RU2010146688A - METHOD FOR REFINING METALLURGIC SILICON BY PLASMA OF DRY ARGON WITH INJECTION OF WATER ON THE SURFACE OF THE MELT WITH THE FOLLOWING DIRECTED DIRECTIONAL CRYSTALLIZATION - Google Patents
METHOD FOR REFINING METALLURGIC SILICON BY PLASMA OF DRY ARGON WITH INJECTION OF WATER ON THE SURFACE OF THE MELT WITH THE FOLLOWING DIRECTED DIRECTIONAL CRYSTALLIZATION Download PDFInfo
- Publication number
- RU2010146688A RU2010146688A RU2010146688/05A RU2010146688A RU2010146688A RU 2010146688 A RU2010146688 A RU 2010146688A RU 2010146688/05 A RU2010146688/05 A RU 2010146688/05A RU 2010146688 A RU2010146688 A RU 2010146688A RU 2010146688 A RU2010146688 A RU 2010146688A
- Authority
- RU
- Russia
- Prior art keywords
- silicon
- melt
- plasma
- crucible
- dry argon
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract 13
- 239000010703 silicon Substances 0.000 title claims abstract 13
- 239000000155 melt Substances 0.000 title claims abstract 9
- 238000000034 method Methods 0.000 title claims abstract 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract 7
- 238000007713 directional crystallization Methods 0.000 title claims abstract 5
- 238000002347 injection Methods 0.000 title claims abstract 3
- 239000007924 injection Substances 0.000 title claims abstract 3
- 238000007670 refining Methods 0.000 title claims abstract 3
- 229910001868 water Inorganic materials 0.000 title claims abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract 8
- 229910052786 argon Inorganic materials 0.000 claims abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 4
- 238000002425 crystallisation Methods 0.000 claims abstract 2
- 230000008025 crystallization Effects 0.000 claims abstract 2
- 239000012153 distilled water Substances 0.000 claims abstract 2
- 239000011261 inert gas Substances 0.000 claims abstract 2
- 238000002844 melting Methods 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims abstract 2
- 230000003287 optical effect Effects 0.000 claims abstract 2
- 238000000746 purification Methods 0.000 claims abstract 2
- 239000010453 quartz Substances 0.000 claims abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 2
- 235000012431 wafers Nutrition 0.000 claims abstract 2
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- Silicon Compounds (AREA)
Abstract
Способ рафинирования металлургического кремния плазмой сухого аргона с инжекцией воды на поверхность расплава с последующей направленной кристаллизацией, заключающийся в разогреве в тигле неочищенного кремния до получения расплава и обработке расплава плазменным факелом, содержащим инертный газ и пары воды, отличающийся тем, что разогрев и плавление неочищенного кремния производят в вакууме с помощью резистивных нагревателей, при этом кремний помещают в кварцевый тигель прямоугольной формы, расплав кремния обрабатывают факелом плазмы сухого аргона с подачей на поверхность расплава дистиллированной воды под высоким давлением через сопло-форсунку, контроль температуры дна тигля осуществляют с помощью оптического пирометра, слиток поликристаллического кремния формируют методом контролируемой направленной кристаллизации, что позволяет более эффективно обрабатывать расплав кремния окислительно-восстановительной плазмой в вакууме, реализовать способ дополнительной очистки методом контролируемой направленной кристаллизации и получить по окончании процесса готовый к дальнейшему разделению на пластины, слиток поликристаллического кремния с требуемой степенью легирования. The method of refining metallurgical silicon with dry argon plasma with water injection onto the melt surface followed by directed crystallization, which consists in heating the crude silicon in a crucible to obtain a melt and treating the melt with a plasma torch containing an inert gas and water vapor, characterized in that heating and melting of the crude silicon produced in vacuum using resistive heaters, while silicon is placed in a rectangular quartz crucible, the silicon melt is treated with a plume dry argon coils with distilled water being fed to the melt surface under high pressure through a nozzle nozzle, the bottom temperature of the crucible is controlled using an optical pyrometer, a polycrystalline silicon ingot is formed by controlled directional crystallization, which allows more efficient processing of the silicon melt by redox plasma in vacuum , implement a method of additional purification by the method of controlled directional crystallization and obtain at the end of the process ready for further division into wafers, an ingot of polycrystalline silicon with the required degree of doping.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2010146688/05A RU2465199C2 (en) | 2010-11-17 | 2010-11-17 | Method of refining metallurgical silicon with dry argon plasma with injection of water onto melt surface with subsequent directed crystallisation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2010146688/05A RU2465199C2 (en) | 2010-11-17 | 2010-11-17 | Method of refining metallurgical silicon with dry argon plasma with injection of water onto melt surface with subsequent directed crystallisation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2010146688A true RU2010146688A (en) | 2012-05-27 |
| RU2465199C2 RU2465199C2 (en) | 2012-10-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2010146688/05A RU2465199C2 (en) | 2010-11-17 | 2010-11-17 | Method of refining metallurgical silicon with dry argon plasma with injection of water onto melt surface with subsequent directed crystallisation |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2465199C2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106283185A (en) * | 2016-08-09 | 2017-01-04 | 浙江恒都光电科技有限公司 | The preparation method of metallurgical grade high-efficiency polycrystalline silicon chip |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103952753B (en) * | 2014-04-16 | 2017-02-15 | 江苏盎华光伏工程技术研究中心有限公司 | Production method of polycrystalline silicon for solar battery |
| RU2648615C1 (en) * | 2017-01-31 | 2018-03-26 | Сергей Михайлович Карабанов | Method of plasmochemical metal refining in vacuum and plasmotron for its implementation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2159213C2 (en) * | 1999-02-25 | 2000-11-20 | Абдюханов Мансур Абдрахманович | Method of silicon purification and device for its embodiment |
| CN101671024B (en) * | 2009-09-15 | 2011-05-18 | 厦门大学 | Production technology and device for boron-removing and purification of polysilicon by adopting electromagnetic induction melting assisted with high-temperature plasma |
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2010
- 2010-11-17 RU RU2010146688/05A patent/RU2465199C2/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106283185A (en) * | 2016-08-09 | 2017-01-04 | 浙江恒都光电科技有限公司 | The preparation method of metallurgical grade high-efficiency polycrystalline silicon chip |
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| Publication number | Publication date |
|---|---|
| RU2465199C2 (en) | 2012-10-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20121118 |
|
| NF4A | Reinstatement of patent |
Effective date: 20150910 |
|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20161118 |