KR20130125871A - Flip-chip type light emitting device comprising magnetic layer and method for fabricating the same - Google Patents

Abstract

Provided is a flip chip type light emitting device having a magnetic layer and a method of manufacturing the same. A flip chip type light emitting device includes: a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially disposed on a light transmissive substrate; First and second electrodes disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And a magnetic layer disposed on the second electrode, and has a structure in which light emitted from the active layer is emitted through the light transmissive substrate by a current injected directly into the first electrode and the second electrode. According to this, the recombination efficiency of electrons and holes in the active layer can be improved, and the current applied from the outside is injected directly into the electrode without passing through the magnetic layer, thereby preventing deterioration of ohmic characteristics due to magnetic resistance and reducing the series resistance of the device. You can.

Description

Flip-chip type light emitting device comprising a magnetic layer and a method of manufacturing the same {Flip-chip type light emitting device comprising magnetic layer and method for fabricating the same}

The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a flip chip type light emitting device having a magnetic layer for applying a magnetic field into the active layer and a method of manufacturing the same.

A light emitting device emits light by an externally applied current using characteristics of a pn junction semiconductor, and is based on advantages such as low power consumption, long life, small size, light weight, and eco-friendliness. It is attracting attention as an ideal light emitting source for lighting.

Such a light emitting device is generally manufactured by forming a multilayer thin film material layer (including a doped semiconductor layer and an active layer) in a direction perpendicular to the substrate using a deposition process such as organometallic chemical vapor deposition. In addition, the direction of the current applied in the device has a direction perpendicular to the substrate, such as the crystal axis (001) direction of the thin film material. However, in this case, since the mobility of holes is relatively lower than that of electrons, effective recombination of electrons and holes is not performed in the active layer, and as a result, light efficiency of the light emitting device is limited.

In an effort to solve such a problem, efforts have been made to insert an electron blocking layer (EBL) into the light emitting device or to improve internal quantum efficiency using surface plasmon resonance. However, there is a need to effectively increase the internal quantum efficiency of the light emitting device at a simpler and lower cost than these methods.

Korean Patent Publication No. 10-2010-0092116

The technical problem to be solved by the present invention is to provide a flip-chip type light emitting device having improved luminous efficiency having a magnetic layer in the device and a method of manufacturing the same.

In order to solve the above technical problem, an aspect of the present invention provides a flip chip type light emitting device having a magnetic layer.

The light emitting device is a light transmissive substrate; A first conductivity type semiconductor layer disposed on the light transmissive substrate; An active layer and a second conductive semiconductor layer sequentially disposed to expose a portion of the first conductive semiconductor layer on the first conductive semiconductor layer; First and second electrodes disposed on the exposed portion of the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And a magnetic layer disposed to expose a portion of the second electrode on the second electrode, wherein light emitted from the active layer by the current injected directly into the first electrode and the second electrode receives the light-transmitting substrate. It has a structure that is emitted through.

The second electrode may be exposed through a contact hole formed in the magnetic layer. The second electrode may be a reflective ohmic electrode, and may include at least one metal of Ag, Al, Rh, and two or more alloys thereof.

The magnetic layer may have a magnetization direction perpendicular to or horizontal to the light transmissive substrate, and may include at least one ferromagnetic material among Co, Fe, Ni, Nd, and two or more alloys thereof.

The first and second electrodes may be electrically connected to the submount substrate by first and second conductive bumps, respectively.

Meanwhile, at least one of the first conductive semiconductor layer and the second conductive semiconductor layer may include a magnetic material, and the magnetic material may have a magnetization direction perpendicular or horizontal to the substrate.

In order to solve the above technical problem, another aspect of the present invention provides a method of manufacturing a flip chip type light emitting device having a magnetic layer.

The method includes forming a first conductivity type semiconductor layer on a light transmissive substrate; Sequentially forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer to expose a portion of the first conductive semiconductor layer; Forming a first electrode and a second electrode on the exposed portion of the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And forming a magnetic layer on the second electrode such that a portion of the second electrode is exposed.

The forming of the magnetic layer may include depositing a magnetic thin film on the second electrode to cover the top surface of the second electrode, and then forming a contact hole in the magnetic thin film. The step can be performed by wet etching.

In addition, the forming of the magnetic layer may include magnetizing heat treatment of the magnetic layer by applying an external magnetic field in a vertical or horizontal direction to the translucent substrate.

Meanwhile, the method may further include adding a magnetic material in the step of forming at least one of the first conductive semiconductor layer and the second conductive semiconductor layer.

According to the present invention as described above, by forming a magnetic layer on the electrode of the light emitting device it is possible to improve the recombination efficiency of electrons and holes in the active layer. In addition, since the current applied from the outside is directly injected into the electrode without passing through the magnetic layer, it is possible to prevent deterioration of the ohmic characteristics due to the magnetic resistance and to reduce the series resistance of the device. In addition, there is an advantage in that the conductive bumps used for flip chip bonding can be easily formed using the contact holes formed in the magnetic layer.

However, the effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1A through 1D are cross-sectional views illustrating a method of manufacturing a flip chip light emitting device according to an exemplary embodiment of the present invention.
2A and 2B are cross-sectional views illustrating a process of forming a contact hole in a magnetic layer.
FIG. 3 schematically illustrates a movement path of electrons e and holes h when a magnetic field B is applied to the light emitting structure.
4 is a cross-sectional view schematically illustrating a flip chip type light emitting device according to the present invention mounted on a submount substrate on which a conductive pad is formed.
5 is a graph showing light output characteristics of light emitting devices manufactured according to Experimental Example 1, Comparative Example 1 and Comparative Example 2. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It is to be understood, however, that the present invention is not limited to the embodiments described herein but may be embodied in other forms and includes all equivalents and alternatives falling within the spirit and scope of the present invention.

When a layer is referred to herein as being "on" another layer or substrate, it may be formed directly on another layer or substrate, or a third layer may be interposed therebetween. In the present specification, directional expressions of the upper side, upper side, upper side, and the like can be understood as meaning lower, lower, lower, and the like according to the standard. That is, the expression of the spatial direction should be understood as a relative direction and should not be construed as limiting the absolute direction. Also, it is to be understood that the terms “first”, “second” or “third” are used to distinguish between elements, rather than to impose any limitation on the elements.

In the drawings, the thicknesses of the layers and regions may be exaggerated or reduced for clarity. Like numbers refer to like elements throughout.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1A through 1D are cross-sectional views illustrating a method of manufacturing a flip chip light emitting device according to an exemplary embodiment of the present invention.

Referring to FIG. 1A, the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 are sequentially formed on the light transmissive substrate 100.

The light transmissive substrate 100 is a structure that serves as a basis for manufacturing a light emitting device or supporting a manufactured light emitting device, and may be made of a material capable of transmitting light in at least the visible light region. The light transmissive substrate 100 may be a sapphire substrate, a ZnO substrate, a GaN substrate, a SiC substrate, a LiAl ₂ O ₃ substrate, or the like, and preferably a sapphire substrate.

The first conductivity type semiconductor layer 110 and the second conductivity type semiconductor layer 130 may be a group III-V compound semiconductor or a group II-VI compound semiconductor doped with p-type and n-type (or vice versa), respectively. It may include. The III-V compound semiconductor may be formed of GaN, Al _x Ga _{1 - x} N (0 ≦ x ≦ 1) or Al _x In _y Ga _z N (x + y + z = 1, 0 ≦ x, y, z ≦ 1 ), And the group II-VI compound semiconductor may be ZnO or Mg _x Zn _y Cd _Z O (x + y + z = 1, 0 ≦ x, y, z ≦ 1). However, the present invention is not limited thereto.

On the other hand, when epitaxial growth of the first conductivity-type semiconductor layer 110 on the light transmissive substrate 100, according to the difference in the lattice constant of the light-transmissive substrate 100 and the first conductivity-type semiconductor layer 110 In order to minimize the lattice mismatch, the buffer layer (not shown) may be first grown before the first conductivity-type semiconductor layer 110 is grown. For example, when the p-type GaN layer is formed of the first conductive semiconductor layer 110 on the sapphire substrate, which is the light transmissive substrate 100, an undoped GaN layer is formed between the sapphire substrate and the p-type GaN layer. It can be formed to a predetermined thickness to reduce the defect density.

The active layer 120 is a region where light is generated by combining electrons and holes injected from the first and second conductivity-type semiconductor layers 110 and 130, and may include a quantum dot structure or a multiple quantum well. well, MQW) structure. When the active layer 120 has a multi-quantum well structure, the well layer and the barrier layer may include InGaN and GaN, respectively. However, the present invention is not limited thereto, and various materials may be used according to the emission wavelength required.

The conductive semiconductor layers 110 and 130 and the active layer 120 have various known deposition and growth methods such as organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydride vapor deposition (HVPE). It can be formed using.

In the present exemplary embodiment, the active layer 120 and the second conductive semiconductor layer 130 are formed to expose a portion of the first conductive semiconductor layer 110 on the first conductive semiconductor layer 110. For example, after the active layer 120 and the second conductive semiconductor layer 130 are sequentially grown on the first conductive semiconductor layer 110, the second conductive semiconductor layer 130 and the active layer 120 are sequentially grown. Mesa etching may be used to expose a portion of the first conductivity-type semiconductor layer 110. In this case, in order to reliably expose the first conductive semiconductor layer 110, the first conductive semiconductor layer 110 may be further etched.

Referring to FIG. 1B, a second electrode 150 is formed on the second conductive semiconductor layer 130. The second electrode 150 may be formed of a material having high reflectance while forming ohmic contact with the second conductivity-type semiconductor layer 130. By forming the second electrode 150 as a reflective ohmic electrode, injection of current can be facilitated, and light generated in the active layer 120 can be reflected toward the light transmissive substrate 100, thereby improving light extraction efficiency. You can.

The second electrode 150 may include, for example, at least one metal of Ni, Ag, Au, Al, Rh, and two or more alloys thereof. In addition, the second electrode 150 may have a multilayer structure in which each layer includes a different material or composition. For example, the second electrode 150 may be a reflective ohmic electrode including a structure in which Ni / Ag is sequentially stacked.

The magnetic layer 200 is formed on the second electrode 150 to expose a portion of the second electrode 150. The magnetic layer 200 is formed in a thin film form having a width smaller than the second electrode 150 (length measured in a direction parallel to the transparent substrate 100) to expose a portion of the second electrode 150, As illustrated in FIG. 1C, a portion of the second electrode 150 may be exposed through the contact hole H formed in the magnetic layer 200. In the present exemplary embodiment, the contact hole H is formed in the magnetic layer 200.

As shown in FIGS. 2A and 2B, the contact hole H is formed by forming a contact hole mask M on the magnetic thin film 200 ′ using photoresist and photolithography (see FIG. 2A). The magnetic thin film 200 'may be etched through the mask M (see FIG. 2B). The etching of the magnetic thin film 200 ′ may be performed using a wet or dry etching method, and preferably, wet etching may be used.

The second electrode 150 is electrically connected to an external terminal through the contact hole H. Specifically, as described later, the second electrode 150 is electrically connected to the submount substrate through the conductive bumps formed in the contact holes H. Therefore, the contact hole H provided in the magnetic layer 200 may provide a region in which the conductive bumps are formed, and may prevent diffusion of the bump material, thereby improving process ease and stability.

However, the magnetic layer 200 is not limited to the above-described structure, and the magnetic layer 200 is not excluded from being formed in another structure if it is possible to expose a part of the second electrode 150 located below.

When a magnetic field is applied to the device on which the magnetic layer 200 is formed, the electrical resistance of the material layers constituting the device may change due to magnetoresistence. As a result, the ohmic characteristics may be deteriorated, and thus, when an external current is injected into the device via the magnetic layer 200, a problem of reducing the injection efficiency of the carrier (electron or hole) may occur.

However, according to the present exemplary embodiment, the portion of the second electrode 150 exposed to a predetermined size is electrically connected to an external circuit, and the current applied from the outside is directly injected into the device without passing through the magnetic layer 200. The characteristic deterioration by a magnetoresistance can be prevented. This can reduce the series resistance between the magnetic layer 200 and the second electrode 150 can further improve the electrical characteristics of the light emitting device.

The magnetic layer 200 may include, but is not limited to, at least one ferromagnetic material of Co, Fe, Ni, Nd, or two or more alloys thereof. In addition, the magnetic layer 200 may have a multi-layered structure including at least one ferromagnetic material. For example, the magnetic layer 200 may have a structure in which Ni / Co are sequentially stacked.

In addition, another functional layer (not shown) may be further included as a single layer or a multilayer structure between the second electrode 150 and the magnetic layer 200. The functional layer may be an adhesive layer for easy adhesion between the second electrode 150 and the magnetic layer 200. In addition, the functional layer may be an etch stop layer for preventing damage to the second electrode 150 disposed below the wet layer in the process of wet etching the magnetic layer 200. The adhesive layer may include Ni, Ti, or Ta, and the etch stop layer may include Au. However, it is not limited thereto.

On the other hand, the magnetic layer 200 may be aligned so that the magnetization direction has a uniform direction. The magnetization direction may be a direction perpendicular to the light transmissive substrate 100, a horizontal direction, or a direction having a predetermined angle, and preferably, a direction perpendicular or horizontal to the light transmissive substrate 100. The magnetization direction of the magnetic layer 200 may be formed by magnetizing heat treatment of the magnetic layer 200 under predetermined conditions. For example, after the magnetic layer 200 is formed on the second electrode 150, the magnetic layer 200 is magnetized in a state in which an external magnetic field is applied in a direction perpendicular (or horizontal) to the translucent substrate 100. By the heat treatment, the magnetization direction of the magnetic layer 200 can be aligned vertically (or horizontally) with the light transmissive substrate 100. The heat treatment temperature may be from room temperature to 430 ℃, preferably 100 ℃ to 360 ℃.

Meanwhile, the magnetization heat treatment may be performed integrally in the process of forming the magnetic layer 200 as well as after forming the magnetic layer 200. That is, when an external magnetic field is applied in the process of depositing a magnetic material on the second electrode 150, the magnetization direction of the magnetic layer 200 may be aligned with the direction in which the external magnetic field is applied simultaneously with the formation of the magnetic layer 200. have.

When a magnetic field is applied to the light-transmitting substrate 100 in, for example, a vertical direction ([001] direction), electrons and holes injected into the device are subjected to a Lorentz force, so that carriers (electrons or The movement path of the hole) is localized in a direction parallel to the light transmissive substrate 100. 3 is a schematic diagram illustrating a movement path of electrons e and holes h when a magnetic field B is applied to a light emitting structure including an n-type semiconductor layer 310, an active layer 320, and a p-type semiconductor layer 330. It is shown as. As shown in FIG. 3, when the magnetic field B is applied in a direction perpendicular to the light emitting structure, it can be seen that the traveling path of the carriers (electrons and holes) in the active layer 320 is long due to the Lorentz force. This increases the probability that carriers exist in the active layer 3200, so that more electrons e and holes h may be combined in the active layer 320. Therefore, the electron (e) and the hole (h) can effectively participate in the recombination light emission (L), the light efficiency can be improved.

Referring to FIG. 1D, the first electrode 140 is formed on the exposed portion of the first conductivity type semiconductor layer 110. The first electrode 140 may be made of a metal forming ohmic contact with the first conductivity-type semiconductor layer 110. For example, the first electrode 140 may include a structure in which Cr / Au is sequentially stacked. However, it is not limited thereto.

In the present embodiment, the first electrode 140 is formed after forming the second electrode 150 and the magnetic layer 140, but the order may be variously changed for convenience of the process. For example, the first electrode 140 may be formed before the second electrode 150 or the first electrode 140 may be formed after the second electrode 150 is formed but before the magnetic layer 200 is formed. have. Thus, in the present invention, unless one layer is structurally associated with another layer, the order of manufacturing each layer may be arbitrarily changed and is not limited to a specific manufacturing order.

The electrodes 140 and 150 and the magnetic layer 200 may be formed by e-beam evaporation, sputtering, thermal evaporation, pulsed laser deposition, and laser molecular beam deposition. It can be formed through various known deposition methods such as laser molecular beam epitaxy.

In addition, in the light emitting device illustrated in FIG. 1D, at least one of the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 may be a magnetic semiconductor layer including a magnetic material. That is, the magnetic material may be included in any one or both of the first and second conductivity-type semiconductor layers 110 and 130 as well as the magnetic layer 200. In this case, the magnetic material included in the conductive semiconductor layers 110 and 130 may be the same as or different from the magnetic material included in the magnetic layer 200.

The magnetic material may be added in forming the conductive semiconductor layers 110 and 130. For example, when the n-type semiconductor layer is formed of a magnetic semiconductor layer, a thin magnetic semiconductor having magnetic properties may be formed by adding a magnetic material together with an n-type dopant in the process of forming the n-type semiconductor layer ( dilute magnetic semiconduntor (DMS) layer.

In addition, as in the case of the magnetic layer 200, the magnetic semiconductor layer may be aligned to have a predetermined magnetization direction on the transparent substrate 100 through magnetization heat treatment. The magnetization direction of the magnetic semiconductor layer may be the same as or different from the magnetization direction of the magnetic layer 200. However, preferably, the magnetic semiconductor layer may have the same magnetization direction as that of the magnetic layer 200, and more preferably, both the magnetic semiconductor layer and the magnetic layer 200 may have a magnetization direction perpendicular or horizontal to the light transmissive substrate 100. Can be.

4 is a schematic cross-sectional view of a light emitting device mounted on a submount substrate on which conductive pads are formed.

Referring to FIG. 4, in the light emitting device of the present invention, the first conductive semiconductor layer 110, the active layer 120, the second conductive semiconductor layer 130, and the second electrode are sequentially disposed on the light transmissive substrate 100. The first electrode 140 is disposed on the portion of the first conductivity-type semiconductor layer 110 including the 150 and the magnetic layer 200 and exposed by the mesa structure.

The light emitting device is coupled to the submount substrate 400 by flip chip bonding. Specifically, the first and second electrodes 140 and 150 are connected to each other by the first and second conductive bumps 160 and 170. It is electrically connected to the conductive pads 420 and 430 of the submount substrate 400, respectively.

The conductive bumps 160 and 170 may include Pb, Sn, Cu, Zn, Au, Ag, Ni, Ti, and two or more alloys thereof. The submount substrate 400 may use a semiconductor substrate such as Si and SiC, an insulator substrate such as AlN, or a metal substrate, and is preferably made of a material having excellent heat dissipation characteristics. The conductive pads 420 and 430 may include Cu, Al, Ag, W, Pt, Ti, Zn, Ni, and two or more alloys thereof, and may have a multilayer structure made of different materials.

As shown in FIG. 4, the second conductive bumps 170 are in contact with the second electrode 150 through contact holes provided in the magnetic layer 200. In this case, the magnetic layer 200 may provide a structural space in which the second conductive bumps 170 are formed, and may prevent diffusion of the bump material.

Currents applied from the conductive pads 420 and 430 are injected into the first and second conductive semiconductor layers 110 and 150 through the first and second conductive bumps 160 and 170, respectively, and the active layer 130. In, light emission is caused by recombination of electrons and holes. In this process, at least the magnetic field formed by the magnetic layer 200 changes so that the movement path of electrons and holes in the device is lengthened by the force of Lorentz, thereby substantially increasing the probability that electrons and holes exist in the active layer 130. To improve the efficiency of light recombination. The generated light is emitted through the light transmissive substrate 100, and heat generated in the device may be transmitted through the conductive bumps 160 and 170 to be emitted from the submount substrate 400.

Hereinafter, preferred examples for the understanding of the present invention will be described. It should be understood, however, that the following examples are intended to aid in the understanding of the present invention and are not intended to limit the scope of the present invention.

<Experimental Example 1>

1. An undoped GaN layer, an n-GaN layer, a multi-quantum well layer, and a p-GaN layer are sequentially grown on a double-side polished sapphire substrate by organometallic chemical vapor deposition (MOCVD), and then the photo on the p-GaN layer. A mesa pattern is formed using a resist, and a mesa is formed using an ion-bonded plasma (ICP) (etch gas: Cl ₂ / H ₂ / CH ₄ / Ar) until a part of the n-GaN layer is exposed from the p-GaN layer. An etching process was performed.

2. After sequentially depositing Ni / Ag / Ni (5 nm / 120 nm / 2 nm) on the p-GaN layer by using an electron beam deposition method, it was rapidly heat-treated at 500 ° C. for 1 minute in an O ₂ gas flow rate of 50 sccm to reflect a reflective p. -An ohmic electrode was formed.

3. Au / Ni / Co (20 nm / 10 nm / 300 nm) was sequentially deposited on the p-omic electrode to form a magnetic layer. A contact hole mask was formed using a photoresist to expose only a portion of the Co layer, and then placed in a CR-7 etching solution for 4 seconds and then taken out, and then washed with deionized water to form a current contact hole in the magnetic layer. The contact holes were formed through the Ni / Co layer, and the Au layer served as an etch stop layer to stop etching of the CR-7 etching solution.

4. An n-omic electrode was formed by sequentially depositing Cr / Au on the n-GaN layer by using an electron beam deposition method.

5. A light emitting device having a Co layer formed on the magnetization heat treatment furnace was placed, and heated to 180 ° C. at room temperature for 1 hour, then maintained at this temperature for 1 hour, and slowly cooled to room temperature to perform annealing. At this time, the electromagnet was placed outside the heat treatment furnace and magnetized by applying a magnetic field in a direction perpendicular to the gallium nitride (GaN) growth direction (that is, a direction horizontal to the sapphire substrate).

&Lt; Comparative Example 1 &

Except not performing the magnetization heat treatment process, the light emitting device was manufactured by the same process as Experimental Example 1.

Comparative Example 2

A light emitting device was manufactured by the same process as Experimental Example 1, except that annealing was performed while no external magnetic field was applied during the magnetization heat treatment process.

5 is a graph showing light output characteristics of light emitting devices manufactured according to Experimental Example 1, Comparative Example 1 and Comparative Example 2. FIG. Images inserted above and below FIG. 5 are light emission images of Experimental Example 1 and Comparative Example 1, respectively.

Referring to FIG. 5, the case where the magnetization heat treatment is performed does not perform the magnetization heat treatment and when the heat treatment (annealing) is performed alone, the light output is improved by about 13% at 20 mA, and the higher the applied current, the higher the light output. It can be seen that the difference is greater.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Change is possible.

100: translucent substrate 110, 310: first conductive semiconductor layer
120: active layer 130, 330: second conductive semiconductor layer
140: first electrode 150: second electrode
160: first conductive bump 170: second conductive bump
200: magnetic layer 400: submount substrate
410: first conductive pad 420: second conductive pad

Claims (14)

A translucent substrate;
A first conductivity type semiconductor layer disposed on the light transmissive substrate;
An active layer and a second conductive semiconductor layer sequentially disposed to expose a portion of the first conductive semiconductor layer on the first conductive semiconductor layer;
First and second electrodes disposed on the exposed portion of the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And
A magnetic layer disposed on the second electrode such that a portion of the second electrode is exposed;
And a light emitted from the active layer by the current injected directly into the first electrode and the second electrode is emitted through the light-transmissive substrate. The method of claim 1,
And the second electrode is exposed through a contact hole formed in the magnetic layer. The method of claim 1,
And the magnetic layer has a magnetization direction perpendicular to or horizontal to the light transmissive substrate. The method of claim 1,
The magnetic layer is a flip chip type light emitting device comprising at least one of a ferromagnetic material of Co, Fe, Ni, Nd and two or more alloys thereof. The method of claim 1,
And the second electrode is a reflective ohmic electrode. The method of claim 5,
The reflective ohmic electrode includes at least one metal of Ag, Al, Rh, and two or more alloys thereof. The method of claim 1,
And the first and second electrodes are electrically connected to the submount substrate by first and second conductive bumps, respectively. The method of claim 1,
And at least one of the first conductive semiconductor layer and the second conductive semiconductor layer includes a magnetic material. 9. The method of claim 8,
And the magnetic material has a magnetization direction perpendicular or horizontal to the substrate. Forming a first conductivity type semiconductor layer on the light transmissive substrate;
Sequentially forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer to expose a portion of the first conductive semiconductor layer;
Forming a first electrode and a second electrode on the exposed portion of the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And
And forming a magnetic layer to expose a portion of the second electrode on the second electrode. The method of claim 10, wherein the forming of the magnetic layer comprises:
And depositing a magnetic thin film on the second electrode to cover the top surface of the second electrode, and forming a contact hole in the magnetic thin film. 12. The method of claim 11,
The forming of the contact hole is a flip chip type light emitting device manufacturing method performed by wet etching. The method of claim 10, wherein the forming of the magnetic layer comprises:
And magnetizing heat treatment of the magnetic layer by applying an external magnetic field in a vertical or horizontal direction to the light transmissive substrate. The method of claim 10,
And adding a magnetic material in the step of forming at least one of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

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