KR20180078641A - Organic Light Emitting Device and Organic Light Emitting Display Apparatus using the same - Google Patents

Abstract

Each of the first pixel, the second pixel, and the third pixel includes an anode, an organic layer provided on the anode, and an organic layer on the organic layer Wherein the thickness of the anode provided in the first pixel, the thickness of the anode provided in the second pixel, and the thickness of the anode provided in the third pixel are different from each other, And an organic light emitting display using the same.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED)

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device that emits white light.

The organic light emitting device has a structure in which a light emitting layer is formed between a cathode for injecting electrons and an anode for injecting holes, and electrons generated in the cathode and holes generated in the anode are injected into the light emitting layer When excited, excited electrons and holes are coupled to generate excitons, and the generated excitons emit light while falling from the excited state to the ground state.

Such an organic light emitting device can be applied not only to illumination but also to a thin light source or a display device of a liquid crystal display device. In particular, an organic light emitting device that emits white light can be applied to a full color display device in combination with a color filter.

Hereinafter, a conventional organic light emitting device will be described with reference to the drawings.

1 is a schematic cross-sectional view of a conventional organic light emitting device.

1, a conventional organic light emitting device includes an anode, a first stack, a charge generating layer (CGL), a second stack (second stack), and a cathode. .

The first stack (Stack) is formed on the anode to emit blue (B) light. The first stack includes a hole injecting layer (HIL), a hole transporting layer (HTL), a blue (B) emission layer (EML), and an electron transporting layer Layer (ETL).

The charge generation layer CGL may be formed between the first stack and the second stack so that charge is generated between the first stack and the second stack Balanced control.

The second stack (2nd Stack) may be formed between the charge generation layer (CGL) and the cathode to emit yellow green (YG) light. The second stack includes a hole transport layer (HTL), a light emitting layer (EML) of yellowish green (YG), an electron transport layer (ETL), and an electron injection layer (EIL).

In the conventional organic light emitting device, the light of blue (B) emitted from the first stack (Stack) and the light of yellow (YG) emitted by the second stack (second stack) Lt; / RTI >

On the other hand, a method of improving the luminous efficiency of an organic light emitting diode through a micro cavity effect has been proposed. The microcavity effect is to enhance the efficiency of light emitted using the constructive interference of light.

In order to obtain the microcavity effect, the thickness of the organic layer is set differently for the red pixel, the green pixel, and the blue pixel in the conventional case. However, when the thickness of the organic layer is set differently for each pixel, the manufacturing process becomes complicated and the productivity is lowered.

SUMMARY OF THE INVENTION The present invention has been devised to overcome the above-mentioned conventional drawbacks, and it is an object of the present invention to provide an organic light emitting diode capable of obtaining a microcavity effect without setting the thickness of an organic layer for each pixel differently, and an organic light emitting display .

In order to achieve the above object, the present invention provides a liquid crystal display device comprising a first pixel, a second pixel, and a third pixel, wherein each of the first pixel, the second pixel and the third pixel includes an anode, An organic layer, and a cathode provided on the organic layer, wherein the thickness of the anode, the thickness of the anode provided in the second pixel, and the thickness of the anode provided in the third pixel are Thereby providing an organic light-emitting device which is different from each other.

The present invention also includes a thin film transistor layer provided on a substrate and an organic light emitting element provided on the thin film transistor layer, wherein the organic light emitting element includes a first pixel, a second pixel, and a third pixel Wherein each of the first pixel, the second pixel, and the third pixel includes an anode, an organic layer provided on the anode, and a cathode provided on the organic layer, wherein the thickness of the anode provided in the first pixel, The thickness of the anode provided in the second pixel, and the thickness of the anode provided in the third pixel are different from each other.

The present invention has the following effects.

According to an embodiment of the present invention, instead of setting the thicknesses of the organic layers differently for each pixel, the thickness of the anode is set differently for each pixel to realize a microcavity effect, so that the manufacturing process can be easily performed and the luminous efficiency can be improved .

1 is a schematic cross-sectional view of a conventional organic light emitting device.
2 is a schematic cross-sectional view of an organic light emitting diode according to an embodiment of the present invention, which shows only one pixel.
FIG. 3 is a graph showing the change in the intensity of light emitted by the wavelength band when the thickness of the anode is varied in the structure of FIG.
4A is a schematic cross-sectional view of an organic light emitting device having red (R), green (G), and blue (B) pixels according to an embodiment of the present invention.
FIG. 4B is a schematic cross-sectional view of an organic light emitting device having red (R), green (G), and blue (B) pixels according to another embodiment of the present invention.
5 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention, which shows only one pixel.
FIG. 6 is a graph showing changes in the intensity of light emitted by the wavelength band when the thickness of the anode is varied in the structure of FIG.
7A is a schematic cross-sectional view of an organic light emitting element having red (R), green (G), and blue (B) pixels according to another embodiment of the present invention.
7B is a schematic cross-sectional view of an organic light emitting device having red (R), green (G), and blue (B) pixels according to another embodiment of the present invention.
FIG. 8A is a graph showing changes in the intensity of light emitted by the organic light emitting device according to FIG. 7A and the wavelength of the blue (B) pixel of the organic light emitting device according to FIG. 4A.
FIG. 8B is a graph showing changes in the emission intensity of the green (G) pixels of the organic light emitting device according to FIG. 7A and the organic light emitting device according to FIG.
FIG. 8C is a graph showing the variation of the emission intensity of the red (R) pixel of the organic light emitting device according to FIG. 7A and the organic light emitting device according to FIG.
9 is a graph showing a change in the intensity of light emitted by a blue pixel in accordance with a change in thickness of an anode.
10 is a graph showing the change in luminescence intensity by wavelength band depending on the type of the blue dopant.
11 is a schematic cross-sectional view of an OLED display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

2 is a schematic cross-sectional view of an organic light emitting diode according to an embodiment of the present invention, which shows only one pixel.

2, the organic light emitting diode according to an exemplary embodiment of the present invention includes a reflective layer, an anode, a first stack, a charge generation layer (CGL), a second stack ), And a cathode (cathode).

The reflective layer is formed below the anode to emit light emitted from the first stack, the second stack, and the third stack, (Cathode) direction.

The anode may be formed on the reflective layer and include a transparent conductive layer having a high work function. The transparent conductive layer may be formed of ITO (Indium Tin Oxide), IZO (indium zinc oxide), SnO ₂ or ZnO, but is not limited thereto.

The first stack (Stack) is formed on the anode to emit blue (B) light. The first stack may include a hole injection layer (HIL), a first hole transporting layer (HTL), a first emission layer (EML), and a first hole transport layer And a first electron transport layer (1st ETL).

The hole injecting layer HIL is formed on the anode and may be formed of MTDATA (4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine), CuPc (copper phthalocyanine) or PEDOT / PSS , 4-ethylenedioxythiophene, and polystyrene sulfonate). However, the present invention is not limited thereto. The hole injection layer (HIL) may be formed by doping a P-type dopant into the first hole transport layer .

The first HTL may be formed on the hole injection layer (HIL), and may be TPD (N, N'-diphenyl-N, N'-bis (3-methylphenyl) phenyl-4,4'-diamine, NPD (N, N-diphenyl benzidine), or NPB (N, N'- -benzidine), and the like, but the present invention is not limited thereto. The first HTL may be formed of the same material as that of the HIL except that the P type dopant is not included. In this case, in the same process equipment, (HIL) and a first hole transport layer (1st HTL).

The first emission layer (1st EML) is formed on the first HTL (1st HTL). The first emission layer (1st EML) is composed of a blue emission layer that emits blue (B) light.

The first EML may include an organic material capable of emitting blue light, for example, a blue light having a peak wavelength in the range of 440 nm to 480 nm.

The first EML may be doped with a blue dopant to at least one host material selected from the group consisting of an anthracene derivative, a pyrene derivative and a perylene derivative. But the present invention is not limited thereto.

The first ETL may be formed on the first EML and may include carbazole, oxadiazole, triazine, triazole, phenanthrol, Phenanthroline, benzoxazole or benzthiazole, but the present invention is not limited thereto.

The charge generation layer CGL may be formed between the first stack and the second stack so that charge is generated between the first stack and the second stack It plays a role of balancing.

The charge generation layer (CGL) may include an N-type charge generation layer formed on the first stack and positioned adjacent to the first stack, and an N-type charge generation layer formed on the N-type charge generation layer, And a P-type charge generation layer located adjacent to the second stack (2nd Stack).

The N-type charge generation layer injects electrons into the first stack, and the P-type charge generation layer injects holes into the second stack. The N-type charge generation layer may be composed of an organic layer doped with an alkali metal such as Li, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The P-type charge generation layer may be doped with an organic material having a hole transporting ability.

The second stack (2nd Stack) may be formed on the charge generation layer (CGL) to emit yellow-green (YG) light.

The second stack (2nd Stack) includes a second HTL, a second EML, a second ETL, and an EIL.

The second hole transport layer (2nd HTL) is formed on the first charge generation layer (1st CGL), and TPD (N, N'-diphenyl-N, N'- -bi-phenyl-4,4'-diamine, NPD (N-dinaphthyl-N, N'-diphenyl benzidine), or NPB (naphthalen- '-diphenyl-benzidine), and the like, but the present invention is not limited thereto. The second HTL may be made of the same material as the first HTL, but may be made of a material different from the first HTL.

The second emission layer (2nd EML) is formed on the second HTL (2nd HTL).

The second emission layer (2nd EML) may include an organic material emitting yellowgreen (YG) light, for example, light having a peak wavelength in a range of 520 nm to 620 nm, and specifically, a carbazole-based compound or a metal complex The phosphorescent host material may be doped with a phosphorescent dopant of a yellow-green color. The carbazole-based compound may include CBP (4,4-N, N'-dicarbazole-biphenyl), CBP derivative, mCP (N, N'-dicarbazolyl-3,5-benzene) The metal complex may include ZnPBO (phenyloxazole) metal complex or ZnPBT (phenylthiazole) metal complex.

The second electron transport layer (2nd ETL) is formed on the second emission layer (2nd EML), and is formed of carbazole, oxadiazole, triazine, triazole, phenanthrol Phenanthroline, benzoxazole or benzthiazole, but the present invention is not limited thereto.

The second electron transport layer (2nd ETL) may be made of the same material as the first electron transport layer (1st ETL), but is not limited thereto.

The electron injection layer (EIL) is formed on the second electron transport layer (2nd ETL), and may be formed of lithium fluoride (LiF) or lithium quinolate (LiQ), but is not limited thereto.

The cathode is formed on the second stack.

The cathode is made of a translucent electrode. The cathode may have a transmittance in the range of 20% to 70% in the visible light region in order to obtain a microcavity effect described later. The cathode may be made of Mg: Ag, but is not limited thereto.

In the organic light emitting device according to an embodiment of the present invention, light of blue (B) emitted from the first stack (Stack) and light of yellow (YG) emitted from the second stack Light is mixed and white light is emitted. At this time, the white light has two peaks.

According to an embodiment of the present invention, a part of the light emitted from the first emission layer (1st EML) and the second emission layer (2nd EML) is emitted through the cathode, but the rest of the light is emitted to the cathode And then travels toward the reflective layer and is reflected again by the reflective layer. If the distance between the reflective layer and the cathode is equal to an integer multiple of a half wavelength (? / 2) of light emitted from the first and second emission layers (EML) The interference is generated and the light is amplified. If the reflection process is repeated, the degree of amplification of the light is continuously increased, so that the external extraction efficiency of light can be improved. This effect is called the microcavity effect.

In order to obtain the microcavity effect, the distance between the reflective layer and the cathode, that is, the thickness of the anode, the thickness of the first stack (first stack), the charge generation layer (CGL) It is preferable to set the sum of the thicknesses of the organic layers composed of the second stack and the second stack to be an integral multiple of the half wavelength (? / 2) of the light emitted from the first EML and the second EML.

At this time, according to an embodiment of the present invention, the first emission layer (1st EML) is formed in a first stack and the second emission layer (2nd EML) is formed in a second stack (Λ / 2) of the light emitted from the first light emitting layer (1st EML) and an integer multiple of the half wavelength (λ / 2) of the light emitted from the second light emitting layer (2nd EML) It is not easy to set the distance between the reflective layer and the cathode to satisfy all the conditions.

Therefore, according to an embodiment of the present invention, the distance between the reflective layer and the cathode is set differently for each pixel. At this time, the thickness of the organic layer, for example, the thickness of the individual layers in the first stack (first stack), the thickness of the charge generation layer (CGL), and the thickness of the individual layers in the second stack If they are set differently, the manufacturing process is complicated and productivity is reduced. Thus, according to an embodiment of the present invention, the thickness of the individual layers in the first stack, the thickness of the charge generation layer (CGL), and the thickness of the individual layers in the second stack (2nd Stack) The distance between the reflective layer and the cathode is set differently for each pixel by setting the thicknesses to be the same for each pixel and setting the thickness T of the anode to be different for each pixel.

Specifically, when the distance between the reflective layer and the cathode is set to be one time the half wavelength (? / 2) of blue light in the case of a blue (B) pixel, The thickness T of the anode can not be set such that the thickness T becomes negative and thus becomes one time the half wavelength (? / 2) of blue light. Therefore, in the case of a blue (B) pixel, it is preferable to set the thickness T of the anode so as to be twice or three times the half wavelength (? / 2) of blue light.

The thickness T of the anode can be set to be twice or three times the half wavelength (? / 2) of the green light similarly to the blue (B) pixel in the case of the green (G) In this case, the difference between the thickness T of the anode of the green (G) pixel and the thickness T of the anode of the blue (B) pixel becomes too large. Therefore, in consideration of the thickness T of the anode of the blue (B) pixel, in the case of the green (G) pixel, an anode (anode) Is set to be the thickness (T)

It is preferable to set the thickness T of the anode to be 1 or 2 times the half wavelength (? / 2) of red light similarly to the green (G) pixel in the case of a red (R) pixel.

Therefore, according to the embodiment of the present invention, when the thickness T of the anode is set to be twice the half wavelength (? / 2) of blue light in the blue (B) The thickness T of the anode is set so as to be one half of the half wavelength of green light lambda / 2 and the thickness T of the anode is set to be one times the half wavelength lambda / 2 of the red light R pixel, Is set as the thickness (T). In this case, the thickness T of the anode provided in the blue (B) pixel corresponds to the thickness T of the anode provided in the green (G) pixel and the thickness T of the red The thickness T of the anode provided in the red pixel is set to be larger than the thickness T of the anode provided in the green pixel. Is formed thicker than the thickness T of the anode. Specifically, the thickness of the anode of the blue (B) pixel is formed in the range of 700 to 1000 angstroms, the thickness of the anode of the red (R) pixel is formed in the range of 450 to 800 angstroms, The thickness T1 of the anode of the pixel may be in the range of 50 to 400 ANGSTROM. The distance between the reflective layer and the cathode may be set to be twice the half wavelength (? / 2) of the blue light in the blue (B) pixel when the thickness of the anode is set to such a thickness range. And the distance between the reflective layer and the cathode is set to be one half of the half wavelength (? / 2) of green and red light in the green (G) and red (R) pixels, respectively.

According to another embodiment of the present invention, when the thickness T of the anode is set to be three times the half wavelength (? / 2) of blue light in the blue (B) The thickness T of the anode is set so as to be twice the half wavelength λ / 2 of the green light and the thickness T of the anode is set to be twice the half wavelength λ / 2 of the red light, Is set as the thickness (T). In this case, the thickness T of the anode provided in the red (R) pixel corresponds to the thickness T of the anode provided in the green (G) pixel and the thickness T of the anode provided in the pixel of blue And the thickness T of the anode provided in the pixel of the blue color B is larger than the thickness T of the anode provided in the pixel of the green color G, Is formed thicker than the thickness (T). Specifically, the thickness of the anode of the blue (B) pixel is in the range of 1850 to 2150, the thickness of the anode of the red (R) pixel is formed in the range of 2100 to 2500, The thickness T1 of the anode of the pixel may be formed in the range of 1500 to 1800 ANGSTROM. The distance between the reflective layer and the cathode may be set to be three times the half wavelength (? / 2) of the blue light in the blue (B) pixel, And the distance between the reflective layer and the cathode is set to be twice the half wavelength (? / 2) of green and red light in the green (G) and red (R) pixels, respectively.

FIG. 3 is a graph showing changes in the intensity of light emitted by the wavelength band when the thickness T of the anode is varied in the structure of FIG.

In FIG. 3, the thickness T of the anode is set to 850 ANGSTROM in the organic light emitting device of FIG. 2, and the thickness of the anode in the organic light emitting device of FIG. T is set to 250 ANGSTROM. In Example 3, the thickness T of the anode is set to 640 ANGSTROM in the organic light emitting device shown in FIG. 2. In Comparative Example 1, (Cathode) is formed as a transparent electrode so as not to obtain a microcavity effect.

In Examples 1 to 3 and Comparative Example 1, the thickness of the individual layers in the first stack, the thickness of the charge generating layer (CGL), and the thickness of the individual layers in the second stack All are the same.

As can be seen from FIG. 3, it can be seen that the case of Example 1 in which the thickness (T) of the anode is the thickest exhibits the highest luminescence intensity in the short wavelength band. Therefore, it can be seen that the thickness of the anode (B) is preferably larger than that of the green (G) pixel and the red (R) pixel in the case of the blue (B) .

It can also be seen that the case of Example 2 in which the thickness T of the anode is the thinnest shows the highest luminescence intensity in the middle-wave band. Therefore, it is preferable that the thickness (T) of the anode (anode) is thinner in the case of the green (G) pixel that emits the medium wavelength band than the case of the blue (B) pixel and the red have.

In addition, it can be seen that the case of Example 3 in which the thickness T of the anode is intermediate shows the highest luminescence intensity in the long wavelength band. Accordingly, in the case of a red (R) pixel that emits a long wavelength band, the thickness T of the anode is made thinner than that of the blue (B) pixel, It is preferable that the thickness (T)

As a result, in the case where the thickness T of the anode is formed within the range of 700 to 1000 angstroms so as to double the half wavelength (? / 2) of blue light in the blue (B) The thickness T of the anode is set to be within a range of 450 to 800 ANGSTROM so that the half wavelength of the light becomes one half of the half wavelength of the light (? / 2) It is preferable that the thickness T of the anode is in the range of 50 to 400 ANGSTROM.

Table 1 below shows the luminous efficiency and the color coordinate values of each organic light emitting device according to Examples 1 to 3 and Comparative Example 1 of FIG.

R pixel G pixel B pixel cd / A CIEx CIEy cd / A CIEx CIEy cd / A CIEx CIEy Comparative Example 1 5.1 0.668 0.328 22.0 0.283 0.671 1.7 0.143 0.053 Example 1 4.8 0.689 0.306 1.4 0.305 0.567 1.6 0.144 0.036 Example 2 1.8 0.661 0.338 43.2 0.271 0.705 0.5 0.163 0.476 Example 3 12.1 0.674 0.324 6.8 0.382 0.605 0.6 0.161 0.025

As can be seen from Table 1, in Example 1 in which the thickness (T) of the anode is the thickest, the luminous efficiency is excellent in the blue (B) pixel as compared with the red (R) pixel and the green And the color coordinates are optimized in the blue (B) pixel as compared with the red (R) pixel and the green (G) pixel, and the width of the emission spectrum is narrowed, thereby improving the color purity. Therefore, it can be understood that the case of Embodiment 1 in which the thickness T of the anode is the thickest is suitable for the blue (B) pixel.

In the case of Example 2 in which the thickness T of the anode is the thinnest, it can be seen that the luminous efficiency is excellent in the green (G) pixel as compared with the red (R) pixel and the blue (B) pixel, The color coordinates are optimized in the green (G) pixel as compared with the red (R) and blue (B) pixels, and the color purity is improved by narrowing the width of the emission spectrum. Therefore, it can be understood that the second embodiment in which the thickness T of the anode is the thinnest is suitable for the green (G) pixel.

In the case of Example 3 in which the thickness T of the anode is intermediate, it can be seen that the luminous efficiency is excellent in the red (R) pixel as compared with the green (G) pixel and the blue (B) pixel, The color coordinates are optimized in the red (R) pixel as compared with the red (G) and blue (B) pixels, and the color purity is improved by narrowing the width of the emission spectrum. Therefore, it can be seen that the embodiment 3 in which the thickness T of the anode is intermediate is suitable for the red (R) pixel.

4A is a schematic cross-sectional view of an organic light emitting device having red (R), green (G), and blue (B) pixels according to an embodiment of the present invention.

4A, the organic light emitting diode includes red (R) pixels, green (G) pixels, and blue (B) Each of the pixels G and B includes a reflective layer, an anode, a first stack, a charge generation layer CGL, a second stack (second stack), a cathode, A capping layer (CPL), and a color filter layer CF are formed.

The reflective layer provided in each of the red (R), green (G), and blue (B) pixels is the same as the reflective layer of FIG. 2 described above. In addition, the thicknesses of the reflectors provided in the red (R), green (G), and blue (B) pixels are the same.

The anode provided in each of the red (R) pixel, the green (G) pixel and the blue (B) pixel is the same as the anode of FIG. 2 described above. The thickness T2 of the anode of the red (R) pixel, the thickness T1 of the anode of the green (G) pixel, and the thickness T2 of the anode of the blue (B) (T3) are different from each other. Specifically, the thickness T2 of the anode of the red (R) pixel is greater than the thickness T1 of the anode of the green (G) pixel and the thickness T2 of the anode of the blue (B) Thinner than the thickness (T3). The thickness T1 of the anode of the green (G) pixel may be greater than the thickness T2 of the anode of the red (R) pixel and the thickness T2 of the anode of the blue (B) T3). The thickness T3 of the anode of the blue (B) pixel is less than the thickness T2 of the anode of the red (R) pixel and the thickness T2 of the anode of the green (G) T1.

More specifically, the thickness T2 of the anode of the red (R) pixel is formed in the range of 450 to 800 angstroms so as to satisfy the condition that the half wavelength (? / 2) of the red light is one time, The thickness T1 of the anode of the green (G) pixel is formed in the range of 50 to 400 ANGSTROM to satisfy the condition that it is one time the half wavelength (lambda / 2) of the green light, The thickness T3 of the anode of the blue light source may be set in the range of 700 to 1000 angstroms so as to satisfy the condition that the half wavelength (? / 2) of the blue light is doubled.

The first stack provided in each of the red (R), green (G), and blue (B) pixels is the same as the first stack of FIG. 2 described above. The first hole transport layer (HIL), the first hole transport layer (1st HTL), the first hole transport layer (HTL), and the second hole transport layer (HTL) in the first stack provided in each of the red (R), green The thicknesses of the light emitting layer (1st EML) and the first electron transporting layer (1st ETL) are the same.

The charge generation layer (CGL) provided in each of the red (R), green (G) and blue (B) pixels is the same as the charge generation layer (CGL) of FIG. The thicknesses of the charge generation layers (CGL) provided in the red (R), green (G), and blue (B) pixels are the same.

The second stack included in each of the red (R), green (G), and blue (B) pixels is the same as the second stack of FIG. 2 described above. In addition, a second HTL, a second EML, and a second EML in a second stack provided in each of the red (R), green (G), and blue (B) 2 ETL and the EIL are equal to each other.

The cathode provided in each of the red (R) pixel, the green (G) pixel and the blue (B) pixel is the same as the cathode in FIG. 2 described above. The thicknesses of the cathodes provided for the red (R), green (G), and blue (B) pixels are the same.

A capping layer (CPL) provided in each of the red (R), green (G), and blue (B) pixels is formed on the cathode of each pixel to enhance the light extraction effect. The capping layer CPL may be formed of an organic material having a hole transporting capability or may be made of a host material constituting the first emitting layer (1st EML) or the second emitting layer (2nd emitting layer), but the present invention is not limited thereto . However, the capping layer (CPL) may be omitted.

A color filter layer CF provided in each of the red (R), green (G) and blue (B) pixels is formed on the capping layer (CPL) of each pixel. The red (R) pixel includes red (R) color filter layer (CF) to convert white light (W) emitted from the bottom into red and emits green light (G) The blue (B) pixel includes a color filter layer (CF) of blue (B), and the blue (B) And converts the white light (W) emitted from the light source into blue light.

FIG. 4B is a schematic cross-sectional view of an organic light emitting device having red (R), green (G), and blue (B) pixels according to another embodiment of the present invention. The organic light emitting device according to FIG. 4B is the same as the organic light emitting device according to FIG. 4A except that the thickness of the anode is changed. Therefore, only different configurations will be described below.

4B, the thickness T2 of the anode of the red (R) pixel is smaller than the thickness T1 of the anode of the green (G) pixel and the thickness T1 of the anode of the blue (B) The thickness T3 of the anode of the blue (B) pixel is formed to be thicker than the thickness T3 of the anode of the green (G) pixel.

More specifically, the thickness T2 of the anode of the red (R) pixel is formed in a range of 2100 to 2500 ANGSTROM to satisfy a condition of doubling the half wavelength (? / 2) of red light, The thickness T1 of the anode of the green (G) pixel is formed in the range of 1500 to 1800 ANGSTROM to satisfy the condition that the half-wavelength? / 2 of the green light is doubled, May be formed in the range of 1850 to 2150 angstroms so as to satisfy the condition that the thickness T3 of the anode of the blue light is three times the half wavelength (lambda / 2) of the blue light.

5 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention, which shows only one pixel.

5, the organic light emitting device according to another embodiment of the present invention includes a reflective layer, an anode, a first stack, a charge generation layer (CGL), a second stack (second stack) ), And a cathode (cathode).

The organic light emitting device according to FIG. 5 is the same as the organic light emitting device according to FIG. 2 except that a third emitting layer (3rd EML) is additionally provided in the second stack (2nd stack). Therefore, the same reference numerals are assigned to the same components, and only the different components will be described below.

5, a third emission layer (3rd EML) emitting red (R) light is disposed between a second HTL and a second EML emitting yellow light (YG) .

For example, the third emission layer (3rd EML) may include an organic material that emits light having a peak wavelength in a range of 600 nm to 650 nm. Specifically, a phosphorescent dopant of a red color may be added to a host material comprising a carbazole- May be doped.

According to another embodiment of the present invention, since the third emission layer (3rd EML) for emitting red (R) light is additionally provided, the emission efficiency of red (R) can be improved.

In the organic light emitting device according to another embodiment of the present invention, light of blue (B) emitted from the first stack (Stack) and light of blue (B) emitted from the second stack Light and red (R) light are mixed to emit white light. At this time, the white light has three peaks.

5, the thicknesses of the individual layers in the first stack (first stack), the thicknesses of the charge generation layers CGL (first layer) and the second layer And the thicknesses of the individual layers in the second stack are set to be equal to each other and the thickness T of the anode is set to be different for each pixel instead of the thicknesses of the individual layers in the second stack, Reflector) and the cathode are set to be different from each other.

Specifically, when the thickness T of the anode is set to be twice the half wavelength (? / 2) of blue light in the blue (B) pixel, the half wavelength (? / 2) The thickness T of the anode is set such that the thickness T of the anode is set to be one times the half wavelength of red light and the thickness T of the anode is set to be one times the half wavelength of red light do. In this case, the thickness T of the anode provided in the blue (B) pixel corresponds to the thickness T of the anode provided in the green (G) pixel and the thickness T of the red The thickness T of the anode provided in the red pixel is set to be larger than the thickness T of the anode provided in the green pixel. Is formed thicker than the thickness T of the anode. Specifically, the thickness of the anode of the blue (B) pixel is formed in the range of 700 to 1000 angstroms, the thickness of the anode of the red (R) pixel is formed in the range of 450 to 800 angstroms, The thickness T1 of the anode of the pixel may be in the range of 50 to 400 ANGSTROM.

When the thickness T of the anode is set to be three times the half wavelength (? / 2) of blue light in the blue (B) pixel, the half wavelength (? / 2 The thickness T of the anode is set such that the thickness T of the anode is set to be twice the half wavelength of red light and twice the half wavelength λ / 2 of red light in the red color pixel . In this case, the thickness T of the anode provided in the red (R) pixel corresponds to the thickness T of the anode provided in the green (G) pixel and the thickness T of the anode provided in the pixel of blue And the thickness T of the anode provided in the pixel of the blue color B is larger than the thickness T of the anode provided in the pixel of the green color G, Is formed thicker than the thickness (T). Specifically, the thickness of the anode of the blue (B) pixel is in the range of 1850 to 2150, the thickness of the anode of the red (R) pixel is formed in the range of 2100 to 2500, The thickness T1 of the anode of the pixel may be formed in the range of 1500 to 1800 ANGSTROM.

FIG. 6 is a graph showing the change in the intensity of light emitted by the wavelength band when the thickness T of the anode is varied in the structure of FIG. 5. FIG.

6, the thickness T of the anode is set to 850 ANGSTROM in the organic light emitting device of FIG. 5, the thickness of the anode in the organic light emitting device of FIG. T is set to 250 ANGSTROM. In Example 6, the thickness T of the anode in the organic light emitting device according to FIG. 5 is set to 640 ANGSTROM. In Comparative Example 2, (Cathode) is formed as a transparent electrode so as not to obtain a microcavity effect.

In Examples 4 to 6 and Comparative Example 2, the thicknesses of the individual layers in the first stack, the thickness of the charge generation layer (CGL), and the thickness of the individual layers in the second stack All are the same.

As can be seen from FIG. 6, the case of Example 4 in which the thickness (T) of the anode is the thickest shows the highest light emission intensity in the short wavelength band. Therefore, it can be seen that the thickness of the anode (B) is preferably larger than that of the green (G) pixel and the red (R) pixel in the case of the blue (B) .

In addition, it can be seen that the case of Example 5 in which the thickness (T) of the anode is the thinnest shows the highest luminescence intensity in the middle-wave band. Therefore, it is preferable that the thickness (T) of the anode (anode) is thinner in the case of the green (G) pixel that emits the medium wavelength band than the case of the blue (B) pixel and the red have.

Also, it can be seen that the case of Example 6 in which the thickness (T) of the anode is intermediate is the highest intensity in the long wavelength band. Accordingly, in the case of a red (R) pixel that emits a long wavelength band, the thickness T of the anode is made thinner than that of the blue (B) pixel, It is preferable that the thickness (T)

As a result, in the case where the thickness T of the anode is formed within the range of 700 to 1000 angstroms so as to double the half wavelength (? / 2) of blue light in the blue (B) The thickness T of the anode is set to be within a range of 450 to 800 ANGSTROM so that the half wavelength of the light becomes one half of the half wavelength of the light (? / 2) It is preferable that the thickness T of the anode is in the range of 50 to 400 ANGSTROM.

Table 2 below shows the luminous efficiency and the color coordinate values of each organic light emitting device according to Examples 4 to 6 and Comparative Example 2 of FIG. 6.

R pixel G pixel B pixel cd / A CIEx CIEy cd / A CIEx CIEy cd / A CIEx CIEy Comparative Example 2 4.6 0.673 0.323 17.7 0.276 0.673 1.6 0.141 0.053 Example 4 6.9 0.698 0.299 1.2 0.271 0.559 1.6 0.143 0.040 Example 5 1.9 0.663 0.336 29.3 0.293 0.687 0.3 0.167 0.380 Example 6 15.1 0.684 0.314 3.9 0.372 0.608 0.6 0.159 0.026

As can be seen from Table 2 above, in Example 4 in which the thickness (T) of the anode is the thickest, the luminous efficiency is excellent in the blue (B) pixel as compared with the red (R) pixel and the green And the color coordinates are optimized in the blue (B) pixel as compared with the red (R) pixel and the green (G) pixel, and the width of the emission spectrum is narrowed, thereby improving the color purity. Therefore, it can be understood that the fourth embodiment in which the thickness T of the anode is the thickest is suitable for the blue (B) pixel.

In the case of Example 5 in which the thickness T of the anode is the thinnest, it can be seen that the luminous efficiency is excellent in the green (G) pixel as compared with the red (R) pixel and the blue (B) pixel, The color coordinates are optimized in the green (G) pixel as compared with the red (R) and blue (B) pixels, and the color purity is improved by narrowing the width of the emission spectrum. Therefore, it can be seen that the fifth embodiment in which the thickness T of the anode is the thinnest is suitable for the green (G) pixel.

In the case of Example 6 in which the thickness T of the anode is intermediate, it can be seen that the luminous efficiency is excellent in the red (R) pixel as compared with the green (G) pixel and the blue (B) pixel, The color coordinates are optimized in the red (R) pixel as compared with the red (G) and blue (B) pixels, and the color purity is improved by narrowing the width of the emission spectrum. Therefore, it can be understood that the case of Embodiment 6 in which the thickness T of the anode is intermediate is suitable for the red (R) pixel.

7A is a schematic cross-sectional view of an organic light emitting element having red (R), green (G), and blue (B) pixels according to another embodiment of the present invention.

7A, the organic light emitting diode according to another embodiment of the present invention includes a red (R) pixel, a green (G) pixel, and a blue (B) Each of the (G) and blue (B) pixels includes a reflective layer, an anode, a first stack, a charge generation layer (CGL), a second stack (second stack), a cathode, A capping layer (CPL), and a color filter layer CF are formed.

The reflector provided in each of the red (R) pixel, the green (G) pixel and the blue (B) pixel is the same as the above-described reflector of FIG. In addition, the thicknesses of the reflectors provided in the red (R), green (G), and blue (B) pixels are the same.

The anode provided in each of the red (R), green (G), and blue (B) pixels is the same as the anode in FIG. The thickness T2 of the anode of the red (R) pixel, the thickness T1 of the anode of the green (G) pixel, and the thickness T2 of the anode of the blue (B) (T3) are different from each other. Specifically, the thickness T2 of the anode of the red (R) pixel is greater than the thickness T1 of the anode of the green (G) pixel and the thickness T2 of the anode of the blue (B) Thinner than the thickness (T3). The thickness T1 of the anode of the green (G) pixel may be greater than the thickness T2 of the anode of the red (R) pixel and the thickness T2 of the anode of the blue (B) T3). The thickness T3 of the anode of the blue (B) pixel is less than the thickness T2 of the anode of the red (R) pixel and the thickness T2 of the anode of the green (G) T1.

More specifically, the thickness T2 of the anode of the red (R) pixel is formed in the range of 450 to 800 angstroms so as to satisfy the condition that the half wavelength (? / 2) of the red light is one time, The thickness T1 of the anode of the green (G) pixel is formed in the range of 50 to 400 ANGSTROM to satisfy the condition that it is one time the half wavelength (lambda / 2) of the green light, The thickness T3 of the anode of the blue light source may be set in the range of 700 to 1000 angstroms so as to satisfy the condition that the half wavelength (? / 2) of the blue light is doubled.

The first stack provided in each of the red (R) pixel, the green (G) pixel and the blue (B) is the same as the first stack of FIG. 5 described above. In addition, a hole injection layer (HIL), a first hole transport layer (1st HTL), a first hole transport layer (HTL), and a hole transport layer (HTL) in a first stack provided in each of the red (R), green (1st EML) and the first electron transporting layer (1st ETL) are equal to each other.

The charge generation layer (CGL) provided for each of the red (R), green (G) and blue (B) is the same as the charge generation layer (CGL) of FIG. The thicknesses of the charge generation layers CGL provided for the red (R), green (G), and blue (B) pixels are the same.

The second stack provided in each of the red (R), green (G), and blue (B) is the same as the second stack of FIG. 5 described above. A second HTL, a second ETL, a second ETL, and a second HTL in a second stack provided in each of the red (R), green (G), and blue (B) The thicknesses of the electron transport layer (2nd ETL) and the electron injection layer (EIL) are the same.

The cathode provided in each of the red (R) pixel, the green (G) pixel, and the blue (B) is the same as the cathode in FIG. 5 described above. The thicknesses of the cathodes provided for each of the red (R), green (G), and blue (B) pixels are the same.

The capping layer (CPL) provided on each of the red (R), green (G) and blue (B) is formed on the cathode of each pixel to enhance the light extraction effect. The capping layer CPL may be formed of an organic material having a hole transporting capability or may be made of a host material constituting the first emitting layer (1st EML) or the second emitting layer (2nd emitting layer), but the present invention is not limited thereto . However, the capping layer (CPL) may be omitted.

A color filter layer CF provided in each of the red (R), green (G), and blue (B) is formed on the capping layer (CPL) of each pixel. The red (R) pixel includes red (R) color filter layer (CF) to convert white light (W) emitted from the bottom into red and emits green light (G) The blue (B) pixel includes a color filter layer (CF) of blue (B), and the blue (B) And converts the white light (W) emitted from the light source into blue light.

7B is a schematic cross-sectional view of an organic light emitting device having red (R), green (G), and blue (B) pixels according to another embodiment of the present invention. The organic light emitting device according to FIG. 7B is the same as the organic light emitting device according to FIG. 7A except that the thickness of the anode is changed. Therefore, only different configurations will be described below.

7B, the thickness T2 of the anode of the red (R) pixel is equal to the thickness T1 of the anode of the green (G) pixel and the thickness T1 of the anode of the blue (B) The thickness T3 of the anode of the blue (B) pixel is formed to be thicker than the thickness T3 of the anode of the green (G) pixel.

More specifically, the thickness T2 of the anode of the red (R) pixel is formed in a range of 2100 to 2500 ANGSTROM to satisfy a condition of doubling the half wavelength (? / 2) of red light, The thickness T1 of the anode of the green (G) pixel is formed in the range of 1,500 to 1,800 ANGSTROM to satisfy the condition that the half-wavelength? / 2 of the green light is doubled, May be formed in the range of 1850 to 2150 angstroms so as to satisfy the condition that the thickness T3 of the anode of the blue light is three times the half wavelength (lambda / 2) of the blue light.

FIG. 8A is a graph showing the variation of the emission intensity of the organic light emitting device according to FIG. 7A and the wavelength of the blue (B) pixel of the organic light emitting device according to FIG. 4A. FIG. 8B is a graph showing the relationship between the organic light emitting device according to FIG. FIG. 8C is a graph showing changes in the intensity of light emitted from the organic light emitting device according to the wavelength band of the green (G) pixel of the organic light emitting device, FIG. FIG.

As can be seen from FIG. 8A, in the short wavelength band, the emission intensity at the peak wavelength of the organic light emitting device according to FIG. 7A is similar to the emission intensity at the peak wavelength of the organic light emitting device according to FIG. 4A. Therefore, it can be seen that the luminous efficiency of blue (B) does not differ greatly between the organic light emitting device according to FIG. 7A and the organic light emitting device according to FIG. 4A.

As can be seen from FIG. 8B, in the medium-wavelength band, the emission intensity at the peak wavelength of the organic light-emitting device according to FIG. 7A is smaller than the emission intensity at the peak wavelength of the organic light-emitting device according to FIG. Therefore, it can be seen that the organic light emitting device according to FIG. 7A has a lower green light emitting efficiency than the organic light emitting device according to FIG. 4A.

As can be seen from FIG. 8C, in the long wavelength band, the emission intensity at the peak wavelength of the organic light emitting device according to FIG. 7A is greater than the emission intensity at the peak wavelength of the organic light emitting device according to FIG. Therefore, it can be seen that the organic light emitting device according to FIG. 7A is superior in red (R) emission efficiency to the organic light emitting device according to FIG. 4A.

As described above, the second stack (2nd Stack) is provided with a second light emitting layer (2nd EML) that emits yellow green (YG) light and a third light emitting layer (3rd EML) that emits red light, 7A having a peak is provided with a second emission layer (2nd EML) for emitting yellow green (YG) light in a second stack (2nd stack) The luminous efficiency of green (G) is lower than that of the device, but the luminous efficiency of red (R) is improved.

Table 3 below shows the luminous efficiency and the color coordinate values of the OLED according to FIG. 7A having three emission peaks and the OLED according to FIG. 4A having two emission peaks.

R pixel G pixel B pixel cd / A CIEx CIEy cd / A CIEx CIEy cd / A CIEx CIEy 4A 12.1 0.674 0.324 43.2 0.271 0.705 1.6 0.144 0.036 7A 15.1 0.684 0.314 29.3 0.293 0.687 1.6 0.143 0.040

FIG. 9 is a graph showing the change in the intensity of light emitted by a blue (B) pixel according to the variation of the thickness T of the anode.

FIG. 9 is a graph showing the relationship between the thickness of the anode of the blue (B) pixel and the thickness of the anode of the blue (B) pixel in the structure according to FIG. 4A, It shows the change of the emission intensity by wavelength.

That is, FIG. 9 shows the case of FIG. 4A in which the thickness of the anode satisfying the condition of doubling the half wavelength (? / 2) of blue (B) / 2) in the case of FIG. 4B in which the thickness of the anode satisfying the condition that the thickness of the anode is 3,000 times the thickness of the anode is set to 2000 ANGSTROM.

As can be seen from FIG. 9, the full width at half maximum (FWHM) of the peak wavelength is narrowed in the case of FIG. 4B as compared with the case of FIG. 4A. That is, when the thickness of the anode is increased by a multiple of the half wavelength (? / 2) of the blue (B) light, the half width FWHM of the peak wavelength is narrowed, .

Table 4 below shows the luminous efficiency between the case of Fig. 4A in which the thickness of the anode is set to 850 ANGSTROM and the case of Fig. 4B where the thickness of the anode is set to 2000 ANGLE while changing the blue dopant in the blue (B) It shows.

Blue dopant Condition Luminous efficiency
Pyrene system 4A (850 ANGSTROM) 78% 4B (2000 Å) 62%
Chrysene 4A (850 ANGSTROM) 81% 4B (2000 Å) 67%

As can be seen from the above Table 4, it can be seen that when the thickness of the anode increases by a multiple of the half wavelength (? / 2) of the blue (B) light, the luminous efficiency decreases.

In addition, it can be seen that the luminous efficiency differs depending on the blue dopant. Specifically, it can be seen that the use of a chrysene-based blue dopant can improve the luminous efficiency compared with the use of a blue-based blue dopant.

10 is a graph showing the change in luminescence intensity by wavelength band depending on the type of the blue dopant.

As can be seen from FIG. 10, the half width (FWHM) of the peak wavelength of the chrysene blue dopant is narrower than that of the blue dopant of the pyrene type.

9 and 10, when the thickness of the anode is increased by a multiple of the half wavelength? / 2 of blue light, the half width FWHM of the peak wavelength is narrowed and the luminous efficiency is reduced At this time, it can be seen that the use of a dopant having a narrow half width (FWHM) of the peak wavelength like the chrysene blue dopant can reduce the emission efficiency.

11 is a schematic cross-sectional view of an OLED display according to an embodiment of the present invention.

11, the OLED display according to an exemplary embodiment of the present invention includes a substrate 10, a thin film transistor layer 20, a planarization layer 30, a reflector, an anode, A cathode 50, an organic layer 60, and a cathode.

The substrate 10 may be made of glass, or a transparent plastic, such as polyimide, which is capable of bending or rolling, but is not limited thereto.

The thin film transistor layer 20 is formed on the substrate 10. The thin film transistor layer 20 includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a source electrode 24a, a drain electrode 24b, and a protective film 25.

The gate electrode 21 is patterned on the substrate 10 and the gate insulating film 22 is formed on the gate electrode 21 and the semiconductor layer 23 is formed on the gate insulating film 22 The source electrode 24a and the drain electrode 24b are patterned so as to face each other on the semiconductor layer 23 and the protective film 25 is patterned on the source electrode 24a and the source electrode 24a, And is formed on the drain electrode 24b.

Although the bottom gate structure in which the gate electrode 21 is formed under the semiconductor layer 23 is shown in the figure, the top gate structure in which the gate electrode 21 is formed on the semiconductor layer 23 .

The planarization layer 30 is formed on the thin film transistor layer 20 to planarize the substrate surface. The planarization layer 30 may be formed of an organic insulating film such as photo-acryl, but is not limited thereto.

The reflective layer is patterned on the planarization layer 30 for each of red (R), green (G), and blue (B) pixels. The reflective layer is connected to the drain electrode 24b or the source electrode 24a of the thin film transistor layer 20 through a contact hole formed in the protective layer 25 and the planarization layer 30. [

The anode is formed on the reflective layer. The anode is also patterned for each of the red (R), green (G), and blue (B) pixels. The thicknesses (T1, T2, and T3) of the anode are different for each of the pixels (R, G, and B) and are the same as described above.

The bank layer 50 is formed on the anode and the planarization layer 30 to define a pixel region R, The bank layer 50 is formed in a matrix structure in a boundary region between a plurality of pixels R, G and B so that the region of pixels R, G and B is defined by the bank layer 50.

The organic layer 60 is formed on the anode. The organic layer 60 may also be formed on the bank layer 50. That is, the organic layer 60 may not be separated for each of the pixels R, G, and B, but may be connected to adjacent pixels.

The organic layer 60 may have a stack structure of a first stack, a charge generation layer (CGL), and a second stack (stack) of the organic light emitting device according to various embodiments described above. Accordingly, white light may be emitted from the organic layer 60.

The cathode is formed on the organic layer 60.

The stacked structure of the reflective layer, the anode, the organic layer 60, and the cathode may be an organic light emitting device according to various embodiments described above.

Although not shown, the individual pixels R, G, and B may further include a color filter for filtering the white light emitted from the organic layer 60 by wavelength. The color filter is formed on the movement path of light. Therefore, the color filter may be formed on the cathode.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of the same should be interpreted as being included in the scope of the present invention

10: substrate 20: thin film transistor layer
30: planarization layer 50: bank layer
60: Organic layer

Claims (15)

A first pixel, a second pixel, and a third pixel,
Wherein each of the first pixel, the second pixel and the third pixel includes an anode, an organic layer provided on the anode, and a cathode provided on the organic layer,
Wherein the thickness of the anode of the first pixel, the thickness of the anode of the second pixel, and the thickness of the anode of the third pixel are different from each other. The method according to claim 1,
Wherein the thickness of the organic layer of the first pixel, the thickness of the organic layer of the second pixel, and the thickness of the organic layer of the third pixel are equal to each other. The method according to claim 1,
Wherein the first pixel comprises a green pixel, the second pixel comprises a red pixel, the third pixel comprises a blue pixel,
Wherein the thickness of the anode provided in the blue pixel is thicker than the thickness of the anode provided in the green pixel and the thickness of the anode provided in the red pixel. The method of claim 3,
Wherein a thickness of the anode provided in the red pixel is thicker than a thickness of the anode provided in the green pixel. 5. The method of claim 4,
The sum of the thickness of the anode of the green pixel and the thickness of the organic layer satisfies a condition that the sum of the half wavelength of the green light is 1 time,
The sum of the thicknesses of the anode and the organic layer of the red pixel satisfies a condition that the sum of the half wavelength of the red light is 1 time,
Wherein a sum of an anode of the blue pixel and a thickness of the organic layer is twice the half wavelength of blue light. 5. The method of claim 4,
Wherein the thickness of the anode provided in the green pixel ranges from 50 to 400 angstroms, the thickness of the anode included in the red pixel ranges from 450 to 800 angstroms, and the thickness of the anode included in the blue pixel ranges from 700 to 1000 angstroms. . The method according to claim 1,
Wherein the first pixel comprises a green pixel, the second pixel comprises a red pixel, the third pixel comprises a blue pixel,
Wherein the thickness of the anode provided in the red pixel is thicker than the thickness of the anode provided in the green pixel and the thickness of the anode provided in the blue pixel. 8. The method of claim 7,
Wherein a thickness of the anode of the blue pixel is greater than a thickness of the anode of the green pixel. 9. The method of claim 8,
The sum of the thickness of the anode of the green pixel and the thickness of the organic layer is twice the half wavelength of the green light,
The sum of the thickness of the anode of the red pixel and the thickness of the organic layer satisfies the condition that the sum is twice the half wavelength of red light,
Wherein the sum of the thickness of the anode of the blue pixel and the thickness of the organic layer is three times the half wavelength of the blue light. 9. The method of claim 8,
Wherein the thickness of the anode provided in the green pixel ranges from 1500 to 1800 angstroms, the thickness of the anode included in the red pixel ranges from 2100 to 2500 angstroms, and the thickness of the anode included in the blue pixel ranges from 1850 to 2150 angstroms. . The method according to claim 1,
The organic layer includes a first stack including a blue light emitting layer, a second stack including a yellow green light emitting layer, and a charge generating layer provided between the first stack and the second stack. The method according to claim 1,
The organic layer includes a first stack including a blue light emitting layer, a second stack including a yellow green light emitting layer and a red light emitting layer, and a charge generating layer provided between the first stack and the second stack. 13. The method according to claim 11 or 12,
Wherein the blue light emitting layer comprises a chrysene blue dopant. The method according to claim 1,
Wherein each of the first pixel, the second pixel, and the third pixel further comprises a reflective layer disposed below the anode, the cathode being made of translucent electrode, and the color filter layer being further provided on the cathode, . Board;
A thin film transistor layer provided on the substrate; And
And an organic light emitting element provided on the thin film transistor layer,
Wherein the organic light emitting device comprises the organic light emitting device according to any one of claims 1 to 14.

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