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SG10201504420RA - Method For Etching Insulation Film - Google Patents

Method For Etching Insulation Film

Info

Publication number
SG10201504420RA
SG10201504420RA SG10201504420RA SG10201504420RA SG10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA
Authority
SG
Singapore
Prior art keywords
insulation film
etching insulation
etching
film
insulation
Prior art date
Application number
SG10201504420RA
Inventor
Akira Takahashi
Kei Nakayama
Yoshiki Igarashi
Shin Hirotsu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201504420RA publication Critical patent/SG10201504420RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • H10P14/69215
    • H10P50/242
    • H10P50/244
    • H10P50/268
    • H10P50/283
    • H10P50/73
    • H10P72/0421
    • H10W20/081
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
SG10201504420RA 2014-06-19 2015-06-05 Method For Etching Insulation Film SG10201504420RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014126520A JP6327970B2 (en) 2014-06-19 2014-06-19 Method for etching an insulating film

Publications (1)

Publication Number Publication Date
SG10201504420RA true SG10201504420RA (en) 2016-01-28

Family

ID=54870293

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201504420RA SG10201504420RA (en) 2014-06-19 2015-06-05 Method For Etching Insulation Film

Country Status (6)

Country Link
US (1) US9312105B2 (en)
JP (1) JP6327970B2 (en)
KR (1) KR101799149B1 (en)
CN (1) CN105304484B (en)
SG (1) SG10201504420RA (en)
TW (1) TWI632606B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315809B2 (en) 2014-08-28 2018-04-25 東京エレクトロン株式会社 Etching method
JP6410592B2 (en) * 2014-12-18 2018-10-24 東京エレクトロン株式会社 Plasma etching method
JP6568822B2 (en) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 Etching method
JP6811202B2 (en) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 Etching method and plasma processing equipment
JP6846387B2 (en) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 Plasma processing method and plasma processing equipment
FR3091410B1 (en) * 2018-12-26 2021-01-15 St Microelectronics Crolles 2 Sas Engraving process
WO2021090516A1 (en) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 Etching method
JP7382848B2 (en) * 2020-02-20 2023-11-17 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP7433095B2 (en) * 2020-03-18 2024-02-19 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
KR102897387B1 (en) * 2023-11-30 2025-12-05 앱솔릭스 인코포레이티드 Manufacturing method for packaging substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559429B2 (en) * 1997-07-02 2004-09-02 松下電器産業株式会社 Plasma processing method
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
KR100317915B1 (en) 1999-03-22 2001-12-22 윤종용 Apparatus for plasma etching
CN100371491C (en) * 1999-08-17 2008-02-27 东京电子株式会社 Pulse plasma treatment method and equipment thereof
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
EP2479783B1 (en) * 2004-06-21 2018-12-12 Tokyo Electron Limited Plasma processing apparatus and method
JP5192209B2 (en) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 Plasma etching apparatus, plasma etching method, and computer-readable storage medium
JP5390846B2 (en) * 2008-12-09 2014-01-15 東京エレクトロン株式会社 Plasma etching apparatus and plasma cleaning method
JP5221403B2 (en) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 Plasma etching method, plasma etching apparatus and storage medium
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
JP2012142495A (en) 2011-01-05 2012-07-26 Ulvac Japan Ltd Plasma etching method and plasma etching apparatus
JP5804978B2 (en) * 2011-03-03 2015-11-04 東京エレクトロン株式会社 Plasma etching method and computer recording medium
JP5977509B2 (en) 2011-12-09 2016-08-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus

Also Published As

Publication number Publication date
CN105304484A (en) 2016-02-03
KR20150146394A (en) 2015-12-31
JP6327970B2 (en) 2018-05-23
TWI632606B (en) 2018-08-11
TW201611117A (en) 2016-03-16
US20150371830A1 (en) 2015-12-24
US9312105B2 (en) 2016-04-12
CN105304484B (en) 2018-04-10
JP2016004983A (en) 2016-01-12
KR101799149B1 (en) 2017-11-17

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