[go: up one dir, main page]

RU2015104180A - Элемент детектора излучения - Google Patents

Элемент детектора излучения Download PDF

Info

Publication number
RU2015104180A
RU2015104180A RU2015104180A RU2015104180A RU2015104180A RU 2015104180 A RU2015104180 A RU 2015104180A RU 2015104180 A RU2015104180 A RU 2015104180A RU 2015104180 A RU2015104180 A RU 2015104180A RU 2015104180 A RU2015104180 A RU 2015104180A
Authority
RU
Russia
Prior art keywords
solder
ball
ball lead
photodiode
radiation detector
Prior art date
Application number
RU2015104180A
Other languages
English (en)
Inventor
ВЕН Николас Йоханнес Антониус ВАН
Рафаэль ГОШЕН
Давид ЙОГЕВ
Амир ЛИВНЕ
Original Assignee
Конинклейке Филипс Н.В.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Конинклейке Филипс Н.В. filed Critical Конинклейке Филипс Н.В.
Publication of RU2015104180A publication Critical patent/RU2015104180A/ru

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/042—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
    • H01L2224/091—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
    • H01L2224/091—Disposition
    • H01L2224/0912—Layout
    • H01L2224/0916—Random array, i.e. array with no symmetry
    • H01L2224/09164—Random array, i.e. array with no symmetry covering only portions of the surface to be connected
    • H01L2224/09165—Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16104—Disposition relative to the bonding area, e.g. bond pad
    • H01L2224/16105—Disposition relative to the bonding area, e.g. bond pad the bump connector connecting bonding areas being not aligned with respect to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16113—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16148—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a bonding area protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/165—Material
    • H01L2224/16505—Material outside the bonding interface, e.g. in the bulk of the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/165—Material
    • H01L2224/16505—Material outside the bonding interface, e.g. in the bulk of the bump connector
    • H01L2224/16506—Material outside the bonding interface, e.g. in the bulk of the bump connector comprising an eutectic alloy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8103—Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector
    • H01L2224/81047—Reshaping the bump connector in the bonding apparatus, e.g. flattening the bump connector by mechanical means, e.g. severing, pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Claims (20)

1. Элемент (2) детектора излучения, содержащий по меньшей мере один фотодиод (22), имеющий первую основную поверхность (221), простирающуюся вдоль первой основной оси (222), и подложку (21) элемента детектора, имеющую вторую основную поверхность (211), простирающуюся вдоль второй основной оси (212), которая ориентирована поперечно относительно первой основной оси, при этом фотодиод находится в электрическом контакте с подложкой элемента детектора с помощью по меньшей мере одного соединения (25, 45), при этом соединение содержит два сплавленных шариковых вывода (251, 451, 252, 452) из припоя, при этом первый из двух сплавленных шариковых выводов (251, 451) из припоя контактирует с фотодиодом, а второй из двух сплавленных шариковых выводов (251, 452) из припоя контактирует с подложкой элемента детектора.
2. Элемент детектора излучения по п. 1, в котором первая основная ось (222) фотодиода (22) ориентирована практически перпендикулярно относительно второй основной оси (212) подложки (21) элемента детектора.
3. Элемент детектора излучения по п. 1, в котором состав первого шарикового вывода (451) из припоя и/или второго шарикового вывода (452) из припоя содержит висмут, предпочтительно висмут-оловянный сплав или висмут-олово-индиевый сплав.
4. Элемент детектора излучения по п. 1, дополнительно содержащий сцинтиллирующий материал (23), связанный с фотодиодом, при этом сцинтиллирующий материал предпочтительно содержит два расположенных друг над другом сцинтиллирующих слоя (231, 232).
5. Элемент детектора излучения по п. 1, дополнительно содержащий экранирующий излучение элемент (24), связанный с фотодиодом, при этом экранирующий элемент предпочтительно содержит вольфрам.
6. Элемент детектора излучения по п. 1, содержащий по меньшей мере 32 соединения, предпочтительно содержащий по меньшей мере 36 соединений, и содержащий по меньшей мере 16 фотодиодов.
7. Элемент детектора излучения по любому из пп. 1-6, в котором первая основная поверхность лежит в первой плоскости, а вторая основная поверхность лежит во второй плоскости, при этом упомянутые первая плоскость и вторая плоскость ориентированы поперечно относительно друг друга.
8. Устройство (1) медицинской визуализации, такое как устройство компьютерной томографии, содержащее по меньшей мере один элемент (2) детектора излучения по любому из предшествующих пунктов.
9. Способ получения детектора излучения, содержащего по меньшей мере один фотодиод, имеющий первую основную поверхность, простирающуюся вдоль первой основной оси, и подложку элемента детектора, имеющую вторую основную поверхность, простирающуюся вдоль второй основной оси; при этом способ содержит этапы:
- наносят (501) первый шариковый вывод из припоя на первую основную поверхность фотодиода;
- наносят (511) второй шариковый вывод из припоя на вторую основную поверхность подложки элемента детектора;
- сплющивают (502) упомянутый первый шариковый вывод из припоя и/или упомянутый второй шариковый вывод из припоя;
- позиционируют (504) фотодиод так, что первая основная ось ориентируется поперечно, под углом α относительно второй основной оси, при этом первый шариковый вывод из припоя и второй шариковый вывод из припоя располагают поблизости относительно друг друга, так что первый шариковый вывод из припоя будет смачивать второй шариковый вывод из припоя, когда он будет расширяться при нагреве;
- нагревают (505) первый шариковый вывод из припоя и второй шариковый вывод из припоя до температуры выше точки плавления первого шарикового вывода из припоя и второго шарикового вывода из припоя.
10. Способ по п. 9, дополнительно содержащий нанесение (503) сцинтиллирующего слоя (43) и/или экранирующего слоя (44) на фотодиод (42).
11. Способ по п. 9, при этом α находится между 80° и 90°, предпочтительно между 85° и 90°, более предпочтительно между 89° и 90°, а наиболее предпочтительно между 89,5° и 90°.
12. Способ по п. 9, при этом этап сплющивания (502) первых шариковых выводов из припоя и/или второго шарикового вывода из припоя содержит прессование первого и второго шарикового вывода из припоя, предпочтительно горячим прессованием при температуре ниже температуры плавления первого и/или второго шарикового вывода из припоя или шариковых выводов из припоя, подлежащих прессованию.
13. Способ по п. 9, при этом первый шариковый вывод из припоя и второй шариковый вывод из припоя имеют диаметр менее 500 микрон, предпочтительно приблизительно 300 микрон.
14. Способ по п. 9, при этом этап нагрева (505) содержит лазерный нагрев.
15. Способ по п. 9, при этом имеются по меньшей мере два первых шариковых вывода из припоя и по меньшей мере два вторых шариковых вывода из припоя, которые на этапе нагрева нагревают одновременно.
RU2015104180A 2013-09-05 2014-09-04 Элемент детектора излучения RU2015104180A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13183184 2013-09-05
EP13183184.4 2013-09-05
PCT/EP2014/068852 WO2015032865A1 (en) 2013-09-05 2014-09-04 Radiation detector element

Publications (1)

Publication Number Publication Date
RU2015104180A true RU2015104180A (ru) 2017-10-10

Family

ID=49111034

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015104180A RU2015104180A (ru) 2013-09-05 2014-09-04 Элемент детектора излучения

Country Status (7)

Country Link
US (1) US9748300B2 (ru)
EP (1) EP3042395B1 (ru)
JP (1) JP5966091B2 (ru)
CN (1) CN104603640B (ru)
BR (1) BR112015008750A2 (ru)
RU (1) RU2015104180A (ru)
WO (1) WO2015032865A1 (ru)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3186833B1 (en) * 2015-05-26 2018-08-22 Siemens Healthcare GmbH Radiation detector device
CN110368012B (zh) * 2019-07-04 2023-05-02 东软医疗系统股份有限公司 探测器、医用放射诊断设备及探测器的组装方法
JP2021121011A (ja) * 2020-01-30 2021-08-19 軍生 木本 半導体装置
JP2021107805A (ja) * 2020-09-16 2021-07-29 株式会社ジョブ 放射線検出器およびその製造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204396A (ja) * 1992-12-28 1994-07-22 Rohm Co Ltd 半導体装置
US5492266A (en) * 1994-08-31 1996-02-20 International Business Machines Corporation Fine pitch solder deposits on printed circuit board process and product
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5899737A (en) 1996-09-20 1999-05-04 Lsi Logic Corporation Fluxless solder ball attachment process
US7007833B2 (en) * 1997-05-27 2006-03-07 Mackay John Forming solder balls on substrates
US6140696A (en) 1998-01-27 2000-10-31 Micron Technology, Inc. Vertically mountable semiconductor device and methods
JP2000012587A (ja) * 1998-06-26 2000-01-14 Shinko Electric Ind Co Ltd 半導体チップ実装用回路基板のはんだバンプの電気特性検査及びコイニング方法
DE19841423C1 (de) * 1998-09-10 1999-12-30 Siemens Ag Strahlendetektor, insbesondere eines Computertomographen
DE10110203B4 (de) * 2001-03-02 2006-12-14 Infineon Technologies Ag Elektronisches Bauteil mit gestapelten Halbleiterchips und Verfahren zu seiner Herstellung
US6642524B2 (en) 2002-01-09 2003-11-04 Ge Medical Systems Global Technology Company, Llc Scintillator sealing for solid state X-ray detector
JP2005011838A (ja) * 2003-06-16 2005-01-13 Toshiba Corp 半導体装置及びその組立方法
DE10361521A1 (de) 2003-12-03 2005-07-07 Pac Tech - Packaging Technologies Gmbh Verfahren und Vorrichtung zur wechselseitigen Kontaktierung von zwei Wafern
US7075091B2 (en) * 2004-01-29 2006-07-11 Ge Medical Systems Global Technology Company, Llc Apparatus for detecting ionizing radiation
JP2005286166A (ja) 2004-03-30 2005-10-13 Nec Electronics Corp コイニング装置およびコイニング方法
KR100646599B1 (ko) * 2004-06-24 2006-11-23 포테나 옵틱스 코포레이션 단일 광케이블을 이용한 양방향 광 송수신 모듈
WO2006114716A2 (en) 2005-04-26 2006-11-02 Koninklijke Philips Electronics, N.V. Double decker detector for spectral ct
US7399972B2 (en) * 2005-06-09 2008-07-15 Nihon Kessho Kogaku Co., Ltd. Component for radiation detector and radiation detector
JP2009503489A (ja) 2005-07-25 2009-01-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電子的機能および流体機能をもつバイオ医療装置のための相互接続およびパッケージング方法
US7618849B2 (en) * 2007-10-22 2009-11-17 Broadcom Corporation Integrated circuit package with etched leadframe for package-on-package interconnects
WO2009083847A2 (en) * 2007-12-20 2009-07-09 Koninklijke Philips Electronics, N.V. Counting integrating detector
WO2010015951A1 (en) * 2008-08-04 2010-02-11 Koninklijke Philips Electronics N.V. Data acquisition
US8017902B2 (en) * 2008-12-12 2011-09-13 Infineon Technologies Ag Detector
US20100171206A1 (en) * 2009-01-07 2010-07-08 Chi-Chih Chu Package-on-Package Device, Semiconductor Package, and Method for Manufacturing The Same
US8373132B2 (en) * 2009-02-06 2013-02-12 Koninklijke Philips Electronics N. V. Radiation detector with a stack of scintillator elements and photodiode arrays
US8471154B1 (en) * 2009-08-06 2013-06-25 Amkor Technology, Inc. Stackable variable height via package and method
JP2011121070A (ja) 2009-12-08 2011-06-23 Hitachi Global Storage Technologies Netherlands Bv ヘッド・ジンバル・アセンブリの製造方法及びヘッド・ジンバル・アセンブリの接続パッドを相互接続する装置
JP5610520B2 (ja) * 2010-07-07 2014-10-22 日本結晶光学株式会社 放射線検出装置
US8466421B2 (en) * 2010-07-30 2013-06-18 Varian Medical Systems Inc. Radiation detector with multiple operating schemes
US8598709B2 (en) 2010-08-31 2013-12-03 Infineon Technologies Ag Method and system for routing electrical connections of semiconductor chips
US8373280B2 (en) * 2010-09-01 2013-02-12 Oracle America, Inc. Manufacturing fixture for a ramp-stack chip package using solder for coupling a ramp component
US9140808B2 (en) * 2011-02-03 2015-09-22 Koninklijke Philips N.V. Single or multi-energy vertical radiation sensitive detectors
US8258560B1 (en) 2011-02-15 2012-09-04 Aptina Imaging Corporation Image sensors with stacked photo-diodes
US8772920B2 (en) 2011-07-13 2014-07-08 Oracle International Corporation Interconnection and assembly of three-dimensional chip packages
US9599728B2 (en) * 2011-11-29 2017-03-21 Koninklijke Philips N.V. Scintillator pack comprising an X-ray absorbing encapsulation and X-ray detector array comprising such scintillator pack
JP6071041B2 (ja) * 2012-03-30 2017-02-01 日立金属株式会社 シンチレータアレイの製造方法及び放射線検出器の製造方法

Also Published As

Publication number Publication date
JP5966091B2 (ja) 2016-08-10
JP2015537194A (ja) 2015-12-24
EP3042395A1 (en) 2016-07-13
BR112015008750A2 (pt) 2017-07-04
US20160276387A1 (en) 2016-09-22
CN104603640B (zh) 2018-03-30
WO2015032865A1 (en) 2015-03-12
EP3042395B1 (en) 2017-03-08
CN104603640A (zh) 2015-05-06
US9748300B2 (en) 2017-08-29

Similar Documents

Publication Publication Date Title
RU2015104180A (ru) Элемент детектора излучения
US9835733B2 (en) Apparatus for detecting X-rays
US8516852B2 (en) Glass fusion method
RU2016123595A (ru) Детектор излучения с нагревательным устройством
MY172346A (en) Adhesive film and method for manufacturing semiconductor device
ATE400895T1 (de) Tieftemperatur-strahlungsbildaufnahmevorrichtun mit höcker-bondverbindung
TW201117406A (en) Semiconductor optical detecting element and method of manufacturing semiconductor optical detecting element
CN105702776B (zh) 一种自驱动光探测器及其制作方法
RU2015116526A (ru) Способ изготовления солнечного элемента
JP2015532711A5 (ru)
KR20190019745A (ko) 발광소자 및 그 제조방법
JP2015015227A5 (ja) Ｘ線発生管及びそれを用いたｘ線発生装置とｘ線撮影システム
CN109155261A (zh) 半导体装置的制造方法和制造装置
JP2016095916A5 (ru)
US10680034B2 (en) Imaging detector module assembly
TW201714691A (zh) 超音波焊接方法及超音波焊接裝置
JP2013211397A5 (ru)
Van Den Ende et al. Large area photonic flash soldering of thin chips on flex foils for flexible electronic systems: In situ temperature measurements and thermal modelling
TW201633774A (zh) 固體攝像裝置、相機模組及固體攝像裝置之製造方法
CN103207404A (zh) 通过直接转换半导体层来转换x射线辐射的方法和设备
JP2015529816A5 (ru)
TW201230210A (en) Connection structure of elements and connection method
TWI807052B (zh) 具有銀奈米粒子電極的圖像感測器
JP2020508560A (ja) 直接変換型化合物半導体検出器のレーザアシストはんだ接合
CN105304662A (zh) 一种背照式图像传感器晶圆、芯片及其制造方法

Legal Events

Date Code Title Description
FA93 Acknowledgement of application withdrawn (no request for examination)

Effective date: 20170905