KR20120133768A - Light emitting device - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting device. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; An insulating layer disposed under the second conductive semiconductor layer and in contact with the second conductive semiconductor layer; An ohmic layer disposed under the second conductive semiconductor layer and in contact with the second conductive semiconductor layer and the insulating layer; A reflective layer disposed under the ohmic layer and in contact with the ohmic layer and the insulating layer; And a barrier layer formed of a metal material disposed under the second conductive semiconductor layer or the reflective layer and in contact with the second conductive semiconductor layer, the insulating layer, and the reflective layer. .
According to an embodiment, there is provided a light emitting device capable of improving reliability.

Description

Light emitting device

An embodiment of the present invention relates to a light emitting device.

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

These light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting equipment such as incandescent lamps and fluorescent lamps, and thus have excellent eco-friendliness and have advantages such as long life and low power consumption. It is replacing them.

The embodiment provides a light emitting device capable of improving reliability.

The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; An insulating layer disposed under the second conductive semiconductor layer and in contact with the second conductive semiconductor layer; An ohmic layer disposed under the second conductive semiconductor layer and in contact with the second conductive semiconductor layer and the insulating layer; A reflective layer disposed under the ohmic layer and in contact with the ohmic layer and the insulating layer; And a barrier layer formed of a metal material disposed under the second conductive semiconductor layer or the reflective layer and in contact with the second conductive semiconductor layer, the insulating layer, and the reflective layer. .

In addition, the insulating layer has a light transmittance of 80% or more.

In addition, an upper surface of the insulating layer contacts the second conductive semiconductor layer, a side surface contacts the barrier layer and the ohmic layer, and a lower surface contacts the barrier layer, the ohmic layer, and the reflective layer.

In addition, the thickness of the insulating layer is 2 to 2000nm.

In addition, the insulating layer includes at least one of SiO ₂ , Si ₃ N ₄ , TiOx, Al ₂ O ₃ .

In addition, the barrier layer includes at least one of Ni, Pt, Ti, W, V, Fe, and Mo.

In addition, a first electrode formed on the light emitting structure and in contact with the first conductive semiconductor layer; The insulating layer further includes at least a portion of the insulating layer and vertically overlaps the first electrode.

In addition, the ohmic layer includes one or more of In, Zn, Sn, Ni, Pt, and Ag.

In addition, the reflective layer includes at least one of Ag, Al, Pt, and Rh.

The method may further include a bonding layer under the barrier layer and a support member under the bonding layer.

In addition, the diffusion barrier layer disposed between the ohmic layer and the reflective layer, made of a transparent insulating material; .

In addition, the reflective layer is composed of two or more reflective layers spaced apart.

In addition, both ends of the reflective layer are in contact with the insulating layer, respectively.

In addition, a passivation layer disposed on the side of the light emitting structure; .

In addition, roughness is formed on an upper surface of the first conductivity-type semiconductor layer.

The light emitting device package of the embodiment includes a package body; The light emitting device provided on the package body; A lead frame provided in the package body and electrically connected to the light emitting device; And a resin layer surrounding the light emitting element. .

According to an embodiment, there is provided a light emitting device capable of improving reliability.

1 is a plan view illustrating a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view taken along the AA ′ direction of the light emitting device illustrated in FIG. 1.
3 is a cross-sectional view illustrating a light emitting device according to another embodiment.
4 is a cross-sectional view illustrating a light emitting device according to another embodiment.
5 is a view showing a light emitting device package according to the embodiment.
6 is a view showing an embodiment of a lighting device having a light emitting module.

Preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the above embodiments, each layer (region), region, pattern or structures may be "on" or "under" the substrate, each layer (layer), region, pad or pattern. When described as being formed, "on" and "under" include both being formed "directly" or "indirectly". In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a plan view illustrating a light emitting device according to an embodiment. FIG. 2 is a cross-sectional view of the light emitting device illustrated in FIG. 1 taken along the AA ′ direction.

The light emitting device 100 includes a LED using a plurality of compound semiconductor layers, for example, a compound semiconductor layer of Group 3-5 elements, and the LED is a colored LED or a UV LED that emits light such as blue, green, or red. Can be. The emitted light of the LED may be implemented using various semiconductors, but is not limited thereto.

Referring to FIG. 2, the light emitting device 100 may include a support assembly 110, a bonding layer 120, a barrier layer 130, a reflector layer 140, and an ohmic layer. ohmic layer 150, an insulating layer 155, a light emitting structure 160, and a first electrode 170.

The support member 110, the bonding layer 120, the barrier layer 130, the reflective layer 140, and the ohmic layer 150 may constitute a second electrode for supplying power to the light emitting structure 160.

The support member 110 may be a conductive member or an insulating member, and supports the light emitting structure 160. For example, the support member 110 may be made of a metal such as Mo, W, Ni, Cu, Si, or an insulating material such as Al ₂ O ₃ , SiO _2, or the like.

The bonding layer 120 is disposed between the support member 110 and the barrier layer 130. The bonding layer 120 allows the support member 110 to be bonded to the barrier layer 130 which is a metal layer. For example, the bonding layer 120 may include at least one of In, Sn, Ag, Nb, Pd, Ni, Au, and Cu.

The barrier layer 130 prevents the metal ions of the bonding layer 120 from diffusing into the reflective layer 140, the ohmic layer 150, and the light emitting structure 160. In addition, the barrier layer 130 is made of a metal material to improve the adhesion between the light emitting structure 160 and the second electrode and to prevent the interface from being broken, thereby preventing the reliability of the light emitting device 100 from being lowered. The barrier layer 130 is disposed under the reflective layer 140 to contact the second conductive semiconductor layer 162, the insulating layer 155, and the reflective layer 140. For example, the barrier layer 130 includes at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

The reflective layer 140 is disposed on the barrier layer 130. The reflective layer 140 may include two or more reflective layers spaced apart from each other, and both ends of the reflective layer 140 may be in contact with the insulating layer 155. The reflective layer 140 reflects light incident from the light emitting structure 160, thereby improving light extraction efficiency of the light emitting device 100. For example, the reflective layer 140 may be formed of a metal including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf or an alloy thereof.

In addition, the reflective layer 140 may include a metal or an alloy, indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), It may be formed in a multi-layer using a transparent conductive material such as aluminum zinc oxide (AZO), antimony tin oxide (ATO). For example, the reflective layer 140 may be formed of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like. The reflective layer 140 is to increase the light extraction efficiency and does not have to be formed.

The ohmic layer 150 is disposed between the reflective layer 140 and the light emitting structure 160. The ohmic layer 150 is ohmic contacted to the light emitting structure 160, for example, the second conductivity type semiconductor layer 162, so that power is smoothly supplied from the second electrode to the light emitting structure 160.

For example, the ohmic layer 150 may include at least one of In, Zn, Sn, Ni, Pt, and Ag. In addition, the ohmic layer 150 may selectively use a light transmissive conductive layer and a metal. For example, the ohmic layer 150 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au, and Ni / IrOx / Au / It includes one or more of ITO and can be implemented in a single layer or multiple layers.

The insulating layer 155 is disposed under the second conductivity type semiconductor layer 162 and is in contact with the second conductivity type semiconductor layer 162. The top surface of the insulating layer 155 is in contact with the second conductivity-type semiconductor layer 162, the side surface is in contact with the barrier layer 130 and the ohmic layer 150, and the bottom surface thereof is the barrier layer 130 and the ohmic layer 150. ) And the reflective layer 140. The thickness of the insulating layer 155 may be 2 to 2000 nm.

The insulating layer 155 prevents the reflective layer 140 disposed under the ohmic layer 150 from contacting the second conductive semiconductor layer 162, thereby improving reliability of the light emitting device 100. Ag, which forms the reflective layer 140, is a material that diffuses well. When the material of the reflective layer 140 diffuses into the second conductive semiconductor layer 162 and contacts the active layer 164, a short circuit may occur.

The insulating layer 155 may be disposed to vertically overlap the first electrode 170 and may function as a current blocking layer. In this case, the insulating layer 155 may improve the luminous efficiency of the light emitting device 100 by alleviating the phenomenon in which current is concentrated to a specific portion of the light emitting structure 160.

The insulating layer 155 may be formed of an electrically insulating material to form a Schottky contact with the second conductive semiconductor layer 162. For example, the insulating layer 155 may include one or more of SiO ₂ , Si ₃ N ₄ , TiOx, Al ₂ O ₃ .

The insulating layer 155 may be made of a transparent material having a light transmittance of 80% or more. Accordingly, the light emitted from the active layer 164 is not absorbed by the insulating layer 155, but is reflected by the reflective layer 140, thereby improving luminous efficiency.

The light emitting structure 160 is disposed on the barrier layer 130, the ohmic layer 150, and the insulating layer 155. Sides of the light emitting structure 160 may be formed to be inclined during an isolation etching process divided into unit chips. That is, the inclination of the side surface of the light emitting structure 160 may be greater than 0 ° and less than or equal to 90 ° with respect to the support member 110. A portion of the top surface of the barrier layer 130 may be exposed by isolation etching.

The light emitting structure 160 may include compound semiconductor layers of a plurality of Group 3 to 5 elements. The light emitting structure 160 includes a second conductive semiconductor layer 162, an active layer 164, and a first conductive semiconductor layer sequentially stacked on the barrier layer 130, the ohmic layer 150, and the insulating layer 155. 166 may include.

The second conductive semiconductor layer 162 is disposed on the barrier layer 130, the ohmic layer 150, and the insulating layer 155, and is a compound semiconductor of a group 3 to group 5 element doped with the second conductive dopant. Can be. A second conductive semiconductor layer 162 may include semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) can do. The second conductive semiconductor layer 162 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and Mg, Zn, Ca, and Sr. P-type dopants, such as Ba, may be doped.

The active layer 164 is disposed on the second conductivity type semiconductor layer 162, and electrons and holes provided from the second conductivity type semiconductor layer 162 and the first conductivity type semiconductor layer 166. Light may be generated by energy generated during the recombination process of. The active layer 164 may include semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The active layer 164 may include any one of a single quantum well structure, a multiple quantum well structure (MQW), a quantum dot structure, or a quantum line structure.

The first conductivity type semiconductor layer 166 may be disposed on the active layer 164 and may be a compound semiconductor of a group III-V group element doped with the first conductivity type dopant. The first conductivity type semiconductor layer 166 may include a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). have. The first conductive semiconductor layer 166 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and Si, Ge, Sn, Se, and the like. N-type dopants such as Te and the like may be doped. The roughness pattern 166a may be formed on the top surface of the first conductive semiconductor layer 166 to increase light extraction efficiency.

A conductive clad layer may be formed between the active layer 164 and the first conductive semiconductor layer 166, or between the active layer 164 and the second conductive semiconductor layer 162. The layer may be formed of an AlGaN-based semiconductor.

The first electrode 170 is disposed on the upper surface of the light emitting structure 160 to supply power to the first conductive semiconductor layer 166. The first electrode 170 may have a predetermined pattern shape. In addition, a roughness pattern (not shown) may be formed on the top surface of the first electrode 170 to increase light extraction efficiency.

The passivation layer 180 may be disposed on the side of the light emitting structure 160 to electrically protect the light emitting structure 160. For example, the passivation layer 180 may be disposed to surround side surfaces of the second conductive semiconductor layer 162, the active layer 164, and the first conductive semiconductor layer 166. The passivation layer 180 is an insulating material, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , to be formed of Al ₂ O ₃ But it is not limited thereto.

1 and 2, the first electrode 170 forms a predetermined pattern on the first conductive semiconductor layer 166. The first electrode 170 may include the external electrodes 171a through 171d disposed along the top edge of the first conductive semiconductor layer 166, and the internal electrodes 172a disposed inside the external electrodes 171a through 171d; 172b and pad portions 173a and 173b.

The external electrodes 171a to 171d may be disposed in a quadrangular shape having four sides along the outer side of the first conductivity type semiconductor layer 166. The internal electrodes 172a and 172b may be disposed inside the external electrodes 171a to 171d to be connected to respective sides of the external electrodes 171a to 171d. The internal electrodes 172a and 172b may divide the space formed by the external electrodes 171a to 171d into a plurality of sections, and the widths of the sections may be the same or different.

Pad portions 173a and 173b may be disposed on the external electrodes 171a to 171d. For example, the pad parts 173a and 173b may be disposed at vertices of a rectangle formed by the external electrodes 171a to 171d. The pad portions 173a and 173b are connected to a wire for supplying power.

As described above, in this embodiment, the barrier layer 130 is in contact with the second conductivity-type semiconductor layer 162 in some regions, thereby improving adhesion between the light emitting structure 160 and the second electrode and breaking the interface. It can prevent the phenomenon that the reliability of the light emitting device 100 is lowered by preventing the. In addition, the insulating layer 155 prevents the material of the reflective layer 140 from being diffused into the second conductive semiconductor layer 162 and is formed of a light-transmitting insulating material to improve luminous efficiency.

3 is a cross-sectional view illustrating a light emitting device according to another embodiment. The same parts as those of the light emitting device shown in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

The barrier layer 230 is disposed under the reflective layer 140 to contact the second conductive semiconductor layer 162, the insulating layer 255, and the reflective layer 140.

The insulating layer 255 is disposed under the second conductive semiconductor layer 162 and is in contact with the second conductive semiconductor layer 162. The top surface of the insulating layer 255 is in contact with the second conductivity-type semiconductor layer 162, the side surface is in contact with the barrier layer 230 and the ohmic layer 150, and the bottom surface thereof is the barrier layer 230 and the ohmic layer 150. ) And the reflective layer 140. The thickness of the insulating layer 255 may be 2 to 2000 nm.

The insulating layer 255 prevents the reflective layer 140 disposed under the ohmic layer 150 from contacting the second conductive semiconductor layer 162, thereby improving reliability of the light emitting device 200. Ag, which forms the reflective layer 140, is a material that diffuses well. When the material of the reflective layer 140 diffuses into the second conductive semiconductor layer 162 and contacts the active layer 164, a short circuit may occur.

The insulating layer 255 may be disposed to vertically overlap the first electrode 170 and at least a portion of the insulating layer 255 to function as a current blocking layer. In this case, the insulating layer 255 improves the luminous efficiency of the light emitting device 100 by alleviating the phenomenon in which current is concentrated to a specific portion of the light emitting structure 160.

The insulating layer 255 may be formed of an electrically insulating material to form a schottky contact with the second conductive semiconductor layer 162. For example, the insulating layer 255 may include one or more of SiO ₂ , Si ₃ N ₄ , TiOx, Al ₂ O ₃ .

The insulating layer 255 may be made of a transparent material having a light transmittance of 80% or more. Accordingly, the light emitted from the active layer 164 is not absorbed by the insulating layer 255, but is reflected by the reflective layer 140, thereby improving light emission efficiency.

In the present exemplary embodiment, the insulating layer 255 disposed in the center of the light emitting device is formed in two parts spaced apart, and the barrier layer 230 penetrates between the insulating layers 255 so that the second conductive semiconductor layer 162 is formed. Can be contacted with.

The barrier layer 230 may be disposed to vertically overlap the first electrode 170 with at least a portion of the region. The barrier layer 230 may be in ohmic contact or schottky contact with a portion of the barrier layer 230 contacting the second conductivity-type semiconductor layer 162. When the barrier layer 230 is in Schottky contact with the second conductivity-type semiconductor layer 162, the barrier layer 230 functions as a current blocking layer.

The barrier layer 230 prevents the metal ions of the bonding layer 120 from diffusing into the reflective layer 140 and the ohmic layer 150. In addition, the barrier layer 230 may reduce the phenomenon that the reliability of the light emitting device 100 is lowered by improving the adhesion between the light emitting structure 160 and the second electrode and preventing the interface from being broken. For example, the barrier layer 230 includes at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

4 is a cross-sectional view illustrating a light emitting device according to another embodiment. The same parts as those of the light emitting device shown in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

The insulating layer 355 is disposed under the second conductive semiconductor layer 162 and is in contact with the second conductive semiconductor layer 162. The top surface of the insulating layer 355 is in contact with the second conductivity-type semiconductor layer 162, the side surface is in contact with the barrier layer 330 and the ohmic layer 350, and the bottom surface thereof is the barrier layer 330 and the ohmic layer 350. ) And the reflective layer 340. The thickness of the insulating layer 355 may be 2 to 2000 nm.

The insulating layer 355 prevents the reflective layer 340 disposed under the ohmic layer 350 from contacting the second conductive semiconductor layer 162, thereby improving reliability of the light emitting device 300. Ag, which forms the reflective layer 340, is a material that diffuses well. When the material of the reflective layer 340 diffuses into the second conductive semiconductor layer 162 and contacts the active layer 164, a short circuit may occur.

The insulating layer 355 may be disposed to vertically overlap the first electrode 170 and at least some regions to function as a current blocking layer. In this case, the insulating layer 355 may improve the luminous efficiency of the light emitting device 300 by alleviating the phenomenon that current is concentrated in a specific portion of the light emitting structure 160.

The insulating layer 355 may be formed of an electrically insulating material to form a Schottky contact with the second conductive semiconductor layer 162. For example, the insulating layer 355 may include one or more of SiO ₂ , Si ₃ N ₄ , TiOx, Al ₂ O ₃ .

The insulating layer 355 may be made of a transparent material having a light transmittance of 80% or more. Accordingly, light emitted from the active layer 164 is not absorbed by the insulating layer 355, but is reflected by the reflective layer 140, thereby improving light emission efficiency.

The insulating layer 355 disposed in the middle of the light emitting device may be formed in two parts spaced apart from each other, and the barrier layer 330 may pass through the insulating layer 355 to be in contact with the second conductive semiconductor layer 162. .

The barrier layer 330 is disposed under the reflective layer 340 and is in contact with the second conductive semiconductor layer 162, the insulating layer 355, and the reflective layer 340. In this embodiment, the barrier layer 330 is shown to be in contact with the second conductivity-type semiconductor layer 162 through the insulating layer 355, but as shown in FIG. 2, the bottom surface of the insulating layer 155 is shown. It may also be in contact with.

The barrier layer 330 prevents the metal ions of the bonding layer 120 from diffusing into the reflective layer 340 and the ohmic layer 350. In addition, the barrier layer 330 may reduce the phenomenon that the reliability of the light emitting device 300 is reduced by improving the adhesion between the light emitting structure 160 and the second electrode and preventing the interface from being broken. For example, the barrier layer 330 includes at least one of Ni, Pt, Ti, W, V, Fe, and Mo, and may be a single layer or a multilayer.

The reflective layer 340 is disposed on the barrier layer 330. The reflective layer 340 reflects light incident from the light emitting structure 160, thereby improving light extraction efficiency of the light emitting device 100. For example, the reflective layer 340 may be formed of a metal including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf or an alloy thereof.

The ohmic layer 350 is disposed between the reflective layer 340 and the light emitting structure 160. The ohmic layer 350 is in ohmic contact with the light emitting structure 160, for example, the second conductive semiconductor layer 162, so that power is smoothly supplied from the second electrode to the light emitting structure 160.

For example, the ohmic layer 350 may include at least one of In, Zn, Sn, Ni, Pt, and Ag. In addition, the ohmic layer 350 may selectively use a transparent conductive layer and a metal. For example, the ohmic layer 350 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag, Ni / IrOx / Au, and Ni / IrOx / Au / It includes one or more of ITO and can be implemented in a single layer or multiple layers.

In this embodiment, the diffusion barrier layer 357 is disposed between the reflective layer 340 and the ohmic layer 350. The diffusion barrier layer 357 may be formed of a light transmissive insulating material, for example, ZnO, SiO ₂ , SiON, Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ Or the like. The diffusion barrier layer 357 reduces the penetration of the ions (eg, Ag ions) of the reflective layer 340 into the second conductive semiconductor layer 162 through the ohmic layer 350, thereby increasing the reliability of the light emitting device 100. Can improve.

The diffusion barrier layer 357 may be in the form of a plurality of spaced dots, the shape may be a variety of shapes, such as polygonal, circular, oval. The diffusion barrier layer 357 may improve adhesion between the reflective layer 340 and the ohmic layer 350. The diffusion barrier layer 357 may have a thickness of about 0.5 nm to about 1000 nm.

5 shows a light emitting device package according to an embodiment.

The light emitting device package 400 includes a package body 410, lead frames 412 and 414, a light emitting device 420, a reflecting plate 425, a wire 430, and a resin layer 440.

A cavity may be formed on an upper surface of the package body 410. The side wall of the cavity may be formed obliquely. The package body 410 may be formed of a substrate having good insulation or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like. It may have a structure in which a plurality of substrates are stacked. Embodiments are not limited to the material, structure, and shape of the package body 310.

The lead frames 412 and 414 are disposed on the package body 410 to be electrically separated from each other in consideration of heat dissipation or mounting of light emitting devices. The light emitting element 420 is electrically connected to the lead frames 412 and 414. The light emitting device 420 may be the light emitting device shown in the embodiment of FIGS. 1 to 4.

The reflective plate 425 is formed on the side wall of the cavity of the package body 410 to direct light emitted from the light emitting element in a predetermined direction. The reflector plate 425 is made of a light reflective material and may be, for example, a metal coating or a metal flake.

The resin layer 440 surrounds the light emitting device 420 located in the cavity of the package body 410 to protect the light emitting device 420 from the external environment. The resin layer 440 may be made of a colorless transparent polymer resin material such as epoxy or silicon. The resin layer 440 may include a phosphor to change the wavelength of the light emitted from the light emitting element 420.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package.

Yet another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp. .

6 is a view showing an embodiment of a lighting device having a light emitting module.

The lighting device may include a light emitting module 20 and a light guide 30 for guiding the emission directivity angle of the light emitted from the light emitting module 20.

The light emitting module 20 may include at least one light emitting device 22 provided on a printed circuit board (PCB) 21, and the plurality of light emitting devices 22 may include a printed circuit board 21. May be spaced apart). The light emitting device may be, for example, a light emitting diode (LED).

The light guide 30 focuses the light emitted from the light emitting module 20 so that the light guide 30 may be emitted through the opening with a predetermined direction angle, and may have a mirror surface on the inner surface. Here, the light emitting module 20 and the light guide may be installed spaced apart by a predetermined interval (d).

As described above, the lighting apparatus may be used as an illumination lamp that focuses a plurality of light emitting elements 22 to obtain light, and is particularly embedded in a ceiling or a wall of the building to expose the opening side of the light guide 30. It is available by purchase light (downlight).

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: support member 120: bonding layer
130: barrier layer 140: reflective layer
150: ohmic layer 155: insulating layer
160: light emitting structure 162: second conductive semiconductor layer
164: active layer 166: first conductive semiconductor layer
166a: Roughness 170: First Electrode
171a, 171b, 171c, 171d: external electrode 172a, 172b: internal electrode
173a, 173b: Pad portion 180: Passivation layer
230: barrier layer 255: insulating layer
330: barrier layer 340: reflective layer
350: ohmic layer 355: insulating layer
357: diffusion barrier layer 400: light emitting device package
410: package body 412, 414: lead frame
420: light emitting element 425: reflector
430 wire 440: filling material

Claims (16)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
An insulating layer disposed under the second conductive semiconductor layer and in contact with the second conductive semiconductor layer;
An ohmic layer disposed under the second conductive semiconductor layer and in contact with the second conductive semiconductor layer and the insulating layer;
A reflective layer disposed under the ohmic layer and in contact with the ohmic layer and the insulating layer; And
A barrier layer formed of a metal material disposed under the second conductive semiconductor layer or the reflective layer and in contact with the second conductive semiconductor layer, the insulating layer, and the reflective layer;
Light emitting device comprising a. The method of claim 1,
The insulating layer has a light transmittance of 80% or more. The method of claim 1,
The upper surface of the insulating layer is in contact with the second conductive semiconductor layer, the side surface is in contact with the barrier layer and the ohmic layer, the lower surface is in contact with the barrier layer, the ohmic layer and the reflective layer. The method of claim 2,
The insulating layer has a thickness of 2 to 2000nm. The method of claim 2,
The insulating layer comprises at least one of SiO ₂ , Si ₃ N ₄ , TiOx, Al ₂ O ₃ . The method of claim 1,
The barrier layer includes at least one of Ni, Pt, Ti, W, V, Fe, Mo. The method of claim 1,
A first electrode formed on the light emitting structure and in contact with the first conductive semiconductor layer;
More,
The insulating layer has a light emitting device in which at least a portion of the insulating layer and the first electrode vertically overlap. The method of claim 2,
The ohmic layer includes at least one of In, Zn, Sn, Ni, Pt, Ag. The method of claim 2,
The reflective layer includes at least one of Ag, Al, Pt, Rh. The method of claim 2,
A light emitting device comprising a bonding layer below the barrier layer and a support member below the bonding layer. The method of claim 1,
A diffusion barrier layer disposed between the ohmic layer and the reflective layer and made of a light-transmitting insulating material;
Light emitting device further comprising. The method of claim 1,
The reflective layer is composed of two or more reflective layers spaced apart. The method of claim 12,
Both ends of the reflective layer are in contact with the insulating layer. The method according to any one of claims 1 to 13,
A passivation layer disposed on a side of the light emitting structure;
Light emitting device further comprising. The method according to any one of claims 1 to 13,
A light emitting device having roughness formed on an upper surface of the first conductive semiconductor layer. Package body;
The light emitting device according to any one of claims 1 to 13 provided on the package body;
A lead frame provided in the package body and electrically connected to the light emitting device; And
A resin layer surrounding the light emitting element;
Emitting device package.

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