KR20190085704A - Semiconductor device - Google Patents

Abstract

The embodiment includes a first conductivity type semiconductor layer; A second conductivity type semiconductor layer; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the first conductivity type semiconductor layer and the active layer negative Al, the active layer including a well layer; And a barrier layer, wherein the composition ratio of the Al composition of the first conductivity type semiconductor layer to the Al composition of the well layer is 1: 0.33 to 1: 0.75.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

Embodiments relate to semiconductor devices.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, , Safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

In particular, a light emitting device that emits light in the ultraviolet wavelength range can be used for curing, medical use, and sterilization by curing or sterilizing action.

Recently, research on ultraviolet light emitting devices has been actively conducted, but ultraviolet light emitting devices are still difficult to implement.

An embodiment provides an ultraviolet semiconductor device.

Further, a semiconductor device excellent in light extraction efficiency is provided.

Further, a semiconductor device for preventing cracks is provided.

The problems to be solved in the embodiments are not limited to these, and the objects and effects that can be grasped from the solution means and the embodiments of the problems described below are also included.

A semiconductor device according to an embodiment includes a first conductive semiconductor layer; A second conductivity type semiconductor layer; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the first conductivity type semiconductor layer and the active layer negative Al, the active layer including a well layer; And a barrier layer, wherein a composition ratio of an Al composition of the first conductivity type semiconductor layer to an Al composition of the well layer is 1: 0.33 to 1: 0.75.

And a first control layer disposed under the first conductive type semiconductor layer,

Wherein the first control layer comprises:

A 1-1 control layer; And a 1-2 control layer disposed on the 1-1 control layer,

Wherein the Al composition of the first control layer is larger than the Al composition of the first control layer,

The composition ratio of the Al composition of the 1-1 control layer and the Al composition of the first conductivity type semiconductor layer may be 1: 0.27 to 1: 0.6.

The composition ratio of the Al composition of the 1-1 control layer and the Al composition of the well layer may be 1: 0.133 to 1: 0.30.

And a second control layer disposed between the active layer and the first conductive type semiconductor layer,

The second control layer includes: a 2-1 control layer; And a 2-2 control layer disposed on the 2-1 control layer, wherein the Al composition of the 2-2 control layer is larger than the Al composition of the 2-1 control layer, The composition ratio of the Al composition of the control layer and the Al composition of the well layer may be 1: 0.5 to 1: 0.8.

The composition ratio of the Al composition of the first conductivity type semiconductor layer and the Al composition of the second-first control layer may be 1: 0.5 to 1: 0.67.

And a first non-conductive semiconductor layer disposed under the first control layer, wherein the first non-conductive semiconductor layer may not include Al.

The thickness ratio of the thickness of the first control layer and the thickness of the first non-conductive semiconductor layer may be 1: 0.02 to 1: 0.1.

A third control layer disposed under the first non-conductive semiconductor layer; And a second non-conductive semiconductor layer disposed under the third control layer.

The third control layer includes: a 3-1 control layer; And a 2-2 control layer disposed on the 3-1 control layer, and the Al composition of the 3-2 control layer may be larger than the Al composition of the 3-1 control layer.

The first control layer may have a lattice constant greater than a lattice constant of the first non-conductive semiconductor layer and less than a lattice constant of the first conductive semiconductor layer.

According to the embodiment, an ultraviolet semiconductor device can be realized.

In addition, a semiconductor device having excellent light extraction efficiency can be manufactured.

In addition, a semiconductor device for preventing cracks can be manufactured.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a cross-sectional view of a semiconductor device according to an embodiment,
FIG. 2 is a photograph taken by a transmission electron microscope (TEM) of part A in FIG. 1,
3 is an enlarged view of a portion B in Fig. 2,
FIGS. 4 to 5 are photographs taken by an optical microscope of the semiconductor device according to Experimental Examples and Examples, respectively,
6 is a cross-sectional view of a semiconductor device according to another embodiment,
7 is a conceptual diagram of a semiconductor device according to an embodiment,
8 is a conceptual view of a semiconductor device package according to an embodiment.

The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated and described in the drawings. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terms including ordinal, such as second, first, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

The semiconductor structure according to the embodiment of the present invention can output light in the ultraviolet wavelength range. For example, the semiconductor structure may emit UV-A light at near-ultraviolet wavelength band, UV-B at ultraviolet wavelength band, UV-C at deep ultraviolet wavelength band, Can be output. The wavelength range can be determined by the composition ratio of Al of the semiconductor structure.

Illustratively, the near-ultraviolet light (UV-A) may have a wavelength in the range of 320 to 420 nm, the far ultraviolet light (UV-B) may have a wavelength in the range of 280 nm to 320 nm, The light of the wavelength band (UV-C) may have a wavelength in the range of 100 nm to 280 nm.

FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment, FIG. 2 is a photograph taken by a transmission electron microscope (TEM) for part A in FIG. 1, to be.

1, a semiconductor device according to an embodiment includes a substrate 101, a first non-conductive semiconductor layer 102 disposed on the substrate 101, a second non-conductive semiconductor layer 102 disposed on the first non- A first conductive semiconductor layer 111 disposed on the first control layer; a second conductive semiconductor layer 111 disposed on the first conductive semiconductor layer; The semiconductor structure 110 including the active layer 112 and the second conductivity type semiconductor layer 113 disposed on the active layer 112 and the semiconductor layer 110 between the first conductivity type semiconductor layer 111 and the active layer 112 And a second control layer 104 that is formed on the substrate.

First, the semiconductor structure 110 may be disposed on top of the semiconductor device according to the embodiment.

The semiconductor structure 110 includes a first conductive semiconductor layer 111, an active layer 112, and a second conductive semiconductor layer 113.

The first conductive semiconductor layer 111 may be formed of a compound semiconductor such as a Group III-V or a Group II-VI, and the first dopant may be doped. The first conductivity type semiconductor layer 111 is a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga ₁ -x 1 -y1 N (0? _{X1? 1} , 0 < _{y1? 1} , 0? X1 + y1? For example, AlGaN, AlN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity type semiconductor layer 111 doped with the first dopant may be an n-type semiconductor layer. However, the present invention is not limited thereto, and the first conductivity type semiconductor layer 111 may be a p-type semiconductor layer.

The first conductive semiconductor layer 111 may include a textured structure having a predetermined pattern. For example, the texturing structure may be disposed on the first conductive semiconductor layer 111. The texture structure may have a plurality of patterns, and the thickness and width may have various shapes, and the plurality of patterns may have the same thickness and width. The texture structure may be connected to the first electrode 107 to promote electron spreading, thereby improving the light yield. With this configuration, the semiconductor device according to the embodiment can improve the operation voltage and improve the yield. In addition, the textured structure may include, but is not limited to, a superlattice structure. Further, the texture structure is not limited to the above-mentioned shape, thickness and width.

The active layer 112 may be disposed between the first conductive semiconductor layer 111 and the second conductive semiconductor layer 113. The active layer 112 may include a plurality of well layers (not shown) and a plurality of barrier layers (not shown). A well layer (not shown) is formed by a first carrier (electron or hole) injected through the first conductivity type semiconductor layer 111 and a second carrier (hole or electron) injected through the second conductivity type semiconductor layer 113 ). When the first carrier (or the second carrier) of the conduction band and the second carrier (or the first carrier) of the electrical conductivity band are recombined in the well layer (not shown) of the active layer 112, the conduction band of the well layer (not shown) Light having a wavelength corresponding to the difference in energy level (energy band gap) of the electrical conductivity band of the well layer (not shown) may be generated.

The active layer 112 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The active layer 112 may include a plurality of well layers (not shown) and barrier layers (not shown). A well layer (not shown) and a barrier layer (not shown) are formed of In _{x 2} Al _{y 2} Ga _{1 -x 2 -y 2} N (0? X _{2 ? 1} , 0 < _{y 2 ? 1} , 0? X 2 + y 2? 1) Lt; / RTI &gt; A well layer (not shown) may have a different aluminum composition depending on the wavelength of light emitted.

A well layer (not shown) in the active layer 112 may include a material having an energy band gap that is less than the energy band gap of the barrier layer (not shown). For example, the well layer (not shown) may have an Al composition that is less than the Al composition of the barrier layer (not shown).

The composition ratio of the Al composition of the first conductivity type semiconductor layer 111 and the Al composition of the well layer (not shown) may be 1: 0.33 to 1: 0.75.

First, when the composition ratio of the Al composition of the first conductivity type semiconductor layer 111 and the Al composition of the well layer (not shown) is less than 1: 0.33, there is a problem that the crystal quality of the active layer 112 is lowered. When the composition ratio of the Al composition of the first conductivity type semiconductor layer 111 and the Al composition of the well layer (not shown) is greater than 1: 0.75, the light generated in the active layer 112 is injected into the first conductivity type semiconductor layer 111 There is a limit to absorb.

The second conductive semiconductor layer 113 may be formed on the active layer 112 and may be formed of a compound semiconductor such as a group III-V or II-VI group. In the second conductive semiconductor layer 113, The dopant can be doped.

The second conductive type semiconductor layer 113 is a semiconductor material having a compositional formula of _{In x5 Al y2 Ga 1 -x5- y2} N (0≤x5≤1, 0 <y2≤1, 0≤x5 + y2≤1) or AlInN , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity type semiconductor layer 113 doped with the second dopant may be a p-type semiconductor layer. However, the present invention is not limited thereto, and the second conductivity type semiconductor layer 111 may be an n-type semiconductor layer.

The second control layer 104 may be disposed between the first conductivity type semiconductor layer 111 and the active layer 112. The energy band gap of the second control layer 104 may be smaller than that of the first conductivity type semiconductor layer 111 and may be greater than the energy band gap of the active layer 112.

Also, the second control layer 104 may be formed of a plurality of layers. The second control layer 104 may include a second-1 control layer 104-1 and a second-2 control layer 104-2. And the plurality of layers of the control layer 104 may have different energy band gaps. For example, the control layer 104 may have a larger Al composition in the vicinity of the active layer 112. In addition, the control layer 104 can be alternately stacked with a plurality of layers having different energy band gaps.

With such a configuration, the semiconductor device according to the embodiment can concentrate more electrons on the active layer 112 at a low energy level. Accordingly, the probability of recombination of electrons and holes increases in the semiconductor device, and the light efficiency can be improved.

The Al composition of the second-1 control layer 104-1 may be smaller than the Al composition of the second-second control layer 104-2. As described above, the 2-1 control layer 104-1 and the 2-2 control layer 104-2 may be alternately stacked.

The second control layer 104 can relax the stress due to the lattice mismatch between the active layer 112 and the first conductivity type semiconductor layer 111. [ For example, the 2-1 control layer 104-1 and the 2-2 control layer 104-2 may include AlGaN. In this case, when the second-second control layer 104-2 having a large lattice constant is grown on the second-first control layer 104-1 having a small lattice constant value, the second-first control layer 104-1, Compressive stress is applied to the second control layer 104-2 and the second control layer 104-1 is grown on the second control layer 104-2. Tensile stress may be applied. Accordingly, the second control layer 104 can reduce the stress transmitted to the active layer 112 because the compressive stress and the tensile stress, which are opposite to each other, are canceled.

The Al composition of the second-1 control layer 104-1 may be 1: 0.5 to 1: 0.8 in terms of the Al composition and the composition ratio of the well layer of the active layer 112. With such a configuration, the second control layer 104 can relieve the stress acting on the active layer 112.

When the Al composition and the composition ratio of the well layer of the active layer 112 are smaller than 1: 0.5, the Al composition of the 2-1 control layer 104-1 is such that the stress relaxation due to the lattice constant imbalance of the active layer 112 is There is a lowering limit. The Al composition of the 2-1 control layer 104-1 is such that light absorption occurs when the Al composition and the composition ratio of the well layer of the active layer 112 are larger than 1: 0.8.

The composition ratio of the Al composition of the first conductivity type semiconductor layer 111 and the Al composition of the second-first control layer 104-1 may be 1: 0.5 to 1: 0.67.

When the composition ratio of the Al composition of the first conductivity type semiconductor layer 111 and the Al composition of the second-first control layer 104-1 is less than 1: 0.5, defects transferred to the active layer 112 increase, There is a problem that the light transmission decreases when the composition ratio of the Al composition of the 1-conductivity type semiconductor layer 111 and the Al composition of the 2-1 control layer 104-1 is larger than 1: 0.8.

The first control layer 103 may be disposed under the first conductive type semiconductor layer 111. The first control layer 103 may be formed of a plurality of layers. The first control layer 103 may include a 1-1 control layer 103-1 and a 1-2 control layer 103-2. The first control layer 103 may have a structure in which the first control layer 103-1 and the first control layer 103-2 are repeatedly arranged alternately.

2, the Al composition of the first control layer 103 may be larger than that of the first non-conductive semiconductor layer 102 and the first conductive semiconductor layer 111 on the upper portion. Accordingly, when the semiconductor device is observed with a transmission electron microscope (TEM), the first control layer 103 is formed between the first conductivity type semiconductor layer 111 and the first non-conductive type semiconductor layer 102, As shown in FIG.

Here, a transmission electron microscope can form an image on a fluorescent screen by emitting an electron beam to a sample to transmit a very thin tissue section. That is, a transmission electron microscope can form an image of a sample appearing by collecting electrons dispersed by using a point whose brightness in a specific region is proportional to the number of electrons passing through the specimen.

3, it can be seen that the first control layer 103 is composed of the first-first control layer 103-1 and the first-second control layer 103-2 which are alternately repeatedly arranged have.

For example, the first control layer 103-1 may include AlGaN, and the first control layer 103-2 may include AlN.

In a structure in which a plurality of layers are stacked in the first control layer 103, the lattice constant of the first control layer 103-2 may be greater than the lattice constant of the first control layer 103-1 . Thus, when the first control layer 103-2 is grown on the first control layer 103-1 having a small lattice constant, compressive stress is applied to the first control layer 103-1, stress can act. When the first control layer 103-1 is grown on the first control layer 103-2, tensile stress may act on the first control layer 103-2. have. When the first-first control layer 103-1 and the first-second control layer 103-1 are repeatedly laminated, the compressive stress and the tensile stress, which are opposite to each other, are canceled, .

The first control layer 103 (for example, the 1-1 control layer 103-1) can reduce the occurrence of cracks by increasing the compressive stress by increasing the Al composition. The first control layer 103 disposed on the lower substrate 101 may be heated to a high temperature (for example, 800 to 900 degrees Celsius) The cooling process of reducing the temperature of the substrate 101 and the first control layer 103 to room temperature may be performed. In this case, the substrate 101 is subjected to a tensile stress (For example, when a tensile stress is applied to the growth substrate, the growth substrate is bent in a concave shape, and the first control layer 103 is defective) When subjected to compressive stress, the growth substrate is bent into a convex shape It is.)

As described above, since the growth substrate undergoes tensile stress by the cooling step, the compressive stress can be increased in the first control layer 103 in order to form the first control layer 103 without cracking.

On the contrary, when the Al composition is decreased, the tensile stress is further increased in the first control layer 103, and the first control layer 103 can not provide the compressive stress to the substrate 101, and cracks may occur.

Referring to FIG. 2 again, the Al composition of the first-conductivity-type semiconductor layer 111 may be 1: 0.27 to 1: 0.6 in the Al composition of the first control layer 103-1 .

When the Al composition and the composition ratio of the first conductivity type semiconductor layer 111 are smaller than 1: 0.27, the Al composition of the first control layer 103-1 is limited by the deterioration of crystal quality of the semiconductor element . When the Al composition and the composition ratio of the first conductivity type semiconductor layer 111 are larger than 1: 0.6, the Al composition of the first control layer 103-1 is set so that the stress control effect with the substrate 101 is reduced There is a problem that a crack occurs.

The lattice constant of the first control layer 103 is larger than the lattice constant of the first non-conductive semiconductor layer 102 and may be smaller than the lattice constant of the first conductivity type semiconductor layer 111.

Further, the first non-conductive semiconductor layer 102 may be disposed under the first control layer 103. The first non-conductive semiconductor layer 102 may include undoped GaN. That is, the first non-conductive semiconductor layer 102 may be a non-conductive type semiconductor layer that does not include a dopant, or a conductive semiconductor layer that includes a dopant, but the present invention is not limited thereto.

And may be disposed on the substrate 101 existing under the semiconductor device.

In this case, the first non-conductive semiconductor layer 102 has a large difference in lattice constant from the substrate 101, and a dislocation may occur in the semiconductor structure 110 disposed on the first non-conductive semiconductor layer 102 have.

At this time, a first control layer 103 having a lattice constant between the substrate 101 and the semiconductor structure 110 may be disposed between the substrate 101 and the semiconductor structure 110. Thus, the first control layer 103 relaxes the difference in lattice constant between the substrate 101 and the semiconductor structure 110, thereby reducing the possibility of dislocations in the semiconductor structure 110.

That is, the first control layer 103 relaxes the difference in lattice constant between the first non-conductive semiconductor layer 102 and the first conductivity type semiconductor layer 111 and is disposed on the first control layer 103 The potential generation of the first conductivity type semiconductor layer 111 can be reduced

The Al composition of the first control layer 103-1 may be 1: 0.133 to 1: 0.30 in the Al composition and the composition ratio of the well layer.

There is a problem that the Al composition of the first control layer 103-1 is lowered when the Al composition and the composition ratio of the well layer are smaller than 1: 0.133. If the Al composition and the composition ratio of the well layer are larger than 1: 0.30, the Al composition of the 1-1 control layer 103-1 may have a problem that the stress control effect is reduced and cracks are generated.

The thickness ratio of the thickness of the first non-conductive semiconductor layer 102 to the thickness of the first control layer 103 may be 1: 0.02 to 1: 0.1.

When the ratio of the thickness of the first non-conductive semiconductor layer 102 to the thickness of the first control layer 103 is less than 1: 0.02, the stress is concentrated on the first non-conductive semiconductor layer 102, There is a problem that the stress control is difficult to be carried out with the resin layer 103.

If the ratio of the thickness of the first non-conductive semiconductor layer 102 to the thickness of the first control layer 103 is larger than 1: 0.1, there is a problem that the crystal quality is deteriorated.

The substrate 101 and the growth substrate 1 may be formed of at least one of, for example, sapphire (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Do not.

The substrate 101 may be removed by a laser lift off (LLO) process, but not limited thereto, and light may be transmitted.

Figs. 4 to 5 are photographs taken by an optical microscope of the semiconductor device according to Experimental Examples and Examples, respectively.

4 (a) and 4 (b) show the case where the control layer does not exist in the experimental example, and the bright field (FIG. 4 (a)) and the dark field . Here, the transmitted light of the sample by the white light source which is known in the optical microscope is imaged, and the observer is the image obtained by detecting only the light scattered by the sample.

4 (a) and 4 (b), it can be seen that a crack C is generated on the surface of the second conductivity type semiconductor layer which is the surface of the semiconductor element.

5 illustrates a bright field (FIG. 5 (a)) and a dark field (dark field) with respect to the surface of the second conductivity type semiconductor layer of the semiconductor device (when the control layer is present) 5 (b)).

5 (a) and 5 (b), it can be seen that the crack C is removed from the surface of the second conductivity type semiconductor layer which is the surface of the semiconductor device.

6 is a cross-sectional view of a semiconductor device according to another embodiment.

6, a semiconductor device according to another embodiment includes a first conductive semiconductor layer 211, a second conductive semiconductor layer 213, a first conductive semiconductor layer 211, A semiconductor structure 210 including an active layer 212 disposed between the first conductive semiconductor layer 211 and the active layer 212, a second control layer 206 disposed between the first conductive semiconductor layer 211 and the active layer 212, A first non-conductive semiconductor layer 204 disposed under the first control layer 205; a second non-conductive semiconductor layer 204 disposed under the first control layer 205; A control layer 203, a second non-conductive semiconductor layer 202 disposed under the third control layer 203, and a substrate 201.

The substrate, the first non-conductive semiconductor layer, the first control layer, the second control layer, and the semiconductor structure described above may be similarly applied.

The second non-conductive semiconductor layer 202 under the third control layer 203 and the third control layer 203 may be alternately disposed on the substrate 201. [

Like the first control layer 205, the third control layer 203 may include a plurality of layers. The third control layer 203 may include a 3-1 control layer 203-1 and a 3-2 control layer 203-2. In addition, the 3-1 control layer 203-1 and the 3-2 control layer 203-2 are alternately arranged, and as described above, it is possible to prevent cracks from occurring on the substrate 201. [

In addition, the Al composition of the 3-1 control layer 203-1 may be smaller than the Al composition of the 3-2 control layer 203-2. The same contents as described in the first control layer can be applied.

Likewise, the second non-conductive semiconductor layer 202 may include undoped GaN.

Thus, the third control layer 203 can improve the crystallinity of the semiconductor structure 210 grown on the upper side and suppress the generation of dislocations. In addition, the third control layer 203 increases the shrinking stress to cancel the tensile stress of the substrate 201 generated during cooling, so that the substrate 201 is kept in equilibrium with respect to the stress, ) And the substrate 201 can be prevented from being cracked.

7 is a conceptual diagram of a semiconductor device according to an embodiment.

7, the semiconductor device includes a substrate 101, a first non-conductive semiconductor layer 102 disposed under the substrate 101, a first control layer 104 disposed under the first non-conductive semiconductor layer 102, A first electrode 131 connected to the first conductive semiconductor layer 111 and a second electrode connected to the first electrode 131. The first electrode 131 is connected to the first electrode 131, A second electrode 132 connected to the second conductivity type semiconductor layer 113 and a second column electrode 142 electrically connected to the second electrode 132. [

In this case, the light generated in the semiconductor structure 110 may be emitted through the side surface of the semiconductor element or the like. The first column electrode 141 and the second column electrode 142 are electrically connected to the circuit pattern PT and the like to receive power.

However, the present invention is not limited to this structure, and the semiconductor device may have a vertical or a letter structure.

8 is a conceptual view of a semiconductor device package according to an embodiment.

First, the semiconductor device is constituted by a package and can be used for a resin or resist, a curing device for SOD or SOG. Alternatively, the semiconductor device package may be used for therapeutic medical use or for an electronic device such as an air purifier or a sterilizing device such as a water purifier.

8, the semiconductor device package includes a body 2 formed with a groove 3, a semiconductor element 10 disposed on the body 2, and a semiconductor element 10 disposed on the body 2 and electrically connected to the semiconductor element 10 And may include a pair of lead frames 5a and 5b connected thereto. The semiconductor device 10 may include all of the structures described above.

The body 2 may include a material or a coating layer that reflects ultraviolet light. The body 2 can be formed by laminating a plurality of layers 2a, 2b, 2c, and 2d. The plurality of layers 2a, 2b, 2c, 2d may be the same material or may comprise different materials.

The groove 3 may be formed so as to be wider as it is away from the semiconductor element, and a step 3a may be formed on the inclined surface.

The light-transmitting layer 4 may cover the groove 3. [ The light-transmitting layer 4 may be made of a glass material, but is not limited thereto. The light-transmitting layer 4 is not particularly limited as long as it is a material capable of effectively transmitting ultraviolet light. The inside of the groove 3 may be an empty space.

The semiconductor device may be used as a light source of an illumination system, or as a light source of an image display device or a lighting device. That is, semiconductor devices can be applied to various electronic devices arranged in a case to provide light. Illustratively, when a semiconductor device and an RGB phosphor are mixed and used, white light with excellent color rendering (CRI) can be realized.

The above-described semiconductor device is composed of a light emitting device package and can be used as a light source of an illumination system, for example, as a light source of a video display device or a lighting device.

When used as a backlight unit of a video display device, it can be used as an edge type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or a bulb type. It is possible.

The light emitting element includes a laser diode in addition to the light emitting diode described above.

The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the light emitting element. Then, an electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, There are differences in the directionality and phase of light. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As photodetectors, photodetectors (silicon, selenium), photodetectors (cadmium sulfide, cadmium selenide), photodiodes (for example, visible blind spectral regions or PDs with peak wavelengths in the true blind spectral region) A transistor, a photomultiplier tube, a phototube (vacuum, gas-filled), and an IR (Infra-Red) detector, but the embodiment is not limited thereto.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (10)

A first conductive semiconductor layer;
A second conductivity type semiconductor layer; And
And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
Wherein the first conductive semiconductor layer and the active layer include Al,
Wherein,
Well layer; And a barrier layer,
Wherein the composition ratio of the Al composition of the first conductivity type semiconductor layer to the Al composition of the well layer is 1: 0.33 to 1: 0.75.
The method according to claim 1,
And a first control layer disposed under the first conductive type semiconductor layer,
Wherein the first control layer comprises:
A 1-1 control layer; And
And a 1-2 control layer disposed on the 1-1 control layer,
Wherein the Al composition of the first control layer is larger than the Al composition of the first control layer,
Wherein a composition ratio of an Al composition of the 1-1 control layer and an Al composition of the first conductivity type semiconductor layer is 1: 0.27 to 1: 0.6.
3. The method of claim 2,
Wherein a composition ratio of an Al composition of the 1-1 control layer and an Al composition of the well layer is 1: 0.133 to 1: 0.30.
The method according to claim 1,
And a second control layer disposed between the active layer and the first conductive type semiconductor layer,
Wherein the second control layer comprises:
A 2-1 control layer; And
And a 2-2 control layer disposed on the 2-1 control layer,
Wherein the Al composition of the 2-2 control layer is larger than the Al composition of the 2-1 control layer,
Wherein a composition ratio of an Al composition of the 2-1 control layer and an Al composition of the well layer is 1: 0.5 to 1: 0.8.
5. The method of claim 4,
Wherein the composition ratio of the Al composition of the first conductivity type semiconductor layer to the Al composition of the second-first control layer is 1: 0.5 to 1: 0.67.
3. The method of claim 2,
And a first non-conductive semiconductor layer disposed under the first control layer,
Wherein the first non-conductive semiconductor layer does not contain Al.
The method according to claim 6,
Wherein a ratio of a thickness of the first control layer to a thickness of the first non-conductive semiconductor layer is 1: 0.02 to 1: 0.1.
The method according to claim 6,
A third control layer disposed under the first non-conductive semiconductor layer; And
And a second non-conductive semiconductor layer disposed under the third control layer.
9. The method of claim 8,
Wherein the third control layer comprises:
A 3-1 control layer; And
And a 3-2 control layer disposed on the 3-1 control layer,
And the Al composition of the 3-2 control layer is larger than the Al composition of the 3-1 control layer.
The method according to claim 6,
Wherein the first control layer has a lattice constant larger than a lattice constant of the first non-conductive semiconductor layer and smaller than a lattice constant of the first conductive type semiconductor layer.

Images