KR20180106720A - 분포 브래그 반사기 적층체를 구비하는 발광 다이오드 - Google Patents
분포 브래그 반사기 적층체를 구비하는 발광 다이오드 Download PDFInfo
- Publication number
- KR20180106720A KR20180106720A KR1020170035463A KR20170035463A KR20180106720A KR 20180106720 A KR20180106720 A KR 20180106720A KR 1020170035463 A KR1020170035463 A KR 1020170035463A KR 20170035463 A KR20170035463 A KR 20170035463A KR 20180106720 A KR20180106720 A KR 20180106720A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light emitting
- distributed bragg
- bragg reflectors
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims abstract description 160
- 229910052751 metal Inorganic materials 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 39
- 238000002310 reflectometry Methods 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 423
- 239000000463 material Substances 0.000 description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H01L33/10—
-
- H01L27/156—
-
- H01L33/60—
-
- H01L33/62—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170035463A KR20180106720A (ko) | 2017-03-21 | 2017-03-21 | 분포 브래그 반사기 적층체를 구비하는 발광 다이오드 |
| PCT/KR2018/002542 WO2018174425A1 (fr) | 2017-03-21 | 2018-03-02 | Diode électroluminescente comprenant un stratifié de réflecteur de bragg distribué |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170035463A KR20180106720A (ko) | 2017-03-21 | 2017-03-21 | 분포 브래그 반사기 적층체를 구비하는 발광 다이오드 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180106720A true KR20180106720A (ko) | 2018-10-01 |
Family
ID=63584657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170035463A Withdrawn KR20180106720A (ko) | 2017-03-21 | 2017-03-21 | 분포 브래그 반사기 적층체를 구비하는 발광 다이오드 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20180106720A (fr) |
| WO (1) | WO2018174425A1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11387383B2 (en) * | 2019-02-14 | 2022-07-12 | Seoul Viosys Co., Ltd. | Method of transferring light emitting device for display and display apparatus |
| CN113924662B (zh) * | 2019-05-29 | 2025-01-21 | 首尔伟傲世有限公司 | 具有悬臂电极的发光元件、具有其的显示面板及显示装置 |
| TWI762234B (zh) | 2021-03-12 | 2022-04-21 | 錼創顯示科技股份有限公司 | 發光元件及顯示面板 |
| CN113036008B (zh) * | 2021-03-12 | 2023-11-03 | 錼创显示科技股份有限公司 | 发光元件及显示面板 |
| CN115692563B (zh) * | 2022-11-07 | 2025-07-15 | 江西兆驰半导体有限公司 | 一种倒装blu发光二极管芯片及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050023184A (ko) * | 2003-08-27 | 2005-03-09 | 주식회사 옵토웰 | 수직공진 발광 소자 및 그 제조방법 |
| KR20090072980A (ko) * | 2007-12-28 | 2009-07-02 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조방법 |
| KR20110053064A (ko) * | 2009-11-13 | 2011-05-19 | 서울옵토디바이스주식회사 | 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지 |
| KR101138952B1 (ko) * | 2010-09-24 | 2012-04-25 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| KR20140073351A (ko) * | 2012-12-06 | 2014-06-16 | 엘지이노텍 주식회사 | 발광 소자 |
-
2017
- 2017-03-21 KR KR1020170035463A patent/KR20180106720A/ko not_active Withdrawn
-
2018
- 2018-03-02 WO PCT/KR2018/002542 patent/WO2018174425A1/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018174425A1 (fr) | 2018-09-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20170321 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination |