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PL2987876T3 - Bezołowiowy stop lutowniczy - Google Patents

Bezołowiowy stop lutowniczy

Info

Publication number
PL2987876T3
PL2987876T3 PL13882069T PL13882069T PL2987876T3 PL 2987876 T3 PL2987876 T3 PL 2987876T3 PL 13882069 T PL13882069 T PL 13882069T PL 13882069 T PL13882069 T PL 13882069T PL 2987876 T3 PL2987876 T3 PL 2987876T3
Authority
PL
Poland
Prior art keywords
lead
free solder
solder alloy
alloy
free
Prior art date
Application number
PL13882069T
Other languages
English (en)
Inventor
Ken Tachibana
Hikaru Nomura
Original Assignee
Senju Metal Industry Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senju Metal Industry Co filed Critical Senju Metal Industry Co
Publication of PL2987876T3 publication Critical patent/PL2987876T3/pl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H01L2924/011—Groups of the periodic table
    • H01L2924/01109—Metalloids or Semi-metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15701—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400 C

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  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Chemically Coating (AREA)
PL13882069T 2013-04-18 2013-04-18 Bezołowiowy stop lutowniczy PL2987876T3 (pl)

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EP13882069.1A EP2987876B1 (en) 2013-04-18 2013-04-18 Lead-free solder alloy
PCT/JP2013/061531 WO2014170994A1 (ja) 2013-04-18 2013-04-18 鉛フリーはんだ合金

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Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
JP6111952B2 (ja) * 2013-09-25 2017-04-12 日立金属株式会社 無鉛はんだ合金、接合材及び接合体
JP6755546B2 (ja) * 2016-08-09 2020-09-16 株式会社日本スペリア社 接合方法
EP3292943A1 (en) 2016-09-12 2018-03-14 Interflux Electronics N.V. Lead-free solder alloy comprising sn, bi and at least one of p, mn, cu, zn, sb and its use for soldering an electronic component to a substrate
CN107088716B (zh) * 2017-07-03 2020-01-24 中山翰华锡业有限公司 一种环保低温无残留锡膏及其制备方法
JP6477965B1 (ja) 2018-03-08 2019-03-06 千住金属工業株式会社 はんだ合金、はんだペースト、はんだボール、やに入りはんだおよびはんだ継手
CN112638574A (zh) * 2018-08-31 2021-04-09 铟泰公司 SnBi和SnIn焊锡合金
CN110961831B (zh) 2018-09-28 2022-08-19 株式会社田村制作所 成形软钎料及成形软钎料的制造方法
WO2020136979A1 (ja) * 2018-12-28 2020-07-02 Ｊｘ金属株式会社 はんだ接合部
BR112021020323B1 (pt) * 2019-04-11 2022-08-30 Nihon Superior Co., Ltd Liga de solda branca isenta de chumbo, e, parte de junta de solda branca
JP6810371B1 (ja) * 2019-05-27 2021-01-06 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、はんだ継手、および基板
JP7584438B2 (ja) * 2019-11-26 2024-11-15 千住金属工業株式会社 磁場溶融型はんだおよびそれを用いた接合方法
TWI771197B (zh) * 2021-09-29 2022-07-11 昇貿科技股份有限公司 低溫焊錫的焊接結構及其製造方法
CN114193020B (zh) * 2021-12-27 2023-05-09 山东康普锡威新材料科技有限公司 一种BiCuSnNiP系高温无铅焊料及其制备方法
CN115255710B (zh) * 2022-07-15 2024-04-26 郑州轻工业大学 一种含有Sn、Cu的高熵合金软钎料及其制备方法
JP7161140B1 (ja) 2022-07-22 2022-10-26 千住金属工業株式会社 はんだ合金、はんだボール、はんだペーストおよびはんだ継手

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184475B1 (en) * 1994-09-29 2001-02-06 Fujitsu Limited Lead-free solder composition with Bi, In and Sn
JPH1076389A (ja) * 1996-09-02 1998-03-24 Topy Ind Ltd 耐熱衝撃性と耐酸化性とを併有するはんだ
US6156132A (en) * 1998-02-05 2000-12-05 Fuji Electric Co., Ltd. Solder alloys
TW592872B (en) * 2001-06-28 2004-06-21 Senju Metal Industry Co Lead-free solder alloy
JP3682654B2 (ja) * 2002-09-25 2005-08-10 千住金属工業株式会社 無電解Ｎｉメッキ部分へのはんだ付け用はんだ合金
JP2004154864A (ja) * 2002-10-15 2004-06-03 Senju Metal Ind Co Ltd 鉛フリーはんだ合金
JP4811403B2 (ja) * 2005-06-10 2011-11-09 千住金属工業株式会社 無電解Ｎｉめっき部のはんだ付け方法
EP2017031B1 (en) * 2006-04-26 2017-09-13 Senju Metal Industry Co., Ltd Solder paste
JP5411503B2 (ja) * 2006-08-28 2014-02-12 パナソニック株式会社 熱硬化性樹脂組成物及びその製造方法並びに回路基板
EP2277657B1 (en) * 2008-04-23 2012-07-11 Senju Metal Industry Co., Ltd Lead-free solder
JP5245568B2 (ja) * 2008-06-23 2013-07-24 新日鉄住金マテリアルズ株式会社 無鉛ハンダ合金、ハンダボール及びハンダバンプを有する電子部材
CN101392337B (zh) * 2008-10-31 2010-09-08 广州有色金属研究院 一种低熔点无铅焊料合金
JP2013000744A (ja) * 2011-06-10 2013-01-07 Nihon Superior Co Ltd 鉛フリーはんだ合金及び当該はんだを用いたはんだ接合部
MY186516A (en) * 2011-08-02 2021-07-23 Alpha Assembly Solutions Inc High impact toughness solder alloy

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EP2987876A4 (en) 2017-02-15
US20160074971A1 (en) 2016-03-17
CN110153588A (zh) 2019-08-23
JPWO2014170994A1 (ja) 2017-02-16
SG11201508575XA (en) 2015-11-27
KR101941831B1 (ko) 2019-01-23
KR20160075846A (ko) 2016-06-29
DK2987876T3 (en) 2019-01-21
PH12015502404B1 (en) 2019-10-04
PH12015502404A1 (en) 2016-02-22
TW201504447A (zh) 2015-02-01
EP2987876A1 (en) 2016-02-24
KR20150120535A (ko) 2015-10-27
CN105121677A (zh) 2015-12-02
JP5578301B1 (ja) 2014-08-27
ES2702152T3 (es) 2019-02-27
HRP20182112T1 (hr) 2019-02-22
EP2987876B1 (en) 2018-10-03
MY160989A (en) 2017-03-31
TWI618798B (zh) 2018-03-21
PT2987876T (pt) 2018-12-19
KR20180052784A (ko) 2018-05-18
WO2014170994A1 (ja) 2014-10-23

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