KR20160057931A - New negative photoresist composition - Google Patents
New negative photoresist composition Download PDFInfo
- Publication number
- KR20160057931A KR20160057931A KR1020140159171A KR20140159171A KR20160057931A KR 20160057931 A KR20160057931 A KR 20160057931A KR 1020140159171 A KR1020140159171 A KR 1020140159171A KR 20140159171 A KR20140159171 A KR 20140159171A KR 20160057931 A KR20160057931 A KR 20160057931A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- meth
- carbon atoms
- acrylate
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- 239000000203 mixture Substances 0.000 title claims abstract description 49
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 43
- 239000011230 binding agent Substances 0.000 claims abstract description 41
- 239000000178 monomer Substances 0.000 claims abstract description 26
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002904 solvent Substances 0.000 claims abstract description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 52
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 18
- 125000003118 aryl group Chemical group 0.000 claims description 17
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 14
- 239000006185 dispersion Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- -1 1-benzyl- Benzoyl Chemical group 0.000 claims description 11
- FFSAXUULYPJSKH-UHFFFAOYSA-N butyrophenone Chemical compound CCCC(=O)C1=CC=CC=C1 FFSAXUULYPJSKH-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 150000002431 hydrogen Chemical class 0.000 claims description 9
- 238000006116 polymerization reaction Methods 0.000 claims description 9
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 6
- 125000003700 epoxy group Chemical group 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 5
- 239000006229 carbon black Substances 0.000 claims description 5
- 229940059574 pentaerithrityl Drugs 0.000 claims description 5
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 5
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 claims description 4
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000007259 addition reaction Methods 0.000 claims description 4
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000000732 arylene group Chemical group 0.000 claims description 3
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000003566 oxetanyl group Chemical group 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 claims description 2
- PPHOVLUFQLXZRB-UHFFFAOYSA-N 1-chloro-4-propylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C(CCC)=CC=C2Cl PPHOVLUFQLXZRB-UHFFFAOYSA-N 0.000 claims description 2
- YEVTUGALQOMHLK-UHFFFAOYSA-N 1-ethyl-1,3,5-triazinane-2,4,6-trione Chemical compound CCN1C(=O)NC(=O)NC1=O YEVTUGALQOMHLK-UHFFFAOYSA-N 0.000 claims description 2
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 claims description 2
- HAZQZUFYRLFOLC-UHFFFAOYSA-N 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=CC=CC=2)=N1 HAZQZUFYRLFOLC-UHFFFAOYSA-N 0.000 claims description 2
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 claims description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- YDTZWEXADJYOBJ-UHFFFAOYSA-N 9-(7-acridin-9-ylheptyl)acridine Chemical compound C1=CC=C2C(CCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 YDTZWEXADJYOBJ-UHFFFAOYSA-N 0.000 claims description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229940095102 methyl benzoate Drugs 0.000 claims description 2
- 229920003986 novolac Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 claims description 2
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 claims description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 2
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical group C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 claims 1
- JKQRNTIBBOTABS-UHFFFAOYSA-N 2-(2,4-dichlorophenyl)-1-[2-(2,4-dichlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC(Cl)=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC(Cl)=CC=2)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JKQRNTIBBOTABS-UHFFFAOYSA-N 0.000 claims 1
- QTUVQQKHBMGYEH-UHFFFAOYSA-N 2-(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC=NC=N1 QTUVQQKHBMGYEH-UHFFFAOYSA-N 0.000 claims 1
- DZZAHLOABNWIFA-UHFFFAOYSA-N 2-butoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCCCC)C(=O)C1=CC=CC=C1 DZZAHLOABNWIFA-UHFFFAOYSA-N 0.000 claims 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 claims 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 claims 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims 1
- 125000005641 methacryl group Chemical group 0.000 claims 1
- 229920001451 polypropylene glycol Polymers 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 125000006850 spacer group Chemical group 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000003786 synthesis reaction Methods 0.000 description 15
- XKNLMAXAQYNOQZ-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.OCC(CO)(CO)CO XKNLMAXAQYNOQZ-UHFFFAOYSA-N 0.000 description 10
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Natural products CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000007792 addition Methods 0.000 description 4
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- 239000000047 product Substances 0.000 description 3
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- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
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- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
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- DKTOWFDVEJQWPF-UHFFFAOYSA-N 1-ethylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CC DKTOWFDVEJQWPF-UHFFFAOYSA-N 0.000 description 1
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- JHGGYGMFCRSWIZ-UHFFFAOYSA-N 2,2-dichloro-1-(4-phenoxyphenyl)ethanone Chemical compound C1=CC(C(=O)C(Cl)Cl)=CC=C1OC1=CC=CC=C1 JHGGYGMFCRSWIZ-UHFFFAOYSA-N 0.000 description 1
- 125000004201 2,4-dichlorophenyl group Chemical group [H]C1=C([H])C(*)=C(Cl)C([H])=C1Cl 0.000 description 1
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- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- RJOCUAHXBISKPN-UHFFFAOYSA-N 2-benzyl-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)CC1=CC=CC=C1 RJOCUAHXBISKPN-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- LETDRANQSOEVCX-UHFFFAOYSA-N 2-methyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound CC1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 LETDRANQSOEVCX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- HQNNYBUALGIZMA-UHFFFAOYSA-N C1(CC2C(CC1)O2)CO[Si](OC)(OC)CC.C(C2CO2)OCCC[Si](OC)(OC)C Chemical compound C1(CC2C(CC1)O2)CO[Si](OC)(OC)CC.C(C2CO2)OCCC[Si](OC)(OC)C HQNNYBUALGIZMA-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- DBLVXHJTZIDGHE-UHFFFAOYSA-N ethyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(C)=O.OCCOCCO DBLVXHJTZIDGHE-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Materials For Photolithography (AREA)
Abstract
Description
본 발명은 음성 포토레지스트 조성물에 관한 것으로, 보다 상세하게는 액정표시소자의 R.G.B. 서브픽셀, 블랙매트릭스(black matrix), 포토스페이서(photospacer) 및 UV 오버코트(overcoat), 유기절연막 형성시 패턴의 내열성 및 내흡습성이 우수하여 절연특성이 뛰어나고, 알칼리 현상액으로 현상되어 패턴 형성이 가능한 음성 포토레지스트 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a negative photoresist composition, and more particularly to a negative photoresist composition. A black matrix, a photospacer and an UV overcoat, a pattern having excellent heat resistance and hygroscopic hygroscopicity when the organic insulating film is formed and having excellent insulation characteristics, and being developed with an alkaline developer to form a pattern To a photoresist composition.
액정표시소자의 R.G.B. 서브픽셀, 블랙매트릭스, 포토 스페이서 및 UV오버코트, 유기절연막 등에 사용되는 패턴을 형성하기 위해 감광성 재료가 사용되고 있다.R.G.B. Photosensitive materials are used to form patterns used for subpixels, black matrixes, photo spacers, UV overcoats, organic insulating films, and the like.
이러한 패턴 제조공정에 사용되는 감광성 수지는 평탄성, 투과도, 내열성, 내화학성 및 내흡습성이 우수한 재료가 요구된다. 현재 R.G.B. 서브픽셀, 블랙매트릭스, 포토스페이서 및 UV오버코트, 유기절연막 등에 사용되고 있는 아크릴계 감광성 수지는 220℃이하의 공정에서는 가시(visible)영역에서 95%이상의 높은 투과도를 나타내는 반면, 230℃이상의 고온 공정에서는 열 안정성이 취약하여 열에 의해 수지의 일부가 분해되고, 이로 인해 가시 영역에서의 투과도가 감소하며, 고온 공정 중에 분해된 분자들에 의해 액정을 오염시키는 문제가 있다.The photosensitive resin used in such a pattern manufacturing process is required to have a material having excellent flatness, transparency, heat resistance, chemical resistance and hygroscopicity. Currently, R.G.B. The acrylic photosensitive resin used in the sub-pixel, the black matrix, the photo spacer, the UV overcoat, the organic insulating film and the like exhibits a high transmittance of 95% or more in a visible region at a process temperature of 220 ° C or lower, And the resin is partially decomposed by the heat, thereby decreasing the transmittance in the visible region, and there is a problem that the liquid crystal is contaminated by the decomposed molecules during the high-temperature process.
또한 수계 현상액에 현상하기 위하여 바인더 수지에 사용되는 산성분으로 인하여 수분을 흡착하고, 흡착된 수분이 액정과 박막트랜지스터를 오염시키는 문제가 있다.In addition, there is a problem that water adsorbs due to the acid component used for the binder resin to develop in the aqueous developing solution, and the adsorbed moisture contaminates the liquid crystal and the thin film transistor.
따라서 본 발명이 해결하고자 하는 과제는, 상기와 같은 종래 기술의 문제점을 고려하여, 고온에서 내열성이 뛰어나고 내흡습성이 우수하여 절연특성이 향상되고 바인더 수지에 광기능성을 부여하여 최소한의 다가 단량체 첨가로도 R.G.B. 서브픽셀용 컬러 레지스트, 블랙 매트릭스, 컬럼 스페이서, 유기 절연막 및 UV 오버코트 제조공정에 패턴형성이 용이한 음성 포토레지스트 조성물을 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a binder resin which is excellent in heat resistance at a high temperature and excellent in moisture absorption resistance, RGB It is an object of the present invention to provide a negative photoresist composition which can easily form a pattern in a process of manufacturing a color resist for a subpixel, a black matrix, a column spacer, an organic insulating film and a UV overcoat.
상기 과제를 해결하기 위하여, 본 발명의 일 측면에 따르면, 하기 화학식 1로 표시되는 중합단위 및 하기 화학식 2로 표시되는 1종 이상의 중합단위를 포함하는 바인더 수지 100 중량부;According to an aspect of the present invention, there is provided a binder resin comprising 100 parts by weight of a binder resin comprising a polymerization unit represented by the following formula (1) and at least one polymerization unit represented by the following formula (2):
다가 (메타)아크릴 단량체 5 내지 40 중량부;5 to 40 parts by weight of a polyfunctional (meth) acrylic monomer;
광개시제 0.1 내지 10중량부; 및 0.1 to 10 parts by weight of a photoinitiator; And
용매10 내지 90중량부를 함유하는 음성 포토레지스트 조성물이 제공된다:10 to 90 parts by weight of a solvent are provided:
상기 화학식 1및2에서 R1, R2, R3, 및 R4는 독립적으로 수소 또는 메틸기이며, R5는 수소, 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고, R6는 탄소원자수가 1~10인 알킬렌기, 탄소원자수가 3~10인 시클로알킬렌기, 탄소원자수가 3~10인 알릴렌기, 또는 탄소원자수가 6~10인 아릴렌기이고, R7은 수소, 화학식 3으로 표시되는 치환 또는 비치환 비닐기, 아크릴기 또는 메타아크릴기이며 R8은 -COOR12, -OR13, -OCOR14, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고, Wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen or a methyl group, R 5 is hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, An aryl group having 3 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms and R 6 is an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 3 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, Or an arylene group having 6 to 10 carbon atoms, R 7 is hydrogen, a substituted or unsubstituted vinyl group, an acrylic group or a methacrylic group represented by the formula (3), R 8 is -COOR 12 , - OR 13 , -OCOR 14 , an allyl group having 3 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms,
상기 화학식 3에서 R9, R10, 및 R11은 독립적으로 수소 또는 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고,Wherein R 9 , R 10 and R 11 are independently hydrogen or an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an allyl group having 3 to 10 carbon atoms, Is an aryl group having 6 to 10 carbon atoms,
상기 R12, R13, 및 R14은 독립적으로 수소, 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 탄소원자수가 6~10인 아릴기이고, 단 알킬기, 시클로알킬기, 알릴기, 또는 아릴기의 적어도 하나 이상의 수소가 히드록시기, 글리시딜기, 에폭시기 또는 옥세탄기로 치환될 수 있다.R 12 , R 13 and R 14 are independently hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an allyl group having 3 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms And at least one hydrogen of the alkyl group, cycloalkyl group, allyl group or aryl group may be substituted with a hydroxy group, a glycidyl group, an epoxy group or an oxetane group.
상기 바인더 수지는 화학식 1로 표시되는 중합단위 0.05 내지 0.8몰부와 화학식 2로 표시되는 1종 이상의 중합단위 0.05 내지 0.8몰부를 포함할 수 있다.The binder resin may include 0.05 to 0.8 parts by mol of the polymer unit represented by the formula (1) and 0.05 to 0.8 part by mol of the at least one polymer unit represented by the formula (2).
상기 바인더 수지는 중량평균 분자량이 1,000 내지 300,000이고, 분산도는 1.0 내지 10.0일 수 있다.The binder resin may have a weight average molecular weight of 1,000 to 300,000 and a dispersity of 1.0 to 10.0.
본 발명의 일 실시예에 따른 음성 포토레지스트 조성물은 220℃이상의 고온 공정에서 이미드화 반응을 일으킬 수 있으므로 내열성이 우수하고 고온 공정에서도 거의 분해가 되지 않아 액정오염을 최소화 할 수 있으며, 내흡습성이 매우 우수하여 절연특성이 향상된다. 또한 바인더 수지의 광기능성 부여로 적은 양의 단량체 사용으로도 패턴안정성이 매우 양호하다. 또한 투과율이 우수하여 배터리 효율을 증가시킬 수 있고, 색감이상, 색차계 변화에 대한 영향을 최소화할수 있다. The negative photoresist composition according to an embodiment of the present invention is excellent in heat resistance because it can cause an imidization reaction at a high temperature process of 220 ° C or more and hardly decomposes even in a high temperature process so that liquid crystal contamination can be minimized, The insulating property is improved. In addition, pattern stability is excellent even when a small amount of a monomer is used due to the photo-functionalization of the binder resin. Also, it is possible to increase the battery efficiency because of excellent transmittance, and to minimize the influence on color change and color difference change.
또한, 본 발명의 일 실시예에 따른 음성 포토레지스트 조성물은 바인더 수지의 구조 및 조성비를 변화시키면 요구되는 물성을 가질 수 있다.In addition, the negative photoresist composition according to an embodiment of the present invention may have required physical properties by changing the structure and composition ratio of the binder resin.
이하, 본 발명을 상세히 설명하기로 한다. 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니 되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다. Hereinafter, the present invention will be described in detail. The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.
따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일 실시예에 불과할 뿐이고 본 발명의 기술적 사상에 모두 대변하는 것은 아니므로, 본 출원 시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Therefore, the embodiments described in the present specification and the configurations shown in the drawings are only the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.
본 발명의 일 측면에 따르면, 하기 화학식 1로 표시되는 중합단위 및 하기 화학식 2로 표시되는 1종 이상의 중합단위를 포함하는 바인더 수지 100 중량부; 다가 (메타)아크릴 단량체 5 내지 40 중량부; 광개시제 0.1 내지 10 중량부; 및 용매 10 내지 90중량부를 함유하는 음성 포토레지스트 조성물이 제공된다:According to one aspect of the present invention, there is provided a binder resin comprising 100 parts by weight of a binder resin comprising a polymerization unit represented by the following formula (1) and at least one polymerization unit represented by the following formula (2) 5 to 40 parts by weight of a polyfunctional (meth) acrylic monomer; 0.1 to 10 parts by weight of a photoinitiator; And 10 to 90 parts by weight of a solvent are provided:
[화학식 1][Chemical Formula 1]
[화학식 2](2)
상기 화학식 1 및 2에서 R1, R2, R3, 및 R4는 독립적으로 수소 또는 메틸기이며, R5는 수소, 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고, R6는 탄소원자수가 1~10인 알킬렌기, 탄소원자수가 3~10인 시클로알킬렌기 탄소원자수가 3~10인 알릴렌기, 또는 탄소원자수가 6~10인 아릴렌기이고, R7은 수소, 화학식 3으로 표시되는 치환 또는 비치환 비닐기, 아크릴기, 또는 메타아크릴기이며 R8은 -COOR12, -OR13, -OCOR14, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고, Wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen or a methyl group, R 5 is hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, the carbon atoms of 3 to 10 is an allyl group, or a carbon atoms is 6 to 10 aryl group, R 6 is a carbon atom number of 1 to 10 alkyl group, a carbon atom number of 3 to 10 or a cycloalkylene group of carbon atoms from 3 to Or an arylene group having 6 to 10 carbon atoms, R 7 is hydrogen, a substituted or unsubstituted vinyl group, an acrylic group or a methacrylic group represented by the formula (3), R 8 is -COOR 12 , - OR 13 , -OCOR 14 , an allyl group having 3 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms,
[화학식 3](3)
상기 화학식 3에서 R9, R10, 및 R11은 독립적으로 수소 또는 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고,Wherein R 9 , R 10 and R 11 are independently hydrogen or an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an allyl group having 3 to 10 carbon atoms, Is an aryl group having 6 to 10 carbon atoms,
R12, R13, 및 R14은 독립적으로 수소, 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 탄소원자수가 6~10인 아릴기이고, 이때 알킬기, 시클로알킬기, 알릴기, 또는 아릴기의 적어도 하나 이상의 수소가 히드록시기, 글리시딜기, 에폭시기 또는 옥세탄기로 치환될 수 있다.R 12 , R 13 and R 14 are independently hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an allyl group having 3 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms Wherein at least one hydrogen of the alkyl group, cycloalkyl group, allyl group or aryl group may be substituted with a hydroxyl group, a glycidyl group, an epoxy group or an oxetane group.
상기 바인더 수지는 상기 화학식 1로 표시되는 중합단위 및 화학식 2로 표시되는 1종 이상의 중합단위를 포함하는 공중합체로서, 각 중합단위의 배열순서에 구속되지 않는 랜덤 공중합체일 수 있으나, 이에 한정되는 것은 아니다.The binder resin may be a random copolymer which is a copolymer including the polymerization unit represented by the formula (1) and the at least one polymerization unit represented by the formula (2), but is not bound to the arrangement order of the polymerization units. It is not.
이때, 상기 바인더 수지는 화학식 2로 표시되는 중합단위를 1종 또는, 서로 상이한 2종 이상을 포함할 수도 있다.Here, the binder resin may include one kind of polymerized units represented by the general formula (2), or two or more kinds of different polymerized units.
상기 바인더 수지는 화학식 1로 표시되는 중합단위 0.05 내지 0.8몰부와 화학식 2로 표시되는 중합단위 0.05 내지 0.8몰부를 포함할 수 있다.The binder resin may include 0.05 to 0.8 parts by mol of the polymer unit represented by the formula (1) and 0.05 to 0.8 part by mol of the polymer unit represented by the formula (2).
또한, 상기 바인더 수지는 중량평균 분자량이 1,000 내지 300,000이고, 분산도가 1.0 내지 10.0인 것이 바람직하며, 중량평균 분자량이 4,000 내지 100,000이고, 분산도가 1.5 내지 3.0인 것이 더욱 바람직하다. The binder resin preferably has a weight average molecular weight of 1,000 to 300,000 and a degree of dispersion of 1.0 to 10.0, more preferably a weight average molecular weight of 4,000 to 100,000 and a dispersity of 1.5 to 3.0.
상기 다가 (메타)아크릴 단량체는1개 이상의 (메타)아크릴기를 갖는 중합성 화합물로서, 그 예로는 에틸렌옥사이드기의 수가 2 내지 20인 폴리에틸렌글리콜디(메타)아크릴레이트, 에틸렌글리콜디(메타)아크릴레이트, 프로필렌옥사이드기의 수가 2 내지 14인 폴리프로필렌글리콜디(메타)아크릴레이트, 프로필렌글리콜디(메타)아크릴레이트, 트리메틸올프로판디(메타)아크릴레이트, 비스페놀 A와 디글리시딜에테르(메타)아크릴산의 부가 반응 생성물, 에틸이소시아눌릭산트리(메타)아크릴레이트, β-히드록시에틸(메타)아크릴레이트의프탈산디에스테르, β-히드록시에틸(메타)아크릴레이트와톨루엔디이소시아네이트의 부가 반응 생성물, 트리메틸올프로판트리(메타)아크릴레이트, 테트라메틸올메탄테트라(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트, 디펜타에리스리톨트리(메타)아크릴레이트, 우레탄(메타)아크릴레이트(우레탄과 (메타)아크릴레이트의 가교물, 코와케미칼사의 U series, UA series), 노볼락에폭시 수지와 (메타)아크릴산의 생성물을 프탈산무수물과 반응시킨 에폭시아크릴 화합물, 및 트리메틸올프로판트리글리시딜에테르와 아크릴산의 부가 반응 생성물로 이루어진 군으로부터 선택된 어느 하나 또는 둘 이상을 혼합하여 사용할 수 있다.The polyfunctional (meth) acrylic monomer is a polymerizable compound having at least one (meth) acrylic group, examples of which include polyethylene glycol di (meth) acrylate having 2 to 20 ethylene oxide groups, ethylene glycol di (meth) Propylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, trimethylol propane di (meth) acrylate, bisphenol A and diglycidyl ether (meth) acrylate having 2 to 14 propylene oxide groups ) Addition product of acrylic acid, ethyl isocyanuric acid tri (meth) acrylate, phthalic acid diester of? -Hydroxyethyl (meth) acrylate, addition of? -Hydroxyethyl (meth) acrylate and toluene diisocyanate (Meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (Meth) acrylate, dipentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (metha) acrylate, dipentaerythritol tri (U series), novolak epoxy resin and an epoxy acryl compound obtained by reacting a product of (meth) acrylic acid with phthalic anhydride, and trimethylolpropane triglycidyl ether And an addition reaction product of acrylic acid and acrylic acid may be used in combination.
상기 다가 (메타)아크릴 단량체의 함량은 상기 바인더 수지 100 중량부를 기준으로 5 내지 40 중량부, 더 바람직하게는 2 내지 30 중량부일 수 있다. The content of the polyfunctional (meth) acrylic monomer may be 5 to 40 parts by weight, more preferably 2 to 30 parts by weight, based on 100 parts by weight of the binder resin.
상기 다가 (메타)아크릴 단량체의 함량이 이러한 범위를 만족하는 경우, 노광 및 현상공정 진행 후에 노광된 부분의 잔막율이 매우 우수하게 유지될 수 있으며, 필름의 가교도가 최적으로 유지되어 필름의 물성 및 열안정성을 매우 우수하게 유지할 수 있다.When the content of the polyvalent (meth) acrylic monomer is in this range, the residual film ratio of the exposed part after the exposure and development process can be kept very good, and the degree of crosslinking of the film can be maintained optimally, The thermal stability can be maintained to be very excellent.
즉, 상기 다가 (메타)아크릴 단량체와 바인더 수지의 조성비를 조절함으로써, 필름의 연성, 내화학성 및 패턴안정성을 유지할 수 있는 음성 포토레지스트 조성물을 제조하는 것이 가능하다.That is, it is possible to produce a negative photoresist composition which can maintain the ductility, chemical resistance and pattern stability of the film by controlling the composition ratio of the polyfunctional (meth) acrylic monomer and the binder resin.
또한, 상기 광개시제로는 일반적으로 사용되는 아세토페논계 화합물, 벤조페논계화합물 또는 옥심유도체 화합물을 사용할 수 있다. 이때, 광개시제 자체가 색을 가지는 경우, 음성 포토레지스트 조성물의 투명성을 저하시킬 수 있으므로, 노광시 사용되는 파장대에서 적절한 감도를 가지며 광개시제 자체는 색을 갖지 않는 것을 사용함으로써 고투명성을 실현할 수 있다. As the photoinitiator, acetophenone-based compounds, benzophenone-based compounds or oxime derivative compounds generally used can be used. At this time, when the photoinitiator itself has a color, transparency of the negative photo-resist composition can be lowered. Therefore, it is possible to achieve high transparency by using a photoinitiator which has appropriate sensitivity in the wavelength range used for exposure and does not have color.
따라서, 다가 (메타)아크릴 단량체를 사용하여 가교반응이 이루어져 형성되는 본 발명의 일 실시예에 따른 음성 포토레지스트 조성물에 있어서, 사용되는 광개시제는 사용되는 자외선의 파장을 고려하여 적절하게 선택될 수 있고, 통상적으로 사용되는 수은 램프를 사용하는 경우, 수은 램프는 310∼450nm 영역의 자외선 파장을 가지므로, 이 파장 영역에서 라디칼을 발생하는 광개시제를 사용하는 것이 바람직하다.Accordingly, in the negative photoresist composition according to an embodiment of the present invention, which is formed by a cross-linking reaction using a polyfunctional (meth) acrylic monomer, the photoinitiator used can be appropriately selected in consideration of the wavelength of ultraviolet light used When a mercury lamp which is commonly used is used, the mercury lamp has an ultraviolet wavelength in the range of 310 to 450 nm. Therefore, it is preferable to use a photoinitiator that generates radicals in this wavelength range.
상기와 같은 광개시제로는 예를 들면, 트리페닐포스핀옥사이드, 벤조페논, 페닐비페닐케톤, 1-히드록시-1-벤조일시클로헥산, 벤질디메틸케탈, 1-벤질-1-디메틸아미노-1-(4-모폴리노-벤조일)프로판, 2-모폴릴-2-(4-메틸머캅토) 벤조일프로판, 치오잔톤(thioxanthone), 1-클로로-4-프로필치오잔톤, 이소프로필치오잔톤, 디에틸치오잔톤, 에틸안트라퀴논, 4-벤조일-4-메틸디페닐설파이드, 벤조인부틸에테르, 2-히드록시-2-벤조일프로판, 2-히드록시-2-(4-이소프로필)벤조일프로판, 4-부틸벤조일트리클로로메탄, 4-페녹시벤조일디클로로메탄, 벤조일포름산메틸, 1,7-비스(9-아크리디닐)헵탄, 9-n-부틸-3,6-비스 (2-모폴리노-이소부틸로일)카바졸, 2-메틸-4,6-비스 (트리클로로메틸)-s-트리아진, 2-페닐-4,6-비스(트리클로로메틸)-s-트리아진, 2-나프틸-4,6-비스 (트리클로로메틸)-s-트리아진, 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부탄온-1, 2-메틸-1-[(4-메틸티오)페닐]-2-모르폴리노프로판-1-온, 2,2'-비스(2,4-디클로로페닐)-4,4',5,5'-테트라페닐-1,2'-비이미다졸, 4,4'-비스(디에틸아미노)벤조페논, 2-머캅토벤조티아졸 등이 있을 수 있고, 이들 중 1종 또는 2종 이상의 혼합물을 사용할 수 있다.Examples of the photoinitiator include triphenylphosphine oxide, benzophenone, phenylbiphenylketone, 1-hydroxy-1-benzoylcyclohexane, benzyldimethylketal, 1-benzyl- (4-morpholino-benzoyl) propane, 2-morpholyl-2- (4-methylmercapto) benzoyl propane, thioxanthone, 1-chloro-4-propylthioxanthone, 2-hydroxy-2-benzoylpropane, 2-hydroxy-2- (4-isopropyl) benzoylpropane, ethylthioxanthone, ethyl anthraquinone, 4-benzoyl- Butyl benzoyl trichloromethane, 4-phenoxybenzoyl dichloromethane, methyl benzoate, 1,7-bis (9-acridinyl) heptane, 9-n-butyl- (Trichloromethyl) -s-triazine, 2-phenyl-4,6-bis (trichloromethyl) -s-triazine, 2-naphthyl-4,6-bis (trichloromethyl) -s-tri Benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2-methyl- (2,4-dichlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 4,4'-bis Amino) benzophenone, 2-mercaptobenzothiazole and the like, or a mixture of two or more of them may be used.
상기 광개시제는 상기 바인더 수지 100 중량부 기준으로 0.1 내지 10 중량부, 더 바람직하게는 0.05 내지 7 중량부로 포함될 수 있다. 상기 광개시제의 함량이 이러한 범위를 만족하는 경우, 투명성을 높이며 노광량을 최소화할 수 있고, 상기 범위 보다 작은 경우에는 낮은 감도로 인해 잔막율이 나빠지게 될 수 있고, 상기 범위 보다 많은 경우에는 보존안정성에 문제가 발생할 수 있으며, 높은 경화도로 인해 현상시 패턴의 접착력이 저하되는 문제점이 생길 수 있다.The photoinitiator may be included in an amount of 0.1 to 10 parts by weight, more preferably 0.05 to 7 parts by weight, based on 100 parts by weight of the binder resin. When the content of the photoinitiator is within this range, transparency can be increased and the amount of exposure can be minimized. If the content is smaller than the above range, the residual film ratio may be deteriorated due to low sensitivity. There is a problem that the adhesion of the pattern may be deteriorated due to a high degree of curing.
본 발명의 일 실시예에 따른 음성 포토레지스트 조성물은 용매를 가하여 기판 위에 스핀코팅한 후 마스크를 이용하여 자외선을 조사하여 알칼리 현상액으로 현상하는 방법을 통하여 패턴을 형성할 수 있다.A negative photoresist composition according to an embodiment of the present invention may be patterned by applying a solvent and spin-coating the substrate, and then irradiating ultraviolet rays using a mask to develop the negative photoresist composition with an alkaline developer.
이러한 용매는 바인더 수지, 광개시제 및 기타 첨가물을 첨가, 혼합하여 용해하는데 사용할 뿐만 아니라 우수한 코팅성과 투명한 박막을 얻기 위해 사용한다. These solvents are used not only for the addition, mixing and dissolution of binder resins, photoinitiators and other additives but also for obtaining excellent coating properties and transparent thin films.
상기 유기 용매는 바인더 수지, 감광제 및 기타 화합물과의 상용성을 고려할 때 에틸아세테이트, 부틸아세테이트, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디메틸에틸에테르, 메틸메톡시프로피오네이트, 에틸에톡시프로피오네이트(EEP), 에틸락테이트, 프로필렌글리콜메틸에테르아세테이트(PGMEA), 프로필렌글리콜메틸에테르, 프로필렌글리콜프로필에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 디에틸렌글리콜메틸아세테이트, 디에틸렌글리콜에틸아세테이트, 아세톤, 메틸이소부틸케톤, 시클로헥사논, 디메틸포름아미드(DMF), N,N-디메틸아세트아미드(DMAc), N-메틸-2-피롤리돈(NMP), γ-부티로락톤, 디에틸에테르, 에틸렌글리콜디메틸에테르, 다이글라임(Diglyme), 테트라하이드로퓨란(THF), 메탄올, 에탄올, 프로판올, 이소-프로판올, 메틸셀로솔브, 에틸셀로솔브, 디에틸렌글리콜메틸에테르, 디에틸렌글리콜에틸에테르, 디프로필렌글리콜메틸에테르, 톨루엔, 크실렌, 헥산, 헵탄 및 옥탄 중에서 선택된 용매를 단독으로 또는 2종 이상을 혼합한 용매를 사용할 수 있다.The organic solvent may be selected from the group consisting of ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxy propionate, ethyl ethoxypropionate (EEP), ethyl lactate, propylene glycol methyl ether acetate (PGMEA), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate , N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), gamma -butyrolactone, di Ethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran (THF), methanol, ethanol, propanol, iso-propanol, Solvents selected from the group consisting of sorb, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, heptane and octane may be used alone or as a mixture of two or more thereof .
이때, 상기 용매는 음성 포토레지스트 조성물의 점도가 1 내지 50cps 범위가 되도록 첨가하는 것이 바람직하며, 그 함량은 바인더 수지 100 중량부 기준으로 10 내지 90 중량부로 알맞은 점도로 제조하여 사용하도록 한다.At this time, the solvent is preferably added so that the viscosity of the negative photoresist composition is in the range of 1 to 50 cps. The content of the solvent is 10 to 90 parts by weight based on 100 parts by weight of the binder resin.
또한, 본 발명의 일 실시예에 따른 음성 포토레지스트 조성물은 필요에 따라 접착보조제로서, 에폭시기 또는 아민기를 갖는 실리콘계 화합물을 더 포함할 수 있다.In addition, the negative photoresist composition according to an embodiment of the present invention may further comprise, as necessary, a silicone compound having an epoxy group or an amine group as an adhesion promoter.
이러한 실리콘계 화합물은 ITO 전극과 음성 포토레지스트 조성물과의 접착력을 향상시키며, 경화 후 내열 특성을 증대시키는 역할을 할 수 있다. Such a silicone compound improves the adhesion between the ITO electrode and the negative photoresist composition, and can improve heat resistance after curing.
이러한 에폭시기 또는 아민기를 갖는 실리콘계 화합물로는 (3-글리시드옥시프로필)트리메톡시실레인, (3-글리시드옥시프로필)트리에톡시실레인, (3-글리시드옥시프로필)메틸디메톡시실레인, 3,4-에폭시부틸트리메톡시실레인, 3,4-에폭시부틸트리에톡시실레인, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실레인, 2-(3,4-에폭시시클로헥실)에틸트리에톡시실레인 또는 (3-아미노프로필)트리메톡시실레인 등이 있으며, 이들을 각각 단독으로 또는 이들을 2종 이상을 혼합하여 사용할 수 있다.Examples of the silicone compound having an epoxy group or an amine group include (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxybutyltrimethoxysilane), 3,4-epoxybutyltrimethoxysilane, -Epoxycyclohexyl) ethyltriethoxysilane or (3-aminopropyl) trimethoxysilane, which may be used alone or in combination of two or more thereof.
상기 실리콘계 화합물의 함량은 필요에 따라 적절하게 선택될 수 있으며, 예를 들면 바인더 수지 100 중량부 기준으로 0.001 내지 0.01 중량부, 더 바람직하게는 0.0005 내지 0.008 중량부일 수 있다. 상기 실리콘계 화합물의 함량이 이러한 범위를 만족하는 경우, 음성 포토레지스트 조성물의 접착 효과 및 경화 후 내열성이 매우 우수하게 나타날 수 있고, 현상액 내에서 비노광부의 백화현상 및 현상 후 컨텍 홀이나 패턴의 스컴(scum)이 발생하는 문제를 완전히 해소할 수 있다. The content of the silicone compound may be appropriately selected, for example, 0.001 to 0.01 part by weight, more preferably 0.0005 to 0.008 part by weight based on 100 parts by weight of the binder resin. When the content of the silicone compound satisfies this range, the adhesive effect of the negative photoresist composition and the heat resistance after curing can be very excellent, and the whitening phenomenon of the non-exposed portion in the developer and the scum scum) can be completely solved.
또한, 본 발명의 일 실시예에 따른 음성 포토레지스트 조성물이 컬러필터의 제조에 사용되는 경우에는 통상적으로 사용되는 컬러 분산체 (밀베이스, millbase), 즉 R.G.B 분산체를 더 포함할 수 있다. 첨가되는 컬러 분산체의 함량은 필요에 따라 적절하게 선택될 수 있으며, 예를 들면 바인더 수지 100 중량부 기준으로 10 내지 50 중량부, 더 바람직하게는 20 내지 40 중량부일 수 있다. 상기 컬러 분산체의 함량이 이러한 범위를 만족하는 경우, 얻어지는 컬러필터의 색순도 및 휘도 특성이 매우 우수할 수 있다.Further, when the negative photoresist composition according to an embodiment of the present invention is used in the production of a color filter, it may further include a color dispersion (mill base), i.e., a R.G.B dispersion, which is conventionally used. The content of the color dispersion to be added may be appropriately selected according to need, and may be, for example, 10 to 50 parts by weight, more preferably 20 to 40 parts by weight, based on 100 parts by weight of the binder resin. When the content of the color dispersion satisfies this range, the color purity and luminance characteristic of the obtained color filter can be very excellent.
또한, 본 발명의 일 실시예에 따르면, 상기 음성 포토레지스트 조성물이 레진 블랙매트릭스(BM)에 사용되는 경우에는, 통상적으로 사용되는 카본블랙 분산체(밀베이스, millbase)를 더 포함할 수 있다. 첨가되는 카본블랙 분산체의 함량은 필요에 따라 적절하게 선택될 수 있으며, 예를 들면 바인더 수지 100 중량부 기준으로 10 내지 50 중량부, 더 바람직하게는 20 내지 40 중량부일 수 있다. According to an embodiment of the present invention, when the negative photoresist composition is used in a resin black matrix (BM), a carbon black dispersion (mill base) commonly used may be further included. The content of the carbon black dispersion to be added may be appropriately selected according to need, and may be, for example, 10 to 50 parts by weight, more preferably 20 to 40 parts by weight, based on 100 parts by weight of the binder resin.
상기 카본블랙 분산체의 함량이 이러한 범위를 만족하는 경우에 가시광선의 차단 효과가 매우 우수함과 동시에 현상특성도 우수하게 유지할 수 있다.When the content of the carbon black dispersion satisfies the above range, the blocking effect of the visible light is excellent and the developing characteristic can be maintained to be excellent.
또한, 본 발명의 일 실시예에 따른 음성 포토레지스트 조성물에는 필요에 따라 광증감제, 열중합금지제, 소포제, 레벨링제 등의 상용성이 있는 첨가제를 첨가할 수 있다.In addition, compatible additives such as a photosensitizer, a thermosetting agent, a defoamer, and a leveling agent may be added to the negative photoresist composition according to an embodiment of the present invention.
이하, 본 발명을 구체적으로 설명하기 위해 합성예 및 실시예 그리고 비교예를 들어 상세하게 설명하기로 한다. 그러나, 본 발명에 따른 합성예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술하는 합성예들에 한정되는 것으로 해석되어서는 안된다. 본 발명의 합성예들은 당 업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게설명하기 위해서 제공되는 것이다.Hereinafter, the present invention will be described in detail with reference to Synthesis Examples, Examples and Comparative Examples. However, the synthesis examples according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the synthesis examples described below. The synthetic examples of the present invention are provided to enable those skilled in the art to more fully understand the present invention.
<바인더 제조><Preparation of Binder>
합성예 1 내지 8Synthesis Examples 1 to 8
3구 둥근 플라스크에 하기 표 1에 기재된 바인더 수지 형성용 단량체 중 좌측 단량체를 투입하고, 열개시제로서 2,2'-아조비스(2.4-다이메틸발레로나이트릴) 및 분자량 조절제로서 도데실머캅톤을 첨가하였다. 이때 좌측 단량체 총합 100 중량부 기준으로 열개시제인 2,2'-아조비스(2.4-다이메틸발레로나이트릴)은 5 중량부를, 분자량 조절제인 도데실머캅톤은 3 중량부를 사용하였다.To the three-necked round flask, the left monomer out of the binder resin forming monomers described in Table 1 below was added, 2,2'-azobis (2,4-dimethylvaleronitrile) was used as a thermal initiator, and dodecylmercapton . At this time, 5 parts by weight of 2,2'-azobis (2,4-dimethylvaleronitrile) as a thermal initiator and 3 parts by weight of dodecylmercapton as a molecular weight modifier were used based on 100 parts by weight of the total amount of the monomers.
이후, 용매로서 메틸메톡시프로피오네이트(MMP)를 투입하여 65℃에서 5 시간 동안 교반하였다. 이어서, 표 1에 기재된 우측 단량체를 투입하고, 상온에서 24 시간 동안 반응시켜, 고형분 함량이 40 중량%가 되도록 바인더 수지를 합성하였다.Thereafter, methyl methoxypropionate (MMP) was added as a solvent, and the mixture was stirred at 65 ° C for 5 hours. Then, the right monomer shown in Table 1 was added and reacted at room temperature for 24 hours to synthesize a binder resin so that the solid content became 40% by weight.
하기 표 1에서 바인더 수지 형성용 단량체(좌측 단량체, 우측 단량체) 및 용매의 아래 괄호 안에 있는 수치는 각각 중량%를 의미하고, 특히 좌측 단량체들 각각 옆에 기재된 괄호 안에 있는 수치는 이들 간의 중량비를 의미한다.The values in parentheses below the binder resin forming monomers (left monomers, right monomers) and solvent in Table 1 below indicate weight percent, respectively, and in particular the numbers in brackets next to each of the left monomers indicate the weight ratio between them do.
따라서, 예를 들어, 합성예 1의 경우는 바인더 수지 형성용 단량체로서 먼저 좌측 단량체인 말레익안하이드라이드 및 스티렌을 30 중량%와 용매인 메틸메톡시프로피오네이트 40 중량% (100 - 30 - 30 = 40 중량%)를 첨가하고, 이후 우측 단량체인 아닐린 30 중량%를 투입하여 반응시켜 바인더 수지를 합성하였다.Thus, for example, in the case of Synthesis Example 1, 30% by weight of maleic anhydride and styrene, which are the left monomers, and 40% by weight of methylmethoxypropionate as a solvent (100 - 30 - 30 = 40% by weight) was added, and then 30% by weight of aniline, which is a right monomer, was added and reacted to synthesize a binder resin.
상기 좌측 단량체에서 말레익안하이드라이드 및 스티렌은 그 중량비가 0.3:0.7이 되도록 혼합하여 사용하였다.In the left monomer, maleic anhydride and styrene were mixed and used in a weight ratio of 0.3: 0.7.
이와 동일하게 다른 합성예 2 내지 8도 하기 표 1에 기재된 함량에 따라서 사용하여 반응시킴으로써 바인더 수지를 각각 합성하였다.Similarly, other Synthesis Examples 2 to 8 were also used in accordance with the contents shown in the following Table 1 to synthesize a binder resin.
하기 표 2에서 전술한 합성예 1 내지 8로부터 제조된 바인더 수지의 중량평균분자량과 분산도를 기재하였다.The weight average molecular weight and the degree of dispersion of the binder resin prepared in Synthesis Examples 1 to 8 described above in Table 2 were described.
실시예Example 1 One
자외선 차단막과 교반기가 설치되어 있는 반응 혼합조에 하기 표 3에 기재된 조성 및 함량에 따라 바인더 수지, 다가 (메타)아크릴 단량체, 광개시제를 순차적으로 첨가하고 FC-430(3M사, 레벨링제) 0.1 중량%를 첨가하여 음성 포토레지스트 조성물을 제조한 후 상온에서 교반하였다. 이어서, 조성물에 메틸메톡시프로피오네이트(MMP)를 첨가하여 음성 포토레지스트 조성물의 점도를 18cps로 조절하였다.A binder resin, a polyvalent (meth) acrylic monomer and a photoinitiator were sequentially added to a reaction mixture tank equipped with an ultraviolet shielding film and a stirrer according to the composition and content shown in Table 3 below, and 0.1 wt% of FC-430 (3M, leveling agent) Was added to prepare a negative photoresist composition, followed by stirring at room temperature. Methyl methoxypropionate (MMP) was then added to the composition to adjust the viscosity of the negative photoresist composition to 18 cps.
실시예 2 내지 8Examples 2 to 8
조성물의 성분 및 함량을 하기 표 3에 기재된 조성에 따라서 변화시킨 것을 제외하고는 실시예 1과 동일한 방법으로 음성 포토레지스트 조성물을 제조하였다.
A negative photoresist composition was prepared in the same manner as in Example 1, except that the composition and the content of the composition were changed according to the compositions shown in Table 3 below.
(중량%)Synthetic example
(weight%)
(중량%)The polyvalent (meth) acrylic monomer
(weight%)
(중량%)Photoinitiator
(weight%)
(중량%)menstruum
(weight%)
(30)Synthesis Example 1
(30)
헥사아크릴레이트
(20)Dipentaerythritol
Hexaacrylate
(20)
(1)Methyl-1 - [(4-methylthio) phenyl] -2-morpholinopropane-1-one
(One)
(to 100)Methyl methoxy propionate
(to 100)
(30)Synthesis Example 2
(30)
(20)Addition product of bisphenol A wodiglycidyl ether acrylic acid
(20)
(0.5)2-mercaptobenzothiazole
(0.5)
(30)Synthesis Example 3
(30)
(20)Tetramethylolmethane tetramethacrylate
(20)
(2)4-benzoyl-4-methyldiphenyl sulfide
(2)
(30)Synthesis Example 4
(30)
(10)Trimethylolpropane triacrylate
(10)
(1)2-methyl-4,6-bis (trichloromethyl) -s-triazine
(One)
(30)Synthesis Example 5
(30)
(15)Phthalic acid diester of? -Hydroxyethyl methacrylate
(15)
(1)2-morpholyl-2- (4-methylmercapto) benzoylpropane
(One)
(30)Synthesis Example 6
(30)
(10)Tetramethylolmethane tetramethacrylate
(10)
(1)Methyl-1 - [(4-methylthio) phenyl] -2-morpholinopropane-1-one
(One)
(30)Synthesis Example 7
(30)
디펜타에리스리톨
헥사아크릴레이트(5)Trimethylolpropane triacrylate (5)
Dipentaerythritol
Hexaacrylate (5)
(1.5)2-morpholyl-2- (4-methylmercapto) benzoylpropane
(1.5)
(30)Synthesis Example 8
(30)
디펜타에리스리톨
헥사아크릴레이트(5)Trimethylolpropane triacrylate (5)
Dipentaerythritol
Hexaacrylate (5)
(3)Isopropyl thioxanthone
(3)
비교예 1 내지 2Comparative Examples 1 to 2
상기 실시예 1의 바인더 수지 대신 하기 화학식 4로 표시되는 바인더 수지를 사용하고, 조성물의 성분 및 함량을 상기 표 3에 기재된 조성에 따라서 변화시킨 것을 제외하고는 실시예 1과 동일한 방법으로 음성 포토레지스트 조성물을 제조하였다. 화학식 4의 바인더 수지들은 중량평균분자량 11,400, 분산도는 2.3이었다.Except that a binder resin represented by the following Chemical Formula 4 was used instead of the binder resin of Example 1 and the composition and the content of the composition were changed according to the composition shown in Table 3, A composition was prepared. The binder resins of Formula 4 had a weight average molecular weight of 11,400 and a degree of dispersion of 2.3.
(30 중량%)The binder resin (4)
(30% by weight)
(중량%)The polyvalent (meth) acrylic monomer
(weight%)
(중량%)Photoinitiator
(weight%)
(중량%)additive
(weight%)
(중량%)menstruum
(weight%)
m : 0.5
n : 0.21: 0.3
m: 0.5
n: 0.2
헥사아크릴레이트
(20)Dipentaerythritol
Hexaacrylate
(20)
(2)2-morpholyl-2- (4-methylmercapto) benzoylpropane
(2)
(0.1)FC-430
(0.1)
(to 100)Propylene glycol monomethyl ether acetate
(to 100)
m : 0.4
n : 0.41: 0.3
m: 0.4
n: 0.4
헥사아크릴레이트
(20)Dipentaerythritol
Hexaacrylate
(20)
(2)2-morpholyl-2- (4-methylmercapto) benzoylpropane
(2)
특성 평가Character rating
이상의 실시예 및 비교예에 있어서 음성 포토레지스트 조성물의 평가는 실리콘 웨이퍼 또는 유리판 등의 기판 위에 코팅하는 방식으로 음성 포토레지스트 조성물의 접착력, UV 투과율, 잔막율, 패턴 형성 등의 성능평가를 실시하였으며, 그 결과를 하기 표 5와 표 6에 나타냈다.In the above examples and comparative examples, the evaluation of the negative photoresist composition was performed by coating on a substrate such as a silicon wafer or a glass plate to evaluate the adhesive strength, UV transmittance, residual film ratio and pattern formation of the negative photoresist composition. The results are shown in Tables 5 and 6 below.
(1) 접착력 평가(1) Evaluation of adhesion
실시예 1 내지 8 및 비교예 1 내지 2에 따른 음성 포토레지스트 조성물을 유리 기판 위에 스핀 코터를 이용하여 각각 도포한 후, 100℃에서 1분간 프리베이크(prebake)하고, 365 nm에서 15초간 노광시킨 후, 240℃에서 30분간 포스트베이크(postbake)를 실시하여 레지스트 막을 형성시키고, 이를 물에 넣어 90℃에서 5 시간 동안 방치하였다. 시편을 크로스 햇치 커터(Cross Hatch Cutter)로 기판이 드러나도록 스크레치(Scratch)한 후 접착 테이프를 부착한 후 떼어내었다. 100 셀 중 80셀이 테이프에 붙어 기판으로부터 탈락되지 않으면 '양호' 그렇지 않은 경우를 '불량'으로 판단하였다.
The negative photoresist compositions according to Examples 1 to 8 and Comparative Examples 1 and 2 were coated on a glass substrate using a spin coater, prebaked at 100 DEG C for 1 minute, exposed at 365 nm for 15 seconds Thereafter, post-baking was performed at 240 캜 for 30 minutes to form a resist film, which was left in water at 90 캜 for 5 hours. The specimens were scratched with a Cross Hatch Cutter to reveal the substrate, and then the adhesive tape was attached and then peeled off. 80 cells out of 100 cells were judged to be 'good' if not attached to the tape, and 'bad' if not.
(2) UV 투과율 평가(2) Evaluation of UV transmittance
실시예 1 내지 9 및 비교예 1 내지 2에 따른 음성 포토레지스트 조성물을 기판 위에 스핀 코터를 이용하여 도포한 후, 100℃에서 1분간 프리베이크(prebake)하고, TMAH 2.38%용액에 60초간 디핑(dipping)현상 후 순수(D.I. Water)로 60초간 린스 후, 압축공기로 불어내고, 240℃에서 30분간 포스트베이크(postbake)를 실시하여 3 마이크로미터(㎛)의 레지스트 막을 형성하고, UV를 투과하여 400nm영역의 투과율을 측정하였다.
The negative photo-resist compositions according to Examples 1 to 9 and Comparative Examples 1 and 2 were applied on a substrate using a spin coater, prebaked at 100 ° C for 1 minute, dipped in a TMAH 2.38% solution for 60 seconds After rinsing with pure water (DI Water) for 60 seconds, the resist film was blown with compressed air and postbaked at 240 캜 for 30 minutes to form a resist film of 3 micrometers (탆) The transmittance of the 400 nm region was measured.
(3) 잔막율 평가(3) Evaluation of residual film ratio
실시예 1 내지 9 및 비교예 1 내지 2에 따른 음성 포토레지스트 조성물을 기판 위에 스핀 코팅하고, 220℃에서 30분간 포스트베이크(postbake)한 후의 두께와 추가로 240℃에서 1시간 더 포스트베이크(postbake)하여 형성된 막의 두께 비율(%)을 측정하였다.
The negative photo-resist compositions according to Examples 1 to 9 and Comparative Examples 1 and 2 were spin-coated on the substrate, and the thickness after post-baking at 220 ° C for 30 minutes was further post-baked at 240 ° C for 1 hour ) Was measured. The thickness ratio (%) of the formed film was measured.
(4) 패턴 형성 평가(4) Pattern formation evaluation
실시예 1 내지 9 및 비교예 1 내지 2에 따른 음성 포토레지스트 조성물을 이용하여 초기 두께 3.0의 박막에 100mJ/cm2 패턴 노광 및 0.045중량%의 KOH 현상액으로 60초 현상 후 230℃/30분에서 하드베이크(hard-bake)를 진행한 조건으로 음성 포토레지스트 패턴을 형성한 실리콘 웨이퍼를 홀(hole) 패턴의 수직 방향에서부터 절단하고, 패턴의 단면 방향에서 전자현미경으로 관찰하였다. 그 결과를 하기 표 5 및 6에 나타내었다. 패턴 사이드 벽(side wall)이 기판에 대하여 55도 이상의 각도로 세워져 있고, 막이 감소되지 않은 것을 '양호'로 하고, 막의 감소가 인정된 것을 '막감(膜減)'으로 판정하였다.Using the negative photoresist compositions according to Examples 1 to 9 and Comparative Examples 1 and 2, a thin film having an initial thickness of 3.0 was exposed to a pattern exposure of 100 mJ / cm 2 with a 0.045 wt% KOH developer for 60 seconds and developed at 230 ° C / Silicon wafers having a negative photoresist pattern formed under hard-bake conditions were cut from the vertical direction of the hole pattern and observed with an electron microscope in the cross-sectional direction of the pattern. The results are shown in Tables 5 and 6 below. The side wall of the pattern was erected at an angle of 55 degrees or more with respect to the substrate, the film was not reduced and the film was judged to be 'good'.
상기 표 5 및 6를 참조하면, 본 발명의 일 실시예에 따른 음성 포토레지스트 조성물은 비교예와 같은 종래의 레지스트 조성물과는 달리 내열성이 우수할 뿐만 아니라, 메탈 및 무기물과의 접착력, UV투과율, 잔막율 및 패턴안정성이 매우 우수함을 알 수 있다.Unlike the conventional resist composition as in the comparative example, the negative photo-resist composition according to one embodiment of the present invention is excellent in heat resistance and has an adhesive strength to a metal and an inorganic substance, a UV transmittance, The residual film ratio and the pattern stability are excellent.
Claims (9)
다가 (메타)아크릴 단량체 5 내지 40중량부;
광개시제0.1 내지 10중량부; 및
용매10 내지 90중량부를 함유하는 음성 포토레지스트 조성물:
[화학식 1]
[화학식 2]
상기 화학식 1 및 2에서 R1, R2, R3, 및 R4는 독립적으로 수소 또는 메틸기이며, R5는 수소, 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고, R6는 탄소원자수가 1~10인 알킬렌기, 탄소원자수가 3~10인 시클로알킬렌기, 탄소원자수가 3~10인 알릴렌기, 또는 탄소원자수가 6~10인 아릴렌기이고, R7은 수소, 화학식 3으로 표시되는 치환 또는 비치환 비닐기, 아크릴기, 또는 메타아크릴기이며 R8은 -COOR12, -OR13, -OCOR14, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고,
[화학식 3]
상기 화학식 3에서 R9, R10, 및 R11은 독립적으로 수소 또는 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 또는 탄소원자수가 6~10인 아릴기이고,
상기 R12, R13, 및 R14은 독립적으로 수소, 탄소원자수가 1~10인 알킬기, 탄소원자수가 3~10인 시클로알킬기, 탄소원자수가 3~10인 알릴기, 탄소원자수가 6~10인 아릴기이고, 단, 알킬기, 시클로알킬기, 알릴기, 또는 아릴기의 적어도 하나 이상의 수소가 히드록시기, 글리시딜기, 에폭시기 또는 옥세탄기로 치환된다.100 parts by weight of a binder resin comprising a polymerization unit represented by the following formula (1) and at least one polymerization unit represented by the following formula (2);
5 to 40 parts by weight of a polyfunctional (meth) acrylic monomer;
0.1 to 10 parts by weight of a photoinitiator; And
Negative photoresist composition containing 10 to 90 parts by weight of a solvent:
[Chemical Formula 1]
(2)
Wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen or a methyl group, R 5 is hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, An aryl group having 3 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms and R 6 is an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 3 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, Or an arylene group having 6 to 10 carbon atoms, R 7 is hydrogen, a substituted or unsubstituted vinyl group, an acrylic group, or a methacryl group, and R 8 is -COOR 12 , -OR 13 , -OCOR 14 , an allyl group having 3 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms,
(3)
Wherein R 9 , R 10 and R 11 are independently hydrogen or an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an allyl group having 3 to 10 carbon atoms, Is an aryl group having 6 to 10 carbon atoms,
R 12 , R 13 and R 14 are independently hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an allyl group having 3 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms , Provided that at least one hydrogen of the alkyl group, cycloalkyl group, allyl group or aryl group is substituted with a hydroxyl group, a glycidyl group, an epoxy group or an oxetane group.
상기 바인더 수지가 화학식 1로 표시되는 중합단위 0.05 내지 0.8몰부 및 화학식 2로 표시되는 1종 이상의 중합단위 0.05 내지 0.8몰부를 포함하는 것을 특징으로 하는 음성 포토레지스트 조성물. The method according to claim 1,
Wherein the binder resin comprises 0.05 to 0.8 parts by mol of a polymeric unit represented by the formula (1) and 0.05 to 0.8 part by mol of at least one polymeric unit represented by the formula (2).
상기 바인더 수지가 1,000 내지 300,000의 중량평균분자량 및 1.0 내지 10.0의 분산도를 가지는 것을 특징으로 하는 음성 포토레지스트 조성물.The method according to claim 1,
Wherein the binder resin has a weight average molecular weight of 1,000 to 300,000 and a dispersity of 1.0 to 10.0.
상기 다가(메타)아크릴 단량체가 에틸렌옥사이드기의 수가 2 내지 20인 폴리에틸렌글리콜디(메타)아크릴레이트, 에틸렌글리콜디(메타)아크릴레이트, 프로필렌옥사이드기의 수가 2 내지 14인 폴리프로필렌글리콜디(메타)아크릴레이트, 프로필렌글리콜디(메타)아크릴레이트, 트리메틸올프로판디(메타)아크릴레이트, 비스페놀 A와 디글리시딜에테르(메타)아크릴산의 부가반응 생성물, 에틸이소시아눌릭산트리(메타)아크릴레이트, β-히드록시에틸(메타)아크릴레이트의프탈산디에스테르, β-히드록시에틸(메타)아크릴레이트와톨루엔디이소시아네이트의 부가 반응 생성물, 트리메틸올프로판트리(메타)아크릴레이트, 테트라메틸올메탄테트라(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트, 디펜타에리스리톨트리(메타)아크릴레이트, 우레탄(메타)아크릴레이트, 노볼락에폭시 수지와 (메타)아크릴산의 생성물을 프탈산무수물과 반응시킨 에폭시아크릴 화합물, 및 트리메틸올프로판트리글리시딜에테르와 아크릴산의 부가 반응 생성물로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 음성 포토레지스트 조성물.The method according to claim 1,
Wherein the polyfunctional (meth) acrylic monomer is at least one selected from polyethylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate having 2 to 20 ethylene oxide groups, polypropylene glycol di (meth) acrylate having 2 to 14 propylene oxide groups (Meth) acrylate, trimethylolpropane di (meth) acrylate, addition reaction products of bisphenol A and diglycidyl ether (meth) acrylic acid, ethyl isocyanuric acid tri (meth) (Meth) acrylate, an addition reaction product of? -Hydroxyethyl (meth) acrylate and toluene diisocyanate, trimethylolpropane tri (meth) acrylate, tetramethylol methane Tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol (Meth) acrylate, dipentaerythritol tri (meth) acrylate, urethane (meth) acrylate, novolak epoxy resin, and (meth) acrylic acid with phthalic anhydride And an addition reaction product of trimethylolpropane triglycidyl ether and acrylic acid. The negative photoresist composition of claim 1,
상기 광개시제가 트리페닐포스핀옥사이드, 벤조페논, 페닐비페닐케톤, 1-히드록시-1-벤조일시클로헥산, 벤질디메틸케탈, 1-벤질-1-디메틸아미노-1-(4-모폴리노-벤조일)프로판, 2-모폴릴-2-(4-메틸머캅토) 벤조일프로판, 치오잔톤(thioxanthone), 1-클로로-4-프로필치오잔톤, 이소프로필치오잔톤, 디에틸치오잔톤, 에틸안트라퀴논, 4-벤조일-4-메틸디페닐설파이드, 벤조인부틸에테르, 2-히드록시-2-벤조일프로판, 2-히드록시-2-(4-이소프로필)벤조일프로판, 4-부틸벤조일트리클로로메탄, 4-페녹시벤조일디클로로메탄, 벤조일포름산메틸, 1,7-비스(9-아크리디닐)헵탄, 9-n-부틸-3,6-비스 (2-모폴리노-이소부틸로일)카바졸, 2-메틸-4,6-비스 (트리클로로메틸)-s-트리아진, 2-페닐-4,6-비스(트리클로로메틸)-s-트리아진, 2-나프틸-4,6-비스 (트리클로로메틸)-s-트리아진, 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)-부탄온-1, 2-메틸-1-[(4-메틸티오)페닐]-2-모르폴리노프로판-1-온, 2,2'-비스(2,4-디클로로페닐)-4,4',5,5'-테트라페닐-1,2'-비이미다졸, 4,4'-비스(디에틸아미노)벤조페논, 및 2-머캅토벤조티아졸로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 음성 포토레지스트 조성물.The method according to claim 1,
Wherein the photoinitiator is selected from the group consisting of triphenylphosphine oxide, benzophenone, phenylbiphenylketone, 1-hydroxy-1-benzoylcyclohexane, benzyldimethylketal, 1-benzyl- Benzoyl) propane, 2-morpholyl-2- (4-methylmercapto) benzoylpropane, thioxanthone, 1-chloro-4-propylthioxanthone, isopropylthioxanthone, diethylthioxanthone, , 4-benzoyl-4-methyldiphenyl sulfide, benzoin butyl ether, 2-hydroxy-2-benzoyl propane, 2-hydroxy- 2- (4-isopropyl) benzoyl propane, 4-butylbenzoyl trichloromethane (4-phenoxybenzoyl) dichloromethane, methyl benzoate, 1,7-bis (9-acridinyl) heptane, 9- (Trichloromethyl) -s-triazine, 2-phenyl-4,6-bis (trichloromethyl) -s-triazine, 2-naphthyl- 6-bis (trichloromethyl) -s-triazine, 2-benzyl-2-dimethyl Methyl-1 - [(4-methylthio) phenyl] -2-morpholinopropane-1-one, 2,2'- Bis (2,4-dichlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 4,4'-bis (diethylamino) benzophenone, Wherein the photoacid generator is at least one selected from the group consisting of a photoinitiator and a photoinitiator.
에폭시기 또는 아민기를 포함하는 실리콘계 화합물 0.001 내지 0.01 중량부를 더 포함하는 것을 특징으로 하는 음성 포토레지스트 조성물.The method according to claim 1,
Further comprising 0.001 to 0.01 part by weight of a silicone compound containing an epoxy group or an amine group.
상기 실리콘계 화합물이 (3-글리시드옥시프로필)트리메톡시실레인, (3-글리시드옥시프로필)트리에톡시실레인, (3-글리시드옥시프로필)메틸디메톡시실레인, 3,4-에폭시부틸트리메톡시실레인, 3,4-에폭시부틸트리에톡시실레인, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실레인, 2-(3,4-에폭시시클로헥실)에틸트리에톡시실레인및(3-아미노프로필)트리메톡시실레인으로 이루어진 군으로부터 선택된 1종 이상을 포함하는 것을 특징으로 하는 음성 포토레지스트 조성물. The method according to claim 6,
(3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane, 3,4- Epoxycyclohexyl) ethyl trimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyl (meth) acrylate, Triethoxysilane, and (3-aminopropyl) trimethoxysilane. The negative photoresist composition of claim 1,
컬러분산체를 10 내지 50 중량부를 더 포함하는 것을 특징으로 하는 음성 포토레지스트 조성물.The method according to claim 1,
And 10 to 50 parts by weight of a color dispersion.
카본블랙 분산체를 10 내지 50 중량부를 더 포함하는 것을 특징으로 하는 음성 포토레지스트 조성물.The method according to claim 1,
Wherein the carbon black dispersion further comprises 10 to 50 parts by weight of the carbon black dispersion.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180084460A (en) | 2017-01-17 | 2018-07-25 | 주식회사 트리엘 | NOVEL COMPOUND having VINYLPHENYLOXY moiety AND PHOTOSENSITIVE PHOTORESIST COMPOSITION INCLUDING THE SAME |
| KR20180084716A (en) | 2018-07-17 | 2018-07-25 | 주식회사 트리엘 | NOVEL COMPOUND having VINYLPHENYLOXY moiety AND PHOTOSENSITIVE PHOTORESIST COMPOSITION INCLUDING THE SAME |
| KR20180109770A (en) | 2018-06-07 | 2018-10-08 | 주식회사 트리엘 | PHOTORESIST COMPOSITION INCLUDING COMPOUND having VINYLPHENYLOXY moiety |
| CN111333782A (en) * | 2020-03-25 | 2020-06-26 | 广东三求光固材料股份有限公司 | Modified styrene-maleic anhydride resin and preparation method and application thereof |
| CN114995057A (en) * | 2022-05-07 | 2022-09-02 | 浙江鑫柔科技有限公司 | Colored photoresist material and preparation method and application thereof |
-
2014
- 2014-11-14 KR KR1020140159171A patent/KR20160057931A/en not_active Ceased
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180084460A (en) | 2017-01-17 | 2018-07-25 | 주식회사 트리엘 | NOVEL COMPOUND having VINYLPHENYLOXY moiety AND PHOTOSENSITIVE PHOTORESIST COMPOSITION INCLUDING THE SAME |
| KR20180109770A (en) | 2018-06-07 | 2018-10-08 | 주식회사 트리엘 | PHOTORESIST COMPOSITION INCLUDING COMPOUND having VINYLPHENYLOXY moiety |
| KR20180084716A (en) | 2018-07-17 | 2018-07-25 | 주식회사 트리엘 | NOVEL COMPOUND having VINYLPHENYLOXY moiety AND PHOTOSENSITIVE PHOTORESIST COMPOSITION INCLUDING THE SAME |
| CN111333782A (en) * | 2020-03-25 | 2020-06-26 | 广东三求光固材料股份有限公司 | Modified styrene-maleic anhydride resin and preparation method and application thereof |
| CN114995057A (en) * | 2022-05-07 | 2022-09-02 | 浙江鑫柔科技有限公司 | Colored photoresist material and preparation method and application thereof |
| WO2023216937A1 (en) * | 2022-05-07 | 2023-11-16 | 浙江鑫柔科技有限公司 | Colored photoresist material, and preparation method therefor and use thereof |
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