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KR970053127A - Cleaning Method of Semiconductor Substrate - Google Patents

Cleaning Method of Semiconductor Substrate Download PDF

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Publication number
KR970053127A
KR970053127A KR1019950069591A KR19950069591A KR970053127A KR 970053127 A KR970053127 A KR 970053127A KR 1019950069591 A KR1019950069591 A KR 1019950069591A KR 19950069591 A KR19950069591 A KR 19950069591A KR 970053127 A KR970053127 A KR 970053127A
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KR
South Korea
Prior art keywords
semiconductor substrate
cleaning
aqueous solution
developer
ozone aqueous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019950069591A
Other languages
Korean (ko)
Inventor
이창석
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950069591A priority Critical patent/KR970053127A/en
Publication of KR970053127A publication Critical patent/KR970053127A/en
Ceased legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 기판의 세정방법에 관한 것으로, 포토 마스킹 작업에서 현상이 완료된 반도체 기판을 세정하는 방법에 있어서, 현상액이 존재하고 있는 반도체 기판상에 오존 수용액을 분사하여 계면 활성제 및 포토레지스트 성분 중에 함유되어 있는 (+)이온 존재하지 않게 되므로 (+)이온으로 인한 차지-업 현상 및 모빌 차지를 방지할 수 있다. 따라서 정확한 선폭 측정 및 형성으로 인한 소자의 신뢰성을 향상시킬 수 있고, 모빌 차지 제거로 인한 소자의 전기적 특성을 향상시킬 수 있으며, 또한 수율 증대를 도모할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor substrate, the method for cleaning a semiconductor substrate on which development has been completed in a photomasking operation, wherein an aqueous ozone solution is sprayed onto a semiconductor substrate on which a developer is present and contained in a surfactant and a photoresist component. Since no positive ions are present, charge-up and mobile charging due to positive ions can be prevented. Therefore, the reliability of the device due to accurate line width measurement and formation can be improved, the electrical characteristics of the device due to the removal of the mobile charge can be improved, and the yield can be increased.

Description

반도체 기판의 세정방법Cleaning Method of Semiconductor Substrate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (4)

포토 마스킹 작업에서 현상이 완료된 반도체 기판을 세정하는 방법에 있어서, 현상액이 존재하고 있는 반도체 기판상에 오존 수용액을 분사하여 계면 활성제 및 포토 레지스트 성분 중에 함유되어 있는 (+)이온을 제거하는 제1단계와, 순수를 분사하여 상기 현상액과 오존 수용액을 제거하는 제2단계와, 건조의 제3단계로 진행하는 것을 특징으로 하는 반도체 기판의 세정방법.A method of cleaning a semiconductor substrate having been developed in a photo masking operation, the method comprising: spraying an ozone aqueous solution onto a semiconductor substrate in which a developer is present to remove (+) ions contained in a surfactant and a photoresist component And a second step of removing the developer and the ozone aqueous solution by spraying pure water, and proceeding to a third step of drying. 제1항에 있어서, 상기 오존 수용액의 분사량은 5∼15cc 정도인 것을 특징으로 하는 반도체 기판의 세정방법.The method of cleaning a semiconductor substrate according to claim 1, wherein the injection amount of the ozone aqueous solution is about 5 to 15 cc. 제1항에 있어서, 상기 오존 수용액의 농도는 부피비의 5∼15% 정도로 하는 것을 특징으로 하는 반도체 기판의 세정방법.The method of cleaning a semiconductor substrate according to claim 1, wherein the concentration of said ozone aqueous solution is about 5 to 15% of the volume ratio. 제1항에 있어서, 오존 수용액과 현상액이 공존하여 정체하는 시간은 15∼25초인 것을 특징으로 하는 반도체 기판의 세정방법.The method of cleaning a semiconductor substrate according to claim 1, wherein the time when the ozone aqueous solution and the developer coexist and stagnate is 15 to 25 seconds. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950069591A 1995-12-30 1995-12-30 Cleaning Method of Semiconductor Substrate Ceased KR970053127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069591A KR970053127A (en) 1995-12-30 1995-12-30 Cleaning Method of Semiconductor Substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069591A KR970053127A (en) 1995-12-30 1995-12-30 Cleaning Method of Semiconductor Substrate

Publications (1)

Publication Number Publication Date
KR970053127A true KR970053127A (en) 1997-07-29

Family

ID=66638849

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950069591A Ceased KR970053127A (en) 1995-12-30 1995-12-30 Cleaning Method of Semiconductor Substrate

Country Status (1)

Country Link
KR (1) KR970053127A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010034087A (en) * 1998-11-13 2001-04-25 다니구찌 이찌로오 Method and device for removing photoresist film
KR100806476B1 (en) * 2001-10-23 2008-02-21 유겐가이샤 유에무에스 Apparatus for Removing Organic Films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010034087A (en) * 1998-11-13 2001-04-25 다니구찌 이찌로오 Method and device for removing photoresist film
KR100806476B1 (en) * 2001-10-23 2008-02-21 유겐가이샤 유에무에스 Apparatus for Removing Organic Films

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19951230

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Patent event date: 19960619

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19951230

Comment text: Patent Application

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Comment text: Notification of reason for refusal

Patent event code: PE06011S01I