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PT2351100T - Dispositivos nanoestruturados - Google Patents

Dispositivos nanoestruturados

Info

Publication number
PT2351100T
PT2351100T PT98264443T PT09826444T PT2351100T PT 2351100 T PT2351100 T PT 2351100T PT 98264443 T PT98264443 T PT 98264443T PT 09826444 T PT09826444 T PT 09826444T PT 2351100 T PT2351100 T PT 2351100T
Authority
PT
Portugal
Prior art keywords
nanostructured devices
nanostructured
devices
Prior art date
Application number
PT98264443T
Other languages
English (en)
Original Assignee
Bandgap Eng Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42170599&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PT2351100(T) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Bandgap Eng Inc filed Critical Bandgap Eng Inc
Publication of PT2351100T publication Critical patent/PT2351100T/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
PT98264443T 2008-11-14 2009-11-16 Dispositivos nanoestruturados PT2351100T (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11489608P 2008-11-14 2008-11-14
US15738609P 2009-03-04 2009-03-04
US25041809P 2009-10-09 2009-10-09

Publications (1)

Publication Number Publication Date
PT2351100T true PT2351100T (pt) 2020-04-21

Family

ID=42170599

Family Applications (1)

Application Number Title Priority Date Filing Date
PT98264443T PT2351100T (pt) 2008-11-14 2009-11-16 Dispositivos nanoestruturados

Country Status (12)

Country Link
US (4) US8450599B2 (pt)
EP (2) EP3664158A1 (pt)
JP (1) JP5612591B2 (pt)
KR (1) KR20110098910A (pt)
CN (1) CN102282679B (pt)
AU (1) AU2009314576B2 (pt)
CA (1) CA2743743A1 (pt)
DE (1) DE20150280T1 (pt)
ES (2) ES2810301T1 (pt)
IL (1) IL212825A0 (pt)
PT (1) PT2351100T (pt)
WO (1) WO2010056352A2 (pt)

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US20120305076A1 (en) * 2008-05-19 2012-12-06 Tyler Sims Lens systems for solar energy solutions
US9299866B2 (en) * 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
JP5612591B2 (ja) * 2008-11-14 2014-10-22 バンドギャップ エンジニアリング， インコーポレイテッド ナノ構造デバイス
US11996550B2 (en) 2009-05-07 2024-05-28 Amprius Technologies, Inc. Template electrode structures for depositing active materials
US20100285358A1 (en) 2009-05-07 2010-11-11 Amprius, Inc. Electrode Including Nanostructures for Rechargeable Cells
US20140370380A9 (en) * 2009-05-07 2014-12-18 Yi Cui Core-shell high capacity nanowires for battery electrodes
US8450012B2 (en) 2009-05-27 2013-05-28 Amprius, Inc. Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries
WO2011017173A2 (en) * 2009-07-28 2011-02-10 Bandgap Engineering Inc. Silicon nanowire arrays on an organic conductor
US8299655B2 (en) * 2010-01-04 2012-10-30 Scitech Associates Holdings, Inc. Method and apparatus for an optical frequency rectifier
US9780365B2 (en) 2010-03-03 2017-10-03 Amprius, Inc. High-capacity electrodes with active material coatings on multilayered nanostructured templates
US9172088B2 (en) 2010-05-24 2015-10-27 Amprius, Inc. Multidimensional electrochemically active structures for battery electrodes
JP5918150B2 (ja) 2010-03-03 2016-05-18 アンプリウス、インコーポレイテッド 活性材料を堆積させるためのテンプレート電極構造
TW201200465A (en) * 2010-06-29 2012-01-01 Univ Nat Central Nano/micro-structure and fabrication method thereof
WO2012067943A1 (en) 2010-11-15 2012-05-24 Amprius, Inc. Electrolytes for rechargeable batteries
US20130327384A1 (en) * 2011-03-16 2013-12-12 Honda Motor Co., Ltd. Multi-junction solar cell and manufacturing method therefor
JP6250538B2 (ja) 2011-07-01 2017-12-20 アンプリウス、インコーポレイテッド 電極および電極の製造方法
TW201302600A (zh) * 2011-07-04 2013-01-16 Univ Nat Taiwan Science Tech 矽奈米線陣列之製作方法
CN102694038B (zh) * 2012-01-16 2014-12-24 上海理工大学 基于双面金属包覆波导结构非晶硅太阳能电池及制造工艺
KR101438130B1 (ko) * 2013-03-08 2014-09-16 (주)애니캐스팅 집광형 태양전지모듈
KR101374272B1 (ko) * 2013-03-22 2014-03-13 연세대학교 산학협력단 미세 표면 구조를 갖는 고효율 광-열에너지 변환소자 및 그 제조방법
CN103681965A (zh) * 2013-12-03 2014-03-26 常州大学 柔性基底硅纳米线异质结太阳电池的制备方法
CN106663786B (zh) 2014-05-12 2020-06-16 安普瑞斯股份有限公司 硅在纳米线上的结构受控的沉积
CN104716209A (zh) * 2015-03-20 2015-06-17 黄河水电光伏产业技术有限公司 基于硅基纳米线的太阳能电池及其制备方法
KR102345543B1 (ko) * 2015-08-03 2021-12-30 삼성전자주식회사 펠리클 및 이를 포함하는 포토마스크 조립체
CN106918578B (zh) * 2015-12-24 2020-06-09 财团法人工业技术研究院 感测芯片
AT519922B1 (de) * 2017-05-11 2020-01-15 Univ Wien Tech SERS-Substrat
CN109671614B (zh) * 2017-08-10 2020-08-21 长江存储科技有限责任公司 一种晶圆键合方法
US11585807B2 (en) 2019-02-20 2023-02-21 Advanced Silicon Group, Inc. Nanotextured silicon biosensors
WO2020172564A1 (en) 2019-02-22 2020-08-27 Amprius, Inc. Compositionally modified silicon coatings for use in a lithium ion battery anode
US20230413603A1 (en) * 2020-10-29 2023-12-21 Oti Lumionics Inc. Opto-electronic device with nanoparticle deposited layers

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CN1958436A (zh) * 2006-10-17 2007-05-09 浙江大学 一种硅纳米线的制作方法
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KR100809248B1 (ko) 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법
JP5612591B2 (ja) * 2008-11-14 2014-10-22 バンドギャップ エンジニアリング， インコーポレイテッド ナノ構造デバイス
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Also Published As

Publication number Publication date
US8450599B2 (en) 2013-05-28
US20220223750A1 (en) 2022-07-14
US20100122725A1 (en) 2010-05-20
WO2010056352A2 (en) 2010-05-20
DE20150280T1 (de) 2021-04-15
ES2774714T3 (es) 2020-07-22
JP5612591B2 (ja) 2014-10-22
WO2010056352A3 (en) 2010-08-05
AU2009314576B2 (en) 2015-05-14
CA2743743A1 (en) 2010-05-20
AU2009314576A1 (en) 2010-05-20
JP2012508979A (ja) 2012-04-12
EP2351100B1 (en) 2020-01-08
US20130247966A1 (en) 2013-09-26
CN102282679B (zh) 2015-05-20
EP2351100A2 (en) 2011-08-03
EP3664158A1 (en) 2020-06-10
CN102282679A (zh) 2011-12-14
EP2351100A4 (en) 2016-05-11
KR20110098910A (ko) 2011-09-02
IL212825A0 (en) 2011-07-31
ES2810301T1 (es) 2021-03-08
US20180323321A1 (en) 2018-11-08

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