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PL2860152T3 - Sposób wytwarzania mikrostruktury do generowania powierzchniowych fal plazmonowych - Google Patents

Sposób wytwarzania mikrostruktury do generowania powierzchniowych fal plazmonowych

Info

Publication number
PL2860152T3
PL2860152T3 PL14182597T PL14182597T PL2860152T3 PL 2860152 T3 PL2860152 T3 PL 2860152T3 PL 14182597 T PL14182597 T PL 14182597T PL 14182597 T PL14182597 T PL 14182597T PL 2860152 T3 PL2860152 T3 PL 2860152T3
Authority
PL
Poland
Prior art keywords
plasmonna
waves
generating surface
make microstructure
microstructure
Prior art date
Application number
PL14182597T
Other languages
English (en)
Inventor
Cheng-Sheng Tsung
Shih-Hao Chuang
Original Assignee
Tsung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsung filed Critical Tsung
Publication of PL2860152T3 publication Critical patent/PL2860152T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/02—Mechanical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
PL14182597T 2013-10-09 2014-08-28 Sposób wytwarzania mikrostruktury do generowania powierzchniowych fal plazmonowych PL2860152T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102136489A TWI472059B (zh) 2013-10-09 2013-10-09 A method of forming a surface plasma using a microstructure

Publications (1)

Publication Number Publication Date
PL2860152T3 true PL2860152T3 (pl) 2017-09-29

Family

ID=51492816

Family Applications (1)

Application Number Title Priority Date Filing Date
PL14182597T PL2860152T3 (pl) 2013-10-09 2014-08-28 Sposób wytwarzania mikrostruktury do generowania powierzchniowych fal plazmonowych

Country Status (7)

Country Link
US (2) US9450154B2 (pl)
EP (1) EP2860152B1 (pl)
JP (1) JP6305873B2 (pl)
CN (1) CN104576873B (pl)
ES (1) ES2631178T3 (pl)
PL (1) PL2860152T3 (pl)
TW (1) TWI472059B (pl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581452B (zh) * 2014-10-24 2017-05-01 Nat Chunghsing Univ High light extraction rate of light-emitting diodes, conductive films, and conductive films The production method
CN108507678A (zh) * 2018-03-01 2018-09-07 东南大学 一种等离激元多谐振机制增强的可调超光谱探测芯片
CN113694241A (zh) * 2020-05-20 2021-11-26 宗成圣 一种除霾抑菌膜
WO2024229459A1 (en) * 2023-05-04 2024-11-07 University Of Central Florida Research Foundation, Inc. Method for forming radiation shield and related inorganic structural color paint pigments with different nanoparticle sizes and layer thicknesses
EP4657124A1 (en) * 2024-05-31 2025-12-03 Geeder company Limited Microstructure with high bonding strength and formation method thereof

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006078952A1 (en) * 2005-01-21 2006-07-27 University Of California Methods for fabricating a long-range ordered periodic array of nano-features, and articles comprising same
JP2006343650A (ja) * 2005-06-10 2006-12-21 Fuji Xerox Co Ltd 調光組成物、光学素子、及びその調光方法。
JP4794294B2 (ja) * 2005-12-19 2011-10-19 桜宮化学株式会社 無機酸化物構造体及びその製造方法
KR100742720B1 (ko) * 2006-06-07 2007-07-25 한양대학교 산학협력단 화학적 큐어링에 의한 나노입자의 제조방법
EP2050792B1 (en) * 2006-08-09 2013-11-20 DIC Corporation Metal nanoparticle dispersion and production process of the same
TWI363440B (en) 2007-11-01 2012-05-01 Univ Nat Taiwan Light-emitting device, light-emitting diode and method for forming a light-emitting device
GB2455991B (en) * 2007-12-28 2010-12-01 Hauzer Techno Coating Bv A method of giving an article a coloured appearance and an article having a coloured appearance
TWI395348B (zh) 2008-06-05 2013-05-01 Alps Electric Co Ltd Semiconductor light emitting element
WO2010054891A1 (en) * 2008-11-17 2010-05-20 Imec Solution processing method for forming electrical contacts of organic devices
JP5312146B2 (ja) * 2009-03-30 2013-10-09 ユー・ディー・シー アイルランド リミテッド 発光素子
US8223425B2 (en) * 2009-11-06 2012-07-17 Sharp Laboratories Of America, Inc. Plasmonic device tuned using physical modulation
US8895844B2 (en) * 2009-10-23 2014-11-25 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a plasmonic back reflector and method therefor
US9372283B2 (en) * 2009-11-13 2016-06-21 Babak NIKOOBAKHT Nanoengineered devices based on electro-optical modulation of the electrical and optical properties of plasmonic nanoparticles
US20120313129A1 (en) * 2009-11-27 2012-12-13 Osaka University Organic electroluminescent element, and method for manufacturing organic electroluminescent element
JP5731478B2 (ja) * 2010-03-19 2015-06-10 国立大学法人東京工業大学 細孔の中に金属ナノ粒子が担持されている多孔質構造を有する太陽電池
US20130098442A1 (en) * 2010-04-27 2013-04-25 Takao Ochiai Near field light-source two-dimensional array and process for producing the same, two-dimensional array-type localized surface plasmon resonator, solar cell, optical sensor, and biosensor
JP5667511B2 (ja) * 2011-05-23 2015-02-12 Ｊｘ日鉱日石エネルギー株式会社 光電変換素子
WO2012077756A1 (ja) * 2010-12-08 2012-06-14 公立大学法人大阪府立大学 金属ナノ粒子集積構造体を利用した被検出物質の検出装置および方法
JP2012132804A (ja) * 2010-12-22 2012-07-12 Kyoto Univ 光増強素子
CN102154010B (zh) * 2011-01-29 2014-08-06 陈哲艮 光增强光致发光材料及其制备方法和应用
EP2674744A1 (en) * 2011-02-09 2013-12-18 Nippon Steel & Sumikin Chemical Co., Ltd. Composite having metal microparticles dispersed therein and process for production thereof, and substrate capable of generating localized surface plasmon resonance
JP6085095B2 (ja) * 2011-03-31 2017-02-22 住友化学株式会社 光学素子
DE102011079063A1 (de) * 2011-07-13 2013-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zum Herstellen eines lichtemittierenden Bauelements
US9490148B2 (en) * 2012-09-27 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Adhesion promoter apparatus and method
KR20150018246A (ko) * 2013-08-09 2015-02-23 한국전자통신연구원 유기발광 다이오드 및 이의 제조 방법

Also Published As

Publication number Publication date
ES2631178T3 (es) 2017-08-29
US9450154B2 (en) 2016-09-20
JP6305873B2 (ja) 2018-04-04
JP2015076608A (ja) 2015-04-20
US20150228863A1 (en) 2015-08-13
EP2860152B1 (en) 2017-03-22
EP2860152A1 (en) 2015-04-15
TW201515258A (zh) 2015-04-16
CN104576873A (zh) 2015-04-29
US20150099321A1 (en) 2015-04-09
US9293659B2 (en) 2016-03-22
TWI472059B (zh) 2015-02-01
CN104576873B (zh) 2017-07-14

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