KR20180000903A - Gas Module for Atomic Layer Deposition Apparatus, Atomic Layer Deposition Apparatus, Deposition Method using the same - Google Patents

Abstract

An atomic layer deposition equipment gas module is provided. The atomic layer deposition apparatus gas module according to an embodiment of the present invention includes a first gas module provided with a source gas supply part for supplying a source gas toward a substrate and a first purge gas supply part for providing a purge gas toward the substrate, A second gas module positioned in a transport direction of the substrate with respect to the first gas module and having a reaction gas supply part for supplying a reaction gas toward the substrate and a second purge gas supply part for supplying a purge gas toward the substrate, .

Description

TECHNICAL FIELD [0001] The present invention relates to a gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the gas module, an atomic layer deposition apparatus,

The present invention relates to an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the atomic layer deposition apparatus. More particularly, the present invention relates to a first gas module for supplying a source gas and a purge gas, An atomic layer deposition apparatus including an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the atomic layer deposition apparatus.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate includes physical vapor deposition (PVD) using physical collision such as sputtering, And chemical vapor deposition (CVD).

In recent years, as the design rule of a semiconductor device has become finer, a thin film of a fine pattern is required, and a step of a region where a thin film is formed is greatly increased, so that a fine pattern of atomic layer thickness can be formed very uniformly In addition, the use of atomic layer deposition (ALD), which has excellent step coverage, is increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gaseous molecules are injected into a process chamber at the same time and the resulting reaction product is deposited on the substrate, the atomic layer deposition method injects a gas containing one source material into the process chamber, There is a difference in that a product by chemical reaction between the source material on the substrate surface is deposited by adsorbing on the substrate and then injecting a gas containing another source material into the process chamber.

However, the conventional atomic layer deposition method has a problem in that the deposition rate is low due to problems such as downtime in which the apparatus does not operate due to loading / unloading, heating / cooling, and the like. Accordingly, the present inventor invented an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the atomic layer deposition apparatus, which provide a high deposition rate.

Korean Patent Publication No. 10-2014-0067786

It is an object of the present invention to provide an atomic layer deposition gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the atomic layer deposition apparatus.

It is another object of the present invention to provide an atomic layer deposition apparatus gas module, an atomic layer deposition apparatus, and an atomic layer deposition method using the atomic layer deposition apparatus capable of miniaturizing equipment (reduction of foot print).

The technical problem to be solved by the present invention is not limited by the above-mentioned problems.

The atomic layer deposition equipment gas module according to an embodiment of the present invention includes a first gas module provided with a source gas supply part for supplying a source gas toward a substrate and a first purge gas supply part for supplying a purge gas toward the substrate, A second gas module disposed in the substrate transfer direction with respect to the first gas module and having a reaction gas supply part for supplying a reaction gas toward the substrate and a second purge gas supply part for supplying a purge gas toward the substrate, . ≪ / RTI >

According to an embodiment, the source gas supply unit and the first purge gas supply unit of the first gas module may have a plurality of units, and the source gas supply unit and the first purge gas supply unit may be alternately arranged.

According to an embodiment, the reaction gas supply unit and the second purge gas supply unit of the second gas module may have a plurality of units, and the reactive gas supply unit and the second purge gas supply unit may be alternately arranged.

According to one embodiment, the first gas module and the second gas module may be spaced apart from each other in the transport direction of the substrate.

According to an embodiment, an exhaust port for exhausting the source gas or the reaction gas may be disposed between the first gas module and the second gas module.

An atomic layer deposition apparatus according to an embodiment of the present invention includes a first gas module provided with a source gas supply part and a first purge gas supply part alternately arranged to provide a gas toward a substrate to be transported in a first direction, And a second gas module provided in the first direction from the gas module, the reaction gas supply part and the second purge gas supply part being alternately arranged, wherein in the gas module and the second direction different from the first direction, And a controller for providing relative movement between the substrate and the substrate and for providing gas to the substrate through the gas module.

According to one embodiment, the first direction and the second direction may be orthogonal to each other.

According to one embodiment, the apparatus further comprises a transported stage on which the substrate is mounted, and the control unit can move the stage in a fixed state of the gas module to provide the relative movement.

According to one embodiment, the control unit may provide relative movement between the gas module and the substrate in units of the width of the first gas module or the second gas module.

According to one embodiment, the control unit may provide the relative movement while the substrate is continuously transported in the first direction.

According to one embodiment, the substrate is flexible and may further comprise rollers for winding and transporting one end of the substrate.

According to one embodiment, the roller transports the substrate in a third direction that is opposite to the first direction, and the gas module includes a substrate deposition surface in the first direction and a substrate deposition in the third direction As shown in FIG.

A method of depositing an atomic layer according to an embodiment of the present invention includes a first step of providing a source gas and a purge gas through a first gas module traveling in a different direction with respect to a transfer direction of the substrate, And a second step of supplying a reactive gas and a purge gas through a second gas module traveling in a different direction with respect to the transport direction of the substrate.

A method of depositing an atomic layer according to another embodiment of the present invention includes a first step of providing a source gas and a purge gas through a first gas module while a substrate is running in a width direction of the substrate, And a second step of supplying the reactive gas and the purge gas through the second gas module while the substrate is moving in the width direction of the substrate.

According to the atomic layer deposition method according to the embodiments of the present invention, the substrate can be transported in the transport direction after the completion of the first step.

According to the atomic layer deposition method according to the embodiments of the present invention, the substrate can be transported in the transport direction during the first step.

An atomic layer deposition apparatus according to an embodiment of the present invention includes a first gas module provided with a source gas supply part and a first purge gas supply part alternately arranged to provide a gas toward a substrate to be transported in a first direction, And a second gas module provided in the first direction from the gas module, the reaction gas supply part and the second purge gas supply part being alternately arranged, wherein in the gas module and the second direction different from the first direction, And a controller for providing relative movement between the substrate and the substrate and for providing gas to the substrate through the gas module.

According to one embodiment of the present invention, a first gas module provides a source gas and a purge gas, and a second gas module provides a reactive gas and a purge gas, toward a substrate being transported in a first direction. Thus, since the atomic layer deposition region is increased, the deposition rate can be improved, and the time for supplying the source gas and the reaction gas can be increased, so that a high-quality thin film can be formed.

According to an embodiment of the present invention, since relative movement between the gas module and the substrate is provided, since the first gas module and the second gas module are each composed of two kinds of gas supply parts, the relative movement of the gas module and the substrate It is possible to reduce the size of the space that is required in providing.

Effects according to the embodiment of the present invention are not limited by the effects described above.

1 is a perspective view illustrating an atomic layer deposition apparatus gas module according to an embodiment of the present invention.
2 is a cross-sectional view illustrating an atomic layer deposition equipment gas module according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating an atomic layer deposition through an atomic layer deposition apparatus gas module according to an embodiment of the present invention. Sectional view.
FIG. 4 is a schematic view illustrating an atomic layer deposition through an atomic layer deposition apparatus gas module according to an embodiment of the present invention. Sectional view.
FIG. 5 is a schematic view illustrating an atomic layer deposition through an atomic layer deposition apparatus gas module according to another embodiment of the present invention. Sectional view.
6 is a view for explaining a roll-to-roll process of an atomic layer deposition equipment gas module according to an embodiment of the present invention.
7 is another view for explaining a roll-to-roll process application of an atomic layer deposition apparatus gas module according to an embodiment of the present invention.
8 is a flowchart illustrating an atomic layer deposition method according to an embodiment of the present invention.
9 is a flowchart illustrating an atomic layer deposition method according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the shapes and thicknesses of regions are exaggerated for an effective description of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a perspective view illustrating an atomic layer deposition apparatus gas module according to an embodiment of the present invention. 2 is a cross-sectional view illustrating an atomic layer deposition equipment gas module according to an embodiment of the present invention. More specifically, Fig. 2 (a) is a cross-sectional view taken along the line a-a in Fig. Fig. 2 (b) is a cross-sectional view taken along the line b-b in Fig. FIG.

The atomic layer deposition equipment gas module according to an embodiment of the present invention can form various thin film layers. For example, at least one thin film layer of a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer can be formed. According to one embodiment, the source gas for forming the metal thin film layer is one of TMA (Tri Methyl Aluminum), TEA (Tri Ethyl Aluminum) and DMACl (Di Methyl Aluminum Chloride) Gas. ≪ / RTI > At this time, the purge gas may be any one of argon (Ar), nitrogen (N2), and helium (He), or a mixture of two or more gases. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane (SiH4), disilane (Si2H6) and silicon tetrafluoride (SiF4) containing ricons, May be one of an oxygen gas and an ozone gas. At this time, the purge gas may be any one of argon (Ar), nitrogen (N2), and helium (He), or a mixture of two or more gases. At this time, the source gas, the purge gas, and the reaction gas are not limited to these, and may be changed according to the needs of those skilled in the art.

Referring to FIG. 1, an atomic layer deposition apparatus gas module 100 according to an embodiment of the present invention includes a first gas module 110 for providing a source gas and a purge gas toward a substrate S, And a second gas module 120 for supplying a reactive gas and a purge gas toward the first gas module 120.

Referring to FIGS. 1 and 2A, the first gas module 110 includes a source gas supply unit 112 and a first purge gas supply unit (not shown) for injecting a source gas and a purge gas toward the substrate S 114). The first gas module 110 may simultaneously provide a source gas and a purge gas toward the substrate S through the source gas supply unit 112 and the first purge gas supply unit 114. [

The source gas supply unit 112 and the first purge gas supply unit 114 may be a plurality of. In this case, the source gas supply unit 112 may include first and second sub-source gas supply units 112a and 112b, and the first purge gas supply unit 114 may include first, second, and third And sub purge gas supply units 114a, 114b, and 114c.

At this time, the first and second sub-source gas supply units 112a and 112b and the first, second and third sub purge gas supply units 114a, 114b, and 114c alternate with each other in the width direction of the substrate S . Thus, the first sub-purge gas supply section 114a, the first sub-source gas supply section 112a, the second sub-purge gas supply section 114b, the second sub-source gas supply section 112b, 114c.

According to an embodiment, the widths of the first and second sub-source gas supply portions 112a and 112b and the first, second and third sub purge gas supply portions 114a, 114b, and 114c may be equal to each other.

The first gas module 110 may provide a source gas or a purge gas to a corresponding region of the substrate S. [ More specifically, as shown in Fig. 2 (a), the substrate S can be partitioned into imaginary divided areas A1, A2, A3, A4, and A5. At this time, A1 of the substrate S corresponds to the first sub-purge gas supply portion 114a of the first gas module 110, A2 corresponds to the first sub-source gas supply portion 112a, The first sub-purge gas supply unit 114b corresponds to the second sub-purge gas supply unit 114b, the fourth sub-purge gas supply unit 114b corresponds to the second sub-source gas supply unit 112b, and the A5 corresponds to the third sub- purge gas supply unit 114c.

Accordingly, the first sub-purge gas supply unit 114a can supply purge gas to the area A1 of the substrate S, and the first sub-source gas supply unit 112a can supply the purge gas to the area A2 of the substrate S, The second sub-purge gas supply 114b may provide purge gas to the A3 region and the second sub-source gas supply 112b may provide source gas to the A4 region And the third sub purge gas supply 114c may provide purge gas to the A5 region.

The width of the first gas module 110 may be the same as the width of the substrate S. That is, the width of the first gas module 110 may be equal to the width of the substrate S and L. Alternatively, the width of the first gas module 110 may be wider than the width of the substrate S. Hereinafter, for convenience of explanation, it is assumed that the width of the first gas module 110 and the width of the substrate S are the same.

According to one embodiment, relative movement between the first gas module 110 and the substrate S may be provided. For example, the first gas module 110 may be operated in a direction different from the transport direction T of the substrate S. More specifically, the first gas module 110 can be reciprocated in the direction M1 perpendicular to the transport direction T of the substrate S. The operation of the first gas module 110 relative to the substrate S will be described later in detail.

Referring to FIGS. 1 and 2B, the second gas module 120 includes a reaction gas supply unit 122 and a second purge gas supply unit (not shown) for injecting a reactive gas and a purge gas toward the substrate S 124 < / RTI > The second gas module 120 may simultaneously provide a reactive gas and a purge gas toward the substrate S through the reactive gas supply unit 122 and the second purge gas supply unit 124.

The reaction gas supply unit 122 and the second purge gas supply unit 124 may be plural. In this case, the reaction gas supply unit 122 may include first and second sub reaction gas supply units 122a and 122b, and the second purge gas supply unit 124 may include first, second, and third And sub purge gas supply units 124a, 124b, and 124c.

The first and second sub reaction gas supply units 122a and 122b and the first, second and third sub purge gas supply units 124a, 124b and 124c are alternately arranged in the width direction of the substrate S, . Accordingly, the first sub-purge gas supply unit 112a, the first sub-reaction gas supply unit 122a, the second sub-purge gas supply unit 124b, the second sub-reaction gas supply unit 122b, 124c.

According to an embodiment, the widths of the first and second sub-reaction gas supply units 122a and 122b and the first, second and third sub purge gas supply units 124a, 124b and 124c may be equal to each other.

The second gas module 120 may provide a reactive gas or a purge gas to a corresponding region of the substrate S. More specifically, as shown in FIG. 2 (b), the substrate S may be partitioned into imaginary divided areas A1, A2, A3, A4, and A5. At this time, A1 of the substrate S corresponds to the first sub-purge gas supply part 124a of the second gas module 120, A2 corresponds to the first sub-reaction gas supply part 122a, Corresponds to the second sub purge gas supply part 124b and A4 corresponds to the second sub reaction gas supply part 122b and A5 corresponds to the third sub purge gas supply part 124c.

Accordingly, the first sub-purge gas supply unit 124a can supply purge gas to the area A1 of the substrate S, and the first sub-reaction gas supply unit 122a can supply the purge gas to the area A2 of the substrate S, The second sub-purge gas supply unit 124b may provide a purge gas to the area A3, and the second sub-reaction gas supply unit 122b may supply the reactive gas to the area A4 And the third sub purge gas supply 124c may provide a purge gas in the A5 region.

The width of the second gas module 120 may be the same as the width of the substrate S. That is, the width of the second gas module 120 may be equal to the width of the substrate S and L. Alternatively, the width of the second gas module 120 may be wider than the width of the substrate S. Hereinafter, it is assumed that the width of the second gas module 120 is equal to the width of the substrate S for convenience of explanation.

According to one embodiment, the second gas module 120 can be operated relative to the substrate S. For example, the second gas module 120 may be operated in a direction different from the transport direction T of the substrate S. More specifically, the second gas module 120 can be reciprocated in the M2 direction perpendicular to the transport direction T of the substrate S. The operation of the second gas module 120 relative to the substrate S will be described later in detail.

The substrate S can be transported in the transport direction T of the substrate shown in Fig. In this case, the substrate S enters under the first gas module 110 and passes under the second gas module 120 by an additional transfer. More specifically, as the substrate S is transported in the transport direction T, the region S5 is initially located below the first gas module 110 and the source gas and the second gas Purge gas can be provided. Thereafter, as the substrate S is further transported in the transport direction T, the S3 region is positioned below the first gas module 110, and the source gas and the purge gas Can be provided. At the same time, the S5 region is positioned below the second gas module 120, and the reactive gas and the purge gas can be supplied from the second gas module 120.

According to one embodiment, the substrate S may be transported in the transport direction T, in the lengthwise direction of the first gas module or the second gas module (the direction in the transport direction of the substrate). In this case, the substrate S may be transferred in the longitudinal direction of the gas module after receiving the corresponding gas under the first gas module and / or the second gas module. Alternatively, the substrate S may be continuously transported in the transport direction T. In this case, the substrate S can be continuously transported in the transport direction T even when the corresponding gas is supplied under the first gas module and / or the second gas module.

According to one embodiment, an exhaust port 130 may be provided between the first gas module 110 and the second gas module 120. In other words, a distance may be provided between the first gas module 110 and the second gas module 120 in the transport direction of the substrate, and the exhaust hole 130 may be provided at the separation distance . The exhaust port 130 may prevent the source gas and the reactive gas from being mixed. For this purpose, the exhaust port 130 may exhaust the source gas toward the second gas module 120 among the source gas injected from the first gas module 110. Also, the exhaust port 130 may exhaust a reaction gas toward the first gas module 110 out of the reaction gas injected from the second gas module 120.

According to an embodiment, the lengths of the first gas module 110, the second gas module 120, and the exhaust port 130 may be equal to each other.

1 and 2, an atomic layer deposition apparatus gas module according to an embodiment of the present invention has been described.

The atomic layer deposition apparatus according to an embodiment of the present invention may further include a control unit for controlling each configuration of the atomic layer deposition apparatus gas module, a chamber for providing an atomic layer deposition reaction space, And a chamber pump for controlling the pressure in the chamber.

More specifically, the control unit may control the gas module 100 to supply a gas such as a source gas, a purge gas, and a reactive gas to the substrate S. The controller 100 may control the atomic layer deposition and the transfer of the substrate S through the operation of the substrate S and / or the gas module 100, which will be described later.

According to one embodiment of the present invention, for atomic layer deposition, relative movement between the substrate and the gas module is provided in a direction different from the transport direction of the substrate, which will be described below with reference to FIGS. 3 to 5. The atomic layer deposition through the example atomic layer deposition equipment will be described.

FIG. 3 is a cross-sectional view illustrating an atomic layer deposition through an atomic layer deposition apparatus gas module according to an embodiment of the present invention. Sectional view.

Referring to FIG. 3 (a), the control unit may inject the source gas and the purge gas while the substrate S is positioned under the first gas module 110. For example, the control unit may supply source gas through the source gas supply units 112a and 112b of the first gas module 110 and may supply purge gas through the first purge gas supply units 114a, 114b, and 114c can do. Thereby, the substrate (S) can be provided with a source gas and a purge gas. At this time, the substrate S may be provided with a source gas or a purge gas for each of the divided regions of the substrate S. Thereby, the A1, A3 and A5 partitions of the substrate S are provided with the purge gas, and the A2 and A4 partitions can be provided with the source gas.

The controller may move the first gas module 110 in the M1-1 direction after the gas supply is performed in the positional relationship between the first gas module 110 and the substrate S shown in FIG. To perform gas supply.

Referring to FIG. 3 (b), the controller may transfer the first gas module 110 to the substrate S in the direction M1-1. For example, the control unit may transport the first gas module 110 by a width of the unit gas supply unit of the first gas module 110 in the direction of M1-1. More specifically, the control unit may feed the first gas module 110 in the direction of M1-1 by the width of the first sub purge gas supply unit 114a. Accordingly, the control unit can generate a relative movement between the substrate S and the first gas module 110.

The controller may control the first gas module 110 to provide a source gas and a purge gas in a state in which the first gas module 110 is transferred. For example, the control unit may supply purge gas through the second and third sub purge gas supply units 114b and 114c, and may supply the source gas through the first and second source gas supply units 112a and 112b. . Thereby, the A2 and A4 partitions of the substrate S are provided with the purge gas, and the A1 and A3 partitions can be provided with the source gas. Thus, the A2 and A4 divided regions of the substrate S are supplied with the source gas in Fig. 3 (a) and the purge gas is provided in Fig. 3 (b), so that the source gas byproduct can be removed.

The control unit moves the first gas module 110 in the direction of M1-2 after the gas supply is performed in the positional relationship between the first gas module 110 and the substrate S shown in FIG. To perform gas supply.

Referring to FIG. 3 (c), the controller may transfer the first gas module 110 to the substrate S in the M1-2 direction. For example, the control unit may transport the first gas module 110 by a width of the unit gas supply unit of the first gas module 110 in the M1-2 direction. More specifically, the control unit may transport the first gas module 110 in the direction of M1-2 by the width of the first sub purge gas supply unit 114a. Accordingly, the control unit can generate a relative movement between the substrate S and the first gas module 110.

The controller may control the first gas module 110 to provide a source gas and a purge gas in a state in which the first gas module 110 is transferred. Thus, as described with reference to Fig. 3 (a), the A1, A3 and A5 divided areas of the substrate S are provided with purge gas, and the A2 and A4 divided areas can be provided with the source gas. Thus, the Al and A3 divided regions of the substrate S are provided with the source gas in Fig. 3 (b) and the purge gas is provided in Fig. 3 (c), so that the source gas byproduct can be removed.

The control unit moves the first gas module 110 in the direction of M1-2 after the gas supply is performed in the positional relationship between the first gas module 110 and the substrate S shown in FIG. To perform gas supply.

Referring to FIG. 3 (d), the controller may transport the first gas module 110 to the substrate S in the M1-2 direction. For example, the control unit may transport the first gas module 110 by a width of the unit gas supply unit of the first gas module 110 in the M1-2 direction. More specifically, the control unit may transport the first gas module 110 in the direction of M1-2 by the width of the first sub purge gas supply unit 114a. Accordingly, the control unit can generate a relative movement between the substrate S and the first gas module 110.

The controller may control the first gas module 110 to provide a source gas and a purge gas in a state in which the first gas module 110 is transferred. Thereby, the A2 and A4 divided regions of the substrate (S) are provided with the purge gas, and the A3 and A5 divided regions can be provided with the source gas. Thus, the A2 and A4 divided regions of the substrate S are provided with the source gas in Fig. 3 (c) and are provided with the purge gas in Fig. 3 (d), so that the source gas byproduct can be removed.

According to one embodiment, the divided regions A1 and A5 at both ends of the substrate may have an opportunity to receive the source gas and purge gas less than A2 to A4 of the substrate, The first gas module 110 can be controlled to supply a large amount of source gas and purge gas.

As described above, according to the embodiment described with reference to FIG. 3, source gas and purge gas may be alternately provided for each of the divided regions of the substrate S. Accordingly, the atomic layer deposition apparatus according to an embodiment of the present invention can reduce the foot print while providing high throughput.

The substrate S on which the source gas is formed on the surface through the first gas module 110 may be provided with a reactive gas and a purge gas. Hereinafter, a method in which the reactive gas and the purge gas are supplied to the substrate S will be described with reference to FIG.

FIG. 4 is a cross-sectional view illustrating the atomic layer deposition through the atomic layer deposition apparatus gas module according to an embodiment of the present invention. Sectional view.

Referring to FIG. 4A, the controller may inject reactive gas and purge gas while the substrate S is positioned under the second gas module 120. For example, the control unit may supply the reaction gas through the reaction gas supply units 122a and 122b of the second gas module 120 and may supply the purge gas through the second purge gas supply units 124a, 124b, and 124c can do. Thereby, the substrate S can be supplied with the reactive gas and the purge gas. At this time, the substrate S may be supplied with a reactive gas or a purge gas for each of the divided regions of the substrate S. Thereby, the A1, A3 and A5 divided areas of the substrate S are provided with the purge gas, and the A2 and A4 divided areas can be provided with the reactive gas.

The control unit moves the second gas module 120 in the M2-1 direction after the gas supply is performed in the positional relationship between the second gas module 120 and the substrate S shown in FIG. To perform gas supply.

4 (b), the control unit controls the second gas module 120 in the M2-1 direction with respect to the substrate S, for example, a unit gas supply unit of the second gas module 120, Can be fed by the width of the first sub purge gas supply portion 124a. Accordingly, the controller can generate a relative movement between the substrate S and the second gas module 120.

The controller may control the second gas module 120 to provide a reactive gas and a purge gas while the second gas module 120 is being transferred. For example, the control unit provides purge gas through the second and third sub purge gas supply units 124b and 124c, and supplies the purge gas through the first and second reaction gas supply units 122a and 122b . Thereby, the A2 and A4 divided regions of the substrate (S) are provided with the purge gas, and the A1 and A3 divided regions can be provided with the reactive gas. Accordingly, the A2 and A4 divided regions of the substrate S are provided with the reactive gas in Fig. 4 (a) and provided with the purge gas in Fig. 4 (b), so that the atomic layer can be formed, Can be removed.

The control unit moves the second gas module 120 in the M2-2 direction after the gas supply is performed in the positional relationship between the second gas module 120 and the substrate S shown in FIG. To perform gas supply.

Referring to FIG. 4 (c), the controller may transfer the second gas module 120 to the substrate S in the M2-2 direction. Accordingly, the controller can generate a relative movement between the substrate S and the second gas module 120.

The controller may control the second gas module 120 to provide a reactive gas and a purge gas while the second gas module 120 is being transferred. Thus, as described with reference to Fig. 4 (a), the A1, A3 and A5 divided areas of the substrate S are provided with the purge gas, and the A2 and A4 divided areas can be provided with the reactive gas. Accordingly, the divided regions A1 and A3 of the substrate S are provided with a reactive gas in FIG. 4 (b) and provided with a purge gas in FIG. 4 (c), so that an atomic layer is formed, .

The controller may move the second gas module 120 in the M2-2 direction after the gas supply is performed in the positional relationship between the second gas module 120 and the substrate S shown in FIG. To perform gas supply.

Referring to FIG. 4 (d), the controller may transfer the second gas module 120 to the substrate S in the M2-2 direction. The control unit may transport the second gas module 120 by a width of the first sub purge gas supply unit 124a in the M2-2 direction. Accordingly, the controller can generate a relative movement between the substrate S and the second gas module 120.

The controller may control the second gas module 120 to provide a reactive gas and a purge gas while the second gas module 120 is being transferred. Thereby, the A2 and A4 divided regions of the substrate (S) are provided with the purge gas, and the A3 and A5 divided regions can be supplied with the reactive gas. Accordingly, the A2 and A4 divided regions of the substrate S are supplied with the reactive gas in FIG. 4 (c) and are provided with the purge gas in FIG. 4 (d), so that the atomic layer is formed and the by- .

According to one embodiment, the divided regions A1 and A5 at both ends of the substrate may have an opportunity to receive the reactive gas and purge gas less than A2 to A4 of the substrate, The second gas module 120 can be controlled to supply a large amount of source gas and purge gas.

According to the embodiment described with reference to FIG. 4, the reactive gas and the purge gas may be alternately provided for each of the divided regions of the substrate S. As a result, the atomic layer can be formed on the substrate S with a high deposition rate.

As described above, in the embodiment described with reference to FIGS. 3 and 4, the case where the gas module moves relative to the substrate and the atomic layer is deposited has been described. Hereinafter, an embodiment will be described in which a substrate is moved relative to a gas module to deposit an atomic layer.

FIG. 5 is a cross-sectional view illustrating an atomic layer deposition through an atomic layer deposition apparatus gas module according to another embodiment of the present invention. Sectional view.

3 (a), the control unit controls the flow of the source gas and the purge gas in a state where the substrate S is positioned under the first gas module 110. In this case, As shown in FIG. Thereby, the A1, A3 and A5 partitions of the substrate S are provided with the purge gas, and the A2 and A4 partitions can be provided with the source gas.

The controller moves the substrate S in the M3-1 direction after the gas supply is performed in the positional relationship between the first gas module 110 and the substrate S shown in FIG. Supply can be performed. In the embodiment described with reference to FIGS. 3 and 4, the first gas module moves, whereas the present embodiment differs from the first embodiment in that the substrate moves.

Referring to FIG. 5 (b), the controller may transfer the substrate S to the first gas module 110 in the M3-1 direction orthogonal to the transfer direction of the substrate. More specifically, the control unit may transport the substrate S by a width of the first sub purge gas supply unit 114a in the M3-1 direction. Accordingly, the control unit can generate a relative movement between the substrate S and the first gas module 110.

The control unit may control the first gas module 110 to provide a source gas and a purge gas in a state in which the substrate S is transferred. Thereby, the A2 and A4 partitions of the substrate S are provided with the purge gas, and the A3 and A5 partitions can be provided with the source gas. Thus, the A2 and A4 divided regions of the substrate S are supplied with the source gas in Fig. 5 (a) and the purge gas is provided in Fig. 5 (b), so that the source gas byproduct can be removed.

The control unit moves the substrate S in the M3-2 direction after the gas supply is performed in the positional relationship between the first gas module 110 and the substrate S shown in FIG. Supply can be performed.

Referring to FIG. 5 (c), the controller may transfer the substrate S to the first gas module 110 in the M3-2 direction. Accordingly, the control unit can generate a relative movement between the substrate S and the first gas module 110.

The controller may control the first gas module 110 to provide a source gas and a purge gas in a state in which the first gas module 110 is transferred. Thereby, as described with reference to Fig. 5 (a), the A1, A3 and A5 divided areas of the substrate S are provided with the purge gas, and the A2 and A4 divided areas can be provided with the source gas. Accordingly, the A3 and A5 divided regions of the substrate S are supplied with the source gas in Fig. 5 (b) and the purge gas is provided in Fig. 5 (c), so that the source gas byproduct can be removed.

The control unit moves the substrate S in the M3-2 direction after the gas supply is performed in the positional relationship between the first gas module 110 and the substrate S shown in FIG. Supply can be performed.

Referring to FIG. 5 (d), the controller may transfer the substrate S to the first gas module 110 in the M3-2 direction. Accordingly, the control unit can generate a relative movement between the substrate S and the first gas module 110.

The control unit may control the first gas module 110 to provide a source gas and a purge gas in a state in which the substrate S is transferred. As a result, the A2 and A4 divided regions of the substrate (S) are provided with the purge gas, and the A1 and A3 divided regions can be provided with the source gas. Accordingly, the A2 and A4 divided regions of the substrate S are supplied with the source gas in Fig. 5 (c) and are provided with the purge gas in Fig. 5 (d), so that the source gas byproduct can be removed.

According to one embodiment, the divided regions A1 and A5 at both ends of the substrate may have an opportunity to receive the source gas and purge gas less than A2 to A4 of the substrate, The first gas module 110 can be controlled to supply a large amount of source gas and purge gas.

As described above, according to the embodiment described with reference to FIG. 5, source gas and purge gas may be alternately provided for each of the divided regions of the substrate S. Accordingly, the atomic layer deposition apparatus according to an embodiment of the present invention can reduce the foot print while providing high throughput.

In the embodiment described with reference to FIG. 3, since the gas module must be moved, the line for supplying the gas to the gas module must be moved as well. On the other hand, according to the present embodiment, Since motion is provided, control convenience can be achieved.

Also, although not shown, by moving the substrate, relative movement can be formed not only with the first gas module but also with the second gas module. That is, since the position of the substrate is controlled, atomic layer deposition is possible for both the first gas module and the second gas module, so that control convenience can be achieved.

6 is a view for explaining a roll-to-roll process of an atomic layer deposition equipment gas module according to an embodiment of the present invention. The embodiment to be described with reference to Fig. 6 differs from the embodiment described with reference to Figs. 1 to 5 in that a roll-to-roll process is applied.

6, an atomic layer deposition apparatus according to an embodiment of the present invention includes an atomic layer deposition equipment gas module 100 according to an embodiment of the present invention and a flexible substrate S And a roller 140 for transferring the toner image. Further, although not shown, it may further include the above-described control unit.

Accordingly, the atomic layer deposition apparatus gas module and atomic layer deposition apparatus according to an embodiment of the present invention can be applied to a roll-to-roll process.

7 is another view for explaining a roll-to-roll process application of an atomic layer deposition apparatus gas module according to an embodiment of the present invention.

7, an atomic layer deposition apparatus according to an embodiment of the present invention includes an atomic layer deposition equipment gas module 100 according to an embodiment of the present invention, and a gas module 100 for winding and transporting one end of the flexible substrate And a roller 140 for rotating the roller. Further, although not shown, it may further include the above-described control unit.

At this time, the roller 140 according to the present embodiment can be configured to transfer the substrate in the first direction and the third direction which is the direction opposite to the first direction.

Also, according to the present embodiment, the gas module 100 may be provided toward the substrate deposition surface transferred in the first direction and the substrate deposition surface transferred in the third direction, respectively.

Accordingly, the atomic layer deposition apparatus gas module and atomic layer deposition apparatus according to an embodiment of the present invention can be applied to various types of roll-to-roll processes.

8 is a flowchart illustrating an atomic layer deposition method according to an embodiment of the present invention. The atomic layer deposition method according to an embodiment of the present invention described with reference to FIG. 8 may be implemented by the atomic layer deposition apparatus gas module and / or atomic layer deposition apparatus described above.

Referring to FIG. 8, a method of depositing an atomic layer according to an embodiment of the present invention includes a first step of providing a source gas and a purge gas through a first gas module traveling in a different direction with respect to a transfer direction of a substrate S100), and a second step (S110) of feeding the reaction gas and the purge gas through a second gas module that transports the substrate in the transport direction and travels in a different direction with respect to the transport direction of the substrate . Hereinafter, each step will be described.

In step S100, the control unit may operate the first gas module 110 in a direction different from the direction in which the substrate S is conveyed. That is, as described with reference to FIG. 1, the controller may operate the first gas module 110 in a direction M1 that is a direction orthogonal to the transport direction T of the substrate.

The control unit may provide the source gas and the purge gas to the substrate S through the first gas module 110 which travels in the M1 direction. 3, the control unit controls the flow of the source gas and the purge gas to the substrate S (the direction of the substrate S) while the first gas module 110 is reciprocally operated in the width direction ).

As a result, the source gas can be deposited on the substrate S at a high deposition rate.

In step S110, the control unit may transfer the substrate on which the source gas is deposited. Referring to FIG. 1, the controller may transfer the substrate S in a transfer direction T. Referring to FIG.

According to an embodiment, the control unit may transport the substrate in the transport direction T after the step S100 is completed, and may transport the substrate in the transport direction T even when the step S100 is being performed can do. For example, as described with reference to FIGS. 6 and 7, in the case of the roll-to-roll process, during the execution of the step S100, the substrate may be transported in the transport direction. In this case, since the transfer of the substrate and atomic layer deposition can be performed at the same time, the deposition rate can be further improved. Hereinafter, for convenience of explanation, it is assumed that the substrate is transferred after the completion of step S100.

When the substrate S is placed in the deposition section of the second gas module 120 and the substrate S is transported, the control section controls the second gas module 120 in a different direction with respect to the transport direction of the substrate S It can be operated. That is, the controller may operate the second gas module 120 in the direction M2 perpendicular to the transport direction T of the substrate, as described with reference to FIG.

The control unit may provide the reaction gas and the purge gas to the substrate S through the second gas module 120 traveling in the M2 direction. 4, when the second gas module 120 is reciprocally moved in the width direction (M2 direction) of the substrate S, the control unit controls the reaction gas and the purge gas on the substrate S ).

As a result, an atomic layer can be deposited on the substrate S at a high deposition rate.

9 is a flowchart illustrating an atomic layer deposition method according to another embodiment of the present invention.

Referring to FIG. 9, the atomic layer deposition method according to another embodiment of the present invention includes a first step of providing a source gas and a purge gas through a first gas module while a substrate is traveling in a width direction of the substrate A second step S210 of transferring the substrate in the transfer direction of the substrate and providing the reaction gas and the purge gas through the second gas module while the substrate is traveling in the width direction of the substrate, . ≪ / RTI >

The embodiment described with reference to FIG. 9 differs from the embodiment described with reference to FIG. 8 in that, for atomic layer deposition, the substrate rather than the gas module provides relative motion.

In step S200, the controller may operate the substrate S in a direction different from the conveying direction of the substrate S with respect to the first gas module 100. [ That is, as described with reference to FIG. 1, the controller can operate the substrate S in the M3 direction orthogonal to the transport direction T of the substrate S.

The control unit controls the substrate S so that the substrate S is reciprocated in the width direction (M3 direction) of the first gas module 110 and the source gas and the purge gas are supplied to the substrate S, As shown in FIG.

As a result, the source gas can be deposited on the substrate S at a high deposition rate.

In step S110, the control unit may transfer the substrate on which the source gas is deposited. Referring to FIG. 1, the controller may transfer the substrate S in a transfer direction T. Referring to FIG.

According to an embodiment, the control unit may transport the substrate in the transport direction T after the step S100 is completed, and may transport the substrate in the transport direction T even when the step S100 is being performed can do. For example, as described with reference to FIGS. 6 and 7, in the case of the roll-to-roll process, during the execution of the step S100, the substrate may be transported in the transport direction. In this case, since the transfer of the substrate and atomic layer deposition can be performed at the same time, the deposition rate can be further improved. Hereinafter, for convenience of explanation, it is assumed that the substrate is transferred after the completion of step S100.

1, when the substrate S is placed in the deposition section of the second gas module 120, the substrate S is transferred to the second gas module 120, (M3) direction perpendicular to the transport direction (T) of the substrate with respect to the substrate (120).

The control unit may provide the substrate S with a reactive gas and a purge gas through the second gas module 120 to the substrate S running in the M3 direction. That is, the control unit may provide the substrate S with the reactive gas and the purge gas by reciprocating the substrate S in the width direction (M2 direction) of the second gas module 120.

As a result, an atomic layer can be deposited on the substrate S at a high deposition rate.

The atomic layer deposition gas module, the atomic layer deposition apparatus, and the atomic layer deposition method according to the embodiments of the present invention described with reference to FIGS. 1 to 9 can produce an atomic layer thin film having a high deposition rate, Such a thin film layer can be applied to at least optical / display devices, semiconductor devices, energy devices, and the like.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

100: gas module
110: first gas module
112a, 112b: sub-source gas supply section
114a, 114b, 114c: the sub purge gas supply part
120: second gas module
122a and 122b: sub-source gas supply section
124a, 124b, and 114c:
S: substrate

Claims (16)

A first gas module provided with a source gas supply part for supplying a source gas toward the substrate and a first purge gas supply part for supplying a purge gas toward the substrate; And
A second gas module disposed in the substrate transfer direction with respect to the first gas module and having a reaction gas supply part for supplying a reaction gas toward the substrate and a second purge gas supply part for supplying a purge gas toward the substrate, An atomic layer deposition equipment gas module. The method according to claim 1,
Wherein the source gas supply unit and the first purge gas supply unit of the first gas module are constituted by a plurality of units,
Wherein the source gas supply and the first purge gas supply are alternately disposed. The method according to claim 1,
The reaction gas supply unit of the second gas module and the second purge gas supply unit are composed of a plurality of,
Wherein the reactive gas supply unit and the second purge gas supply unit are disposed alternately to each other. The method according to claim 1,
Wherein the first gas module and the second gas module are spaced apart from each other in the transport direction of the substrate. 5. The method of claim 4,
And an exhaust port for exhausting the source gas or the reaction gas is disposed between the first gas module and the second gas module. A first gas module provided with a source gas supply part and a first purge gas supply part arranged alternately and a second gas module provided in the first direction from the first gas module, And a second gas module in which a second purge gas supply part is disposed alternately, wherein the gas module; And
And a controller for providing relative movement between the gas module and the substrate in a second direction different from the first direction and providing gas to the substrate through the gas module. The method according to claim 6,
Wherein the first direction and the second direction are orthogonal to each other. The method according to claim 6,
Further comprising a transport stage on which the substrate is seated,
Wherein the control unit transports the stage in a fixed position of the gas module to provide the relative movement. The method according to claim 6,
Wherein the control unit provides relative movement between the gas module and the substrate in units of a width of the first gas module or the second gas module. The method according to claim 6,
Wherein the control unit provides the relative movement while the substrate is continuously transported in the first direction. The method according to claim 6,
The substrate is flexible,
And a roller for winding and transferring one end of the substrate. 12. The method of claim 11,
The roller transports the substrate in a third direction that is opposite to the first direction,
Wherein the gas module is provided facing the substrate deposition surface in the first direction and the substrate deposition surface in the third direction. A first step of providing a source gas and a purge gas through a first gas module traveling in a different direction with respect to the transport direction of the substrate; And
And supplying a reactive gas and a purge gas through a second gas module that transports the substrate in the transport direction and travels in a different direction with respect to the transport direction of the substrate. A first step of providing a source gas and a purge gas through a first gas module while the substrate travels in the width direction of the substrate; And
And a second step of transporting the substrate in a transport direction of the substrate and providing a reactive gas and a purge gas through a second gas module while the substrate is traveling in the width direction of the substrate. Way. The method according to claim 13 or 14,
Wherein the substrate is transported in the transport direction after completion of the first step. The method according to claim 13 or 14,
Wherein the substrate is transported in the transport direction during the first step.

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