KR20180090412A - Substrate treating apparatus and hand - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a hand. According to an aspect of the present invention, there is provided a substrate processing apparatus including: a transfer frame for providing a space through which a substrate is transferred; And a robot positioned inside the space and transferring the substrate from one position to another position, the robot comprising: an arm; A hand connected to the arm for supporting the substrate, the hand comprising: an upper layer providing an upper structure; An underlying layer providing an underlying structure; And a communication shaft inserted into the inside of the hand along the longitudinal direction of the hand and provided with a metal material.

Description

[0001] DESCRIPTION [0002] Substrate processing apparatus and hand [0003]

The present invention relates to a substrate processing apparatus and a hand.

Various processes such as photo, etching, deposition, ashing, ion implantation, and cleaning are performed to manufacture semiconductor devices and flat panel displays. A substrate processing system for carrying out these processes is provided with a plurality of units, and the substrate is transported between the respective units by the transport apparatus.

The transfer device has a hand on which the substrate is seated. The substrate is fixed to the hand by various methods such as clamping and vacuum suction. Generally, the hand is provided with a material with high electrical insulation. This is to prevent the charge remaining on the hand from damaging the substrate.

However, the substrate is subjected to various processes such as a liquid treatment process, a gas treatment process, and a plasma treatment process, and the substrate is charged while the process is being performed. Particularly, the substrate is more easily charged in the plasma treatment process for generating the radical (Radical). When the substrate on which the charge is charged is placed on the hand, a force such as static electricity is generated between the hand and the substrate.

Accordingly, in the process of transporting the substrate placed on the hand to the substrate receiving apparatus, the substrate is not properly separated from the hand, and the substrate is frequently damaged.

The present invention is to provide a substrate processing apparatus and a hand capable of efficiently transferring a substrate.

According to an aspect of the present invention, there is provided a display device comprising: a transport frame for providing a space through which a substrate is transferred; And a robot positioned inside the space and transferring the substrate from one position to another position, the robot comprising: an arm; A hand connected to the arm for supporting the substrate, the hand comprising: an upper layer providing an upper structure; An underlying layer providing an underlying structure; And a communication shaft inserted into the inside of the hand along the longitudinal direction of the hand and provided with a metal material.

In addition, the hand may further include a seating pad provided at one end of the substrate on which the substrate is disposed, and the communication axis may be connected to the seating pad.

The hand may further include a seating pad disposed at one side of the substrate where the substrate is positioned and provided in the form of a plate having a hole formed therein and an exhaust portion connected to the hole of the seating pad is formed in the communication axis .

The hand may further include a reinforcing layer positioned between the upper layer and the lower layer.

The reinforcing layer may include a first material portion formed at a predetermined interval along one direction; And a second work part positioned between the first work part.

The first material portion may be provided in the same material as the lower layer.

Also, the second work part may be provided with a metal material.

The reinforcing layer may include a first reinforcing layer formed on an upper surface of the lower layer; And a second reinforcing layer formed on the upper surface of the first reinforcing layer.

.

The first material portion of the second reinforcing layer may be formed in a direction crossing the first material portion of the first reinforcing layer.

Further, the communication axis may be provided so as to be positioned over the reinforcing layer.

Also, the second work part may be provided in a direction intersecting the communication axis, and may be connected to the communication axis.

Also, the second work part may be provided with the same material as the communication shaft.

Also, the hand may be formed by a 3D printing method.

According to another aspect of the present invention, there is provided a semiconductor device comprising: an upper layer providing a superstructure; An underlying layer providing an underlying structure; And a hand inserted into the hand along the longitudinal direction of the hand and including a communication shaft provided with a metallic material.

Further, it may further comprise a reinforcing layer positioned between the upper layer and the lower layer.

The reinforcing layer may include a first material portion formed at a predetermined interval along one direction; And a second work part positioned between the first work part.

Also, the second work part may be provided with a metal material.

Further, the communication axis may be provided so as to be positioned over the reinforcing layer.

Also, the second work part may be provided in a direction intersecting the communication axis, and may be connected to the communication axis.

Also, the second work part may be provided with the same material as the communication shaft.

According to an embodiment of the present invention, a substrate processing apparatus and a hand capable of efficiently transferring a substrate can be provided.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view showing a substrate receiving unit;
3 is a view of a plasma processing apparatus provided in one or more of the process chambers of FIG.
4 is a view showing a hand.
5 to 10 are views showing the layered structure of the hand.
11 is a view showing a part of the communication shaft.
12 is a view showing a part of a communication shaft according to another embodiment.

Hereinafter, embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 6 attached hereto. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1 has an equipment front end module (EFEM) 20 and a processing module 30. The facility front end module 20 and the processing module 30 are arranged in one direction. The direction in which the facility front end module 20 and the processing module 30 are arranged is referred to as a first direction X and the direction perpendicular to the first direction X as viewed from above is referred to as a second direction Y).

The apparatus front end module 20 has a load port 10 and a transport frame 21. [ The load port 10 is disposed in front of the transport frame 21 facing the first direction X. The load port (10) has a plurality of support portions (6). Each supporting portion 6 is arranged in a line in the second direction Y, and the substrate receiving unit 4 is seated. The substrate receiving unit 4 is provided with a receiving space 522 in which the substrate W to be supplied to the process and the substrate W to which the process has been completed can be accommodated. For example, the substrate receiving unit 4 may be a carrier or a FOUP.

2 is a cross-sectional view showing a substrate receiving unit;

Referring to FIG. 2, the substrate receiving unit 4 includes a housing 520 and a support slot 540. The housing 520 is provided in a cylindrical shape with one side openable. Here, the openable surface is provided with an inlet through which the substrate W can be taken in and out. In the interior of the housing 520, a receiving space 522 in which the substrate W can be accommodated is provided. The support slot 540 supports the substrate W in the receiving space 522. The support slot 540 supports a plurality of substrates W. The plurality of substrates W may be arranged vertically in the accommodation space 522 by the support slots 540. [ The support slot 540 includes one side slot 542 and the other side slot 544. One side slot 542 supports one side of the substrate W and the other side slot 544 supports the other side of the substrate W. [ Each of the one side slot 542 and the other side slot 544 is provided in plural. One of the slots 542 is fixedly coupled to the inner wall of the housing 520. One of the slots 542 is arranged vertically away from each other. The other slots 544 are positioned to face one of the slots 542. The other slots 544 are positioned one-to-one with the one slots 542.

The transport frame 21 is disposed between the load port 10 and the processing module 30. A first transfer space 23 for transferring the substrate W is provided in the transfer frame 21. The first transporting robot 25 for transporting the substrate W between the load port 10 and the processing module 30 is located in the first transporting space 23. The first conveying robot 25 moves along the conveying rail 27 provided in the second direction 12 to convey the substrate W between the substrate receiving unit 4 and the process processing module 30. [

Process processing module 30 includes a load lock chamber 40, a transfer chamber 50, and a process chamber 60.

The load lock chamber 40 is disposed adjacent to the transfer frame 21. [ In one example, the load lock chamber 40 may be disposed between the transfer chamber 50 and the equipment front end module 20. The load lock chamber 40 is a space that waits before the substrate W to be supplied to the process is transferred to the process chamber 60 or before the processed substrate W is returned to the equipment front end module 20 .

The transfer chamber 50 is disposed adjacent to the load lock chamber 40. The transfer chamber 50 has a polygonal body when viewed from the top. For example, the transfer chamber 50 may be provided in a pentagonal or hexagonal shape. A load lock chamber 40 and a plurality of process chambers 60 are disposed around the transfer chamber 50. A gate valve 55 is provided between the transfer chamber 50 and the process chamber 60 and between the transfer chamber 50 and the load lock chamber 40 to shut off the internal atmosphere therebetween. The process chamber 60 can be sealed by the gate valve 55 in its internal space.

In the transfer chamber 50, a second transfer space 54 through which the substrate W is transferred is formed. A second transfer robot 53 for transferring the substrate W is disposed in the second transfer space 54. [ The second transfer robot 53 transfers the substrate W between the load lock chamber 40 and the process chamber 60 or between the process chamber 60 and the process chamber 60. The second transfer robot 53 transfers the unprocessed substrate W waiting in the load lock chamber 40 to the process chamber 60 or transfers the processed substrate W to the load lock chamber 40 do. And transports the substrate W between the process chambers 60 in order to sequentially provide the substrates W to the plurality of process chambers 60. [ 1, when the transfer chamber 50 has a pentagonal body, a load lock chamber 40 is disposed on each of the side walls adjacent to the facility front end module 20, and a process chamber 60 is continuously provided on the remaining side walls. . The transfer chamber 50 may be provided in various forms depending on the shape, as well as the required process module.

The process chamber 60 is disposed along the periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. In each of the process chambers 60, the processing of the substrate W proceeds. According to one example, the process may be a plasma process. The process chamber 60 transfers the substrate W from the second transfer robot 53 to process the wafer W and provides the processed substrate W to the second transfer robot 53. The process processes in each of the process chambers 60 may be different from each other.

3 is a view of a plasma processing apparatus provided in one or more of the process chambers of FIG.

Referring to FIG. 3, a plasma processing apparatus 100 performs a predetermined process on a substrate W using a plasma. In one example, the plasma processing apparatus 100 may etch the thin film on the substrate W. [ The thin film may be a variety of films such as a polysilicon film, a silicon oxide film, and a silicon nitride film. Further, the thin film may be a natural oxide film or a chemically generated oxide film.

The plasma processing apparatus 100 has a chamber 120, a plasma generating chamber 140, a substrate supporting unit 200, a process gas supply unit 280, and a baffle 500.

The chamber 120 provides a processing space 122 through which the substrate W is processed by the plasma. The chamber 120 has a processing space 122 having an upper open inside. The chamber 120 may be provided in a generally cylindrical shape. An opening 121 is provided in the side wall of the chamber 120. The opening 121 serves as an inlet and an outlet through which the substrate W is carried in and out. The opening 121 is opened and closed by the gate valve 55. The gate valve 55 closes the opening 121 during the processing of the substrate W in the chamber 120 and when the substrate W is carried into / out of the chamber 120 The opening 121 is opened.

An exhaust hole 124 is formed in the lower portion of the chamber 120. An exhaust line 126 is connected to the exhaust hole 124. The exhaust line 126 is provided with a pump 128. The pump 128 regulates the pressure in the chamber 120 to process pressure. The residual gas and plasma in the chamber 120 are exhausted to the outside of the chamber 120 through the exhaust line 126. At this time, the residual gas and the plasma staying in the chamber 120 can be exhausted to the exhaust plate 260 and the exhaust hole 124. A wall heater 129 may be provided outside the chamber 120. The wall heater 129 may be provided in a coil shape. Optionally, the wall heater 129 may be provided inside the outer wall of the processing unit 100.

The plasma generating chamber 140 provides a discharge space 149 in which plasma is generated from the process gas. The plasma generating chamber 140 is located outside the chamber 120. According to one example, the plasma generating chamber 140 is located at the top of the chamber 120 and is coupled to the chamber 120. The plasma generating chamber 140 has a gas port 142, a discharge chamber 144, and a diffusion chamber 146. The gas port 142, the discharge chamber 144, and the diffusion chamber 146 are sequentially provided in a direction from top to bottom. The gas port 142 is supplied with gas from the outside. The discharge chamber 144 has a hollow cylindrical shape. The discharge space 149 is provided so as to have a cross sectional area narrower than the processing space 122 as viewed from above. The plasma is generated from the process gas provided in the discharge chamber 144. The diffusion chamber 146 supplies the plasma generated in the discharge chamber 144 to the processing space 122. The diffusion chamber 146 has a diameter gradually widening downward. The lower end of the diffusion chamber 146 is engaged with the upper end of the chamber 120, and a sealing member (not shown) is provided therebetween for sealing against the outside.

The substrate supporting unit 200 supports the substrate W in the processing space. The substrate support unit 200 has a support plate 220 and a support shaft 240. The support plate 220 is disposed in the space 121 and is provided in a disc shape. The support plate 220 is supported by a support shaft 240. The substrate W is placed on the upper surface of the support plate 220. An electrode (not shown) is provided inside the support plate 220, and the substrate W can be fixed to the support plate 220 by an electrostatic force. Alternatively, the substrate W may be secured to the support plate 220 by a mechanical clamp, or may be placed on the support plate 220 without additional securing means. A heating member 222 may be provided inside the support plate 220. According to one example, the heating member 222 may be provided as a hot wire. Further, a cooling member 224 may be provided inside the support plate 220. The cooling member 224 may be provided as a cooling line through which cooling water flows. The heating member 222 heats the substrate W to a predetermined temperature and the cooling member 224 prevents the substrate W from being overheated. Alternatively, the heating member 222 or the cooling member 224 may be omitted in the plasma processing apparatus 100. [

The process gas supply unit 280 includes a gas supply unit 300 and a plasma source 400. The process gas supply unit 280 supplies the process gas to the process space 122.

The gas supply unit 300 has a first gas supply member 320 and a second gas supply member 340.

The first gas supply member 320 includes a first gas supply line 322 and a first gas storage unit 324. The first gas supply line 322 is coupled to the gas port 142. The first gas supplied through the gas port 142 flows into the discharge space 149 and is excited in the discharge space 149. The first gas may include oxygen (O2), nitrogen (N2), and nitrogen (CH2F2). Optionally, the first gas may further comprise other types of gases such as CF4 (tetrafluoromethane).

The second gas supply member 340 has a second gas supply line 342 and a second gas storage 344. The second gas is supplied on the path through which the plasma generated from the first gas flows into the chamber 120. According to one example, the second gas supply line 342 is coupled to the discharge chamber 144 in a region below the antenna 420 described later. The second gas may include nitrogen trifluoride (NF3).

Alternatively, the gas supply unit 300 may be omitted from the second gas supply member 340, and only the first gas supply member 320 may be provided.

The plasma source (400) generates a plasma from the first gas in the discharge space (149). According to one example, the plasma source 400 may be an inductively coupled plasma source 400. The plasma source 400 has an antenna 420 and a power supply 440. The antenna 420 is provided outside the discharge chamber 144 and is provided to surround the discharge chamber 144 a plurality of times. One end of the antenna 420 is connected to the power supply 440, and the other end is grounded. The power source 440 applies power to the antenna 420. According to an example, the power source 440 may apply a high frequency power to the antenna 420.

The baffle 500 is positioned between the chamber 120 and the plasma generation chamber 140. The baffle 500 includes a baffle hole 522. The baffle 500 maintains the density and flow of the plasma uniformly throughout the entire region within the chamber 120 when the plasma is supplied to the substrate W. [ The plasma may be supplied through the baffle hole 522.

Next, the first transport robot 25 located in the transport frame 21 will be described in more detail. The first transport robot 25 transports the substrate W while holding the substrate W by vacuum suction. The first conveying robot 25 includes an arm 24, a driving member (not shown), a hand 26, and a pressure-reducing member 680. The arm 24 connects the driving member and the hand 26 to each other. The arm 24 supports the hand 26. A hand 26 can be fixedly coupled to the arm 24. The driving member (not shown) moves the hand 26 in various directions. The driving member (not shown) moves the hand 26 forward, backward, up and down, and rotates. Here, the forward and backward movements may be linear movements toward the horizontal direction. The arm 24 is provided to be grounded. For example, the arm 24 may be provided with a material containing a metal. The arm 24 may be provided with a material containing aluminum. The driving member (not shown) may be a motor.

4 is a view showing a hand.

Referring to FIG. 4, the hand 26 includes a seating pad 670.

Hereinafter, the portion where the hand 26 is connected to the arm 24 is referred to as one end and the opposite end of the one end is referred to as the other end, with reference to the longitudinal direction L of the hand 26. [

The seating pad 670 is provided in a region where the substrate W is located. For example, the hand 26 may be provided to support the substrate W at the other end, and the seating pad 670 may be provided at the other end.

The seating pad 670 is provided in the form of a plate having a hole formed therein. For example, the seating pad 670 may be in the form of an annular ring. The hollow 652 of the seating pad 670 functions as a hole to which vacuum pressure is applied to vacuum adsorb the substrate W. [ The seating pad 670 may be provided to have a smaller width than the substrate W. [ Therefore, the contact area between the seating pad 670 and the substrate W is minimized, so that the hand wasting of the substrate W due to friction can be prevented.

According to one example, the seating pad 670 may be provided with a material including a base metal. Thus, damage of the substrate W due to friction between the substrate W and the seating pad 670 can be prevented. The seating pad 670 may be provided with a material including conductivity. The seating pad 670 may be provided with a material containing silicon carbide (SiC).

The hand 26 is connected to the pressure reducing member 680 through the pressure reducing pipe 681. The pressure-sensitive member 680 provides a negative pressure for adsorption of the substrate W to the hollow of the seating pad 670. The hand 26 is grounded via the discharge line 690. In one example, the discharge line 690 may be an arm 24. Thus, the charge of the hand 26 can be discharged through the arm 24. [ As another example, the discharge line 690 may be provided as a wire that is separate from the arm 24.

Figs. 5 to 10 are views showing a layered structure of a hand, and Fig. 11 is a view showing a part of a communication shaft.

5-11, the hand 26 includes a bottom layer 610, an upper layer 660, and a communication shaft 640.

The lower layer 610 provides the underlying structure of the hand 26. The lower layer 610 is provided so as to have a predetermined thickness in the vertical direction. The lower layer 610 may be provided as a ceramic.

The upper layer 660 provides the upper structure of the hand 26. The upper layer 660 is provided so as to have a predetermined thickness in the vertical direction. The upper layer 660 may be provided as a ceramic.

The communication shaft 640 is provided in such a manner that it is inserted into the inside of the hand 26. In one example, the communication shaft 640 may be provided in a manner that it is inserted into the upper layer 660 or the lower layer 610. The communication shaft 640 is provided in a rod shape extending in the longitudinal direction L of the hand 26. [ The communication shaft 640 is made of a conductive material. The communication shaft 640 may be made of a metal material. The communication shaft 640 is provided to be connected to the seating pad 670 and the discharge line 690. Therefore, the electric charge of the substrate W is discharged to the discharge line 690 through the seating pad 670 and the communication shaft 640. An exhaust portion 641 is formed in the communication shaft 640. The exhaust portion 641 may be provided as a hole formed inside the communication shaft 640. The communication shaft 640 is connected to the hole formed in the seating pad 670 and the pressure reducing pipe 681, respectively. Accordingly, the negative pressure provided by the pressure-reducing member 680 is transmitted to the holes of the seating pad 670 to adsorb the substrate W. [

At least one reinforcing layer 620, 630, 650 may be formed between the upper layer 660 and the lower layer 610. Hereinafter, the case where three reinforcing layers 620, 630 and 650 are formed will be described as an example. However, the number of the reinforcing layers 620, 630, 650 is not limited thereto, and may be formed to be smaller or larger than three.

The first reinforcing layer 620 is formed on the upper surface of the lower layer 610. The first reinforcing layer 620 is formed by alternately forming the first and second work portions 620a and 620b. The first work portions 620a may be formed along one direction at a predetermined interval. The second work portions 620b may be formed between the first work portions 620a. For example, the first work portions 620a may be formed in a direction intersecting the longitudinal direction L with a predetermined interval along the longitudinal direction L. [ The second work portions 620b may be formed in a space formed between the first work portions 620a in a direction crossing the longitudinal direction L. [ The first material portion 620a is provided in the same material as the lower layer 610, so that the adhesion with the lower layer 610 can be improved. The second material portion 620b is provided as a material having a higher strength than the first material portion 620a. For example, the second work portion 620b may be provided with a metal material.

The second reinforcing layer 630 is formed on the upper surface of the first reinforcing layer 620. The second reinforcing layer 630 is formed in such a manner that the first and second work portions 630a and 630b are alternately disposed along one direction in a manner similar to the first reinforcing layer 620. [ The first material portion 630a and the second material portion 630b of the second reinforcing layer 630 are disposed in a direction intersecting the first material portion 620a and the second material portion 620b of the first reinforcing layer 620 . For example, the first work portions 630a may be formed in the longitudinal direction L with a predetermined interval in a direction intersecting the longitudinal direction L. [ The second work portions 630b may be formed in a space formed between the first work portions 630a in the longitudinal direction L. [ The first work part 630a is connected to the first work part 620a of the first reinforcing layer 620 along the longitudinal direction L and the second work part 630b is connected to the first work part 620b of the first reinforcement layer 620 along the longitudinal direction L The second reinforcing layer 630 is bonded to the second reinforcing layer 620b of the first reinforcing layer 620 so that the adhesion of the second reinforcing layer 630 to the first reinforcing layer 620 is improved.

The third reinforcing layer 650 is formed on the upper surface of the second reinforcing layer 630. The third reinforcing layer 650 is formed in such a manner that the first and second work portions 650a and 650b are alternately disposed along one direction in a manner similar to the first reinforcing layer 620. [ The first portion 650a and the second portion 650b of the third reinforcing layer 650 are disposed in a direction intersecting the first portion 630a and the second portion 630b of the second reinforcing layer 630 . For example, the first and second workpieces 650a and 650b may be formed along the same direction as the first reinforcing layer 620. The first material portion 650a is connected to the first material portion 630a of the second reinforcing layer 630 and the second material portion 650b is connected to the second material portion 630b of the second reinforcing layer 630. [ And the third reinforcing layer 650 is improved in adhesion to the second reinforcing layer 630. [ The first material portion 650a and the second material portion 650b intersect with the first material portion 630a and the second material portion 630b of the second reinforcing layer 630, And may be formed in a direction intersecting with the first and second work portions 620a and 620b.

When the reinforcing layers 620, 630 and 650 are formed, the communicating shaft 640 may be provided in such a manner that the reinforcing layers 620, 630 and 650 are inserted into the reinforcing layers 620, 630 and 650. The communication shaft 640 may be provided to the reinforcing layers 620 and 650 provided so that the longitudinal direction of the second work portions 620b and 650b intersects the longitudinal direction of the communication shaft 640. [ For example, the communication axis 640 may be formed in the third reinforcing layer 650. Therefore, the reinforcing layers 620 and 650 may be connected to the second material portions 620b and 650b to increase the bonding strength. Further, the second work portions 620b and 650b are provided with the same material as the communication shaft 640, so that the coupling with the communication shaft 640 can be improved.

In addition, the communication shaft 640 may be formed over two or more of the reinforcing layers 620, 630, and 650. Also, the communication shaft 640 may be formed over the reinforcing layers 620, 630, 650 and the lower layer 610. Further, the communication shaft 640 may be formed over the reinforcing layers 620, 630, and 650 and the upper layer 660.

The hand 26 can be produced by a 3D printer. Specifically, the hand 26 can be printed in the direction of the upper structure in the lower structure of the hand 26 or in the direction of the lower structure in the upper structure of the hand 26, through the material provided in powder form. In the above-described example, the second work part 620b is formed at an interval formed between the first work parts 620a, but this is merely an example. That is, when the reinforcing layers 620, 630, and 650 are formed through the 3D printer, the 3D printer includes the first work portions 620a, 630a, 650a and the second work portions 620b, 630b, Or the first work portions 620a, 630a, and 650a may be formed after the second work portions 620b, 630b, and 650b are formed.

According to an embodiment of the present invention, the strength of the hand 26 can be increased by the communication shaft 640 or the communication shaft 640 and the second work portions 620b, 630b, have. In addition, as the strength per unit volume increases, the thickness of the hand 26 can be reduced, and workability can be improved through the hand 26. [ Further, the communication shaft 640 can discharge the electric charge to the outside while improving the strength of the hand 26. [

12 is a view showing a part of a communication shaft according to another embodiment.

12, the exhaust part 645 may be provided in the form of a groove formed on the upper surface or the lower surface of the communication shaft 640b. As the hands 26 are laminated and formed, the open portion of the vent 645 may be tubular covered by the bottom layer 610, the top layer 660 or the stiffening layers 620, 630, 650.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

10: load port 20: equipment front end module
21: carrier frame 26: hand
30: process processing module 40: load lock chamber
50: Transfer chamber 60: Process chamber

Claims (20)

A transfer frame for providing a space through which the substrate is transferred;
And a robot positioned inside the space and transferring the substrate from one position to another position,
The robot includes:
Arm;
And a hand connected to the arm for supporting the substrate,
The hand comprises:
An upper layer providing a superstructure;
An underlying layer providing an underlying structure; And
And a communication shaft inserted into the inside of the hand along the longitudinal direction of the hand and provided with a metal material. The method according to claim 1,
The hand comprises:
Further comprising a seating pad provided at one end of the substrate on which the substrate is disposed, the seating pad being made of a conductive material,
And the communication shaft is connected to the seating pad. The method according to claim 1,
The hand comprises:
Further comprising a seating pad located at one end of the substrate where the substrate is positioned and provided in a plate shape having a hole formed therein,
And an exhaust part connected to the hole of the seating pad is formed on the communication shaft. 4. The method according to any one of claims 1 to 3,
Wherein the hand further comprises a stiffening layer positioned between the top layer and the bottom layer. 5. The method of claim 4,
The reinforcing layer
A first work part formed at a predetermined interval along one direction; And
And a second work portion positioned between the first work portions. 6. The method of claim 5,
Wherein the first material portion is provided in the same material as the lower layer. 6. The method of claim 5,
And the second workpiece is provided as a metal material. 5. The method of claim 4,
Wherein the reinforcing layer comprises: a first reinforcing layer formed on an upper surface of the lower layer; And
And a second reinforcing layer formed on an upper surface of the first reinforcing layer. 9. The method of claim 8,
Wherein the first portion of the second reinforcing layer is formed in a direction crossing the first portion of the first reinforcing layer. 6. The method of claim 5,
Wherein the communication axis is provided to be positioned over the reinforcing layer. 11. The method of claim 10,
Wherein the second workpiece is provided in a direction intersecting with the communication shaft and is connected to the communication shaft. 12. The method of claim 11,
And the second workpiece is provided in the same material as the communication shaft. The method according to claim 1,
Wherein the hand is formed by a 3D printing method. An upper layer providing a superstructure;
An underlying layer providing an underlying structure; And
And a communication shaft inserted into the inside of the hand along the longitudinal direction of the hand and provided with a metallic material. 15. The method of claim 14,
And a reinforcing layer positioned between the upper layer and the lower layer. 16. The method of claim 15,
The reinforcing layer
A first work part formed at a predetermined interval along one direction; And
And a second material portion positioned between the first material portions. 17. The method of claim 16,
And the second material portion is provided as a metal material. 17. The method of claim 16,
Wherein the communication shaft is provided to be positioned over the reinforcing layer. 19. The method of claim 18,
And the second work portion is provided in a direction intersecting with the communication shaft, and is connected to the communication shaft. 20. The method of claim 19,
And the second work portion is provided with the same material as the communication shaft.

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