[go: up one dir, main page]

KR970005168B1 - 청색 반도체 레이저 다이오드 - Google Patents

청색 반도체 레이저 다이오드 Download PDF

Info

Publication number
KR970005168B1
KR970005168B1 KR1019930000890A KR930000890A KR970005168B1 KR 970005168 B1 KR970005168 B1 KR 970005168B1 KR 1019930000890 A KR1019930000890 A KR 1019930000890A KR 930000890 A KR930000890 A KR 930000890A KR 970005168 B1 KR970005168 B1 KR 970005168B1
Authority
KR
South Korea
Prior art keywords
layer
laser diode
quantum well
semiconductor laser
blue semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930000890A
Other languages
English (en)
Other versions
KR940019019A (ko
Inventor
안도열
Original Assignee
엘지전자 주식회사
이헌조
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사, 이헌조 filed Critical 엘지전자 주식회사
Priority to KR1019930000890A priority Critical patent/KR970005168B1/ko
Priority to US08/187,332 priority patent/US5377214A/en
Publication of KR940019019A publication Critical patent/KR940019019A/ko
Application granted granted Critical
Publication of KR970005168B1 publication Critical patent/KR970005168B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the Periodic Table than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용없음

Description

청색 반도체 레이저 다이오드
제1도는 종래의 청색 반도체 레이저 다이오드의 단면도.
제2도는 본 발명의 청색 반도체 레이저 다이오드의 단면도.
제3도는 본 발명의 레이저 다이오드의 발진파장을 나타낸 그래프.
제4도는 본 발명과 종래의 레이저 다이오드의 임계전류 밀도를 나타낸 그래프.
* 도면의 주요부분에 대한 부호의 설명
2,12 : 기판 3 : 버퍼층
4,13 : p형 ZnSe층 5 : 다중양자우물활성영역
6,17 : n형 전류제한층 15 : 활성층
8,19 : 캡층 7,18 : n형 ZnSe층
14,16 : 클래드층
본 발명은 청색 반도체 레이저 다이오드에 관한 것으로서, 특히 활성층을 텐셜-스트레인(Tensile-Strain)을 갖는 ZnSSe 양자우물로 구성하고, 클래드층을 ZnSe에 격자 정합한 MGZnSSe를 이용하여 임계전류밀도를 낮추고 발진파장을 짧게 할 수 있게 한것에 관할 것이다.
최근에 알려진 청록색 반도체 레이저 다이오드는 CdxZn1-XSe계의 활성층과, ZnSySe1-y계의 클래드층을 갖는 구조로서 제1도와 같이 양자 우물 레이저 다이오드가 알려져 있는데 이를 살펴 보기로 한다.
p형 GaAs 기판(12)위에 p형 ZnSe층(13)과, p형 ZnSySe1-y(단, y는 0≤y≤0.07)의 클래드층(14)과, 도핑되지 않은 두께로 수백Å이하의 Cdx Zn1-XSe(단, x는 0x0.25)의 활성층(15)과, n형 ZnSe층에(18) 위에 n형 ZnSySe1-y의 클래드층(16)과, n형 전류제한층(17) 및 n형 ZnSe층(18)을 연속으로 형성하고, 상기 n형 ZnSe캡층(19)을 형성하여서 양자우물 레이저 다이오드를 구성하여서 이루어진 것이다.
그러나 상기와 같은 종래의 양자 우물 레이저 다이오드는, 활성층 양자우물의 광이득이 ZnSe의 경우 아주 작기 때문에 이를 극복하기 위하여 활성층 격자 상수가 클래드층의 격자상부보다 커지도록 Cd를 소향(25% 이하) ZnSe에 첨가하여 광이득을 높인 구조를 사용하는데, 이는 바이액시알컴프레시브 스트레임을 활성층에 인가하기 위한 것이고 반면에 Cd가 첨가되면 실제로 상온에서 500nm이하로 레이저를 발진시킬 수 없는 문제점이 따르게 된다.
상기와 같은 종래의 문제점을 해결하기 위한 본 발명은 텐셜-스트레인을 갖는 양자우물 구조를 사용하여 레이저의 발진파장을 상온(500nm)이하로 줄일 수 있게 한 것이 목적을 둔 것이다.
상기와 같은 목적을 가진 본 발명은 활성층과 클래드층과의 에너지 간격을 유지하고 활성층의 원자간격이 클래드층의 원자간격보다 적게한 텐셜-스트레인을 갖도록 양자우물층을 형성하여 청록색 레이저를 단파장화한 것을 특징으로 한다.
이를 첨부한 본 발명의 실시예에 따른 도면 제2도에 따라서 설명하기로 한다.
p형 GaAs 기판(12)위에 p형 InxGa1-XA(단 x는 0.04 또는 0.05)의 버퍼층(3)과, p형 ZnSe층(4)과, ZnSySe1-y(0y0.2)을 형성층으로 하고 MgzZn1-zSwSe1-w를 장벽층으로 하는 다중양자우물 활성영역(5)과, n형 전류제한층(6) 및 n형 ZnSe층(7)을 순차적으로 형성하고, 상기 n형 ZnSe층(7)위에 n+형 ZnSe의 캡층(8)을 형성하고 상기 기판(2)과 캡(8)에 전극을 각각 형성하여서 된 구조로 이루어진 것이다.
상기에서 다중양자우물 활성영역의 장벽층의 MgzZn1-zSwSe1-w의 조성비 z와 w는 상기 화합물의 격자상수가 ZnSe의 격자상수와 같아지도록 조절한다. 이때 ZnSySe1-y의 격자상수는 항상 ZnSe보다 작으므로 양자우물에는 텐션스트레인이 인가된다.
또한 ZnSSe/MgZnSSe 양자우물 구조는 CdZnSe/ZnSSe 양자우물구조보다 활성층(양자우물)이 장벽층의 에너지간격이 더 크기 때문에 전자와 정공은 향상된 양자구속효과를 나타내게 되어 광이득의 증가에 기여하게 된다.
또한 양자우물 활성층의 ZnSSe는 CdZnSe에 비해서 에너지 캡이 크기 때문에 발진파장이 짧아진다.
상기와 같이 본 발명의 레이저 다이오드는 텐셜-스트레인이 인가된 양자우물에서 제3도와 같이 가전자대의 밴드구조는 변화에 의해 TM모드에서 광이득이 증가하고 TE모드 광이득은 감소하며, 밴드갭의 증가에 의해 발진파장은 짧아짐을 알수 있다.
또한 상기와 같은 본 발명의 레이저 다이오드는 향상된 광이득으로 인하여 제4도와 같이 상기 물리적크기를 갖는 종래의 CdZnSe반도체 레이저 다이오드에 비해서 본 발명의 ZnSSe 반도체 레이저 다이오드는 더 낮은 임계전류밀도에서 동작시킬 수 있게 된다.
이와같이 본 발명은 청색 반도체 레이저 다이오드의 발진파장을 매우 짧은 파장(500nm 이하)로 할 수 있게 되며, 발진개시 전류밀도의 낮은 임계전류밀도에서 동작시킬 수 있게 된 것이다.

Claims (3)

  1. GaAs 기판상에 버퍼층과 ZnSc층이 적층되고, 그위에 ZnSySe1-y을 활성층으로 하고 MgzZn1-zSwSe1-w을 장벽층으로 하는 다중양자우물 클래드 활성영역이 형성되며, 다중양자우물 활성영역 위에 전류제한층과 ZnSc층 및 캡층이 순차적층된 구조로 이루어짐을 특징으로 하는 청색 반도체 레이저 다이오드.
  2. 제1항에 있어서, 상기 다중양자우물 활성영역의 ZnSySe1-y활성층의 y는 0y0.2로 함을 특징으로 하는 청색 반도체 레이저 다이오드.
  3. 제1항에 있어서, 상기 다중양자우물 활성영역의 MgzZn1-zSwSe1-w의 장벽층은 z와 w는 상기 화합물의 격자상수가 ZnSe의 격자상수와 같도록 함을 특징으로 하는 청색 반도체 레이저 다이오드.
KR1019930000890A 1993-01-26 1993-01-26 청색 반도체 레이저 다이오드 Expired - Fee Related KR970005168B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019930000890A KR970005168B1 (ko) 1993-01-26 1993-01-26 청색 반도체 레이저 다이오드
US08/187,332 US5377214A (en) 1993-01-26 1994-01-26 Tensile strained blue green II-VI quantum well Laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930000890A KR970005168B1 (ko) 1993-01-26 1993-01-26 청색 반도체 레이저 다이오드

Publications (2)

Publication Number Publication Date
KR940019019A KR940019019A (ko) 1994-08-19
KR970005168B1 true KR970005168B1 (ko) 1997-04-12

Family

ID=19349946

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930000890A Expired - Fee Related KR970005168B1 (ko) 1993-01-26 1993-01-26 청색 반도체 레이저 다이오드

Country Status (2)

Country Link
US (1) US5377214A (ko)
KR (1) KR970005168B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
EP0619602A3 (en) * 1993-04-07 1995-01-25 Sony Corp Semiconductor device and manufacturing method.
JPH07142812A (ja) * 1993-11-16 1995-06-02 Sony Corp 半導体レーザー
DE10024924A1 (de) * 2000-05-19 2001-11-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement
JP3904947B2 (ja) * 2002-03-01 2007-04-11 三菱電機株式会社 光変調器
US20050141578A1 (en) * 2003-06-20 2005-06-30 Benoit Reid Laser diode structure with blocking layer
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5090790A (en) * 1990-06-29 1992-02-25 At&T Bell Laboratories Polarization-independent semiconductor waveguide
US5268918A (en) * 1991-02-21 1993-12-07 Sony Corporation Semiconductor laser
US5260958A (en) * 1991-12-31 1993-11-09 North American Philips Corporation Materials for II-VI lasers
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding

Also Published As

Publication number Publication date
KR940019019A (ko) 1994-08-19
US5377214A (en) 1994-12-27

Similar Documents

Publication Publication Date Title
US8592841B2 (en) Nitride semiconductor device
EP0605051B1 (en) Blue-green injection laser structure
EP0690516B1 (en) Semiconductor light emitting device
US5406574A (en) Semiconductor laser device
US5202895A (en) Semiconductor device having an active layer made of ingaalp material
US6768137B2 (en) Laminated semiconductor substrate and optical semiconductor element
KR970005168B1 (ko) 청색 반도체 레이저 다이오드
US5475700A (en) Laser diode with electron and hole confinement and barrier layers
US5586136A (en) Semiconductor laser device with a misoriented substrate
JP3056062B2 (ja) 半導体発光素子
JPH04266075A (ja) 半導体装置
JP2940644B2 (ja) 面形発光素子
JPH10321965A (ja) 半導体発光素子
US5670789A (en) Semiconductor light-emitting device with quantum well structure
JP3449751B2 (ja) 半導体発光素子
JPH0794822A (ja) 半導体発光素子
KR100302642B1 (ko) 반도체레이저
US5124995A (en) Semiconductor light-emitting device
EP0539161B1 (en) Semiconductor laser device
KR950008863B1 (ko) 반도체 레이저 다이오드
JPH07254755A (ja) 半導体発光素子
Valster et al. Strained (Al) GaInP quantum well visible light-emitting laser diodes
JP2005039140A (ja) 酸化物半導体レーザ素子
JPH07162087A (ja) 半導体レーザ素子
JPH06350198A (ja) 半導体発光素子

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20070629

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20080905

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20080905

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000