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LT3238277T - Saulės elementų gamybos būdas - Google Patents

Saulės elementų gamybos būdas

Info

Publication number
LT3238277T
LT3238277T LTEP15804483.4T LT15804483T LT3238277T LT 3238277 T LT3238277 T LT 3238277T LT 15804483 T LT15804483 T LT 15804483T LT 3238277 T LT3238277 T LT 3238277T
Authority
LT
Lithuania
Prior art keywords
manufacture
solar cells
solar
cells
Prior art date
Application number
LTEP15804483.4T
Other languages
English (en)
Inventor
Michael Pittroff
Thomas Schwarze
Original Assignee
Solvay Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solvay Sa filed Critical Solvay Sa
Publication of LT3238277T publication Critical patent/LT3238277T/lt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
LTEP15804483.4T 2014-12-22 2015-12-03 Saulės elementų gamybos būdas LT3238277T (lt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14199551.4A EP3038169A1 (en) 2014-12-22 2014-12-22 Process for the manufacture of solar cells
PCT/EP2015/078463 WO2016102165A1 (en) 2014-12-22 2015-12-03 Process for the manufacture of solar cells

Publications (1)

Publication Number Publication Date
LT3238277T true LT3238277T (lt) 2019-01-10

Family

ID=52130124

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEP15804483.4T LT3238277T (lt) 2014-12-22 2015-12-03 Saulės elementų gamybos būdas

Country Status (10)

Country Link
US (1) US20170345953A1 (lt)
EP (3) EP3038169A1 (lt)
JP (1) JP6740246B2 (lt)
KR (1) KR20170097734A (lt)
CN (1) CN107251235B (lt)
DE (1) DE202015009541U1 (lt)
LT (1) LT3238277T (lt)
SG (1) SG11201705095VA (lt)
TW (1) TWI676674B (lt)
WO (1) WO2016102165A1 (lt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017219312A1 (de) 2017-10-27 2019-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. 2-stufiger Trockenätzprozess zur Texturierung kristalliner Siliziumscheiben
DE102021200627A1 (de) 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249957A (en) 1979-05-30 1981-02-10 Taher Daud Copper doped polycrystalline silicon solar cell
ES2096008T3 (es) 1991-11-11 1997-03-01 Solar Gmbh Siemens Procedimiento para la generacion de estructuras de electrodos finas.
US5476553A (en) * 1994-02-18 1995-12-19 Ase Americas, Inc. Solar cell modules and method of making same
US6660643B1 (en) * 1999-03-03 2003-12-09 Rwe Schott Solar, Inc. Etching of semiconductor wafer edges
JP2006332427A (ja) * 2005-05-27 2006-12-07 Mitsubishi Electric Corp 光起電力装置の製造方法およびそれに用いるエッチング装置
JP2009508688A (ja) * 2005-09-20 2009-03-05 エア プロダクツ アンド ケミカルズ インコーポレイテッド 活性化反応性ガスを使用して基材を表面処理するための装置及び方法
MX2010008075A (es) 2008-01-23 2010-08-04 Solvay Fluor Gmbh Proceso para la fabricacion de celulas solares.
CN101478013A (zh) * 2008-12-30 2009-07-08 无锡尚德太阳能电力有限公司 一种反应离子刻蚀制备太阳电池硅片绒面的方法以及用该方法制造的太阳电池
CN102007565A (zh) * 2009-03-17 2011-04-06 德国罗特·劳股份有限公司 基片处理系统和基片处理方法
JP2010245405A (ja) * 2009-04-08 2010-10-28 Sekisui Chem Co Ltd シリコンの表面粗化方法
JP5434970B2 (ja) * 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
CN103140918A (zh) * 2011-03-03 2013-06-05 松下电器产业株式会社 半导体基板的表面蚀刻装置、以及使用该表面蚀刻装置制造在表面形成有凹凸形状的半导体基板的方法
WO2012145473A1 (en) * 2011-04-21 2012-10-26 Linde Aktiengesellschaft Dry fluorine texturing of crystalline silicon surfaces for enhanced photovoltaic production efficiency
JP2013030531A (ja) * 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
CN102255002A (zh) * 2011-08-09 2011-11-23 陈必雄 用于太阳能电池晶硅材料的制绒方法
CN103594314B (zh) * 2012-08-17 2015-11-18 晶呈科技股份有限公司 具有多腔体的气相蚀刻设备
CN103000763B (zh) * 2012-11-29 2015-11-25 苏州阿特斯阳光电力科技有限公司 一种晶体硅太阳能电池的绒面结构及其制备方法
US20140213016A1 (en) * 2013-01-30 2014-07-31 Applied Materials, Inc. In situ silicon surface pre-clean for high performance passivation of silicon solar cells
JP2014204052A (ja) * 2013-04-09 2014-10-27 パナソニック株式会社 ノンプラズマドライエッチング装置

Also Published As

Publication number Publication date
CN107251235A (zh) 2017-10-13
DE202015009541U1 (de) 2018-03-13
TW201627474A (zh) 2016-08-01
US20170345953A1 (en) 2017-11-30
JP6740246B2 (ja) 2020-08-12
CN107251235B (zh) 2020-05-12
EP3238277A1 (en) 2017-11-01
EP3038169A1 (en) 2016-06-29
WO2016102165A1 (en) 2016-06-30
KR20170097734A (ko) 2017-08-28
JP2018503267A (ja) 2018-02-01
EP3467883A1 (en) 2019-04-10
SG11201705095VA (en) 2017-07-28
TWI676674B (zh) 2019-11-11
EP3238277B1 (en) 2018-09-26

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