KR20130074420A - Gas injecting device and substrate processing apparatus having the same - Google Patents

Abstract

The present invention relates to a gas injection device capable of improving the uniformity and reliability of a thin film, and a substrate processing device having the same, comprising: a gas injection device for injecting a process gas into a chamber; And a plurality of gas injection holes coupled to at least a center portion of the top lead formed with a top lead, and communicating with at least one of the plurality of gas introduction holes on a lower surface thereof, and a central injection unit and a lower portion of the top lead. A plurality of process gas injection unit is coupled in the circumferential direction along the edge of the injection unit, a plurality of gas injection holes formed in the lower surface in communication with any one of the plurality of gas inlet, the central injection unit in the lateral direction At least one side nozzle for injecting gas is formed to suppress unwanted gas phase chemical reactions It decreases, it is possible to improve the quality of the thin film.

Description

Gas injecting device and Substrate processing apparatus having the same

The present invention relates to a gas injection device and a substrate processing apparatus having the same, and more particularly, to a gas injection apparatus and a substrate processing apparatus having the same that can improve the uniformity and reliability of the thin film.

As the scale of the semiconductor device is gradually reduced, the demand for the polar thin film is increasing and the problem of the step coverage becomes increasingly serious as the contact hole size is reduced. Atomic layer deposition (ALD) has been used as a deposition method that can overcome various problems.

The principle of the atomic layer thin film deposition method is briefly described as follows. When the substrate is exposed to the first raw material gas supplied into the chamber, the first raw material gas is chemically adsorbed on the surface of the substrate through reaction with the surface of the substrate to form a monoatomic layer. However, when the surface of the substrate is saturated with the first raw material gas, the first raw material gas of the monoatomic layer or more is in a physical adsorption state without forming a chemisorption state due to non-reactivity between the same ligands. Thereafter, when the substrate is exposed to the purge gas, the first raw material gas in the physical adsorption state existing on the substrate is removed by the purge gas. Subsequently, when the substrate is exposed to the second raw material gas, the second raw material gas reacts with the ligands of the first raw material gas chemisorbed on the surface of the substrate to form a second layer, and the second layer does not react with the first layer. The raw material gas is in the physical adsorption state, and is removed by the purge gas when the substrate is exposed to the purge gas again. And the surface of this second layer is in a state capable of reacting with the first raw material gas. The above process forms one cycle and several cycles are repeated until a thin film of a desired thickness is formed on the substrate.

1 is a schematic cross-sectional view of a conventional substrate processing apparatus, and FIG. 2 is a bottom view of the gas injection apparatus of FIG.

Referring to FIG. 1, the substrate treating apparatus includes a chamber 10 having a space 12 formed therein, and a substrate supporting part rotatably installed inside the chamber 10 and on which a plurality of substrates S are seated. 20). In addition, a gas injection device 30 for supplying a gas toward the substrate S is provided above the chamber 10.

The gas injection device 30 includes a plurality of gas injection units as shown in FIG. 2. In more detail, the configuration of the gas injection device 30, the central injection unit 34 having a plurality of gas injection holes are coupled to the lower center of the top lid 32, the central injection unit below the top lid 32 A plurality of process gas injection units 36 formed in a shape similar to a fan shape along the circumferential direction of 34 and having a plurality of gas injection holes are combined. In addition, a plurality of gas injection holes 31 are formed in the top lead 32, and each gas injection hole 31 communicates with each gas injection hole.

The substrate support unit 20 is installed to be elevated and rotated in the chamber 10 so that the plurality of substrates S may be sequentially supplied with gas injected from each injection unit during thin film deposition. For example, the substrate S is supplied with a first raw material gas at a time point at which the process is started, and a thin film is deposited by sequentially receiving a purge gas, a second raw material gas, and a purge gas.

On the other hand, in the substrate processing apparatus configured as described above, since each injection unit is coupled to the bottom of the top lead in an assembly manner, a space is formed between the injection units due to assembly tolerances. However, when the gas is injected onto the substrate support in the process of forming the thin film, a phenomenon in which the gas injected into the space formed between the injection units is introduced by the pressure difference. The gas introduced into the space causes a gas phase chemical reaction on the substrate support to form an unwanted thin film on the substrate. In addition, the gas introduced into the space causes gas phase chemical reactions to generate particles in the space, and the particles fall on the substrate, thereby degrading the quality of the thin film. In addition, the particles thus produced are stacked in the space and contaminate the gas spraying, which makes the maintenance difficult.

KR 2006-0076714 A1

The present invention provides a gas injection apparatus capable of improving the deposition uniformity of a thin film and a substrate processing apparatus having the same.

The present invention provides a gas injection device for facilitating maintenance of equipment and a substrate treating apparatus having the same.

The present invention provides a gas injection apparatus and a substrate treating apparatus having the same that can improve process efficiency and productivity.

A gas injection device according to an embodiment of the present invention is a gas injection device for injecting a process gas into a chamber, and is coupled to a top lead formed with a plurality of gas inlets through which the process gas is supplied, and a lower center portion of the top lead. And a plurality of gas injection holes communicating with at least one of the plurality of gas inlets on a lower surface thereof in a circumferential direction along the edge of the central injection unit with a central injection unit and a lower portion of the top lead, And a plurality of process gas injection units having a plurality of gas injection holes communicating with any one of the plurality of gas introduction holes, wherein the central injection unit has at least one side injection hole for injecting gas in a lateral direction. do.

The central injection unit may be formed in a hollow cylindrical shape with an open top, and side injection holes may be formed in the sidewalls.

Here, the central injection unit includes a body having an inner space with an open upper portion, and an outer wall spaced apart from the outer circumferential surface of the side wall of the body and having side injection holes formed therein, wherein the body and the outer wall are connected through a lower surface of the body. An outer space may be formed between the body and the outer wall, and the inner space and the outer space may communicate with different gas inlets.

The side injection hole may be formed corresponding to the connection portion of the plurality of process gas injection unit.

The side injection hole may be formed through the central injection unit, the side injection hole may be formed as a groove portion of the upper opening.

A gas injection device according to an embodiment of the present invention is a gas injection device for injecting a process gas into a chamber, and is coupled to a top lead formed with a plurality of gas inlets through which the process gas is supplied, and a lower center portion of the top lead. And a plurality of gas injection holes communicating with at least one of the plurality of gas inlets on a lower surface thereof in a circumferential direction along an edge of the central injection unit with a central injection unit and a lower portion of the top lead, And a plurality of process gas injection units having a plurality of gas injection holes communicating with any one of the two gas inlet ports, wherein at least one of the plurality of gas inlet ports is disposed between the central injection unit and the plurality of process gas injection units. It is characterized in that it is formed to inject a gas to.

In addition, the substrate processing apparatus according to the embodiment of the present invention includes a chamber in which a space is formed; A substrate support part rotatably installed in the chamber to support a plurality of substrates; And a gas injection device provided on an upper portion of the substrate support part to inject a process gas into the substrate, wherein the gas injection device includes: a top lead formed with a plurality of gas inlets through which the process gas is supplied; A plurality of gas injection holes coupled to the lower center portion and communicating with at least one of the plurality of gas inlet holes on a lower surface thereof are coupled to the central injection unit in a circumferential direction along an edge of the central injection unit to a lower portion of the top lead. And a plurality of process gas injection units having a plurality of gas injection holes communicating with any one of the plurality of gas inlet holes at a lower surface thereof, wherein the central injection unit has at least one side injection hole for injecting gas in a lateral direction. It is characterized by being formed.

The central injection unit may be formed in a hollow cylindrical shape with an open top, and side injection holes may be formed in the sidewalls.

The central injection unit includes a body having an inner space having an open upper portion, and an outer wall spaced apart from the outer circumferential surface of the side wall of the body and having side injection holes formed therein, wherein the body and the outer wall are connected through a lower surface of the body to allow the body to be formed. An outer space is formed between the outer wall and the inner space, and the inner space and the outer space may communicate with different gas inlets.

In addition, the side injection hole may be formed corresponding to the connection portion of the plurality of process gas injection unit.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber in which a space is formed; A substrate support part rotatably installed in the chamber to support a plurality of substrates; And a gas injection device provided on an upper portion of the substrate support part to inject a process gas into the substrate, wherein the gas injection device includes: a top lead formed with a plurality of gas inlets through which the process gas is supplied; Is coupled to the lower center portion, the plurality of gas injection holes in communication with at least one of the plurality of gas inlet on the lower surface is coupled to the circumferential direction along the edge of the central injection unit and the lower portion of the top lead to the central injection unit And a plurality of process gas injection units having a plurality of gas injection holes communicating with any one of the plurality of gas inlet holes on a lower surface thereof, wherein at least one of the plurality of gas inlet holes includes the central injection unit and the plurality of gas injection holes. Characterized in that it is formed to inject a gas between the process gas injection unit.

The gas ejection apparatus and the substrate processing apparatus including the same according to the embodiment of the present invention can suppress or reduce unwanted gas phase chemical reactions and improve the quality of the thin film. By supplying an inert gas into the space generated by the assembly tolerance of the injection unit forming the gas injection value to block the inflow of the process gas into the space it can suppress the generation of particles due to the reaction of the process gas in the space. Therefore, the quality of the formed device can be improved by preventing the quality of the thin film from being deteriorated by the particles generated in the space, and the maintenance of the equipment can be facilitated by preventing the equipment from being contaminated.

1 is a schematic cross-sectional view of a substrate processing apparatus according to the prior art.
2 is a cross-sectional view of the gas injection device shown in FIG.
3 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
4 is a view showing an example of a central injection plate applied to the gas injection device according to an embodiment of the present invention.
5 is a view showing a modification of FIG.
6 is a view showing a gas flow in the gas injection device according to an embodiment of the present invention.
7 is a schematic cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
8 is a view showing a modification of the central injection unit applied to the substrate processing apparatus of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

3 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, Figure 4 is a view showing an example of a central injection plate applied to the gas injection apparatus according to an embodiment of the present invention, Figure 5 is Figure 4 Is a variation of.

Referring to FIG. 3, a substrate processing apparatus according to an exemplary embodiment of the present invention includes a chamber 100, a substrate support 200, and a gas injection device 120.

The chamber 100 includes a main body 110 having an open top, and a top lid 122 installed on the upper part of the main body 110 to be opened and closed. When the top lead 122 is coupled to the upper portion of the main body 110 to close the inside of the main body 110, the space portion 102 in which the processing for the substrate S is performed inside the chamber 100, for example, a deposition process. ) Is formed.

Since the space portion 102 should generally be formed in a vacuum atmosphere, an exhaust port 104 for discharging the gas existing in the space portion 102 is formed at a predetermined position of the chamber 100, and the exhaust port 104 is It is connected to the exhaust pipe 140 connected to the pump (not shown) provided on the outside.

In addition, a through hole 106 is formed in the bottom surface of the main body 102 into which the rotary shaft 210 of the substrate support 200 to be described later is inserted. Gate valves (not shown) are formed on sidewalls of the main body 102 for carrying the substrate S into or out of the chamber 100.

The substrate support part 200 is a structure for supporting the substrate S, and includes a support plate 220 and a rotation shaft 210. The support plate 220 is provided in a horizontal direction in the chamber 100 in a disk shape, the rotating shaft 210 is vertically connected to the bottom of the support plate 220. The rotating shaft 210 is connected to a driving means (not shown) such as a motor outside the through hole 106 to lift and rotate the support plate 220. At this time, by sealing between the rotating shaft 210 and the through hole 106 by using a bellows (not shown) to prevent the vacuum in the chamber 100 is released in the process of depositing a thin film.

In addition, a plurality of substrate seating portions 222 are formed at predetermined intervals on the support plate 220. The substrate mounting part 222 may be formed in a recessed shape so as to prevent detachment of the mounted substrate S when the support plate 220 is rotated for thin film deposition. In addition, a heater (not shown) may be provided below or inside the support plate 220 to heat the substrate S to a constant process temperature.

The gas injector 120 is spaced apart from the upper portion of the substrate support 200, and injects process gases such as source gas S, reaction gas R, and purge gas P toward the substrate support 200.

Gas injection device 120 is coupled to the central injection unit 131 is coupled to the lower center of the top lead 122, the lower portion of the top lead 122 is coupled along the circumferential direction of the central injection unit 131 different types It includes a plurality of process gas injection unit 126 for injecting the gas. The central injection unit 131 is formed in a hollow cylindrical shape of which the top is open, and a plurality of gas injection holes 132 are formed at the bottom thereof. Each process gas injection unit 126 is formed in a shape similar to a fan shape in which an upper portion is opened and a space in which gas is diffused is formed, and a plurality of gas injection holes 128 for injecting gas are formed in the lower portion. . Each process gas injection unit 126 is arranged along the circumferential direction of the central injection unit 131 to form a circle.

The central injection unit 131 is coupled to the lower center of the top lead 122 to form a space in which gas is diffused therebetween, and each process gas injection unit 126 is centrally injected from the lower part of the top lead 122. The lower portion of the top lead 122 is coupled along the circumferential direction of the unit 131.

The central injection unit 131 injects a purge gas serving as an air curtain so that different types of gases injected from the plurality of process gas injection units 126 are not mixed with each other at the center of the substrate support 200.

The gas injection device 120 formed as above is the central injection unit 131 and the plurality of process gas injection units 126 are not integrally formed and are completed through assembly, so that the central injection unit 131 and the plurality of process gas injections are completed. A space having a width of about 0.2 to 0.4 mm is formed between the unit 126 and the plurality of process gas injection units 126. Therefore, in the process of depositing the thin film, the gas injected from the process gas injection unit 126 is introduced into the space by the pressure difference between the space and its surroundings. This causes the reaction of the source gas and the reaction gas in the space to generate foreign matters such as particles, the foreign matters are introduced into the thin film deposited or deposited on the injection unit forming the space to deteriorate the quality of the thin film. Works. Thus, in the embodiment of the present invention by forming the side injection port 134 for injecting the gas in the lateral direction in the central injection unit 131, the gas injected through the side injection port 134 is introduced into the space, the process of depositing a thin film It is possible to suppress the phenomenon that the source gas, the reaction gas and the like flow into the space.

To this end, a plurality of side injection holes 134 may be formed on the sidewall of the central injection unit 131 as shown in FIG. 4. The side injection hole 134 is a space formed between the central injection unit 131 and the plurality of process gas injection units 126 for the purge gas supplied to the gas diffusion space, that is, the assembly tolerance generated in the process of manufacturing the gas injection device. Flow into the formed space. The purge gas introduced into the space thus prevents the generation of particles due to the reaction of the reaction gas and the source gas by preventing the reaction gas and the source gas from entering the space. As shown in FIG. 4, the side injection holes 134 may be formed in a hole shape, and as shown in FIG. In addition, the form is not limited to this. When the space for forming the side injection holes 134 is not secured on the side wall of the central injection unit 131, a groove having a predetermined depth may be formed along the lower edge of the inside of the central injection unit 131. In addition, the side injection hole 134 may smoothly flow into the space formed between the process gas injection unit 126, as well as the space formed between the central injection unit 131 and the process gas injection unit 126. It may be formed to be close to the top lead 122 side. The side injection holes 134 may be formed at positions corresponding to the connection portions of the process gas injection unit 126. As such, when the side injection holes 134 are formed at positions corresponding to the connection portions of the process gas injection unit 126, the gas discharged through the side injection holes 134 is formed in the space formed between the process gas injection units 126. Can be introduced directly. Therefore, the reaction gas or the source gas can be effectively suppressed from flowing into the space between the process gas injection units 126.

In addition, the gas inlets 124S, 124P, and 124R are formed in the top lead 122 in a number corresponding to the number of the central injection unit 131 and the process gas injection unit 126, and thus the top lead 122 and the process gas injection. In communication with the gas diffusion space between the units (126). Each gas inlet 124S, 124P, and 124R may be selectively connected to various external gas supply sources (not shown).

An intermediate plate (not shown) having an injection hole (not shown) may be interposed between the top lead 122 and the process gas injection unit 126. In this case, the gas introduced into the process gas injection unit 126 through the gas introduction ports 124S and 124R is formed between the top lead 122 and the intermediate plate and between the intermediate plate and the process gas injection unit 126. It can spread evenly in space. That is, the process gas introduced through the gas introduction ports 124S and 124R must be completely diffused in the gas diffusion space and then supplied to the substrate S so that the process gas can be supplied evenly over the entire area of the substrate S. have. By interposing an intermediate plate between the top lead 122 and the process gas injection unit 126, the gas supplied from the gas inlets 124S and 124R is primarily diffused between the intermediate plate and the top lead 122. After being discharged through the injection hole formed in the intermediate plate, and again diffused between the intermediate plate and the process gas injection unit 126 to be supplied to the substrate (S). The process gas is completely diffused in the gas diffusion space through two diffusion processes, so that the process gas may be evenly sprayed on the entire region of the substrate S.

The substrate processing apparatus configured as described above is continuously supplied with the raw material gas (S), the reaction gas (R) and the purge gas (P) through the gas injection device 120 in the process of depositing a thin film, Residual gas and by-products are discharged to the exhaust pipe 140 through the exhaust port 104.

Hereinafter, the flow of the gas in the gas injection device thus formed will be described in more detail.

6 is a view showing a gas flow in the gas injection device according to an embodiment of the present invention.

Fig. 6A is a sectional view of the gas injection device. Referring to FIG. 6A, the gas supplied through the gas inlet is introduced into the gas diffusion space between the top lead 122 and the central injection unit 131, so that the gas injection hole 132 and the side injection hole 134 are provided. Sprayed through). The gas injected through the gas injection hole 132 prevents a mixture of different types of gases injected from the plurality of process gas injection units 126 in the center of the substrate support 200. In addition, the gas injected into the side injection hole 134 moves in the vertical direction in the space between the central injection unit 131 and the plurality of process gas injection unit 126, the gas injected from the process gas injection unit 126 Prevent entry into space.

In addition, referring to Figure 6 (b), the gas injected through the side injection port 134 is the space between the central injection unit 131 and the process gas injection unit 126 and between the process gas injection unit 126 Flows into space. As such, when the gas is introduced into the space, the pressure difference between the space and the other regions is offset to prevent the process gas from flowing into the space.

7 is a schematic cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention, and FIG. 8 is a view showing a modified example of the central injection unit applied to the substrate processing apparatus of FIG. 7.

Referring to FIG. 7, a process gas injection unit 126 and a central injection unit 135 are coupled to a lower portion of the top lead 122, and a plurality of gases communicating with the respective injection units are attached to the top lead 122. Inlet ports 124S, 124P1, and 124R are formed. The top lead 122 has an auxiliary gas introduction hole 124P2 formed in the circumferential direction of the central injection unit 135, that is, between the central injection unit 135 and the process gas injection unit 126. The auxiliary gas inlet 124P2 directly supplies the purge gas to the space between the central injection unit 135 and the process gas injection unit 126. Gas supplied through the auxiliary gas inlet 124P2 flows into a space formed between the central injection unit 135 and the process gas injection unit 126 and between the process gas injection unit 126.

The central injection unit 135 is formed in a cylindrical shape in which an upper portion is opened and a gas injection hole is formed in a lower portion thereof, and is formed in a shape substantially similar to that of a conventional central injection unit 135.

On the other hand, the central injection unit may be formed in a double structure having an independent space therein. Referring to FIG. 8A, the central injection unit includes a hollow cylindrical body 137 having an open top and a hollow cylindrical outer wall 136 spaced apart from the outer circumferential surface of the side wall of the body 137. The 137 and the outer wall 136 are connected through the lower surface of the body 137. In addition, the gas injection hole 139 is formed only on the lower surface of the body 137, that is, the inner space, and a plurality of side injection holes 138 are formed on the outer wall 136. Through such a configuration, the central injection unit is formed with an inner space and an outer space separated by the side wall of the body 137. When the central injection unit is coupled to the lower part of the top lid 122, it is preferable that the inner space and the outer space are independently separated by the side wall of the body 137. In addition, in order to separate the internal space and the external space as described above, the central injection unit may be connected to the lower part of the top lid 122 in a state where a sealing member (not shown) such as an O-ring is disposed on the upper surface of the side wall of the body 137. It may be.

Referring to (b) of FIG. 8, the inner space and the outer space of the central injection unit communicate with each other gas inlets 124P1 and 124P2. The inner space is in communication with the gas inlet 124P1 for supplying the purge gas, and the outer space is in communication with the auxiliary gas inlet 124P2 for supplying the purge gas. Therefore, the gas supplied to the internal space of the central injection unit is supplied to the upper portion of the substrate support 200, the gas supplied to the external space is injected laterally through the side injection hole 138 to between the central injection unit and the process gas injection unit. And flows into the space between the process gas injection units. Comparing FIG. 7 and FIG. 8B, it can be seen that there are some differences in the positions of the auxiliary gas inlets 124P2 formed in the top lid 122. The auxiliary gas inlet 124P2 of FIG. 7 is formed to supply gas to a space formed between the central injection unit and the process gas injection unit, but the auxiliary gas inlet 124P2 formed in FIG. There is a difference that is formed to supply gas to the central injection unit, that is, the outer space of the central injection unit.

As such, although the same gas is supplied to the auxiliary gas inlet 124P2 as the gas inlet 124P1 for supplying the gas to the internal space, the flow rate of the gas supplied to the internal space and the external space can be independently controlled. have.

In the substrate processing apparatus thus formed, the following experiment was performed to check whether the process gas is introduced into the space formed between the central injection unit, the process gas injection unit, and the process gas injection unit.

[Table 1] below shows a conventional substrate processing apparatus (comparative example) having a gas injection apparatus in which a side injection hole is not formed in a central injection unit, and a gas injection apparatus in which a side injection hole is formed in a central injection unit. It is a result of depositing a thin film on a substrate using a substrate processing apparatus according to an embodiment of the present invention, and measuring the thickness of the deposited thin film. At this time, in order to check whether or not the gas phase chemical reaction on the substrate support, the substrate support was injected with the process gas in a stopped state. This is whether the process gas flows into the space formed between the injection units, for example, the raw material gas flows into the injection zone of the reaction gas, or the reaction gas flows into the injection zone of the raw material gas, thereby causing a gas phase chemical reaction to form a thin film. To check.

Comparative Example Example Gas supply Ar 1500sccm Ar 500sccm Average 1.57 0 Maximum 7.2 0

In general, when the amount of purge gas supplied to the central injection unit is too large, the uniformity of the thin film deposited on the substrate is lowered. When the amount of purge gas is too small, heterogeneous gases injected through the process gas injection unit are supplied to the substrate. It is difficult to deposit the desired thin film due to chemical vapor reaction on the support. However, in the comparative example, it was confirmed that a gas phase chemical reaction occurred when Ar was supplied to the central injection unit of 1500 sccm or less. However, if a large amount of Ar is supplied to prevent the gas phase chemical reaction, the uniformity of the thin film deposited on the substrate is deteriorated.

Looking at the above [Table 1], in the comparative example, when 1500sccm of Ar was supplied to the central injection unit, a thin film having an average thickness of 1.57Å was deposited on the substrate. It is determined that the process gas injected through the process gas injection unit flows into the space between the injection units and a gas phase chemical reaction occurs on the substrate support to form a thin film on the substrate.

However, in the exemplary embodiment, even when a small amount of Ar, 500 sccm, was sprayed through the central spray unit, the thin film was not deposited on the substrate. It can be seen that Ar is not introduced into the space between the injection units, so that no gas flows into the space, so that no gas phase chemical reaction occurs on the substrate support. When the amount of gas injected through the central injection unit is significantly reduced, the uniformity of the thin film deposited on the substrate may also be improved.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

100 chamber 102 space part
104: exhaust port 106: through hole
110: main body 120: gas injection device
122: top lead 124: gas inlet
126: process gas injection unit 128, 132: gas injection hole
131, 135: central injection unit 134, 134 '138: side injection hole
136: outer wall 137: body
140: exhaust pipe 200: substrate support
210: rotating shaft 220: support plate
222: substrate seat

Claims (12)

Gas injection device for injecting process gas into the chamber,
A top lead having a plurality of gas inlets through which process gas is supplied;
A central injection unit coupled to a lower central portion of the top lead, the plurality of gas injection holes communicating with at least one of the plurality of gas inlets at a lower surface thereof;
A plurality of process gas injection unit is coupled to the lower portion of the top lead in the circumferential direction along the edge of the central injection unit, a plurality of gas injection holes formed in the lower surface in communication with any one of the plurality of gas inlet; ,
Gas injection device is formed in the central injection unit has at least one side injection port for injecting gas in the lateral direction. The method according to claim 1,
The central injection unit is a gas injection device is formed in a hollow cylindrical shape of the upper side, the side injection hole is formed on the side wall. The method according to claim 1,
The central injection unit includes a body having an inner space having an open upper portion, and an outer wall spaced apart from the outer circumferential surface of the side wall of the body and having side injection holes formed therein, wherein the body and the outer wall are connected through a lower surface of the body to allow the body to be formed. An outer space is formed between the outer wall and the outer wall;
And the inner space and the outer space communicate with different gas inlets. The method according to any one of claims 1 to 3,
The side injection port is a gas injection device is formed corresponding to the connection portion of the plurality of process gas injection unit. The method of claim 4,
The side injection port is formed through the central injection unit gas injection device. The method of claim 4,
The side injection port is a gas injection device is formed by the groove portion is open. Gas injection device for injecting process gas into the chamber,
A top lead having a plurality of gas inlets through which process gas is supplied;
A central injection unit coupled to a lower central portion of the top lead, and having a plurality of gas injection holes communicating with at least one of the plurality of gas inlets at a lower surface thereof;
A plurality of process gas injection unit is coupled to the lower portion of the top lead in the circumferential direction along the edge of the central injection unit, a plurality of gas injection holes formed in the lower surface in communication with any one of the plurality of gas inlet; ,
At least one of the plurality of gas inlet ports is configured to inject gas between the central injection unit and the plurality of process gas injection units. A chamber in which a space is formed;
A substrate support part rotatably installed in the chamber to support a plurality of substrates; And
A gas injection device provided on an upper portion of the substrate support to inject a process gas to the substrate;
Including;
The gas injection device includes a top lead formed with a plurality of gas inlets for supplying a process gas, and a plurality of gas injections coupled to a lower center of the top lead and communicating with at least one of the plurality of gas inlets on a lower surface thereof. A plurality of processes in which a ball is coupled to the central injection unit, a lower portion of the top lead in the circumferential direction along the edge of the central injection unit, a plurality of gas injection holes formed in the lower surface in communication with any one of the plurality of gas inlet Including a gas injection unit,
The central processing unit is formed with at least one side injection port for injecting gas in the lateral direction substrate processing apparatus. The method according to claim 8,
The center spraying unit is formed in a hollow cylindrical shape of the upper side, the substrate processing apparatus is formed with side injection holes on the side wall. The method according to claim 8,
The central injection unit includes a body having an inner space having an open upper portion, and an outer wall spaced apart from the outer circumferential surface of the side wall of the body and having side injection holes formed therein, wherein the body and the outer wall are connected through a lower surface of the body to allow the body to be formed. An outer space is formed between the outer wall and the outer wall;
And the inner space and the outer space communicate with different gas inlets. The method according to any one of claims 8 to 10,
The side injection hole is formed in correspondence with the connecting portion of the plurality of process gas injection unit substrate processing apparatus. A chamber in which a space is formed;
A substrate support part rotatably installed in the chamber to support a plurality of substrates; And
A gas injection device provided on an upper portion of the substrate support to inject a process gas to the substrate;
Including;
The gas injection device includes a top lead formed with a plurality of gas inlets through which a process gas is supplied, and a plurality of gas injection holes coupled to a lower center of the top lead and communicating with at least one of the plurality of gas inlets on a lower surface thereof. A plurality of process gases coupled to a central injection unit and a lower portion of the top lead in a circumferential direction along an edge of the central injection unit, and having a plurality of gas injection holes communicating with one of the plurality of gas inlets at a lower surface thereof; Including a spray unit,
At least one of the plurality of gas inlet is formed to inject a gas between the central injection unit and the plurality of process gas injection unit substrate processing apparatus.

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