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SE9501310D0 - A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC - Google Patents

A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

Info

Publication number
SE9501310D0
SE9501310D0 SE9501310A SE9501310A SE9501310D0 SE 9501310 D0 SE9501310 D0 SE 9501310D0 SE 9501310 A SE9501310 A SE 9501310A SE 9501310 A SE9501310 A SE 9501310A SE 9501310 D0 SE9501310 D0 SE 9501310D0
Authority
SE
Sweden
Prior art keywords
sic
dopant
introducing
semiconductor device
source
Prior art date
Application number
SE9501310A
Other languages
English (en)
Inventor
Christopher Harris
Andrei Konstantinov
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9501310A priority Critical patent/SE9501310D0/sv
Publication of SE9501310D0 publication Critical patent/SE9501310D0/sv
Priority to US08/436,488 priority patent/US5851908A/en
Priority to EP96910271A priority patent/EP0820637A1/en
Priority to JP8530948A priority patent/JPH11503571A/ja
Priority to PCT/SE1996/000451 priority patent/WO1996032738A1/en
Priority to US09/115,813 priority patent/US6096627A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
SE9501310A 1995-04-10 1995-04-10 A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC SE9501310D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9501310A SE9501310D0 (sv) 1995-04-10 1995-04-10 A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
US08/436,488 US5851908A (en) 1995-04-10 1995-05-08 Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC
EP96910271A EP0820637A1 (en) 1995-04-10 1996-04-09 A METHOD FOR INTRODUCTION OF AN IMPURITY DOPANT IN SiC, A SEMICONDUCTOR DEVICE FORMED BY THE METHOD AND A USE OF A HIGHLY DOPED AMORPHOUS LAYER AS A SOURCE FOR DOPANT DIFFUSION INTO SiC
JP8530948A JPH11503571A (ja) 1995-04-10 1996-04-09 不純物ドーパントのＳｉＣ中への導入方法、この方法で形成した半導体デバイス及びＳｉＣ中へのドーパント拡散源としての高度ドーピング非晶質層の使用
PCT/SE1996/000451 WO1996032738A1 (en) 1995-04-10 1996-04-09 A METHOD FOR INTRODUCTION OF AN IMPURITY DOPANT IN SiC, A SEMICONDUCTOR DEVICE FORMED BY THE METHOD AND A USE OF A HIGHLY DOPED AMORPHOUS LAYER AS A SOURCE FOR DOPANT DIFFUSION INTO SiC
US09/115,813 US6096627A (en) 1995-04-10 1998-07-15 Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9501310A SE9501310D0 (sv) 1995-04-10 1995-04-10 A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

Publications (1)

Publication Number Publication Date
SE9501310D0 true SE9501310D0 (sv) 1995-04-10

Family

ID=20397897

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9501310A SE9501310D0 (sv) 1995-04-10 1995-04-10 A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

Country Status (5)

Country Link
US (2) US5851908A (sv)
EP (1) EP0820637A1 (sv)
JP (1) JPH11503571A (sv)
SE (1) SE9501310D0 (sv)
WO (1) WO1996032738A1 (sv)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9501310D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
US6107142A (en) * 1998-06-08 2000-08-22 Cree Research, Inc. Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
US6100169A (en) * 1998-06-08 2000-08-08 Cree, Inc. Methods of fabricating silicon carbide power devices by controlled annealing
JP4186337B2 (ja) * 1998-09-30 2008-11-26 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US6429041B1 (en) 2000-07-13 2002-08-06 Cree, Inc. Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
US6391695B1 (en) * 2000-08-07 2002-05-21 Advanced Micro Devices, Inc. Double-gate transistor formed in a thermal process
US6956238B2 (en) * 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
JP4686945B2 (ja) * 2001-09-12 2011-05-25 株式会社デンソー 炭化珪素半導体装置の製造方法
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7275357B2 (en) * 2004-03-30 2007-10-02 Cnh America Llc Cotton module program control using yield monitor signal
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
CN1326219C (zh) * 2004-06-28 2007-07-11 中国科学院半导体研究所 降低磷离子注入[0001]取向的4h－碳化硅电阻率的方法
US7476594B2 (en) * 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
JP4919700B2 (ja) * 2005-05-20 2012-04-18 トヨタ自動車株式会社 半導体装置及びその製造方法
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
KR101529331B1 (ko) 2006-08-17 2015-06-16 크리 인코포레이티드 고전력 절연 게이트 바이폴라 트랜지스터
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP5339698B2 (ja) * 2007-08-20 2013-11-13 新日本無線株式会社 半導体装置の製造方法
JP4935741B2 (ja) * 2008-04-02 2012-05-23 三菱電機株式会社 炭化珪素半導体装置の製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8796809B2 (en) 2008-09-08 2014-08-05 Cree, Inc. Varactor diode with doped voltage blocking layer
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
JP5601848B2 (ja) 2010-02-09 2014-10-08 三菱電機株式会社 ＳｉＣ半導体装置の製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
JP6042658B2 (ja) * 2011-09-07 2016-12-14 トヨタ自動車株式会社 ＳｉＣ半導体素子の製造方法
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
EP2754177A1 (en) 2011-09-11 2014-07-16 Cree, Inc. High current density power module comprising transistors with improved layout
JP6253133B2 (ja) * 2012-04-27 2017-12-27 富士電機株式会社 炭化珪素半導体装置の製造方法
DE102017118864A1 (de) 2017-08-18 2019-02-21 Infineon Technologies Austria Ag Leistungsdiode
CN111341651A (zh) * 2020-03-11 2020-06-26 四川美阔电子科技有限公司 晶体管外延层制作方法
CN113948375A (zh) * 2020-07-16 2022-01-18 珠海格力电器股份有限公司 一种提高半导体有源区杂质激活率的方法及其应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3563817A (en) * 1966-10-06 1971-02-16 Westinghouse Electric Corp Method of producing silicon carbide ultraviolet radiation detectors
US3629011A (en) * 1967-09-11 1971-12-21 Matsushita Electric Industrial Co Ltd Method for diffusing an impurity substance into silicon carbide
IT1209682B (it) * 1985-12-23 1989-08-30 Sgs Microelettronica Spa Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
US5364810A (en) * 1992-07-28 1994-11-15 Motorola, Inc. Methods of forming a vertical field-effect transistor and a semiconductor memory cell
US5286660A (en) * 1992-12-24 1994-02-15 Motorola, Inc. Method for doping a semiconductor wafer having a diffusivity enhancement region
US5270244A (en) * 1993-01-25 1993-12-14 North Carolina State University At Raleigh Method for forming an oxide-filled trench in silicon carbide
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
SE9501310D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC

Also Published As

Publication number Publication date
WO1996032738A1 (en) 1996-10-17
JPH11503571A (ja) 1999-03-26
US6096627A (en) 2000-08-01
EP0820637A1 (en) 1998-01-28
US5851908A (en) 1998-12-22

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