KR20200064931A - Calibration method of infrared camera and calibration system of infrared camera - Google Patents

Abstract

It improves the measurement accuracy of temperature by infrared camera. The infrared camera calibration method includes an acquisition process, a calibration value calculation process, an interpolation curve specifying process, and a storage process. In the acquisition process, the placement table on which the substrate is placed is set at a plurality of different temperatures, and at each temperature, a measurement value of the radiation amount of infrared radiation from each of the plurality of regions of the upper surface of the placement table is acquired by an infrared camera. In the correction value calculation process, at each temperature, a difference between the measured value of the reference region, which is the region where the temperature sensor is provided, and the measured value of the other region is calculated as the correction value. In the interpolation curve specifying step, for each region, an interpolation curve indicating the tendency of the change of the correction value with respect to the measured value of the reference region is specified. In the storage step, parameters that define the interpolation curve specified for each region are saved.

Description

Infrared camera calibration method and infrared camera calibration system {CALIBRATION METHOD OF INFRARED CAMERA AND CALIBRATION SYSTEM OF INFRARED CAMERA}

Various aspects and embodiments of the present disclosure relate to a method for calibrating an infrared camera and a system for calibrating an infrared camera.

For example, in the following patent document 1, the conversion table showing the correspondence relationship between the temperature and the resistance value by setting the electrostatic chuck to a different temperature and measuring the resistance value of the heaters arranged in each region of the electrostatic chuck at each temperature. Disclosed is a method of writing. The temperature of the electrostatic chuck is measured using an infrared (IR) camera. By referring to the created conversion table, the temperature of each region of the electrostatic chuck can be estimated from the resistance value of the heater disposed in each region.

Japanese Patent Publication No. 2017-228230

The present disclosure provides an infrared camera calibration method and an infrared camera calibration system that can improve the accuracy of temperature measurement by an infrared camera.

One aspect of the present disclosure, as a calibration method of an infrared camera, includes an acquisition process, a calibration value calculation process, an interpolation curve specifying process, and a storage process. In the acquisition process, the placement table on which the substrate is placed is set at a plurality of different temperatures, and at each temperature, a measurement value of the radiation amount of infrared radiation from each of the plurality of regions of the upper surface of the placement table is acquired by an infrared camera. In the correction value calculation process, at each temperature, a difference between the measured value of the reference region, which is the region where the temperature sensor is provided, and the measured value of the other region is calculated as the correction value. In the interpolation curve specifying step, for each region, an interpolation curve indicating the tendency of the change of the correction value with respect to the measured value of the reference region is specified. In the storage step, parameters that define the interpolation curve specified for each region are saved.

According to various aspects and embodiments of the present disclosure, the measurement accuracy of temperature by an infrared camera can be improved.

1 is a system configuration diagram showing an example of a processing system according to an embodiment of the present application.
2 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus according to the first embodiment.
It is a figure which shows an example of the division mode of the area|region of an electrostatic chuck.
4 is a block diagram showing an example of the configuration of a control device.
5 is a diagram showing an example of a conversion table.
6 is a flowchart showing an example of a temperature control process.
7 is a schematic cross-sectional view showing an example of a configuration of a processing apparatus when creating a conversion table in the first embodiment.
8 is a view showing an example of a zone photographed with an IR camera.
9 is a flowchart showing an example of the IR camera calibration process.
10 is a flowchart showing an example of the processing in the acquisition process.
11 is a flowchart showing an example of processing in the calibration value calculation process.
12 is a diagram showing an example of a correction value table.
13 is a flowchart showing an example of processing in the interpolation curve specifying process.
14 is a view for explaining an example of a specific process of the coefficient of the interpolation curve.
15 is a diagram showing an example of a coefficient table.
16 is a flowchart showing an example of a temperature measurement process.
It is a figure which shows an example of the measurement result of the temperature distribution of each zone in a comparative example.
18 is a diagram showing an example of a measurement result of temperature distribution in each zone.
19 is a flowchart showing an example of the conversion table creation process.
20 is a schematic cross-sectional view showing an example of a configuration of a processing apparatus when creating a conversion table in the second embodiment.
21 is a diagram showing an example of the arrangement of the temperature sensor provided on the measurement substrate.
22 is a diagram showing an example of a hardware configuration of a control device.

Hereinafter, embodiments of the disclosed infrared camera calibration method and infrared camera calibration system will be described in detail with reference to the drawings. In addition, according to the following embodiments, the disclosed infrared camera calibration method and the infrared camera calibration system are not limited.

By the way, in the IR camera, the measured value of the temperature fluctuates due to the change in temperature or the aging change of the IR camera itself. In addition, individual differences exist in measured values of temperature even between different IR cameras. When the temperature measured by the IR camera is non-uniform, the precision of the conversion table indicating the correspondence between the resistance value of the heater and the temperature decreases. Thereby, the precision of the temperature of each area estimated from the resistance value of the heater arrange|positioned in each area of an electrostatic chuck falls.

Therefore, the present disclosure provides a technique capable of improving the measurement accuracy of temperature by an infrared camera.

<First embodiment>

[Configuration of the processing system 10]

1 is a system configuration diagram showing an example of a processing system 10 according to an embodiment of the present application. The processing system 10 is provided with the processing apparatus 100 and the control apparatus 200, for example, as shown in FIG. The processing apparatus 100 performs etching treatment using plasma on a substrate such as a semiconductor wafer. The control device 200 controls each part of the processing device 100 to execute a predetermined process on the processing device 100 on the substrate carried into the processing device 100.

[Configuration of processing device 100]

2 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus 100 according to the first embodiment. The processing apparatus 100 has a chamber 1 that is configured to be airtight, for example, as shown in FIG. 2. The chamber 1 is formed, for example, in a substantially cylindrical shape by aluminum or the like whose surface is covered with an anodized film. The chamber 1 is grounded.

In the chamber 1, a base material 2a formed of a conductive metal such as aluminum is provided. The base material 2a has a function of a lower electrode. The base material 2a is supported by the support 4 of the conductor provided on the insulating plate 3. Further, an edge ring 5 formed of, for example, single crystal silicon or the like is provided on the outer circumference above the base material 2a. The edge ring 5 is sometimes called a focus ring. A cylindrical inner wall member 3a made of, for example, quartz or the like is provided around the base 2a and the support 4 so as to surround the base 2a and the support 4.

Above the substrate 2a, a shower head 16 having a function as an upper electrode is provided so as to face substantially parallel to the substrate 2a, that is, to face the substrate W disposed on the substrate 2a. It is prepared. The shower head 16 and the substrate 2a function as a pair of electrodes (upper electrode and lower electrode). A high frequency power supply 12a is connected to the base material 2a via a matching unit 11a. In addition, a high frequency power supply 12b is connected to the base material 2a via a matching unit 11b.

The high frequency power supply 12a supplies high frequency power of a predetermined frequency (for example, 100 MHz) used for generating plasma to the base material 2a. In addition, the high frequency power supply 12b is a high frequency power of a predetermined frequency used for the insertion (bias) of ions, and the high frequency power of a lower frequency (for example, 13 MHz) than the high frequency power supply 12a is provided to the base material 2a. To supply. Control of the on and off of the high frequency power supplies 12a and 12b, and the high frequency power supplied by the high frequency power supplies 12a and 12b, etc. are controlled by the control device 200.

An electrostatic chuck 6 for adsorbing and holding the substrate W and heating the substrate W is provided on the upper surface of the substrate 2a. The electrostatic chuck 6 has an insulator 6b, an electrode 6a provided between the insulator 6b, and a plurality of heaters 6c. The electrode 6a is connected to the DC power supply 13. The heater 6c is connected to the control device 200. The electrostatic chuck 6 generates a Coulomb force on the surface of the electrostatic chuck 6 by the DC voltage applied from the DC power source 13, and adsorbs the substrate W to the upper surface of the electrostatic chuck 6 by the Coulomb force. Keep it. The on/off of the DC power supply 13 is controlled by the control device 200.

Further, the electrostatic chuck 6 heats the substrate W by the heater 6c heated with electric power supplied from the control device 200. The upper surface of the electrostatic chuck 6 is divided into a plurality of areas, and each area is further divided into a plurality of zones. One heater 6c is provided in each zone. The electrostatic chuck 6 and the base material 2a are examples of the placement table, and the upper surface of the electrostatic chuck 6 is an example of the upper surface of the placement table.

Further, a plurality of convex portions are formed on the upper surface of the electrostatic chuck 6, and the substrate W is supported by the plurality of convex portions. A heat transfer gas, which will be described later, is supplied between the plurality of convex portions.

In the base material 2a below each area in the electrostatic chuck 6, a temperature sensor 7 for measuring the temperature of the electrostatic chuck 6 in the area is provided. In the present embodiment, the temperature sensor 7 is, for example, a fluorescent optical fiber thermometer. The temperature sensor 7 measures the temperature of the electrostatic chuck 6 from below the electrostatic chuck 6 and outputs the measured temperature to the control device 200.

A flow path 2b through which a heat medium flows is formed inside the base material 2a, and a chiller unit 33 for controlling the temperature of the heat medium is connected to the flow path 2b via piping 2c and 2d. . As the heat medium supplied from the chiller unit 33 circulates in the flow path 2b, the temperature of the substrate 2a is controlled by heat exchange with the heat medium. The temperature of the heat medium supplied by the chiller unit 33 is controlled by the control device 200.

In addition, the base 2a is provided with a pipe 32 for supplying a heat transfer gas (back side gas) such as helium gas between the electrostatic chuck 6 and the substrate W so as to penetrate the base 2a. . The pipe 32 is connected to the heat transfer gas supply part 31. The pressure of the heat transfer gas that passes through the pipe 32 from the heat transfer gas supply unit 31 and is supplied between the electrostatic chuck 6 and the substrate W is controlled by the control device 200.

The temperature of the heat medium flowing through the flow path 2b, the power supplied to each heater 6c in the electrostatic chuck 6, and the pressure of the heat transfer gas supplied between the electrostatic chuck 6 and the substrate W are controlled. Thereby, the temperature of the substrate W on the electrostatic chuck 6 is controlled to a temperature within a predetermined range.

The shower head 16 is provided on the upper part of the chamber 1. The shower head 16 is provided with a main body portion 16a and an upper top plate 16b, and is supported on the upper portion of the chamber 1 through an insulating member 45. The main body portion 16a is formed of, for example, aluminum on which the surface is subjected to anodizing treatment, and supports the upper top plate 16b detachably thereunder. The upper top plate 16b is formed of, for example, a silicon-containing material such as quartz.

A diffusion chamber 16c is formed inside the main body 16a. A plurality of gas outlets 16e are formed at the bottom of the body portion 16a so as to be located under the diffusion chamber 16c. The upper top plate 16b is provided with a plurality of gas discharge ports 16f to penetrate the upper top plate 16b in the thickness direction, and each gas discharge port 16f communicates with the gas outlet 16e described above. With this configuration, the process gas supplied to the diffusion chamber 16c is diffused in the diffusion chamber 16c, and is shower-shaped in the chamber 1 through each gas outlet 16e and gas outlet 16f. Is supplied. Further, the main body portion 16a or the like is provided with a temperature regulator such as a heater (not shown) or a pipe (not shown) for circulating a heat medium, so that the shower head 16 is within a desired range during processing of the substrate W. It can be controlled by temperature.

A gas introduction port 16g for introducing a processing gas into the diffusion chamber 16c is formed in the body portion 16a. The gas introduction port 16g is connected with a process gas supply source 15 for supplying a process gas used for the processing of the substrate W via a pipe 15b. A valve V and a mass flow controller (MFC) 15a are provided in the pipe 15b. The processing gas supplied from the processing gas supply source 15 is supplied into the diffusion chamber 16c of the shower head 16 via a pipe 15b, and is interposed through each gas outlet 16e and gas outlet 16f. Is supplied into the chamber 1. The valve V and the MFC 15a are controlled by the control device 200.

The variable DC power source 42 is electrically connected to the shower head 16 via a low-pass filter (LPF) 40 and a switch 41. The switch 41 controls supply and interruption of the DC voltage from the variable DC power source 42 to the shower head 16. The current and voltage of the variable DC power source 42 and the on and off of the switch 41 are controlled by the control device 200. For example, when high-frequency power is supplied from the high-frequency power sources 12a and 12b to the substrate 2a to generate plasma in the chamber 1, the switch 41 is turned on by the control device 200 as necessary. As a result, a direct current voltage of a predetermined size is applied to the shower head 16.

An exhaust port 71 is formed at the bottom of the chamber 1. An exhaust device 73 is connected to the exhaust port 71 via an exhaust pipe 72. The exhaust device 73 has a vacuum pump, and by operating the vacuum pump, the inside of the chamber 1 can be depressurized to a predetermined degree of vacuum. The exhaust flow rate or the like of the exhaust device 73 is controlled by the control device 200. In addition, an opening 74 for bringing in and taking out the substrate W is formed on the sidewall of the chamber 1, and a gate valve G for opening and closing the opening 74 is provided in the opening 74. .

A sediment shield 76 is detachably provided on the inner wall of the chamber 1 along the surface of the inner wall. Further, a sediment shield 77 is disposed on the outer circumferential surface of the inner wall member 3a to cover the inner wall member 3a. Sediment shields 76 and 77 prevent etch byproducts (sediments) from adhering to the inner wall of chamber 1. In addition, a conductive member (GND block) 79 connected to the ground by DC is provided at a position of the sediment shield 76 of approximately the same height as the substrate W adsorbed and held on the electrostatic chuck 6. The abnormal discharge in the chamber 1 is suppressed by the conductive member 79.

In addition, a ring magnet 9 is arranged around the chamber 1 in a concentric shape. The ring magnet 9 forms a magnetic field in the space between the shower head 16 and the substrate 2a. The ring magnet 9 is rotatably held by a rotating mechanism (not shown).

[Partition sun of the area of the electrostatic chuck 6]

FIG. 3 is a diagram showing an example of a division mode of the region of the electrostatic chuck 6. The upper surface of the electrostatic chuck 6 is, for example, divided into a plurality of areas in a concentric circle shape around the center position O of the electrostatic chuck 6 as shown in FIG. 3. Hereinafter, the area including the center position O and the area adjacent to the area are area A, the area adjacent to area A is area B, the area adjacent to area B is area C, and the outermost area is area D. Is written. One temperature sensor 7 is provided in each area.

In addition, each area is divided into a plurality of zones 60 in the circumferential direction of the circle centering on the central position O. In the example of FIG. 3, the area adjacent to the area including the center position O in area A is three zones 60, area B is three zones 60, and area C is four zones ( At 60), the area D is divided into four zones 60, respectively. In addition, the division mode of the area of the electrostatic chuck 6 is not limited to the embodiment illustrated in FIG. 3.

One heater 6c is disposed inside the electrostatic chuck 6 corresponding to each zone 60. The electric power supplied to the heater 6c provided in each zone 60 is independently controlled by the control device 200.

[Configuration of control device 200]

4 is a block diagram showing an example of the control device 200. The control device 200 includes a plurality of power supply units 20-1 to 20-n, a measurement unit 24, a control unit 25, and a holding unit 26, as shown in FIG. 4, for example. In the following, in the case where the plurality of power supply units 20-1 to 20-n are collectively referred to without distinction, the power supply unit 20 is described.

Each power supply unit 20 is provided one for each heater 6c provided in the zone 60 of the electrostatic chuck 6, and supplies power to the corresponding heater 6c. In the present embodiment, 15 heaters 6c are provided in the electrostatic chuck 6, and 15 power supply units 20 are provided in the control device 200 corresponding to the number of heaters 6c. Each power supply 20 has a switch (SW) 21, an ammeter 22, and a voltmeter 23.

The SW 21 turns on and off according to the control from the control unit 25, and supplies the electric power supplied from the AC power supply 27 to the corresponding heater 6c during the on period. The ammeter 22 measures the instantaneous value of the AC current supplied from the AC power supply 27 to the corresponding heater 6c and outputs it to the measurement unit 24. The voltmeter 23 measures the instantaneous value of the AC voltage supplied from the AC power supply 27 to the corresponding heater 6c and outputs it to the measurement unit 24.

The measurement unit 24 measures the resistance value of each heater 6c based on the measured values of voltage and current output from each power supply unit 20 to the heater 6c. Then, the measurement unit 24 outputs the resistance value measured for each heater 6c to the control unit 25.

The holding unit 26 holds a recipe indicating the processing conditions of the substrate W, a conversion table 260, a calibration value table 261, a coefficient table 262, and the like. 5 is a diagram showing an example of the conversion table 260. In the conversion table 260, an individual table 2601 is stored for each zone ID 2600 that identifies the zone 60 in which each heater 6c is provided. In each individual table 2601, the resistance value of the heater 6c is stored in correspondence with the temperature.

The recipe stored in the holding portion 26 includes information on the target temperature of each zone 60 for each step. The details of the correction value table 261 and the coefficient table 262 will be described later. The recipe is prepared in advance by the administrator of the processing system 10 or the like and stored in the holding unit 26. The calibration value table 261 and the coefficient table 262 are created in the calibration process described later. The conversion table 260 is created in a creation process described later.

The control part 25 controls each part of the processing apparatus 100 based on the recipe held in the holding part 26. In addition, in each process of processing, the control unit 25 controls the electric power supplied to the heater 6c provided in each zone 60 of the electrostatic chuck 6, thereby providing a substrate (disposed on the electrostatic chuck 6) Control so that the temperature of W) becomes the target temperature indicated by the recipe. In addition, the control unit 25 performs calibration processing of the IR camera 51 to be described later, and creation processing of the conversion table 260.

[Temperature control processing]

6 is a flowchart showing an example of a temperature control process. For example, when the control apparatus 200 starts a process based on a recipe, it starts the temperature control process shown in this flowchart. In addition, information such as a conversion table 260 and a recipe is previously stored in the holding unit 26.

First, the control unit 25 starts to supply power to each heater 6c by controlling the SW 21 in each power supply unit 20 (S100). And the measurement unit 24 is based on the instantaneous value of the alternating current measured by each ammeter 22 and the instantaneous value of the alternating voltage measured by each voltmeter 23, and the heater 6c for each zone 60. The resistance value is measured (S101). The measuring unit 24 averages the resistance value measured a plurality of times during a predetermined period (for example, several seconds) in each heater 6c, and outputs the averaged resistance value to the control unit 25.

Subsequently, the control unit 25 refers to the conversion table 260 in the holding unit 26 for each zone 60, and sets the temperature corresponding to the resistance value of the heater 6c provided in the zone 60 to the zone 60. It is estimated as the temperature of) (S102). Then, the control unit 25 controls the ratio of the on and off of the SW 21 in the power supply unit 20 in accordance with the difference between the estimated temperature and the target temperature, for each zone 60, to the heater 6c. The supplied power is controlled (S103).

Subsequently, the control unit 25 refers to the recipe and determines whether or not the processing has ended (S104). If the processing has not been completed (S104: No), the measurement unit 24 again executes the processing shown in step S101. On the other hand, when the process is ended (S104: Yes), the control device 200 ends the temperature control process shown in this flowchart.

Here, if the temperature of each zone 60 is measured by providing a temperature sensor in the substrate 2a for each zone 60 of the electrostatic chuck 6, a space for placing the temperature sensor is required in the substrate 2a Is done. Further, when the temperature distribution of the electrostatic chuck 6 is more precisely controlled, the electrostatic chuck 6 is divided into more zones 60. For this reason, more temperature sensors are arranged in the substrate 2a depending on the number of zones 60. When the number of temperature sensors disposed in the base material 2a increases, it becomes difficult to downsize the base material 2a. In addition, when the number of temperature sensors disposed in the substrate 2a increases, the structure of the substrate 2a becomes complicated, and the degree of freedom in design also decreases.

In contrast, in the processing system 10 of the present embodiment, the temperature of each zone 60 is estimated based on the resistance value of the heater 6c provided for each zone 60 in the electrostatic chuck 6. Thereby, it is not necessary to arrange the temperature sensor in the base material 2a, and the size of the base material 2a can be reduced. In addition, since the number of temperature sensors disposed in the substrate 2a can be reduced, the structure of the substrate 2a can be simplified, and the degree of freedom in design can be improved.

[Create conversion table 260]

In order to perform temperature control of each heater 6c, it is necessary to prepare the conversion table 260 shown in FIG. 5 in advance, for example. Hereinafter, a method of creating the conversion table 260 will be described. The conversion table 260 is created by, for example, the processing device 100 having a configuration as shown in FIG. 7. 7 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus 100 when creating the conversion table 260 in the first embodiment. The processing system 10 including the processing apparatus 100 and the control apparatus 200 when creating the conversion table 260 illustrated in FIG. 7 is an example of a calibration system.

When creating the conversion table 260, for example, as shown in FIG. 7, the shower head 16 described using FIG. 2 is separated from the chamber 1, so that the calibration unit 50 is placed in the chamber 1 ). Incidentally, except for the points described below, in FIG. 7, members having the same reference numerals as those in FIG. 2 have the same or the same functions as those in FIG. 2, and thus descriptions thereof will be omitted.

The calibration unit 50 has an infrared (IR) camera 51 and a cover member 52. The cover member 52 supports the IR camera 51 so that the photographing direction of the IR camera 51 faces the direction of the electrostatic chuck 6. The IR camera 51 measures the distribution of the amount of infrared radiation emitted from the top surface of the electrostatic chuck 6. Hereinafter, the measured value of the infrared radiation amount is described as an IR value. Then, the IR camera 51 outputs information indicating the distribution of the measured IR value to the control device 200.

The area of the zone 60 in the image captured by the IR camera 51 includes a plurality of pixels 62, as shown in FIG. 8, for example. 8 is a diagram showing an example of the zone 60 photographed by the IR camera 51. An IR value is associated with each pixel 62. In the present embodiment, the control unit 25 of the control device 200 divides each zone 60 into a plurality of divided zones 61, and for each divided zone 61, the pixels of the pixels in the divided zone 61. The IR value is averaged, and the averaged IR value is used as the IR value of the division zone 61.

Further, a plurality of convex portions are formed on the upper surface of the electrostatic chuck 6. There is some thermal gradient between the tip of the convex portion and the upper surface of the electrostatic chuck 6. For this reason, a slight temperature difference occurs between the tip of the convex portion and the upper surface of the electrostatic chuck 6. Since the temperature of each divided zone 61 corresponds to the average value of the IR values measured in the divided zone 61, if the difference in the number of convex portions between the divided zones 61 is large, the temperature of the entire electrostatic chuck 6 Even if is uniform, the temperature to be measured differs between the division zones 61. For this reason, it is preferable that each division zone 61 is arrange|positioned so that the difference of the number of the convex parts contained in the division zone 61 between the division zones 61 becomes small.

Here, in the IR camera 51, the measured IR value fluctuates depending on the change in temperature or the secular change of the IR camera 51 itself. In addition, individual differences exist in IR values measured even between different IR cameras 51. When a non-uniformity occurs in the IR value measured by the IR camera 51, it becomes difficult to measure the temperature of each zone 60 correctly. For this reason, the precision of the conversion table 260 showing the correspondence relationship between the resistance value of the heater 6c of each zone 60 and the temperature is lowered. Thereby, the estimation precision of the temperature of each zone 60 estimated from the resistance value of the heater 6c arrange|positioned in each zone 60 of the electrostatic chuck 6 falls.

Therefore, in the present embodiment, the IR camera 51 is corrected before the conversion table 260 is created, and the conversion table 260 is created using the corrected IR camera 51. The correction processing of the IR camera 51 will be described below.

[Calibration process of IR camera 51]

9 is a flowchart showing an example of the calibration processing of the IR camera 51. The calibration process illustrated in FIG. 9 is realized by the control device 200 controlling each part of the IR camera 51 and the processing device 100. In addition, the calibration process of the IR camera 51 is, for example, in the inspection of the IR camera 51 after calibration, when the inspection result does not fall within a predetermined reference value in one inspection or for a predetermined period (for example, Every few days to months).

In the calibration process, first, the control unit 25 executes an acquisition process (S200). In the acquisition process, the electrostatic chuck 6 on which the substrate W is disposed is set at a plurality of different temperatures, and each divided zone of the upper surface of the electrostatic chuck 6 measured by the IR camera 51 at each temperature. The IR value of (61) is obtained.

Subsequently, the control unit 25 executes a calibration value calculation process (S300). In the correction value calculation process, at each temperature, the difference between the IR value of the reference region, which is the divided zone 61 in which the temperature sensor 7 is provided, and the IR value of the other divided zone 61 is calculated as the correction value.

Subsequently, the control unit 25 executes an interpolation curve specifying process (S400). In the interpolation curve specifying step, an interpolation curve indicating the tendency of the change of the correction value with respect to the IR value of the reference region is specified for each division zone 61.

[Acquisition process]

10 is a flowchart showing an example of the processing in the acquisition process.

First, the control unit 25 controls the chiller unit 33 to set the set value T _C of the temperature of the heat medium to the first temperature T _min (S201). The first temperature T _min is, for example, 0°C. Further, the first temperature T _min may be a temperature lower than 0°C, or a temperature higher than 0°C. Then, the control unit 25 waits a predetermined time until the temperature of the electrostatic chuck 6 stabilizes (S202).

Subsequently, the control unit 25 acquires the IR value of the upper surface of the electrostatic chuck 6 measured by the IR camera 51 (S203). An IR value is associated with each pixel in the image captured by the IR camera 51. Then, the control unit 25 determines whether or not the set value T _C of the temperature of the thermal medium is equal to or greater than the second temperature T _max (S204). The second temperature T _max is, for example, 80°C. Further, the second temperature T _max may be a temperature lower than 80°C, or a temperature higher than 80°C.

When the set value T _C of the temperature of the heat medium is less than the second temperature Tmax (S204: No), the control unit 25 sets the set value T _C of the temperature of the heat medium to a predetermined temperature (ΔT ₁ ). It is raised (S205), and the process shown in step S202 is executed again. The predetermined temperature (ΔT ₁ ) is, for example, 10°C. In addition, the predetermined temperature (ΔT ₁ ) may be a temperature lower than 10°C, or a temperature higher than 10°C.

On the other hand, when the set value T _C of the temperature of the thermal medium is equal to or greater than the second temperature T _max (S204: Yes), the control unit 25 ends the processing of the acquisition process shown in this flowchart. Thereby, IR values of each pixel corresponding to different temperatures are obtained.

[Calibration value calculation process]

11 is a flowchart showing an example of processing in the calibration value calculation process. The processing of the correction value calculation process shown in Fig. 11 is processing performed using data of the distribution of the IR value of each pixel for each temperature acquired in the acquisition process.

First, the control unit 25 sets the set value T _C of the temperature of the thermal medium to the first temperature T _min (S301). Then, the control unit 25 selects an IR value corresponding to the set value T _C from the data acquired in the acquisition process (S302).

Subsequently, the control unit 25 selects one unselected area, and extracts an IR value corresponding to the selected area from the IR values selected in step S302 (S303).

Subsequently, the control unit 25 selects one unselected zone 60 from the areas selected in step S303, and extracts an IR value corresponding to the selected zone 60 from the IR values selected in step S303. (S304).

Subsequently, the control unit 25 calculates the average value IR _A of the IR values for each of the divided zones 61 in the zone 60 selected in step S304 using the IR value extracted in step S304 (S305). ).

Subsequently, the control unit 25 determines whether all the zones 60 in the area selected in step S303 are selected (S306). When the unselected zone 60 is present (S306: No), the process shown in step S304 is executed again.

On the other hand, when all the zones 60 are selected (S306: Yes), the control unit 25 calculates the correction value C for each divided zone 61 (S307). Then, the control unit 25 stores the calculated correction value C in correspondence with IR _S in the correction value table 261 to be described later (S308).

Correction value (C) of each partition zone (61), the average value of the IR value of the division zone is divided zones 61 arranged with IR _A of 61, the temperature sensor 7 in the area selected in step (S303) It is calculated by the following formula (1) using phosphorus IR _S , for example.

Subsequently, the control unit 25 determines whether all areas have been selected (S309). If there is an unselected area (S309: No), the process shown in step S303 is executed again.

On the other hand, when all areas are selected (S309: Yes), the control unit 25 determines whether or not the set value T _C of the temperature of the thermal medium is equal to or greater than the second temperature T _max (S310). When the set value (T _C ) of the temperature of the heat medium is less than the second temperature (T _max ) (S310: No), the control unit 25 sets the set value (T _C ) of the temperature of the heat medium to a predetermined temperature (ΔT _{1 ).} ) It is raised (S311), and the process shown in step S302 is executed again.

On the other hand, when the set value T _C of the temperature of the thermal medium is equal to or greater than the second temperature T _max (S310: Yes), the control unit 25 ends the processing of the correction value calculation process shown in this flowchart. Thereby, the correction value table 261 of the data structure as shown in FIG. 12 is stored in the holding part 26, for example. 12 is a diagram showing an example of the correction value table 261. In the correction value table 261, a separate table 2611 is stored for each divided zone ID 2610 that identifies each divided zone 61. In each individual table 2611, a correction value C is stored in correspondence with IR _S.

[Interpolation curve specific process]

13 is a flowchart showing an example of processing in the interpolation curve specifying process. The processing of the interpolation curve specifying process shown in Fig. 13 is processing performed using the data of the correction value table 261 stored in the processing of the correction value calculation process.

First, the control unit 25 selects one unselected partition zone 61, and extracts IR _S and correction values C corresponding to the selected partition zone 61 from the correction value table 261 (S400). ). Then, the control unit 25 uses the extracted IR _S and the correction value C to specify the coefficient of the interpolation curve indicating the trend of the change in the correction value C for the IR _S (S401).

14 is a view for explaining an example of a specific process of the coefficient of the interpolation curve. The control unit 25 plots, for example, the correction value C extracted in step S400 as data 80 on the xy coordinate plane with IR _S as the x-axis and correction value C as the y-axis. Then, an interpolation curve 81 indicating the tendency of the plotted data 80 is specified. In this embodiment, the interpolation curve 81 is a quadratic curve represented by the following formula (2).

A, b and c in the formula (2) are coefficients of the interpolation curve 81. Coefficients a, b and c are examples of parameters of the interpolation curve 81. Further, the interpolation curve 81 may be a curve of order 3 or higher. In addition, the control unit 25 may specify an approximate straight line instead of the interpolation curve 81 as a line segment indicating the tendency of the plotted data 80.

Subsequently, the control unit 25 stores the coefficients a, b and c of the interpolation curve 81 shown in Equation (2) in the coefficient table 262 to be described later (S402). Step S402 is an example of a preservation process.

Subsequently, the control unit 25 determines whether all of the divided zones 61 are selected (S403). When the unselected partition zone 61 is present (S403: No), the process shown in step S400 is executed again.

On the other hand, when all of the divided zones 61 are selected (S403: Yes), the control unit 25 ends the processing of the interpolation curve specifying process shown in this flowchart. Thereby, the coefficient table 262 of the data structure as shown in FIG. 15 is stored in the holding part 26, for example. 15 is a diagram showing an example of a coefficient table 262 according to an embodiment of the present application. In the coefficient table 262, the values of the coefficients a, b and c of the interpolation curve are stored in correspondence with the divided zone IDs that identify each divided zone 61.

[Temperature measurement processing]

Next, the process of measuring the temperature of each division zone 61 on the electrostatic chuck 6 from the image picked up by the IR camera 51 using the counting table 262 created by the calibration process will be described. 16 is a flowchart showing an example of a temperature measurement process. The temperature measurement processing illustrated in FIG. 16 is realized by the control device 200 controlling each part of the IR camera 51 and the processing device 100.

First, the control unit 25 acquires data of the temperature T _S from the temperature sensors 7 disposed in each area of the electrostatic chuck 6 (S500 ). Then, the control unit 25 acquires the IR values of all the division zones 61 of the electrostatic chuck 6 from the IR camera 51 (S501). Then, the control unit 25 calculates the average value IR _A of the IR values for each division zone 61 (S502).

Subsequently, the control unit 25 selects one unselected area, and extracts IR _A of the divided zone 61 included in the selected area from among the IR _A calculated in step S502 (S503).

Then, the controller 25 is to calibrate the IR _A in each partition zone (61) included in the area selected in step (S503) calculates the IR _A '(S504). Specifically, the control unit 25 extracts IR _A of the divided zone 61 in which the temperature sensor 7 is disposed, as IR _S , among the IR _A of the divided zone 61 included in the area selected in step S503. . Then, the control unit 25 extracts the coefficient of the interpolation curve from the coefficient table 262 for each division zone 61 included in the area selected in step S503. Then, the control unit 25 specifies the correction value C corresponding to the IR _S on the interpolation curve corresponding to the extracted coefficient, for each division zone 61. The control unit 25 is divided for each zone (61), using the following equation (3), and calculates the IR _A 'after correction.

Thereby, the measurement error of the IR camera 51 for each division zone 61 can be corrected, and the precision of the IR value of the division zone 61 can be improved.

Subsequently, the control unit 25 includes IR _A ', the temperature T _S of the temperature sensor 7 in the area, and the temperature sensor 7 in each division zone 61 in the area selected in step S503. Using the IR _S of the divided zones 61 arranged, the temperature T _D of the divided zones 61 is calculated (S505). The control unit 25 calculates the temperature T _D of each divided zone, for example, using the following equation (4).

Subsequently, the control unit 25 determines whether all areas have been selected (S506). If there is an unselected area (S506: No), the control unit 25 again executes the processing shown in step S503. On the other hand, when all the areas are selected (S506: Yes), the control unit 25 again executes the processing shown in step S500.

[Experiment result]

17 is a diagram showing an example of the measurement result of the temperature distribution in each zone 60 in the comparative example. 18 is a diagram showing an example of the measurement result of the temperature distribution in each zone 60 in the present embodiment. In the experiment, the chiller unit 33 was controlled so that the temperature of the heat medium flowing in the substrate 2a became 80°C. In addition, in the experiment, power supply to each heater 6c is stopped. Since the temperature of the heat medium flowing in the base material 2a is 80°C, the temperature of the upper surface of the electrostatic chuck 6 is also uniformly about 80°C. In addition, in FIGS. 17 and 18, the average of the measured values of the temperature of the divided zones 61 included in each zone 60 is plotted as the temperature of the zones 60.

In the comparative example, the IR value measured by the IR camera 51 is used as it is, and the temperature of each zone 60 is measured. In the comparative example, for example, as shown in FIG. 17, the measured value of the temperature of the zone 60 in each area is non-uniform. In the comparative example, the non-uniformity of the measured value of the temperature of the zone 60 in the area D was the largest, and the difference between the maximum value and the minimum value was about 1.18°C.

On the other hand, in this embodiment, as shown in FIG. 18, for example, the range of the non-uniformity of the measured value of the temperature of the zone 60 in each area is much lower than the comparative example. In the example of Fig. 18, the non-uniformity of the measured value of the temperature of the zone 60 in the area D is the largest, but the difference between the maximum value and the minimum value is about 0.09°C.

As described above, by correcting the IR value of the IR camera 51 using the counting table 262 specified by the calibration process of the IR camera 51, the accuracy of the temperature measurement of the IR camera 51 can be improved. .

[Process for creating conversion table 260]

19 is a flowchart showing an example of the creation process of the conversion table 260. The control apparatus 200 starts the processing shown in this flowchart when, for example, an instruction for creating the conversion table 260 is received from an administrator or the like of the processing system 10. In addition, in parallel with the creation processing of the conversion table 260 illustrated in FIG. 19, the temperature measurement processing illustrated in FIG. 16 is executed.

First, the control unit 25 sets the temperature T _E of the electrostatic chuck 6 to a predetermined temperature T ₁ by controlling the power supplied to the chiller unit 33 and each heater 6c (S600) ). The predetermined temperature T ₁ is, for example, 20°C. Further, the predetermined temperature T ₁ may be a temperature lower than 20°C, or a temperature higher than 20°C. Then, the control unit 25 waits for a predetermined time until the temperature of the electrostatic chuck 6 stabilizes (S601).

Subsequently, the control unit 25 selects one unselected zone 60 (S602). Then, the control unit 25, among the temperature T _D of each divided zone 61 measured by the temperature measurement process illustrated in FIG. 16, the divided zone 61 included in the zone 60 selected in step S602. ) To extract the temperature (T _D ). Then, the control unit 25 averages the temperature T _D of the extracted division zone 61 and sets the temperature T _Z of the zone 60 selected in step S602 (S603 ).

Subsequently, the measurement unit 24, based on the measured values of the voltage and current of the heater 6c output from the power supply unit 20, the resistance of the heater 6c disposed in the zone 60 selected in step S602. The value R is measured (S604). Then, the control unit 25 corresponds to the zone 60 selected in step S602, and converts the temperature T _Z specified in step S603 and the resistance value R calculated in step S604 into a conversion table. It is stored at 260 (S605).

Subsequently, the control unit 25 determines whether all the zones 60 have been selected (S606). If there is an unselected zone 60 (S606: No), the control unit 25 again executes the processing shown in step S602.

On the other hand, when all the zones 60 are selected (S606: Yes), the control unit 25 determines whether the temperature T _E of the electrostatic chuck 6 is equal to or greater than a predetermined temperature T ₂ (S607). The predetermined temperature T ₂ is, for example, 120°C. Further, the predetermined temperature T ₂ may be a temperature lower than 120°C, or a temperature higher than 120°C.

When the temperature T _E of the electrostatic chuck 6 is less than a predetermined temperature T ₂ (S607: No), the control unit 25 controls the power supplied to the chiller unit 33 and each heater 6c. , Raise the temperature T _E of the electrostatic chuck 6 to a predetermined temperature ΔT ₂ (S608). Then, the control unit 25 again executes the processing shown in step S601. The predetermined temperature (ΔT ₂ ) is, for example, 10°C. In addition, the predetermined temperature (ΔT ₂ ) may be a temperature lower than 10°C, or a temperature higher than 10°C.

On the other hand, when the temperature T _E of the electrostatic chuck 6 is equal to or greater than the predetermined temperature T ₂ (S607: Yes), the control unit 25 ends the creation process of the conversion table 260 shown in this flowchart. Thus, for example, the conversion table 260 illustrated in FIG. 5 is created.

The first embodiment has been described above. The calibration method of the IR camera 51 in this embodiment includes an acquisition process, a calibration value calculation process, an interpolation curve specifying process, and a storage process. In the acquisition process, the electrostatic chuck 6 on which the substrate W is disposed is set to a plurality of different temperatures, and at each temperature, a plurality of divided zones on the upper surface of the electrostatic chuck 6 by the IR camera 51. An IR value that is a measured value of the infrared radiation amount from each of 61) is obtained. In the correction value calculation process, at each temperature, the difference between the IR value of the reference region, which is the divided zone 61 in which the temperature sensor 7 is provided, and the IR value of the other region is calculated as the correction value C. In the interpolation curve specifying step, an interpolation curve indicating the tendency of the change of the correction value C with respect to the IR value of the reference region is specified for each division zone 61. In the storage step, parameters that define the interpolation curve specified for each division zone 61 are saved. By using the correction value on the interpolation curve based on the stored parameters, the measurement accuracy of the temperature by the IR camera 51 can be improved.

In addition, in the above-described embodiment, the IR camera 51 outputs an IR value for each pixel, and the IR value of each divided zone 61 is when the divided zone 61 is photographed by the IR camera 51. It is an average value of IR values in a plurality of pixels. Thereby, the calculation amount at the time of correcting an IR value can be reduced.

Further, in the above-described embodiment, a plurality of convex portions are formed on the surface of the electrostatic chuck 6 on the side where the substrate W is disposed, and each of the divided zones 61 is between the divided zones 61. , It is preferable to arrange|position so that the difference of the number of the convex parts contained in the division zone 61 becomes small. Thereby, the measurement precision of the temperature of each division zone 61 can be improved.

In addition, in the above-described embodiment, a flow path 2b through which the temperature-controlled heat medium flows is formed inside the substrate 2a, and in the acquisition step, by controlling the temperature of the heat medium flowing through the flow path 2b. , The temperature of the flow path 2b and the electrostatic chuck 6 is set. Thereby, the temperature of the whole electrostatic chuck 6 can be made uniform.

<Second embodiment>

In the above-described first embodiment, the IR value of each divided zone 61 was corrected based on the temperature T _S measured by the temperature sensor 7 provided in the substrate 2a. In contrast, in the present embodiment, the measurement substrate W'provided with a plurality of temperature sensors 70 is disposed on the electrostatic chuck 6, and the measurement substrate W'measured by the temperature sensor 70 is Based on the temperature T _S , the IR value of each division zone 61 is corrected. Thereby, the IR value of each division zone 61 is corrected based on the temperature distribution close to the temperature distribution of the actual substrate W, and the measurement accuracy of the temperature by the IR camera 51 can be further improved.

In the present embodiment, the conversion table 260 is created by, for example, the processing apparatus 100 having a configuration as shown in FIG. 20. 20 is a schematic cross-sectional view showing an example of the configuration of the processing apparatus 100 when creating the conversion table 260 in the second embodiment. The processing system 10 including the processing device 100 and the control device 200 illustrated in FIG. 20 is an example of a calibration system.

In the present embodiment, when creating the conversion table 260, as shown in, for example, FIG. 20, the shower head 16 is separated from the chamber 1, and the calibration unit 50 is the chamber 1 It is mounted on. Then, a measurement substrate W'having a plurality of temperature sensors 70 is disposed on the electrostatic chuck 6. In this embodiment, the IR value of each division zone 61 is corrected based on the temperature T _S of the measurement substrate W'measured by the temperature sensor 70. For this reason, the temperature sensor 7 does not need to be provided in the base material 2a for the purpose of correcting the IR value of each division zone 61. In the example of FIG. 20, the temperature sensor 7 is not provided in the base material 2a. Thereby, the size of the base material 2a can be further reduced, or the structure of the base material 2a can be simplified. In addition, except for the points described below, in Fig. 20, the members with the same reference numerals as in Fig. 2 or Fig. 7 have the same or the same functions as those in Fig. 2 or Fig. 7, and thus the explanation is omitted.

The cover member 52 supports the IR camera 51 so that the photographing direction of the IR camera 51 faces the direction of the measuring substrate W'disposed on the electrostatic chuck 6. The IR camera 51 measures the distribution of the amount of infrared radiation emitted from the upper surface of the measurement substrate W'. Then, the IR camera 51 outputs information indicating the distribution of the measured value of the measured amount of infrared radiation to the control device 200. Hereinafter, the measured value of the infrared radiation amount is described as an IR value. The IR value in this embodiment is a measurement value of the amount of infrared radiation emitted from the upper surface of the measurement substrate W'.

21 is a diagram showing an example of the arrangement of the temperature sensor 70 provided on the measurement substrate W'. The measurement substrate W'is provided with a plurality of temperature sensors 70. The temperature sensor 70 is, for example, a thermocouple or a resistance thermometer. The measurement substrate W'is disposed on the electrostatic chuck 6 so that the reference position of the measurement substrate W'coincides with the reference position of the electrostatic chuck 6. The reference position of the measurement substrate W'is, for example, the position O'of the central axis of the measurement substrate W'in a substantially disc shape. The reference position of the electrostatic chuck 6 is, for example, the position O of the central axis of the substantially cylindrical electrostatic chuck 6. When the measurement substrate W'is disposed on the electrostatic chuck 6, the plurality of temperature sensors 70, for example, as shown in FIG. 21, are the areas A to the upper surface of the electrostatic chuck 6 (A to The temperature sensor 70 is provided on the measurement substrate W'so that one temperature sensor 70 is provided at a position corresponding to each of D).

In the present embodiment, a plurality of temperature sensors 70 are embedded in the measurement substrate W'. Thereby, it is possible to prevent the infrared rays emitted from the surface of the measurement substrate W'in the direction of the IR camera 51 from being blocked by the temperature sensor 70. Further, a plurality of temperature sensors 70 are provided on the surface of the measurement substrate W', and the measurement substrate W'has an IR camera 51 having a surface of the measurement substrate W'provided with the temperature sensor 70. ) May be disposed on the electrostatic chuck 6 to face the side. Thereby, the temperature of the surface of the measurement board|substrate W'can be measured more accurately by the temperature sensor 70. As shown in FIG. Further, the measurement substrate W'provided with a plurality of temperature sensors 70 can be easily created. In addition, when the temperature sensor 70 is provided on the surface of the measurement substrate W', the IR value of infrared radiation emitted from the region on the measurement substrate W'where the temperature sensor 70 is provided is masked, and the temperature sensor ( It is preferable to substitute the interpolated value based on the IR value of the area around 70).

In addition, in this embodiment, at least one of the two main surfaces of the measurement substrate W'is coated with a material having a higher infrared emissivity than silicon. For example, a black material is applied to at least one of the two main surfaces of the measurement substrate W'. Further, if the material has a higher infrared emissivity than silicon, materials other than black, such as red or green, may be applied. In addition, the coating method of the measurement substrate W'is not limited to application, and a plate-shaped or thin-film material having a higher infrared emissivity than silicon is applied to at least one of the two main surfaces of the measurement substrate W'. It may be attached. In addition, a material having a higher infrared emissivity than silicon and a thermal conductivity equivalent to silicon may be used as the measurement substrate W'. As such a material, an anodized aluminum alloy etc. are mentioned, for example. Further, such a material or a material having equivalent properties may be processed in a plate-like or thin-film state, and may be attached to at least one of the two major surfaces of the measurement substrate W'. The measuring substrate W'is disposed on the electrostatic chuck 6 such that a surface coated with a material having a higher infrared emissivity than silicon faces the IR camera 51 side. Thereby, the IR camera 51 can efficiently receive infrared rays emitted from the measurement substrate W'.

Using the measured value of infrared radiation emitted from the measurement substrate W'as the IR value, measured by the temperature sensor 70 provided at a position on the measurement substrate W'corresponding to each area as the temperature T _S Since it is the same as 1st Embodiment except having used temperature, subsequent description is abbreviate|omitted.

The second embodiment has been described above. The calibration method of the IR camera 51 in this embodiment includes an acquisition process, a calibration value calculation process, an interpolation curve specifying process, and a storage process. In the acquisition process, the electrostatic chuck 6 on which the substrate W is disposed is set at a plurality of different temperatures. And at each temperature, it is a measured value of the amount of infrared radiation emitted from each of the plurality of division zones 61 on the upper surface of the measurement substrate W'disposed on the electrostatic chuck 6 by the IR camera 51. IR values are obtained. In the correction value calculation process, at each temperature, the IR value of the reference zone which is the division zone 61 corresponding to the position of the temperature sensor 70 provided on the measurement substrate W'is different from that of the division zone 61 The difference from the value is calculated as the correction value (C). In the interpolation curve specifying step, an interpolation curve indicating the tendency of the change of the correction value C with respect to the IR value of the reference region is specified for each division zone 61. In the storage step, parameters that define the interpolation curve specified for each division zone 61 are saved. By using the correction value on the interpolation curve based on the stored parameters, the measurement accuracy of the temperature by the IR camera 51 can be improved.

In addition, the processing system 10 which is an example of the calibration system in the present embodiment includes a chamber 1, an electrostatic chuck 6, a temperature sensor 70, an IR camera 51, and a control device 200. ). The electrostatic chuck 6 is provided in the chamber 1 to arrange the measurement substrate W'. The temperature sensor 70 is provided on the measurement substrate W', and measures the temperature of the measurement substrate W'. The IR camera 51 measures the amount of infrared radiation emitted from the upper surface of the measurement substrate W'disposed on the electrostatic chuck 6. The control device 200 executes an acquisition process, a calibration value calculation process, an interpolation curve specifying process, and a storage process. In the acquisition process, the electrostatic chuck 6 is set to a plurality of different temperatures, and at each temperature, a plurality of upper surfaces of the measurement substrate W'disposed on the electrostatic chuck 6 by the IR camera 51 are provided. IR values, which are measured values of the infrared radiation amount from each of the division zones 61, are obtained. In the calibration value calculation process, at each temperature, the difference between the IR value of the reference area that is the division zone 61 corresponding to the position of the temperature sensor 70 and the IR value of the other division zone 61 is the calibration value ( C). In the interpolation curve calculation process, an interpolation curve representing the tendency of the change of the correction value C with respect to the IR value of the reference region is calculated for each division zone 61. In the storage step, the parameters of the interpolation curve specified for each division zone 61 are saved. By using the correction value on the interpolation curve based on the stored parameters, the measurement accuracy of the temperature by the IR camera 51 can be improved.

In addition, in the calibration system in the present embodiment, at least one surface of the measurement substrate W'is coated with a material having a higher infrared emissivity than silicon, and the coated surface faces the IR camera 51 side. So as to be arranged on the electrostatic chuck 6. Thereby, the IR camera 51 can efficiently receive infrared rays emitted from the measurement substrate W'.

[hardware]

In addition, the control device 200 in each of the above-described embodiments is realized by, for example, hardware shown in FIG. 22. 22 is a diagram showing an example of a hardware configuration of the control device 200. The control device 200 includes a central processing unit (CPU) 201, a random access memory (RAM) 202, a read only memory (ROM) 203, and an auxiliary storage device 204. In addition, the control device 200 includes a communication interface (I/F) 205, an input/output interface (I/F) 206, and a media interface (I/F) 207.

The CPU 201 operates based on a program read from the ROM 203 or the auxiliary storage device 204 and developed on the RAM 202, and controls each unit. The ROM 203 stores a boot program executed by the CPU 201 when the control device 200 is started, a program dependent on hardware of the control device 200, and the like.

The auxiliary storage device 204 is, for example, a hard disk drive (HDD) or a solid state drive (SSD), and stores a program executed by the CPU 201 and data used by the program. The CPU 201 reads the program from the auxiliary storage device 204, loads it on the RAM 202, and executes the loaded program.

The communication I/F 205 communicates with the processing device 100 and the IR camera 51 via a communication line such as a local area network (LAN). The communication I/F 205 receives data from the processing device 100 and the IR camera 51 via the communication line, sends it to the CPU 201, and the data generated by the CPU 201 is interposed through the communication line. Then, it is transmitted to the processing apparatus 100 and the IR camera 51.

The CPU 201 controls input devices such as a keyboard and output devices such as a display through the input/output I/F 206. The CPU 201 acquires the signal input from the input device via the input/output I/F 206 and sends it to the CPU 201. Further, the CPU 201 outputs the generated data to the output device via the input/output I/F 206.

The media I/F 207 reads programs or data stored in the recording medium 208 and stores them in the auxiliary storage device 204. The recording medium 208 is, for example, a DVD (Digital Versatile Disc), an optical recording medium such as a phase change rewritable disk (PD), a magneto-optical recording medium such as a magneto-optical disk (MO), a tape medium, a magnetic recording medium or Semiconductor memory, and the like.

The CPU 201 realizes each function of the power supply unit 20, the measurement unit 24, and the control unit 25 by executing a program loaded on the RAM 202. In addition, data in the holding unit 26 is stored in the auxiliary storage device 204.

The CPU 201 reads the program loaded on the RAM 202 from the recording medium 208 and stores it in the auxiliary storage device 204, but as another example, acquires the program from another device via a communication line. It may be stored in the auxiliary storage device 204.

[etc]

In addition, the technique disclosed herein is not limited to the above-described embodiment, and numerous modifications are possible within the scope of the gist.

For example, in each of the above-described embodiments, each zone 60 is divided into a plurality of divided zones 61, and the average value of the IR values IR _A is corrected in units of the divided zones 61, The technique of the disclosure is not limited to this. For example, IR _A may be corrected in units of zones 60.

Further, in each of the above-described embodiments, one temperature sensor 7 or one temperature sensor 70 is provided in each area, but the technology of the disclosure is not limited thereto. As another example, two or more temperature sensors 7 or temperature sensors 70 may be provided in each area, or one of them may be provided for a plurality of areas.

In addition, in the above-described first embodiment, the fluorescence type optical fiber thermometer was described as an example of the temperature sensor 7, but the disclosed technology is not limited to this. The temperature sensor 7 may be a sensor other than a fluorescent optical fiber thermometer, such as a thermocouple, as long as it is a sensor capable of measuring temperature.

Further, in each of the above-described embodiments, the plasma etching apparatus has been described as an example of an apparatus for processing the substrate W, but the disclosed technique is not limited to this. If the processing device has a mechanism for controlling the temperature of the substrate W by the heater 6c when processing the substrate W, for example, the technology of the disclosure is applied to a film forming apparatus, a reforming apparatus, or a cleaning apparatus. can do.

Further, in each of the above-described embodiments, a capacitively coupled plasma (CCP) is used as an example of the plasma source, but the disclosed technology is not limited to this. As the plasma source, for example, inductively coupled plasma (ICP), microwave excited surface wave plasma (SWP), electron cycloton resonance plasma (ECP), or helicon wave excited plasma (HWP) may be used.

In addition, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. Indeed, the above-described embodiments can be implemented in various forms. In addition, the above-described embodiment may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the attached claims.

Claims (8)

An acquisition step of setting the placement table on which the substrate is placed at a plurality of different temperatures, and acquiring measurement values of the amount of infrared radiation from each of the plurality of areas of the upper surface of the placement table from the infrared camera at each temperature;
A calibration value calculation process for calculating a difference between the measured value of the reference region, which is the region where the temperature sensor is provided, and the measured value of the other region, as a correction value at each temperature;
An interpolation curve specifying process for specifying an interpolation curve representing a tendency of the change of the correction value with respect to the measured value of the reference region for each region;
And a preservation step of preserving the parameters of the interpolation curve specified for each region. According to claim 1,
The infrared camera outputs the measured value for each pixel,
The measurement method of each said area|region is the average value of the said measured value in a some pixel when the said area|region was imaged with the said infrared camera. The method of claim 1 or 2,
A plurality of convex portions are formed on the surface of the placing table on the side where the substrate is disposed.
Each of the regions is arranged between the regions so that the difference in the number of the convex portions included in the region is small. The method according to any one of claims 1 to 3,
A flow path through which a temperature-controlled thermal medium flows is formed inside the placement table,
In the acquisition process,
A method of calibrating an infrared camera in which the temperature of the placement table is set by controlling the temperature of the heat medium flowing in the flow path. Chamber,
A placement table provided in the chamber to place a substrate,
And a temperature sensor for measuring the temperature of a portion of the placement table,
An infrared camera that measures the amount of infrared radiation emitted from the top surface of the placement table;
controller
Have,
The control device,
An acquisition step of setting the placement table to a plurality of different temperatures, and acquiring measurement values of the amount of infrared radiation from each of a plurality of areas of the upper surface of the placement table by the infrared camera at each temperature;
A calibration value calculation process for calculating a difference between the measured value of the reference region, which is the region where the temperature sensor is provided, and the measured value of the other region, as a correction value at each temperature;
An interpolation curve calculation process for calculating an interpolation curve representing a tendency of the change of the correction value with respect to the measured value of the reference region for each region;
A preservation process of preserving the parameters defining the interpolation curve specified for each region, respectively.
Infrared camera calibration system running. The placement table on which the substrate is placed is set to a plurality of different temperatures, and the measurement values of the radiation amount of infrared radiation from each of the plurality of areas on the upper surface of the substrate placed on the placement table are acquired by an infrared camera at each temperature. Acquisition process to do,
A correction value calculation step of calculating a difference between the measured value of the reference region, which is the region corresponding to the position of the temperature sensor provided on the substrate, and the measured value of the other region as a correction value at each of the temperatures;
An interpolation curve specifying process for specifying an interpolation curve representing a tendency of the change of the correction value with respect to the measured value of the reference region for each region;
And a preservation step of preserving the parameters of the interpolation curve specified for each region. Chamber,
A placement table provided in the chamber to place a substrate,
A temperature sensor provided on the substrate and measuring the temperature of the substrate,
An infrared camera measuring an amount of infrared radiation emitted from an upper surface of the substrate disposed on the placing table;
controller
Have,
The control device,
Acquisition for setting the placement table to a plurality of different temperatures, and acquiring a measurement value of the amount of infrared radiation from each of a plurality of areas of the upper surface of the substrate placed on the placement table by the infrared camera at each temperature Fairness,
A calibration value calculation step of calculating a difference between the measured value of the reference area, which is the area corresponding to the position of the temperature sensor, and the measured value of the other area, as a calibration value at each of the temperatures,
An interpolation curve calculation process for calculating an interpolation curve representing a tendency of the change of the correction value with respect to the measured value of the reference region for each region;
An infrared camera calibration system that executes a preservation process that preserves the parameters of the interpolation curve specified for each region. The method of claim 7,
The substrate, at least one side is coated with a material having a higher emissivity of infrared rays than silicon, and the infrared camera calibration system is disposed on the placing table so that the coated side faces the infrared camera side.

Images