KR20090030318A - Magnetic head and magnetic memory - Google Patents

Abstract

Provided is a magnetic head including a spin valve magnetoresistive element having a laminated ferry structure having improved performance.

The magnetic head is disposed on the substrate having the air bearing surface and perpendicular to the air bearing surface above the substrate, and defines the element height in the vertical direction thereof, and is formed in the ferromagnetic layer to rotate the magnetization direction according to the external magnetic field. A first intermediate layer arranged in parallel with the free layer, the reference layer formed in the ferromagnetic layer, and between the free layer and the reference layer to magnetically separate both layers, and parallel to the reference layer. In addition, it is also arranged on the opposite side of the free layer, formed in the ferromagnetic layer, the pin height of the element height direction is longer than the reference layer, and disposed between the reference layer and the pin layer, laminated ferrite structure with the reference layer, the pin layer It has a second intermediate layer constituting the structure and the anti-ferromagnetic layer laminated on the fin layer to fix the magnetization direction of the fin layer, the free layer, the reference layer, and the pin layer form a spin valve magnetoresistive effect element. The.

Description

Magnetic head {MAGNETIC HEAD}

The present invention relates to a magnetic head, and more particularly, to a magnetic head including a spin valve magnetoresistive effect element as a reproducing (reading) head.

The writing head of the magnetic head is usually composed of an induction magnetic head. The inductive magnetic head can also be used as a reproduction head. In that case, the detected physical quantity becomes a time variation of the magnetic flux density and depends on the relative speeds of the magnetic recording medium and the magnetic head. As the relative speed changes, the sensitivity changes.

Magneto-resistance (MR) is a phenomenon in which electrical resistance changes in accordance with an external magnetic field. Anisotropic magneto-resistance (AMR) is a phenomenon in which electrical resistance changes depending on the direction and intensity of an external magnetic field. If an anisotropic magnetoresistive (AMR) effect element is used as the reproduction head, the reproduction output does not depend on the relative speeds of the magnetic recording medium and the magnetic head. A magnetic head suitable for miniaturization and high recording density of the magnetic recording medium can be constituted.

 The description in the prior art section of Patent No. 2,786,601 describes a regeneration head utilizing a giant magneto-resistance (GMR) effect. The spin valve magnetoresistance sensor of the GMR element, in which two ferromagnetic layers separated by a nonmagnetic metal layer, is used as a pinned layer of magnetization and the other is a free layer in which the magnetization orientation can freely rotate. It should be pointed out that the magnetization direction of the free layer is affected by the magnetization of the free layer, while the magnetization of the free layer should be oriented parallel to the disk surface.

Japanese Laid-Open Patent Publication No. 2004-335071 discloses a spin valve magnetoresistance in a CPP (current perpendicular to the plane) structure in which a spin valve magnetoresistive sensor is inserted between a pair of shield layers to flow current between the shield layers. It is proposed to electrically connect the device to the shield layer through a larger area nonmagnetic metal film.

Japanese Laid-Open Patent Publication No. 2004-118978 suppresses the magnetization direction of the fin layer from tilting due to disturbance by making the height of the medium facing direction of the fin layer higher than the height of the medium facing direction of the free layer in the CPP type spin valve magnetoresistive element. Suggest to do.

Japanese Laid-Open Patent Publication No. 2005-302846 has a height of antiferromagnetic and fin layers in a spin valve in which an antiferromagnetic layer, a fin layer, a nonmagnetic layer, and a free layer are laminated. It is proposed to reduce the leakage magnetic field applied from the pinned layer to the free layer by making the dimension in the longitudinal direction larger than the dimension in the height longitudinal direction of the free layer.

Japanese Patent No. 2786601 discloses a pair of Ni-Fe ferromagnetic films in which a fin layer of a spin valve magnetoresistive sensor is combined with an antiferromagnetic bonding film formed on a Ru layer having a thickness of 0.3 nm to 0.6 nm, and a pair of It is proposed to configure the antiferromagnetic film that fixes the magnetization direction of one of the ferromagnetic films. It is described that by making the two ferromagnetic films magnetized in antiparallel to have substantially the same thickness, the two magnetic moments are almost eliminated and a dipole magnetic field adversely affecting the free layer is basically absent.

This configuration is called a laminated ferry structure, and the layer in which the magnetization direction is fixed by the antiferromagnetic material is called the pin layer, and the layer which forms the antiferromagnetic bond with the fin layer is called a reference layer.

In Japanese Laid-Open Patent Publication No. 2006-13430, in the magnetoresistive sensor of a laminated ferry structure, in order to cancel the influence of the reference layer and the fin layer on the free layer, the product of the fin thickness and the saturation magnetic flux intensity are reduced. Is proposed to be larger than the product of the film thickness of the reference layer and the saturation magnetic flux intensity.

Patent Document 1: Japanese Patent No. 2786601,

Patent Document 2: Japanese Unexamined Patent Publication No. 2004-335071

Patent Document 3: Japanese Unexamined Patent Publication No. 2004-118978

Patent Document 4: Japanese Unexamined Patent Publication No. 2005-302846

Patent Document 5: Japanese Laid-Open Patent Publication No. 2006-13430

An object of the present invention is to provide a structure in which a spin valve magnetoresistive element of a laminated ferry structure can reduce the adverse effects of magnetization of a pin layer and a reference layer on the magnetization of a free layer.

Another object of the present invention is to provide a magnetic head including a spin valve magnetoresistance effect element having a laminated ferry structure with improved performance.

According to 1 aspect of this invention,

A substrate having an air bearing face,

A free layer disposed above the substrate, perpendicular to the air bearing surface, defining element height in the vertical direction thereof, formed in the ferromagnetic layer, and capable of rotating the magnetization direction in accordance with an external magnetic field;

A reference layer disposed parallel to the free layer and formed of a ferromagnetic material;

A first intermediate layer disposed between the free layer and the reference layer to magnetically separate both layers;

A fin layer disposed parallel to the reference layer and opposite to the free layer, formed from a ferromagnetic layer, and having a length in the element height direction longer than the reference layer;

A second intermediate layer disposed between the reference layer and the fin layer to form a stacked ferry structure together with the reference layer and the fin layer;

A magnetic head is provided which is stacked on the fin layer and has an antiferromagnetic layer for fixing the magnetization direction of the fin layer, wherein the ferry layer, the reference layer, and the fin layer constitute a spin valve magnetoresistive effect element.

With respect to the element height direction, the pinned layer is longer than the reference layer, further canceling the influence that both layers have on the free layer.

1A to 1C are perspective views schematically showing a laminated ferry structure according to an embodiment, a side view showing a structure sandwiched between a pair of shield layers, and a length in the element height direction of the fin layer as a reference layer. It is a graph showing the result of computer simulation of the synthesized magnetic fields from the pinned layer and the reference layer applied to the free layer end when the length a (nm) is longer (protruded) than the length in the element height direction.

2 is a top view schematically showing the configuration of the magnetic recording apparatus.

3A and 3B are cross-sectional views schematically showing the structure of the writing / reading head, and a perspective view schematically showing the laminated ferry structure.

4A and 4B (FIGS. 4A-4 to 4Fx and 4Ay to 4Fy) illustrate the main structure method for creating a laminated ferry structure according to an embodiment. It is sectional drawing which shows a process.

5 is a perspective view schematically showing a laminated ferry structure according to the prior art.

6A to 6C are perspective views schematically showing the laminated ferry structure according to the first modification, a side view showing the structure sandwiched by a pair of shield layers, and a length in the element height direction of the fin layer. Graph showing the results of computer simulations of the composite magnetic fields from the pinned layer and the reference layer applied to the free layer end when the length a (nm) longer (protruded) than the element height direction length of the reference layer at a position separated from the reference layer. to be.

7 is a perspective view schematically showing a laminated ferry structure according to the first modification.

8A and 8B (Fig. 8Ax, Fig. 8Bx, Fig. 8Ay and Fig. 8By) according to the first modification. It is sectional drawing which shows the main process of the structural method which produces a laminated ferry structure.

9A and 9B are a perspective view and a cross-sectional view showing the laminated ferry structure according to the second modification.

First, the structure of the large magnetoresistive (GMR) effect type reproducing head of the laminated ferry structure according to the prior art is examined.

FIG. 5 is a perspective view schematically showing a magnetoresistive sensor having a stacked ferry structure according to the prior art disclosed, for example, in Japanese Patent No. 2786601. The pin layer 3 having the fixed magnetization along the element height MRh direction, the reference layer 5 having the antiparallel magnetization direction with respect to the pin layer 3, and the magnetization direction in the absence of an external magnetic field are the core width CW. The free layers 7 which are set in the direction and which can freely rotate the magnetization by an external magnetic field are stacked in parallel with each other, and the element height MRh direction and the core width CW direction are patterned in the same shape. In this configuration, the reference layer 5 is disposed closer to the free layer 7 than the fin layer 3, so that the leakage magnetic field from the reference layer 5 is stronger than the leakage magnetic field from the fin layer 3. ) Will be difficult to avoid. The magnetization of the free layer 7 then inclines from the core width direction to the element height direction under the influence of the composite magnetic field of the leakage magnetic field from the reference layer 5 and the leakage magnetic field from the fin layer. When the magnetization of the free layer 7 is inclined from the core width direction, the readout becomes asymmetrical.

This inventor examined reducing the influence which a reference layer and a fin layer have on a free layer. If the impact from the reference layer can be weakened and the influence from the fin layer can be enhanced, then the overall effect can be weakened. The reference layer 5 and the fin layer 3 form magnetic poles at both ends of the element height direction. If the stimulus is at the same level, the influence of the reference layer close to the free layer will be stronger. By changing the length of the element height direction and changing the height of the magnetic pole, it was examined what change would occur.

FIG. 1A is a perspective view schematically showing a laminated ferry structure according to the first embodiment.

The pin layer 3 having the fixed magnetization along the element height MRh direction, the reference layer 5 having the antiparallel magnetization direction with respect to the pin layer 3, and the free layer 7 freely rotating the magnetization direction are provided. Laminated in parallel with each other. Unlike the configuration of FIG. 5, the free layer 7 and the reference layer 5 are patterned shorter than the fin layer 3 in the element height MRh direction. In other words, the upper magnetic pole of the pinned layer protrudes above the reference layer. The core width along the track width direction is commonly patterned by the fin layer 3, the reference layer 5, and the free layer 7, and is aligned in the same width with respect to the core width direction.

FIG. 1B is a cross-sectional view showing a laminated structure that receives a shield layer sandwiching the laminated ferry structure from both sides in the film thickness direction. As shown in the figure, the MRh direction, the film thickness direction, and the core width direction form a rectangular coordinate system. The pinned layer 3, the reference layer 5, and the free layer 7 are laminated | stacked above the shield layer 1, and the shield layer 9 is formed above. In the drawing of the laminated structure, the lower surface is polished to the same surface and constitutes the air bearing surface ABS. With respect to the element height MRh direction, the height of the pinned layer 3 is set to be a (nm) higher than that of the reference layer 5 and the free layer 7.

1C shows that when the pinned layer has a thickness of 1.6 nm, the reference layer has a thickness of 1.8 nm, the pin layer and the reference layer have a thickness of 0.9 nm, and the reference layer and the free layer have a thickness of 1.0 nm, and the protrusion amount a of the pin layer is changed. It is a graph which shows the result of computer simulation of the synthesized magnetic field from the pinned layer and the reference layer applied to the upper end of the free layer. As shown in FIG. 1B, the fin layer 3 has an upward magnetization, and the reference layer 5 has a downward magnetization. The magnetic field in the element height MRh direction applied to the free layer 7 from the fin layer 3 and the reference layer 5 is calculated. The direction toward the upper surface of the paper is called positive. As the protrusion amount a increases from 0, the synthetic magnetic field decreases from 500Oe, a represents a minimum of about 140Oe at approximately 3 to 4 nm, thereafter increases with an increase of a, and a is approximately at 0 nm a = 0. It becomes about 500Oe as in the case of, and when a is further increased, the synthetic magnetic field is further increased.

This phenomenon is that when the pinned layer protrudes above the reference layer, the pinned layer directly faces the free layer and increases its influence. However, when the amount of protrusion is excessively large, the magnetic poles formed at the ends of the pinned layer are separated from the upper end of the free layer. In other words, it can be thought of as reducing the influence. It is preferable that the amount of protrusion of the pinned layer is 1 nm to 15 nm. Hereinafter, an Example is described based on this result. In addition, the configuration of the hard disk magnetic recording apparatus will be described schematically.

2 schematically shows the configuration of a hard disk magnetic recording apparatus. The hard disk magnetic recording device 220 includes an arm 230 provided with a writing / reading head 110 on the hard disk 224. At the same time as the hard disk 224 is rotated, the write / read head 110 continuously writes the tracks or continuously reads the magnetic records from the tracks. The selection of the track is made by moving the arm 230 in the disc radial direction.

3A is a cross-sectional view schematically showing a structural example of the writing / reading head 110. The lower magnetic shield layer 124 is formed on the nonmagnetic substrate 111, and the insulating layer 125 is formed thereon with the spin valve magnetic read element 126 of the stacked ferry structure. On the insulating layer 125, an auxiliary magnetic pole 112 also serves as an upper magnetic shield layer, and an insulating layer 113 is formed thereon. On the insulating layer 113, a partial coil 114 is formed by forming and patterning a conductive layer, and is embedded in the insulating layer 115. On the insulating layer 115, a main magnetic pole 116 is formed by forming and patterning a magnetic film having a high saturation magnetic flux density. The insulating layer 117 is further formed to fill the main magnetic pole 116. To be connected with the coil 114, the coil 118 of the remaining portion is formed. The insulating protective layer 119 embeds the coil 118 to form a flat surface. The lower surface of the substrate and the lamination on the drawing are polished to form an air bearing surface. The stack is placed perpendicular to the air bearing face.

The hard disk 120 is disposed above the write / read head 110. In the hard disk 120, a soft magnetic contact layer 122 is formed on the substrate 121, and a recording layer 123 is formed thereon. At the time of writing, the magnetic field generated from the main magnetic pole 116 writes to the recording layer 123. The auxiliary magnetic pole 112 forms an auxiliary magnetic path and constitutes a magnetic closed circuit. At the time of reading, the magnetic resistance of the spin valve magnetic reading element 126 of the laminated ferry structure is changed by the magnetic field from the recording layer 123, and the recorded information is read. Although not limiting, the CPP (current perpendicular to the plane) structure in which current flows perpendicularly to the film of the laminated ferry structure using the shield layers 112 and 124 as electrodes is described as an example.

FIG. 3B schematically shows the configuration of the spin valve read head 126 of the stacked ferry structure sandwiched between the shield layers 124 and 112. The pinned layer 3 of the ferromagnetic layer laminated on the antiferromagnetic layer 2 forms a fixed magnetization fixed in the height longitudinal direction. The reference layer 5 which is antiferromagnetically coupled to the fin layer 3 forms antiparallel pinned magnetization with the fin layer. The free layer 7 disposed above the reference layer 5 can freely rotate the magnetization direction in accordance with an external magnetic field. The front face shown is the air bearing surface ABS, the inner direction is the element height MRh direction perpendicular to the air bearing surface, and the lateral direction is the core width CW direction perpendicular to the element height direction. The length of the element height direction of the fin layer 3 and the antiferromagnetic layer 2 is set longer than the element height direction length of the free layer 7 and the reference layer 5. In other words, the reference layer 5 close to the free layer 7 is shorter than the fin layer 3 away from the free layer 7, thereby reducing the influence on the free layer 7. By appropriately selecting the amount of protrusion, as shown in Fig. 1C, the synthetic leakage magnetic field can be reduced. The magnetic domain control film 8 is arranged on the left and right sides of the free layer 7 to control the magnetization of the free layer 7 in the core width direction.

4A and 4B are cross-sectional views showing main steps of the manufacturing method of the laminated ferry structure. 4 (Ax) to 4 (Fx) attached with the subscript x show a cross-sectional view along the core width CW direction, and FIG. 4 (Ay) to FIG. 4 (Fy) with the subscript y attached The cross section along the element height MRh direction is shown.

As shown in FIGS. 4A and 4A, the shield layer 1 is formed on a nonmagnetic substrate with a soft magnetic material such as NiFe. The shield layer 1 can also serve as an electrode. A base layer 14 such as Ta is formed on the shield layer 1, and a laminated ferry spin valve element is formed thereon. For example, an antiferromagnetic film 2 having a thickness of about 7 nm, a fin layer 3 having a thickness of about 1.6 nm, an intermediate layer 4 having a thickness of about 0.9 nm, a reference layer 5 having a thickness of about 1.8 nm, and a thickness of about 1.0 nm. A nonmagnetic intermediate layer 6 of nm and a free layer 7 of about 4 nm in thickness are sequentially stacked. The intermediate layer 4 is a layer that generates antiferromagnetic coupling (antiparallel magnetization) between the fin layer 3 and the reference layer 5. The intermediate layer 6 is a layer that magnetically separates the free layer 7 and the reference layer 5. The intermediate layer 6 is formed of an insulating layer such as Al ₂ O ₃ or MgO to flow a tunnel current in the thickness direction, or a conductive layer such as Cu to flow a conductive current in the thickness direction. have. In the case of using an insulating film, the stacked ferry structure becomes a tunnel junction type GMR element, and in the case of using a conductive film, it becomes a CPP-GMR element. The antiferromagnetic film 2 is made of IrMn, PdPtMn, or the like. The fin layer 3, the reference layer 5, and the free layer 7 are formed of a single layer of NiFe, CoFeB, or a laminated ferromagnetic film.

As shown in FIGS. 4B and 4B, the photoresist pattern PR1 is formed on the free layer 7, and the ferromagnetic layer 2 is formed from the free layer 7 by ion milling or the like. The core width direction up to is etched. It does not matter even if it etches to the base layer 14. The antiferromagnetic layer 2 may remain partially. Next, a nonmagnetic insulating film 11 such as Al ₂ O ₃ is formed without removing the photoresist pattern PR1.

As shown in FIGS. 4C and 4C, the magnetic domain control film 8 and the nonmagnetic insulating film 12 are sequentially stacked without deleting the photoresist pattern PR1. As the magnetic domain control film 8, a lamination of antiferromagnetic films such as CoCrPt, antiferromagnetic films such as IrMn and PdPtMn, and soft magnetic (ferromagnetic) films such as NiFe and CoFeB is used. As the nonmagnetic insulating film 12, Al ₂ O ₃ or the like is used. Thereafter, photoresist pattern PR1 is removed.

As shown in FIG. 4 (Dx) and FIG. 4 (Dy), the photoresist pattern PR2 for etching in the element height direction is newly formed, and it is half from the free layer 7 by ion milling or the like. The ferromagnetic layer 2 is etched. The underlying layer 14 may be etched, or a part of the antiferromagnetic film 2 may be left. The fin layer 3 and the antiferromagnetic layer 2 are patterned in the element height direction. Thereafter, photoresist pattern PR2 is removed.

As shown in FIGS. 4 (Ex) and 4 (Ey), the photoresist pattern PR3 is formed to etch the free layer 7 and the reference layer 5 in the element height direction. By milling or the like, the free layer 7 to the reference layer 5 are etched. Even if it etches to the intermediate | middle layer 4, it does not matter. The nonmagnetic insulating layer 15 is formed without removing the photoresist pattern PR3. Thereafter, photoresist pattern PR3 is removed.

As shown in FIG. 4 (Fx) and FIG. 4 (Fy), the shield 9 is formed into a film. The shield 9 may also serve as an electrode. NiFe or the like is used as the shield 9.

In the manufacturing method described above, the shield layers 1 and 9 are formed by plating, vapor deposition, sputtering, or the like. Antiferromagnetic film 2, fin layer 3, intermediate layer 4 such as Ru, reference layer 5, intermediate layer 6, free layer 7, magnetic domain control film 8, insulating film 11, 12 The nonmagnetic insulating film 15 is formed by sputtering or the like.

In the first embodiment, the fin layer 3 protrudes in the element height direction from the free layer 7 and the reference layer 5. By controlling the amount of protrusion, the effect of reducing the synthetic leakage magnetic field shown in FIG. 1C is obtained. By setting the protrusion amount from 1 nm to 15 nm, an accurate leakage magnetic field reducing effect will be obtained.

The case where the reference layer 5 side of the fin layer 3 made the reference layer 5 the same height also protruded in the element height direction to the side separated from the reference layer 5.

Fig. 6A schematically shows this first modification. The pinned layer 3 having the fixed magnetization along the element height MRh direction, the reference layer 5 having the antiparallel magnetization direction with respect to the pinned layer 3, and the free layer 7 freely rotating the magnetization direction are provided. Lamination is arranged. With respect to the element height MRh direction, the reference layer 5 side of the fin layer 3 is patterned at the same height as the free layer 7 and the reference layer 5, but the reference layer 5 of the fin layer 3 is The side farther from the pattern is longer than the free layer 7 and the reference layer 5. The amount of protrusion on the side farther from the reference layer of the fin layer 3 is set to a (nm). The core width along the track width direction is patterned in common to the fin layer 3, the reference layer 5, and the free layer 7.

FIG. 6B is a cross-sectional view illustrating a laminated structure in which a shielded layer sandwiched between both sides of the laminated ferry structure is sandwiched. The difference from FIG. 1B is that the side of the reference layer 5 of the fin layer 3 is patterned at the same height as the reference layer 5. Others are the same as in FIG.

FIG. 6C is a graph showing the results of the calculator simulation as shown in FIG. 1C. As the protrusion amount a increases from 0, the synthetic magnetic field decreases from 500Oe, a shows a minimum of about 320Oe at about 3 to 4 nm, thereafter increases with an increase of a, and a is about 16 nm. At 17 nm is approximately 500Oe, as in the case of a = 0, and increasing a further increases the synthetic magnetic field. Since the reference layer side is reduced in the protrusions of the pinned layer so as to be separated from the free layer, the synthetic magnetic field reduction effect obtained at the same protrusion amount becomes small. When the protrusion amount a, as in the case of FIG. 1C, is made 1 nm to 15 nm, the effect of reducing the synthetic leakage magnetic field will surely be obtained.

FIG. 7 schematically shows the configuration of the read head 126 of the stacked ferry structure in which the shield layers 124 and 112 are accommodated, corresponding to FIG. 3B. What is different from FIG. 3B is that the side of the reference layer 5 of the fin layer 3 is patterned at the same height as the reference layer 5. The other thing is the same as that of FIG.

8A to 8B are cross-sectional views showing main steps of the manufacturing method of the laminated ferry structure shown in FIG. 7. 8 (Ax) and 8 (Ay) correspond to FIG. 4 (Ex) and 4 (Ey), and FIG. 8 (Bx) and FIG. 8 (By) correspond to FIG. 4 (Fx). ) Corresponds to FIG. 4 (Fy). In the etching of the free layer 7 and the reference layer 5, a part of the fin layer 3 is also etched. Others are the same. The control precision of an etching process may be relaxed.

In the embodiment, the magnetic domain control film was formed by laminating a high coercive force film or an antiferromagnetic film and a ferromagnetic film arranged on both sides of the free layer. It is also possible to configure the magnetic domain control film on the free film.

9 (A) and 9 (B) show a second modification example in which the magnetic domain control film is laminated on the free layer. FIG. 9A corresponds to FIG. 3B, and FIG. 9B is a cross-sectional view illustrating the laminated structure of FIG. 9A in more detail. 3B, the magnetic domain control film 8x is laminated | stacked on the free layer 7 instead of the magnetic domain control film 8 arrange | positioned at the both sides of the free film | membrane.

As shown in Fig. 9B, after forming a base layer 14 such as Ta, as shown in Figs. 4A and 4A, the antiferromagnetic film 2, the fin layer 3, The intermediate layer 4, the reference layer 5, the intermediate layer 6, and the free layer 7, such as Ru, are sequentially stacked, and the intermediate layer 16 such as Cu, the CoFeB, etc. are stacked on the free layer 7. The ferromagnetic film 17 and the antiferromagnetic film 18 such as IrMn are sequentially stacked. The lamination of the ferromagnetic film 17 and the antiferromagnetic film 18 constitutes the magnetic domain control film 8x. When the antiferromagnetic film is magnetized, the antiferromagnetic film 2 magnetizes in the element height direction and the antiferromagnetic film 18 in the core width direction. In order to magnetize the two antiferromagnetic layers in different directions, the antiferromagnetic films 2 and 18 preferably have different blocking temperatures.

As mentioned above, although this invention was demonstrated according to the Example and the modification, this invention is not limited to these, For example, the illustrated material, laminated structure, thickness of each layer, etc. can be variously changed. Other than the protrusion of the pinned layer with respect to the reference layer, various well-known configurations can be adopted. In addition, it will be apparent to those skilled in the art that various changes, improvements, substitutions, combinations, and the like are possible.

Claims (10)

A substrate having an air bearing surface, A free layer disposed above the substrate, perpendicular to the air bearing surface, defining the element height in the vertical direction thereof, formed in the ferromagnetic layer, and capable of rotating the magnetization direction in accordance with an external magnetic field; A reference layer disposed in parallel with the free layer and formed in the ferromagnetic layer, A first intermediate layer disposed between the free layer and the reference layer to magnetically separate both layers. A fin layer disposed parallel to the reference layer and opposite to the free layer, formed from a ferromagnetic layer, the length of the element height direction being longer than that of the reference layer, and having a fixed magnetization direction; And a magnetoresistive element disposed between the reference layer and the fin layer and having at least a second intermediate layer constituting a stacked ferry structure together with the reference layer and the fin layer. The method of claim 1, The magnetic head of which the length of the said element height direction of the said free layer is the same as the length of the element height direction of the said reference layer. The method according to claim 1 or 2, The pinned layer has a length in the same element height direction as that of the reference layer on the reference layer side and a length in the length element height direction than the reference layer on the side separated from the reference layer. The method according to any one of claims 1 to 3, And the fin layer is 1 nm to 15 nm longer than the reference layer. The method according to any one of claims 1 to 4, A magnetic head disposed on both sides of the spin valve magnetoresistive element with respect to a core width direction orthogonal to the element height direction, and having a magnetic control film composed of a high coercive force film or a stack of antiferromagnetic films and ferromagnetic films, respectively. The method according to any one of claims 1 to 4, A magnetic head laminated on the free layer and having a magnetic domain control film composed of a high coercive magnetic film or a stack of antiferromagnetic and ferromagnetic films. The method according to any one of claims 1 to 6, Has a pair of shields for fitting the spin valve magnetoresistive effect element, A magnetic head connected between the shields by a conductive member and capable of flowing a conductive current in the vertical direction between the pair of shields. The method according to any one of claims 1 to 6, Has a pair of shields for fitting the spin valve magnetoresistive effect element, And the first intermediate layer is an insulating layer, the magnetic head capable of flowing a tunnel current between the pair of shields. The method according to any one of claims 1 to 8, Magnetic head with inductive write head. 9. A magnetic recording apparatus having at least the magnetic head according to any one of claims 1 to 8, an inductive write head and a magnetic recording medium.

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