[go: up one dir, main page]

PL3333288T3 - TYGIEL Z SiC, METODA WYTWARZANIA TEGO TYGLA ORAZ METODA OTRZYMYWANIA MONOKRYSZTAŁU SiC - Google Patents

TYGIEL Z SiC, METODA WYTWARZANIA TEGO TYGLA ORAZ METODA OTRZYMYWANIA MONOKRYSZTAŁU SiC

Info

Publication number
PL3333288T3
PL3333288T3 PL16832815T PL16832815T PL3333288T3 PL 3333288 T3 PL3333288 T3 PL 3333288T3 PL 16832815 T PL16832815 T PL 16832815T PL 16832815 T PL16832815 T PL 16832815T PL 3333288 T3 PL3333288 T3 PL 3333288T3
Authority
PL
Poland
Prior art keywords
crucible
sic
making
single crystal
producing
Prior art date
Application number
PL16832815T
Other languages
English (en)
Inventor
Naofumi Shinya
Yu Hamaguchi
Norio Yamagata
Osamu Yamada
Takehisa Minowa
Original Assignee
Shin-Etsu Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Chemical Co., Ltd. filed Critical Shin-Etsu Chemical Co., Ltd.
Publication of PL3333288T3 publication Critical patent/PL3333288T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/575—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3817—Carbides
    • C04B2235/3826—Silicon carbides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/404—Refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/405—Iron group metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C04B2235/6585—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/723—Oxygen content

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
PL16832815T 2015-08-06 2016-07-25 TYGIEL Z SiC, METODA WYTWARZANIA TEGO TYGLA ORAZ METODA OTRZYMYWANIA MONOKRYSZTAŁU SiC PL3333288T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015156038A JP6533716B2 (ja) 2015-08-06 2015-08-06 ＳｉＣ単結晶の製造方法
EP16832815.1A EP3333288B1 (en) 2015-08-06 2016-07-25 Sic crucible, method of making the crucible and method of producing sic single crystal
PCT/JP2016/071673 WO2017022536A1 (ja) 2015-08-06 2016-07-25 ＳｉＣ坩堝およびＳｉＣ焼結体ならびにＳｉＣ単結晶の製造方法

Publications (1)

Publication Number Publication Date
PL3333288T3 true PL3333288T3 (pl) 2022-02-14

Family

ID=57942899

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16832815T PL3333288T3 (pl) 2015-08-06 2016-07-25 TYGIEL Z SiC, METODA WYTWARZANIA TEGO TYGLA ORAZ METODA OTRZYMYWANIA MONOKRYSZTAŁU SiC

Country Status (8)

Country Link
US (1) US11440849B2 (pl)
EP (1) EP3333288B1 (pl)
JP (1) JP6533716B2 (pl)
KR (2) KR102670781B1 (pl)
CN (1) CN107849733B (pl)
PL (1) PL3333288T3 (pl)
TW (1) TWI693205B (pl)
WO (1) WO2017022536A1 (pl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6533716B2 (ja) 2015-08-06 2019-06-19 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
JP2017031034A (ja) * 2015-08-06 2017-02-09 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
JP6784220B2 (ja) * 2017-04-14 2020-11-11 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
TWI647511B (zh) * 2018-03-07 2019-01-11 大立光電股份有限公司 攝像用光學鏡組、取像裝置及電子裝置
US11939511B2 (en) 2018-04-23 2024-03-26 Merck Patent Gmbh Liquid crystal mixture and liquid crystal display
CN108840682A (zh) * 2018-07-12 2018-11-20 佛山市高捷工业炉有限公司 一种高耐磨坩埚陶瓷材料
CN111676518A (zh) * 2020-08-05 2020-09-18 郑红军 碳化硅晶体生长用熔体装置
WO2022085360A1 (ja) * 2020-10-21 2022-04-28 国立大学法人東海国立大学機構 結晶成長装置
CN113322510B (zh) * 2021-05-27 2023-05-16 天津理工大学 SiC单晶生长装置及液相外延SiC单晶生长方法
EP4130347A1 (en) * 2021-08-05 2023-02-08 Shin-Etsu Chemical Co., Ltd. Method for producing sic single crystal
JP7552540B2 (ja) 2021-09-09 2024-09-18 信越化学工業株式会社 ＳｉＣ単結晶の製造方法、並びにＳｉＣ単結晶の転位を抑制する方法
CN114292129B (zh) * 2021-12-13 2023-03-14 天津理工大学 利用溶液法在石墨件表面沉积碳化硅涂层的方法
CN114395799A (zh) * 2022-01-29 2022-04-26 北京青禾晶元半导体科技有限责任公司 一种同时制造碳化硅单晶及碳化硅多晶的装置及方法
CN114318541A (zh) * 2022-03-07 2022-04-12 常州臻晶半导体有限公司 一种碳化硅晶体生长用输送装置
JP2023142835A (ja) * 2022-03-25 2023-10-05 Tdk株式会社 ルツボ、結晶製造方法、及び単結晶
CN115716755B (zh) * 2022-11-18 2023-09-05 上海大学 一种超高温陶瓷基复合材料及其制备方法
CN115821395A (zh) * 2022-12-19 2023-03-21 湖南三安半导体有限责任公司 一种碳化硅晶体的退火方法及其退火用的熔液
CN119328153B (zh) * 2024-10-25 2025-10-28 中国航发北京航空材料研究院 一种提高气雾化制粉用熔炼坩埚使用性能的方法

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3053635A (en) 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals
DE1208739B (de) 1963-12-17 1966-01-13 Ibm Deutschland Verfahren zum Ziehen von einkristallinem Siliziumkarbid
US4117057A (en) * 1975-06-25 1978-09-26 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Silicon carbide sintered moldings and a method for producing the same
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
JPH0784343B2 (ja) * 1986-07-09 1995-09-13 株式会社東芝 炭化珪素焼結体及びその製造方法
US4853299A (en) 1985-09-06 1989-08-01 Kabushiki Kaisha Toshiba Silicon carbide sintered body and method of manufacturing the same
JP2685370B2 (ja) * 1991-05-31 1997-12-03 シャープ株式会社 セラミックスヒータ
JP2630180B2 (ja) * 1992-07-24 1997-07-16 信越化学工業株式会社 半導体製造用炭化珪素質部材
JPH07172998A (ja) 1993-12-21 1995-07-11 Toshiba Corp 炭化ケイ素単結晶の製造方法
JPH08208336A (ja) * 1995-02-03 1996-08-13 Ngk Insulators Ltd 耐酸化性及び耐クリープ性を備えたＳｉ−ＳｉＣ質焼結体
JPH09221367A (ja) * 1996-02-15 1997-08-26 Chichibu Onoda Cement Corp 導電性炭化珪素質複合材料及びその製造方法
US6280496B1 (en) * 1998-09-14 2001-08-28 Sumitomo Electric Industries, Ltd. Silicon carbide based composite material and manufacturing method thereof
JP2000264790A (ja) 1999-03-17 2000-09-26 Hitachi Ltd 炭化珪素単結晶の製造方法
JP2001106600A (ja) * 1999-10-12 2001-04-17 Mitsubishi Cable Ind Ltd 炭化硅素結晶の液相成長方法
JP4260629B2 (ja) * 2001-10-16 2009-04-30 株式会社ブリヂストン 炭化ケイ素焼結体の製造方法
JP4100228B2 (ja) 2002-04-15 2008-06-11 住友金属工業株式会社 炭化珪素単結晶とその製造方法
JP4196791B2 (ja) 2003-09-08 2008-12-17 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
JP4934958B2 (ja) 2004-11-24 2012-05-23 住友金属工業株式会社 炭化珪素単結晶の製造方法
WO2006025420A1 (ja) 2004-09-03 2006-03-09 Sumitomo Metal Industries, Ltd. 炭化珪素単結晶の製造方法
JP2007126335A (ja) 2005-11-04 2007-05-24 Toyota Motor Corp 溶液法による炭化ケイ素単結晶の製造のための製造設備
JP2007197231A (ja) 2006-01-24 2007-08-09 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP4179331B2 (ja) 2006-04-07 2008-11-12 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5048266B2 (ja) * 2006-04-27 2012-10-17 株式会社アライドマテリアル 放熱基板とその製造方法
JP4853449B2 (ja) 2007-10-11 2012-01-11 住友金属工業株式会社 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス
JP4450074B2 (ja) 2008-01-15 2010-04-14 トヨタ自動車株式会社 炭化珪素単結晶の成長方法
JP4450075B2 (ja) * 2008-01-15 2010-04-14 トヨタ自動車株式会社 炭化珪素単結晶の成長方法
KR101003075B1 (ko) * 2008-04-15 2010-12-21 네오세미테크 주식회사 ＳｉＣ 단결정 성장방법 및 장치
CN102203330B (zh) 2008-08-29 2013-08-21 新日铁住金株式会社 碳化硅单晶的制造方法
KR101081598B1 (ko) * 2009-02-06 2011-11-08 동의대학교 산학협력단 종자정 처리 방법 및 단결정 성장 방법
KR101121001B1 (ko) * 2009-08-19 2012-03-05 에스케이씨솔믹스 주식회사 반응소결 탄화규소 소결체 접합용 접합제 및 이를 이용한 접합방법
CN102597337A (zh) 2009-08-27 2012-07-18 住友金属工业株式会社 SiC 单晶晶片及其制造方法
JP5359796B2 (ja) * 2009-11-05 2013-12-04 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5304600B2 (ja) 2009-11-09 2013-10-02 トヨタ自動車株式会社 ＳｉＣ単結晶の製造装置及び製造方法
JPWO2011145387A1 (ja) * 2010-05-21 2013-07-22 日本碍子株式会社 Ｓｉ−ＳｉＣ系複合材料及びその製造方法、ハニカム構造体、熱伝導体ならびに熱交換器
JP5434801B2 (ja) 2010-06-03 2014-03-05 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
KR101690490B1 (ko) 2010-10-21 2016-12-28 에스케이이노베이션 주식회사 탄화규소 단결정의 제조방법 및 장치
JP5355533B2 (ja) 2010-11-09 2013-11-27 新日鐵住金株式会社 ｎ型ＳｉＣ単結晶の製造方法
JP5273131B2 (ja) 2010-11-26 2013-08-28 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
JP5580764B2 (ja) 2011-03-03 2014-08-27 トヨタ自動車株式会社 ＳｉＣ単結晶製造装置
JP5528396B2 (ja) 2011-06-20 2014-06-25 新日鐵住金株式会社 溶液成長法によるＳｉＣ単結晶の製造装置、当該製造装置を用いたＳｉＣ単結晶の製造方法及び当該製造装置に用いられる坩堝
CN102260901A (zh) * 2011-06-29 2011-11-30 罗万前 含涂层的SiC复合坩埚及制备法
WO2013005347A1 (ja) 2011-07-04 2013-01-10 トヨタ自動車株式会社 SiC単結晶及びその製造方法
JP5803519B2 (ja) 2011-09-29 2015-11-04 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法及び製造装置
JP2013112553A (ja) 2011-11-28 2013-06-10 Nippon Steel & Sumitomo Metal Corp ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶の製造装置
KR101897020B1 (ko) * 2011-12-26 2018-09-12 엘지이노텍 주식회사 탄화규소 분말, 이의 제조 방법, 탄화규소 소결체 및 이의 제조 방법
TWI539039B (zh) * 2012-01-26 2016-06-21 希利柯爾材料股份有限公司 矽的純化方法
JP5888647B2 (ja) 2012-02-24 2016-03-22 国立研究開発法人産業技術総合研究所 結晶成長装置及び結晶成長方法
JP5839117B2 (ja) 2012-04-20 2016-01-06 トヨタ自動車株式会社 ＳｉＣ単結晶及びその製造方法
EP2881499B1 (en) 2013-12-06 2020-03-11 Shin-Etsu Chemical Co., Ltd. Method for growing silicon carbide crystal
JP6181534B2 (ja) * 2013-12-06 2017-08-16 信越化学工業株式会社 炭化珪素の結晶成長方法
JP6387641B2 (ja) * 2014-01-15 2018-09-12 セイコーエプソン株式会社 プロジェクター、表示装置、表示システムおよび表示装置の制御方法
JP6034917B2 (ja) 2015-04-23 2016-11-30 オリンパス株式会社 リアフォーカスレンズ系及びそれを備えた撮像装置
JP6533716B2 (ja) 2015-08-06 2019-06-19 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
JP2017031034A (ja) 2015-08-06 2017-02-09 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
CN112825270A (zh) 2019-11-20 2021-05-21 欧文乐有限责任公司 利用霍尔传感器的重量追踪装置及方法

Also Published As

Publication number Publication date
EP3333288A4 (en) 2019-01-30
CN107849733B (zh) 2023-03-31
JP6533716B2 (ja) 2019-06-19
JP2017031036A (ja) 2017-02-09
WO2017022536A1 (ja) 2017-02-09
EP3333288A1 (en) 2018-06-13
KR20230113829A (ko) 2023-08-01
TW201726581A (zh) 2017-08-01
EP3333288B1 (en) 2021-10-06
US20180257993A1 (en) 2018-09-13
CN107849733A (zh) 2018-03-27
US11440849B2 (en) 2022-09-13
KR20180036726A (ko) 2018-04-09
KR102670781B1 (ko) 2024-06-04
TWI693205B (zh) 2020-05-11

Similar Documents

Publication Publication Date Title
PL3333288T3 (pl) TYGIEL Z SiC, METODA WYTWARZANIA TEGO TYGLA ORAZ METODA OTRZYMYWANIA MONOKRYSZTAŁU SiC
IL289910B1 (en) A method for preparing allulose crystals
SG10201605089XA (en) POLYCRYSTALLINE SiC WAFER PRODUCING METHOD
EP3260582A4 (en) Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot
EP3228733A4 (en) Method for producing silicon carbide single crystal, and silicon carbide single crystal substrate
ZA201706885B (en) Crystalline germanosilicate materials of new cit-13 topology and methods of preparing the same
EP3276050A4 (en) Method for producing silicon carbide single crystal
GB201519128D0 (en) Solid forms and methods of preparing the same
SG11201708502PA (en) Graphene-based membrane and method of producing the same
PL3102503T3 (pl) Kartusz oraz sposób wytwarzania kartusza
EP3192898A4 (en) Method for producing silicon carbide crystals and crystal production device
EP3269711A4 (en) Stable apremilast crystal form ii free of solvates, and preparation method therefor
EP3333287A4 (en) METHOD FOR PRODUCING A SIC-EINKRISTALLS
TWI560328B (en) Heat-retaining fleece and method of producing the same
PL3309138T3 (pl) Sposób koprodukcji 2,3,3,3-tetrafluoropropylenu i 1,3,3,3-tetrafluoropropylenu
PL3029005T3 (pl) Wyrób ogniotrwały, zestaw do wytwarzania wyrobu, sposób wytwarzania wyrobu oraz zastosowanie wyrobu
SG11201706619YA (en) Monocrystalline diamonds and methods of growing the same
SG11201803485UA (en) Method for producing silazane-siloxane copolymers and the use of such copolymers
HUE064697T2 (hu) Eljárás fém-kerámia hordozók egyedi kódolására
PL3169345T3 (pl) Orytawancyna o wysokiej czystości i sposób jej wytwarzania
SG11201610266RA (en) Choux pastry and method for producing the same
IL287119A (en) Bryostatin compounds and methods for their preparation
PT3305770T (pt) Processo para a produção de forma cristalina de enzalutamida
PL3053902T3 (pl) Przedmiot ceramiczny i sposób jego wytwarzania
PL3351520T3 (pl) Sposób wytwarzania polikryształu diamentowego i polikryształ diamentowy