KR20160060192A - Method of manufacturing Organic Light Emitting Device and Organic Light Emitting Display Device - Google Patents

Abstract

The present invention relates to a method for manufacturing an organic light emitting device, which can reduce a moisture content in an organic layer, and a method for manufacturing an organic light emitting display device using the same. The method for manufacturing an organic light emitting device comprises the processes of: laminating an organic layer on a substrate; and removing moisture contained on the surface of the organic layer or inside the organic layer. The removing process of the moisture includes a process of performing vacuum treatment in a vacuum chamber.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing an organic light emitting diode,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting device, and more particularly, to a method of manufacturing an organic light emitting device capable of reducing moisture content in an organic layer.

The organic light emitting device has a structure in which a light emitting layer is formed between a cathode for injecting electrons and an anode for injecting holes and the electrons generated in the cathode and the holes generated in the anode When injected into the light emitting layer, injected electrons and holes are coupled to generate an exciton, and the generated exciton is emitted from the excited state to the ground state.

As described above, the organic light emitting element is widely used for a display device that displays illumination or an image as an element capable of self-emission.

Hereinafter, a conventional organic light emitting device will be described with reference to the drawings.

1 is a schematic cross-sectional view of a conventional organic light emitting device.

1, a conventional organic light emitting device includes a substrate 10, an anode, a hole injection layer (HIL), a hole transporting layer (HTL), an emission layer (EML) ), An electron transporting layer (ETL), an electron injection layer (EIL), and a cathode.

The anode is stacked on the substrate 10 and the hole injection layer HIL is stacked on the anode and the hole transport layer HTL is formed on the hole injection layer HIL. (ETL) is stacked on the light emitting layer (EML), and the electron injection layer (EIL) is stacked on the light emitting layer And the electron transport layer (ETL), and the cathode is stacked on the electron injection layer (EIL).

In the conventional organic light emitting device, a plurality of organic layers including the light emitting layer (EML) are formed between the anode and the cathode, and holes generated in the anode are injected through the hole injection And electrons generated in the cathode are transmitted through the electron injection layer EIL and the electron transport layer ETL through the organic layer comprising the hole transport layer HIL and the hole transport layer HTL, Emitting layer (EML) through an organic layer composed of a light-emitting layer (EML).

However, such conventional organic light emitting devices are easily deteriorated, shortening the lifetime of the device.

Specifically, since a plurality of organic layers formed between the anode and the cathode are easily deteriorated by moisture or oxygen, moisture or oxygen penetrates into the organic layer during the process of forming each organic layer. Process conditions should be managed to avoid

The organic layers may be formed through a deposition process in a vacuum chamber, but may be formed through an ink jet process at atmospheric pressure. In the case of forming the organic layer through the deposition process in the vacuum chamber, the possibility of penetration of moisture or oxygen in the organic layer is relatively small. However, when the organic layer is formed through the inkjet process, There is a high possibility of penetration, and there is a great possibility that the lifetime due to deterioration of the device is shortened.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing an organic light emitting diode capable of reducing moisture content in an organic layer and a method of manufacturing an organic light emitting diode display using the same.

In order to achieve the above object, the present invention provides a method of manufacturing a semiconductor device, comprising: a step of laminating an organic layer on a substrate; And a step of removing water contained in the surface or inside of the organic layer, wherein the step of removing moisture includes a step of performing a vacuum treatment in a vacuum chamber.

The present invention also provides a method of manufacturing a thin film transistor, comprising: forming a thin film transistor on a substrate; Forming a planarization layer on the thin film transistor; Forming a first electrode on the planarization layer; Forming an organic layer on the first electrode; And forming a second electrode on the organic layer, wherein the step of forming the organic layer includes a step of laminating the organic layer, and a step of removing moisture contained in the surface or inside of the organic layer And the step of removing moisture includes a step of performing a vacuum process in a vacuum chamber.

According to an embodiment of the present invention as described above, the step of removing moisture contained in the surface or inside of the organic layer after laminating the organic layer is further performed, thereby minimizing the moisture content in the organic layer and deteriorating the device Problems can be reduced.

1 is a schematic cross-sectional view of a conventional organic light emitting device.
2A to 2G are cross-sectional views illustrating a manufacturing process of an organic light emitting diode according to an exemplary embodiment of the present invention.
3A to 3C are cross-sectional views illustrating a manufacturing process of an OLED display according to an exemplary embodiment of the present invention.
FIG. 4 is a graph showing a normalized quantum efficiency (QE) change according to a temperature change during a vacuum process for removing water from the light emitting layer (EML).
5 is a graph showing a normalized quantum efficiency (QE) change according to a pressure change during a vacuum process for removing water from the light emitting layer (EML).
FIG. 6 is a graph showing a normalized quantum efficiency (QE) change with time in a vacuum treatment process for removing water from the light emitting layer (EML).

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

2A to 2G are cross-sectional views illustrating a manufacturing process of an organic light emitting diode according to an exemplary embodiment of the present invention.

First, as can be seen from FIG. 2A, an anode is formed on the substrate 1.

The anode may be formed of a transparent conductive material having a high conductivity and a high work function, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), SnO 2 or ZnO. Such an anode may be formed through a deposition process known in the art such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

2B, a hole injection layer (HIL) is laminated on the anode, and water or oxygen contained in the surface or inside of the hole injection layer (HIL) Or oxygen 'is referred to as' water').

The hole injecting layer (HIL) may be formed of a material such as MTDATA (4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine), CuPc (copper phthalocyanine) or PEDOT / PSS (3,4-ethylenedioxythiophene, polystyrene sulfonate But it is not necessarily limited thereto.

The hole injection layer (HIL) may be formed by laminating organic materials using an ink jet process and then baking the organic materials.

The inkjet process may be performed in the atmosphere, or may be performed in a chamber of a nitrogen or argon atmosphere. The baking process of the hole injection layer (HIL) may be performed at a temperature of 180 ° C or higher, preferably 200 ° C to 250 ° C for 10 minutes or longer, but is not limited thereto. When the organic material is laminated by the inkjet process, moisture may act as a quencher on the surface of the organic material to lower the light emission characteristic of the device, so that it is particularly preferable to remove moisture acting as a quencher.

The hole injection layer (HIL) may be deposited by a deposition process known in the art such as an evaporation process in a vacuum chamber. In the case of depositing an organic material by a deposition process, a problem of lowering the luminescence property due to moisture is relatively small as compared with the ink jet process. In this case, however, it may be desirable to minimize the degradation of luminescence properties by performing the water removal process.

The process of removing moisture contained in the hole injection layer (HIL) may be performed by the following process.

First, the process of removing moisture contained in the hole injection layer (HIL) may be a vacuum process in a vacuum chamber. The vacuum process is preferably performed at a temperature of less than 30 占 폚 at 5 占 폚, a pressure of 10 ^-3 torr, and a time of 5 minutes to 1 hour.

If the temperature of the vacuum process is less than 5 ° C, the process temperature may be too low to reduce the moisture removal effect. It is preferable to shorten the processing time when the temperature of the step of vacuum processing exceeds 30 캜. If the pressure of the vacuum process is higher than 10 < ^-3 > Torr, the moisture removal effect may be lowered. That is, it is preferable that moisture removal is performed in a high vacuum state. If the time of the vacuum process is less than 5 minutes, the effect of removing water may be lowered. If the time is longer than 1 hour, the increase of moisture removal effect is insignificant but the process time may be increased.

Second, the process of removing moisture contained in the HIL may be a vacuum and a heat treatment process in a vacuum chamber. The vacuum and heat treatment are performed at the same time. Specifically, the vacuum and heat treatment are preferably performed at a temperature of 30 ° C to 70 ° C, a pressure of 10 ^-3 Torr, and a time of 5 minutes to 30 minutes.

If the temperature of the vacuum and heat treatment exceeds 70 캜, pinholes or the like may be formed on the surface of the organic material due to a rapid temperature rise in a vacuum, and the morphology of the organic material surface may be lowered. If the pressure in the process of vacuum and heat treatment is higher than 10 ^-3 torr, the moisture removal effect may be lowered. If the time of the vacuum and heat treatment is less than 5 minutes, the water removal effect may be lowered, and if it exceeds 30 minutes, the morphology of the organic material surface may be lowered.

Third, the process of removing moisture contained in the HIL may be a vacuum process in a vacuum chamber and a subsequent heat treatment at atmospheric pressure.

The vacuum process in the vacuum chamber is carried out at a temperature of less than 30 DEG C at a temperature of 5 DEG C, a pressure of 10 ^-3 Torr or less, and a time of 5 minutes to 1 hour, as in the first method described above desirable.

The heat treatment at the atmospheric pressure after the vacuum treatment is preferably performed at a temperature of 100 ° C to 250 ° C and a time of 10 minutes to 1 hour.

If the temperature of the step of heat-treating at the atmospheric pressure is less than 100 ° C, the moisture may not vaporize and the water-removing effect may not be obtained. If the temperature exceeds 250 ° C, the organic matter may be damaged. If the time of the heat treatment at the atmospheric pressure is less than 10 minutes, the effect of increasing the moisture removal may not be obtained through the heat treatment, and if it exceeds 1 hour, the organic material may be damaged.

In the vacuum treatment process in each of the above-described water removal processes, the structure in which the respective organic substances are stacked is loaded in a chamber of an inert gas atmosphere of 5 ppm or less, preferably 0.5 ppm or less, and then the pressure of 10 ^-3 torr or less And then performing a vacuum process. That is, it is preferable to form the chamber before the vacuum treatment in an inert gas atmosphere of 5 ppm or less, preferably 0.5 ppm or less, in order to prevent further moisture infiltration to the organic layer. The inert gas may be nitrogen gas or argon gas.

As described above, according to an embodiment of the present invention, the step of removing moisture contained in the surface or inside of the hole injection layer (HIL) after laminating the hole injection layer (HIL) is further performed, It is possible to minimize the moisture content on the surface or inside of the injection layer (HIL), thereby preventing the device from deteriorating.

Next, as shown in FIG. 2C, a hole transport layer (HTL) is laminated on the hole injection layer (HIL), and water contained in the surface or inside of the hole transport layer (HTL) is removed.

The HTL may be TPD (N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'- N, N'-diphenyl-benzidine), or NPB (N, N'-di (naphthalen-1-yl) It is not.

The hole transport layer (HTL) may be formed by laminating organic materials using an ink jet process and then baking the organic materials.

The inkjet process may be performed in the atmosphere, or may be performed in a chamber of a nitrogen or argon atmosphere. The baking process of the HTL may be performed at a temperature of 150 ° C or higher, preferably 160 ° C to 200 ° C for at least 40 minutes, but is not limited thereto.

The hole transport layer (HTL) may be deposited by a deposition process known in the art such as an evaporation process in a vacuum chamber.

The step of removing moisture contained in the hole transport layer (HTL) includes a step of performing a vacuum treatment in a first vacuum chamber, as well as a step of removing moisture contained in the above-described hole injection layer (HIL) A heat treatment process, and a vacuum process in a third vacuum chamber, followed by a heat treatment at atmospheric pressure. Since the process conditions of each process are the same, repetitive description thereof will be omitted.

As described above, according to an embodiment of the present invention, a process of removing moisture contained in the surface or inside of the HTL after laminating the HTL is further performed, so that the hole transport layer (HTL) It is possible to minimize the moisture content on the surface or inside of the HTL, thereby preventing the device from deteriorating.

Next, as shown in FIG. 2D, the light emitting layer (EML) is laminated on the hole transport layer (HTL), and moisture contained in the surface or inside of the light emitting layer (EML) is removed.

The light emitting layer (EML) may be a blue light emitting layer, a green light emitting layer, or a red light emitting layer.

The blue light emitting layer may be formed by doping a fluorescent blue dopant into at least one fluorescent host material selected from the group consisting of an anthracene derivative, a pyrene derivative, and a perylene derivative. However, no.

The green light emitting layer may be formed by doping a phosphorescent green dopant to a phosphorescent host material comprising a carbazole compound or a metal complex, but is not limited thereto. The carbazole-based compound may include CBP (4,4-N, N'-dicarbazole-biphenyl), CBP derivative, mCP (N, N'-dicarbazolyl-3,5-benzene) The metal complex may include ZnPBO (phenyloxazole) metal complex or ZnPBT (phenylthiazole) metal complex.

The red light emitting layer may be formed by doping a phosphorescent host material red dopant comprising a carbazole compound or a metal complex, but is not limited thereto. The red dopant may be a metal complex of iridium (Ir) or platinum (Pt), but is not limited thereto.

Optionally, the light emitting layer (EML) may be configured to emit white light by including a blue light emitting layer, a green light emitting layer, and a red light emitting layer. Further, the light emitting layer (EML) may be configured to emit white light by including a blue light emitting layer and an orange light emitting layer.

The light emitting layer (EML) may be formed by laminating an organic material by an inkjet process and then baking the organic material.

The inkjet process may be performed in the atmosphere, or may be performed in a chamber of a nitrogen or argon atmosphere. The baking process of the light emitting layer (EML) may be performed at a temperature of 100 ° C or higher, preferably 120 ° C to 170 ° C for 5 minutes or longer, but is not limited thereto.

The light emitting layer (EML) may be deposited by a deposition process known in the art such as an evaporation process in a vacuum chamber.

The step of removing moisture contained in the light emitting layer (EML) includes a step of performing a vacuum treatment in a first vacuum chamber, a step of performing a vacuum treatment in a first vacuum chamber in the same manner as the step of removing moisture contained in the above-described hole injection layer (HIL) And a third step of vacuum processing in a vacuum chamber, and then a step of heat-treating at atmospheric pressure. Since the process conditions of each process are the same, repetitive description thereof will be omitted.

As described above, according to an embodiment of the present invention, a step of removing water contained in the surface or inside of the light emitting layer (EML) after laminating the light emitting layer (EML) It is possible to minimize the moisture content on the surface or inside and to prevent the degradation of the device.

2E, an electron transport layer (ETL) is laminated on the light emitting layer (EML), and water contained in the surface or inside of the electron transport layer (ETL) is removed.

The electron transport layer (ETL) may be made of an organic material such as oxadiazole, triazole, phenanthroline, benzoxazole or benzthiazole, It is not.

The electron transport layer (ETL) may be formed by a process of laminating an organic material by an inkjet process and then baking the organic material. The inkjet process may be performed in the atmosphere, or may be performed in a chamber of a nitrogen or argon atmosphere.

The electron transport layer (ETL) may be deposited by a deposition process known in the art such as an evaporation process in a vacuum chamber.

The step of removing moisture contained in the electron transport layer (ETL) includes a step of performing a vacuum treatment in a first vacuum chamber, a step of performing a vacuum treatment in a first vacuum chamber in the same manner as the step of removing moisture contained in the above-described hole injection layer (HIL) A heat treatment process, and a vacuum process in a third vacuum chamber, followed by a heat treatment at atmospheric pressure. Since the process conditions of each process are the same, repetitive description thereof will be omitted.

As described above, according to an embodiment of the present invention, a step of removing moisture contained in the surface or inside of the electron transport layer (ETL) after laminating the electron transport layer (ETL) is further performed, It is possible to minimize the moisture content on the surface or inside of the ETL to prevent the device from deteriorating.

2F, an electron injection layer (EIL) is laminated on the electron transport layer (ETL), and water contained in the surface or inside of the electron injection layer (EIL) is removed.

The electron injection layer (EIL) may be formed of lithium fluoride (LiF), lithium quinolate (LiQ), or cesium nitrate (CsNO ₃ ), but is not limited thereto.

The electron injecting layer (EIL) may be formed using an ink jet process, in which an organic material is laminated and then baked. The inkjet process may be performed in the atmosphere, or may be performed in a chamber of a nitrogen or argon atmosphere.

The electron injection layer (EIL) may be deposited by a deposition process known in the art such as an evaporation process in a vacuum chamber.

The step of removing moisture contained in the electron injection layer (EIL) includes a step of performing a vacuum treatment in the first vacuum chamber, a step of removing the moisture contained in the hole injection layer (HIL) And a step of performing a heat treatment process, and a step of performing a vacuum treatment in a third vacuum chamber and then a heat treatment at an atmospheric pressure. Since the process conditions of each process are the same, repetitive description thereof will be omitted.

As described above, according to an embodiment of the present invention, by further performing a step of removing moisture contained in the surface or inside of the electron injection layer (EIL) after the electron injection layer (EIL) is laminated, It is possible to minimize the moisture content on the surface or inside of the injection layer (EIL), thereby preventing the device from deteriorating.

Next, as shown in FIG. 2G, a cathode is formed on the electron injection layer (EIL).

The cathode may be made of a metal having a low work function, for example, aluminum (Al), silver (Ag), magnesium (Mg), lithium (Li), calcium (Ca) It is not. Such a cathode may be formed through a deposition process known in the art such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

The above is the case where the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL) and the electron injection layer (EIL) And the step of removing water contained in each of the above-described steps is performed. However, the present invention is not limited thereto. That is, the present invention provides a moisture removing process for some of the hole injecting layer (HIL), the hole transporting layer (HTL), the light emitting layer (EML), the electron transporting layer (ETL) . As a result, the present invention can remove moisture from at least one of the hole injection layer (HIL), the hole transport layer (HTL), the emission layer (EML), the electron transport layer (ETL) And performing the process.

In the present invention, the hole injection layer (HIL), the hole transport layer (HTL), the emission layer (EML), the electron transport layer (ETL), and the electron injection layer (EIL) And performing one moisture removing step after lamination.

3A to 3C are cross-sectional views illustrating a manufacturing process of an OLED display according to an exemplary embodiment of the present invention.

3A, a thin film transistor 200 is formed on a substrate 100, a planarization layer 300 is formed on the thin film transistor 200, and a planarization layer 300 is formed on the planarization layer 300. In this case, And a bank layer 500 is formed on the first electrode 400. In this case,

The substrate 100 may be made of glass, or a transparent plastic, such as polyimide, which is capable of bending or rolling, but is not limited thereto.

The thin film transistor 200 is formed on each of the red (R), green (G), and blue (B) pixels on the substrate 100. The thin film transistor 200 includes a gate electrode 210, a gate insulating layer 220, a semiconductor layer 230, a source electrode 240a, a drain electrode 240b, and a passivation layer 250.

The gate electrode 210 may be patterned on the substrate 100 by a patterning method such as a photolithography process and the gate insulating layer 220 may be formed on the entire surface of the substrate including the gate electrode 210 The source electrode 240a and the drain electrode 240b may be formed by a deposition method such as a PECVD process and the semiconductor layer 230 may be patterned on the gate insulating layer 220, The protective layer 250 may be formed on the entire surface of the substrate including the source electrode 240a and the drain electrode 240b.

Various methods known in the art can be used to form the individual structures constituting the thin film transistor 200. Although the thin film transistor 200 is a driving thin film transistor, the bottom thin gate transistor 210 has a gate electrode 210 formed below the semiconductor layer 230. However, the gate electrode 210 May be formed on the semiconductor layer 230. In this case,

The planarization layer 300 may be formed on the entire surface of the substrate including the thin film transistor 200. The planarization layer 300 may be formed of an organic insulating film such as photo-acryl, but is not limited thereto.

The first electrode 400 patterns the red (R), green (G), and blue (B) pixels on the planarization layer 300. The first electrode 400 may be connected to the drain electrode 240b of the thin film transistor 200. A contact hole is formed in the passivation layer 250 and the planarization layer 300 so that the drain electrode 240b is exposed through the contact hole and the exposed electrode 240b is exposed to the first electrode 400).

The first electrode 400 may function as an anode. Therefore, the first electrode 400 may be formed of a transparent conductive material having a high conductivity and work function, such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), SnO2 or ZnO And the like. The first electrode 400 may be formed through a deposition process known in the art such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

The bank layer 500 is formed on the first electrode 400 and patterned in a matrix structure to define pixel regions. The bank layer 500 may be patterned through a mask process after depositing an organic insulating material.

Next, as shown in FIG. 3B, an organic layer 600 is formed on the first electrode 400. The organic layer 600 may be patterned in each of red (R), green (G), and blue (B) pixels.

2B, the organic layer 600 is formed by laminating a hole injection layer (HIL) on the first electrode 400 and removing moisture contained in the surface or inside of the hole injection layer (HIL) , A hole transport layer (HTL) is laminated on the hole injection layer (HIL) as shown in FIG. 2C, moisture contained in the surface or inside of the hole transport layer (HTL) is removed, The light emitting layer (EML) is laminated on the hole transport layer (HTL) to remove water contained in the surface or inside of the light emitting layer (EML), and an electron transport layer (ETL) (EIL) is deposited on the electron transport layer (ETL) as shown in FIG. 2F, and the electron injection layer (EIL) is formed on the electron injection layer A step of removing water contained in the surface or inside of the layer (EIL) As shown in FIG.

Each organic material constituting the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL) and the electron injection layer (EIL) G) pixel and a blue (B) pixel, respectively, through an ink jet process or a vapor deposition process, and then a single moisture removing process is performed to form each organic layer. That is, it is not necessary to perform the water removal process for each of the red (R), green (G), and blue (B) pixels with respect to the individual organic layer.

Further, as in the case of the above-described embodiments, the moisture content of some organic layers of the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL) Removal process can be performed. The hole injecting layer (HIL), the hole transporting layer (HTL), the light emitting layer (EML), the electron transporting layer (ETL) and the electron injecting layer (EIL) are sequentially stacked on the first electrode And then one moisture removing step may be performed.

3C, a second electrode 700 is formed on the organic layer 600, and an encapsulation layer 800 is formed on the second electrode 700. Referring to FIG.

The second electrode 700 may be formed on the entire surface of the substrate including the organic layer 600. The second electrode 700 may function as a cathode. The second electrode 700 may be formed of a metal having a low work function such as aluminum (Al), silver (Ag), magnesium (Mg), lithium (Li), calcium (Ca) But the present invention is not limited thereto. The second electrode 700 may be formed through a deposition process known in the art such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

The sealing layer 800 is formed on the second electrode 700. The sealing layer 800 prevents water from penetrating into the organic layer 600. The sealing layer 800 may be formed of a plurality of layers in which inorganic substances different from each other are laminated or a plurality of layers in which inorganic and organic materials are alternately laminated. In addition, the sealing layer 800 may be formed of a metal layer bonded by an adhesive.

FIG. 4 is a graph showing a normalized quantum efficiency (Q.E) change according to a temperature change during a vacuum processing process for removing water from the light emitting layer (EML).

Specifically, FIG. 4 is a graph showing the relationship between the temperature of the red (R) emission layer (EML), the emission range of the green (G) emission layer (EML) , 30 ° C, and 40 ° C) under a pressure of 10 ^-5 torr and a vacuum treatment for 30 minutes, and then normalized quantum efficiency was measured.

As can be seen from FIG. 4, it can be seen that the normalized quantum efficiency is not much smaller than the reference in the case of vacuum treatment at 3 ° C. However, in the case of vacuum treatment at 5 ° C. or higher, it is close to the reference. Therefore, it is preferable that the vacuum treatment for removing moisture is performed at 5 ° C or higher.

Here, as a reference example, when the normalized quantum efficiency is 1.00 because each of the red (R) emission layer (EML), the green (G) emission layer (EML) and the blue (B) emission layer (EML) , And the same is true in the following experimental results.

FIG. 5 is a graph showing a normalized quantum efficiency (Q.E) change due to a pressure change during a vacuum process for removing water from the light emitting layer (EML).

Specifically, Figure 5 is the red (R) emission layer (EML), green (G) emission layer (EML), and blue (B) emission layer (EML) on after exposure to different air pressure (10 ^-2 torr for one another, respectively, 10 < ^-3 > Torr, 10 < ^-5 > Torr) at a temperature of 20 [deg.] C and a vacuum of 30 minutes.

As can be seen from FIG. 5, it can be seen that the normalized quantum efficiency in the case of vacuum treatment at 10 ^-2 torr is not much smaller than that in the reference example. However, in the case of vacuum treatment at 10 ^-3 torr or lower, It can be seen that the efficiency is close to the reference. Therefore, it is preferable that the vacuum treatment for removing water is performed at 10 ^-3 Torr or less.

FIG. 6 is a graph showing a normalized quantum efficiency (Q.E) change with time in a vacuum treatment process for removing water from the light emitting layer (EML).

Specifically, FIG. 6 is a schematic view showing a state in which the red (R) emission layer (EML), the green (G) emission layer (EML) , 10 minutes) at a pressure of 10 < ^-5 > Torr and a temperature of 20 [deg.] C.

As can be seen from FIG. 6, it can be seen that the normalized quantum efficiency is not much smaller than the reference value when the vacuum treatment is performed for 3 minutes. It can be seen that the case of vacuum treatment for 5 minutes or more is close to the reference example. Therefore, it is preferable that the vacuum treatment for removing water is performed for 5 minutes or more.

The organic light emitting display according to an embodiment of the present invention may be applied to a TV or a mobile, a flexible display, or a transparent display known in the art.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of the same should be interpreted as being included in the scope of the present invention

100: substrate 200: thin film transistor
300: planarization layer 400: first electrode
500: bank layer 600: organic layer
700: second electrode 800: sealing layer

Claims (11)

Laminating an organic layer on a substrate;
And a step of removing water contained in the surface or inside of the organic layer,
Wherein the step of removing moisture includes a step of performing a vacuum treatment in a vacuum chamber. The method according to claim 1,
Wherein the vacuum process is performed at a temperature of less than 30 占 폚 at 5 占 폚, a pressure of 10 ^-3 torr, and a time of 5 minutes to 1 hour. The method according to claim 1,
Wherein the vacuum process is performed simultaneously with the heat treatment at a temperature of 30 to 70 DEG C, a pressure of 10 < ^-3 > Torr, and a time of 5 to 30 minutes. The method according to claim 1,
Further comprising a step of performing a heat treatment at atmospheric pressure after the vacuum processing step,
The vacuum process is performed at a temperature of less than 30 占 폚 at 5 占 폚, a pressure of 10 ^-3 torr, and a time of 5 minutes to 1 hour,
Wherein the heat treatment at the atmospheric pressure is performed at a temperature of 100 ° C to 250 ° C and a time of 10 minutes to 1 hour. The method according to claim 1,
Wherein the vacuum chamber is formed in an inert gas atmosphere of 5 ppm or less before the vacuum process. The method according to claim 1,
Further comprising a step of forming an anode on the substrate and a step of forming a cathode,
Wherein the step of laminating the organic layer comprises a step of laminating any one of a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer and an electron injecting layer. Forming a thin film transistor on a substrate;
Forming a planarization layer on the thin film transistor;
Forming a first electrode on the planarization layer;
Forming an organic layer on the first electrode; And
And forming a second electrode on the organic layer,
Wherein the step of forming the organic layer includes a step of laminating the organic layer and a step of removing moisture contained in the surface or inside of the organic layer,
Wherein the step of removing moisture includes a step of performing vacuum processing in a vacuum chamber. 8. The method of claim 7,
Wherein the vacuum process is performed at a temperature of less than 30 占 폚 at 5 占 폚, a pressure of 10 ^-3 torr, and a time of 5 minutes to 1 hour. 8. The method of claim 7,
Wherein the vacuum process is performed simultaneously with the heat treatment at a temperature of 30 ° C to 70 ° C, a pressure of 10 ^-3 Torr, and a time of 5 minutes to 30 minutes. 8. The method of claim 7,
Further comprising a step of performing a heat treatment at atmospheric pressure after the vacuum processing step,
The vacuum process is performed at a temperature of less than 30 占 폚 at 5 占 폚, a pressure of 10 ^-3 torr, and a time of 5 minutes to 1 hour,
Wherein the heat treatment at the atmospheric pressure is performed at a temperature of 100 ° C to 250 ° C and a time of 10 minutes to 1 hour. 8. The method of claim 7,
Wherein the vacuum chamber is formed in an inert gas atmosphere of 5 ppm or less before the vacuum process.

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