KR970052758A - Dry etching method with gas stabilization step removed - Google Patents
Dry etching method with gas stabilization step removed Download PDFInfo
- Publication number
- KR970052758A KR970052758A KR1019950047217A KR19950047217A KR970052758A KR 970052758 A KR970052758 A KR 970052758A KR 1019950047217 A KR1019950047217 A KR 1019950047217A KR 19950047217 A KR19950047217 A KR 19950047217A KR 970052758 A KR970052758 A KR 970052758A
- Authority
- KR
- South Korea
- Prior art keywords
- dry etching
- gas
- gas flow
- stabilization
- flow stabilization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
본 발명은 반도체 제조공정의 드라이 에칭에 있어서, 공정 프로그램상에 가스 플로우 안정화 단계(GAS FLOW STABILIZATION)의 적용을 배제하는 것으로, 특히 브릿지(BRIDGE)및 파티클(PATICLE)성 디펙트(DEFECT)불량의 제거와 가스 응결(GAS CONDENSATION)의 저하를 위하여 프로세서 레시피 프로그램(PROCESS RECIPE PROGRAM)상에서 가스 플로우 안정화 단계(시간)의 인위적인 적용을 배제한 가스 안정화 단계가 제거된 드라이 에칭방법에 관한 것으로 반도체 웨이퍼의 드라이 에칭에 있어서, 상기 드라이 에칭공정 진행상에서 가스 플로우 안정화 단계가 배제되며, R,F파워 온 단계가 완료된 후 N2퍼지 단계가 추가로 구비되고, 상기 드라이 에칭 공정의 진행에 따라 가스 흐름의 세팅 값이 적정렌지의 범위내에 도달하면 해당단계에서 자동적으로 R,F파워 켜질 수 있도록 공정 진행상의 가스 턴-온시에 가스 플로우 안정화 시간이 구비됨을 특징으로 하는 가스 안정화 단계가 제거된 드라이 에칭방법.The present invention excludes the application of a gas flow stabilization step (GAS FLOW STABILIZATION) to a process program in dry etching of a semiconductor manufacturing process, and in particular, bridges and particle defect defects. A dry etching method in which a gas etching step is eliminated without the artificial application of a gas flow stabilization step (time) on a processor recipe program for removal and reduction of gas condensation. In the dry etching process, the gas flow stabilization step is excluded, and after the R and F power-on steps are completed, an N 2 purge step is further provided, and the setting value of the gas flow is increased according to the dry etching process. When the range is reached, the R and F power can be turned on automatically at the relevant stage. The gas turned the dry etching process is a gas phase, characterized in that the stabilization provided with a gas flow stabilization time remove turns on.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950047217A KR970052758A (en) | 1995-12-06 | 1995-12-06 | Dry etching method with gas stabilization step removed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950047217A KR970052758A (en) | 1995-12-06 | 1995-12-06 | Dry etching method with gas stabilization step removed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970052758A true KR970052758A (en) | 1997-07-29 |
Family
ID=66593034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950047217A Withdrawn KR970052758A (en) | 1995-12-06 | 1995-12-06 | Dry etching method with gas stabilization step removed |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970052758A (en) |
-
1995
- 1995-12-06 KR KR1019950047217A patent/KR970052758A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR970077252A (en) | Developing Method | |
| WO2002049078A3 (en) | Method for cleaning post-etch residues from a substrate | |
| KR970066727A (en) | Photoresist removal method | |
| KR970052758A (en) | Dry etching method with gas stabilization step removed | |
| KR950021200A (en) | How to remove photoresist | |
| JPS5587435A (en) | Method of producing semiconductor device | |
| US6372658B1 (en) | Reducing contamination induced scumming, for semiconductor device, by ashing | |
| US6309804B1 (en) | Reducing contamination induced scumming, for semiconductor device, by acid treatment | |
| JPS6413730A (en) | Lift-off flatting method | |
| KR940027089A (en) | Spin-on-glass film edge bead removal | |
| KR970048911A (en) | How to form a mask pattern | |
| KR950025901A (en) | How to remove photoresist | |
| KR960026290A (en) | Plasma Dry Etching Method | |
| DK1192050T3 (en) | Substrate treatment method | |
| KR100520501B1 (en) | A supply device for semiconductor patterning solution and its operating method | |
| KR100466968B1 (en) | Wafer Fixing Device of Semiconductor Process Chamber | |
| KR950027984A (en) | How to remove photoresist | |
| KR940020470A (en) | Edge Grow Removal Method of Semiconductor Devices | |
| KR970067658A (en) | Semiconductor photoresist ashing method | |
| KR19980039932A (en) | Method for regenerating semiconductor wafers | |
| KR970070240A (en) | Etching method to prevent particle defects of wafers | |
| KR970077268A (en) | Method of surface treatment of pattern | |
| KR970019544A (en) | Air gap formation method of optical path control device | |
| KR980006317A (en) | Manufacturing method of semiconductor device | |
| KR960018767A (en) | Semiconductor Wafer Exposure Method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19951206 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |