PL3481160T3 - Urządzenie w postaci źródła zasilania wysokiej częstotliwości i sposób sterowania urządzeniem w postaci źródła zasilania wysokiej częstotliwości - Google Patents
Urządzenie w postaci źródła zasilania wysokiej częstotliwości i sposób sterowania urządzeniem w postaci źródła zasilania wysokiej częstotliwościInfo
- Publication number
- PL3481160T3 PL3481160T3 PL16908208T PL16908208T PL3481160T3 PL 3481160 T3 PL3481160 T3 PL 3481160T3 PL 16908208 T PL16908208 T PL 16908208T PL 16908208 T PL16908208 T PL 16908208T PL 3481160 T3 PL3481160 T3 PL 3481160T3
- Authority
- PL
- Poland
- Prior art keywords
- power supply
- supply device
- frequency power
- control method
- frequency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/30—Time-delay networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016136058A JP6157036B1 (ja) | 2016-07-08 | 2016-07-08 | 高周波電源装置、及び高周波電源装置の制御方法 |
| EP16908208.8A EP3481160B1 (en) | 2016-07-08 | 2016-09-07 | High-frequency power supply device, and control method for high-frequency power supply device |
| PCT/JP2016/076299 WO2018008164A1 (ja) | 2016-07-08 | 2016-09-07 | 高周波電源装置、及び高周波電源装置の制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3481160T3 true PL3481160T3 (pl) | 2021-04-19 |
Family
ID=59273040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL16908208T PL3481160T3 (pl) | 2016-07-08 | 2016-09-07 | Urządzenie w postaci źródła zasilania wysokiej częstotliwości i sposób sterowania urządzeniem w postaci źródła zasilania wysokiej częstotliwości |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10475624B2 (pl) |
| EP (1) | EP3481160B1 (pl) |
| JP (1) | JP6157036B1 (pl) |
| KR (1) | KR101921457B1 (pl) |
| CN (1) | CN108476583B (pl) |
| PL (1) | PL3481160T3 (pl) |
| TW (1) | TWI643529B (pl) |
| WO (1) | WO2018008164A1 (pl) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6782360B2 (ja) * | 2017-06-28 | 2020-11-11 | 株式会社日立国際電気 | 高周波電源装置及びそれを用いたプラズマ処理装置 |
| JPWO2019103134A1 (ja) * | 2017-11-27 | 2021-03-25 | アダマンド並木精密宝石株式会社 | インピーダンス整合回路 |
| KR102126937B1 (ko) * | 2018-12-03 | 2020-06-25 | 주식회사 뉴파워 프라즈마 | 역방향 전력 저감 방법 및 이를 이용한 플라즈마 전력 장치 |
| JP2020158814A (ja) * | 2019-03-26 | 2020-10-01 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| CN114424319B (zh) | 2019-08-19 | 2024-04-30 | 应用材料公司 | 用于在多个频率下控制rf参数的方法及装置 |
| US10741363B1 (en) * | 2019-10-08 | 2020-08-11 | Mks Instruments, Inc. | Extremum seeking control apparatus and method for automatic frequency tuning for RF impedance matching |
| JP7485329B2 (ja) * | 2019-12-06 | 2024-05-16 | 学校法人 龍谷大学 | マイクロ波増幅回路とインピーダンス整合回路を有する回路、及びそれを用いたマイクロ波加熱装置 |
| US20220359160A1 (en) * | 2020-01-30 | 2022-11-10 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| DE102020104090A1 (de) * | 2020-02-17 | 2021-08-19 | Comet Ag | Hochfrequenzverstärker-Anordnung für einen Hochfrequenzgenerator |
| JP7733684B2 (ja) | 2020-07-08 | 2025-09-03 | ラム リサーチ コーポレーション | プラズマ処理システムの無線周波数供給システムからプロセス制御情報を抽出するためのシステムおよび方法 |
| WO2022025115A1 (ja) | 2020-07-30 | 2022-02-03 | ゼネラルソリューションズ株式会社 | 電磁波加熱装置 |
| DE102021129565A1 (de) * | 2021-11-12 | 2023-05-17 | TRUMPF Hüttinger GmbH + Co. KG | Verfahren und vorrichtung zum erhitzen eines mediums unter verwendung eines hf-signals |
| CA3233143A1 (en) * | 2021-11-16 | 2023-05-25 | Serge Duarte Pinto | Neutron source with heavy water moderation and applications to thermal neutron imaging |
| JPWO2023157431A1 (pl) * | 2022-02-16 | 2023-08-24 | ||
| EP4618135A1 (en) * | 2022-11-22 | 2025-09-17 | Tokyo Electron Limited | Plasma processing device, power supply system, and method for controlling source frequency |
| TWI842301B (zh) * | 2022-12-28 | 2024-05-11 | 瑞昱半導體股份有限公司 | 阻抗轉換電路和射頻功率可靠度測試系統 |
| CN116075031B (zh) * | 2023-02-13 | 2025-10-31 | 天津大学 | 一种基于反射系数测量的自动阻抗匹配系统及方法及应用 |
| CN117478164B (zh) * | 2023-12-22 | 2024-04-09 | 深圳市瀚强科技股份有限公司 | 射频保护电路及相关装置 |
| CN119920667B (zh) * | 2025-01-20 | 2025-10-28 | 青岛思锐智能科技股份有限公司 | 一种功率调节方法、装置、电子设备及存储介质 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
| JP4799947B2 (ja) * | 2005-02-25 | 2011-10-26 | 株式会社ダイヘン | 高周波電源装置および高周波電源の制御方法 |
| JP4739793B2 (ja) * | 2005-03-31 | 2011-08-03 | 株式会社ダイヘン | 高周波電源装置 |
| US7839223B2 (en) * | 2008-03-23 | 2010-11-23 | Advanced Energy Industries, Inc. | Method and apparatus for advanced frequency tuning |
| JP2010027587A (ja) | 2008-07-18 | 2010-02-04 | Kohnan Electronic Corp | 高周波応用装置 |
| WO2011016266A1 (ja) * | 2009-08-07 | 2011-02-10 | 株式会社京三製作所 | パルス変調高周波電力制御方法およびパルス変調高周波電源装置 |
| WO2012094416A1 (en) | 2011-01-04 | 2012-07-12 | Advanced Energy Industries, Inc. | System level power delivery to a plasma processing load |
| US8576013B2 (en) | 2011-12-29 | 2013-11-05 | Mks Instruments, Inc. | Power distortion-based servo control systems for frequency tuning RF power sources |
| GB2500708B (en) * | 2012-03-30 | 2016-04-13 | Nujira Ltd | Determination of envelope shaping and signal path predistortion of an ET amplification stage using device characterisation data |
| JP5534365B2 (ja) * | 2012-06-18 | 2014-06-25 | 株式会社京三製作所 | 高周波電力供給装置、及び反射波電力制御方法 |
| US8781415B1 (en) * | 2013-02-07 | 2014-07-15 | Mks Instruments, Inc. | Distortion correction based feedforward control systems and methods for radio frequency power sources |
| WO2015015771A1 (ja) * | 2013-07-31 | 2015-02-05 | パナソニック株式会社 | 無線電力伝送システムおよび送電装置 |
| CN103632927B (zh) | 2013-12-19 | 2016-03-16 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀系统的阻抗匹配方法 |
| CN105826154B (zh) * | 2015-01-06 | 2017-12-19 | 北京北方华创微电子装备有限公司 | 针对脉冲射频电源的阻抗匹配方法及装置 |
-
2016
- 2016-07-08 JP JP2016136058A patent/JP6157036B1/ja active Active
- 2016-09-07 US US16/314,967 patent/US10475624B2/en active Active
- 2016-09-07 KR KR1020187013981A patent/KR101921457B1/ko active Active
- 2016-09-07 PL PL16908208T patent/PL3481160T3/pl unknown
- 2016-09-07 EP EP16908208.8A patent/EP3481160B1/en active Active
- 2016-09-07 WO PCT/JP2016/076299 patent/WO2018008164A1/ja not_active Ceased
- 2016-09-07 CN CN201680072892.3A patent/CN108476583B/zh active Active
-
2017
- 2017-04-18 TW TW106112937A patent/TWI643529B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3481160B1 (en) | 2020-11-25 |
| WO2018008164A1 (ja) | 2018-01-11 |
| US10475624B2 (en) | 2019-11-12 |
| JP6157036B1 (ja) | 2017-07-05 |
| CN108476583A (zh) | 2018-08-31 |
| EP3481160A4 (en) | 2020-02-26 |
| KR20180067670A (ko) | 2018-06-20 |
| EP3481160A1 (en) | 2019-05-08 |
| CN108476583B (zh) | 2019-05-21 |
| KR101921457B1 (ko) | 2018-11-22 |
| TWI643529B (zh) | 2018-12-01 |
| TW201822594A (zh) | 2018-06-16 |
| JP2018006294A (ja) | 2018-01-11 |
| US20190311885A1 (en) | 2019-10-10 |
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