KR20130062374A - Deposition of layers using deposition apparatus with reciprocating susceptors - Google Patents

Abstract

Atomic layer deposition is performed by reciprocating the susceptor in two directions and causing the substrate on the susceptor to undergo two different sequences of processes. By allowing the susceptor to undergo different sequences of processes, the substrate undergoes different processes that would otherwise require a set of additional injectors or reactors. Reduced numbers of injectors or reactors enable more compact deposition apparatus and reduce the costs associated with the deposition apparatus.

Description

FIELD DEPOSITION OF LAYER USING DEPOSITING APPARATUS WITH RECIPROCATING SUSCEPTOR

The present invention relates to the deposition of one or more layers of materials on a substrate using atomic layer deposition (ALD).

Atomic Layer Deposition (ALD) is a thin film deposition technique for depositing one or more layers of materials on a substrate. ALD uses two types of chemicals, one is the precursor precursor and the other is the reaction precursor. In general, ALD involves the following four steps: (i) raw material precursor injection, (ii) removal of the physical adsorption layer of the raw material precursor, (i) reaction precursor injection, and (iii) removal of the physical adsorption layer of the reaction precursor. ALD can be a slow process that takes a long time or many iterations before a layer of desired thickness is obtained. Therefore, to expedite the process, vapor deposition reactors or other similar devices with unit modules (called linear injectors) described in U.S. Patent Publication No. 2009/0165715 are used to quickly process an ALD process. The unit module includes an inlet and an exhaust for the raw material (raw module) and an inlet and an exhaust for the reactant (reaction module).

A conventional ALD vapor deposition chamber has one or more reactor sets for depositing ALD layers on substrates. As the substrate passes under the reactors, the substrate is exposed to the source precursor, the purge gas and the reaction precursor. The precursor precursor molecules deposited on the substrate react with the reactant precursor molecules or the precursor precursor molecules are replaced by the reactant precursor molecules to deposit a material layer on the substrate. After exposing the substrate to the source precursor or the reactant precursor, the substrate may be exposed to a purge gas to remove excess source precursor molecules or reactant precursor molecules from the substrate.

It is an object of the present invention to provide a deposition method or deposition apparatus that can perform additional surface treatment when depositing a layer of material on a substrate without adding an injector or radical reactor.

Embodiments relate to depositing one or more layers of material on a substrate by causing relative movements in two opposite directions between the substrate and the reactors. The reactors inject gas or radicals onto the substrate as the substrate passes through the reactors. When the substrate and the reactors make a relative movement in the first direction, at least one atomic layer is deposited on the substrate by injecting at least one precursor gas and reactant gas over the substrate. When the substrate and the reactors make relative motion in the second direction, annealing of the substrate surface is performed by the reactors.

In one embodiment, the relative movements of the susceptor and reactors in the first and second directions are repeated for a predetermined number of times. In this way, a layer of desired thickness can be obtained.

In one embodiment, radicals of inert gas are injected onto the substrate to treat the surface of the substrate. The raw material precursor is injected onto the substrate after radicals of inert gas are injected onto the substrate. Exposing the surface of the substrate to radicals of inert gas increases the absorption of raw precursor molecules on the substrate surface, which advantageously increases the deposition rate of the layer. Inert gases may include argon gas.

In one embodiment, the precursor gas comprises trimethylaluminium. The reaction gas contains oxygen radicals. The deposited layer is Al ₂ O ₃

According to embodiments of the present invention, when the material layer is deposited on the substrate, additional surface treatment may be performed without adding an injector or a radical reactor, thereby reducing manufacturing cost and complexity of the deposition apparatus.

1 is a cross-sectional view of a linear deposition apparatus according to an embodiment.
2 is a perspective view of a linear deposition apparatus according to one embodiment.
3A is a perspective view of a rotary deposition apparatus according to one embodiment.
3B is a diagram illustrating a reactor according to one embodiment.
4A-4G are conceptual diagrams illustrating a sequence of processes for depositing one or more materials on a substrate in accordance with one embodiment.
5 is a flowchart illustrating a process of depositing one or more layers on a substrate in accordance with one embodiment.
6A-9B are diagrams and tables illustrating processes performed on a substrate by various reactor units in accordance with various embodiments.

Embodiments are described herein with reference to the accompanying drawings. However, the principles disclosed herein may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In this specification, detailed descriptions of well-known features and techniques may be omitted to avoid unnecessarily obscuring the features of the embodiment.

In the drawings, like reference numerals in the drawings represent like elements. The shape, size and area of the drawings, and the like, may be exaggerated for clarity.

Embodiments relate to performing atomic layer deposition by causing a substrate on a secessor to undergo two different process sequences by susceptors reciprocating in two opposite directions. As the substrate moves in one direction, a series of gases and / or radicals are injected into the substrate by the reactor. Reciprocating movement of the substrate in both directions causes the substrate to undergo two different process sequences. By causing the susceptor to undergo two different process sequences, the substrate may undergo one or more processes that would otherwise require an additional reactor set.

The reduced number of reactors allows for more compact deposition apparatus and the savings associated with deposition apparatus.

1 is a cross-sectional view of a linear deposition apparatus 100 according to an embodiment. 2 is a perspective view of the linear deposition apparatus 100 according to one embodiment (without the chamber wall 100 for illustrative purposes). The linear deposition apparatus 100 may include a support column 111, a process chamber 110 and one or more reactors 136, among other elements. Reactors 136 may include one or more injectors and radical reactors. Each of the injector modules injects a precursor precursor, a reaction precursor, a purge gas, or a combination of these materials into the substrate 120.

The process chamber surrounded by the walls 110 may be kept in vacuum to prevent contaminants from affecting the deposition process. The process chamber 110 includes a susceptor 128 that receives a substrate 120. The susceptor 128 may be positioned on the support plate 124 for the sliding movement. The support plate 124 may include a temperature controller (e.g., a heater or a cooler) for controlling the temperature of the substrate 120. The linear deposition apparatus 100 also lifts pins that facilitate loading the substrate 120 over the susceptor 128 or lowering the substrate 120 at the susceptor 128 (FIG. 4A, below). 4b and 4F).

In one embodiment, susceptor 128 is secured to bracket 210 moving across extension bar 138 with screws formed therein. Bracket 210 has corresponding screws formed in the holes that receive extension bar 138. The extension bar 138 is fixed to the spindle of the motor 114, so that the extension bar 138 rotates as the spindle of the motor 114 rotates. Rotation of the extension bar 138 causes the bracket 210 (and thus susceptor 128) to make a linear movement over the support plate 124. By controlling the speed and direction of rotation of the motor 114, the speed and direction of linear movement of the susceptor 128 can be controlled. The use of motor 114 and extension bar 138 is merely one example of how to move susceptor 128. There may be various other ways of moving the susceptor 128 (eg, using gears and pinions at the bottom, over or side of the susceptor 128). Moreover, instead of the movement of the susceptor 128, the susceptor 128 may remain stationary and the reactors 136 may move.

3A is a perspective view of a rotary deposition apparatus 300 according to an embodiment. Instead of using the linear deposition apparatus 100 of FIG. 1, the rotary deposition apparatus 300 may be used to perform the deposition process according to another embodiment. Rotary deposition apparatus 300 may include reactors 320, 334, 364, 368, susceptor 318, and a container 324 surrounding these elements, among other elements. The susceptor 318 holds the substrate 314 in place. Reactors 320, 334, 364, 368 are positioned over substrate 314 and susceptor 318. The susceptor 318 or reactors 320, 334, 364, 368 rotate to allow the substrate to undergo other processes.

One or more reactors 320, 334, 364, 368 are connected to a gas pipe (not shown) that supplies a raw material precursor, a reaction precursor, a purge gas and / or other materials. The materials supplied by the gas pipe are either (ii) mixed in the chambers inside the reactors 320, 334, 364, 368 or (iii) in the plasma generated inside the reactors 320, 334, 364, 368. After being converted into radicals by (i) it can be injected directly into the substrate 314 by reactors 320, 334, 364, 368. After the materials are injected into the substrate 314, the extra materials can be exhausted through the outlets 330, 338.

Embodiments described herein may be used in linear deposition apparatus 100, rotary deposition apparatus 300, or other types of deposition apparatus. Using the linear deposition apparatus 100 and the rotary deposition apparatus 300 as an example, the substrates 120 or 314 may be different from each other by moving the substrates 120 or 314 in one direction and then another direction with respect to the reactors. Process sequences may be encountered.

3B is a diagram illustrating a reactor 351 according to one embodiment. The reactor 351 may be used in the linear deposition apparatus 100 or the rotary deposition apparatus 300. Reactor 351 may include, among other elements, an injector 370 and a radical reactor 374. As shown, the injector 370 is lifted above the substrate 314 by a height H1 to provide enough space for the substrate 314 to pass under the injector 370 and the radical reactor 374 and the radical reactor ( 374 is lifted above substrate 314 by height H2.

The injector 374 receives gas through the pipe 364 and injects the gas into the chamber 384 through the channels 372 and holes 373 formed in the injector 370. The gas injected through injector 374 may be a raw material precursor, a reaction precursor, a purge gas, or any other gas. Within the chamber 384, the gas then comes into contact with the substrate 314 and functions as a precursor or purge gas. The remaining gas is discharged to the outlet 371 through the constriction region 386 (having a height H2). Since the flow rate of gas in the constriction region 384 increases, it is easy to remove excess gas from the surface of the substrate 314.

Radical reactor 374 receives gas through pipe 366. Gas is injected into the hole 380 between the inner electrode 376 and the outer electrode 378. Voltage is applied across the inner electrode 376 and the outer electrode 378 so that when the gas is injected into the hole 380, a plasma of the gas in the hole 380 generates radicals. Radicals of the gas are then injected into the chamber 390 where the radicals come into contact with the substrate 314. The extra radicals pass through the constriction region 388 (having a height H3), and the radicals return to the inactive state and are released through the outlet 371.

The reactors of FIG. 3B are exemplary. Various other types of reactors may be used in the linear deposition apparatus 100 or the rotary deposition apparatus 300. In other embodiments, the reactors may include only injectors, only include radical reactors, may include two or more injectors and radical reactors, or may include radical reactors / injectors in a different sequence.

4A-4G are conceptual diagrams illustrating a sequence of processes for depositing one or more material layers on a substrate 124, according to one embodiment. First, lift pins 410 are lifted to receive substrate 120 (see FIG. 4A). Subsequently, the substrate 120 is placed on the susceptor 124 by placing the substrate 120 over the lift pin 410 (see FIG. 4B) and then lowering the lift pin 410 (see FIG. 4C).

The susceptor 120 is then moved across the reactors 130 such that the substrate 120 undergoes a first sequence of processes. The direction of movement of the susceptor is then reversed and the susceptor moves in the opposite direction to undergo a second sequence of processes on the substrate 120. The second sequence of processes is an inverted sequence of the first sequence of processes. Depending on the thickness of the deposited layer or the desired properties of the deposited layer, the first and second sequences of processes may be repeated a predetermined number of times.

After a predetermined number of times of the first and second sequences are repeated, the substrate 120 is lifted from the susceptor by the lift pins 410 (see FIG. 4F) and removed from the susceptor (see FIG. 4G).

5 is a flowchart illustrating a process of depositing one or more material layers on a substrate according to an embodiment. First, the substrate is placed 510 on the susceptor. The susceptor (along with the substrate) is moved 520 across one or more reactors in one direction such that the substrate undergoes a first sequence of processes. The susceptor is then moved 530 across the same set of reactors in the opposite direction so that the substrate undergoes a second sequence of processes. When the susceptor moves in both directions but in a different sequence from one another, the reactors can inject the same gas and / or radicals.

It is then determined 540 whether the conditions for terminating the process have been met (eg, if the layer has reached a predetermined thickness or if the processes have been repeated a predetermined number of times). If the termination condition is not met, the process returns to step 520 of moving the separator in one direction and repeats subsequent processes. If the termination condition is met, the process proceeds to step 550 to lower the substrate from the susceptor.

Examples of processing a substrate by other processes are described herein with reference to FIGS. 6A-9B. The deposition apparatus of FIG. 6A includes a first unit 602 and a second unit 614 for depositing an Al ₂ O ₃ layer on a substrate 620. The first unit 602 includes injection modules 614, 622, 634 and a radical reactor 626. Injector module 614 injects Trimethylaluminum (TMA) and injector modules 622 and 634 inject argon gas. The radical reactor 626 generates oxygen radicals (O *) and injects the radicals into the substrate 620. Extra gas or plasma in the first unit 602 is emitted through the outlets 618 and 630. The second unit 614 has the same structure as the first unit 614. That is, the second unit 614 includes three injector modules 638, 648, 660 and a radical reactor 652. Injector module 638 injects TMA and injector modules 648 and 660 inject argon gas. Extra gas or plasma in the second unit 614 is discharged through the outlets 644 and 656.

In the embodiment of FIG. 6A, the substrate 620 moves from left to right (in the first direction) and then from right to left (in the second direction). The sequence of materials and processes to which the substrate 620 is exposed is described in FIG. 6B. When moving below the first unit 602 in the first direction, the substrate 620 is exposed to TMA (as a raw material precursor), followed by argon gas (as a purge gas to remove physisorbed excess TMA). Exposed. After being injected, argon gas passes through the constricted region 621. When passing through the constricted region 621, the flow rate of argon gas is increased. The increased flow rate of argon gas contributes to effectively removing excess TMA (physisorbed TMA) from the surface of the substrate 620.

Substrate 620 is then exposed to O * (as a reactive precursor). The reaction between TMA and O * causes a layer of Al ₂ O ₃ . The injected argon gas then removes excess gas from the surface of the substrate 620. When the substrate 620 passes under the first unit 602 and the second unit 614 because the first unit 602 and the second unit 614 have the same structure and inject the same gases or radicals. The substrate 620 undergoes the same process twice.

When the substrate 620 moves in the second direction, the substrate 620 is first exposed to argon gas (by injector 660) and then to radical O * (by radical reactor 652). Exposure to O * causes annealing of the substrate 620. Substrate 620 then undergoes argon gas (by injector 648) and then through TMA (by injector 638). Substrate 620 is then injected with argon gas (by injector 634) and then with O * (by radical reactor 626). Exposure of the substrate 620 to the TMA (by the injector 638) and subsequent exposure to O * (by the radical reactor 626) form an Al ₂ O ₃ layer on the substrate 620 (FIG. 6B). See dashed box). As a result, moving the substrate 620 in a second direction (right to left) means that the substrate 620 is annealed by O * (generated by the radical reactor 652), followed by the Al ₂ O ₃ layer. To undergo deposition. In the last step of moving the substrate 520 in the second direction, the substrate 620 is exposed to the TMA by the injector 614.

The substrate 620 is then moved back in the first direction. When moving back in the first direction, the substrate 620 is again exposed to the TMA by the injector 614. However, exposure to this additional TMA can advantageously ensure that the surface absorbs the TMA. Furthermore, removal of excess TMA (by injector 622) removes excess TMA, and thus exposing substrate 620 to TMA twice is dependent upon the quality of the Al ₂ O ₃ layer formed on substrate 620. It does not work negatively.

The substrate 620 may reciprocate for a predetermined number of times in both the first and second directions to obtain an Al ₂ O ₃ layer of a desired thickness.

Note that moving the substrate 620 in the second direction causes the substrate 620 to advantageously undergo annealing. If the substrate 620 is moved only in the first direction, the substrate 620 will not undergo any annealing process. Rather, two layers of Al ₂ O ₃ will be formed on the substrate 620. By moving the substrate 620 in the second direction, the substrate 620 can be surface treated without any additional reactors. Thus, the properties of the deposited Al ₂ O ₃ layer can be enhanced without the associated costs associated with providing additional radical reactors.

According to one embodiment, the deposition apparatus of FIG. 7A includes a first unit 704 and a second unit 708 for depositing a layer of Al ₂ O ₃ on a substrate 710. The first unit 704 includes two injection modules 712, 720 and two radical reactors 724, 732. The injection module 712 injects the TMA, and the injection module 720 injects argon gas. The radical reactor 724 produces O * and injects radicals onto the substrate 710. The radical reactor 732 generates argon radicals Ar * and injects them onto the substrate 710. Extra gases or radicals in the first unit 704 are discharged through the outlets 716 and 728. The second unit 708 has the same structure as the first unit 704. That is, the second unit 708 includes two injection modules 736, 744 and two radical reactors 748, 756. Injector modules 748 and 756 inject O * radicals and Ar * radicals onto the surface of substrate 710, respectively. Extra gases or radicals in the second unit 708 are released through the outlets 740, 752.

In the embodiment of FIG. 7A, the substrate 710 moves from left to right (in the first direction) and then from right to left (in the second direction). Materials exposed to the substrate 710 and their process sequences are described in FIG. 7B. When moving below the first unit 704 in the first direction, the substrate 710 is exposed to a TMA (as a raw material precursor) and then by the injector 720 as a purge gas to remove the argon gas (extra TMA). ). Substrate 710 is then exposed to O * (as a reactive precursor) by radical reactor 724. The reaction between TMA and O * results in an Al ₂ O ₃ layer. The next Ar * is treated in a state where it is possible to absorb the precursor precursor better when passing the surface of the substrate 710 below the second unit 708. Exposure of the Al 2 O 3 layer to Ar * radicals is advantageous because in the subsequent process the surface of the layer will attract more TMA molecules. Exposure to Ar * radicals leads to approximately new times Al ₂ O ₃ thickness compared to the case where the substrate 710 is not exposed to Ar * radicals ("3 ALD" in the dashed ellipse in FIG. The thickness of the formed ALD layer is approximately new compared to the ALD layer formed when not previously exposed to Ar *).

After exposure to Ar * (by the radical reactor 732), TMA is again injected into the substrate 710 (by injector 736), argon gas is injected (by injector 744), O * radicals are injected (by the radical reactor 748), and Ar * radicals are injected (by the radical reactor 756).

When the substrate 710 moves in the second direction, the substrate 710 is first exposed to Ar * radicals (by the radical reactor 756) and then to O * radicals (by the radical reactor 748). do. Exposure to O * radicals causes annealing of the substrate 710. The substrate 710 then undergoes argon gas (by injector 744) and then TMA (by injector 736). Substrate 710 is then implanted with an argon plasma (by radical reactor 732) and O * radicals (by radical reactor 724). Exposure of the substrate 710 to the TMA (by the injector 736) and subsequent O * (by the radical reactor 732) form an Al ₂ O ₃ layer over the substrate 710 (FIG. 7B). See dashed box). As a result, moving the substrate 710 in a second direction (right to left) means that the substrate 710 is annealed by O * (generated by the radical reactor 748), followed by the Al ₂ O ₃ layer. To undergo deposition. In the last step of moving the substrate 710 in the second direction, the substrate 710 is exposed to the TMA by the injector 712.

The substrate 710 is then moved back in the first direction. When moving back in the first direction, the substrate 710 may again be exposed to the TMA by the injector 712. However, this additional exposure to the TMA advantageously ensures that the surface sufficiently absorbs the TMA. Furthermore, removal of excess TMA (by injector 720) removes excess TMA, and thus exposing the substrate to TMA twice is the quality of the Al ₂ O ₃ layer formed on the substrate by exposure to O *. Does not act negatively on

Similar to the embodiment of FIG. 6A, the embodiment of FIG. 7A may advantageously undergo annealing by O * as well as experiencing increased deposition rates due to exposure to Ar * without requiring additional reactors.

In other embodiments, increased numbers of units may be added. For example, instead of using the same two units of the deposition module as in the embodiments of FIGS. 6A and 7A, three or more units of the deposition module may be arranged side by side to increase the deposition rate per reciprocation of the substrate.

Although the embodiments of FIGS. 6A and 7A use units of modules of the same configuration, in other embodiments each unit of modules may have a different configuration. 8A is a diagram illustrating a reactor with a first unit 804 and a second unit 808 in other configurations. The first unit 804 includes three injectors 812, 820, 834 and a radical reactor 824 for Al ₂ O ₃ layer deposition. Injectors 812, 820, 834 inject TMA, argon gas, and argon gas onto substrate 810, respectively. Outlets 816, 830 are provided to exhaust excess gases or radicals from the first unit 840. The second unit 808 includes a radical reactor 838 and an injector 846 for annealing the substrate 810. The second unit 808 also includes an outlet 842 for venting excess gas or radicals from the second unit 808.

When the substrate 810 moves below the first unit 804 in a first direction (from left to right), the substrate undergoes the same series of processes as described above with reference to the first unit 602 of FIG. 6A. Therefore, the detailed description of the processes associated with the first unit 804 is omitted here for brevity. After passing under the first unit 804, the substrate 810 moves under the second unit 808. As the substrate 810 passes under the second unit 808, the radical reactor 838 injects O * on the surface of the substrate 810 to anneal the surface of the substrate 810. Argon gas is then injected onto the substrate 810 by the injector 846 to remove excess material from the surface of the substrate 810.

When the substrate 810 moves in the second direction (right to left), argon gas is first injected into the surface 810 by the injector 846, followed by injection of O * by the radical reactor 838. Subsequent processes in the first unit 840 are the same as those in the first unit 602 of FIG. 6A, and therefore, detailed descriptions of the processes associated with the first unit 804 are omitted for brevity. . 8B summarizes the processes performed on the substrate 810 by the first unit 804 and the second unit 808.

Note that when moving in the second direction, the substrate 810 is surface treated twice by O *. Therefore, the substrate 810 is surface treated three times during the cycle of reciprocation (once when moving in the first direction and twice when moving in the second direction). Two additional surface treatments are achieved without adding any injector or radical reactor, which reduces the cost and complexity associated with the added elements.

9A is an arrangement of reactors according to another embodiment. In this embodiment, two units of reactors are provided: first unit 904 and second unit 908. The first unit 904 is essentially the same as the first unit of FIG. 6A, and therefore its detailed description is omitted for brevity. The second unit 908 includes two radical reactors 920, 928. The radical reactor 920 injects O * radicals onto the substrate 190. The radical reactor 28 injects Ar * radicals onto the substrate 910. An outlet 924 for discharging excess gases and radicals is provided between the two radical reactors 920, 928. 8B summarizes the materials implanted on the substrate 910 and the processes performed on the substrate 190. Note that during one cycle of reciprocation a single ALD layer is formed on the substrate 910 and annealing is performed five times.

Although the above embodiments described with reference to FIGS. 6A-9B are Al ₂ O ₃ on a substrate. Although related to depositing a layer, the same principles can be applied to depositing other materials on a substrate. To change the material deposited, the source precursor and the reaction precursor may vary.

Substrates fabricated using such methods can be used in a variety of applications, such as display devices or other electronic devices. Depending on such applications, various types of substrates may also be used. Example substrates may include silicon wafers or glasses.

Although the present invention has been described above in connection with some embodiments, various changes may be made within the scope of the present invention. Therefore, the content of the present invention is described by way of example only, and is not intended to limit the scope of the present invention, the scope of the present invention is set forth in the following claims.

Claims (20)

Causing a relative movement in a first direction between the substrate and the one or more reactors, injecting at least one precursor gas and a reactant gas into the substrate at least on the substrate during the relative movement in the first direction. Causing relative movement in the first direction, in which one atomic layer is deposited; And
Causing relative movement between the substrate and the one or more reactors in a second direction opposite the first direction,
Annealing is performed during the relative movement in the second direction between the one or more reactors. The method of claim 1,
Repeating said relative movement in said first direction and said second direction by a predetermined number of times. 3. The method of claim 2,
Placing the substrate on a susceptor prior to causing the relative movement between the substrates; And
And unloading the substrate from the susceptor after repeating the relative movement by the predetermined number of times. The method of claim 1,
Injecting radicals of an inert gas onto the substrate. The method of claim 4, wherein
Injecting a precursor precursor onto the substrate after injecting the radicals of the inert gas onto the substrate. The method of claim 4, wherein
And the inert gas comprises argon gas. The method of claim 1,
Wherein said precursor gas comprises Trimethylaluminum, said reaction gas comprises oxygen radicals and said layer comprises Al ₂ O ₃ . A susceptor configured to secure the substrate;
One or more reactors configured to inject gas or radicals onto the substrate;
A drive mechanism coupled to the susceptor or the one or more reactors and causing relative movement between the susceptor and the one or more reactors in a first direction and in a second direction opposite the first direction; And
A process chamber surrounding at least a portion of said susceptor and said one or more reactors,
The one or more reactors deposit at least one atomic layer on the substrate during the relative movement in the first direction by injecting at least one precursor gas and reactant gas onto the substrate, and in the second direction. Annealing is performed on the substrate by the one or more reactors during relative movement. The method of claim 8,
And a raising pin configured to raise the substrate over the susceptor or to lower the substrate from the susceptor. The method of claim 8,
And the drive mechanism is configured to cause relative rotational movement between the susceptor and the one or more reactors. The method of claim 8,
And the drive mechanism is configured to cause relative linear movement between the susceptor and the one or more reactors. The method of claim 8,
At least one of the one or more reactors comprises a radical reactor for generating radicals of a gas for annealing the surface of the substrate. The method of claim 8,
At least one of said one or more reactors comprises a radical reactor for generating radicals of an inert gas. The method of claim 13,
At least one of the one or more reactors comprises an injector configured to inject a precursor precursor onto the substrate after the radical reactor injects radicals of the inert gas onto the substrate. Device for depositing. The method of claim 13,
And the inert gas comprises argon gas. The method of claim 8,
The precursor gas comprises trimethylaluminum, the reaction gas comprises oxygen radicals, and the layer comprises Al ₂ O ₃ . A substrate comprising a material layer, the material layer comprising:
Causing relative movement in a first direction between the substrate and one or more reactors, during the relative movement in the first direction by injecting at least one precursor gas and a reactant gas into the substrate in a first sequence Causing relative movement in the first direction, in which at least one atomic layer is deposited on the substrate; And
Causing a relative movement between the substrate and the one or more reactors in a second direction opposite the first direction, wherein the precursor gas and the reactant gas are in the second sequence different from the first sequence Deposited by a method comprising causing relative movement in the second direction, injected into the phase,
And annealing is performed during relative movement between the one or more reactors in the second direction. The method of claim 17,
Wherein the method further comprises repeating the relative movement in the first and second directions by a predetermined number of times. The method of claim 18,
The method further comprises injecting radicals of inert gas onto the substrate. The method of claim 17,
Wherein said precursor gas comprises Trimethylaluminium, said reaction gas comprises oxygen radicals and said layer comprises an Al ₂ O ₂ material.

Images