KR20210011044A - Method for manufacturing light source apparatus - Google Patents

Abstract

[Problem] A method for manufacturing a light source device capable of suppressing oblique bonding of a light emitting device to a supporting substrate is provided.
[Solution means] A substrate having a front surface, a rear surface, an upper surface, a lower surface, a plurality of concave portions opening in the rear surface and a lower surface, a first wiring arranged in the front surface, and a second wiring arranged in the plurality of concave portions are provided. A process of preparing a light emitting device including a substrate having a substrate and a light emitting device mounted on the first wiring, and a support having a first wiring pattern including a bonding region on the upper surface of the supporting substrate and an insulating region surrounding the bonding region A process of preparing a substrate, a process of arranging the solder so that the volume of the solder on the insulating region is larger than the volume of the solder on the bonding region, and the process of separating the solder and the second wiring near the lower surface as viewed from the top view to create a light emitting device. A method of manufacturing a light source device including a step of mounting on a support substrate and a step of bonding a second wiring and a bonding region.

Description

Manufacturing method of light source device {METHOD FOR MANUFACTURING LIGHT SOURCE APPARATUS}

The present invention relates to a method of manufacturing a light source device.

A light-emitting diode is known that includes a substrate comprising a base portion in which an opening is provided and a mounting portion disposed on the base portion so as to close the opening, and an electrode exposed from the opening, and in which the electrode and the motherboard are electrically bonded to each other by solder. (See, for example, Patent Document 1).

Japanese Patent Laid-Open No. 2013-041865

An object of the present invention is to provide a method of manufacturing a light source device capable of suppressing oblique bonding of a light emitting device to a mother board (support substrate).

A method of manufacturing a light source device according to an aspect of the present invention includes a front extending in a long longitudinal direction and a short longitudinal direction orthogonal to the long longitudinal direction, a rear surface positioned on the opposite side of the front, and adjacent to the front And a base material having an upper surface orthogonal to the front surface, a lower surface positioned on the opposite side of the upper surface, a plurality of recesses opening to the rear surface and the lower surface, a first wiring disposed on the front surface, and the first Light emission comprising a substrate electrically connected to a wiring and having a second wiring disposed in each of the plurality of concave portions, and at least one light-emitting element electrically connected to the first wiring and mounted on the first wiring A process of preparing an apparatus, a process of preparing a support substrate having a support substrate, a wiring pattern including a bonding region on an upper surface of the support substrate, and an insulating region surrounding the bonding region, and on the insulating region A step of disposing solder on the bonding area and the insulating area so that the volume of the solder located on the bonding area is larger than the volume of the solder located on the bonding area, and in the vicinity of the solder and the bottom surface as viewed from a top view And a step of placing the light emitting device on the supporting substrate by separating the positioned second wiring, heating and melting the solder, and bonding the second wiring of the light emitting device with the bonding region of the supporting substrate. do.

According to the manufacturing method of the light source device according to the present invention, it is possible to provide a light source device capable of suppressing oblique bonding of the light emitting device to the support substrate.

[Fig. 1A] Fig. 1A is a schematic perspective view of a light emitting device according to Embodiment 1. [Fig.
1B is a schematic perspective view of a light emitting device according to the first embodiment.
2A is a schematic front view of a light emitting device according to the first embodiment.
[Fig. 2B] Fig. 2B is a schematic cross-sectional view taken along line I-I in Fig. 2A.
[Fig. 2C] Fig. 2C is a schematic cross-sectional view taken along line II-II in Fig. 2A.
[Fig. 3] Fig. 3 is a schematic bottom view of a light emitting device according to Embodiment 1. [Fig.
4A is a schematic rear view of a light emitting device according to the first embodiment.
4B is a schematic rear view of a modified example of the light emitting device according to the first embodiment.
5 is a schematic front view of the substrate according to the first embodiment.
6 is a schematic side view of the light emitting device according to the first embodiment.
7A is a schematic top view of a support substrate according to the first embodiment.
[Fig. 7B] Fig. 7B is a schematic cross-sectional view taken along line III-III in Fig. 7A.
8A is a schematic top view of a modification example of the support substrate according to the first embodiment.
[Fig. 8B] Fig. 8B is a schematic cross-sectional view taken along line IV-IV in Fig. 8A.
9A is a schematic top view illustrating a method of manufacturing a light source device according to the first embodiment.
[Fig. 9B] Fig. 9B is a schematic cross-sectional view taken along the line V-V in Fig. 9A.
9C is a schematic cross-sectional view illustrating a method of manufacturing a modified example of the light source device according to the first embodiment.
9D is a schematic top view illustrating a modified example of the manufacturing method of the light source device according to the first embodiment.
9E is a schematic top view illustrating a modified example of the manufacturing method of the light source device according to the first embodiment.
9F is a schematic top view illustrating a modified example of the manufacturing method of the light source device according to the first embodiment.
10A is a schematic top view illustrating a method of manufacturing a light source device according to the first embodiment.
[Fig. 10B] Fig. 10B is a schematic cross-sectional view taken along line VI-VI in Fig. 10A.
10C is a schematic cross-sectional view illustrating a method of manufacturing a modified example of the light source device according to the first embodiment.
11C is a schematic cross-sectional view illustrating a method of manufacturing the light source device according to the first embodiment.
12A is a schematic perspective view of a light emitting device according to the second embodiment.
12B is a schematic perspective view of a light emitting device according to the second embodiment.
13A is a schematic front view of a light emitting device according to the second embodiment.
[Fig. 13B] Fig. 13B is a schematic cross-sectional view taken along the line VII-VII in Fig. 13A.
14 is a schematic cross-sectional view of a modified example of the light emitting device according to the second embodiment.

Hereinafter, embodiments of the invention will be described appropriately with reference to the drawings. However, the light-emitting device described below is for embodiing the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. In addition, the contents described in one embodiment are applicable to other embodiments and modifications. Furthermore, the size and positional relationship of the members shown in the drawings are sometimes exaggerated in order to clarify the explanation.

<Embodiment 1>

A method of manufacturing a light source device according to Embodiment 1 of the present invention will be described based on FIGS. 1A to 11.

The manufacturing method of the light emitting device of Embodiment 1,

(1) The long longitudinal direction and the front extending in the short longitudinal direction orthogonal to the long longitudinal direction, the rear surface located on the opposite side of the front, the top surface adjacent to the front and perpendicular to the front, and located on the opposite side of the top surface A substrate having a lower surface, a plurality of concave portions opening to the rear and lower surfaces, a first wiring disposed on the front side, and a second wiring electrically connected to the first wiring and disposed in each of the plurality of concave portions; , A step of preparing a light-emitting device including at least one light-emitting element electrically connected to the first wiring and placed on the first wiring,

(2) a step of preparing a support substrate having a support substrate, a wiring pattern including a bonding region on an upper surface of the support substrate, and an insulating region surrounding the bonding region,

(3) a step of disposing solder on the bonding region and the insulating region so that the volume of the solder located on the insulating region is larger than the volume of the solder located on the bonding region;

(4) As seen from the top view, the step of placing the light emitting device on the supporting substrate by separating the solder and the second wiring located near the bottom surface;

(5) It includes a step of heating and melting solder, and bonding a bonding region between the second wiring of the light emitting device and the support substrate.

According to the manufacturing method of the light source device of the embodiment configured as described above, it is possible to suppress the formation of solder after heat dissolution between the lower surface of the substrate and the upper surface of the support substrate. Thereby, it is possible to suppress the light emitting device from being obliquely bonded to the support substrate.

(Process of preparing a light emitting device)

As shown in FIG. 2B, a light emitting device 1000 including a substrate 10 and at least one light emitting element 20 is prepared. The substrate 10 includes a substrate 11, a first wiring 12, and a second wiring 13. The substrate 11 includes a front surface 111 extending in a short longitudinal direction orthogonal to the long longitudinal direction and the long longitudinal direction, a rear surface 112 positioned on the opposite side of the front surface, and adjacent to the front surface and perpendicular to the front surface. It has an upper surface 113 and a lower surface 114 positioned on the opposite side of the upper surface. In addition, the base material 11 has a plurality of concave portions 16 that open to the rear surface 112 and the lower surface 114. The first wiring 12 is disposed on the front surface 111 of the substrate 11. The second wiring 13 is electrically connected to the first wiring 12 and is disposed in the plurality of recesses 16, respectively. In addition, in the present specification, orthogonality means that a variation of about 90±3° is allowed. In the present specification, the long longitudinal direction is referred to as the X direction, the short longitudinal direction is referred to as the Y direction, and the direction from the rear surface 112 to the front surface 111 is sometimes referred to as the Z direction.

The second wiring 13 of the substrate 10 and the bonding region that is a part of the wiring pattern of the support substrate are joined by solder. The light emitting device has a plurality of second wirings 13 by respectively disposing the second wirings in the plurality of concave portions. Since the light emitting device has a plurality of second wirings, the bonding strength between the light emitting device and the supporting substrate can be improved compared to the case where there is only one second wiring.

The depth of each of the plurality of concave portions 16 is not particularly limited, but as shown in Fig. 2C, the depth of each of the plurality of concave portions 16 in the Z direction is the depth of the concave portion on the upper surface 113 side. It is preferable that the depth W1 of the recess on the lower surface 114 side is deeper than W2. By doing in this way, in the Z direction, the thickness W5 of the base material 11 located on the upper surface 113 side of a recessed part can be made thicker than the thickness W6 of the base material located at the lower surface side of a recessed part. Thereby, a decrease in the strength of the substrate can be suppressed. In addition, by making the depth of the concave portion 16 in the Z direction deeper on the lower surface 114 side than on the upper surface 113 side, the opening of the concave portion 16 in the lower surface 114 of the base material 11 is The area can be increased. The lower surface 114 of the base material 11 and the upper surface of the support substrate face each other, and the light emitting device and the support substrate are joined by solder. By increasing the area of the opening of the concave portion on the lower surface of the substrate facing the support substrate, the area of the solder located on the lower surface 114 side of the substrate 11 can be increased. Thereby, the bonding strength between the light emitting device and the supporting substrate can be improved.

The concave portion 16 may pass through the base material, or may not pass through the base material 11 as shown in FIGS. 2B and 2C. Since the concave portion 16 does not penetrate the substrate, the strength of the substrate can be improved compared to the case where the concave portion penetrating the substrate is provided. When the concave portion 16 does not penetrate the substrate, it is preferable that the maximum depth of each of the plurality of concave portions in the Z direction is 0.4 times to 0.8 times the thickness W3 of the substrate. By making the depth of the concave portion deeper than 0.4 times the thickness of the substrate, the volume of the solder formed in the concave portion can be increased, so that the bonding strength between the light emitting device and the supporting substrate can be improved. By making the depth of the concave portion shallower than 0.8 times the thickness of the substrate, the strength of the substrate can be improved.

When viewed from the cross-sectional view, it is preferable that the concave portion 16 includes a parallel portion 161 extending in the Z direction. By providing the parallel portion 161, the volume of the concave portion 16 in the base material can be increased even if the area of the opening portion of the concave portion 16 in the rear surface 112 is the same. By increasing the volume of the concave portion 16, the amount of solder that can be formed in the concave portion can be increased, so that the bonding strength between the light emitting device 1000 and the supporting substrate can be improved. In addition, in the present specification, the term "parallel" means that a variation of about ±3° is allowed. Further, when viewed from the cross-sectional view, the concave portion 16 may include an inclined portion 162 that inclines from the lower surface 114 of the substrate in a direction in which the thickness of the substrate increases. The inclined portion 162 may be straight or curved. Since the inclined portion 162 becomes a straight line, formation is facilitated by a drill having a sharp tip. Incidentally, it is assumed that the straight line in the inclined portion 162 is allowed to fluctuate about ±3 µm.

As shown in Fig. 3, in the lower surface of the substrate, it is preferable that the depth R1 at the center of each of the plurality of concave portions 16 is the maximum depth of the concave portion in the Z direction. By doing in this way, since the thickness R2 of the base material in the Z direction can be made thick at the end of the recessed part in the X direction on the lower surface, the strength of the base material can be improved. In the present specification, it is assumed that a fluctuation of about ±5 μm in the center is allowed. The concave portion 16 can be formed by a known method such as a drill or a laser. In the lower surface, the concave portion having the maximum depth at the center can be easily formed by a drill having a sharp tip. Further, by using a drill, it is possible to form a concave portion having a substantially cylindrical shape in which the deepest portion has a substantially conical shape and continues from the circular shape of the substantially conical bottom surface. By cutting a part of the concave portion by dicing or the like, it is possible to form a concave portion having a substantially semi-cylindrical shape in which the deepest portion has a substantially semi-cylindrical shape and continues from a substantially semicircular shape. By doing in this way, as shown in FIG. 4A, in the rear surface, the opening shape of the recessed part 16 can be made into a substantially semicircular shape. Since the opening shape of the concave portion becomes a substantially semicircular shape without a corner portion, concentration of the stress applied to the concave portion can be suppressed, and thus the substrate can be prevented from cracking.

In the rear surface, the shape of each of the plurality of concave portions 16 may be different, and as shown in Fig. 4A, the shape of each of the plurality of concave portions 16 on the rear surface may be the same. When the shape of each of the plurality of concave portions is the same, formation of the concave portion becomes easier than when the shape of the concave portion is different. For example, in the case of forming the concave portion by the drilling method, the concave portion can be formed by a single drill if the shape of each of the plurality of concave portions is the same. In addition, in this specification, the same means that a variation of about ±5 μm is allowed.

As shown in Fig. 4A, it is preferable that each of the plurality of concave portions 16 on the rear surface is symmetrically positioned with respect to the center line C1 of the substrate parallel in the Y direction. In this way, when the light emitting device is bonded to the support substrate via solder, self-alignment works effectively, and the light emitting device can be mounted on the support substrate with high precision.

As shown in FIG. 2B, the substrate 10 may be provided with a third wiring 14 disposed on the rear surface 112 of the substrate 11. Moreover, the board|substrate 10 may be provided with the via 15 which electrically connects the 1st wiring 12 and the 3rd wiring 14. The via 15 is provided in a hole penetrating the front surface 111 and the rear surface 112 of the substrate 11. The via 15 includes a fourth wiring 151 covering the surface of the through hole of the substrate and a filling member 152 filled inside the fourth wiring 151. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152. In general, since the resin material before curing has higher fluidity than the metal material before curing, it is easy to fill the inside of the fourth wiring 151. For this reason, by using a resin material for the filling member, it becomes easy to manufacture the substrate. As a resin material which is easy to fill, an epoxy resin is mentioned, for example. When using a resin material as a filling member, it is preferable to contain an additive member in order to lower a linear expansion coefficient. By doing in this way, since the difference between the linear expansion coefficient of the 4th wiring and the linear expansion coefficient of a filling member becomes small, it can suppress that a gap arises between the 4th wiring and a filling member by heat from a light emitting element. As an additive member, silicon oxide is mentioned, for example. In addition, when a metal material is used for the filling member 152, heat dissipation can be improved.

As shown in Figs. 2B and 4A, the via 15 and the concave portion 16 may be in contact, and as in the light emitting device 1001 shown in Fig. 4B, the via 15 and the concave portion 16 are separated. do. Since the via 15 and the concave portion 16 contact each other, the fourth wiring 151 and the second wiring can contact each other, so that heat dissipation of the light emitting device can be improved. Since the via 15 and the concave portion 16 are separated from each other, the strength of the substrate can be improved compared to the case where the via 15 and the concave portion 16 are in contact with each other.

As shown in FIG. 2B, the light emitting element 20 is disposed on the first wiring 12. The light-emitting device 1000 should just include at least one light-emitting element 20. The light-emitting element 20 includes a mounting surface facing the substrate 10 and a light extraction surface 201 positioned on a side opposite to the mounting surface. The light-emitting element 20 includes at least a semiconductor laminate 23, and element electrodes 21 and 22 are provided in the semiconductor laminate 23. The light emitting element 20 may be flip-chip mounted on the substrate 10. This eliminates the need for a wire that supplies electricity to the element electrode of the light-emitting element, so that the light-emitting device can be downsized. When the light-emitting element 20 is flip-chip mounted, the electrode forming surface 203 on which the element electrodes 21 and 22 of the light-emitting element 20 are located, and the opposite side to the light extraction surface 201 . In addition, in this embodiment, the light emitting element 20 has the element substrate 24, but it is not necessary to have the element substrate 24. When the light-emitting element 20 is flip-chip mounted on the substrate 10, the element electrodes 21 and 22 of the light-emitting element are electrically connected to the first wiring 12 via a conductive adhesive member 60.

The light-emitting element 20 may have an electrode formation surface on which an element electrode is located, and a surface on the opposite side thereof to face the substrate. In this case, the electrode formation surface becomes the light extraction surface. The light-emitting device may include a wire for electrically bonding the element electrode of the light-emitting element and the first wiring to supply electricity to the light-emitting element.

When the light emitting element 20 is flip-chip mounted on the substrate 10, it is preferable that the first wiring 12 includes a convex portion 121 as shown in FIGS. 2B and 5. As viewed from the top view, the convex portions 121 of the first wiring 12 are positioned at positions overlapping the element electrodes 21 and 22 of the light emitting element 20. By doing in this way, when a soluble adhesive is used as the conductive adhesive member 60, when connecting the convex portions 121 of the first wiring and the element electrodes 21 and 22 of the light emitting element, light is emitted by the self-alignment effect. Alignment of the element and the substrate can be performed easily.

As shown in FIG. 2B, the light emitting device 1000 may include a reflective member 40 covering the element side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. When the element side surface 202 of the light-emitting element 20 is covered with the reflective member, the contrast between the light-emitting area and the non-light-emitting area is increased, and a light-emitting device having good "visibility" can be obtained.

As the material of the reflective member 40, for example, a member containing a white pigment in the base material can be used. As the base material of the reflective member 40, it is preferable to use a resin, and for example, it is preferable to use a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof. In particular, it is preferable to use a silicone resin excellent in heat resistance and light resistance as the base material of the reflective member 40. Further, as the base material of the reflective member 40, an epoxy resin having a higher hardness than a silicone resin may be used. By doing in this way, the intensity of the light emitting device can be improved.

As the white pigment of the reflective member 40, for example, titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, One of aluminum oxide, zirconium oxide, silicon oxide and the like may be used alone, or two or more of them may be used in combination. The shape of the white pigment can be appropriately selected and may be amorphous or crushed, but from the viewpoint of fluidity, it is preferably a spherical shape. Further, the particle diameter of the white pigment is preferably about 0.1 µm or more and 0.5 µm or less, for example. However, in order to enhance the effect of light reflectivity and coating property, the smaller the particle size of the white pigment is, the more preferable. The content of the white pigment can be appropriately selected, but from the viewpoints of light reflectivity and viscosity in liquid phase, for example, 10 wt% or more and 80 wt% or less are preferable, 20 wt% or more and 70 wt% or less are more preferable, and 30 wt% % Or more and 60 wt% or less are more preferable. In addition, "wt%" is a weight percent, and represents the ratio of the weight of the material to the total weight of the reflective member.

As shown in Fig. 6, it is preferable that the side surface 404 in the long longitudinal direction of the reflective member 40 located on the lower surface 114 side of the substrate is inclined toward the inside of the light emitting device 1000 in the Z direction. . In this way, when the light emitting device 1000 is mounted on the supporting substrate, contact between the side surface 404 of the reflective member 40 and the supporting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. It is preferable that the side surface 403 in the longitudinal direction of the reflective member 40 located on the upper surface 113 side of the substrate is inclined toward the inside of the light emitting device 1000 in the Z direction. In this way, contact between the side surface of the reflective member 40 and the adsorption nozzle (collet) is suppressed, and damage to the reflective member 40 during adsorption of the light emitting device 1000 can be suppressed. In this way, the side surface 404 in the long longitudinal direction of the reflective member 40 located on the lower surface 114 side and the side surface 403 in the long longitudinal direction of the reflective member 40 located on the upper surface 113 side, It is preferable that it is inclined toward the inside of the light emitting device 1000 in the Z direction. The inclination angle θ of the reflective member 40 can be appropriately selected, but from the viewpoint of the strength of the reflective member 40 and the easy to exhibit such effects, it is preferably 0.3° or more and 3° or less, and 0.5° or more and 2° It is more preferable that it is below, and it is more preferable that it is 0.7 degrees or more and 1.5 degrees or less.

As shown in FIG. 2B, the light emitting device 1000 may be provided with a light-transmitting member 30. It is preferable that the light-transmitting member 30 is located on the light-emitting element 20. Since the light-transmitting member 30 is positioned on the light-emitting element 20, the light-emitting element can be protected from external stress. It is preferable that the reflective member 40 covers the side surface of the translucent member 30. In this way, the contrast between the light-emitting area and the non-light-emitting area is increased, and a light-emitting device having good "visibility" can be obtained.

The light-transmitting member 30 may be in contact with the light extraction surface 201 or may cover the light extraction surface 201 via the light guide member 50 as shown in FIG. 2B. The light guide member 50 may be positioned only between the light extraction surface 201 of the light emitting device and the light-transmitting member 30 to fix the light emitting device 20 and the light-transmitting member 30, and the light extraction surface of the light emitting device The light-emitting element 20 and the light-transmitting member 30 may be fixed by covering from 201 to the element side 202 of the light-emitting element. The light guide member 50 has a higher transmittance of light from the light emitting element than the reflective member 40. For this reason, by covering the light guide member to the side surface of the light emitting element, light emitted from the element side surface of the light emitting element can be easily extracted to the outside of the light emitting device through the light guide member, so that light extraction efficiency can be improved.

The translucent member 30 may contain wavelength conversion particles. By doing in this way, color adjustment of the light-emitting device becomes easy. The wavelength converting particle is a member that absorbs at least a part of the primary light emitted by the light-emitting element 20 and emits secondary light having a wavelength different from that of the primary light. By including the wavelength converting particles in the light-transmitting member 30, it is possible to output mixed-colored light in which the primary light emitted by the light emitting element and the secondary light emitted by the wavelength converting particles are mixed. For example, if a blue LED is used for the light-emitting element 20 and a phosphor such as YAG is used for the wavelength converting particles, white light obtained by mixing the blue light of the blue LED and the yellow light excited by the blue light and emitted by the phosphor is output. A light emitting device can be configured. Further, a light-emitting device that outputs white light may be constructed using a blue LED for the light-emitting element 20, a β-sialon-based phosphor, which is a green phosphor, and a manganese-activated fluoride-based phosphor, which is a red phosphor.

The wavelength converting particles may be uniformly dispersed in the translucent member, or the wavelength converting particles may be unevenly distributed in the vicinity of the light emitting element than the upper surface of the translucent member 30. By distributing wavelength converting particles in the vicinity of the light emitting element rather than the upper surface of the translucent member 30, the base material of the translucent member 30 functions as a protective layer even when wavelength converting particles weak to moisture are used to suppress deterioration of the wavelength converting particles. can do. In addition, as shown in Fig. 2B, the light-transmitting member 30 may include layers 31 and 32 containing wavelength converting particles and a layer 33 substantially not containing wavelength converting particles. In the Z-direction, the layer 33 that does not contain the wavelength conversion particles substantially is located above the layers 31 and 32 containing the wavelength conversion particles. By doing in this way, the layer 33 which does not contain the wavelength conversion particle substantially functions as a protective layer, and deterioration of the wavelength conversion particle can be suppressed. Examples of the wavelength converting particles weak to moisture include manganese activated fluoride phosphors. The manganese-activated fluoride-based phosphor is a preferable member from the viewpoint of color reproducibility because light emission with a relatively narrow spectral line width is obtained. The term "substantially free of wavelength converting particles" means not to exclude wavelength converting particles to be mixed inevitably, and the content of the wavelength converting particles is preferably 0.05% by weight or less.

The layer containing the wavelength conversion particles of the light-transmitting member 30 may be a single layer or a plurality of layers. For example, as shown in FIG. 2B, the translucent member 30 may include a first wavelength conversion layer 31 and a second wavelength conversion layer 32 covering the first wavelength conversion layer 31. . The second wavelength conversion layer 32 may directly cover the first wavelength conversion layer 31 or may cover the first wavelength conversion layer 31 through a layer having different light transmittance. Further, the first wavelength conversion layer 31 is disposed closer to the light extraction surface 201 of the light emitting element 20 than the second wavelength conversion layer 32. It is preferable that the emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is shorter than the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32. In this way, the wavelength conversion particles of the second wavelength conversion layer 32 can be excited by the light from the first wavelength conversion layer 31 excited by the light emitting element. Thereby, the light from the wavelength conversion particles of the second wavelength conversion layer 32 can be increased.

The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 31 is 500 nm or more and 570 nm or less, and the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 32 is 610 nm. It is preferably not less than 750 nm. By doing in this way, a light emitting device with high color reproducibility can be obtained. For example, as the wavelength conversion particles contained in the first wavelength conversion layer 31, a β-sialon-based phosphor may be mentioned, and as the wavelength conversion particles contained in the second wavelength conversion layer 32, manganese activated potassium fluoride silicate The phosphor of is mentioned. In the case of using a phosphor of manganese-activated potassium fluoride silicate as the wavelength conversion particles contained in the second wavelength conversion layer 32, in particular, the translucent member 30 includes the first wavelength conversion layer 31 and the second wavelength conversion. It is preferred to have a layer 32. The phosphor of manganese-activated potassium fluoride silicate tends to cause luminance saturation, but the first wavelength conversion layer 31 is located between the second wavelength conversion layer 32 and the light emitting device 20, so that the light from the light emitting device is excessive. The manganese-activated potassium fluoride silicate can be suppressed from being irradiated to the phosphor. Thereby, deterioration of the phosphor of manganese-activated potassium fluoride silicate can be suppressed.

The light-transmitting member absorbs at least a part of the primary light emitted by the light-emitting element, and absorbs and allows the first wavelength conversion particles to emit secondary light through a forbidden transition, and at least a part of the primary light emitted by the light-emitting element. You may be provided with the 2nd wavelength conversion particle which emits secondary light by transition. In general, the first wavelength converting particles that emit secondary light by a forbidden transition have a longer afterglow time than the second wavelength converting particles that emit secondary light by an allowable transition. For this reason, when the translucent member includes the first wavelength converting particles and the second wavelength converting particles, the afterglow time can be shortened compared to the case where the translucent member includes only the first wavelength converting particles. For example, as the first wavelength converting particles, a phosphor of manganese-activated potassium fluoride silicate (for example, K ₂ SiF ₆ :Mn) is exemplified, and as the second wavelength converting particles, a CASN-based phosphor is mentioned. Since the light-transmitting member contains a CASN-based phosphor and a phosphor of manganese-activated potassium fluoride silicate, the afterglow time can be shortened compared to the case where the light-transmitting member contains only a phosphor of manganese-activated potassium fluoride silicate. Further, in general, manganese-activated potassium fluoride silicate has a light emission peak with a narrower half width than that of a CASN-based phosphor, so that the color purity is increased and the color reproducibility is improved. For this reason, when the light-transmitting member contains a CASN-based phosphor and a phosphor of manganese-activated potassium fluoride silicate, color reproducibility is better than when the light-transmitting member contains only a CASN-based phosphor.

For example, the weight of the phosphor of manganese activated potassium fluoride silicate contained in the light-transmitting member is preferably 0.5 times or more and 6 times or less, more preferably 1 to 5 times or less, and 2 More preferably more than 4 times or less. As the weight of the phosphor of manganese-activated potassium fluoride silicate increases, the color reproducibility of the light emitting device is improved. As the weight of the phosphor of the CASN-based phosphor increases, the afterglow time can be shortened.

It is preferable that the average particle diameter of the phosphor of manganese-activated potassium fluoride silicate is 5 µm or more and 30 µm or less. In addition, the average particle diameter of the CASN-based phosphor is preferably 5 µm or more and 30 µm or less. When the average particle diameter of the phosphor of manganese-activated potassium fluoride silicate and/or the CASN-based phosphor is 30 μm or less, light from the light emitting element is liable to diffuse to the wavelength converting particles, so that the light distribution color variation of the light emitting device can be suppressed. When the average particle diameter of the phosphor of manganese-activated potassium fluoride silicate and/or the CASN-based phosphor is 5 µm or more, it becomes easy to extract light from the light-emitting element, thereby improving the light extraction efficiency of the light-emitting device.

The CASN-based phosphor and the phosphor of manganese-activated potassium fluoride silicate may be contained in the same wavelength conversion layer as the translucent member, and when the translucent member includes a plurality of wavelength conversion layers, may be contained in different wavelength conversion layers. . When the phosphor of manganese-activated potassium fluoride silicate and the CASN-based phosphor are contained in different wavelength conversion layers, the phosphor of manganese-activated potassium fluoride silicate and the wavelength conversion particles with a short peak wavelength of light in the CASN-based phosphor are located close to the light emitting element. It is desirable to do. In this way, the wavelength converting particles having a long peak wavelength of light can be excited by light from the wavelength converting particles having a short peak wavelength of light. For example, when the peak wavelength of light of the phosphor of manganese-activated potassium fluoride silicate is around 631 nm and the peak wavelength of light of the CASN-based phosphor is around 650 nm, it is preferable that the phosphor of manganese-activated potassium fluoride silicate is close to the light emitting element. .

Other examples of the second wavelength converting particles include SCASN-based phosphors and SLAN phosphors (SrLiAl ₃ N ₄ :Eu). For example, the light-transmitting member may contain an SLAN phosphor and a phosphor of manganese activated potassium fluoride silicate. Further, the light-transmitting member may contain first and second wavelength converting particles that are red phosphors, and β-sialon-based phosphors that are green phosphors. By doing in this way, the color reproducibility of the light emitting device is improved.

(Prepare a supporting substrate)

As shown in FIGS. 7A and 7B, a first wiring pattern 81 including a bonding region 810 and a bonding region 810 on the support substrate 70, the upper surface 701 of the support substrate 70 A support substrate 5000 having an enclosing insulating region 811 is prepared. The supporting base material 70 is an insulating member. The bonding region 810 of the support substrate is a part of the first wiring pattern 81 and is a portion bonded to the second wiring of the light emitting device by solder. The insulating region 811 surrounding the bonding region 810 is insulated from the upper surface 701 when the upper surface 701 of the support substrate 70 is exposed to the outside as shown in FIG. 7A. A region 811 is provided. When the bonding region 810 is surrounded by the insulating region 811, it becomes easy to control the spread of the molten solder wet. As a result, the self-alignment effect is increased, and the mountability of the light emitting device is improved. In general, the molten solder is more likely to wet and spread on the first wiring pattern than on the supporting substrate. Known materials can be used for the supporting substrate and the first wiring pattern.

As shown in Fig. 7B, as shown in the support substrate 5000, a second wiring pattern 82 positioned on the lower surface of the support substrate may be provided. The first wiring pattern 81 positioned on the upper surface of the supporting substrate and the second wiring pattern 82 positioned on the lower surface of the supporting substrate may be electrically connected by vias. In addition, when the power supply unit 85 for supplying electricity is provided on the upper surface of the substrate, the power supply unit 85 and the second wiring pattern 82 may be electrically connected by vias.

As shown in FIGS. 8A and 8B, the support substrate 5001 may be provided with an insulating layer 72 covering the upper surface 701 of the support base material 70 and the first wiring pattern 81. When the insulating layer 72 surrounds the bonding region 810 of the first wiring pattern 81, the insulating layer 72 includes an insulating region 811. In general, the dissolved solder is more likely to wet and spread on the first wiring pattern than on the insulating layer. In addition, when the bonding region of the first wiring pattern is surrounded by the supporting substrate and the insulating layer, the supporting substrate and the insulating layer may be provided with the insulating region.

(Solder is placed on the junction area and the insulation area)

9A and 9B, the bonding region 810 and insulation so that the volume of the solder 90 located on the insulating region 811 is greater than the volume of the solder 90 located on the bonding region 810. A solder 90 is disposed on the region 811. In this way, the volume of the solder 90 positioned on the bonding region 810 can be reduced. Thereby, when the light emitting device and the supporting substrate described later are joined by solder, the molten solder can be prevented from entering between the lower surface of the substrate and the upper surface of the support substrate. For this reason, when the light emitting device and the supporting substrate are bonded together, it is possible to suppress the formation of solder after heat dissolution between the lower surface of the substrate and the upper surface of the support substrate, thereby suppressing the inclination of the light emitting device with respect to the support substrate. I can.

As shown in FIG. 9A, when viewed from the top view, the maximum width D2 of the solder 90 positioned on the insulating region 811 is wider than the maximum width D1 of the solder 90 positioned on the bonding region 810. It is desirable. In this way, the volume of the solder 90 located on the insulating region 811 becomes easier to be larger than the volume of the solder 90 located on the bonding region 810. In addition, in this specification, the maximum width of the solder 90 is taken as the maximum value of the width of the solder in the X direction.

As shown in FIG. 9B, when viewed from a cross-sectional view, the upper surface of the solder 90 positioned on the insulating region 811 and the upper surface of the solder 90 positioned on the bonding region 810 may be on the same plane. For example, by disposing a metal mask having an opening on the support substrate and forming solder in the opening of the metal mask by a screen printing method, the upper surface of the solder located on the insulating region and the solder located on the bonding region The top surface of may be on the same plane. In addition, in the present specification, the term "coplanar" means that a variation of about ±5 µm is allowed.

When viewed from the cross-sectional view, the maximum thickness of the solder located on the insulating area may be the same as the maximum thickness of the solder located on the bonding area, and the maximum thickness of the solder located on the insulating area when viewed from the cross-sectional view is on the bonding area. It may be thinner than the maximum thickness of the solder positioned at, and as shown in Figs. 9B and 9C, the maximum thickness D4 of the solder 90 positioned on the insulating region 811 when viewed from the cross-sectional view is the bonding region 810 It may be thicker than the maximum thickness D3 of the solder 90 located thereon. When viewed from the cross-sectional view, the maximum thickness (D4) of the solder 90 located on the insulating region 811 becomes thicker than the maximum thickness (D3) of the solder 90 located on the bonding region 810, and thus the insulating region The volume of the solder 90 located on the 811 is easier to be larger than the volume of the solder 90 located on the bonding region 810. For example, when viewed from the top view, even if the area of the solder located on the insulating area is smaller than the area of the solder located on the bonding area, the maximum thickness of the solder located on the insulating area when viewed from the cross-sectional view By becoming thicker than the maximum thickness of the solder located on the bonding area, the volume of the solder located on the insulating area can be made larger than the volume of the solder 90 located on the bonding area 810. In addition, in this specification, the maximum thickness of the solder is taken as the maximum value of the thickness of the solder in the Y direction.

As shown in Fig. 9A, the adhesive resin 92 before curing may be formed on the support substrate. The adhesive resin 92 can be used as a member for bonding the light emitting device and the supporting substrate. By providing the adhesive resin, the bonding strength between the light emitting device and the supporting substrate can be improved. The thickness of the adhesive resin in the Y direction is thicker than the distance between the lower surface of the substrate and the upper surface of the support substrate when a light emitting device described later is mounted on the support substrate in order to contact the light emitting element. As the adhesive resin, a known resin such as a thermosetting resin and/or a thermoplastic resin can be used. Thermosetting resins, such as an epoxy resin and a silicone resin, are excellent in heat resistance and light resistance, and are preferably used for adhesive resins. The adhesive resin may be separated from the bonding area or may be in contact with a part of the bonding area. Since solder is formed on the bonding area, it is preferable to separate the bonding resin from the bonding area when viewed from the top. When the adhesive resin is separated from the bonding area, when bonding the light emitting device and the supporting substrate by solder, the dissolved solder wets and spreads over the bonding area. As shown in Fig. 9A, it is preferable that the adhesive resin 92 is positioned between the pair of bonding regions 810 to be bonded to the second wiring of one light emitting device in the X direction. Since the second wiring of the light emitting device and the bonding region of the supporting substrate are joined by solder, the adhesive resin is positioned between the pair of bonding regions 810 to be joined with the second wiring of the light emitting device in the X direction, Stress applied to the substrate of the light emitting device can be suppressed.

As a method of forming the adhesive resin before curing on the supporting substrate, for example, application by dispensing or pin transfer, spraying by ink jet or spray, and the like may be mentioned. In the case of forming an adhesive resin by dispensing or the like, as shown in Fig. 9A, one point of the adhesive resin 92 may be applied, and as shown in Figs. 9D and 9E, even if a plurality of points of the adhesive resin 92 are applied. do. Further, as shown in Fig. 9F, the adhesive resin applied in multiple points may be connected. Further, when a plurality of adhesive resins 92 are applied, a plurality of adhesive resins may be arranged in the Z direction, or may be formed so that a plurality of adhesive resins are arranged in the X direction as shown in Fig. 9D.

(The light emitting device is mounted on the supporting substrate)

As shown in FIGS. 10A and 10B, when viewed from the top view, the solder 90 and the second wiring 13 located near the lower surface 114 of the substrate are separated from each other to support the light emitting device 1000. ) To be wit. In the present specification, the second wiring positioned near the lower surface of the substrate means a portion of the second wiring 13 on the same plane as the lower surface 114 of the substrate. When the light emitting device is attached to the supporting substrate by separating the solder 90 from the second wiring 13 located near the lower surface 114 of the base material, the dissolved solder when the light emitting device and the supporting substrate are joined by solder. Intrusion between the lower surface of this substrate and the upper surface of the support substrate can be suppressed. Thereby, when the light emitting device described later and the supporting substrate are bonded together, it is possible to suppress the formation of solder after heat dissolution between the lower surface of the substrate and the upper surface of the support substrate, so that the light emitting device is inclined with respect to the support substrate. Can be suppressed. Further, when placing the light emitting device 1000 on the support substrate 5000 by separating the solder 90 from the second wiring 13 located near the lower surface 114 of the substrate, the lower surface 114 of the substrate and the Solder before heat dissolution is not located between the upper surfaces of the support substrate.

As shown in Fig. 10B, when viewed from the cross-sectional view, the solder 90 and the second wiring 13 may be separated, and as shown in Fig. 10C, when viewed from the cross-sectional view, the solder 90 and the lower surface of the substrate ( 114) At least a part of the second wiring 13 located outside the vicinity may be in contact. The second wiring 13 located outside the vicinity of the lower surface 114 of the substrate is a part of the second wiring 13 that is not on the same plane as the lower surface 114 of the substrate. That is, at least a part of the solder 90 and the second wiring 13 that is not on the same plane as the lower surface 114 of the substrate may be in contact with each other.

As shown in Fig. 9A, when the adhesive resin 92 before curing is formed on the support substrate, the light emitting device is placed on the support substrate so that the adhesive resin before curing and a part of the light emitting device come into contact with each other. By doing in this way, since the light emitting device and the supporting substrate can also be fixed with the cured adhesive resin, the bonding strength between the light emitting device and the supporting substrate is improved. The position of the adhesive resin is not particularly limited. For example, as shown in Fig. 10A, the adhesive resin 92 may be positioned between the plurality of recesses 16 of the substrate. Since the bonding regions of the second wiring 13 respectively disposed in the plurality of concave portions of the substrate 10 and the wiring pattern of the supporting substrate are joined by solder, an adhesive resin between the plurality of concave portions 16 of the substrate By positioning 92, it is possible to suppress the stress applied to the substrate of the light emitting device. In addition, as shown in Fig. 10A, when viewed from the top view, the shortest distance between the front surface 111 of the substrate and the outer edge of the adhesive resin 92 is less than the shortest distance between the front surface 111 of the substrate and the outer edge of the solder 90 It is desirable to be short. By doing in this way, since the front surface 111 side of the base material and the supporting substrate can be bonded by the adhesive resin 92, the bonding strength between the light emitting device and the supporting substrate is improved. Further, the light emitting device to which the adhesive resin before curing has been attached may be mounted on the supporting substrate.

When viewed from the top view, the size of the adhesive resin is not particularly limited, but when viewed from the top, the maximum width (D5) of the adhesive resin in the Z direction is the maximum width (D6) of the light emitting device in the Z direction. It is preferably 0.2 to 0.7 times of. As seen in the top view, the maximum width (D5) of the adhesive resin in the Z direction becomes 0.2 times or more of the maximum width (D6) of the light emitting device in the Z direction, thereby increasing the volume of the adhesive resin. The bonding strength between the device and the supporting substrate is improved. As seen from the top view, the maximum width (D5) of the adhesive resin in the Z direction becomes 0.7 times or less of the maximum width (D6) of the light emitting device in the Z direction, so that the adhesive resin is formed on the bonding area. It can be difficult to become.

When viewed from the top view, it is preferable that the maximum width of the concave portion is narrower than the maximum width of the bonding region. By doing in this way, it becomes easy to enlarge the area of the 2nd wiring which is located on the bonding area|region as seen on the top view. In addition, the maximum width of the concave portion is the maximum value of the width of the concave portion in the X direction, and the maximum width of the bonding region is the maximum value of the width of the bonding region in the X direction.

(Join the junction between the second wiring of the light emitting device and the support substrate)

As shown in Fig. 11, the solder 90 is heated and dissolved, and the second wiring 13 of the light emitting device and the bonding region 810 of the support substrate 5000 are bonded. The molten solder collects on the bonding region 810 which is easily wetted and spread. Thereby, the volume of the solder after heating and melting located on the bonding region can be made larger than the volume of the solder after heating and melting located on the insulating region. As the volume of the solder after heating and melting located on the bonding region increases, the second wiring 13 and the bonding region 810 are easily joined by solder. Accordingly, the bonding strength between the light emitting device and the supporting substrate is improved. Since the solder after heat dissolution is difficult to be formed between the lower surface of the substrate and the upper surface of the support substrate, it is possible to suppress oblique bonding of the light emitting device to the support substrate. As shown in Fig. 11, it is preferable that all of the solder after heating and melting is located on the bonding region.

When the adhesive resin before curing is formed on the support substrate, the adhesive resin may be cured when the solder is heated and dissolved in order to join the second wiring of the light emitting device and the bonding region 810 of the support substrate 5000. . By doing in this way, the time to manufacture a light source device can be shortened.

As described above, by performing the above-described steps, the light source device 1000A can be manufactured.

<Embodiment 2>

A method of manufacturing the light source device according to the second embodiment will be described. The manufacturing method of the light source device of Embodiment 2 is the same from the manufacturing method of the light source device of Embodiment 1 except that the process of preparing a light emitting device is different.

As shown in Fig. 13B, a substrate 10 and a light emitting device 2000 including a plurality of light emitting elements are prepared. Like the light emitting device of the first embodiment, the substrate 10 includes a substrate 11, a first wiring 12, and a second wiring 13. The light-emitting device of Embodiment 1 has one light-emitting element, but the light-emitting device 2000 of Embodiment 2 includes a plurality of light-emitting elements, including a first light-emitting element 20A and a second light-emitting element 20B. Further, the first light-emitting element and/or the second light-emitting element are sometimes referred to as light-emitting elements. The peak emission wavelengths of the first light-emitting element and the second light-emitting element may be the same or different. For example, when the peak emission wavelength of the first light-emitting element and the second light-emitting element are the same, the peak wavelength of light emission of the first light-emitting element and the second light-emitting element is 430 nm or more and less than 490 nm (in the blue region). Wavelength range). In addition, when the emission peak wavelengths of the first light-emitting element and the second light-emitting element are different, the first light-emitting element and light emission in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region) The second light-emitting device may have a peak wavelength of 490 nm or more and 570 nm or less (wavelength range in the green region). By doing in this way, the color reproducibility of a light emitting device can be improved. In addition, when the emission peak wavelength is the same, it is assumed that fluctuation of about ±10 nm is allowed.

As shown in Fig. 13B, a light-transmitting member 30 covering the first light-emitting element 20A and the second light-emitting element 20B may be provided. The light emitting device 2000 is provided with a light-transmitting member 30 that covers the first light extraction surface 201A of the first light-emitting element 20A and the second light extraction surface 201B of the second light-emitting element 20B. By doing so, it is possible to suppress non-uniformity in luminance between the first light-emitting element and the second light-emitting element. In addition, when the emission peak wavelengths of the first light-emitting element and the second light-emitting element are different, the light from the first light-emitting element and the light from the second light-emitting element are guided to the light guide member, thereby improving the color mixing property of the light-emitting device. I can make it.

As shown in Fig. 13B, the light guide member 50 may continuously cover the first element side 202A of the first light-emitting element 20A and the second element side 202B of the second light-emitting element 20B. . By doing in this way, non-uniformity in luminance between the first light-emitting element and the second light-emitting element can be suppressed.

As shown in FIGS. 12B and 13B, the light emitting device 2000 may include an insulating film 18 covering a part of the third wiring 14. By providing the insulating film 18, it is possible to secure the insulating property on the back surface and to prevent a short circuit. Further, by providing the insulating film 18, it is possible to prevent the third wiring from peeling off from the substrate.

Like the light-emitting device 2001 shown in Fig. 14, a first light-transmitting member 30A covering the first light-emitting element 20A, and a second light-transmitting member 30B covering the second light-emitting element 20B are provided. You can do it. The wavelength converting particles included in the first light-transmitting member and the second light-transmitting member may be the same or different. A first light-emitting element in which the peak wavelength of light emission is in the range of 430 nm or more and less than 490 nm (wavelength range in the blue region), and the first light-emitting device in which the peak wavelength of light emission is in the range (wavelength range in the green area) When the second light-emitting element is provided, the first light-transmitting member 30A contains a red phosphor, and the second light-transmitting member 30B does not have to contain substantially wavelength converting particles. By doing in this way, the color reproducibility of a light emitting device can be improved. In addition, since the light from the second light emitting device is not blocked by the wavelength converting particles, the light extraction efficiency of the light emitting device is improved. Examples of the red phosphor to be contained in the first light-transmitting member include manganese-activated fluoride-based phosphors.

Hereinafter, each constituent element in the light emitting device according to an embodiment of the present invention will be described.

(Substrate (10))

The substrate 10 is a member on which a light emitting element is mounted. The substrate 10 includes at least a substrate 11, a first wiring 12, and a second wiring 13.

(Material (11))

The substrate 11 can be constituted by using an insulating member such as resin or fiber-reinforced resin, ceramics, and glass. Examples of the resin or fiber-reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, or a mixture thereof. Among these substrates, it is particularly preferable to use a substrate having physical properties close to the linear expansion coefficient of the light emitting device. The lower limit of the thickness of the substrate can be appropriately selected, but from the viewpoint of the strength of the substrate, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. In addition, the upper limit of the thickness of the substrate is preferably 0.5 mm or less, and more preferably 0.4 mm or less from the viewpoint of the thickness (depth) of the light emitting device.

(First wiring (12))

The first wiring is disposed in front of the substrate and is electrically connected to the light emitting element. The first wiring may be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. A single layer or multiple layers of such metals or alloys may be used. In particular, copper or a copper alloy is preferable from the viewpoint of heat dissipation. Further, a layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof may be provided on the surface layer of the first wiring from the viewpoint of the wettability and/or light reflectivity of the soluble conductive adhesive member.

(Second wiring (13))

The second wiring is a member that is electrically connected to the first wiring and covers the inner wall of the concave portion of the substrate. The second wiring can use a conductive member similar to that of the first wiring.

(Light-emitting element 20 (first light-emitting element, second light-emitting element))

The light-emitting element is a semiconductor element that emits light by itself by applying a voltage, and an existing semiconductor element composed of a nitride semiconductor or the like can be applied. As a light emitting element, an LED chip is mentioned, for example. The light-emitting element includes at least a semiconductor layer, and in most cases further includes an element substrate. The light-emitting element has element electrodes. The element electrode can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or an alloy thereof. It is preferable to use a nitride semiconductor as the semiconductor material. The nitride semiconductor is mainly represented _{by the} general formula In _x Al _y Ga _1-xy N (0≦x, 0≦y, x+y≦1). In addition, an InAlGaAs-based semiconductor, an InAlGaP-based semiconductor, zinc sulfide, zinc selenide, silicon carbide, or the like may be used. The element substrate of the light-emitting element is a substrate for crystal growth that can mainly grow a crystal of a semiconductor constituting a semiconductor laminate, but may be a bonding substrate for bonding to a semiconductor element structure separated from the substrate for crystal growth. Since the device substrate has light-transmitting properties, it is easy to adopt flip chip mounting and it is easy to increase the light extraction efficiency. Examples of the base material of the device substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenide, and diamond. Among them, sapphire is preferable. The thickness of the element substrate can be appropriately selected, for example, 0.02 mm or more and 1 mm or less, and from the viewpoint of the strength of the element substrate and/or the thickness of the light emitting device, it is preferably 0.05 mm or more and 0.3 mm or less.

(Reflective member (40))

The reflective member is a member that covers the element side surface 202 of the light-emitting element 20 and the front surface 111 of the base material to form a light-emitting device having good "visibility". The light reflectance of the reflective member at the emission peak wavelength of the light-emitting element is preferably 70% or more, more preferably 80% or more, and still more preferably 90% or more. For example, as the reflective member, a member containing a white pigment in the resin can be used.

(Translucent member 30)

The light-transmitting member is a light-transmitting member that covers the light extraction surface of the light-emitting element and protects the light-emitting element. As the material of the translucent member, for example, a resin can be used. Examples of resins that can be used for the translucent member include silicone resins, epoxy resins, phenol resins, polycarbonate resins, acrylic resins, or modified resins thereof. As the material of the light-transmitting member, the use of an epoxy resin is preferable because the strength of the light emitting device can be improved compared to the case of using a silicone resin. Further, silicone resins and modified silicone resins are preferable because they are excellent in heat resistance and light resistance. The translucent member may contain wavelength conversion particles and/or diffusion particles.

(Wavelength conversion particles)

The wavelength converting particles absorb at least a part of the primary light emitted by the light emitting element, and emit secondary light having a wavelength different from that of the primary light. Among the specific examples shown below, the wavelength converting particles can be used alone or in combination of two or more. When the translucent member includes a plurality of wavelength conversion layers, the wavelength conversion particles contained in each wavelength conversion layer may be the same or different.

As wavelength conversion particles that emit green light, yttrium-aluminum-garnet-based phosphors (e.g., Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), lutetium-aluminum-garnet-based phosphors (e.g., Lu ₃ (Al, Ga) ₅ O ₁₂ :Ce), terbium-aluminum-garnet-based phosphor (e.g. Tb ₃ (Al, Ga) ₅ O ₁₂ :Ce)-based phosphor, silicate-based phosphor (e.g. (Ba, Sr) ₂ SiO ₄ :Eu), chlorosilicate phosphor (for example, Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu), β-sialon phosphor (for example, Si _6-z Al _z O _z N _8-z : Eu (0<z<4.2)), SGS phosphors (e.g. SrGa ₂ S ₄ :Eu), alkaline earth aluminate phosphors (e.g. (Ba, Sr, Ca) Mg _x Al ₁₀ O _16+x :Eu, Mn (however, 0≤X≤≤1)), etc. are mentioned. As the wavelength converting particles of yellow light emission, α-sialon-based phosphors (for example, M _z (Si, Al) ₁₂ (O, N) ₁₆ (however, 0<z≤2, M is Li, Mg, Ca) , Y, and a lanthanide element excluding La and Ce), etc. In addition, among the wavelength conversion particles that emit green light, there are also wavelength conversion particles that emit yellow light, and, for example, yttrium/aluminum/garnet system. In the phosphor, by substituting a part of Y with Gd, the emission peak wavelength can be shifted to the long wavelength side, and yellow light emission is possible, and among these, there are also wavelength conversion particles capable of orange light emission. Examples include nitrogen-containing calcium aluminosilicate (CASN or SCASN)-based phosphors (eg (Sr, Ca) AlSiN ₃ :Eu), SLAN phosphors (SrLiAl ₃ N ₄ :Eu), etc. In addition, manganese Active fluoride-based phosphor (general formula (I) A ₂ [M _1-a Mn _a F ₆ ] A phosphor represented by (however, in the general formula (I), A is K, Li, Na, Rb, Cs) And NH ₄ is at least one element selected from the group consisting of, M is at least one element selected from the group consisting of a group 4 element and a group 14 element, and a satisfies 0<a<0.2) A representative example of this manganese-activated fluoride-based phosphor is a manganese-activated potassium fluoride silicate phosphor (for example, K ₂ SiF ₆ :Mn).

(Diffuse particles)

Examples of the diffusion particles include silicon oxide, aluminum oxide, zirconium oxide, and zinc oxide. The diffused particles can be used singly or in combination of two or more of them. In particular, silicon oxide having a small coefficient of thermal expansion is preferred. Further, by using nanoparticles as the diffusion particles, it is possible to increase scattering of light emitted by the light-emitting element and to reduce the amount of wavelength conversion particles used. In addition, nanoparticles are made into particles having a particle diameter of 1 nm or more and 100 nm or less. In addition, "particle diameter" in the present specification, for example, is defined as D _50.

(Light guide member 50)

The light guide member is a member that fixes the light-emitting element and the light-transmitting member, and guides light from the light-emitting element to the light-transmitting member. As the base material of the light guide member, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof may be mentioned. The use of an epoxy resin as the material of the light guide member is preferable because the strength of the light emitting device can be improved compared to the case of using a silicone resin. Further, silicone resins and modified silicone resins are preferable because they are excellent in heat resistance and light resistance. The light guide member may contain the same wavelength conversion particles and/or diffusion particles as the above-described translucent member.

(Conductive adhesive member (60))

The conductive adhesive member is a member that electrically connects the element electrode of the light emitting element and the first wiring. Examples of the conductive adhesive member include bumps such as gold, silver, and copper, metal pastes containing metal powders such as silver, gold, copper, platinum, aluminum, palladium, and resin binders, tin-bismuth-based, tin-copper-based, and tin -Any one of silver-based, gold-tin-based solder, and low-melting-point metal can be used.

A light-emitting device according to an embodiment of the present invention includes a backlight device for a liquid crystal display, various lighting devices, large displays, various display devices such as advertisements and destination guides, projector devices, and further, digital video cameras, fax machines, copy machines, It can be used for image reading devices in scanners or the like.

1000A: light source device
1000, 1001, 2000, 2001: light emitting device
5000, 5001: support substrate
10: substrate
11: description
12: first wiring
13: the second wiring
14: third wiring
15: empty
151: fourth wiring
152: filling member
16: recess
18: insulating film
20: light-emitting element
30: light-transmitting member
40: reflective member
50: light guide member
60: conductive adhesive member

Claims (6)

A front extending in a long longitudinal direction and a short longitudinal direction orthogonal to the long longitudinal direction, a rear surface positioned on the opposite side of the front, an upper surface adjacent to the front and perpendicular to the front, and a side opposite to the upper surface A substrate having a lower surface positioned at, and a plurality of concave portions opening to the rear surface and the lower surface, a first wiring disposed on the front surface, and electrically connected to the first wiring and disposed in each of the plurality of concave portions A step of preparing a light-emitting device comprising a substrate having a second wiring and at least one light-emitting element electrically connected to the first wiring and mounted on the first wiring; and
A step of preparing a support substrate having a support substrate, a first wiring pattern including a bonding region on an upper surface of the support substrate, and an insulating region surrounding the bonding region,
A step of disposing solder on the bonding area and the insulating area so that the maximum width of the solder located on the insulating area is greater than the maximum width of the solder located on the bonding area, as viewed from the top,
A step of placing the light emitting device on the supporting substrate by separating the solder from the second wiring located in the vicinity of the lower surface when viewed from the top,
Heating and melting the solder, and bonding the second wiring of the light emitting device and the bonding region of the support substrate
Containing, the manufacturing method of the light source device. The method of claim 1,
A method of manufacturing a light source device, comprising an adhesive resin bonding the substrate and the support substrate. The method of claim 2,
In the step of bonding the second wiring of the light emitting device and the bonding region of the support substrate, the adhesive resin is cured. The method according to claim 2 or 3,
The method of manufacturing a light source device, wherein the adhesive resin is positioned between the plurality of concave portions. The method according to any one of claims 1 to 4,
When viewed from the top, the maximum width of the concave portion is narrower than the maximum width of the bonding region. The method according to any one of claims 1 to 5,
The method of manufacturing a light source device, wherein the depth of the lower surface side of each of the plurality of concave portions is greater than the depth of the upper surface side.

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