KR20230057904A - A semiconductor test apparatus with easy individual control of complex acceleration factors and test method using the same - Google Patents

Abstract

A semiconductor device inspection device is provided. The semiconductor device inspection device includes a housing, a mounting board accommodated in the housing and mounting a semiconductor device under test, accommodated in the housing and disposed adjacent to the mounting board, and conducting a test line with the semiconductor device under test. A heating unit for supplying, a test voltage supply unit accommodated in the housing and supplying a test voltage to the semiconductor device under test, and an ultra-high frequency supply unit for supplying a test microwave to the semiconductor device under test, wherein the heating unit supplies the test voltage. and performing an inspection of the semiconductor device under test in a state in which the test string, the test voltage supplied from the test voltage supply unit, and the test ultra-high frequency supplied from the microwave supply unit are applied.

Description

A semiconductor test apparatus with easy individual control of complex acceleration factors and test method using the same

The present application relates to a semiconductor inspection device and a semiconductor inspection method using the same, and more particularly, to a semiconductor inspection apparatus capable of easily individually controlling complex acceleration factors and a semiconductor inspection method using the same.

Semiconductor inspection equipment can be largely classified into Main Tester, Probe Station, Handler, and Burn-In equipment. , Component inspection equipment such as a handler that evaluates the normal operation of the package at the final stage after completing the pre- and post-processing of semiconductors, and module inspection equipment that inspects whether the module operates properly in a module state with multiple semiconductor elements mounted on the PCB. can do.

As semiconductor devices are miniaturized, various semiconductor inspection devices are being developed.

For example, Korean Registered Patent Publication No. 10-1679527 discloses a light generating unit generating light irradiated to a semiconductor device, which is a device to be inspected, and a test signal applying unit applying a test signal for driving the semiconductor device to the semiconductor device. , a photodetector that detects the reflected light reflected from the semiconductor device when the light is irradiated onto the semiconductor device and outputs a detection signal, and the detection signal is input and first phase information that is phase information of the detection signal a first spectrum analyzer that measures, a reference signal generator that generates a reference signal of a predetermined frequency, a second spectrum analyzer that receives the reference signal and measures second phase information that is phase information of the reference signal; and an analyzer for deriving phase information of the detection signal at the predetermined frequency based on the first phase information and the second phase information, wherein the first spectrum analyzer operates the first spectrum analyzer. Measuring the first phase information with respect to a frequency of a reference signal, the second spectrum analyzer measures the second phase information with respect to a frequency of a reference signal for operating the second spectrum analyzer, and A semiconductor device inspection apparatus in which the frequency and phase of a reference signal are synchronized with the frequency and phase of the reference signal of the second spectrum analyzer is disclosed.

One technical problem to be solved by the present application is a semiconductor device inspection device that can individually and easily control and apply complex acceleration factors such as temperature, voltage, digital signal, and ultra-high frequency signal to each semiconductor, and a semiconductor device using the same. It is to provide an inspection method.

Another technical problem to be solved by the present application is to provide a high-reliability semiconductor device inspection device and a semiconductor device inspection method using the same.

Another technical problem to be solved by the present application is to provide a semiconductor device inspection device capable of improving inspection speed by reducing inspection time and a semiconductor device inspection method using the same.

Another technical problem to be solved by the present application is to provide a semiconductor device inspection device capable of inspecting various semiconductor devices and a semiconductor device inspection method using the same.

Another technical problem to be solved by the present application is to provide a semiconductor device inspection device with improved inspection convenience and a semiconductor device inspection method using the same.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above technical problem, the present application provides a semiconductor device inspection device.

According to an embodiment, the semiconductor device inspection device may include a housing, a mounting board accommodated in the housing and mounting a semiconductor device under test, accommodated in the housing and disposed adjacent to the mounting board, and A heating unit for supplying test heat to a semiconductor device, a test voltage supply unit accommodated in the housing and supplying a test voltage to the semiconductor device under test, and an ultra-high frequency supply unit for supplying a test microwave to the semiconductor device under test, Testing the semiconductor device under test in a state in which the test column supplied by the heating unit, the test voltage supplied from the test voltage supply unit, and the test microwave supplied from the microwave supply unit are applied. can include

According to one embodiment, the heating unit includes a heating block having a hole therein, and a heater rod inserted into the hole of the heating block and generating the test heat,

According to an embodiment, the mounting board on which the semiconductor under test is mounted is disposed adjacent to an upper surface or a lower surface of the heating block, so that the semiconductor device under test heats the test heat generated from the heater rod. It may include being delivered through a block and the mounting board.

According to an embodiment, the heating unit is disposed on a bottom surface of the housing, and the mounting board on which the semiconductor device under test is mounted is disposed on an upper surface of the heating block of the heating unit, so that the fixing unit can perform the A mounting board may be fixed to an upper surface of the heating block.

According to an embodiment, the mounting board on which the semiconductor device under test is mounted may be disposed on a bottom surface of the housing, and the heating block of the heating part may be disposed on the semiconductor device under test.

According to an embodiment, a heat transfer pad may be provided between the heating block and the semiconductor device under test.

In order to solve the above technical problem, the present application provides a method for inspecting a semiconductor device.

According to an embodiment, the method of inspecting the semiconductor device may include applying a test voltage to a semiconductor device under test by a test voltage supply unit, applying a test ultra-high frequency to the semiconductor device under test by an ultra-high frequency supply unit, and applying a test ultra-high frequency to the semiconductor device under test by a heating unit. supplying test heat to a test semiconductor device, and performing an inspection on the semiconductor device under test in a state in which the test voltage, the test microwave, and the test heat are applied to the semiconductor device under test. can

According to an embodiment, the method of testing the semiconductor device may include, after testing the semiconductor device under test, terminating the application of the test voltage by the test voltage supply unit, and applying the test ultra-high frequency by the microwave supply unit. The method may further include terminating the test heat supply by the heating unit.

According to an embodiment, the test voltage, the test microwave, and the test column may include individually controlled by the test voltage supply unit, the microwave supply unit, and the heating unit, respectively.

An inspection apparatus for a semiconductor device according to an embodiment of the present application includes a housing, a mounting board accommodated in the housing and mounting a semiconductor device under test, accommodated in the housing and disposed adjacent to the mounting board, It may include a heating unit supplying test heat to the semiconductor device, a test voltage supply unit accommodated in the housing and supplying a test voltage to the semiconductor device under test, and an ultra-high frequency supply unit supplying a test microwave to the semiconductor device under test. there is.

In a state in which the test string, the test voltage, and the test microwave are applied, the semiconductor device under test may be inspected, and the test string, the test voltage, and the test microwave may be individually controlled. there is. Accordingly, the semiconductor device under test can be easily inspected in various acceleration environments.

1 is a diagram for explaining an inspection apparatus for a semiconductor device according to an exemplary embodiment of the present application.
2 is a diagram for explaining in detail a heating unit and a mounting board in a semiconductor device inspection device according to an exemplary embodiment of the present application.
3 is a view for explaining a disposition relationship between a semiconductor device under test and a heating unit according to the first embodiment in the semiconductor device inspection apparatus according to the exemplary embodiment of the present application.
4 is a view for explaining a disposition relationship between a semiconductor device under test and a heating unit according to a second embodiment in a semiconductor device inspection apparatus according to an exemplary embodiment of the present application.
5 is a view for explaining a disposition relationship between a semiconductor device under test and a heating unit according to a modified example of the second embodiment in the semiconductor device inspection device according to the exemplary embodiment of the present application.
6 is a flowchart illustrating a method of inspecting a semiconductor device according to an exemplary embodiment of the present application.
7 is a block diagram illustrating a semiconductor device inspection system according to an exemplary embodiment of the present application.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content will be thorough and complete, and the spirit of the present invention will be sufficiently conveyed to those skilled in the art.

In this specification, when an element is referred to as being on another element, it means that it may be directly formed on the other element or a third element may be interposed therebetween. Also, in the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content.

In addition, although terms such as first, second, and third are used to describe various elements in various embodiments of the present specification, these elements should not be limited by these terms. These terms are only used to distinguish one component from another. Therefore, what is referred to as a first element in one embodiment may be referred to as a second element in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiments. In addition, in this specification, 'and/or' is used to mean including at least one of the elements listed before and after.

In the specification, expressions in the singular number include plural expressions unless the context clearly dictates otherwise. In addition, the terms "comprise" or "having" are intended to designate that the features, numbers, steps, components, or combinations thereof described in the specification exist, but one or more other features, numbers, steps, or components. It should not be construed as excluding the possibility of the presence or addition of elements or combinations thereof. In addition, in this specification, "connection" is used to mean both indirectly and directly connecting a plurality of components.

In addition, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted.

In addition, it is obvious that the entity that manufactures and sells the semiconductor device inspection system described in the specification of the present application may be different from the entity that performs the semiconductor device inspection method described in the specification of the present application.

In addition, in the method claims described in chronological order, the order in which each step is performed is not simply limited to the described order, it is interpreted that the order is limited according to the implied technical meaning, and the order is not limited according to the implied technical meaning. The steps are to be construed as not limiting the order in which each step is performed.

1 is a diagram for explaining a semiconductor device inspection device according to an embodiment of the present application, and FIG. 2 is a diagram for explaining a heating unit and a mounting board in a semiconductor device inspection device according to an embodiment of the present application in more detail. it is a drawing

Referring to FIGS. 1 and 2 , an inspection apparatus for a semiconductor device according to an embodiment of the present application includes a housing 110, a mounting board 120, a heating unit 130, a test voltage supply unit 140, and a microwave supply unit. (not shown).

As shown in FIG. 1 , the housing 110 may have an internal space capable of accommodating various parts for testing the semiconductor device under test 122 therein.

Specifically, as shown in FIG. 1, the mounting board 120, the heating unit 130, and the test voltage supply unit 140 are disposed in the housing 110, and supplied from an external microwave supply unit. A connector 152 may be disposed to transfer the ultra-high frequency to the semiconductor under test 122 .

Also, as shown in FIG. 1 , the mounting board 120 and the heating unit 130 may be disposed in a space separate from the test voltage supply unit 140 . That is, the space within the housing 110 where the mounting board 120 and the heating unit 130 are disposed and the space within the housing 110 where the test voltage supply unit 140 is disposed are partitioned from each other by a partition wall. can

That is, according to an embodiment of the present application, the test voltage supply unit 140 and the heating unit 130 may be disposed in a separate space partitioned by a partition wall, and thus, the heating unit 130 generates The transfer of heat to the test voltage supply unit 140 is blocked, and deterioration of the test voltage supply unit 140 can be prevented.

The semiconductor device under test 122 may be mounted on the mounting board 120 . The semiconductor device under test 122 may be, for example, any one of a system semiconductor, a memory semiconductor, an RF semiconductor, and a communication system semiconductor.

The mounting board 120 on which the semiconductor device under test 122 is mounted may be fixedly disposed within the housing 110 as described above.

The heating unit 130 is accommodated in the housing 110 together with the mounting board 120, is disposed adjacent to the mounting board 120, and is disposed on the mounting board 120 to be tested. Test heat may be supplied to the semiconductor device 122 . Accordingly, the test heat supplied from the heating unit 130 does not leak out and can be shielded by the housing 110 . In addition, the test heat generated by the heating unit 130 may be quickly and easily transferred to the semiconductor device 122 under test.

As shown in FIG. 2, the heating unit 130 includes a heating block 132 having a hole therein, and a heater rod 134 inserted into the hole of the heating block 132 and generating the test heat. can include

According to an embodiment, the mounting board 120 on which the semiconductor device under test 122 is mounted may be fixedly coupled to one surface of the heating block 132 by a fixing part 120a. Accordingly, the test heat generated by the heater rod 134 may be transferred to the semiconductor device under test 122 through the heater block 132 and the mounting board 120 .

The test voltage supplier 140 may supply a test voltage to the semiconductor device under test 122 mounted on the mounting board 120 . As described above, the test voltage supply unit 140 may be accommodated in the housing 110 . For example, the test voltage may be a DC bias.

The microwave supply unit may supply test microwaves to the semiconductor device under test 122 mounted on the mounting board 120 . To supply the test microwave, a connector 152 connecting the microwave supply unit and the mounting board 120 may be provided in the housing 110 . Accordingly, the test ultra-high frequency supplied through the connector 152 may be shielded by the housing 110 without leaking to the outside.

According to the embodiment of the present application, the test column supplied by the heating unit 130, the test voltage supplied from the test voltage supply unit 140, and the test microwave supplied from the microwave supply unit are applied. At , inspection of the semiconductor device under test 122 may be performed. In this case, the temperature and application of the test heat may be controlled by the heating unit 130, and the magnitude, polarity, and application of the test voltage may be controlled by the test voltage supply unit 140. The frequency and application of the test ultra-high frequency may be controlled by the test ultra-high frequency. In other words, the test string, the test voltage, and the test ultra-high frequency may be individually controlled, and the semiconductor device under test 122 may be inspected while complexly applying various acceleration factors and individually controlling them. can That is, by easily implementing various acceleration conditions, the inspection of the semiconductor device under test 122 can be performed.

In addition, the test heat is easily supplied to the semiconductor device under test 122 with simplified equipment without a chamber for applying the test heat to the semiconductor device under test 122, thereby simplifying semiconductor inspection equipment, Inspection cost and inspection time can be saved.

Hereinafter, with reference to FIGS. 3 and 4 , an arrangement relationship between a heating unit and a semiconductor device under test according to an exemplary embodiment of the present application will be described in detail.

3 is a view for explaining a disposition relationship between a semiconductor device under test and a heating unit according to the first embodiment in the semiconductor device inspection apparatus according to the exemplary embodiment of the present application.

Referring to FIG. 3 , according to the first embodiment of the semiconductor device inspection apparatus according to the embodiment of the present application, the heating unit 130 including the heating block 132 and the heater rod 134 is on the The mounting board 120 on which the semiconductor device under test 122 is mounted may be disposed.

In other words, the mounting board 120 is disposed on the upper surface of the heating block 132 of the heating unit 130, and the mounting board 120 is held by the fixing part 120a to the heating block ( 132) can be fixedly coupled.

According to an embodiment, when a ground pad is provided on the lower surface of the semiconductor device under test 122, as shown in FIG. It can be placed on the heating block 132. Test heat generated by the heating unit 130 may be easily transferred to the semiconductor device under test 122 by the large ground pad provided on the lower surface of the semiconductor device under test 122 .

4 is a view for explaining a disposition relationship between a semiconductor device under test and a heating unit according to a second embodiment in a semiconductor device inspection apparatus according to an exemplary embodiment of the present application.

Referring to FIG. 4 , according to the second embodiment of the semiconductor device inspection apparatus according to the exemplary embodiment of the present application, below the heating unit 130 including the heating block 132 and the heater rod 134 The mounting board 120 on which the semiconductor device under test 122 is mounted may be disposed.

In other words, the mounting board 120 is disposed on the lower surface of the heating block 132 of the heating unit 130 so that the semiconductor element 122 mounted on the mounting board 120 is It can be in direct contact with the heating block 132.

According to an embodiment, when the semiconductor device under test 122 is packaged in a ball grid array method, as shown in FIG. 4 , the semiconductor device under test 122 is the heating unit ( 130) may be disposed below the heating block 132. When the semiconductor device under test 122 is packaged in a ball grid array method and the mounting board 120 is disposed on the heating block 132 as shown in FIG. 3 , the small area of the ball grid array Due to this, the test heat generated by the heating unit 130 may not be easily transferred to the semiconductor device under test 122 . Accordingly, when the semiconductor device under test 122 is packaged in a ball grid array method, the upper surface of the semiconductor device under test 122 can directly contact the heating block 132, as shown in FIG. 4 . Accordingly, the test heat generated by the heating unit 130 can be quickly and easily transferred to the semiconductor device 122 under test.

In conclusion, referring to FIGS. 3 and 4 , the arrangement of the semiconductor device under test 122 and the heating part 130 or the heating block 132 according to the packaging form of the semiconductor device under test 122 Relationships can be controlled.

In addition, a pusher 160 for applying pressure to an upper surface of the heating block 132 may be provided so that the heating block 132 and the semiconductor element 122 under test may directly contact each other. The pusher 160 may be provided through the housing 110, and a user may apply pressure to the heating block 132 using the pusher 160 so that the heating block 132 and the test object The semiconductor element 122 may be controlled to make contact.

5 is a view for explaining a disposition relationship between a semiconductor device under test and a heating unit according to a modified example of the second embodiment in the semiconductor device inspection device according to the exemplary embodiment of the present application.

Referring to FIG. 5 , in the second embodiment of the semiconductor device inspection apparatus according to the embodiment of the present application described with reference to FIG. 4 , heat is generated between the semiconductor device under test 122 and the heating block 132 . A transfer pad 124 may further be provided.

The heat transfer pad 124 may be made of a material having high thermal conductivity, and function so that the test heat generated in the heating block 132 can be easily transferred to the semiconductor device 122 under test. At the same time, the adhesive force between the semiconductor device under test 122 and the heating block 132 can be strengthened.

For example, the heat transfer pad 124 may be formed of metal, thermally conductive polymer, or the like.

Also, according to a modified example, an insulating pad may be additionally provided between the pusher 160 and the heating block 132 . Accordingly, transfer of the test heat generated by the heating block 132 to the pusher 160 can be minimized, and damage to a user using the pusher 160 due to the test heat can be minimized. there is.

Also, according to a modified example, one of the upper and lower surfaces of the heating block 132 may be defined as a heat transfer surface. In this case, in the implementation examples described with reference to FIGS. 3 to 5 , the heat transfer surface of the heating block 132 contacts the mounting board 120 or the top of the semiconductor device under test 122 It may contact a surface or contact the heat transfer pad 124 . For example, the heat transfer surface may be defined as a surface more adjacent to the heater rod 134 among upper and lower surfaces of the heating block 132 . That is, one of the upper and lower surfaces of the heating block 132 may be relatively close to the heater rod 134 and the other may be relatively far from the heater rod 134 . In this case, a surface relatively close to the heater rod 134 is defined as the heat transfer surface, and may come into contact with the semiconductor device under test 122, the mounting board 120, or the heat transfer pad 124. Therefore, the test heat generated by the heater rod 134 can be easily transferred to the semiconductor device under test 122 .

6 is a flowchart illustrating a method of inspecting a semiconductor device according to an exemplary embodiment of the present application.

Referring to FIG. 6 , a test voltage supplier applying a test voltage to the semiconductor device under test (S110), an ultra-high frequency supplier applying a test ultra-high frequency to the semiconductor device under test (S120), and a heating unit applying a test voltage to the semiconductor device under test (S120). Supplying test heat to a device (S130), and performing an inspection on the semiconductor device under test in a state in which the test voltage, the test microwave, and the test heat are applied to the semiconductor device under test (S140). ) can be performed sequentially.

The above-described inspection of the semiconductor device under test may be performed through the semiconductor device inspection device described with reference to FIGS. 1 to 5 and the semiconductor device inspection system described below with reference to FIG. 7 .

In addition, the step of applying the test voltage, the step of applying the test ultra-high frequency, and the step of supplying the test string may be sequentially performed.

That is, the test voltage may be applied to operate the semiconductor device under test, and then a test ultra-high frequency may be applied, and the normal operation of the semiconductor chip under test may be confirmed through the application of the test voltage and the test ultra-high frequency. Then, the test column may be supplied. Accordingly, when an error occurs in the semiconductor device under test or the semiconductor device under test abnormally operates, it is determined whether the error and abnormal operation of the semiconductor device under test are abnormalities in the semiconductor device under test or the test string. It can be judged whether

After applying the test voltage, it is possible to check the standby power value, and before applying the test voltage and applying the test ultra-high frequency, in order to attach the semiconductor device under test, MIPI, RFFE, SPU, etc. through FPGA It can be vectorized and applied.

In addition, after the test voltage, the test ultra-high frequency, and the test heat are applied, the test is performed while monitoring temperature, power, and the ultra-high frequency, etc., and after the test is finished, the test voltage supply unit controls the application of the test voltage. The step of terminating, the step of terminating the application of the test microwave by the microwave supply unit, and the step of terminating the supply of the test heat by the heating unit may be sequentially performed.

7 is a block diagram illustrating a semiconductor device inspection system according to an exemplary embodiment of the present application.

Referring to FIG. 7 , a semiconductor device inspection system according to an embodiment of the present application includes a semiconductor device under test 210, a temperature sensor unit 215, a first FPGA 220, a heating unit 230, and an ultra-high frequency supply unit. 240, a microwave receiver 250, a monitoring unit 260, a test voltage supply unit 270, a current voltage control and measurement unit 280, and a second FPGA 290.

FIG. 7 is a block diagram illustrating functions for implementing the semiconductor device inspection device and the semiconductor device inspection method using the device described with reference to FIGS. 1 to 6 .

The first FPGA 220 applies a digital signal for controlling and communicating with the semiconductor device under test 210, and I2C, SPI, UART, GPIO, Ethernet, MIPI RFFE can be used as a communication interface.

Also, the first FPGA 220 may apply a vector script-based digital signal. Specifically, a vector script based on the operating protocol of the semiconductor device under test 210 may be created, and the same vector may be re-accessed using a predefined command without repetition, thereby saving memory. Also, a vector script may be converted into a binary form through a compiler, and a digital signal may be generated based on the corresponding binary value and local data and applied to the semiconductor device 210 under test.

The heating unit 230 may apply test heat to the semiconductor device under test 210 under the temperature condition set by the user in the monitoring unit 260, and the temperature measured by the temperature sensor unit 215 and The heating unit 230 may be controlled by comparing the temperature set by the user.

The microwave supply unit 240 may apply test microwaves to the semiconductor device under test 210 . Specifically, the ultra-high frequency supply unit 240 applies Sub-6 / mmWave (ultra-high frequency) and may be manufactured with a PCB substrate having good thermal characteristics.

The semiconductor device under test 210 may be mounted on a mounting board, and the mounting board is composed of an assembly unit to test various system semiconductors, is connected to voltage, current, and temperature sensors, and is connected to the heating unit 230. may be placed adjacently.

The ultra-high frequency receiver 250 may connect an output corresponding to the test ultra-high frequency to a signal analyzer through an attenuator and transfer the output to the monitoring unit 260 .

The temperature sensor unit 215 may be disposed adjacent to the semiconductor device under test 210 to measure the temperature of the semiconductor device under test 210 and transmit the measured temperature to the second FPGA 290 .

The test voltage supply unit 270 configures a bias (power supply) circuit for operation of the semiconductor device under test 210, and can be manufactured to minimize heat transfer by designing a mechanism based on thermal analysis so as not to be affected by heat.

The current voltage control and measurement unit 280 measures voltage and current using ADC and AMP, ADC senses analog voltage, measures current value through ADC at 100mA level, and measures nA to several mA level. The low current value can be amplified through Amp, and the signal can be measured by the second FPGA 290. In addition, for overcurrent protection, overcurrent is prevented by applying HW/SW in a complex way, specifically, in terms of HW, a current exceeding a certain level is prevented from flowing using a FUSE, and in terms of SW, the second FPGA through the ADC ( 290) continuously monitors the current and controls the MOSFET when overcurrent flows, so that the operation can be controlled within a few ms.

The second FPGA 290 may transfer the voltage value measured by the ADC of the current voltage control and measurement unit 280 to the monitoring unit 260 through a communication interface.

The monitoring unit 260 may control and monitor acceleration factors (the test voltage, the test string, and the test ultrahigh frequency).

In the above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted according to the appended claims. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

110: housing
120: mounting board
122: semiconductor device under test
130: heating unit
132: heating block
134: heater rod
140: test voltage supply
152: connector
210: semiconductor device under test
215: temperature sensor unit
220: first FPGA
230: heating unit
240: ultra-high frequency supply unit
250: ultra-high frequency receiver
260: monitoring unit
270: test voltage supply
280: current voltage control and measurement unit 280
290: second FPGA

Claims (8)

housing;
a mounting board accommodated in the housing and on which a semiconductor device under test is mounted;
a heating unit accommodated in the housing and disposed adjacent to the mounting board to supply test heat to the semiconductor device under test;
a test voltage supply unit accommodated in the housing and supplying a test voltage to the semiconductor device under test; and
A microwave supply unit supplying a test microwave to the semiconductor device under test,
Testing the semiconductor device under test in a state in which the test column supplied by the heating unit, the test voltage supplied from the test voltage supply unit, and the test microwave supplied from the microwave supply unit are applied. Inspection device for a semiconductor device comprising:
According to claim 1,
the heating part,
Heating block with a hole inside; and
A heater rod inserted into the hole of the heating block and generating the test heat;
The mounting board on which the semiconductor under test is mounted is disposed adjacent to an upper or lower surface of the heating block, so that the semiconductor device under test transmits the test heat generated from the heater rod through the heating block and the mounting board. An inspection device for a semiconductor device comprising receiving a transfer through a device.
According to claim 2,
The heating unit is disposed on the bottom surface of the housing,
The mounting board on which the semiconductor device under test is mounted is disposed on an upper surface of the heating block of the heating unit, and the mounting board is fixed to the upper surface of the heating block by a fixing unit. Device.
According to claim 2,
The mounting board on which the semiconductor device under test is mounted is disposed on a bottom surface of the housing;
and the heating block of the heating unit is disposed on the semiconductor device under test.
According to claim 4,
and providing a heat transfer pad between the heating block and the semiconductor device under test.
applying a test voltage to a semiconductor device under test by a test voltage supply unit;
applying, by an ultra-high frequency supply unit, test ultra-high frequencies to the semiconductor device under test;
supplying test heat to the semiconductor device under test by a heating unit; and
and performing an inspection on the semiconductor device under test in a state in which the test voltage, the test ultra-high frequency, and the test heat are applied to the semiconductor device under test.
According to claim 6,
After the inspection of the semiconductor device under test is performed,
terminating the application of the test voltage by the test voltage supply unit;
Ending the application of the test ultra-high frequency by the ultra-high frequency supply unit; and
and terminating the supply of the test heat by the heating unit.
According to claim 6,
The test voltage, the test ultra-high frequency, and the test string are individually controlled by the test voltage supply unit, the microwave supply unit, and the heating unit, respectively.

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