KR20160146260A - Light Emitting Diode Package - Google Patents
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- KR20160146260A KR20160146260A KR1020150083280A KR20150083280A KR20160146260A KR 20160146260 A KR20160146260 A KR 20160146260A KR 1020150083280 A KR1020150083280 A KR 1020150083280A KR 20150083280 A KR20150083280 A KR 20150083280A KR 20160146260 A KR20160146260 A KR 20160146260A
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- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 13
- 230000020169 heat generation Effects 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000013464 silicone adhesive Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000005470 impregnation Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000004020 conductor Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L33/505—
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- H01L33/641—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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Abstract
고효율 LED 패키지가 개시된다. 본 발명에 의한 LED 패기지는 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화를 감소를 위하여 형광판(Ceramic Phosphor plate)에 그라핀(Graphene)의 형성을 포함하고, 그라핀(Graphene)에 불순물 도핑을 활용한 패키지를 포함하는 LED 패키지.A high efficiency LED package is disclosed. The LED package according to the present invention includes the formation of a graphene on a ceramic phosphor plate for smooth current diffusion, reduction of heat generation, excellent heat emission, and reduction of a change in refractive index, and the impregnation of graphene An LED package containing a package utilizing doping.
Description
본 발명은, LED 패키지에 관한 것으로, 보다 상세하게는 고성능 백색 LED chip를 구현하는 방법 중 하나인 Blue LED 위에 세라믹 형광판(Ceramic Phosphor plate)을 결합하여 고성능 백색 LED를 구현한다. 본 발명에서는 LED 패키징 과정에서 사용되는 세라믹 형광판(Ceramic Phosphor plate)에 그라핀(Graphene)을 형성하여 원활한 전류 확산, 열 발생 감소, 굴절률 감소 및 원활한 열 배출을 통하여 우수한 특성을 가지는 LED 패키지에 관한 것BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED package, and more particularly, to a high performance white LED by combining a ceramic phosphor plate on a blue LED, which is one of the methods of implementing a high performance white LED chip. The present invention relates to an LED package having excellent characteristics by forming a graphene in a ceramic phosphor plate used in an LED packaging process to smoothly diffuse current, reduce heat generation, reduce refractive index and discharge heat smoothly
일반적으로, LED(Light Emitting Diode)는 갈륨나이트라이드(GaN), 임듐갈륨나이트라이드(InGaN)등의 화합물 반도체에 전류를 흘려 빛을 발산하는 소자이다. In general, a light emitting diode (LED) is a device that emits light by flowing a current to a compound semiconductor such as gallium nitride (GaN) or indium gallium nitride (InGaN).
이러한 LED(Light Emitting Diode)는 상부(p-type GaN)와 하부(n-type GaN)에 만들어진 전도물질에 전류를 통과 시키면 전자와 전공이 공급되고 전도물질 중앙(Multi Quantum well)에서 결합이 이루어져, 전도물질의 특성에 따라 다양한 컬러를 구현할 수 있다.These light emitting diodes (LEDs) are made of conductive materials made of p-type GaN and n-type GaN. When current is passed through them, electrons and electrons are supplied and the electrons are coupled at the center of the conductive material (multi quantum well) , Various colors can be implemented depending on the characteristics of the conductive material.
최근에는, 점차 고출력의 LED 칩이 생산되고, 구동 시 칩에서 발생되는 열이 LED 성능에 큰 영향을 주고 있고 또한 고출력 LED 칩 구현을 위해서는 원활한 류 공급이 및 광추출효율(Extraction Efficiency)을 극대화 시키는 것이 필수적인 기술이다. 현재 광 추출 효율을 증가시키기 위하여 LED chip 제작 시 여러 가지 기술이 보고되고 있다.In recent years, LED chips are increasingly produced with high output power, and heat generated from the chips during driving greatly affects the LED performance. In order to realize a high output LED chip, it is required to supply smooth flow and maximize extraction efficiency It is an essential technology. Various techniques have been reported to fabricate LED chip to increase light extraction efficiency.
그러나 Chip 패키징 과정에서 발생되는 발열문제, 매질의 굴절율 차이에 따른 반사파의 증가로 LED의 특성이 저하되는 문제점이 보고되고 있다.However, it has been reported that the characteristics of the LED are deteriorated due to the heat generated in the chip packaging process and the increase of the reflected wave due to the refractive index difference of the medium.
이와 같이 LED 칩의 원활한 전류공급, 열 발생 감소 및 우수한 열 방출 그리고 굴절률의 차이를 줄이는 것이 이루어지지 않으면 LED소자의 열화현상 및 반사파 증가에 따른 효율의 감소로 이어지는 문제점이 지적되고 있다. As described above, if the LED chip is not provided with a smooth current supply, a reduced heat generation, a good heat dissipation, and a reduction in the difference in refractive index, it is pointed out that deterioration of the LED element and reduction of efficiency due to an increase in reflected wave are pointed out.
본 발명은 상술한 문제점을 해결하기 위해 안출된 것으로, 본 발명의 목적은, 백색 LED 패키징 시 결합되는 세라믹 형광판(Ceramic Phosphor plate)에 그라핀(Graphene)을 형성하여 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절율 변화의 감소를 목적으로 한 LED 패키지 제작에 관한 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a white LED package by forming a graphene on a ceramic phosphor plate, To an LED package for the purpose of reducing heat change and refractive index variation.
이상과 같은 목적을 달성하기 위한 본 발명의 일실시 예에 따른 LED 패키지를 위하여 세라믹 형광판(Ceramic Phosphor plate)을 제작하는 단계; 이후 세라믹 형광판(Ceramic Phosphor plate)에 그라핀(Graphene)을 형성하는 단계; 마지막으로 LED chip위에 실장 하는 단계;가 포함 된 구조에 의하여 달성된다.According to another aspect of the present invention, there is provided a method of manufacturing a LED package, the method comprising: fabricating a ceramic phosphor plate for an LED package according to an embodiment of the present invention; Forming a graphene on a ceramic phosphor plate; And finally mounting on an LED chip.
본 발명의 다양한 실시 예에 따르면, 우수한 열적, 전기적 특성을 가지는 그라핀(Graphene) 형성으로 LED 구동 시 원활한 전류공급, 굴절률 차이 감소 및 열 발생감소 그리고 열 방출 효율을 증가 시켜줌으로서 우수한 LED 패키지 특성을 얻을 수 있다.According to various embodiments of the present invention, the formation of graphene having excellent thermal and electrical characteristics provides smooth current supply, reduction of difference in refractive index, reduction of heat generation, and increase of heat emission efficiency, Can be obtained.
도 1은 본 발명의 일실시 예에 따른 우수한 열 방출 및 굴절률 변화의 감소위한 패키지를 나타낸 도면이다.
도 2는 본 발명의 일실시 예에 따른 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화의 감소를 위한 패키지 도면이다.1 is a view illustrating a package for reducing heat emission and refractive index change according to an exemplary embodiment of the present invention.
FIG. 2 is a package diagram for smooth current diffusion, heat generation reduction, excellent heat emission, and reduction of refractive index change according to an embodiment of the present invention.
이하에서, 첨부된 도면을 참조하여 본 발명의 다양한 실시 예에 대하여 구체적으로 설명한다.Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명의 일실시 예에 따른 우수한 열 방출 및 굴절률 변화를 감소시킨 LED 패키지를 나타낸 도면이다. FIG. 1 is a view illustrating an LED package with reduced heat emission and refractive index change according to an exemplary embodiment of the present invention. Referring to FIG.
도 1에 따르면, 본 발명의 일실시 예에 따른 고 방열 및 굴절률 차이 감소를 위한 LED 패키지(1), 세라믹 형광판(Ceramic Phosphor plate)(10), 그라핀(Graphene)(20), 접착제(Silicone)(30), 전류확산층(Current transparent Layer)(40), p-type GaN Layer(50), 활성층(60), n-type GaN Layer(70)등을 포함하고 있다.1, an LED package 1, a
도 2은 본 발명의 일실시 예에 따른 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화를 감소시킨 LED 패키지를 나타낸 도면이다. FIG. 2 is a view illustrating an LED package with reduced current diffusion, reduced heat generation, excellent heat emission, and reduced refractive index change according to an exemplary embodiment of the present invention.
도 2에 따르면, 본 발명의 일실시 예에 따른 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화의 감소를 위한 LED 패키지(2), 세라믹 형광판(Ceramic Phosphor plate)(10), 그라핀(Graphene)(20), 전류확산층(Current transparent Layer)(40), p-type GaN Layer(50), 활성층(60), n-type GaN Layer(70)등을 포함하고 있다. 2, an LED package 2, a
본 발명의 다양한 실시 예에 따른 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화를 감소시킨 LED 패키지(1),(2)은 GaN기반의 LED소자에서 중요한 역할을 할 수 있다. 특히, 고출력을 요하는 LED 응용분야(일반 조명, 자동차, 가로등, 산업용LED등)에서 LED 패키지(1),(2)을 배치함으로써, 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화를 감 시킨 효과를 얻을 수 있고, 우수한 패키징 특성을 기대할 수 있다.According to various embodiments of the present invention, the LED packages (1) and (2) which have reduced current diffusion, heat generation reduction, excellent heat release and refractive index change can play an important role in GaN-based LED devices. Especially, by arranging the LED packages (1) and (2) in LED application fields (general lighting, automobile, street lamp, industrial LED, etc.) requiring high output power, smooth current diffusion, reduction of heat generation, It is possible to obtain a reduced effect, and excellent packaging characteristics can be expected.
모든 형태 수직형, 수평형 LED chip 및 UV영역에서 적외선 역역까지의 다양한 파장의 LED chip을 포함하여 LED 패키지(1),(2)을 얻는다.The LED packages (1) and (2) are obtained including all types of vertical and horizontal LED chips and LED chips of various wavelengths from the UV region to the infrared region.
LED chip 실장을 위한 형광판(10)은 파우더 혼합공정, 소성공정 및 가공 공정을 이용하여 구현한다.The
원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화를 감소시킨 목적으로 구현되는 그라핀(Graphene)(20)은 코팅(Coating), 증착(Deposition), 성장(Growth)등의 공정으로 얻을 수 있고, 다양한 불순물 도핑을 이용하여 적절한 그라핀(Graphene)의 특성을 얻을 수 있다.Graphene 20, which is implemented for the purpose of smooth current diffusion, reduction of heat generation, and excellent heat dissipation and reduction of refractive index change, can be obtained by processes such as coating, deposition, and growth And it is possible to obtain proper characteristics of Graphene by using various impurity doping.
구현된 형광판을 LED에 실장하여 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 감소를 위한 LED 패키를 얻을 수 있다.The implemented LED can be mounted on LED to obtain LED package for smooth current diffusion, reduction of heat generation, excellent heat emission and reduction of refractive index.
1: LED 패키지(접착제(Silicone)포함 2: LED 패키지(접착제 미포함)
10: 세라믹 형광판 20: 그라핀(Graphene)
30: 실리콘(Silicone) 40: 전류 확산층
50: p-type GaN Layer 60: 활성층
70: n-type GaN Layer1: LED package (including adhesive (Silicone) 2: LED package (without adhesive)
10: Ceramic fluorescent plate 20: Graphene
30: Silicone 40: Current diffusion layer
50: p-type GaN layer 60: active layer
70: n-type GaN layer
Claims (4)
세라믹 형광판(Ceramic Phosphor plate);
상기 형광판은 형광체가 포함 기판;
상기 세라믹 형광판(Ceramic Phosphor plate)에 그라핀(Graphene)을 포함하고 있는 LED 패키지In an LED package,
A ceramic phosphor plate;
The phosphor plate includes a phosphor-containing substrate;
An LED package having a ceramic phosphor plate containing Graphene
LED chip의 원활한 전류확산, 열 발생 감소 및 우수한 열 방출 그리고 굴절률 변화의 감소를 위하여 그라핀(Graphene)에 불순물 도핑을 활용한 LED 패키지.The method of claim 1, wherein
An LED package that utilizes impurity doping in graphene for smooth current diffusion of LED chip, reduction of heat generation, and excellent heat dissipation and reduction of refractive index change.
LED Chip 실장공간;은
LED Chip의 원활한 실장을 위하여 실리콘(Silicone) 접착제등을 사용 및 사용하지 않는 패키지
상기 LED Chip 실장시 실리콘(Silicone) 접착제 사용 시 우수한 열 방출 그리고 굴절률 변화의 감소의 효과를 보는 패키지
상기 LED Chip 실장시 실리콘(Silicone) 접착제 사용하지 않은 경우 전류확산층에 다이렉스 실장으로 인하여 그라핀(Graphene)의 우수한 전기적 특성으로 인하여 원활한 전류확산, 열 발생 감소 등의 효과를 추가적으로 얻을 수 있는 패키지3. The method of claim 2,
LED Chip mounting space;
A package that does not use or use silicone (silicone) adhesive for smooth mounting of LED chip
A package that exhibits excellent heat dissipation and reduced refractive index change when using a silicone adhesive in the LED chip mounting
A package capable of additionally obtaining effects of smooth current diffusion and heat generation due to excellent electrical characteristics of the graphene due to the dielex mounting in the current diffusion layer when the silicon chip adhesive is not used in the LED chip mounting
LED chip은 모든 파장 및 형태의 LED를 포함하며,
상기 LED chip은 전류확산 층이 포함된 것과 포함되지 않은 것을 이용한 LED패키지를 포함The method of claim 3,
The LED chip includes LEDs of all wavelengths and types,
The LED chip includes an LED package including a current diffusion layer and a current diffusion layer.
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| KR1020150083280A KR20160146260A (en) | 2015-06-12 | 2015-06-12 | Light Emitting Diode Package |
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| KR1020150083280A KR20160146260A (en) | 2015-06-12 | 2015-06-12 | Light Emitting Diode Package |
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| KR20160146260A true KR20160146260A (en) | 2016-12-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755411A (en) * | 2019-01-14 | 2019-05-14 | 宁波石墨烯创新中心有限公司 | Packaging film and preparation method thereof, encapsulating structure and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755411A (en) * | 2019-01-14 | 2019-05-14 | 宁波石墨烯创新中心有限公司 | Packaging film and preparation method thereof, encapsulating structure and preparation method thereof |
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