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SE9901440D0 - A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof - Google Patents

A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof

Info

Publication number
SE9901440D0
SE9901440D0 SE9901440A SE9901440A SE9901440D0 SE 9901440 D0 SE9901440 D0 SE 9901440D0 SE 9901440 A SE9901440 A SE 9901440A SE 9901440 A SE9901440 A SE 9901440A SE 9901440 D0 SE9901440 D0 SE 9901440D0
Authority
SE
Sweden
Prior art keywords
transistor
sic
high temperature
field effect
temperature application
Prior art date
Application number
SE9901440A
Other languages
English (en)
Other versions
SE9901440A0 (en
SE9901440L (sv
Inventor
Andrei Konstantinov
Susan Savage
Chris Harris
Original Assignee
Ind Mikroelektronik Ct Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of SE9901440L publication Critical patent/SE9901440L/xx
Application filed by Ind Mikroelektronik Ct Ab filed Critical Ind Mikroelektronik Ct Ab
Priority to SE9901440A priority Critical patent/SE9901440A0/sv
Publication of SE9901440D0 publication Critical patent/SE9901440D0/sv
Priority to US09/298,116 priority patent/US6278133B1/en
Priority to CNB008065454A priority patent/CN1190852C/zh
Priority to KR1020017013472A priority patent/KR100654010B1/ko
Priority to AU46347/00A priority patent/AU4634700A/en
Priority to HK02107060.8A priority patent/HK1045602B/zh
Priority to CA2370869A priority patent/CA2370869C/en
Priority to JP2000614508A priority patent/JP5433121B2/ja
Priority to PCT/SE2000/000773 priority patent/WO2000065660A2/en
Priority to DE60043614T priority patent/DE60043614D1/de
Priority to AT00928059T priority patent/ATE453928T1/de
Priority to EP00928059A priority patent/EP1186053B1/en
Publication of SE9901440A0 publication Critical patent/SE9901440A0/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thermistors And Varistors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
SE9901440A 1999-04-22 1999-04-22 A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof SE9901440A0 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SE9901440A SE9901440A0 (en) 1999-04-22 1999-04-22 A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof
US09/298,116 US6278133B1 (en) 1999-04-22 1999-04-23 Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof
EP00928059A EP1186053B1 (en) 1999-04-22 2000-04-20 SiC field-effect transistor and use thereof as gas sensor
AT00928059T ATE453928T1 (de) 1999-04-22 2000-04-20 Sic-feldeffekttransistor und verwendung desselben als gassensor
HK02107060.8A HK1045602B (zh) 1999-04-22 2000-04-20 高溫應用碳化硅場效應晶體管及其使用和製造方法
KR1020017013472A KR100654010B1 (ko) 1999-04-22 2000-04-20 고온 애플리케이션용 탄화규소 전계 효과 트랜지스터, 이러한 트랜지스터의 용도 및 그의 제조 방법
AU46347/00A AU4634700A (en) 1999-04-22 2000-04-20 A field effect transistor of sic for high temperature application, use of such atransistor and a method for production thereof
CNB008065454A CN1190852C (zh) 1999-04-22 2000-04-20 高温应用碳化硅场效应晶体管及其使用和制造方法
CA2370869A CA2370869C (en) 1999-04-22 2000-04-20 A field effect transistor of sic for high temperature application, use of such a transistor and a method for production thereof
JP2000614508A JP5433121B2 (ja) 1999-04-22 2000-04-20 高温利用可能なＳｉＣ電界効果トランジスタ、前記トランジスタの使用およびその製造方法
PCT/SE2000/000773 WO2000065660A2 (en) 1999-04-22 2000-04-20 A FIELD EFFECT TRANSISTOR OF SiC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF
DE60043614T DE60043614D1 (de) 1999-04-22 2000-04-20 SiC-Feldeffekttransistor und Verwendung desselben als Gassensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9901440A SE9901440A0 (en) 1999-04-22 1999-04-22 A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof

Publications (3)

Publication Number Publication Date
SE9901440L SE9901440L (sv) 1900-01-01
SE9901440D0 true SE9901440D0 (sv) 1999-04-22
SE9901440A0 SE9901440A0 (en) 2000-10-23

Family

ID=20415312

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9901440A SE9901440A0 (en) 1999-04-22 1999-04-22 A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof

Country Status (12)

Country Link
US (1) US6278133B1 (sv)
EP (1) EP1186053B1 (sv)
JP (1) JP5433121B2 (sv)
KR (1) KR100654010B1 (sv)
CN (1) CN1190852C (sv)
AT (1) ATE453928T1 (sv)
AU (1) AU4634700A (sv)
CA (1) CA2370869C (sv)
DE (1) DE60043614D1 (sv)
HK (1) HK1045602B (sv)
SE (1) SE9901440A0 (sv)
WO (1) WO2000065660A2 (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883995A (en) 1997-05-20 1999-03-16 Adc Telecommunications, Inc. Fiber connector and adapter
CN1302558C (zh) * 2003-03-06 2007-02-28 北京大学 一种场效应晶体管
US7053425B2 (en) * 2003-11-12 2006-05-30 General Electric Company Gas sensor device
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
JP2006269641A (ja) * 2005-03-23 2006-10-05 National Institute Of Advanced Industrial & Technology 半導体装置及びその製造方法
US20060270053A1 (en) * 2005-05-26 2006-11-30 General Electric Company Apparatus, methods, and systems having gas sensor with catalytic gate and variable bias
JP4571957B2 (ja) * 2007-03-29 2010-10-27 関西電力株式会社 電力変換装置
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
KR101229392B1 (ko) * 2012-09-12 2013-02-05 주식회사 아이엠헬스케어 오믹 접합을 이용하는 ｆｅｔ 기반 바이오 센서
KR102046014B1 (ko) * 2013-03-27 2019-12-02 인텔렉추얼디스커버리 주식회사 하이브리드형 수소센서, 그 제조 방법 및 제어 방법
GB2577271A (en) * 2018-09-19 2020-03-25 Sumitomo Chemical Co Thin film transistor gas sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917182A (sv) * 1972-05-22 1974-02-15
JPS5315773A (en) * 1976-07-28 1978-02-14 Hitachi Ltd Mis type semiconductor device and its production
JPS5832462A (ja) * 1981-08-21 1983-02-25 Toshiba Corp 半導体装置
US4769338A (en) 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
JPS63265156A (ja) * 1987-04-23 1988-11-01 Matsushita Electric Works Ltd イオンセンサ
JP2527775B2 (ja) 1987-12-28 1996-08-28 三菱電機株式会社 電界効果トランジスタ及びその製造方法
US5086321A (en) 1988-06-15 1992-02-04 International Business Machines Corporation Unpinned oxide-compound semiconductor structures and method of forming same
US5362975A (en) * 1992-09-02 1994-11-08 Kobe Steel Usa Diamond-based chemical sensors
US5448085A (en) * 1993-04-05 1995-09-05 The United States Of America As Represented By The Secretary Of The Air Force Limited current density field effect transistor with buried source and drain
JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
SE503265C2 (sv) * 1994-09-23 1996-04-29 Forskarpatent Ab Förfarande och anordning för gasdetektion
US5698771A (en) * 1995-03-30 1997-12-16 The United States Of America As Represented By The United States National Aeronautics And Space Administration Varying potential silicon carbide gas sensor
JP3385938B2 (ja) * 1997-03-05 2003-03-10 株式会社デンソー 炭化珪素半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20020002436A (ko) 2002-01-09
SE9901440A0 (en) 2000-10-23
CN1347570A (zh) 2002-05-01
JP2002543593A (ja) 2002-12-17
EP1186053A2 (en) 2002-03-13
US6278133B1 (en) 2001-08-21
DE60043614D1 (de) 2010-02-11
KR100654010B1 (ko) 2006-12-05
WO2000065660A2 (en) 2000-11-02
CA2370869A1 (en) 2000-11-02
JP5433121B2 (ja) 2014-03-05
EP1186053B1 (en) 2009-12-30
HK1045602B (zh) 2005-09-02
AU4634700A (en) 2000-11-10
HK1045602A1 (en) 2002-11-29
WO2000065660A3 (en) 2001-03-08
SE9901440L (sv) 1900-01-01
CA2370869C (en) 2010-09-21
ATE453928T1 (de) 2010-01-15
CN1190852C (zh) 2005-02-23

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