KR20180124003A - Cylindrical sputtering target - Google Patents

Abstract

[PROBLEMS] To provide a sputtering target that can be stably held on a substrate by preventing cracking of the sputtering target material.
[MEANS FOR SOLVING PROBLEMS] A sputtering target comprising a base material formed of a metal, a sputtering target material formed on one surface of the base material, and a bonding material formed between the base material and the sputtering target material, wherein the bonding material includes at least a first metal element and a second metal element, And the second metal element is contained in the sputtering target at a concentration of 10 ppm or more and 5000 ppm or less with respect to the first metal element.

Description

[0001] CYLINDRICAL SPUTTERING TARGET [0002]

One embodiment of the present invention relates to a sputtering target, and relates to a sputtering target in which a target material and a base material are bonded to each other by a bonding material made of a metal material.

A sputtering target material used for forming a thin film by sputtering is attached to a sputtering device while being stuck to a substrate supporting the sputtering target material. A representative sputtering target has a form in which a target material formed into a plate shape is similarly stuck to a plate-like support base material (which is also referred to as a " backing plate ").

The sputtering target mounted on the sputtering apparatus is kept under reduced pressure at the time of film formation by sputtering, and ions generated in a glow discharge plasma by argon gas or the like are irradiated and sputtered. Since the temperature of the target material is raised by irradiation with ions, a sputtering target cooling mechanism is provided in the sputtering apparatus. In many cases, the cooling mechanism is configured such that cooling water flows on the back side of the supporting base material.

Since the target material and the support base material are usually of different materials, a bonding material is used to bond them. As the bonding material, a metal material having a relatively low melting point such as indium or tin is used.

In the thin film manufacturing technique by sputtering, magnetron sputtering is the mainstream. In the flat sputtering target used in the magnetron sputtering apparatus, the entire target area is consumed by sputtering, and the effective utilization rate of the target material is considered to be about 20% to 30%. On the other hand, a cylindrical sputtering target having a cylindrical target shape has been developed.

The cylindrical sputtering target has a structure in which a cylindrical target material is mounted on the outer peripheral surface of a cylindrical base material. Sputtering film formation is performed while rotating the cylindrical sputtering target, thereby widening the entire area of the target material, thereby improving the utilization ratio of the target material (see, for example, Patent Document 1).

Japanese Laid-Open Patent Publication No. 2010-018883

In the sputtering target, the target material and the substrate are bonded together by the bonding material. At this time, if the bonding material to be formed between the target material and the substrate is not uniformly filled and voids are formed, the bonding strength is lowered. Further, if voids are present in the bonding material, heat of the target material is difficult to diffuse through the base material, and there is a possibility that the target material may be damaged due to thermal deformation.

In the cylindrical sputtering target, a gap portion is formed between a cylindrical base material and a cylindrical sputtering target material disposed coaxially with the cylindrical base material, and the gap portion is filled with a bonding material to fix the two. If the bonding material is not sufficiently filled in the gap portion between the cylindrical base material and the cylindrical sputtering target material, voids are formed, which results in defective joining, causing the cylindrical sputtering target material to be twisted or deformed and cracked during sputtering deposition.

In the cylindrical sputtering target described in Patent Document 1, after the bonding material is filled, the cooling is started from one end in the cylindrical axial direction and is sequentially cooled toward the other end. By further supplying the bonding material in a molten state during cooling, It is described that the ratio can be reduced.

Although the flat sputtering target is used in a stationary state when mounted in the sputtering apparatus, since the cylindrical sputtering target is rotated and used, the bonding material requires a bonding strength sufficient to withstand it. Further, since the cylindrical sputtering target material is held uniaxially by the cylindrical base material, it is necessary that the target material is kept so as not to be easily cracked even if warpage due to its own weight or thermal or mechanical deformation acts. However, it is a problem that these requirements can not be satisfied simply by filling the bonding material so that no gap is formed between the cylindrical base material and the cylindrical sputtering target material.

In view of the above problems, it is an object of the present invention to provide a cylindrical sputtering target which is stably held on a cylindrical substrate by preventing cracking of the cylindrical sputtering target material.

According to one embodiment of the present invention, there is provided a sputtering target comprising: a substrate formed of a metal; a sputtering target material formed on one surface of the substrate; and a bonding material formed between the substrate and the sputtering target material, wherein the bonding material comprises a first metal element and a second metal element And the second metal element is contained at a concentration of 10 ppm or more and 5000 ppm or less with respect to the first metal element.

According to one embodiment of the present invention, there is provided a cylindrical sputtering target comprising a cylindrical base material formed of metal, a cylindrical sputtering target material formed coaxially with the outer circumferential surface of the cylindrical base material, and a bonding material formed between the cylindrical base material and the cylindrical sputtering target material, And the second metal element is contained in a concentration of 10 ppm or more and 5000 ppm or less with respect to the first metal element.

In one embodiment of the present invention, the first metal element is indium (In), and the second metal element is preferably one selected from copper (Cu), titanium (Ti), and nickel (Ni).

In one embodiment of the present invention, the first metal element is indium (In), the second metal element is copper (Cu), and the copper (Cu) as the second metal element is indium (In) , Preferably not less than 2000 ppm and not more than 5000 ppm.

In one embodiment of the present invention, the first metal element is indium (In), the second metal element is titanium (Ti), and the titanium (Ti) as the second metal element is indium (In) By weight, preferably not less than 18 ppm and not more than 120 ppm.

In one embodiment of the present invention, the first metal element is indium (In), the second metal element is nickel (Ni), and the nickel (Ni) as the second metal element is indium (In) By weight to 480 ppm by weight or less.

The bonding material may have a Shore hardness of 1.1 or more and 1.7 or less and a contact angle to the ITO surface may be 15 ° or more and less than 25 °.

The sputtering target material is a ceramics sintered body, and for example, the ceramics sintered body may contain indium oxide. The outer surface of the substrate may have a surface roughness (Ra) value of 1.8 占 퐉 or more.

According to one embodiment of the present invention, in order to bond the substrate with the sputtering target material, at least a first metal element and a second metal element are included, and the second metal element is one-hundredth or less By using the bonding material contained in the concentration, the sputtering target material is prevented from cracking, and a sputtering target stably held in the base material can be obtained.

1 is a perspective view showing a configuration of a cylindrical sputtering target according to an embodiment of the present invention.
2 is a cross-sectional view showing a configuration of a cylindrical sputtering target according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a method of manufacturing a cylindrical sputtering target according to an embodiment of the present invention.
4 is a view showing a method of evaluating the wettability of a bonding material.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be embodied in many different modes, and is not limited to the description of the embodiments described below. Although the drawings are schematically illustrated with respect to width, thickness, shape, and the like of each part in comparison with actual embodiments in order to make the description more clear, the drawings are merely exemplary and do not limit the interpretation of the present invention. In the present specification and the drawings, the same elements as those described above with respect to the drawing of the drawing are denoted by the same reference numerals, and the detailed description may be appropriately omitted.

[Cylindrical sputtering target]

Fig. 1 is a perspective view for explaining a configuration of a cylindrical sputtering target according to the present embodiment. Fig. Fig. 2 is a sectional view showing a configuration of the sputtering target according to the present embodiment.

The cylindrical sputtering target 100 includes a cylindrical sputtering target material 102 and a cylindrical substrate 104 for supporting the cylindrical sputtering target material 102. The cylindrical sputtering target material 102 is fixed to the cylindrical base material 104 by a bonding material 106. The bonding material 106 is formed so as to fill the gap portion formed between the cylindrical sputtering target material 102 and the cylindrical base 104.

The cylindrical sputtering target material 102 is formed so as to surround the outer peripheral surface of the cylindrical base 104. It is preferable that the cylindrical sputtering target material 102 is formed coaxially or substantially coaxially with the center axis of the cylindrical base 104. With this configuration, when the cylindrical sputtering target is mounted on the sputtering apparatus and rotated around the cylindrical substrate 104, the distance between the cylindrical sputtering target material 102 and the surface to be coated (sample substrate) can be kept constant .

The cylindrical sputtering target 100 may be mounted with a plurality of cylindrical sputtering target materials 102 on the cylindrical base material 104. When mounting a plurality of cylindrical sputtering target members 102 to the cylindrical base 104, it is preferable that the respective cylindrical sputtering target members 102 are arranged with a gap. The gap may be 1 mm or less, for example, 0.2 mm to 0.5 mm. By disposing a plurality of cylindrical sputtering target members 102 in such a manner as to have a gap, breakage can be prevented.

According to this embodiment, a cylindrical sputtering target having a length of 100 mm or more can be provided by bonding a plurality of cylindrical sputtering target materials 102 to the cylindrical base material 104 with the bonding material 106.

[Cylindrical sputtering target material]

As shown in Figs. 1 and 2, the cylindrical sputtering target material 102 is formed hollow and has a cylindrical shape. The cylindrical sputtering target material 102 has a thickness of at least several millimeters to several tens of millimeters, and the entire thickness portion can be used as a target material. A cylindrical substrate 104 is inserted into the hollow portion of the cylindrical sputtering target material 102 and bonded by the bonding material 106. The cylindrical sputtering target material 102 and the cylindrical base 104 are not formed in close contact with each other but both are disposed with a gap and the bonding material 106 is formed so as to fill the gap portion. In order to stably maintain the cylindrical sputtering target material 102 and the cylindrical base 104, it is preferable that there is no gap in the bonding material 106 in the gap portion.

The cylindrical sputtering target material 102 has a cylindrical outer surface serving as a target surface and an inner surface of the cylindrical surface facing the cylindrical base 104 and contacting the bonding material 106. Therefore, at the time of manufacturing, the outer surface of the cylindrical sputtering target material 102 is smoothly formed, and the inner surface of the cylinder may be roughened to improve the adhesion.

The cylindrical sputtering target material 102 is made of various materials capable of forming a sputtering film. For example, the cylindrical sputtering target material 102 may be ceramics. As the ceramics, a sintered body of a metal oxide, a metal nitride, a metal oxynitride, or the like can be applied. As the metal oxide, an oxide of a metal belonging to a typical element such as indium oxide, tin oxide, zinc oxide, or gallium oxide can be applied. More specifically, examples thereof include indium tin oxide (ITO) containing tin oxide, zinc oxide (ZnO), indium zinc oxide (IZO), indium zinc oxide A sintered body of indium gallium zinc oxide (IGZO), or the like can be applied as the cylindrical sputtering target material 102. Meanwhile, the above example is merely an example, and various sputtering materials can be applied to the sputtering target according to the present invention as a target material.

[Cylindrical base]

The cylindrical substrate 104 preferably has an outer shape along the inner surface of the cylindrical sputtering target material 102 having a hollow structure. The outer diameter of the cylindrical base 104 is slightly smaller than the inner diameter of the cylindrical sputtering target material 102, and is adjusted so that a clearance is formed when the two are overlapped on the coaxial axis. A bonding material 106 is formed in this gap portion.

The cylindrical sputtering target material 102 is heated by irradiation of ions at the time of film formation by sputtering, and the temperature is raised. It is preferable that the cylindrical base material 104 has a cooling function of the cylindrical sputtering target material 102 in order to suppress the temperature rise of the cylindrical sputtering target material 102 at the time of sputtering deposition. For example, it is preferable that the cylindrical base member 104 has a hollow structure so that the refrigerant flows. Therefore, it is preferable that the cylindrical base member 104 has good conductivity and thermal conductivity as constituent members of the sputtering target.

The cylindrical base material 104 is preferably a bonding material and a metal having a high wettability and a high bonding strength. For example, the cylindrical base material 104 is preferably formed of copper (Cu) or titanium (Ti), or a copper alloy or titanium alloy desirable. For example, as the copper alloy, an alloy containing copper (Cu) as a main component such as chromium copper can be applied. When titanium (Ti) is used as the cylindrical substrate 104, a lightweight and rigid substrate can be obtained.

The cylindrical substrate 104 may be formed of a single metal or a metal alloy, or may be formed of a film of another metal on the surface of the metal substrate. For example, a metal film containing titanium (Ti), copper (Cu), silver (Ag), nickel (Ni), or the like may be formed.

In the cylindrical sputtering target, ions are not irradiated on the entire surface of the cylindrical sputtering target material 102 during sputtering, and ions are irradiated only on a part of the surface, so that the cylindrical sputtering target material A temperature difference is generated in the heat exchanger 102. However, since the cylindrical substrate 104 has a cooling function, the temperature rise of the cylindrical sputtering target material 102 on the outside thereof can be suppressed, and the influence of the thermal deformation due to the temperature difference can be suppressed.

The surface of the cylindrical base member 104 which is in contact with the bonding material may be roughened. By making the surface of the cylindrical substrate 104 roughened, the surface area in contact with the bonding material can be increased. For example, the surface of the cylindrical substrate 104 may be roughened by sandblasting or the like, and the surface roughness Ra may have a value of 1.8 占 퐉 or more.

[binder]

The bonding material 106 is formed between the cylindrical sputtering target material 102 and the cylindrical base 104. The bonding material 106 joins the cylindrical sputtering target material 102 and the cylindrical base material 104, and is required to have good heat resistance and thermal conductivity. Further, it is required to have a characteristic that the gas emission is low in vacuum. From the viewpoint of manufacturing, it is preferable that the bonding material 106 has fluidity when the cylindrical sputtering target material 102 and the cylindrical base 104 are bonded. In order to satisfy these characteristics, a low melting point metal material having a melting point of 300 DEG C or lower is used as the bonding material 106. [ For example, as the bonding material 106, a metal such as indium, tin or the like, or a metal alloy material containing any one of these elements, is applied. Concretely, a single piece of indium or tin, an alloy of indium and tin, and a solder alloy containing tin as a main component are used as the bonding material 106.

In the present embodiment, the bonding material 106 comprises a plurality of kinds of metal elements. Of these plural kinds of metallic elements, the first metallic element is included as a main constituent element in the bonding material 106, and the second metallic element is contained at a much lower concentration than the first metallic element. Here, the main metal element constituting the bonding material 106 is referred to as a " first metal element ", and a secondary metallic element contained in a smaller amount than the first metallic element is discriminated as a " second metallic element " The first metal element and the second metal element are not limited to one kind of metal element but may be a first metal element group or a second metal element group and each group may include a plurality of metal elements .

In the present embodiment, the first metal element (or the first metal element group) contained as a main component is a metal element occupying not less than 99 wt% and less than 100 wt% in the total amount, The second metal element (or the second metal element group) included is a metal element contained in a ratio of 0.001 wt% or more and 0.5 wt% or less (10 ppm or more and 5,000 ppm or less). That is, the second metal element is contained at a concentration of not more than 1/100 of the first metal element.

Incidentally, an impurity element which is inevitably included refers to an element contained at a concentration of 1 ppm or less, excluding the main metal element and the trace metal element. In other words, the bonding material 106 contains the second metal element (or the second metal element group) at a ratio of 0.001 wt% or more and 0.5 wt% or less (10 ppm or more and 5,000 ppm or less) 1 metal element (or a first group of metal elements) and unavoidable impurities.

In other words, the second metal element (or the second metal element group) can be formed in such a range that the total of the first metal element (or the first metal element group) and the inevitably included impurity element does not exceed 100 wt% , And it is preferably contained in a concentration of 0.001 wt% or more and 0.5 wt% or less (10 ppm or more and 5,000 ppm or less).

The bonding material 106 is preferably a first metal element (or first metal element group) included as a main component is a metal element of the same kind as at least one metal element contained in the cylindrical sputtering target material 102. [ A plurality of cylindrical sputtering target materials 102 are formed on the cylindrical sputtering target mounted on the cylindrical base 104 by forming the bonding material 106 to include a metal element of the same kind as the cylindrical sputtering target material 102, Even if the bonding material 106 is exposed to the joint region of the cylindrical sputtering target material 102, it is possible to prevent impurity contamination on the film deposited by sputtering.

As the bonding material 106, a metal such as indium (In) or tin (Sn) is selected as the first metal element. These metals can be poured into the gap 108 between the cylindrical sputtering target material 102 and the cylindrical base 104 in a molten state since the melting point is not higher than 300 占 폚. The bonding material 106 may include both of indium (In) and tin (Sn) so as to be grasped as the first metal element group.

When the cylindrical sputtering target material 102 is ceramics containing indium oxide, indium can be applied as a first metal element contained as a main component to the bonding material 106. When the cylindrical sputtering target material 102 is ceramics containing indium oxide and tin oxide, indium or tin or an alloy of indium and tin can be used as the first metal element contained as a main component in the bonding material 106 have.

The second metal element contained in the bonding material 106 is a metal element different from the first metal element, and is preferably a transition element, for example. The second metal element contained in the bonding material 106 is preferably a metal element of the same kind as the metal constituting the cylindrical base 104. [ Titanium (Ti), copper (Cu), silver (Ag), and nickel (Ni) can be applied as the second metal element.

When the wettability of the bonding material 106 with the cylindrical sputtering target material 102 is high, it becomes easy to fill the gap with the cylindrical base material 104, and voids which become defective in adhesion become difficult to remain.

Further, it is preferable that the bonding material 106 has a shock absorbing property (buffer material effect) in addition to the conductivity and thermal conductivity necessary for sputtering. When the cylindrical sputtering target material 102 is ceramics, cracks tend to occur when an external force acts. At this time, if the bonding material 106 has a hardness as high as that of the cylindrical sputtering target material and the cylindrical base material, the impact can not be absorbed. However, if the hardness is lower than that of the cylindrical sputtering target material and the cylindrical base material, the bonding material 106 formed between the two becomes a buffer material, and the impact can be mitigated.

The second metal element (or the second metal element group) included in the bonding material 106 in the present embodiment is preferably contained at a concentration capable of adjusting at least the wettability and the hardness of the bonding material 106 within a predetermined range . For example, the first metal element (or second metal element group) may be contained in an amount of 0.001 wt% or more and 0.5 wt% or less (10 ppm or more and 5,000 ppm or less) Metal element group) and inevitable impurities, the wettability and hardness of the bonding material 106 can be controlled within a predetermined range. For example, when the second metal element is copper (Cu), it is preferably contained in the bonding material in a range of 0.2 wt% or more and 0.5 wt% or less (2000 ppm or more and 5000 ppm or less). When the second metal element is titanium (Ti), it is preferable that the second metal element is included in the bonding material in the range of 0.0018 wt% or more and 0.012 wt% or less (18 ppm or more and 120 ppm or less). When the second metal element is nickel (Ni), it is preferable that the bonding material contains 0.0044 wt% or more and 0.048 wt% or less (44ppm or more and 480ppm or less).

Since the bonding material 106 is a metal material, if the wettability with the cylindrical sputtering target material 102 formed of a dissimilar material such as at least a metal oxide is poor, voids are liable to be generated when filled between the cylindrical sputtering target material and the cylindrical base material . The wettability of the bonding material 106 can be evaluated by the contact angle of the bonding material 106 to the cylindrical sputtering target material 102. That is, when the wettability is high, the contact angle is small. On the contrary, when the wettability is poor, the contact angle is large. In the present embodiment, it is preferable that the second metal element included in the bonding material 106 be contained in a concentration range capable of improving (lowering) the contact angle by 40% as compared with the case where the second metal element is not contained Do. That is, it is preferable that the contact angle is not less than 15 degrees and not more than 25 degrees. With this numerical value range, the bonding material 106 can be filled in the gap portion between the cylindrical sputtering target material 102 and the cylindrical base 104 without including voids.

In addition, the bonding material 106 needs to have a predetermined hardness in order to bond and hold the cylindrical sputtering target material 102 to the cylindrical base material 104. However, if the bonding material 106 is too hard, the function as a cushioning material is deteriorated. In the present embodiment, it is preferable that the hardness of the bonding material 106 is 1.0 or more as expressed by Shore hardness, and it is preferable that the hardness of Shore hardness is 1.0 or more and 1.5 or less. By setting the Shore hardness in this range, cracking of the sputtering target can be prevented.

On the other hand, in the present embodiment, the hardness of the bonding material 106 is represented by Shore hardness. However, when the hardness of the bonding material 106 is converted into other hardness such as Rockwell hardness, Brinell hardness and Vickers hardness,

The impurity elements which are inevitably included are lead (Pb), cadmium (Cd), iron (Fe), aluminum (Al), silicon (Si), arsenic (As), bismuth (Bi) , And sulfur (S). These elements are contained at a concentration of 10 ppm, preferably 1 ppm or less, so that the characteristics of the bonding material 106 can be prevented from being affected.

Fig. 3 shows a method of bonding the cylindrical sputtering target material 102 to the cylindrical base 104. Fig. A cylindrical sputtering target material 102 is inserted into the cylindrical substrate 104 such that the central axis is coaxial or substantially coaxial. The cylindrical base material 104 and the cylindrical sputtering target material 102 are arranged such that a gap portion 108 is formed between them. It is preferable that at least the gap portion 108 is kept at a reduced pressure such that the bonding material 106 flows into the gap portion 108. [ Alternatively, nitrogen gas or inert gas may be supplied to the gap portion 108 to replace the air. It is preferable to prevent oxidation of the bonding material supplied in the molten state in either case.

The bonding material 106 is supplied from the lower side of the gap portion 108 in a state in which the cylindrical base material 104 and the cylindrical sputtering target material 102 are erected. A heater 110 is provided around the cylindrical substrate 104 and the cylindrical sputtering target material 102. The temperature in the vicinity of the cylindrical base material 104 and the cylindrical sputtering target material 102 is heated to a temperature equal to or higher than the melting point of the bonding material 106 when the bonding material 106 is filled. In order to equalize the temperature, hot air may be sent to the inside of the cylindrical base 104, that is, to the hollow portion so as to be heated from the inside.

The heater 110 may be divided into a plurality of heating zones, and the temperature zones of the heating zones may be individually controlled. For example, when the bonding material 106 is filled in the gap portion 108 and cooled, the material may be cooled from one side to the other in the longitudinal direction of the cylindrical sputtering target material 102. By performing the temperature control in this way, it is possible to prevent the generation of welds by overlapping the residual solidified molten region of voids (bubbles) in the bonding material 106.

On the other hand, at the time of filling the bonding material 106, the inner surface of the cylindrical sputtering target material 102 and the outer surface of the cylindrical base 104 may have the same or similar coating as the bonding material 106. This film can be formed by a wet process.

The bonding material used for fixing the cylindrical sputtering material to the cylindrical base material affects not only the void but also the bonding strength of the bonding material itself. The higher the wettability of the bonding material, the higher the bonding strength is believed to be. The wettability of the bonding material increases with an increase in the content of the second metal element (or the second metal element group) described in the present embodiment, while if the content is too high, the bonding property hardens and the impact resistance deteriorates. As shown in this embodiment mode, at least titanium (Ti), copper (Cu), silver (Ag), and nickel (Ni) are selected as the second metal element, and these metal elements are inevitably included in the impurity element The second metal element (or the second metal element group) is contained in the first metal element (or the first metal element group) in an amount of 0.001 wt% or more and 0.5 wt% or less 10 ppm or more and 5,000 ppm or less).

As the second metal element included in the bonding material 106, a metal similar to the metal constituting the cylindrical base material 104 may be included. By including a metal element of the same kind as the cylindrical substrate 104, the wettability can be increased. Further, as the bonding material 106, the bonding strength can be increased.

(Or a group of metal elements) which is a metal element of the same kind as the metal constituting the cylindrical base material, in addition to the first metal element (or the first metal element group) included as the main component, It is possible to increase the wettability and prevent the occurrence of voids.

[Planar Sputtering Target]

Although the cylindrical sputtering target material has been described above, the present invention is not limited thereto, and it is also applicable to a flat sputtering target material. That is, when bonding a flat sputtering target to a flat substrate (backing plate), the bonding material of the present embodiment can be used.

As the planar sputtering target material, various sputterable materials such as metals and ceramics can be applied. As the ceramics, a sintered body of a metal oxide, a metal nitride, a metal oxynitride, or the like can be applied. As the metal oxide, sintered bodies such as ITO, ZnO, IZO and IGZO can be used as a flat sputtering target.

By using the bonding material according to the present embodiment also in the flat sputtering target, the wettability of the bonding material can be enhanced and the shore hardness can be set within the above-mentioned predetermined range. Thereby, voids are prevented from being generated in the bonding material when the flat sputtering target is bonded to the flat plate-shaped base material, and after the bonding, cracking of the sputtering target can be prevented.

Example  One

The results of evaluating the contact angle with respect to the amount of the metal component contained in the case of using indium (In) as the bonding material are shown. Six kinds of samples containing indium (In) as the metal element constituting the bonding material and containing different components were prepared.

Sample 1 is indium (In) having a purity of 99.99%, sample 2 is indium (In) containing 2000 ppm of copper (Cu), sample 3 is indium (In) containing 5000 ppm of copper (Cu) (In) containing 7000 ppm of copper (Cu), Sample 5 is indium (In) containing 10 000 ppm of copper (Cu), and Sample 6 is indium (In) containing 890 ppm of titanium (Ti).

In this embodiment, indium (In) corresponds to the first metal element constituting the bonding material, and copper (Cu) and titanium (Ti) correspond to the second metal element.

The base surface was evaluated by applying the same kind of metal to each sample on the ITO surface. This base surface assumes a state in which a surface of the target is ultrasonically welded and a metal of the same kind as the bonding material is applied.

As shown in Fig. 4, the contact angle [theta] was obtained from the following equation (1) from the height of the liquid droplet when a sample was brought into contact with each base surface: a and the distance to the center: b / 2.

[Equation 1]

? = 2? tan ^-1 (2a / b)? (One)

The results of evaluating each sample are shown in Table 1. Sample 1 shows the result when indium (In) was used as the bonding material, and a contact angle of 25.9 ° was obtained. On the other hand, in sample 2 containing 2000 ppm of copper (Cu), 16.7 ° in sample 2, in sample 3 containing 5000 ppm of copper (Cu), in 16.4 °, in sample 4 containing 7000 ppm of copper (Cu) And a contact angle of 12.8 DEG is obtained in the sample 5 containing 10000 ppm. In the sample 6 containing 890 ppm of titanium (Ti), a contact angle of 24.4 DEG was obtained.

[Table 1]

According to this embodiment, as the bonding material, copper (Cu) or titanium (Ti) corresponding to the second metal element is contained in indium (In) corresponding to the first metal element, . According to this embodiment, a contact angle of 10 DEG or more and 25 DEG or less is obtained as the contact angle. This numerical value range is smaller than the case where the second metal element is not included in the bonding material.

From the results shown in Table 1, it was found that the contact angle to the base surface was 25 占 or less in the range of 2000 ppm to 10000 ppm for copper (Cu) and 890 ppm for titanium (Ti). That is, it is suggested that the contact angles of the samples 2 to 6 are all small in the sample 1, and that the metal element corresponding to the second metal element contained in the bonding material may be contained in a concentration of 20 ppm or more and 5000 ppm or less .

The Shore hardness of each sample was evaluated. Sample 1 having 99.99% indium (In) had a Shore hardness of 1.09HS while Sample 2 having a copper (Cu) content of 2000 ppm had a Shore hardness of 1.20HS and a sample 3 having copper (Cu) content of 5000 ppm Sample 5 having a Shore hardness of 1.72 HS and a titanium (Ti) content of 890 ppm in Sample 5 having a Shore hardness of 1.61 HS and a copper content of 10,000 ppm in Sample 4 having a copper (Cu) content of 7000 ppm and a Shore Hardness ≪ / RTI > On the other hand, the Shore hardness was measured according to the Shore hardness test method (JISZ2246) prescribed in Japanese Industrial Standards.

[Table 2]

According to the results shown in Table 2, the Shore hardness increases as the content of copper (Cu) or titanium (Ti) increases with respect to indium (In). The hardness of the In metal may affect the occurrence of cracks in the target, and it is desirable to adjust it to 1.5 or less.

According to the present embodiment, in the bonding material containing the first metallic element as a main component, the second metallic element contained in the bonding material preferably has a contact angle of not less than 15 degrees (inclusive) in the range of not less than 2000 ppm and not more than 5000 ppm with respect to copper (Cu) 25 DEG or less, and in this case, Shore hardness can be set to 1.1 or more and less than 1.5.

Example  2

The occurrence of cracks (cracks) in the target material when ITO was used as a flat sputtering target material and indium (In) was used as a first metal element in the bonding material and the content of the second metal element was changed was evaluated .

The size of the flat sputtering target material by ITO was 127 mm x 508 mm x 6.35 mm (length x width x thickness) and the same bonding material as used in Sample 2 or Sample 3 in Example 1 was used.

Sputtering was performed under the conditions that argon (Ar) was used as the sputter gas, the sputter pressure was 0.6 Pa, and the sputtering power density (DC) was 2.3 W / cm 2.

As a result of evaluating the appearance of the target material after sputtering, no occurrence of cracks or the like was observed.

Example  3

(In) is used as the first metal element in the bonding material, and titanium (Ti) is used as the second metal element. The present embodiment shows the results of evaluating samples different in content of titanium (Ti) relative to indium (In).

Sample 1 is indium (In) having a purity of 99.99%, which is the same as Example 1. Sample 7 is indium (In) containing 18 ppm of titanium (Ti), sample 8 is indium (In) containing 60 ppm of titanium (Ti), and sample 9 is indium (In) containing 120 ppm of titanium . Sample 6 is indium (In) containing 890 ppm of titanium (Ti), which is the same as that of Example 1.

In the present embodiment, indium (In) corresponds to the first metal element constituting the bonding material, and titanium (Ti) corresponds to the second metal element.

The base surface was evaluated by applying the same kind of metal to each sample on the ITO surface. This base surface has a state in which a surface of the target is subjected to ultrasonic welding treatment to apply a metal of the same kind as the bonding material.

Table 3 shows the results of evaluating each sample. A contact angle of 24.8 DEG for Sample 7 containing 18 ppm of titanium (Ti), 24.8 DEG of 24.8 DEG for Sample 8 containing 60 ppm of titanium (Ti), and 24.5 DEG of Sample 9 containing 120 ppm of titanium (Ti) On the other hand, the contact angle? Is obtained in the same manner as in the first embodiment.

[Table 3]

According to this embodiment, as the bonding material, titanium (Ti) corresponding to the second metal element is contained in indium (In) corresponding to the first metal element, and thus the contact angle is lowered. Specifically, a contact angle of not less than 24 ° and not more than 25 ° is obtained within a range of not less than 18 ppm and not more than 890 ppm of titanium (Ti) relative to indium (In).

From the results shown in Table 3, it was found that when the titanium (Ti) content was 18 ppm to 890 ppm, a contact angle of 25 DEG or less with respect to the base surface was obtained. That is, it was found that the contact angles of the samples 6 to 9 were all small in the sample 1, and the titanium (Ti) corresponding to the second metal element contained in the bonding material was contained in a concentration of 18 ppm or more and 890 ppm or less have.

Shore hardness of each sample shown in Table 3 was evaluated. Sample 8 having a Shore hardness of 1.28 HS and a titanium (Ti) content of 60 ppm in Sample 7 having a titanium (Ti) content of 18 ppm had Shore hardness of 1.09 HS in Sample 1 having indium (In) of 99.99% 1.52 HS and a sample 9 having a titanium (Ti) content of 120 ppm has a Shore hardness of 1.70 HS. On the other hand, the shore hardness was measured in accordance with the Shore hardness test method (JISZ2246) prescribed in Japanese Industrial Standards as in Example 1. [

[Table 4]

According to the results shown in Table 4, Shore hardness tends to increase when the content of titanium (Ti) increases with respect to indium (In). The hardness of indium (In) as a bonding material may affect the occurrence of cracks in the target, and it is preferable to adjust the Shore hardness to 1.7 or less, preferably 1.5 or less.

According to this embodiment, in the bonding material containing indium (In) as a main component, the second metal element contained in the bonding material is at least 18 ppm and not more than 120 ppm with respect to titanium (Ti) Or less, and in this case, Shore hardness can be set to 1.1 or more and 1.7 or less.

Example  4

Table 5 shows the Shore hardness of each sample when indium (In) was used as the first metal element in the bonding material and nickel (Ni) was used as the second metal element. This embodiment shows the results of evaluating samples having different contents of nickel (Ni) relative to indium (In).

Sample 1 is indium (In) having a purity of 99.99%, which is the same as Example 1. Sample 10 is indium (In) containing 44 ppm of nickel (Ni), sample 11 is indium (In) containing 250 ppm of nickel (Ni), and sample 12 is indium (In) containing 480 ppm of nickel .

In the present embodiment, indium (In) corresponds to the first metal element constituting the bonding material, and nickel (Ni) corresponds to the second metal element.

In Table 5, Sample 1 having indium (In) of 99.99% had a Shore hardness of 1.09HS while Sample 10 having a nickel (Ni) content of 44ppm had a Shore hardness of 1.12HS and a nickel (Ni) content of 250 ppm 11, a Shore hardness of 1.46 HS was obtained in Sample 12 having a Shore hardness of 1.21 HS and a nickel (Ni) content of 480 ppm. On the other hand, the shore hardness was measured in accordance with the Shore hardness test method (JISZ2246) prescribed in Japanese Industrial Standards as in Example 1. [

[Table 5]

According to the results shown in Table 5, Shore hardness tends to increase when the content of nickel (Ni) increases with respect to indium (In). The hardness of indium (In) as a bonding material may affect the occurrence of cracks in the target, and it is preferable to adjust the Shore hardness to 1.7 or less, preferably 1.5 or less.

According to this embodiment, in the bonding material containing indium (In) as a main component, at least 44 ppm or more of nickel (Ni) is contained as the second metal element contained in the bonding material, It is shown that the Shore hardness can be set to 1.1 or more and 1.7 or less in the range of 480ppm or less.

Comparative Example

Using the bonding materials corresponding to the samples 4 to 6 in the example 1, the same evaluation as described above was carried out. As a result of evaluation of the appearance of the target material after sputtering, occurrence of cracks or the like was confirmed.

According to this embodiment, it has been shown that cracking of the sputtering target material can be prevented by using a bonding material having good wettability and hardness (Shore hardness) within a predetermined range.

100 ... Cylindrical sputtering target
102 ... Cylindrical sputtering target material
104 ... Cylindrical substrate
106 ... binder
108 ... Gap portion
110 ... heater

Claims (11)

A plurality of cylindrical sputtering target members mounted on the cylindrical base material; and a bonding material formed between the cylindrical base material and the plurality of cylindrical sputtering target materials,
Wherein the plurality of cylindrical sputtering target materials comprise indium (In)
The bonding material includes indium (In) and copper (Cu)
The copper (Cu) is contained in a concentration of 2000 ppm by weight or more and 5,000 ppm by weight or less based on the indium (In)
Wherein each of the plurality of cylindrical sputtering target members has a gap and is mounted on the cylindrical base, and the bonding material is exposed to the gap portion. A plurality of cylindrical sputtering target members mounted on the cylindrical base material; and a bonding material formed between the cylindrical base material and the plurality of cylindrical sputtering target materials,
Wherein the plurality of cylindrical sputtering target materials comprise indium (In)
The bonding material includes indium (In) and titanium (Ti)
The titanium (Ti) is contained in a concentration of 18 ppm by weight or more and 60 ppm by weight or less based on the indium (In)
Wherein each of the plurality of cylindrical sputtering target members has a gap and is mounted on the cylindrical base, and the bonding material is exposed to the gap portion. A plurality of cylindrical sputtering target members mounted on the cylindrical base material; and a bonding material formed between the cylindrical base material and the plurality of cylindrical sputtering target materials,
Wherein the plurality of cylindrical sputtering target materials comprise indium (In)
Wherein the bonding material comprises indium (In) and nickel (Ni)
The nickel (Ni) is contained at a concentration of not less than 44 ppm by weight and not more than 480 ppm by weight based on the indium (In)
Wherein each of the plurality of cylindrical sputtering target members has a gap and is mounted on the cylindrical base, and the bonding material is exposed to the gap portion. The method according to claim 1,
Wherein the bonding material has a contact angle of not less than 16.4 DEG and not more than 16.7 DEG with respect to the ITO surface. 3. The method of claim 2,
Wherein the bonding material has a contact angle with respect to the ITO surface of less than 25.0 DEG. The method according to claim 1,
Wherein the bonding material has a Shore hardness of 1.20 or more and 1.49 or less. 3. The method of claim 2,
Wherein the bonding material has a Shore hardness of 1.28 or more and 1.70 or less. The method of claim 3,
Wherein the bonding material has a Shore hardness of 1.12 or more and 1.46 or less. 4. The method according to any one of claims 1 to 3,
Wherein the cylindrical sputtering target material is a ceramics sintered body containing indium (In). 10. The method of claim 9,
Wherein the ceramics sintered body contains indium oxide. 4. The method according to any one of claims 1 to 3,
And a surface roughness (Ra) of an outer surface of the cylindrical base material is 1.8 占 퐉 or more.

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