SG10201500353WA - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG10201500353WA SG10201500353WA SG10201500353WA SG10201500353WA SG10201500353WA SG 10201500353W A SG10201500353W A SG 10201500353WA SG 10201500353W A SG10201500353W A SG 10201500353WA SG 10201500353W A SG10201500353W A SG 10201500353WA SG 10201500353W A SG10201500353W A SG 10201500353WA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17724—Structural details of logic blocks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17736—Structural details of routing resources
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17748—Structural details of configuration resources
- H03K19/1776—Structural details of configuration resources for memories
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17748—Structural details of configuration resources
- H03K19/17772—Structural details of configuration resources for powering on or off
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/1778—Structural details for adapting physical parameters
- H03K19/17784—Structural details for adapting physical parameters for supply voltage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- Computer Networks & Wireless Communication (AREA)
- Thin Film Transistor (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
- Electrodes Of Semiconductors (AREA)
- Control Of El Displays (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010009569 | 2010-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201500353WA true SG10201500353WA (en) | 2015-03-30 |
Family
ID=44277178
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201500353WA SG10201500353WA (en) | 2010-01-20 | 2010-12-14 | Semiconductor device |
| SG2012046207A SG182272A1 (en) | 2010-01-20 | 2010-12-14 | Semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012046207A SG182272A1 (en) | 2010-01-20 | 2010-12-14 | Semiconductor device |
Country Status (10)
| Country | Link |
|---|---|
| US (4) | US8547753B2 (en) |
| EP (1) | EP2526622B1 (en) |
| JP (7) | JP5660902B2 (en) |
| KR (5) | KR101745749B1 (en) |
| CN (1) | CN102714496B (en) |
| IN (1) | IN2012DN05920A (en) |
| MY (2) | MY160598A (en) |
| SG (2) | SG10201500353WA (en) |
| TW (5) | TWI550775B (en) |
| WO (1) | WO2011089808A1 (en) |
Families Citing this family (123)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101894821B1 (en) | 2009-12-11 | 2018-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| EP2526622B1 (en) | 2010-01-20 | 2015-09-23 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| KR101805378B1 (en) | 2010-01-24 | 2017-12-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and manufacturing method thereof |
| WO2011096277A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| CN102725842B (en) | 2010-02-05 | 2014-12-03 | 株式会社半导体能源研究所 | Semiconductor device |
| WO2011096264A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving semiconductor device |
| CN102742001B (en) | 2010-02-05 | 2017-03-22 | 株式会社半导体能源研究所 | Semiconductor device |
| US8416622B2 (en) | 2010-05-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor |
| JP5771079B2 (en) * | 2010-07-01 | 2015-08-26 | 株式会社半導体エネルギー研究所 | Imaging device |
| TWI524347B (en) | 2010-08-06 | 2016-03-01 | 半導體能源研究所股份有限公司 | Semiconductor device and driving method thereof |
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| JP5727892B2 (en) | 2010-08-26 | 2015-06-03 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| TWI543158B (en) | 2010-10-25 | 2016-07-21 | 半導體能源研究所股份有限公司 | Semiconductor memory device and driving method thereof |
| US9048142B2 (en) | 2010-12-28 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101899880B1 (en) | 2011-02-17 | 2018-09-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Programmable lsi |
| US8659015B2 (en) | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5827145B2 (en) | 2011-03-08 | 2015-12-02 | 株式会社半導体エネルギー研究所 | Signal processing circuit |
| JP5883699B2 (en) | 2011-04-13 | 2016-03-15 | 株式会社半導体エネルギー研究所 | Programmable LSI |
| KR101889383B1 (en) | 2011-05-16 | 2018-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Programmable logic device |
| TWI571058B (en) | 2011-05-18 | 2017-02-11 | 半導體能源研究所股份有限公司 | Semiconductor device and method of driving the same |
| US8779799B2 (en) | 2011-05-19 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit |
| US8581625B2 (en) | 2011-05-19 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| JP5892852B2 (en) | 2011-05-20 | 2016-03-23 | 株式会社半導体エネルギー研究所 | Programmable logic device |
| JP6013682B2 (en) | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | Driving method of semiconductor device |
| JP5912844B2 (en) | 2011-05-31 | 2016-04-27 | 株式会社半導体エネルギー研究所 | Programmable logic device |
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| KR101962261B1 (en) | 2011-07-15 | 2019-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for driving the same |
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| US20130300456A1 (en) * | 2012-05-10 | 2013-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor chip and semiconductor device |
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| CN104321967B (en) | 2012-05-25 | 2018-01-09 | 株式会社半导体能源研究所 | Programmable logic device and semiconductor device |
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| KR102102589B1 (en) * | 2012-10-17 | 2020-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Programmable logic device |
| KR102227591B1 (en) * | 2012-10-17 | 2021-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| TWI661553B (en) | 2012-11-16 | 2019-06-01 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
| KR102112364B1 (en) | 2012-12-06 | 2020-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| TWI611419B (en) * | 2012-12-24 | 2018-01-11 | 半導體能源研究所股份有限公司 | Programmable logic device and semiconductor device |
| KR102125593B1 (en) * | 2013-02-13 | 2020-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Programmable logic device and semiconductor device |
| JP2014195243A (en) | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JP6068748B2 (en) * | 2013-03-13 | 2017-01-25 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US9612795B2 (en) | 2013-03-14 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device, data processing method, and computer program |
| US9112460B2 (en) | 2013-04-05 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device |
| TWI621337B (en) * | 2013-05-14 | 2018-04-11 | 半導體能源研究所股份有限公司 | Signal processing device |
| US9704886B2 (en) | 2013-05-16 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device |
| US9209795B2 (en) | 2013-05-17 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device and measuring method |
| US9106223B2 (en) | 2013-05-20 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device |
| JP6057106B2 (en) * | 2013-05-29 | 2017-01-11 | 株式会社Joled | THIN FILM TRANSISTOR DEVICE, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE |
| TWI633650B (en) * | 2013-06-21 | 2018-08-21 | 半導體能源研究所股份有限公司 | Semiconductor device |
| TW201513128A (en) | 2013-07-05 | 2015-04-01 | Semiconductor Energy Lab | Semiconductor device |
| CN110571278A (en) | 2013-10-22 | 2019-12-13 | 株式会社半导体能源研究所 | semiconductor device |
| JP6483402B2 (en) | 2013-11-01 | 2019-03-13 | 株式会社半導体エネルギー研究所 | Storage device and electronic apparatus having storage device |
| JP6478562B2 (en) | 2013-11-07 | 2019-03-06 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US9385054B2 (en) | 2013-11-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and manufacturing method thereof |
| JP6393590B2 (en) * | 2013-11-22 | 2018-09-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| TWI637484B (en) | 2013-12-26 | 2018-10-01 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
| US9349418B2 (en) | 2013-12-27 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| US9300292B2 (en) | 2014-01-10 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Circuit including transistor |
| US9379713B2 (en) | 2014-01-17 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and driving method thereof |
| JP6473626B2 (en) | 2014-02-06 | 2019-02-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2015165226A (en) | 2014-02-07 | 2015-09-17 | 株式会社半導体エネルギー研究所 | apparatus |
| JP6541360B2 (en) | 2014-02-07 | 2019-07-10 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US9869716B2 (en) | 2014-02-07 | 2018-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Device comprising programmable logic element |
| WO2015118435A1 (en) | 2014-02-07 | 2015-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Device |
| US9294096B2 (en) | 2014-02-28 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9419622B2 (en) | 2014-03-07 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6541376B2 (en) | 2014-03-13 | 2019-07-10 | 株式会社半導体エネルギー研究所 | Method of operating programmable logic device |
| JP6677449B2 (en) | 2014-03-13 | 2020-04-08 | 株式会社半導体エネルギー研究所 | Driving method of semiconductor device |
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