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RU93015910A - SEMICONDUCTOR RADIATOR - Google Patents

SEMICONDUCTOR RADIATOR

Info

Publication number
RU93015910A
RU93015910A RU93015910/25A RU93015910A RU93015910A RU 93015910 A RU93015910 A RU 93015910A RU 93015910/25 A RU93015910/25 A RU 93015910/25A RU 93015910 A RU93015910 A RU 93015910A RU 93015910 A RU93015910 A RU 93015910A
Authority
RU
Russia
Prior art keywords
photodiode
output window
semiconductor
semiconductor radiator
emitting crystal
Prior art date
Application number
RU93015910/25A
Other languages
Russian (ru)
Other versions
RU2083031C1 (en
Inventor
М.И. Свердлов
В.В. Мучкин
А.Н. Миряха
Т.А. Андрушкевич
Original Assignee
Саратовский научно-исследовательский институт "Волга"
Filing date
Publication date
Application filed by Саратовский научно-исследовательский институт "Волга" filed Critical Саратовский научно-исследовательский институт "Волга"
Priority to RU93015910A priority Critical patent/RU2083031C1/en
Priority claimed from RU93015910A external-priority patent/RU2083031C1/en
Publication of RU93015910A publication Critical patent/RU93015910A/en
Application granted granted Critical
Publication of RU2083031C1 publication Critical patent/RU2083031C1/en

Links

Claims (1)

Устройство относится к оптоэлектронике и может быть использовано для изготовления полупроводниковых излучателей со встроенным фотодиодом для осуществления автоматической регулировки мощности излучения. Полупроводниковый излучатель содержит корпус с закрепленными на нем светоизлучающим кристаллом и фотодиодом и крышку с выходным окном. Фотодиод расположен между излучающим кристаллом и выходным окном, а выходное окно расположено перпендикулярно геометрической оси излучения, причем одна часть выходного окна имеет просветляющее покрытие, а другая часть - отражающее.The device relates to optoelectronics and can be used for the manufacture of semiconductor emitters with an integrated photodiode for automatic adjustment of the radiation power. A semiconductor emitter includes a housing with a light-emitting crystal and a photodiode mounted on it and a cover with an exit window. The photodiode is located between the emitting crystal and the output window, and the output window is located perpendicular to the geometric axis of the radiation, with one part of the output window has antireflection coating, and the other part is reflective.
RU93015910A 1993-03-26 1993-03-26 Semiconductor radiator RU2083031C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU93015910A RU2083031C1 (en) 1993-03-26 1993-03-26 Semiconductor radiator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU93015910A RU2083031C1 (en) 1993-03-26 1993-03-26 Semiconductor radiator

Publications (2)

Publication Number Publication Date
RU93015910A true RU93015910A (en) 1995-02-27
RU2083031C1 RU2083031C1 (en) 1997-06-27

Family

ID=20139303

Family Applications (1)

Application Number Title Priority Date Filing Date
RU93015910A RU2083031C1 (en) 1993-03-26 1993-03-26 Semiconductor radiator

Country Status (1)

Country Link
RU (1) RU2083031C1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI529348B (en) * 2011-03-07 2016-04-11 皇家飛利浦電子股份有限公司 A light emitting module, a lamp, a luminaire and a display device
JP6170495B2 (en) * 2011-09-20 2017-07-26 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Light emitting module, lamp, lighting fixture and display device
RU2624453C2 (en) * 2011-10-18 2017-07-04 Филипс Лайтинг Холдинг Б.В. Split beam lighting device and lighting system

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