PL2492368T3 - Tarcza rozpylania jonowego w kształcie rury - Google Patents

Tarcza rozpylania jonowego w kształcie rury

Info

Publication number: PL2492368T3
Authority: PL; Poland
Prior art keywords: sputter target; tubular sputter; tubular; target; sputter
Prior art date: 2011-02-22

Application number

PL12000166T

Other languages

English (en)

Inventor

Christoph Simons

Martin Schlott

Josef Heindel

Carl-Christoph Stahr

Original Assignee

Materion Advanced Materials Germany Gmbh

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-02-22

Filing date

2012-01-12

Publication date

2021-08-02

2012-01-12 Application filed by Materion Advanced Materials Germany Gmbh filed Critical Materion Advanced Materials Germany Gmbh

2021-08-02 Publication of PL2492368T3 publication Critical patent/PL2492368T3/pl

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/123—Spraying molten metal
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12389—All metal or with adjacent metals having variation in thickness
- Y10T428/12396—Discontinuous surface component

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
Photovoltaic Devices (AREA)

PL12000166T 2011-02-22 2012-01-12 Tarcza rozpylania jonowego w kształcie rury PL2492368T3 (pl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE102011012034A DE102011012034A1 (de)	2011-02-22	2011-02-22	Rohrförmiges Sputtertarget
EP12000166.4A EP2492368B1 (de)	2011-02-22	2012-01-12	Rohrförmiges Sputtertarget

Publications (1)

Publication Number	Publication Date
PL2492368T3 true PL2492368T3 (pl)	2021-08-02

Family

ID=45507397

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PL12000166T PL2492368T3 (pl)	2011-02-22	2012-01-12	Tarcza rozpylania jonowego w kształcie rury

Country Status (8)

Country	Link
US (1)	US9334564B2 (pl)
EP (1)	EP2492368B1 (pl)
JP (1)	JP5777539B2 (pl)
KR (1)	KR20120096426A (pl)
CN (1)	CN102644053B (pl)
DE (1)	DE102011012034A1 (pl)
PL (1)	PL2492368T3 (pl)
TW (1)	TWI527923B (pl)

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JP5140169B2 (ja)	2011-03-01	2013-02-06	Ｊｘ日鉱日石金属株式会社	インジウムターゲット及びその製造方法
JP5026611B1 (ja)	2011-09-21	2012-09-12	Ｊｘ日鉱日石金属株式会社	積層構造体及びその製造方法
JP5074628B1 (ja) *	2012-01-05	2012-11-14	Ｊｘ日鉱日石金属株式会社	インジウム製スパッタリングターゲット及びその製造方法
WO2014030362A1 (ja) *	2012-08-22	2014-02-27	Jx日鉱日石金属株式会社	インジウム製円筒型スパッタリングターゲット及びその製造方法
US20140110245A1 (en) *	2012-10-18	2014-04-24	Primestar Solar, Inc.	Non-bonded rotatable targets and their methods of sputtering
TWI461556B (zh) *	2012-10-24	2014-11-21	Solar Applied Mat Tech Corp	四方晶結構之銦靶材
CN103789729A (zh) *	2012-10-31	2014-05-14	光洋应用材料科技股份有限公司	四方晶结构的铟靶材
JP5968808B2 (ja) *	2013-03-07	2016-08-10	Ｊｘ金属株式会社	インジウム製円筒形ターゲット部材及び円筒形ターゲット部材の製造方法
US9922807B2 (en) *	2013-07-08	2018-03-20	Jx Nippon Mining & Metals Corporation	Sputtering target and method for production thereof
JP6217295B2 (ja) *	2013-10-07	2017-10-25	三菱マテリアル株式会社	Ｉｎスパッタリングターゲット
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EP2947175A1 (en) *	2014-05-21	2015-11-25	Heraeus Deutschland GmbH & Co. KG	CuSn, CuZn and Cu2ZnSn sputter targets
EP3085809B1 (en) *	2015-04-20	2018-07-18	Materion Advanced Materials Germany GmbH	Process for preparing a tubular sputtering target
JP6456810B2 (ja) *	2015-12-11	2019-01-23	Ｊｘ金属株式会社	Ｉｎ−Ｃｕ合金スパッタリングターゲット及びその製造方法
JP2017141515A (ja) *	2017-03-17	2017-08-17	Ｊｘ金属株式会社	スパッタリングターゲット及び、それの製造方法
JP2019056161A (ja) *	2017-09-22	2019-04-11	三菱マテリアル株式会社	Ｉｎ合金スパッタリングターゲット及びＩｎ合金スパッタリングターゲットの製造方法
US11450516B2 (en)	2019-08-14	2022-09-20	Honeywell International Inc.	Large-grain tin sputtering target
CN112030119A (zh) *	2020-08-27	2020-12-04	苏州思菲科新材料科技有限公司	一种铟管靶及其制备方法

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DE102009015638A1 (de) *	2009-03-24	2010-09-30	Wieland Dental + Technik Gmbh & Co. Kg	Rohrförmiges Sputtertarget und Verfahren zu seiner Herstellung
US7785921B1 (en)	2009-04-13	2010-08-31	Miasole	Barrier for doped molybdenum targets
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JP4948634B2 (ja)	2010-09-01	2012-06-06	Ｊｘ日鉱日石金属株式会社	インジウムターゲット及びその製造方法
JP5254290B2 (ja)	2010-09-01	2013-08-07	Ｊｘ日鉱日石金属株式会社	インジウムターゲット及びその製造方法

2011
- 2011-02-22 DE DE102011012034A patent/DE102011012034A1/de not_active Withdrawn
2012
- 2012-01-12 EP EP12000166.4A patent/EP2492368B1/de active Active
- 2012-01-12 PL PL12000166T patent/PL2492368T3/pl unknown
- 2012-02-03 US US13/365,365 patent/US9334564B2/en active Active
- 2012-02-06 TW TW101103803A patent/TWI527923B/zh not_active IP Right Cessation
- 2012-02-17 KR KR1020120016571A patent/KR20120096426A/ko not_active Ceased
- 2012-02-21 CN CN201210041442.1A patent/CN102644053B/zh not_active Expired - Fee Related
- 2012-02-22 JP JP2012036109A patent/JP5777539B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP2492368A1 (de)	2012-08-29
TWI527923B (zh)	2016-04-01
JP5777539B2 (ja)	2015-09-09
DE102011012034A1 (de)	2012-08-23
EP2492368B1 (de)	2021-04-07
TW201237202A (en)	2012-09-16
CN102644053A (zh)	2012-08-22
CN102644053B (zh)	2016-04-20
JP2012172265A (ja)	2012-09-10
KR20120096426A (ko)	2012-08-30
US9334564B2 (en)	2016-05-10
US20120213917A1 (en)	2012-08-23

Publication	Publication Date	Title
PL2492368T3 (pl)	2021-08-02	Tarcza rozpylania jonowego w kształcie rury
LT2684880T (lt)	2018-04-25	Dispiropirolidino darinys
EP2707852A4 (en)	2015-09-23	FOLLOW-UP
GB2509634B (en)	2014-10-15	Maintaining multiple target copies
SG10201607223SA (en)	2016-10-28	High-purity copper-manganese-alloy sputtering target
IL228927A (en)	2016-12-29	Purpose of Copper Alloy Thesis - High-degree cleaning
IL223879A (en)	2015-06-30	Purpose of thesis with tantalum
IL223430A (en)	2016-03-31	Purpose of thesis with tantalum
EP2853617A4 (en)	2016-03-09	SPRAY TARGET
EP2687531A4 (en)	2014-07-02	TETRAHYDROCARBOLINE DERIVATIVE
GB2498088B (en)	2016-07-27	Weed control
EP2671353A4 (en)	2015-04-15	METHOD FOR ACHIEVING A TARGET DAMAGE QUOTE
SG11201407011UA (en)	2014-11-27	Sputtering target
GB2495388B (en)	2015-01-21	Target sensor
EP2740730A4 (en)	2015-04-15	DIBENZOOXEPINE DERIVATIVE
PL2671043T3 (pl)	2015-07-31	Pocisk znakujący
SG11201400327SA (en)	2014-06-27	Titanium target for sputtering
GB2489611B (en)	2014-11-19	Small missile
SG10201602898RA (en)	2016-05-30	Object tracking
PL2769002T3 (pl)	2016-03-31	Rurowy target
GB2494203B (en)	2015-04-15	Projectile
GB2489220B (en)	2018-02-07	Magnetron
GB201104118D0 (en)	2011-04-27	Novel target
GB201111419D0 (en)	2011-08-17	Molecular target
GB2488319B (en)	2014-08-06	Weapon