KR20140086667A - Etchant composition for copper-containing metal - Google Patents

Abstract

The present invention relates to an etching solution composition of a copper-based metal film, and more particularly, to an etching solution composition capable of improving the process margin by increasing the number of substrates that can be etched by including hydrogen peroxide, a water- To an etchant composition of a copper-based metal film.

Description

[0001] Etchant composition for copper-containing metal [

The present invention relates to an etchant composition of a copper-based metal film.

The process of forming a metal wiring on a substrate in a semiconductor device is generally composed of a metal film forming process by sputtering or the like, a photoresist coating process, a photoresist forming process in an optional region by exposure and development, and an etching process , A cleaning process before and after the individual unit process, and the like. This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. Typically, dry etching using plasma or wet etching using an etching composition is used.

In such a semiconductor device, resistance of metal wiring has recently become a major concern. This is because the resistance is a key factor that causes the RC signal delay, especially in the case of TFT-LCD (thin film transistor-liquid crystal display), because the increase in panel size and realization of high resolution are the key to technology development. Therefore, in order to realize reduction of the RC signal delay which is indispensably required for enlarging the TFT-LCD, it is essential to develop a low resistance material. Thus, the chromium which was mainly used conventionally (Cr, specific resistance: 12.7 × 10 ^-8 Ωm), molybdenum (Mo, specific resistance: 5 × 10 ^-8 Ωm), aluminum (Al, specific resistance: 2.65 × 10 ^-8 Ωm) and their Is difficult to use as a gate and data wiring used in a large-sized TFT LCD.

Under such background, there is a high interest in a copper-based metal film such as a copper film and a copper molybdenum film and an etchant composition thereof as a new low-resistance metal film. However, in the case of the etching solution composition for the copper-based metal film, various kinds are currently used, but the performance required by users is not satisfied.

Korean Patent Laid-Open Publication No. 2004-11041 discloses an etching solution that improves the etching rate of a copper molybdenum film and a method of etching the same.

Korean Patent Publication No. 2004-11041

An object of the present invention is to provide an etchant composition of a copper-based metal film that increases the number of substrates that can be etched.

An object of the present invention is to provide an etching solution composition for a copper-based metal film in which a profile having excellent etching uniformity and linearity is formed, and a residue of a copper-based metal film is not left.

An object of the present invention is to provide an etching solution composition for a copper-based metal film capable of collectively etching a gate wiring and a source / drain wiring.

1. An etching solution composition for a copper-based metal film comprising hydrogen peroxide, a water-soluble compound represented by the following formula (1) and water:

[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R ₃ is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms).

2. The water-soluble compound represented by the above formula (1) is at least one selected from the group consisting of sulfamic acid, N-methylsulfamic acid, N-ethylsulfamic acid, N-propylsulfamic acid, N, , N-ethylmethylsulfamic acid, N, N-methylpropylsulfamic acid, N, N-diethylsulfamic acid, N, N-ethylpropylsulfamic acid, , Ethanesulfonamide, propanesulfonamide, N-methylmethanesulfonamide, N-methylethanesulfonamide, N-methylpropanesulfonamide, N-ethylmethanesulfonamide, N- ethylethanesulfonamide, N- , N, N-dimethylmethanesulfonamide, N, N-dimethylethanesulfonamide, N, N-dimethylpropanesulfonamide, N-ethylmethylpropane sulfonamide, N, N-methylpropylmethanesulfonamide, N, N-methylpropylethanesulfonamate , N, N-methylpropyl propane sulfonamide, N, N-ethyl propyl methane sulfonamide, N, N-ethyl propyl ethane sulfonamide, N, N-ethyl propyl propane sulfonamide, , N, N-diethylethanesulfonamide, N, N-diethylpropanesulfonamide, N, N-dipropyltrimethanesulfonamide, N, Amide, wherein the copper-based metal film is at least one selected from the group consisting of amide,

3. The etching solution composition for a copper-based metal film according to 1 above, wherein the hydrogen peroxide is contained in an amount of 5 to 25% by weight, the water-soluble compound represented by the formula (1) is contained in an amount of 0.1 to 10%

4. The etching solution composition for a copper-based metal film according to 1 above, further comprising a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule.

5. The method of claim 4, wherein the water-soluble compound having a nitrogen atom and a carboxyl group in the molecule is alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, And sarcosine. ≪ RTI ID = 0.0 > 8. < / RTI >

6. The etching solution composition for a copper-based metal film according to 4 above, wherein the water-soluble compound having a nitrogen atom and a carboxyl group in the molecule is contained in an amount of 0.1 to 5% by weight based on the total weight of the etching composition.

7. The etchant composition of the copper-based metal film according to item 1 above, further comprising a phosphate compound.

8. The etching solution composition for a copper-based metal film according to 7 above, wherein said phosphate compound is at least one selected from the group consisting of sodium phosphate, potassium phosphate and ammonium phosphate.

9. The etchant composition of copper-based metal film according to 7 above, wherein the phosphate compound is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.

10. The etching solution composition for a copper-based metal film according to 1 above, further comprising an organic acid not containing a nitrogen atom.

11. The method of claim 10, wherein the organic acid not containing a nitrogen atom is selected from the group consisting of acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, wherein at least one selected from the group consisting of glycolic acid, malonic acid, pentanoic acid and oxalic acid is used.

12. The etchant composition of the copper-based metal film according to item 10 above, wherein the organic acid not containing nitrogen atoms is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.

13. The etching solution composition of the copper-based metal film according to 1 above, which further comprises a water-soluble cyclic amine compound.

14. The composition of claim 13 wherein said water soluble cyclic amine compound is selected from the group consisting of aminotetrazole, imidazole, indole, purine, pyrazole, pyridine, pyrimidine, wherein at least one selected from the group consisting of pyrimidine, pyrrole, pyrrolidine and pyrroline is used.

15. The etchant composition of the copper-based metal film according to 13 above, wherein the water-soluble cyclic amine compound is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.

16. The etchant composition of the copper-based metal film as set forth in the above 1, further comprising a fluorine compound.

17. The composition of claim 16, wherein the fluorinated compound is selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, Wherein the copper-based metal film is at least one selected from the group consisting of potassium bifluoride.

18. The etchant composition of the copper-based metal film according to 16 above, wherein the fluorine-containing compound is contained in an amount of 0.01 to 1% by weight based on the total weight of the etchant composition.

19. The copper-based metal film according to 1 above, wherein the copper-based metal film comprises a single film of copper or a copper alloy, a copper molybdenum film including a molybdenum layer and a copper layer formed on the molybdenum layer, a molybdenum alloy layer, A copper molybdenum alloy film or a copper oxide film including a metal oxide layer and a copper layer formed on the metal oxide layer.

The present invention can improve the process margin by increasing the number of substrates that can be etched.

The etchant composition of the present invention is excellent in etching uniformity and linearity and can realize a low taper profile when etching a copper-based metal film.

When the copper-based metal film is etched with the etchant composition according to the present invention, residues are not generated and problems such as electrical shorts, poor wiring, and reduced brightness are not caused.

The etching solution composition of the present invention can collectively etch the gate wiring and the source / drain wiring at the time of manufacturing the array substrate for a liquid crystal display, thereby simplifying the etching process and maximizing the process yield.

When an etchant composition according to the present invention is used for etching a copper or copper alloy wiring having a low resistance, an environmentally friendly liquid crystal display array substrate can be manufactured in addition to realizing a large-sized circuit and a high-brightness circuit.

The present invention relates to an etching solution composition of a copper-based metal film which can improve the process margin by increasing the number of substrates which can be etched by including hydrogen peroxide, a water-soluble compound represented by the general formula (1) and water.

Hereinafter, the present invention will be described in detail.

The present invention relates to an etching solution composition of a copper-based metal film containing hydrogen peroxide (H ₂ O ₂ ), a water-soluble compound represented by the general formula (1) and water.

Hydrogen peroxide (H ₂ O ₂ ) is a main oxidizing agent and etches the copper-based metal film.

The content of hydrogen peroxide is not particularly limited within a range that can function as a peroxidizing agent, but may be included in the total weight of the etching composition in an amount of 5 to 25% by weight, and preferably 10 to 20% by weight. If the content of hydrogen peroxide is in the range of 5 wt% or more and 25 wt% or less based on the total weight of the etching solution composition, sufficient etching can be performed at an appropriate etching rate.

The water-soluble compound represented by the general formula (1) is a component capable of obtaining a sufficient process margin even after etching a large amount of substrate (when the copper metal concentration in the etching solution is 4000 ppm or more) and uniformly etching at an appropriate rate.

 [Chemical Formula 1]

Wherein R ₁ and R ₂ are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms and R ₃ is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms.

The water-soluble compound represented by the general formula (1) is not particularly limited and includes, for example, sulfamic acid, N-methylsulfamic acid, N-ethylsulfamic acid, N-propylsulfamic acid, N, , N-ethylmethylsulfamic acid, N, N-methylpropylsulfamic acid, N, N-diethylsulfamic acid, N, N-ethylpropylsulfamic acid, , Ethanesulfonamide, propanesulfonamide, N-methylmethanesulfonamide, N-methylethanesulfonamide, N-methylpropanesulfonamide, N-ethylmethanesulfonamide, N- ethylethanesulfonamide, N- , N, N-dimethylmethanesulfonamide, N, N-dimethylethanesulfonamide, N, N-dimethylpropanesulfonamide, N-ethylmethylpropane sulfonamide, N, N-methylpropylmethanesulfonamide, N, N-methylpropyl N, N-diethylpropane sulfonamide, N, N-diethyl propane sulfonamide, N, N-dimethyl propane sulfonamide, N, Methanesulfonamide, N, N-diethylethanesulfonamide, N, N-diethylpropanesulfonamide, N, N-dipropyltrimethanesulfonamide, N, Propyl propane sulfonamide, and the like, preferably N-methyl sulfamic acid. These may be used alone or in combination of two or more.

The content of the water-soluble compound represented by the formula (1) is not particularly limited within a range that can function, but may be included in the total weight of the etchant composition in an amount of 0.1 to 10% by weight, preferably 3 to 7% have. When the content of the water-soluble compound represented by the formula (1) is 0.1 wt% or more and 10 wt% or less in the total weight of the etching solution composition, the effect of increasing the number of substrates processed can be maximized.

The etching solution composition according to the present invention may further comprise a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule.

The kind of the water-soluble compound having a nitrogen atom and a carboxyl group in one molecule is not particularly limited, and examples thereof include alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, , Sarcosine, and the like. These may be used alone or in combination of two or more.

The content of the water-soluble compound having a nitrogen atom and a carboxyl group in one molecule is not particularly limited within a range that can function, but may be included in an amount of 0.1 to 5 wt%, preferably 1 to 3 wt% % Can be included. When the content of the water-soluble compound having a nitrogen atom and a carboxyl group in one molecule is 0.1 wt% or more and 5 wt% or less in the total weight of the etching solution composition, uniform etching can be performed at an appropriate rate.

The etchant composition according to the present invention may further comprise a phosphate compound.

Phosphate compounds are components that make the taper profile of the pattern good.

The phosphate compound is not particularly limited as long as it is selected from a phosphoric acid in which hydrogen is substituted with one or two salts of an alkali metal or an alkaline earth metal. Examples of the phosphate compound include sodium phosphate, potassium phosphate, ammonium phosphate, And the like. These may be used alone or in combination of two or more.

The content of the phosphate compound is not particularly limited within a range that can function, but may be included in the total weight of the etching composition in an amount of 0.1 to 5% by weight, preferably 1 to 3% by weight. When the content of the phosphate compound is 0.1 wt% or more and 5 wt% or less in the total weight of the etching solution composition, sufficient etching can be performed at an appropriate etching rate without residue, and a good etching profile can be formed.

The etchant composition according to the present invention may further comprise an organic acid not containing a nitrogen atom.

The organic acid which does not contain a nitrogen atom is a component which adjusts the pH appropriately and makes the environment of the etching solution easy to etch the copper metal film.

The type of the organic acid not containing a nitrogen atom is not particularly limited and includes, for example, acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, pentanoic acid, oxalic acid, and the like. These may be used alone or in combination of two or more.

The content of the organic acid not containing a nitrogen atom is not particularly limited within a range that can function, but may be included in the total weight of the etchant composition in an amount of 0.1 to 5 wt%, preferably 1 to 3 wt% . If the content of the organic acid not containing nitrogen atoms is 0.1 wt% or more and 5 wt% or less in the total weight of the etchant composition, adequate etching is performed at an appropriate rate by maintaining an appropriate pH of about 0.5 to 4.5, And the residue can be prevented from being generated.

The etchant composition according to the present invention may further comprise a water-soluble cyclic amine compound.

The water-soluble cyclic amine compound controls the etching rate of the copper-based metal and reduces the seed loss of the pattern to increase the process margin.

The type of the water-soluble cyclic amine compound is not particularly limited, and examples thereof include aminotetrazole, imidazole, indole, purine, pyrazole, pyridine, pyrimidine, pyrimidine, pyrrole, pyrrolidine, pyrroline, and the like. These may be used alone or in combination of two or more.

The content of the water-soluble cyclic amine compound is not particularly limited within a range capable of controlling the etching rate, but it may be included in the total weight of the etching composition in an amount of 0.1 to 5 wt%, preferably 0.5 to 2 wt% have. When the content of the water-soluble cyclic amine compound is 0.1 wt% or more and 5 wt% or less based on the total weight of the etching solution composition, sufficient etching is performed at a proper rate, thereby preventing the increase of the seed loss and the residue.

The etchant composition according to the present invention may further comprise a fluorine compound.

The fluorine compound according to the present invention means a compound capable of dissociating into water and capable of emitting fluorine ions, and is a component for removing residues which are inevitably generated in a solution for simultaneously etching a copper film and a molybdenum film.

The fluorinated compound is not limited as long as it is ordinarily used in the art and can be dissociated into fluoride ion or polyatomic fluoride ion in the solution, and examples thereof include ammonium fluoride, sodium fluoride, potassium fluoride potassium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride, and the like. These may be used alone or in combination of two or more.

The content of the fluorine compound is not particularly limited within a range that can function as a residue, but may be included in the total weight of the etching composition in an amount of 0.01 to 1% by weight, preferably 0.05 to 0.5% by weight. If the content of the fluorine compound is 0.01 wt% or more and 1 wt% or less in the total weight of the etchant composition, sufficient etching can be performed at an appropriate etching rate without residue.

Alternatively, in addition to the above-mentioned components, conventional additives may be further added to the etchant composition of the copper-based metal film of the present invention. Metal ion sequestrants and corrosion inhibitors may be used as additives.

In addition, the additives are not limited thereto, and various other additives known in the art may be selected and added for better effect of the present invention.

The etching solution composition of the copper-based metal film according to the present invention may be prepared by appropriately adapting the above-mentioned components according to specific needs, and then adding water to control the entire composition, so that the remaining amount of the entire composition is occupied by water. Preferably, the components are adjusted to have the aforementioned content ranges.

The kind of water is not particularly limited, but it is preferably deionized distilled water. More preferably, it is deionized distilled water for semiconductor processing and has a resistivity value of 18 M OMEGA. / Cm or more.

In the present invention, the copper-based metal film includes copper as a constituent component of the film, and includes a multilayer film such as a single film and a double film. For example, a single film of copper or a copper alloy, a multilayer film of copper molybdenum, a copper molybdenum alloy film, a copper metal oxide film and the like are included. The copper molybdenum film includes a molybdenum layer and a copper layer formed on the molybdenum layer, and the copper molybdenum alloy film includes a molybdenum alloy layer and a copper layer formed on the molybdenum alloy layer. The molybdenum alloy layer may include one selected from the group consisting of Sn, Ti, Ta, Cr, Ni, Nd, And an alloy of molybdenum.

The copper metal oxide film means a metal oxide layer and a copper layer formed on the metal oxide layer. The metal oxide layer is a layer constituted by containing an oxide of a metal, and the oxide of the metal is not particularly limited. For example, a metal such as Zn, Sn, Cd, Ga, Al, Ber, Mg, Ca, Ba, Rh, Th, Sc, Indium, Y, La, Ac, Titanium, Zr, Hafnium, Hf), tantalum (Ta), and ruthenium (Rf).

The etching solution composition of the copper-based metal film of the present invention comprising the above-mentioned components particularly includes hydrogen peroxide (H ₂ O ₂ ), a water-soluble compound represented by the general formula (1) and water to increase the number of substrates Thereby improving the process margin.

The present invention also provides a method of manufacturing a semiconductor device, comprising: (I) forming a copper-based metal film on a substrate; (II) selectively leaving a photoactive material on the copper-based metal film, and (III) etching the copper-based metal film exposed by the etching solution composition of the present invention.

In the etching method of the present invention, the photoreactive material is preferably a conventional photoresist material, and may be selectively left by conventional exposure and development processes.

The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: a) forming a gate wiring on a substrate; b) forming a gate insulating layer on the substrate including the gate wiring; c) forming a semiconductor layer on the gate insulating layer; d) forming source and drain wirings on the semiconductor layer, and e) forming pixel electrodes connected to the drain wirings.

The step a) includes forming a copper-based metal film on the substrate and etching the copper-based metal film with the etchant composition of the present invention to form a gate wiring.

The step d) includes forming a copper-based metal film and etching the copper-based metal film with the etchant composition of the present invention to form source and drain wirings.

The array substrate for a liquid crystal display may be a thin film transistor (TFT) array substrate.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be illustrative of the present invention and are not intended to limit the scope of the appended claims. It will be apparent to those skilled in the art that such variations and modifications are within the scope of the appended claims.

Example  1-6 and Comparative Example

A residual amount of water was added to the components and composition ratios (% by weight) shown in Table 1 below to prepare an etching solution composition for a copper-based metal film.

division Hydrogen peroxide
(weight%) The water-soluble compound (% by weight) represented by the formula (1) A water-soluble compound having a nitrogen atom and a carboxyl group in one molecule
(weight%) phosphate
(weight%) Organic acids containing no nitrogen atoms
(weight%) The water-soluble cyclic amine compound
(weight%) Fluorine compound
(weight%) Weight portion ingredient Weight portion ingredient Weight portion ingredient Weight portion ingredient Weight portion ingredient Weight portion ingredient Weight portion Example 1 5 A 0.1 B 0.1 C 0.1 D 0.1 E 0.5 F 0.05 Example 2 10 A 3 B 0.5 C 0.5 D 0.5 E 0.5 F 0.1 Example 3 20 A 3 B 2 C One D One E 0.8 F 0.3 Example 4 15 A 5 B 3 C 3 D 3 E One F 0.5 Example 5 25 A 10 B 5 C 5 D 5 E 5 F One Implementation 6 20 A 15 B 2 C One D One E 0.8 F 0.3 Comparative Example 10 - - B 0.5 C 0.5 D 0.5 E 0.5 F 0.1 A: N-methylsulfamic acid, B: iminodiacetic acid,
C: sodium dihydrogenphosphate, D: glycolic acid,
E: Aminotetrazole, F: Ammonium fluoride

Experimental Example

One. Etching profile  evaluation

A copper film was deposited on a glass substrate (100 mm x 100 mm), and then a photoresist having a predetermined pattern was formed on the substrate through a photolithography process.

Then, a Mo-Ti film is deposited on another glass substrate (100 mm × 100 mm), a copper film is deposited on the Mo-Ti film, and a photoresist having a predetermined pattern is formed on the substrate through a photolithography process .

Thereafter, the Cu monolayer and the Cu / Mo-Ti film were etched with the etchant compositions of Examples 1 to 6.

(ETCHER (TFT), manufactured by SEMES Co., Ltd.) was used, and the etching composition was etched for about 100 seconds at a temperature of about 30 캜.

The etching profile was evaluated using an SEM (product of Hitachi, model name: S-4700), and the results are shown in Table 2 below.

<Evaluation Criteria>

Good: Good linearity and excellent taper profile

△: Forms excellent taper profile but does not have good linearity

Ⅹ: Interfacial profile deformation occurs, both the taper profile and the straightness are not good

2. Residue  Evaluation of occurrence

The presence or absence of residue was evaluated using SEM (product name, S-4700, manufactured by Hitachi). The results are shown in Table 2 below.

3. Evaluation of processing quantity

A reference etch test was performed with the etchant compositions of Example 3 and Comparative Example and copper powder was added to the etchant composition at concentrations of 1,000, 2,000, 3,000 and 4,000 ppm, respectively . Thereafter, etching was again performed on the etchant composition, and evaluated according to the following criteria as compared with the reference etch test. The evaluation results are shown in Table 3 below.

<Evaluation Criteria>

Good: Good (less than 10% of lateral etching change)

X: defective (lateral etching change amount exceeding 10%)

division Etching profile Presence or absence of residue Cu single membrane Cu / MoTi Cu single membrane Cu / MoTi Example 1 ○ ○ radish radish Example 2 ○ ○ radish radish Example 3 ○ ○ radish radish Example 4 ○ ○ radish radish Example 5 ○ ○ radish radish Example 6 ○ ○ radish radish

division Evaluation of processing quantity
(Etching Characteristics after Addition of Copper Powder) 1,000ppm 2,000 ppm 3,000 ppm 4000ppm Example 3 ○ ○ ○ ○ Comparative Example ○ ○ × ×

With reference to Table 2, the etchant compositions of the copper-based metal films of Examples 1 to 6 exhibited good linearity and excellent taper profiles in both Cu single layer and Cu / Mo-Ti layer, It was confirmed that the film exhibited excellent etching characteristics during etching.

Referring to Table 3, the etchant composition of Example 3 exhibited a lateral etching change of 10% or less as compared with the reference etch even after the copper powder was added so as to have a concentration of 4,000 ppm. Therefore, It can be confirmed that it does not fall. However, when the concentration of the copper powder is 3,000 ppm or more, the etchant composition of the comparative example deteriorates the etching ability after the treatment of a plurality of substrates because the side etching change amount is more than 10%.

Claims (19)

An etching solution composition of a copper-based metal film comprising hydrogen peroxide, a water-soluble compound represented by the following formula (1) and water:
[Chemical Formula 1]

(Wherein R ₁ and R ₂ are each a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R ₃ is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms).
The water-soluble compound of claim 1, wherein the water-soluble compound represented by Formula 1 is selected from the group consisting of sulfamic acid, N-methylsulfamic acid, N-ethylsulfamic acid, N-propylsulfamic acid, N, N, N-diethylsulfamic acid, N, N-dipropylsulfamic acid, methanesulfonamide, ethanesulfonic acid, Methylpropanesulfonamide, N-ethylmethanesulfonamide, N-ethyl-ethanesulfonamide, N-ethyl-propanesulfonamide, N , N-dimethylmethanesulfonamide, N, N-dimethylethanesulfonamide, N, N-dimethylpropanesulfonamide, N, N-ethylmethylmethanesulfonamide, Ethyl methyl propane sulfonamide, N, N-methyl propyl methane sulfonamide, N, N-methylpropyl ethanesulfonamide N, N-diethylmethanesulfonamide, N, N-diethylmethanesulfonamide, N, N-diethylmethanesulfonamide, N, Amide, N, N-diethylethanesulfonamide, N, N-diethylpropanesulfonamide, N, N-dipropyltrimethanesulfonamide, N, N-dipropylethanesulfonamide and N, And at least one selected from the group consisting of copper sulfide, copper sulfide, zinc sulfide, and sulfone amide.
The etchant composition according to claim 1, wherein the hydrogen peroxide is contained in an amount of 5 to 25% by weight, the water-soluble compound represented by the formula (1) is contained in an amount of 0.1 to 10% by weight and the water is contained in the balance.
The etchant composition of a copper-based metal film according to claim 1, further comprising a water-soluble compound having a nitrogen atom and a carboxyl group in one molecule.
The water-soluble compound according to claim 4, wherein the water-soluble compound having a nitrogen atom and a carboxyl group in the molecule is selected from the group consisting of alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, Wherein the copper-based metal film is at least one selected from the group consisting of sarcosine.
The etchant composition of a copper-based metal film according to claim 4, wherein the water-soluble compound having a nitrogen atom and a carboxyl group in the molecule is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.
The etchant composition of claim 1, further comprising a phosphate compound.
[Claim 7] The etchant composition of claim 7, wherein the phosphate compound is at least one selected from the group consisting of sodium phosphate, potassium phosphate, and ammonium phosphate.
[Claim 7] The etchant composition of claim 7, wherein the phosphate compound is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.
The etchant composition of a copper-based metal film according to claim 1, further comprising an organic acid not containing a nitrogen atom.
[Claim 10] The method according to claim 10, wherein the organic acid containing no nitrogen atom is selected from the group consisting of acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, wherein the at least one element is at least one element selected from the group consisting of iron oxide, malonic acid, pentanoic acid, and oxalic acid.
[Claim 11] The etchant composition according to claim 10, wherein the organic acid containing no nitrogen atom is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.
The etchant composition of a copper-based metal film according to claim 1, further comprising a water-soluble cyclic amine compound.
The method of claim 13, wherein the water soluble cyclic amine compound is selected from the group consisting of aminotetrazole, imidazole, indole, purine, pyrazole, pyridine, pyrimidine, Wherein at least one selected from the group consisting of boron nitride, boron nitride, boron nitride, boron nitride, boron nitride, and boron nitride is at least one selected from the group consisting of boron nitride, pyrrole, pyrrolidine and pyrroline.
[14] The etchant composition of claim 13, wherein the water-soluble cyclic amine compound is contained in an amount of 0.1 to 5% by weight based on the total weight of the etchant composition.
The etchant composition of a copper-based metal film according to claim 1, further comprising a fluorine compound.
16. The method of claim 16, wherein the fluorinated compound is selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, and potassium bifluoride. The copper-based metal film etchant composition of claim 1, wherein the copper-based metal film is at least one selected from the group consisting of potassium bifluoride.
The etchant composition of a copper-based metal film according to claim 16, wherein the fluorine-containing compound is contained in an amount of 0.01 to 1% by weight based on the total weight of the etchant composition.
The copper-based metal film according to claim 1, wherein the copper-based metal film comprises a single film of copper or a copper alloy, a copper molybdenum film including a molybdenum layer and a copper layer formed on the molybdenum layer, a molybdenum alloy layer, and a copper layer formed on the molybdenum alloy layer A copper molybdenum alloy film or a copper oxide film including a metal oxide layer and a copper layer formed on the metal oxide layer.