25 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure |
| SG201001299-5A SG165242A1 (en) | 2009-03-24 | 2010-02-25 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012047403A SG182956A1 (en) | 2009-03-24 | 2010-02-25 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure |
| SG201001299-5A SG165242A1 (en) | 2009-03-24 | 2010-02-25 | Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8163597B2 (en) |
| SG (3) | SG10201510137TA (en) |
| TW (1) | TWI515810B (en) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9024455B2 (en) * | 2010-05-26 | 2015-05-05 | Hitachi Chemical Company, Ltd. | Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device |
| US8884422B2 (en) * | 2009-12-31 | 2014-11-11 | Stmicroelectronics Pte Ltd. | Flip-chip fan-out wafer level package for package-on-package applications, and method of manufacture |
| US8288209B1 (en) | 2011-06-03 | 2012-10-16 | Stats Chippac, Ltd. | Semiconductor device and method of using leadframe bodies to form openings through encapsulant for vertical interconnect of semiconductor die |
| KR101434003B1 (en) | 2011-07-07 | 2014-08-27 | 삼성전기주식회사 | Semiconductor package and manufacturing method thereof |
| US9013037B2 (en) | 2011-09-14 | 2015-04-21 | Stmicroelectronics Pte Ltd. | Semiconductor package with improved pillar bump process and structure |
| US8916481B2 (en) | 2011-11-02 | 2014-12-23 | Stmicroelectronics Pte Ltd. | Embedded wafer level package for 3D and package-on-package applications, and method of manufacture |
| US8552556B1 (en) | 2011-11-22 | 2013-10-08 | Amkor Technology, Inc. | Wafer level fan out package |
| KR20130089473A (en) * | 2012-02-02 | 2013-08-12 | 삼성전자주식회사 | Semiconductor package |
| US9418947B2 (en) * | 2012-02-27 | 2016-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming connectors with a molding compound for package on package |
| US9082780B2 (en) * | 2012-03-23 | 2015-07-14 | Stats Chippac, Ltd. | Semiconductor device and method of forming a robust fan-out package including vertical interconnects and mechanical support layer |
| DE102012109922B4 (en) | 2012-04-16 | 2020-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package-on-package structure and method of making the same |
| US9219030B2 (en) * | 2012-04-16 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structures and methods for forming the same |
| US10622310B2 (en) | 2012-09-26 | 2020-04-14 | Ping-Jung Yang | Method for fabricating glass substrate package |
| US8928134B2 (en) | 2012-12-28 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package bonding structure and method for forming the same |
| US8896094B2 (en) * | 2013-01-23 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for inductors and transformers in packages |
| US9449945B2 (en) | 2013-03-08 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Filter and capacitor using redistribution layer and micro bump layer |
| KR102065008B1 (en) | 2013-09-27 | 2020-01-10 | 삼성전자주식회사 | Stack type semiconductor package |
| US9922844B2 (en) * | 2014-03-12 | 2018-03-20 | Mediatek Inc. | Semiconductor package and method for fabricating base for semiconductor package |
| US20150311132A1 (en) * | 2014-04-28 | 2015-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scribe line structure and method of forming same |
| US10032662B2 (en) * | 2014-10-08 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company | Packaged semiconductor devices and packaging methods thereof |
| KR101647559B1 (en) | 2014-11-07 | 2016-08-10 | 앰코 테크놀로지 코리아 주식회사 | Method of manufactuing semiconductor package and semiconductor package |
| US10229865B2 (en) * | 2016-06-23 | 2019-03-12 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
| TW202537391A (en) | 2016-12-14 | 2025-09-16 | 成真股份有限公司 | Logic drive based on standard commodity fpga ic chips |
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| US10623000B2 (en) | 2018-02-14 | 2020-04-14 | iCometrue Company Ltd. | Logic drive using standard commodity programmable logic IC chips |
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| US10515936B1 (en) * | 2018-06-25 | 2019-12-24 | Powertech Technology Inc. | Package structure and manufacturing method thereof |
| KR102555721B1 (en) | 2018-08-20 | 2023-07-17 | 삼성전자주식회사 | method for bonding flip chip |
| US11309334B2 (en) | 2018-09-11 | 2022-04-19 | iCometrue Company Ltd. | Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells |
| US10937762B2 (en) | 2018-10-04 | 2021-03-02 | iCometrue Company Ltd. | Logic drive based on multichip package using interconnection bridge |
| US11616046B2 (en) | 2018-11-02 | 2023-03-28 | iCometrue Company Ltd. | Logic drive based on chip scale package comprising standardized commodity programmable logic IC chip and memory IC chip |
| US11211334B2 (en) | 2018-11-18 | 2021-12-28 | iCometrue Company Ltd. | Logic drive based on chip scale package comprising standardized commodity programmable logic IC chip and memory IC chip |
| US10985154B2 (en) | 2019-07-02 | 2021-04-20 | iCometrue Company Ltd. | Logic drive based on multichip package comprising standard commodity FPGA IC chip with cryptography circuits |
| US11227838B2 (en) | 2019-07-02 | 2022-01-18 | iCometrue Company Ltd. | Logic drive based on multichip package comprising standard commodity FPGA IC chip with cooperating or supporting circuits |
| US11887930B2 (en) | 2019-08-05 | 2024-01-30 | iCometrue Company Ltd. | Vertical interconnect elevator based on through silicon vias |
| US11637056B2 (en) | 2019-09-20 | 2023-04-25 | iCometrue Company Ltd. | 3D chip package based on through-silicon-via interconnection elevator |
| US11600526B2 (en) | 2020-01-22 | 2023-03-07 | iCometrue Company Ltd. | Chip package based on through-silicon-via connector and silicon interconnection bridge |
| US12176278B2 (en) | 2021-05-30 | 2024-12-24 | iCometrue Company Ltd. | 3D chip package based on vertical-through-via connector |
| US12268012B2 (en) | 2021-09-24 | 2025-04-01 | iCometrue Company Ltd. | Multi-output look-up table (LUT) for use in coarse-grained field-programmable-gate-array (FPGA) integrated-circuit (IC) chip |
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Family Cites Families (15)
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| US5250843A (en) | 1991-03-27 | 1993-10-05 | Integrated System Assemblies Corp. | Multichip integrated circuit modules |
| US5253498A (en) * | 1992-08-24 | 1993-10-19 | Roper Whitney Company | Bending brake with multiple selectively operative clamp jaws |
| US5353498A (en) | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
| US5841193A (en) | 1996-05-20 | 1998-11-24 | Epic Technologies, Inc. | Single chip modules, repairable multichip modules, and methods of fabrication thereof |
| JP2001339011A (en) * | 2000-03-24 | 2001-12-07 | Shinko Electric Ind Co Ltd | Semiconductor device and method of manufacturing the same |
| JP2002158312A (en) * | 2000-11-17 | 2002-05-31 | Oki Electric Ind Co Ltd | Semiconductor package for three-dimensional mounting, manufacturing method thereof, and semiconductor device |
| US7034386B2 (en) * | 2001-03-26 | 2006-04-25 | Nec Corporation | Thin planar semiconductor device having electrodes on both surfaces and method of fabricating same |
| US6794761B2 (en) | 2001-04-26 | 2004-09-21 | Intel Corporation | No-flow underfill material |
| US6933221B1 (en) | 2002-06-24 | 2005-08-23 | Micron Technology, Inc. | Method for underfilling semiconductor components using no flow underfill |
| US7388294B2 (en) * | 2003-01-27 | 2008-06-17 | Micron Technology, Inc. | Semiconductor components having stacked dice |
| JP4520355B2 (en) * | 2005-04-19 | 2010-08-04 | パナソニック株式会社 | Semiconductor module |
| US8072059B2 (en) | 2006-04-19 | 2011-12-06 | Stats Chippac, Ltd. | Semiconductor device and method of forming UBM fixed relative to interconnect structure for alignment of semiconductor die |
| US7868445B2 (en) | 2007-06-25 | 2011-01-11 | Epic Technologies, Inc. | Integrated structures and methods of fabrication thereof with fan-out metallization on a chips-first chip layer |
| KR100909322B1 (en) * | 2007-07-02 | 2009-07-24 | 주식회사 네패스 | Ultra-thin semiconductor package and manufacturing method thereof |
| US7858441B2 (en) * | 2008-12-08 | 2010-12-28 | Stats Chippac, Ltd. | Semiconductor package with semiconductor core structure and method of forming same |
-
2009
- 2009-03-24 US US12/410,312 patent/US8163597B2/en active Active
-
2010
- 2010-02-25 SG SG10201510137TA patent/SG10201510137TA/en unknown
- 2010-02-25 SG SG2012047403A patent/SG182956A1/en unknown
- 2010-02-25 SG SG201001299-5A patent/SG165242A1/en unknown
- 2010-03-10 TW TW099106849A patent/TWI515810B/en active
-
2012
- 2012-03-19 US US13/423,782 patent/US9524955B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| SG182956A1 (en) | 2012-08-30 |
| TW201113963A (en) | 2011-04-16 |
| US9524955B2 (en) | 2016-12-20 |
| US20100244216A1 (en) | 2010-09-30 |
| TWI515810B (en) | 2016-01-01 |
| SG165242A1 (en) | 2010-10-28 |
| US8163597B2 (en) | 2012-04-24 |
| US20120175771A1 (en) | 2012-07-12 |
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