SG10201503073QA - Hole doping of graphene - Google Patents
Hole doping of grapheneInfo
- Publication number
- SG10201503073QA SG10201503073QA SG10201503073QA SG10201503073QA SG10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA SG 10201503073Q A SG10201503073Q A SG 10201503073QA
- Authority
- SG
- Singapore
- Prior art keywords
- graphene
- hole doping
- doping
- hole
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
- H10D62/882—Graphene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34388610P | 2010-05-05 | 2010-05-05 | |
| US40497510P | 2010-10-12 | 2010-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201503073QA true SG10201503073QA (en) | 2015-06-29 |
Family
ID=44903910
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012077046A SG184904A1 (en) | 2010-05-05 | 2011-05-05 | Hole doping of graphene |
| SG10201503073QA SG10201503073QA (en) | 2010-05-05 | 2011-05-05 | Hole doping of graphene |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012077046A SG184904A1 (en) | 2010-05-05 | 2011-05-05 | Hole doping of graphene |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9269773B2 (en) |
| EP (1) | EP2567403A4 (en) |
| JP (1) | JP5814348B2 (en) |
| KR (1) | KR20130098884A (en) |
| CN (1) | CN103026490B (en) |
| BR (1) | BR112012028292A2 (en) |
| RU (1) | RU2565336C2 (en) |
| SG (2) | SG184904A1 (en) |
| WO (1) | WO2011139236A1 (en) |
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| JP5545735B2 (en) * | 2010-07-20 | 2014-07-09 | 日本電信電話株式会社 | Magnetoelectric effect element |
| KR20120134220A (en) * | 2011-06-01 | 2012-12-12 | 삼성전자주식회사 | Ferromagnetic graphene and spin valve device adopting the same |
| JP5737405B2 (en) * | 2011-07-29 | 2015-06-17 | 富士通株式会社 | Method for producing graphene nanomesh and method for producing semiconductor device |
| US9202945B2 (en) * | 2011-12-23 | 2015-12-01 | Nokia Technologies Oy | Graphene-based MIM diode and associated methods |
| JP5689828B2 (en) * | 2012-02-01 | 2015-03-25 | 日本電信電話株式会社 | Manufacturing method of graphene pn junction |
| KR101264357B1 (en) | 2012-03-30 | 2013-05-14 | 한국전기연구원 | Transparent conductive graphene films modified by graphene oxide nanosheets |
| KR101349357B1 (en) * | 2012-04-03 | 2014-01-16 | 한국전기연구원 | Transparent conductive graphene films modified by metal oxides |
| US9413075B2 (en) | 2012-06-14 | 2016-08-09 | Globalfoundries Inc. | Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies |
| US9174413B2 (en) | 2012-06-14 | 2015-11-03 | International Business Machines Corporation | Graphene based structures and methods for shielding electromagnetic radiation |
| ES2395949B1 (en) * | 2012-09-18 | 2013-12-26 | Fundació Institut De Ciències Fotòniques | ELECTRONIC PLATFORM THAT INCLUDES A CRYSTAL OF TYPE ABO3 AND GRAPHENE, METHOD FOR MANUFACTURING AND CHIP THAT INCLUDES THE SAME |
| US20140084253A1 (en) | 2012-09-25 | 2014-03-27 | International Business Machines Corporation | Transparent conductive electrode stack containing carbon-containing material |
| US8906787B2 (en) * | 2012-10-05 | 2014-12-09 | Cornell University | Thin film compositions and methods |
| GB201302556D0 (en) * | 2013-02-14 | 2013-03-27 | Univ Manchester | Thermoelectric materials and devices |
| KR101541529B1 (en) * | 2013-02-26 | 2015-08-05 | 서울대학교산학협력단 | Graphene device and manufacturing mehtod of thereof |
| WO2014146017A1 (en) * | 2013-03-15 | 2014-09-18 | University Of Utah Research Foundation | Graphene-based superconductors |
| IL225976A (en) | 2013-04-25 | 2015-02-26 | Rafi Kalish | Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof |
| CN103280398B (en) * | 2013-05-30 | 2016-02-03 | 中国电子科技集团公司第十三研究所 | A kind of method preparing horizontal graphene PN junction |
| CN103515535A (en) * | 2013-10-10 | 2014-01-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparing method of phase-changing memory contact electrode and phase-changing memory contact electrode |
| WO2015102746A2 (en) * | 2013-11-04 | 2015-07-09 | Massachusetts Institute Of Technology | Electronics including graphene-based hybrid structures |
| WO2015126139A1 (en) * | 2014-02-19 | 2015-08-27 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
| JP6178267B2 (en) * | 2014-03-13 | 2017-08-09 | 株式会社東芝 | wiring |
| KR102255301B1 (en) | 2014-05-19 | 2021-05-24 | 삼성전자주식회사 | Optoelectronic device including ferroelectric material |
| JP6388953B2 (en) * | 2014-09-16 | 2018-09-12 | 国立研究開発法人産業技術総合研究所 | Organic light emitting device and anode material |
| KR102374118B1 (en) | 2014-10-31 | 2022-03-14 | 삼성전자주식회사 | Graphene layer, method of forming the same, device including graphene layer and method of manufacturing the device |
| KR102412965B1 (en) * | 2014-12-30 | 2022-06-24 | 삼성전자주식회사 | Electronic device having two dimensional material layer and method of manufacturing the electronic device using inkjet printing |
| JP6073530B2 (en) * | 2015-01-28 | 2017-02-01 | 三菱電機株式会社 | Electromagnetic wave detector and electromagnetic wave detector array |
| CN106549077B (en) * | 2015-09-18 | 2018-03-02 | 中国科学院物理研究所 | A kind of photoelectric diode device and a kind of method for producing rectifying effect |
| CN105355651B (en) * | 2015-10-12 | 2018-02-16 | 河南师范大学 | A kind of negative differential resistance atomic scale nano-device based on boron nitrogen-atoms chain |
| JP6113372B1 (en) | 2016-02-24 | 2017-04-12 | 三菱電機株式会社 | Electromagnetic wave detector |
| US10784394B2 (en) * | 2016-07-12 | 2020-09-22 | Mitsubishi Electric Corporation | Electromagnetic wave detector and electromagnetic wave detector array |
| JP6799247B2 (en) * | 2016-08-09 | 2020-12-16 | 富士通株式会社 | Semiconductor device |
| JP6858840B2 (en) * | 2017-03-22 | 2021-04-14 | 三菱電機株式会社 | Electromagnetic wave detector, electromagnetic wave detector array and electromagnetic wave detection method |
| CN107316804B (en) * | 2017-07-07 | 2019-07-23 | 西安交通大学 | A kind of preparation method of metal atom-doped large-area regular epitaxial graphene |
| JP6957310B2 (en) * | 2017-10-24 | 2021-11-02 | 東京エレクトロン株式会社 | Semiconductor devices and CMOS transistors |
| GB2568110B (en) | 2017-11-07 | 2019-12-04 | Emberion Oy | Photosensitive field-effect transistor |
| JP6985596B2 (en) * | 2017-11-30 | 2021-12-22 | 富士通株式会社 | Electronic devices, manufacturing methods and electronic devices for electronic devices |
| CN108198746B (en) * | 2017-12-29 | 2020-06-19 | 重庆墨希科技有限公司 | CVD graphene composite doping structure and preparation method thereof |
| US20200108584A1 (en) * | 2018-10-04 | 2020-04-09 | Hanwha Aerospace Co.,Ltd | Graphene-based laminate, method of preparing the same, and transparent electrode and electronic device each including the graphene-based laminate |
| CN109573995A (en) * | 2018-11-15 | 2019-04-05 | 南京邮电大学 | A kind of method that basic anhydride are grapheme modified |
| CN109613030A (en) * | 2018-12-21 | 2019-04-12 | 四川聚创石墨烯科技有限公司 | A method of determining whether carbon material is doping graphene oxide |
| CN109801990A (en) * | 2018-12-29 | 2019-05-24 | 山东大学 | A method of photodetector is made using SiC pyrolytic graphite alkene |
| CN110426429A (en) * | 2019-08-01 | 2019-11-08 | 电子科技大学 | A kind of chemical sensor array based on two-dimentional glass graphite alkene |
| CN114622178B (en) * | 2022-03-15 | 2024-08-06 | 山西师范大学 | Method for regulating and controlling optical and electrical properties of metal oxide and application thereof |
| US20250340995A1 (en) | 2022-06-08 | 2025-11-06 | Paragraf Limited | A thermally stable graphene-containing laminate |
| US20240047203A1 (en) * | 2022-08-04 | 2024-02-08 | Future Semiconductor Business, Inc | Monolithic remote epitaxy of compound semi conductors and 2d materials |
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| JP2000516708A (en) | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | Macroscopically operable nanoscale devices fabricated from nanotube assemblies |
| RU2228900C1 (en) * | 2003-02-11 | 2004-05-20 | Физико-технический институт им. А.Ф. Иоффе РАН | Method for producing carbon nanostructures |
| US8044472B2 (en) | 2003-03-25 | 2011-10-25 | Kulite Semiconductor Products, Inc. | Nanotube and graphene semiconductor structures with varying electrical properties |
| US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
| BRPI0402338B1 (en) | 2004-06-16 | 2015-01-06 | Universidad De La República | PROCESS FOR PREPARING MAGNETIC GRAPHIC MATERIALS AND PREPARED MATERIALS |
| US8378329B2 (en) | 2007-03-02 | 2013-02-19 | Brookhaven Science Associates, Llc | Nanodevices for spintronics and methods of using same |
| WO2008108383A1 (en) * | 2007-03-02 | 2008-09-12 | Nec Corporation | Semiconductor device employing graphene and method for fabricating the same |
| US7732859B2 (en) | 2007-07-16 | 2010-06-08 | International Business Machines Corporation | Graphene-based transistor |
| KR101344493B1 (en) | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | Single crystalline graphene sheet and process for preparing the same |
| WO2009143604A1 (en) * | 2008-05-30 | 2009-12-03 | University Of Alberta | Molecular signature for fibrosis and atrophy |
| EP2311078A4 (en) * | 2008-06-26 | 2012-11-21 | Carben Semicon Ltd | INTEGRATED PATTERNED CIRCUIT AND METHOD FOR PRODUCING THE SAME |
| US7952088B2 (en) | 2008-07-11 | 2011-05-31 | International Business Machines Corporation | Semiconducting device having graphene channel |
| WO2010008399A1 (en) * | 2008-07-15 | 2010-01-21 | Curtin Lawrence F | Dye doped graphite graphene solar cell on aluminum |
| US8257867B2 (en) * | 2008-07-28 | 2012-09-04 | Battelle Memorial Institute | Nanocomposite of graphene and metal oxide materials |
| US8698226B2 (en) * | 2008-07-31 | 2014-04-15 | University Of Connecticut | Semiconductor devices, methods of manufacture thereof and articles comprising the same |
| US9346680B2 (en) | 2008-09-09 | 2016-05-24 | Battelle Memorial Institute | Mesoporous metal oxide graphene nanocomposite materials |
| JP5453045B2 (en) * | 2008-11-26 | 2014-03-26 | 株式会社日立製作所 | Substrate on which graphene layer is grown and electronic / optical integrated circuit device using the same |
| US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
| US8053782B2 (en) * | 2009-08-24 | 2011-11-08 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
| US20110070495A1 (en) * | 2009-09-23 | 2011-03-24 | Alliance For Sustainable Energy, Llc | Method of fabricating electrodes including high-capacity, binder-free anodes for lithium-ion batteries |
| US9640334B2 (en) * | 2010-01-25 | 2017-05-02 | Nanotek Instruments, Inc. | Flexible asymmetric electrochemical cells using nano graphene platelet as an electrode material |
| US8278643B2 (en) * | 2010-02-02 | 2012-10-02 | Searete Llc | Doped graphene electronic materials |
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| WO2012051597A2 (en) * | 2010-10-15 | 2012-04-19 | The Regents Of The University Of California | Organometallic chemistry of extended periodic ii-electron systems |
| US8878120B2 (en) * | 2010-12-13 | 2014-11-04 | The Trustees Of The Stevens Institute Of Technology | Active bandgap tuning of graphene for tunable photodetection applications |
| US8758947B2 (en) * | 2011-01-11 | 2014-06-24 | Battelle Memorial Institute | Graphene-based battery electrodes having continuous flow paths |
| US20130332120A1 (en) * | 2012-06-06 | 2013-12-12 | University Of Southern California | System and method for aggregating reservoir connectivities |
-
2011
- 2011-05-05 WO PCT/SG2011/000177 patent/WO2011139236A1/en not_active Ceased
- 2011-05-05 CN CN201180022146.0A patent/CN103026490B/en not_active Expired - Fee Related
- 2011-05-05 KR KR1020127031860A patent/KR20130098884A/en not_active Withdrawn
- 2011-05-05 RU RU2012149561/28A patent/RU2565336C2/en not_active IP Right Cessation
- 2011-05-05 SG SG2012077046A patent/SG184904A1/en unknown
- 2011-05-05 US US13/696,189 patent/US9269773B2/en active Active
- 2011-05-05 SG SG10201503073QA patent/SG10201503073QA/en unknown
- 2011-05-05 BR BR112012028292A patent/BR112012028292A2/en not_active IP Right Cessation
- 2011-05-05 JP JP2013509032A patent/JP5814348B2/en not_active Expired - Fee Related
- 2011-05-05 EP EP11777667.4A patent/EP2567403A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20130048952A1 (en) | 2013-02-28 |
| SG184904A1 (en) | 2012-11-29 |
| EP2567403A4 (en) | 2014-11-19 |
| WO2011139236A1 (en) | 2011-11-10 |
| JP5814348B2 (en) | 2015-11-17 |
| CN103026490A (en) | 2013-04-03 |
| CN103026490B (en) | 2016-06-22 |
| EP2567403A1 (en) | 2013-03-13 |
| RU2565336C2 (en) | 2015-10-20 |
| JP2013537700A (en) | 2013-10-03 |
| KR20130098884A (en) | 2013-09-05 |
| BR112012028292A2 (en) | 2016-11-01 |
| RU2012149561A (en) | 2014-06-10 |
| US9269773B2 (en) | 2016-02-23 |
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