KR20130142580A - High temperature evaporation source and manufacturing method thereof - Google Patents

Abstract

The present invention is to solve the problems caused by the enlargement of the large-capacity high temperature evaporation source, according to the present invention, by configuring the material melting portion and the evaporation portion in a single chamber using a separate crucible and a separate heater, inconvenience caused by the large capacity The material supply unit was configured in a separate chamber, and the material supply unit was able to supply one or more materials to simultaneously deposit a multicomponent thin film.

Description

High temperature evaporation source and its manufacturing method {HIGH TEMPERATURE EVAPORATION SOURCE AND MANUFACTURING METHOD THEREOF}

The present invention relates to a high temperature evaporation source, and more particularly, to the manufacture of a high temperature evaporation source used when forming a metal electrode or the like on a large area substrate.

Evaporation sources used in the manufacture of OLEDs or thin-film solar cells should satisfy the following.

That is, the evaporation source should be applicable to large area substrates, so that there will be continuous long term operation through the filling of large-capacity materials as much as possible, the reliability of the deposition characteristics will be secured, and the real time through the fast response speed of the evaporation source. It requires characteristics such as control of the deposition rate and easy maintenance.

As a general conventional method of implementing a large-area substrate and long-term usability, a large-capacity crucible and a large-capacity heater are installed (US Publication No. US2007 / 0028629A1, etc.). Increase power consumption, increase warm-up / cool down time by increasing latent heat by using large-capacity materials, slow response speed of deposition rate control by using large-capacity materials, and deposition rate by remaining material Change, installation due to large hardware, maintenance and inconvenience of material refilling.

Therefore, there is a need for improvement of a high temperature evaporation source having long life that is applied to a large area substrate.

An object of the present invention is to provide a high temperature evaporation source having a long-term usability applied to a large-area substrate, to compensate for the above disadvantages.

Accordingly, the present invention, by using a material supply device as a means for supplying a constant and continuous material, by designing a melting portion and evaporation portion having a predetermined size of the crucible and the heating portion is placed at a high speed The metal in the solid state was converted to the gaseous state to provide a uniform evaporation source through the nozzle.

That is, the present invention, in the evaporation source,

A substance supply unit for supplying a substance;

Melting unit for melting the material supplied from the material supply unit;

A material movement passage for transferring the material melted in the melter to an evaporator; And

And an evaporator for evaporating the evaporated material by evaporating the molten material introduced through the material movement passage.

The melting portion and the evaporation portion provides an evaporation source, characterized in that composed of separate crucibles.

In addition, the present invention provides an evaporation source, characterized in that the state of the material is changed to a solid, liquid, gas state while passing through the material supply portion, the melt portion, the evaporation portion.

The present invention also provides an evaporation source in the evaporation source, wherein the melter and the evaporator each use separate heaters.

In addition, the present invention provides an evaporation source characterized in that a baffle is provided at the end of the melting section in the connection passage between the melting section and the evaporation section to prevent backflow of metal vapor and to stably supply molten metal.

In addition, the present invention, in the evaporation source, the molten portion and the evaporation portion provides an evaporation source, characterized in that installed in the same one chamber.

In addition, the present invention, in the evaporation source, the material supply unit provides one or more materials, to provide an evaporation source, characterized in that the multi-component deposition at the same time.

In addition, in the evaporation source, the material supply unit is installed in a separate chamber different from the chamber including the melter and the evaporator so that the vacuum of the chamber including the melter and the evaporator is not destroyed when the material supply is replaced. It is possible to provide an evaporation source characterized in that it only destroys the vacuum of the chamber including the material supply.

According to the present invention, since the melting part for melting the material and the evaporation part for evaporating the material use a separate crucible and a separate heater and are connected through the material movement passage, a large capacity high temperature evaporation source is not required, but a large capacity heater is not required. It can prevent the time delay for preheating and cooling due to the supply of large amount of material, and the change of deposition rate according to the remaining amount of material and the temperature reduction effect of evaporation part due to the material supply are alleviated, and the difficulty of installation and maintenance due to the large hardware Can be.

1 is a cross-sectional view showing the configuration of a high temperature evaporation source according to a preferred embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating the state of materials supplied through the high temperature evaporation source of FIG.
3 is a cross-sectional view showing the application of the high temperature evaporation source of FIG.
4 is a cross-sectional view illustrating a nozzle configuration of a high temperature evaporation source.
5 is a cross-sectional view illustrating a linear evaporation source configuration in which the nozzle of the high temperature evaporation source is linear.
6 is a cross-sectional view showing modified embodiments in which the range included in the main chamber of the high temperature evaporation source is changed.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The high temperature evaporation source of the present invention comprises a material supply unit 100, a melting unit 200, and an evaporation unit 300.

First, the configuration of the material supply unit 100 will be described.

Substances which can be evaporated in the high temperature evaporation source of the present invention include all substances which change state in the order of solid → liquid → gas. The form of the material to be supplied may be in the form of lines, grains, or powder, and FIG. 1 exemplarily shows a case of a linear material. The material supply method has a structure in which the material is continuously supplied by the driving unit 106 that provides power by a motor, an actuator, etc., and the second driving unit 105 composed of the material cartridge 104 and the guide roller while maintaining a constant path. Achieve. The material supply method may be modified in various forms as the case may be, but in the present invention, a chamber 103 including a material supply device and a separate vacuum pump 101 and a first gate valve 102 for the chamber 103 may be used. And a second gate valve 107 formed between the chamber 103 and the melter 200, such that the melter 200 and the evaporator 200 may be maintained during the maintenance and refilling of the material supply unit 100. 300) and the process chamber (main chamber) is completely isolated from each other has the advantage that does not need to stop the entire system or vacuum breaking. In addition, not only one component can be supplied but also various components, that is, multi-component materials can be supplied, and multi-component thin film deposition can be performed.

The melter 200 is configured as follows.

The melter 200 has a vacuum pump 207 and a valve accordingly separate from the material supply unit 100. The material supplied from the material supply unit 100 is supplied to the melter 200 along a predetermined path by the material induction guide 201.

The melter 200 includes a crucible 202 containing a supplied solid material and a liquid in which the solid material is liquefied, a modular heater 203 for liquefying the supplied solid material, and a temperature detector 204 for temperature control. do.

The interior of the melting crucible 202 includes a baffle 205 and a moving passage 206 which allow a certain amount of liquid metal to be transferred to the evaporator 300 when the liquid metal is liquefied over a predetermined level. The inside of the melting crucible 202 is coated to lower the wetting angle of the molten liquid so as to have a low surface tension with respect to the moving path connected to the baffle 205 and the moving passage 206. The baffle 205 has a function to continuously move a certain amount by the pressure difference of the molten metal when the liquid metal moves to the evaporator 300 and the vapor generated from the evaporator 300 is the melter 200 and Backflowing into the material supply unit 100 prevents unwanted deposition into the device and prevents malfunction.

The melting crucible 202 is a refractory metal, and a metal having a high melting point such as molybdenum, tantalum, or tungsten and having little deformation at high temperature and reactivity with a molten material is suitable. Other nonmetals are suitable for high temperature refractory materials such as alumina and zirconia, and boron nitride (BN: PBN) and quartz may be used as the crucible material.

The exothermic heater 203 is composed of at least one heater in the melting part 200, and can be applied according to the melting point of the molten material. As the metal heater, materials such as Ni-Cr alloy, Mo, Ta, and W are suitable. As the non-metallic material, SiC and graphite or IR lamps are applicable. The shape of the heating heater 203 is induction using a wire type bent line, hair pin type strip type, rod type resistance heating type heater as well as induction induction type according to the manufacturing method. Heaters can also be used. The control of the exothermic heater may be applied to a high temperature type thermocouple, resistance temperature detector (RTD), an optical type temperature gauge, and the like. It is preferable to arrange a reflector or a heat insulating material (not shown) outside the heater. The reflector or insulation is preferably made of high temperature refractory metal (Mo, Ta, W, etc.) or carbon (graphite) fibers.

Next, the configuration of the evaporator 300 will be described.

The evaporator 300 shares a chamber including the melter 200 with a vacuum pump and a valve 207 therefor. The liquid substance supplied from the melting crucible 202 is evaporated through the movement path 206. Supplied to 212.

The evaporation crucible 212 includes a modular heater 208 for vaporizing a liquid substance and a temperature detector 211 for temperature control, and are contained in a mixture of a liquid substance and a gaseous substance. The evaporation crucible 212 has a function of converting the vapor state by vaporizing it by the presence of a part of the liquid state, and typically, the evaporation crucible 212 operates at a higher temperature than the melting crucible 202.

The inside of the evaporation crucible 212 is coated with a material having a large wet angle so as not to deposit a gaseous substance to prevent condensation in a sealed device such as the material movement passages 206 and 210.

The baffle 209 prevents the liquid substance from flowing into the nozzle unit 300 by a spitting phenomenon due to a sudden increase in temperature of the liquid substance present in the lower portion of the evaporation crucible 212.

The evaporation crucible 212 is a refractory metal, and a metal having a high melting point such as molybdenum, tantalum, or tungsten, and having little deformation and reactivity with a molten material at a high temperature is suitable. Other nonmetals are suitable for high temperature refractory materials such as alumina and zirconia, and boron nitride (BN: BNP) and quartz may be used as the crucible material.

At least one heating heater 208 is installed in the evaporator 300, and can be applied according to the melting point of the molten material, and high-temperature heating materials such as Ni-Cr alloy, Mo, Ta, and W are suitable as the metal heater. In addition, as the non-metallic material, SiC and graphite or IR lamps can be applied. The shape of the heating heater 208 is induction using an induction induction method as well as a wire type bent line, hair pin type strip type, rod type resistance heating type heater, and the like according to the manufacturing method. Heaters can also be used. It is preferable to arrange a reflector or a heat insulating material (not shown) outside the heater. The reflector or insulation is preferably made of high temperature refractory metal (Mo, Ta, W, etc.) or carbon (graphite) fibers.

Control of the exothermic heater by the temperature detector 211 may be applied to a high-temperature thermocouple, resistance temperature detector (RTD), an optical type temperature gauge, and the like.

Next, the nozzle unit will be described.

The nozzle unit distributes and sprays a substance in a vapor state moved through the movement path 210.

In addition, the nozzle unit may be configured as a point evaporation nozzle or a linear evaporation nozzle according to the form or function of the substrate. In the case of the point evaporation nozzle, it can be applied in a shape that can control the evaporation distribution as shown in Figure 5, the linear evaporation nozzle can also be configured in various shapes as shown in Figure 6 the nozzle distribution and shape. In addition, all of these may take a top-down, side-down, bottom-up configuration, and by configuring a separate nozzle heater in the nozzle unit can enhance the evaporation efficiency.

On the other hand, the control of the deposition material collects the deposition rate information in the thin film thickness measuring apparatus 301, and then controls the deposition rate through the temperature change of the evaporation heater, the temperature change of the melting heater, the material feed rate of the material supply device. In the existing direct supply method, when the new material is added, there is a decrease in evaporation rate due to a rapid temperature decrease. However, the present invention supplies the material to the melting part 200 and has a new evaporation part 300 having a separate chamber. There is almost no change in temperature and evaporation rate even when the material is injected.

On the other hand, the process chamber of the present invention may be manufactured in a range covering the nozzle unit as shown in Figure 1, it is apparent to those skilled in the art that the range can be adjusted in a manner that covers both the evaporation unit and the molten unit.

In addition, the material supply unit may attempt to mix the materials by installing one or more, or even increase the supply speed of the same material.

100: material supply
200: melting part
300: evaporation unit
101, 207: vacuum pump 102: first gate valve
103: chamber 104: material cartridge
105: second driver 106: driver
107: second gate valve
201: Guide for introducing substances 202: Crucible
203, 208: heaters 204, 211: temperature detector
205, 209: baffle 206, 210: movement passage
212: evaporation crucible
301: thin film thickness measuring apparatus 302: substrate
303: nozzle

Claims (8)

In the evaporation source,
A substance supply unit for supplying a substance;
Melting unit for melting the material supplied from the material supply unit;
A material movement passage for transferring the material melted in the melter to an evaporator; And
And an evaporator for evaporating the evaporated material by evaporating the molten material introduced through the material movement passage.
The evaporation source, characterized in that the melting portion and the evaporation portion is composed of a separate crucible. The evaporation source of claim 1, wherein the state of the substance is changed into a solid, liquid, and gas state while passing through the substance supply unit, the melting unit, and the evaporation unit. The evaporation source of claim 1, wherein the melter and the evaporator each use separate heaters. The evaporation source according to claim 1, wherein a baffle is provided at the end of the melting section in the connection passage between the melting section and the evaporation section to prevent backflow of the metal vapor and to stably supply the molten metal. The evaporation source according to claim 1 or 4, wherein the melting part and the evaporation part are installed in the same one chamber. The evaporation source of claim 1, wherein the material supply unit supplies one or more materials to simultaneously perform multicomponent deposition. The evaporation source of claim 5, wherein the material supply unit supplies one or more materials to simultaneously perform multi-component deposition. The material supply part of claim 6, wherein the material supply part is installed in a separate chamber from the chamber including the melting part and the evaporation part so that the vacuum of the chamber including the melting part and the evaporation part does not break when the material supply part is replaced. An evaporation source characterized by breaking only the vacuum of the chamber.

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