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RU2006130023A - METHOD FOR PRODUCING HIGH PURITY SILICON - Google Patents

METHOD FOR PRODUCING HIGH PURITY SILICON Download PDF

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Publication number
RU2006130023A
RU2006130023A RU2006130023/15A RU2006130023A RU2006130023A RU 2006130023 A RU2006130023 A RU 2006130023A RU 2006130023/15 A RU2006130023/15 A RU 2006130023/15A RU 2006130023 A RU2006130023 A RU 2006130023A RU 2006130023 A RU2006130023 A RU 2006130023A
Authority
RU
Russia
Prior art keywords
silicon
high purity
producing high
purity silicon
reducing agent
Prior art date
Application number
RU2006130023/15A
Other languages
Russian (ru)
Other versions
RU2327639C2 (en
Inventor
Юрий Георгиевич Колмогоров (RU)
Юрий Георгиевич Колмогоров
Александр Николаевич Антонов (RU)
Александр Николаевич Антонов
Валерий Давидович Афанасьев (RU)
Валерий Давидович Афанасьев
Борис Георгиевич Грибов (RU)
Борис Георгиевич Грибов
Константин Владимирович Зиновьев (RU)
Константин Владимирович Зиновьев
Original Assignee
Борис Георгиевич Грибов (RU)
Борис Георгиевич Грибов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Борис Георгиевич Грибов (RU), Борис Георгиевич Грибов filed Critical Борис Георгиевич Грибов (RU)
Priority to RU2006130023/15A priority Critical patent/RU2327639C2/en
Publication of RU2006130023A publication Critical patent/RU2006130023A/en
Application granted granted Critical
Publication of RU2327639C2 publication Critical patent/RU2327639C2/en

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Claims (1)

Способ получения кремния высокой чистоты, включающий введение в кремнийсодержащий расплав твердого диоксида кремния с образованием монооксида кремния и последующее восстановление монооксида кремния до элементарного кремния углеродным восстановителем, отличающийся тем, что в качестве кремнийсодержащего расплава используют диоксид кремния, в который вводят смесь порошков диоксида кремния с элементарным кремнием, взятых в стехиометрическом соотношении, а в качестве углеродного восстановителя используют метан.A method for producing high purity silicon, comprising introducing solid silicon dioxide into a silicon-containing melt to form silicon monoxide and then reducing silicon monoxide to elemental silicon with a carbon reducing agent, characterized in that silicon dioxide is used as a silicon-containing melt, into which a mixture of silicon dioxide and elemental powders is introduced silicon taken in a stoichiometric ratio, and methane is used as a carbon reducing agent.
RU2006130023/15A 2006-08-22 2006-08-22 Method of producing high purity silicon RU2327639C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2006130023/15A RU2327639C2 (en) 2006-08-22 2006-08-22 Method of producing high purity silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2006130023/15A RU2327639C2 (en) 2006-08-22 2006-08-22 Method of producing high purity silicon

Publications (2)

Publication Number Publication Date
RU2006130023A true RU2006130023A (en) 2008-02-27
RU2327639C2 RU2327639C2 (en) 2008-06-27

Family

ID=39278533

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2006130023/15A RU2327639C2 (en) 2006-08-22 2006-08-22 Method of producing high purity silicon

Country Status (1)

Country Link
RU (1) RU2327639C2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2367600C1 (en) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Method for preparation of high-purity silicon
RU2497753C1 (en) * 2012-06-28 2013-11-10 Борис Георгиевич Грибов Method of obtaining high purity silicon

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964172B2 (en) 2009-10-13 2011-06-21 Alexander Mukasyan Method of manufacturing high-surface-area silicon
RU2542274C1 (en) * 2013-08-20 2015-02-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Омский государственный технический университет" Method for preparing silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4457902A (en) * 1980-10-24 1984-07-03 Watson Keith R High efficiency hydrocarbon reduction of silica
RU2078034C1 (en) * 1993-01-19 1997-04-27 Научно-производственное объединение "Радиевый институт им.В.Г.Хлопина" Method for production of high-purity polycrystalline silicon
WO2006041271A1 (en) * 2004-10-12 2006-04-20 The Ministry Of Education And Sciences Of Republic Kazakhstan Republican State Enterprise 'center Of Chemical-Technological Researches' Method of production of pure silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2367600C1 (en) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Method for preparation of high-purity silicon
RU2497753C1 (en) * 2012-06-28 2013-11-10 Борис Георгиевич Грибов Method of obtaining high purity silicon

Also Published As

Publication number Publication date
RU2327639C2 (en) 2008-06-27

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20090823