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RU95114671A - METHOD FOR REMOVING SILICON MELT IMPURITIES - Google Patents

METHOD FOR REMOVING SILICON MELT IMPURITIES

Info

Publication number
RU95114671A
RU95114671A RU95114671/02A RU95114671A RU95114671A RU 95114671 A RU95114671 A RU 95114671A RU 95114671/02 A RU95114671/02 A RU 95114671/02A RU 95114671 A RU95114671 A RU 95114671A RU 95114671 A RU95114671 A RU 95114671A
Authority
RU
Russia
Prior art keywords
slag
silicon melt
continuously
silicon
density
Prior art date
Application number
RU95114671/02A
Other languages
Russian (ru)
Other versions
RU2098354C1 (en
Inventor
Сшей Андерс
Original Assignee
Элкем А/С
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO943227A external-priority patent/NO180532C/en
Application filed by Элкем А/С filed Critical Элкем А/С
Publication of RU95114671A publication Critical patent/RU95114671A/en
Application granted granted Critical
Publication of RU2098354C1 publication Critical patent/RU2098354C1/en

Links

Claims (10)

1. Способ удаления примесей из расплава кремния путем обработки расплава кремния, помещенного в сосуд, шлаком, способным удалять примеси, в частности бор, из расплава кремния, отличающийся тем, что шлак непрерывно или по существу непрерывно добавляют к расплаву кремния.1. A method of removing impurities from a silicon melt by treating a silicon melt placed in a vessel with slag capable of removing impurities, in particular boron, from a silicon melt, characterized in that the slag is continuously or substantially continuously added to the silicon melt. 2. Способ по п. 1, отличающийся тем, что шлак, имеющий плотность большую, чем плотность расплава кремния, добавляют непрерывно или по существу непрерывно в верхнюю часть расплава кремния и непрерывно или по существу непрерывно выпускают из дна сосуда, в котором осуществляют обработку. 2. The method according to p. 1, characterized in that the slag having a density higher than the density of the silicon melt is added continuously or essentially continuously to the upper part of the silicon melt and continuously or essentially continuously released from the bottom of the vessel in which the processing is carried out. 3. Способ по п. 1, отличающийся тем, что шлак, имеющий плотность более низкую, чем плотность кремния, подают в ванну расплава кремния через дно или через нижнюю часть стенки сосуда, содержащего расплав кремния, и шлак поднимается в верхнюю часть ванны расплава кремния, где его непрерывно или по существу непрерывно удаляют. 3. The method according to p. 1, characterized in that the slag having a density lower than the density of silicon is fed into the bath of silicon melt through the bottom or through the lower part of the wall of the vessel containing the silicon melt, and the slag rises to the upper part of the bath of silicon melt where it is continuously or substantially continuously removed. 4. Способ по п. 1, отличающийся тем, что шлаковую обработку осуществляют в противотоке шлака и кремния. 4. The method according to p. 1, characterized in that the slag treatment is carried out in countercurrent slag and silicon. 5. Способ по п. 4, отличающийся тем, что противоток шлака и кремния осуществляют посредством перемещения расплава кремния и расплава шлака в противотоке через два или более сосудов. 5. The method according to p. 4, characterized in that the counterflow of slag and silicon is carried out by moving the molten silicon and molten slag in countercurrent through two or more vessels. 6. Способ удаления примесей из расплава кремния путем обработки расплава кремния, помещенного в сосуд, шлаком, способным удалять примеси, в частности, бор, из расплава, отличающийся тем, что шлак непрерывно или по существу непрерывно инактивируют или удаляют из расплава кремния, как только между шлаком и расплавом кремния достигается равновесие в отношении примесных элементов или элементов, подлежащих удалению. 6. A method for removing impurities from a silicon melt by treating a silicon melt placed in a vessel with slag capable of removing impurities, in particular boron, from the melt, characterized in that the slag is continuously or substantially continuously inactivated or removed from the silicon melt as soon as between the slag and the molten silicon equilibrium is achieved in relation to impurity elements or elements to be removed. 7. Способ по п. 6, отличающийся тем, что шлак инактивируют путем добавления одного или более ингредиентов к шлаку, которые увеличивают его плотность. 7. The method according to p. 6, characterized in that the slag is inactivated by adding one or more ingredients to the slag, which increase its density. 8. Способ по п. 7, отличающийся тем, что для того, чтобы увеличить плотность шлака, к шлаку добавляют соединения бария и/или соединения стронция. 8. The method according to p. 7, characterized in that in order to increase the density of the slag, barium compounds and / or strontium compounds are added to the slag. 9. Способ по п. 6, отличающийся тем, что шлак, имеющий плотность большую, чем плотность расплава кремния, добавляют непрерывно или по существу непрерывно в верхнюю часть расплава кремния и шлак оседает в виде шлакового слоя на дне сосуда, в котором осуществляют обработку. 9. The method according to p. 6, characterized in that the slag having a density higher than the density of the silicon melt is added continuously or substantially continuously to the upper part of the silicon melt and the slag deposits in the form of a slag layer on the bottom of the vessel in which the processing is carried out. 10. Способ по п. 9, отличающийся тем, что шлаковый слой поддерживают при более низкой температуре, чем расплав кремния. 10. The method according to p. 9, characterized in that the slag layer is maintained at a lower temperature than the silicon melt.
RU9595114671A 1994-09-01 1995-08-31 Method of removing impurities from silicon melt RU2098354C1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO943227A NO180532C (en) 1994-09-01 1994-09-01 Process for removing contaminants from molten silicon
NO943227 1994-09-01

Publications (2)

Publication Number Publication Date
RU95114671A true RU95114671A (en) 1997-07-27
RU2098354C1 RU2098354C1 (en) 1997-12-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU9595114671A RU2098354C1 (en) 1994-09-01 1995-08-31 Method of removing impurities from silicon melt

Country Status (16)

Country Link
US (1) US5788945A (en)
EP (1) EP0699625B1 (en)
JP (1) JP2851257B2 (en)
KR (1) KR0178071B1 (en)
CN (1) CN1042821C (en)
AT (1) ATE178031T1 (en)
AU (1) AU682277B2 (en)
BR (1) BR9503835A (en)
DE (1) DE69508498T2 (en)
DK (1) DK0699625T3 (en)
ES (1) ES2130535T3 (en)
FI (1) FI114092B (en)
GR (1) GR3030154T3 (en)
NO (1) NO180532C (en)
RU (1) RU2098354C1 (en)
ZA (1) ZA956186B (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368403B1 (en) * 1997-08-28 2002-04-09 Crystal Systems, Inc. Method and apparatus for purifying silicon
NO316020B1 (en) * 2001-10-10 2003-12-01 Elkem Materials Device for continuous slag treatment of silicon
WO2003066523A1 (en) * 2002-02-04 2003-08-14 Sharp Kabushiki Kaisha Silicon purifying method, slag for purifying silicon, and purified silicon
NO318092B1 (en) * 2002-05-22 2005-01-31 Elkem Materials Calcium-silicate-based slag, process for the preparation of calcium-silicate-based slag, and application for slag treatment of molten silicon
JP4354265B2 (en) * 2003-12-11 2009-10-28 新日鉄マテリアルズ株式会社 Slag separation method in silicon refining
NO333319B1 (en) * 2003-12-29 2013-05-06 Elkem As Silicon material for the production of solar cells
JP4766837B2 (en) * 2004-03-03 2011-09-07 新日鉄マテリアルズ株式会社 Method for removing boron from silicon
RU2371386C2 (en) * 2004-04-08 2009-10-27 Дау Корнинг Корпорейшн Method of selecting silicon with improved characteristics
JP4632769B2 (en) 2004-12-09 2011-02-16 シャープ株式会社 Silicon purification method
JP4782428B2 (en) * 2005-01-11 2011-09-28 新日鉄マテリアルズ株式会社 Silicon refining method
JP4511957B2 (en) * 2005-01-24 2010-07-28 新日鉄マテリアルズ株式会社 Silicon refining method
JP4966560B2 (en) * 2005-03-07 2012-07-04 新日鉄マテリアルズ株式会社 Manufacturing method of high purity silicon
JP5140835B2 (en) * 2005-03-07 2013-02-13 新日鉄住金マテリアルズ株式会社 Manufacturing method of high purity silicon
JP4689373B2 (en) * 2005-07-04 2011-05-25 シャープ株式会社 How to reuse silicon
RU2301840C2 (en) * 2005-09-16 2007-06-27 Общество с ограниченной ответственностью "Международная академическая корпорация науки и техники" (ООО "МАКНиТ") Device for cleaning liquid silicon
JP4671872B2 (en) * 2006-01-18 2011-04-20 新日鉄マテリアルズ株式会社 Silicon refining method
US7820126B2 (en) * 2006-08-18 2010-10-26 Iosil Energy Corporation Method and apparatus for improving the efficiency of purification and deposition of polycrystalline silicon
EA015387B1 (en) * 2006-09-14 2011-08-30 Силисиум Беканкур Инк. Process and apparatus for purifying low-grade silicon material
KR20100061510A (en) * 2007-09-13 2010-06-07 실리슘 비캔커 인코포레이티드 Process for the production of medium and high purity silicon from metallurgical grade silicon
CN102067277B (en) * 2008-04-11 2013-09-18 伊奥西尔能源公司 Method and apparatus for recovering silicon and silicon carbide from waste wafer saw pulp
RU2500618C2 (en) * 2008-05-27 2013-12-10 Спонт Прайват С.А.Р.Л. Halogenide-containing silicon, method of its obtaining and its application
DE102008036143A1 (en) 2008-08-01 2010-02-04 Berlinsolar Gmbh Process for removing nonmetallic impurities from metallurgical silicon
US8329133B2 (en) * 2008-11-03 2012-12-11 Gt Crystal Systems, Llc Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
US9050652B2 (en) * 2008-11-14 2015-06-09 Carnegie Mellon University Methods for casting by a float process and associated apparatuses
NO330928B1 (en) 2009-01-13 2011-08-22 Elkem Solar As Apparatus and method for the treatment of immiscible liquids
IT1394029B1 (en) 2009-05-12 2012-05-25 Raysolar S R L METHOD FOR THE PURIFICATION OF SILICON AND APPARATUS WITH WHICH TO REALIZE IT
CN101955186A (en) * 2010-09-19 2011-01-26 江西盛丰新能源科技有限公司 Method for preparing polycrystalline silicon by physically removing boron
KR101222175B1 (en) * 2011-03-31 2013-01-14 연세대학교 산학협력단 Refining method of impurities from MG-Si by utilizing the density difference between molten Si and reducing slags
CN103011169B (en) * 2012-12-14 2014-05-07 厦门大学 A kind of preparation method of sheet silicon
NO339608B1 (en) 2013-09-09 2017-01-09 Elkem Solar As Multicrystalline silicon ginger, silicon master alloy, process for increasing the yield of multicrystalline silicon ginger for solar cells
CN103754882B (en) * 2013-12-27 2015-07-08 福建兴朝阳硅材料股份有限公司 Purifying method of slag-making agent with boron removal
RU2600055C1 (en) * 2015-05-26 2016-10-20 Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") Method and device for refining technical silicon
CN105063749B (en) * 2015-06-08 2017-07-18 朱超 A kind of method for preparing high-purity polycrystalline silicon
GB201621609D0 (en) * 2016-12-19 2017-02-01 Norwegian Univ Of Science And Tech (Ntnu) Process for the production of commercial grade silicon
TWI640473B (en) 2017-12-07 2018-11-11 財團法人工業技術研究院 Method and apparatus for removing boron
AU2019437369B2 (en) * 2019-03-22 2021-12-02 Wacker Chemie Ag Method for producing technical silicon
EP3921282B1 (en) * 2019-03-27 2025-05-21 Wacker Chemie AG Method for producing technical silicon
US12338127B2 (en) 2019-04-30 2025-06-24 Wacker Chemie Ag Method for refining crude silicon melts using a particulate mediator

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1100218B (en) * 1978-11-09 1985-09-28 Montedison Spa SILICON PURIFICATION PROCEDURE
US4247528A (en) * 1979-04-11 1981-01-27 Dow Corning Corporation Method for producing solar-cell-grade silicon
US4312848A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Boron removal in silicon purification
DE2945072A1 (en) * 1979-11-08 1981-06-04 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen METHOD FOR CLEANING RAW SILICON
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
FR2556333A1 (en) * 1983-12-09 1985-06-14 Hanna Mining Co Process for purifying silicon for applications requiring high purity
US4643833A (en) * 1984-05-04 1987-02-17 Siemens Aktiengesellschaft Method for separating solid reaction products from silicon produced in an arc furnace
US4612179A (en) * 1985-03-13 1986-09-16 Sri International Process for purification of solid silicon
NO901150D0 (en) * 1987-09-15 1990-03-12 Casco Nobel Ab PROCEDURE FOR CLEANING SILICONE.
SE460287B (en) * 1987-09-15 1989-09-25 Casco Nobel Ab PROCEDURE FOR PURIFICATION OF SILICONE FROM BORN
JP2856839B2 (en) * 1990-05-11 1999-02-10 川崎製鉄株式会社 Silicon purification method
JP2846408B2 (en) * 1990-05-30 1999-01-13 川崎製鉄株式会社 Silicon purification method
JP3205352B2 (en) * 1990-05-30 2001-09-04 川崎製鉄株式会社 Silicon purification method and apparatus
US5208001A (en) * 1991-06-20 1993-05-04 Texas Instruments Incorporated Method for silicon purification
DE4122190C2 (en) * 1991-07-04 1995-07-06 Wacker Chemie Gmbh Method and apparatus for continuous treatment of silicon
CN1080264A (en) * 1993-03-01 1994-01-05 吴旺河 Industrial silicon slag-cleaning and calcium-removing device and process for purification thereof

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