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RU2018113434A - Способ изготовления составной подложки из sic - Google Patents

Способ изготовления составной подложки из sic Download PDF

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RU2018113434A
RU2018113434A RU2018113434A RU2018113434A RU2018113434A RU 2018113434 A RU2018113434 A RU 2018113434A RU 2018113434 A RU2018113434 A RU 2018113434A RU 2018113434 A RU2018113434 A RU 2018113434A RU 2018113434 A RU2018113434 A RU 2018113434A
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sic
substrate
crystal
layer
manufacturing
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RU2018113434A
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RU2018113434A3 (ru
RU2728484C2 (ru
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Содзи АКИЯМА
Йосихиро КУБОТА
Хироюки НАГАСАВА
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Син-Эцу Кемикал Ко., Лтд.
Кусик Инк.
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Publication of RU2018113434A3 publication Critical patent/RU2018113434A3/ru
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Claims (7)

1. Способ изготовления составной подложки из SiC, содержащей монокристаллический слой SiC на поликристаллической подложке из SiC, причем способ содержит следующие этапы в таком порядке: обеспечение монокристаллического слоя SiC на одной стороне опорной подложки из кремния с получением носителя монокристаллического слоя SiC; в ходе изготовления слоистой структуры с SiC, содержащей наслоенные на опорную подложку монокристаллический слой SiC и поликристаллическую подложку из SiC толщиной t, с использованием процесса химического осаждения из паровой фазы для осаждения поликристаллического SiC на монокристаллический слой SiC, нагрев носителя монокристаллического слоя SiC до температуры ниже 1414°C и осаждение на него лишь части толщины t поликристаллического SiC, с последующими подъемом температуры до 1414°C или выше и дополнительным осаждением поликристаллического SiC до толщины t, при расплавлении по меньшей мере части опорной подложки, а затем охлаждением; и физическое и/или химическое удаление опорной подложки.
2. Способ изготовления составной подложки из SiC по п. 1, в котором толщина поликристаллического SiC, осажденного при нагреве носителя монокристаллического SiC до температуры ниже 1414°C, составляет по меньшей мере 30 мкм.
3. Способ изготовления составной подложки из SiC по п. 1 или 2, в котором толщина t поликристаллической подложки из SiC составляет по меньшей мере 100 мкм и не более 650 мкм.
4. Способ изготовления составной подложки из SiC по любому из пп. 1-3, в котором процесс химического осаждения из паровой фазы представляет собой термохимическое осаждение из паровой фазы.
5. Способ изготовления составной подложки из SiC по любому из пп. 1-4, в котором между опорной подложкой и монокристаллическим слоем SiC обеспечивают промежуточный слой из оксида кремния, нитрида кремния или оксинитрида кремния.
6. Способ изготовления составной подложки из SiC по любому из пп. 1-5, в котором монокристаллический слой SiC обеспечивают путем перенесения на опорную подложку монокристаллической тонкой пленки SiC, отслоенной от монокристаллической подложки из SiC путем расслаивания с помощью ионной имплантации.
7. Способ изготовления составной подложки из SiC по любому из пп. 1-5, в котором монокристаллический слой SiC обеспечивают путем гетероэпитаксиального выращивания SiC на опорной подложке.
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