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KR20120081660A - Photomask - Google Patents

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KR20120081660A
KR20120081660A KR1020100130412A KR20100130412A KR20120081660A KR 20120081660 A KR20120081660 A KR 20120081660A KR 1020100130412 A KR1020100130412 A KR 1020100130412A KR 20100130412 A KR20100130412 A KR 20100130412A KR 20120081660 A KR20120081660 A KR 20120081660A
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width
pattern
photomask
transmission portion
exposure
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KR101293169B1 (en
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구찬규
이용인
강현욱
신준식
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 포토마스크에 관한 것으로, 투명기판상에 형성되는 적어도 1 이상의 차광패턴과 상기 차광패턴 사이에 형성되는 제1투과부 및 상기 제1투과부에 비해 상대적로 좁은 폭을 가지는 제2투과부를 구비하며, 상기 제1투과부에 구현되는 0.5~5㎛의 선폭을 가지는 보상패턴이 적어도 1 이상 형성되는 구조를 구비하는 것을 특징으로 한다.
본 발명에 따르면, 대면적 포토마스크의 대형 패턴(투광부)의 영역에 보조패턴을 삽입하여 노광량의 균일도를 밸런싱(balancing)하여 패턴 폭에 따른 노광량의 균일도를 향상시킴으로써, 대면적 포토마스크에 구현되는 대형 패턴과 소형 패턴의 선폭(CD)가 다르게 나오는 편차문제를 해소할 수 있는 효과가 있다.The present invention relates to a photomask, and includes at least one or more light blocking patterns formed on a transparent substrate and a first transmission portion formed between the light shielding patterns and a second transmission portion having a relatively narrow width compared to the first transmission portion. And at least one compensation pattern having a line width of 0.5 to 5 μm implemented in the first transmission unit.
According to the present invention, by inserting the auxiliary pattern in the area of the large pattern (light transmitting part) of the large area photomask, the uniformity of the exposure amount is balanced to improve the uniformity of the exposure amount according to the pattern width, thereby realizing the large area photomask. There is an effect that can solve the deviation problem that the line width (CD) of the large pattern and the small pattern is different.

Description

포토마스크{Gray tone mask}Photomask {Gray tone mask}

본 발명은 대면적 기판에 적용가능한 포토마스크에 관한 것이다.The present invention relates to a photomask applicable to a large area substrate.

오늘날 액정표시장치(LCD), 유기전계 발광 소자(OLED), 플라즈마 디스플레이 패널(PDP), 전계 발광소자(FED) 등의 평판 디스플레이(FPD) 제품은 시장의 요구가 고급화, 고기능화 됨에 따라 그 응용 범위가 확대되면서, 우수한 제조 공정 기술의 개발이 요구되고 있다.Today's flat panel display (FPD) products, such as liquid crystal display (LCD), organic light emitting diode (OLED), plasma display panel (PDP), and electroluminescent display (FED), have a range of application as the market demands are advanced and advanced. As is expanding, the development of excellent manufacturing process technology is required.

일반적으로 TFT-LCD 등의 평판 디스플레이 제조시 패턴이 형성된 포토마스크를 사용하는 리소그래피 공정이 사용되고 있으며 최근 원가 절감과 수율 향상을 위하여 마스크 단축 공정을 사용하는 기술이 개발, 적용되고 있다.In general, a lithography process using a patterned photomask is used to manufacture a flat panel display such as a TFT-LCD. Recently, a technique of using a mask shortening process has been developed and applied for cost reduction and yield improvement.

도 1은 종래의 포토마스크를 이용하여 LCD 기판에 포토레지스트를 패터닝하는 공정을 도시한 개념도이다.1 is a conceptual diagram illustrating a process of patterning a photoresist on an LCD substrate using a conventional photomask.

도시된 것과 같이, 포토마스크는 투명기판(10)에 차광패턴(20)이 다수 구현되며, 차광패턴과 차광패턴의 사이에는 광이 투과되는 투과부가 일정한 선폭(a, b)을 가지고 다양하게 구현되게 된다. 즉, 포토마스크는 LCD에 구현하고자 하는 패턴과 동일한 패턴으로 제작하여 LCD 제조에 적용되게 된다. 그러나 점차 기판의 대면적화가 현실로 다가오면서, 노광시 발생하는 노광편차가 제품품질의 변수로 떠오르고 있다.As shown, the photomask has a plurality of light shielding patterns 20 are implemented on the transparent substrate 10, the transmission portion through which light is transmitted between the light shielding pattern and the light shielding pattern has a variety of line width (a, b) is implemented in various ways Will be. That is, the photomask is manufactured in the same pattern as the pattern to be implemented in the LCD and applied to the LCD manufacturing. However, as the area of the substrate becomes larger and larger, the exposure deviation generated during exposure is becoming a variable of product quality.

즉, 투과부가 넓은 패턴의 경우, 노광에너지량이 많아지게 되어 노광편차가 심해지는 문제가 발생하게 된다. 즉, 도시된 도면에서 포토마스크의 투과부의 폭(a) 부분을 통해 노광되어 LCD 글라스(30)와 TFT 층(40) 상에 포토레지스트(50)를 패터닝하는 경우, 노광되는 영역의 폭(A)에 편차가 발생하게 되며, 이는 투과부의 폭이 상대적으로 작은 부분의 편차(부호 b의 폭과 B의 편차)보다 노광에너지가 많이 노출되어 편차가 커지는 문제가 발생한다.That is, in the case of a pattern having a wide transmissive portion, the amount of exposure energy increases, resulting in a problem that the exposure deviation increases. That is, in the illustrated drawing, when the photoresist 50 is patterned on the LCD glass 30 and the TFT layer 40 by being exposed through the width a portion of the transmissive portion of the photomask, the width A of the exposed area A ), And this causes a problem in that the exposure energy is exposed more than the deviation (the width of the sign b and the width of B) of the portion where the width of the transmission portion is relatively small.

즉, 각 투광부에 대응되는 노광영역의 폭간의 편차는 다음과 같은 식을 만족하게 된다.That is, the deviation between the widths of the exposure areas corresponding to the light transmitting parts satisfies the following equation.

Figure pat00001
Figure pat00001

일반적으로는 이러한 편차를 보상한 값을 가지는 마스크로 제작을 하여 이러한 편차의 문제를 해결하고자 하는 시도가 있으나, 이는 대면적 LCD의 제조시 패턴이 항상 수정되어야 하는 문제가 발생하게 된다.In general, there is an attempt to solve the problem of such a deviation by making a mask having a value that compensates for such a deviation, but this causes a problem that the pattern should always be corrected when manufacturing a large area LCD.

본 발명은 상술한 문제를 해결하기 위하여 안출된 것으로, 본 발명의 목적은 대면적 포토마스크의 대형 패턴(투광부)의 영역에 보조패턴을 삽입하여 노광량의 균일도를 밸런싱(balancing)하여 패턴 폭에 따른 노광량의 균일도를 향상시킴으로써, 대면적 포토마스크에 구현되는 대형 패턴과 소형 패턴의 선폭(CD)가 다르게 나오는 편차문제를 해소할 수 있는 포토마스크를 제공하는 데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object of the present invention is to insert an auxiliary pattern into an area of a large pattern (transmitter) of a large-area photomask to balance the uniformity of the exposure dose to the pattern width. By improving the uniformity of the exposure dose, it is to provide a photomask that can solve the deviation problem that the line width (CD) of the large pattern and the small pattern implemented in the large area photomask is different.

상술한 과제를 해결하기 위한 수단으로서, 본 발명은 투명기판상에 형성되는 적어도 1 이상의 차광패턴; 상기 차광패턴 사이에 형성되는 제1투과부 및 상기 제1투과부에 비해 상대적로 좁은 폭을 가지는 제2투과부; 상기 제1투과부에 구현되는 0.5~5㎛의 선폭을 가지는 보상패턴이 적어도 1 이상 구비되는 포토마스크를 제공할 수 있도록 한다.As a means for solving the above problems, the present invention is at least one light-shielding pattern formed on a transparent substrate; A first transmission portion formed between the light blocking patterns and a second transmission portion having a relatively narrow width compared to the first transmission portion; It is possible to provide a photomask having at least one compensation pattern having a line width of 0.5 to 5㎛ implemented in the first transmission portion.

또한, 본 발명에 따른 포토마스크는, 상기 투과부의 폭(a)와 상기 투과부를 통해 노광되는 LCD 글라스상의 노광영역의 폭(A)이 동일하도록 보상패턴을 구현할 수 있다.In addition, the photomask according to the present invention may implement a compensation pattern such that the width (a) of the transmission portion and the width (A) of the exposure area on the LCD glass exposed through the transmission portion are the same.

또한, 상기 포토마스크는, 상기 제1투과부의 폭(a)과, 상기 제1투과부에 비해 상대적으로 좁은 폭이 형성되는 제2투과부의 폭(b)을 구비하며, 상기 제1투과부 및 제2투과부를 통해 노광되는 LCD 글라스 상의 제1노광역역의 폭(A) 및 제2노광역역의 폭(B) 사이에는 하기의 식 1을 충족하도록 구현할 수 있다.In addition, the photomask includes a width a of the first transparent part and a width b of a second transparent part having a relatively narrower width than the first transparent part, wherein the first transparent part and the second transparent part are formed. The width A of the first exposure area and the width B of the second exposure area on the LCD glass exposed through the transmission part may be implemented to satisfy Equation 1 below.

{식 1}{1}

Figure pat00002
Figure pat00002

상술한 본 발명에 따른 포토마스크의 상기 보조패턴은, 노광기의 해상력보다 낮은 선폭의 패턴으로 구현될 수 있으며, 특히 Cr, Ni, Ti, Al, Ta 중 어느 하나, 또는 이들 중 선택되는 물질에 O,N, COx, NOx이 결합한 물질로 구성될 수 있다.The auxiliary pattern of the photomask according to the present invention described above, may be implemented in a pattern having a line width lower than the resolution of the exposure machine, in particular, any one of Cr, Ni, Ti, Al, Ta, or a material selected from these , N, CO x , NO x may be composed of a combined material.

본 발명에 따르면, 대면적 포토마스크의 대형 패턴(투광부)의 영역에 보조패턴을 삽입하여 노광량의 균일도를 밸런싱(balancing)하여 패턴 폭에 따른 노광량의 균일도를 향상시킴으로써, 대면적 포토마스크에 구현되는 대형 패턴과 소형 패턴의 선폭(CD)가 다르게 나오는 편차문제를 해소할 수 있는 효과가 있다.According to the present invention, by inserting the auxiliary pattern in the area of the large pattern (light transmitting part) of the large area photomask, the uniformity of the exposure amount is balanced to improve the uniformity of the exposure amount according to the pattern width, thereby realizing the large area photomask. There is an effect that can solve the deviation problem that the line width (CD) of the large pattern and the small pattern is different.

도 1은 종래의 포토마스크의 노광공정의 문제를 도시한 개념도이다.
도 2는 본 발명에 다른 포토마스크의 노광공정을 도시한 개념도이다.1 is a conceptual diagram illustrating a problem of an exposure process of a conventional photomask.
2 is a conceptual diagram illustrating an exposure process of a photomask according to the present invention.

이하에서는 첨부한 도면을 참조하여 본 발명에 따른 구성 및 작용을 구체적으로 설명한다. 첨부 도면을 참조하여 설명함에 있어, 도면 부호에 관계없이 동일한 구성요소는 동일한 참조부여를 부여하고, 이에 대한 중복설명은 생략하기로 한다. 제1, 제2 등의 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 상기 구성요소들은 상기 용어들에 의해 한정되어서는 안 된다. 상기 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다.Hereinafter, with reference to the accompanying drawings will be described in detail the configuration and operation according to the present invention. In the description with reference to the accompanying drawings, the same components are given the same reference numerals regardless of the reference numerals, and duplicate description thereof will be omitted. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

본 발명은 액정표시장치(LCD)를 제작하기 위한 포토마스크 노광공정의 노광편차를 해소하기위해 패턴의 폭이 넓은 폭에 미세한 보조패턴을 삽입하여 노광량의 균일도를 보정할 수 있도록 하는 것을 기술의 요지로 한다.
Summary of the Invention The present invention provides a method for correcting the uniformity of exposure dose by inserting a fine auxiliary pattern into a wide width of a pattern in order to eliminate the exposure deviation of a photomask exposure process for manufacturing a liquid crystal display (LCD). Shall be.

도 2는 본 발명에 따른 포토마스크의 노광공정의 개념도이다.2 is a conceptual diagram of an exposure process of a photomask according to the present invention.

도시된 것과 같이, 본 발명에 따른 포토마스크(X)는 LCD(Y)의 표면에 포토레지스트에 패턴을 구현하는 공정을 노광을 통해 구현하게 된다. 도시된 것과 같이 본 발명에 따른 포토마스크는, 투명기판(10) 상에 형성되는 적어도 1 이상의 차광패턴(20)을 구비하고 있으며, 이웃하는 차광패턴(20A, 20B) 사이에 형성되는 제1투과부(폭 a)를 구비하게 된다. 물론, 이외에도 상기 제1투과부에 비해 상대적으로 좁은 폭을 가지는 제2투과부(폭 b)가 다수 구현될 수 있다. 상기 제1 및 제2투과부는 패턴 폭의 차이가 있는 투과부를 예시하기 위해 기준을 설정한 것이며, 본 발명에 따는 포토마스크에는 다수의 투과부가 구현될 수 있음은 당업자에게 자명하다 할 것이다.As shown, the photomask X according to the present invention implements a process of implementing a pattern on the photoresist on the surface of the LCD Y through exposure. As shown, the photomask according to the present invention includes at least one light shielding pattern 20 formed on the transparent substrate 10, and includes a first transparent part formed between neighboring light shielding patterns 20A and 20B. (Width a) is provided. Of course, in addition to the first transparent portion, a plurality of second transparent portions (b) having a relatively narrow width may be implemented. The first and second transmission parts are based on a standard for illustrating transmission parts having a difference in pattern width, and it will be apparent to those skilled in the art that a plurality of transmission parts can be implemented in the photomask according to the present invention.

이 경우, 투과부의 폭이 넓을 수록 종래기술에서 설명한 것과 같이 노광량이 많아져, 하부에 배치되는 LCD 글라스(30) 및 TFT 층의 상부에 적층된 포토레지스트(150)에 형성되는 노광영역의 폭(A)에 편차가 발생하게 되어, 정밀한 패턴을 구현하지 못하게 되는바, 이러한 편차를 보상하기 위해, 본 발명에 따른 제1투과부에는 적어도 1 이상의 보상패턴(21)을 구현하며, 특히 상기 보상패턴(21)은 패턴 선폭이 0.5㎛~5㎛의 선폭을 가지도록 함이 바람직하다. 이러한 보상패턴의 선폭이 5㎛를 초과하는 경우에는 도 1에서 설명한 것과 같은 노광에 따른 편차를 해소하기 어려우며, 0.5㎛ 미만의 경우에는 LCD 글라스 상에 전사된 패턴에 이미지가 생기지 않게 된다. 따라서, 본 발명에 따른 보상패턴은 노광기의 해상력보다 낮은 선폭의 패턴으로 구현됨이 바람직하다.In this case, the wider the transmissive portion, the greater the exposure amount as described in the prior art, and the width of the exposure area formed in the LCD glass 30 disposed below and the photoresist 150 stacked on the TFT layer ( Since a deviation occurs in A), and the precise pattern cannot be realized, in order to compensate for the deviation, at least one compensation pattern 21 is implemented in the first transmission part according to the present invention, and in particular, the compensation pattern ( 21) it is preferable that the pattern line width to have a line width of 0.5㎛ ~ 5㎛. When the line width of the compensation pattern exceeds 5 μm, it is difficult to eliminate the deviation due to exposure as described in FIG. 1, and when the line width is less than 0.5 μm, the image is not generated in the pattern transferred on the LCD glass. Therefore, the compensation pattern according to the present invention is preferably implemented with a pattern having a line width lower than the resolution of the exposure machine.

즉, 본 발명이 포토마스크의 보상패턴의 구비된 투과부의 폭(a)과 LCD 글라스 상에 구현되는 노광영역의 폭(A)이 동일하게 구현되는 것이 가장 바람직하다.That is, it is most preferable that the present invention implements the same width (a) of the exposure area implemented on the LCD glass and the width (a) of the transmission portion provided in the compensation pattern of the photomask.

따라서, 상기 제1투과부의 폭(a)과, 상기 제1투과부에 비해 상대적으로 좁은 폭이 형성되는 제2투과부의 폭(b)을 구비하며, 상기 제1투과부 및 제2투과부를 통해 노광되는 LCD 글라스상의 제1노광역역의 폭(A) 및 제2노광역역의 폭(B) 사이에는 하기의 관계가 충족됨이 바람직하다.Accordingly, the first transparent portion has a width a and a width b of the second transparent portion having a relatively narrower width than that of the first transparent portion, and is exposed through the first transparent portion and the second transparent portion. It is preferable that the following relationship is satisfied between the width A of the first wide area and the width B of the second wide area on the LCD glass.

{식 1}{1}

Figure pat00003
Figure pat00003

아울러, 상기 Cr, Ni, Ti, Al, Ta 중 어느 하나, 또는 이들 중 선택되는 물질에 O,N, COx, NOx이 결합한 물질로 구성됨이 바람직하다. 물론, 반드시 여기에 한정되는 것은 아니며, 더욱 구체적으로는, 탄탈륨(Ta), 코발트(Co), 텅스텐(W), 몰리브덴(Mo), 크롬(Cr), 바나듐(V), 팔라듐(Pd), 티타늄(Ti), 플랫티늄(Pt), 망간(Mn), 철(Fe), 실리콘(Si), 니켈(Ni), 카드늄(Cd), 지르코늄(Zr), 마그네슘(Mg), 리튬(Li) 셀렌(Se), 구리(Cu), 이트륨(Y), 황(S), 인듐(In), 주석(Sn), 게르마늄(Ge) 중 어느 하나 이상을 주성분으로 하는 반투과물질로 구현될 수 있으며, 이들 중 선택되는 어느 하나에 산소(O), 질소(N), 보론(B), 불소(F), 염소(Cl), 수소(H) 성분 중 어느 하나 이상이 더 포함된 물질로 구성될 수 있다.In addition, it is preferable that any one of the Cr, Ni, Ti, Al, Ta, or a material selected from these O, N, CO x , NO x is composed of a material combined. Of course, it is not necessarily limited thereto, and more specifically, tantalum (Ta), cobalt (Co), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), Titanium (Ti), Platinum (Pt), Manganese (Mn), Iron (Fe), Silicon (Si), Nickel (Ni), Cadmium (Cd), Zirconium (Zr), Magnesium (Mg), Lithium (Li) It can be implemented as a semi-permeable material based on any one or more of selenium (Se), copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), germanium (Ge) And any one or more of oxygen (O), nitrogen (N), boron (B), fluorine (F), chlorine (Cl), and hydrogen (H) components may be further selected. Can be.

본 발명은 대형 액정표시장치의 노광장치로부터의 광원이 감광성 물질을 노광할때 패턴의 크기에 따른 노광량의 차이가 발생함에 따라 노광의 균일도(Uniformity)가 나빠짐에 따라 불량의 증가 및 공정의 안정화를 저해하는 문제를 해소하여 대면적 패턴의 경우 노광량을 절감할 수 있는 보상패턴을 구현하고, 이를 통해 노광 균일도(Uniformity)를 확보하고 높은 수율 및 제작비용을 절감할 수 있도록 하는 장점을 구현할 수 있게 된다.According to the present invention, when a light source from an exposure apparatus of a large liquid crystal display exposes a photosensitive material, a difference in exposure amount according to the size of a pattern occurs, resulting in an increase in defects and stabilization of a process as the uniformity of exposure becomes worse. In order to solve the problem of impairment, a large-area pattern can realize a compensation pattern that can reduce the exposure amount, thereby realizing the advantages of ensuring exposure uniformity and reducing high yield and manufacturing cost. .

10: 투명기판
20: 차광패턴
21: 보상패턴
30: LCD 글라스
40: TFT 층
50: 포토레지스트10: transparent substrate
20: shading pattern
21: Compensation Pattern
30: LCD glass
40: TFT layer
50: photoresist

Claims (5)

투명기판상에 형성되는 적어도 1 이상의 차광패턴;
상기 차광패턴 사이에 형성되는 제1투과부 및 상기 제1투과부에 비해 상대적로 좁은 폭을 가지는 제2투과부;
상기 제1투과부에 구현되는 0.5~5㎛의 선폭을 가지는 보상패턴이 적어도 1 이상 구비되는 포토마스크.
At least one light blocking pattern formed on the transparent substrate;
A first transmission portion formed between the light blocking patterns and a second transmission portion having a relatively narrow width compared to the first transmission portion;
A photomask having at least one compensation pattern having a line width of 0.5 ~ 5㎛ implemented in the first transmission portion.
청구항 1에 있어서,
상기 투과부의 폭(a)와 상기 투과부를 통해 노광되는 LCD 글라스상의 노광영역의 폭(A)이 동일한 포토마스크.
The method according to claim 1,
A photomask having a width a of the transmissive part and a width A of an exposure area on the LCD glass exposed through the transmissive part.
청구항 1에 있어서,
상기 포토마스크는,
상기 제1투과부의 폭(a)과, 상기 제1투과부에 비해 상대적으로 좁은 폭이 형성되는 제2투과부의 폭(b)을 구비하며,
상기 제1투과부 및 제2투과부를 통해 노광되는 LCD 글라스 상의 제1노광역역의 폭(A) 및 제2노광역역의 폭(B) 사이에는 하기의 관계가 충족되는 포토마스크.
{식 1}
Figure pat00004

The method according to claim 1,
The photomask,
A width a of the first permeable part and a width b of the second permeable part having a relatively narrower width than that of the first permeable part;
A photomask in which the following relationship is satisfied between the width A of the first wide area and the width B of the second wide area on the LCD glass exposed through the first and second transparent parts.
{Equation 1}
Figure pat00004

 청구항 1 내지 3 중 어느 한 항에 있어서,
상기 보조패턴은,
노광기의 해상력보다 낮은 선폭의 패턴으로 구현되는 포토마스크.
4. The method according to any one of claims 1 to 3,
The auxiliary pattern,
Photomask implemented with a pattern of line width lower than the resolution of the exposure machine.
청구항 4에 있어서,
상기 보상패턴은,
Cr, Ni, Ti, Al, Ta 중 어느 하나, 또는 이들 중 선택되는 물질에 O,N, COx, NOx이 결합한 물질로 구성되는 포토마스크.The method of claim 4,
The compensation pattern is,
A photomask comprising one of Cr, Ni, Ti, Al, Ta, or a material in which O, N, COx, and NOx are bonded to a material selected from these.
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