SG10201504420RA - Method For Etching Insulation Film - Google Patents
Method For Etching Insulation FilmInfo
- Publication number
- SG10201504420RA SG10201504420RA SG10201504420RA SG10201504420RA SG10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA SG 10201504420R A SG10201504420R A SG 10201504420RA
- Authority
- SG
- Singapore
- Prior art keywords
- insulation film
- etching insulation
- etching
- film
- insulation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H10P14/69215—
-
- H10P50/242—
-
- H10P50/244—
-
- H10P50/268—
-
- H10P50/283—
-
- H10P50/73—
-
- H10P72/0421—
-
- H10W20/081—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014126520A JP6327970B2 (en) | 2014-06-19 | 2014-06-19 | Method for etching an insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201504420RA true SG10201504420RA (en) | 2016-01-28 |
Family
ID=54870293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201504420RA SG10201504420RA (en) | 2014-06-19 | 2015-06-05 | Method For Etching Insulation Film |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9312105B2 (en) |
| JP (1) | JP6327970B2 (en) |
| KR (1) | KR101799149B1 (en) |
| CN (1) | CN105304484B (en) |
| SG (1) | SG10201504420RA (en) |
| TW (1) | TWI632606B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6315809B2 (en) | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | Etching method |
| JP6410592B2 (en) * | 2014-12-18 | 2018-10-24 | 東京エレクトロン株式会社 | Plasma etching method |
| JP6568822B2 (en) * | 2016-05-16 | 2019-08-28 | 東京エレクトロン株式会社 | Etching method |
| JP6811202B2 (en) * | 2018-04-17 | 2021-01-13 | 東京エレクトロン株式会社 | Etching method and plasma processing equipment |
| JP6846387B2 (en) * | 2018-06-22 | 2021-03-24 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing equipment |
| FR3091410B1 (en) * | 2018-12-26 | 2021-01-15 | St Microelectronics Crolles 2 Sas | Engraving process |
| WO2021090516A1 (en) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | Etching method |
| JP7382848B2 (en) * | 2020-02-20 | 2023-11-17 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| JP7433095B2 (en) * | 2020-03-18 | 2024-02-19 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| KR102897387B1 (en) * | 2023-11-30 | 2025-12-05 | 앱솔릭스 인코포레이티드 | Manufacturing method for packaging substrate |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3559429B2 (en) * | 1997-07-02 | 2004-09-02 | 松下電器産業株式会社 | Plasma processing method |
| US6589437B1 (en) * | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
| KR100317915B1 (en) | 1999-03-22 | 2001-12-22 | 윤종용 | Apparatus for plasma etching |
| CN100371491C (en) * | 1999-08-17 | 2008-02-27 | 东京电子株式会社 | Pulse plasma treatment method and equipment thereof |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| EP2479783B1 (en) * | 2004-06-21 | 2018-12-12 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP5192209B2 (en) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | Plasma etching apparatus, plasma etching method, and computer-readable storage medium |
| JP5390846B2 (en) * | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | Plasma etching apparatus and plasma cleaning method |
| JP5221403B2 (en) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus and storage medium |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| JP2012142495A (en) | 2011-01-05 | 2012-07-26 | Ulvac Japan Ltd | Plasma etching method and plasma etching apparatus |
| JP5804978B2 (en) * | 2011-03-03 | 2015-11-04 | 東京エレクトロン株式会社 | Plasma etching method and computer recording medium |
| JP5977509B2 (en) | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
-
2014
- 2014-06-19 JP JP2014126520A patent/JP6327970B2/en active Active
-
2015
- 2015-06-04 KR KR1020150078977A patent/KR101799149B1/en active Active
- 2015-06-04 US US14/730,394 patent/US9312105B2/en active Active
- 2015-06-05 TW TW104118241A patent/TWI632606B/en active
- 2015-06-05 CN CN201510303252.6A patent/CN105304484B/en active Active
- 2015-06-05 SG SG10201504420RA patent/SG10201504420RA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN105304484A (en) | 2016-02-03 |
| KR20150146394A (en) | 2015-12-31 |
| JP6327970B2 (en) | 2018-05-23 |
| TWI632606B (en) | 2018-08-11 |
| TW201611117A (en) | 2016-03-16 |
| US20150371830A1 (en) | 2015-12-24 |
| US9312105B2 (en) | 2016-04-12 |
| CN105304484B (en) | 2018-04-10 |
| JP2016004983A (en) | 2016-01-12 |
| KR101799149B1 (en) | 2017-11-17 |
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