RU2218364C2 - POLY(α,α,α′,α′-TETRAFLUORO-P-XYLYLENE) FILM, METHOD FOR PREPARATION THEREOF, AND SEMICONDUCTOR DEVICE EMPLOYING IT - Google Patents

Abstract

FIELD: polymer materials. SUBSTANCE: invention relates to insulating films, which are applied in electronics. poly(α,α,α′,α′-tetrafluoro-o-xylylene) film is prepared by sublimation of octafluoro-p-cyclophane at 30-70 C and pressure 0.001-0.1 mm Hg to form gaseous product followed by pyrolysis at 680-770 C and flow velocity from sublimation zone to pyrolysis zone 0.0060 g/min, condensation simultaneously with supported polymerization of (α,α,α′,α′-tetrafluoro-p-xylylene) obtained in pyrolysis zone at temperature from -40 to +20 C and polymer layer formation velocity 0.26-0.29 mcm/min. Film is further subjected to heat treatment by stepped heating at 200-400 C wherein heating steps are alternated with holding at constant temperature, number of steps being 6 at pressure 0.001- 0.1 mm Hg under inert atmosphere or in air. Film is characterized by dielectric constant no higher than 2,5 and weight loss below 0.05% after heating during at least 1 h at 400 C. Device, in which film is employed, is made from semiconductor support, on the surface of which first layer of intercircuit connections is formed followed by poly(α,α,α′,α′-tetrafluoro-pxylylene) film, silica layer, and second layer of intercircuit connections electrically connected to the first layer of intercircuit connections over through-holes in silica film and insulating film. EFFECT: enabled preparation of film with low dielectric constant and high heat resistance. 7 cl, 3 dwg

Description

 Texi descriptions in facsimile form (see graphic part).

Claims (7)

1. A method of producing a film of poly (α, α, α ', α'-tetrafluoroparaxylene), which consists in the fact that they carry out the sublimation of 1,1,2,2,9,9,10,10-octafluorine [2,2] paracyclophan at 30-70 ° C and a pressure of 0.001-0.1 mm Hg to the formation of gaseous 1,1,2,2,9,9,10,10-octafluoro [2,2] paracyclophan, pyrolysis at 680-770 ° C and a flow rate from the sublimation zone to the pyrolysis zone to 0.0060 g / min condensation with simultaneous polymerization on the substrate of α, α, α ', α'-tetrafluoroparaxylylene obtained in the pyrolysis zone at (-40) - (+20) ° С and the rate of formation of the polymer layer 0.26-0.29 μm / min, moreover, the pyrolysis and polymerization stages are carried out under reduced pressure, followed by heat treatment of the obtained film from poly (α, α, α ', α'-tetrafluoroparaxylene) by stepwise heating at a temperature from 200 to 400 ° C with alternating heating and holding at a constant temperature in six stages at a pressure of 0.001-0.1 mm RT. Art. in an inert atmosphere or in air. 2. The method according to claim 1, characterized in that the heat treatment is carried out at a pressure of 0.001-0.1 mm RT. Art. or in an inert atmosphere by heating a film of poly (α, α, α ', α'-tetrafluoroparaxylene) in the first stage to 200 ° C at a rate of temperature rise of not more than 5 ° C / min, exposure to the second stage at 200 ° C is not less than 30 min, heating in the third stage to 380 ° C at a rate of temperature rise of not more than 1 ° C / min and holding in the fourth stage at 380 ° C for at least 60 min, heating in the fifth stage to 400 ° C at a speed of temperature rise more than 0.5 ° C / min and holding at the sixth stage at 400 ° C for at least 60 minutes 3. The method according to claim 1, characterized in that the heat treatment is carried out in air by heating a film of poly (α, α, α ', α'-tetrafluoroparaxylene) in the first stage to 200 ° C at a rate of temperature rise of not more than 10 ° C / min, holding in the second stage at 200 ° C for at least 15 min, heating in the third stage to 380 ° C at a rate of temperature rise of no more than 3 ° C / min, holding in the fourth stage at 380 ° C for at least 30 min, heating in the fifth stage to 400 ° C at a rate of temperature rise of not more than 1.0 ° C / min and soaking in the sixth stage at 400 ° C for at least 30 minutes. 4. A film of poly (α, α, α ', α'-tetrafluoroparaxylylene) with a dielectric constant of not more than 2.5 and a mass loss of less than 0.05% after at least about 1 hour of heating at a temperature of about 400 ° C, obtained by the method according to PP. 1-3. 5. A semiconductor device made of a semiconductor substrate, on the surface of which a first layer of interconnects, an insulating film of poly (α, α, α ', α'-tetrafluoroparaxylene) is formed according to claim 4, obtained by the method according to claims 1-3 and formed on the surface of the first interconnect layer, a silicon oxide film formed on the insulating film, and the second interconnect layer formed on the silicon oxide film and electrically connected to the first interconnect layer through the through holes in the silicon oxide film and the insulator uyuschey film. 6. The semiconductor device according to claim 5, characterized in that it further comprises a thin film of a resistance layer formed on a film of silicon oxide and made of a mixture of chromium and silicon oxide. 7. The semiconductor device according to claims 5 and 6, characterized in that the first and second layers of the interconnects are formed of aluminum.

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