SE326160B - - Google Patents

Info

Publication number: SE326160B
Authority: SE; Sweden

Application number

SE08295/67A

Inventor

R Kappelmeyer

M Kellerbauer

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1966-06-13

Filing date

1967-06-13

Publication date

1970-07-20

1967-06-13 Application filed by Siemens Ag filed Critical Siemens Ag

1970-07-20 Publication of SE326160B publication Critical patent/SE326160B/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

SE08295/67A 1966-06-13 1967-06-13 SE326160B (xx)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DES0104258		1966-06-13

Publications (1)

Publication Number	Publication Date
SE326160B true SE326160B (xx)	1970-07-20

Family

ID=7525738

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE08295/67A SE326160B (xx)	1966-06-13	1967-06-13

Country Status (7)

Country	Link
US (1)	US3501406A (xx)
AT (1)	AT270750B (xx)
CH (1)	CH503518A (xx)
DE (1)	DE1544292C3 (xx)
GB (1)	GB1140656A (xx)
NL (1)	NL6707642A (xx)
SE (1)	SE326160B (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3615261A (en) *	1969-04-02	1971-10-26	Motorola Inc	Method of producing single semiconductor crystals
US3865554A (en) *	1971-09-23	1975-02-11	Little Inc A	Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
US4911896A (en) *	1986-07-24	1990-03-27	General Electric Company	Fused quartz member for use in semiconductor manufacture
US4789596A (en) *	1987-11-27	1988-12-06	Ethyl Corporation	Dopant coated bead-like silicon particles
JPH0777999B2 (ja) *	1989-11-24	1995-08-23	信越半導体株式会社	アンチモンドープ単結晶シリコンの育成方法
NO335110B1 (no) *	2011-10-06	2014-09-15	Elkem Solar As	Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
CN113862776A (zh) *	2021-09-30	2021-12-31	西安奕斯伟材料科技有限公司	一种用于制造掺氮单晶硅的设备及方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2981687A (en) *	1958-04-03	1961-04-25	British Thomson Houston Co Ltd	Production of mono-crystal semiconductor bodies
DE1164680B (de) *	1958-05-21	1964-03-05	Siemens Ag	Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
DE1296132B (de) *	1965-03-19	1969-05-29	Siemens Ag	Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

1966
- 1966-06-13 DE DE1544292A patent/DE1544292C3/de not_active Expired
1967
- 1967-06-01 NL NL6707642A patent/NL6707642A/xx unknown
- 1967-06-08 US US644638A patent/US3501406A/en not_active Expired - Lifetime
- 1967-06-12 CH CH828267A patent/CH503518A/de not_active IP Right Cessation
- 1967-06-12 GB GB26960/67A patent/GB1140656A/en not_active Expired
- 1967-06-12 AT AT544567A patent/AT270750B/de active
- 1967-06-13 SE SE08295/67A patent/SE326160B/xx unknown

Also Published As

Publication number	Publication date
DE1544292B2 (de)	1975-05-28
CH503518A (de)	1971-02-28
AT270750B (de)	1969-05-12
DE1544292A1 (de)	1970-07-02
NL6707642A (xx)	1967-12-14
DE1544292C3 (de)	1976-01-08
US3501406A (en)	1970-03-17
GB1140656A (en)	1969-01-22

Publication	Publication Date	Title
AU5917865A (xx)	1967-11-23
AU428063B2 (xx)	1972-09-13
AU424443B2 (xx)	1972-05-24
AU417216B2 (xx)	1971-09-21
AU421822B2 (xx)	1972-02-28
AU433222B2 (xx)	1973-03-01
AU6703465A (xx)	1968-04-26
AU5895065A (xx)	1967-11-09
AU612166A (xx)	1968-01-04
BE675139A (xx)	1966-05-03
NL6707642A (xx)	1967-12-14
BE693470A (xx)	1967-08-01
BE693291A (xx)	1967-07-03
BE691302A (xx)	1967-05-29
BE690857A (xx)	1967-06-08
AU6852465A (xx)	1968-05-09
BE693890A (xx)	1967-07-17
BE693998A (xx)	1967-07-17
BE694231A (xx)	1967-07-31
BE684218A (xx)	1966-12-16
BE681189A (xx)	1966-10-31
BE675173A (xx)	1966-05-16
BE689787A (xx)	1967-05-16
BE675084A (xx)	1966-04-03
BE674987A (xx)	1966-06-16