KR20090003608A - Thin film transistor substrate, its formation method and repair method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate, a method of forming the same, and a repair method thereof, and more particularly, to a thin film transistor substrate having a structure for pixel division driving.

A thin film transistor substrate according to an embodiment of the present invention includes a gate line formed on the base substrate; First and second pixel electrodes formed to be opposite to each other with gate lines interposed therebetween; First and second pixel electrodes formed on one side of the gate line and electrically connected to each other; A third pixel electrode formed to correspond to the second pixel electrode with a gate line interposed therebetween; First and second data lines intersecting the gate lines with the first to third pixel electrodes interposed therebetween; A first thin film transistor serving as a switch for applying a pixel voltage to the first and second pixel electrodes; A second thin film transistor serving as a switch for applying a pixel voltage to the third pixel electrode; A first floating metal pattern orthogonal to a gate line and partially overlapping the second and third pixel electrodes; A second floating metal pattern overlapping each of the first and second pixel electrodes may be provided.

Description

Thin Film Transistor Substrate And The Method For Fabricating And Repair Of The Same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate of a liquid crystal display device and a method for manufacturing the same, and more particularly, to a thin film transistor substrate and a method for manufacturing the same, which can improve yield.

A liquid crystal display (LCD) displays an image corresponding to a video signal on a liquid crystal panel in which liquid crystal cells are arranged in a matrix by adjusting the light transmittance of the liquid crystal cells according to the video signal. In this case, a thin film transistor (TFT) is usually used as an element for switching the liquid crystal cells.

To this end, the liquid crystal display device is bonded so that the thin film transistor array substrate and the color filter substrate face each other with a uniform gap, and a liquid crystal layer is formed between the thin film transistor array substrate and the color pillar substrate.

An alignment layer is formed on the opposite surface of the thin film transistor array substrate and the color filter substrate, and rubbing is performed to arrange the liquid crystal layers in a predetermined direction. In this case, the liquid crystal is rotated by dielectric anisotropy when an electric field is applied between the pixel electrode formed for each unit pixel of the thin film transistor array substrate and the common electrode formed on the front surface of the color filter substrate to transmit or block light by unit pixel. Display an image.

The liquid crystal display of the twist nematic mode has a disadvantage that the viewing angle is narrow. This is due to the refractive anisotropy of the liquid crystal molecules. In the TN mode, light transmittance is symmetrically distributed in the left and right viewing angles, but light transmittance is asymmetrically distributed in the up and down directions. This is because a range is generated and the viewing angle is narrowed.

As one of the methods for solving the viewing angle problem, a liquid crystal display device for dividing and driving one pixel cell into two or more has been proposed.

That is, as shown in FIG. 1, one pixel cell is divided into first and second pixel areas, and each pixel area receives a data voltage using two data lines 6a and 6b. Thin film transistors Tr1 and Tr2 are formed in each pixel area to switch data voltages.

The components formed on the thin film transistor substrate may exhibit defects due to various causes during the manufacturing process. Among the defects such as dot defects, line defects, or display stains, the bright spot defects in which pixels are expressed in full white is one of the main causes of yield degradation of the substrate due to fatal defects in display quality.

Such bright spot defects increase in frequency as the liquid crystal display device becomes larger. In particular, as shown in FIG. 1, the occurrence frequency of the bright spot defect is higher in a liquid crystal display device in which one pixel cell is divided into two subpixels.

Accordingly, countermeasures are needed to increase productivity through prevention of yield decline.

Accordingly, it is an object of the present invention to provide a thin film transistor substrate, a method of forming the same, and a repair method thereof, which can increase a yield through defect improvement of a liquid crystal display device.

In order to achieve the above object, the thin film transistor substrate according to the first embodiment of the present invention includes a gate line and a gate line formed on the base substrate, the first and second pixel electrodes being formed to be interposed therebetween, and Applying pixel voltage to the first thin film transistor and the second pixel electrode serving as a switch for applying the pixel voltage to the first and second data lines crossing the gate line with the two pixel electrodes interposed therebetween. A second thin film transistor, which serves as a switch, has a floating metal pattern that is orthogonal to the gate line and partially overlaps the first pixel electrode and the second pixel electrode.

A method of forming a thin film transistor substrate according to the first embodiment may include forming gate lines, first and second gate electrodes on a base substrate; Forming a gate insulating film covering a gate line and the first and second gate electrodes; Forming first and second semiconductor layers on the gate insulating layer on which the first and second gate electrodes are located; Forming a floating metal pattern in which portions of the first and second data lines, the first and second source / drain electrodes, and the gate line are respectively overlapped with the first and second pixel regions; Forming a protective layer to cover first and second data lines, first and second source / drain electrodes, and the floating metal pattern; Forming first and second pixel electrodes on the passivation layer, the first and second pixel electrodes respectively overlapping the floating metal pattern.

The method for repairing a defect in a second pixel region of a thin film transistor substrate according to the first embodiment may include: blocking the second thin film transistor; Electrically connecting a first pixel electrode to the floating metal pattern.

In addition, the thin film transistor substrate according to the second embodiment of the present invention includes a gate line formed on the base substrate; First and second pixel electrodes formed to be opposite to each other with the gate line interposed therebetween; First and second pixel electrodes formed on one side of the gate line and electrically connected to each other; A third pixel electrode formed to correspond to the second pixel electrode with a gate line interposed therebetween; First and second data lines intersecting the gate lines with the first to third pixel electrodes interposed therebetween; A first thin film transistor serving as a switch for applying a pixel voltage to the first and second pixel electrodes; A second thin film transistor serving as a switch for applying a pixel voltage to the third pixel electrode; A first floating metal pattern orthogonal to a gate line and partially overlapping the second and third pixel electrodes; A second floating metal pattern overlapping each of the first and second pixel electrodes may be provided.

The method of forming a thin film transistor substrate according to the second embodiment of the present invention includes forming a gate line, a first gate electrode positioned in a second pixel region, and a second gate electrode positioned in a third pixel region in a base substrate; Forming a gate insulating film to cover the gate line, the first and second gate electrodes; Forming first and second semiconductor layers on the gate insulating layer on which the first and second gate electrodes are located; A portion overlaps with the second and third pixel regions at positions where the first and second data lines, the first and second source / drain electrodes, and the gate lines are disposed with the first to third pixel regions interposed therebetween. Forming a first floating metal pattern to be formed; Forming a passivation layer to cover the first and second data lines, the first and second source / drain electrodes, and the first and second floating metal patterns; Forming second and third pixel electrodes partially overlapping with the first floating metal pattern, and first and second pixel electrodes partially overlapping with the second floating metal pattern, respectively, on the passivation layer.

According to a second embodiment of the present invention, a method of repairing a defect of a third pixel electrode of a thin film transistor substrate may include blocking the second thin film transistor; Electrically connecting the second pixel electrode and the first floating metal pattern.

The method for repairing a defect of the first or second pixel electrode of the thin film transistor substrate according to the second embodiment may include: blocking the first thin film transistor; Blocking electrical connection between the first pixel electrode and the second pixel electrode; Electrically connecting the first floating metal pattern to the second pixel electrode; Electrically connecting the first floating metal pattern and the third pixel electrode; Electrically connecting the second floating metal pattern to the second pixel region.

According to the thin film transistor substrate and the repairing method of the present invention, when a defect occurs in each pixel region in the pixel division driving structure, it can be effectively repaired.

In particular, since the thin film transistor substrate can be repaired while maintaining the function of viewing angle compensation, the yield of the substrate can be increased without causing deterioration of display quality.

An embodiment of the present invention will be described with reference to FIGS. 2 to 10.

FIG. 2 is a plan view illustrating one pixel cell of the thin film transistor substrate according to the first exemplary embodiment of the present invention, and FIG. 3 is a cross-sectional view illustrating a cutting plane taken along line II ′ of FIG. 2.

2 and 3, in the thin film transistor substrate of the liquid crystal display according to the present invention, one pixel cell includes first and second pixel regions.

The first and second pixel regions include first and second thin film transistors Tr1 and Tr2 as switches for applying pixel voltages. That is, one gate line 12 corresponds to one pixel cell, and the pixel voltage supplied through the first and second data lines 36a and 36b in response to a scan signal applied to the gate line 12 The pixel electrodes of the first and second pixel regions are charged.

If you look at this in more detail:

The first pixel region includes a gate line 12 and a first data line 36a formed to intersect on the base substrate 10 with the gate insulating layer 20 interposed therebetween, and a first thin film transistor Tr1 connected to the crossing portion. ) And a first pixel electrode 40a formed in the pixel region provided in the intersection structure.

The first thin film transistor Tr1 causes the pixel voltage supplied to the first data line 36a to be charged in the first pixel electrode 40a in response to the scan signal supplied to the gate line 12. To this end, the first thin film transistor Tr1 includes a first gate electrode 14a extending from the gate line 12, a first source electrode 32a connected to the first data line 36a, and a first source electrode ( 32a and the first drain electrode 34a connected to the first pixel electrode 40a and the gate insulating film 20 interposed with the first gate electrode 14a to overlap with the first source electrode 32a. A first semiconductor layer 24a including an active layer and an ohmic contact layer for forming a channel between the first drain electrodes 34a is provided.

The gate line 12 receives a scan signal from the gate driver through the gate pad.

The first data line 36a receives a pixel signal from a data driver through a data pad.

The first pixel electrode 40a charges the pixel voltage supplied from the thin film transistor to generate a potential difference with a common electrode formed on a color filter substrate (not shown). Due to this potential difference, the liquid crystal located on the thin film transistor substrate and the color filter substrate rotates by dielectric anisotropy.

The second pixel region is formed at a position corresponding to the first pixel region with the gate line 12 interposed therebetween. In addition, the second data line 36b for supplying the pixel voltage to the second pixel region is formed at a position corresponding to the first data line 36a with the first and second pixel regions interposed therebetween.

The second thin film transistor Tr2 having the same structure as that of the first thin film transistor Tr1 crosses the second data line 36b and the gate line 12 as a switch for applying a pixel voltage to the second pixel region. It is formed in the part.

The first and second pixel areas are formed in different sizes. For example, the ratio of the first pixel area to the second pixel area is 6: 4 or 7: 3. It sets one pixel area as the main pixel area and the other pixel area as the subpixel area, and compensates the viewing angle by applying a lower voltage level signal to the subpixel based on the data signal input to the main pixel area. It is for the function of the liquid crystal display device.

The floating metal pattern 38 is formed to partially overlap the first pixel electrode 40a and the second pixel electrode 40b on the interface between the first and second pixel regions.

The floating metal pattern 38 is for a repair process when a bright point defect occurs and is formed using the same metal layer as the source / drain electrodes 32a, 32b, 34a, and 34b.

4A to 4G illustrate a method of forming a thin film transistor substrate according to a first embodiment of the present invention. A method of forming the thin film transistor substrate according to the first embodiment will be described with reference to FIGS. 4A to 4G as follows.

First, the gate metal layer of the base substrate 10 is formed. The gate metal layer may be formed of chromium (Cr), molybdenum (Mo), an aluminum metal, or the like using a deposition method. The gate metal layer thus formed is selectively etched to form gate lines 12, first and second gate electrodes 14a and 14b as shown in FIG. 4A.

The gate insulating film 20 is formed as shown in FIG. 4B to cover the gate line 12 and the first and second gate electrodes 14a and 14b. The gate insulating layer 20 may be formed using an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or the like.

Subsequently, as shown in FIG. 4C, an active layer using amorphous silicon and an ohmic contact layer using amorphous silicon doped with impurities are formed on the gate insulating film 20 at the positions where the first and second gate electrodes 14a and 14b are formed. The first and second semiconductor layers 24a and 24b are formed, respectively.

After forming the first and second semiconductor layers 24a and 24b, a data metal layer is formed to cover the first and second semiconductor layers 24a and 24b and the gate insulating layer 20, and selectively etch the data metal layer. 4D, the first and second data lines 36a and 36b, the first and second source / drain electrodes 32a, 34a, 32b, and 34b and the floating metal pattern 38 are formed. At this time, the data metal layer is formed using a single metal such as copper (Cu), chromium (Cr), molybdenum (Mo), titanium (Ti), tantalum (Ta), molybdenum alloy (Mo alloy), or two or more of these alloys It can be formed using.

In addition, as shown in FIG. 4E, the passivation layer may cover the first and second data lines 36a and 36b, the first and second source / drain electrodes 32a, 34a, 32b, and 34b, and the floating metal pattern 38. 50).

Next, as illustrated in FIG. 4F, a transparent conductive film layer 40 for forming a pixel electrode is formed on the protective layer 50. The transparent conductive film layer 40 can be formed by deposition using ITO, TO, IZO, ITZO, or the like.

The transparent conductive film layer 40 is selectively etched to form first and second pixel electrodes 40a and 40b as shown in FIG. 4G.

5 is a flowchart illustrating a repairing method of the thin film transistor substrate according to the first embodiment of the present invention.

Referring to FIGS. 2 to 5, the repairing method of the thin film transistor substrate according to the first embodiment is as follows.

As illustrated in FIG. 5, when a bright point defect occurs in the first pixel region, first source / drain electrodes 32a of the first thin film transistor Tr1, which is a switch element for applying the pixel voltage of the first pixel region, are first used. 34a) is cut (S1). As such, the laser may be used to cut the first source / drain electrodes 32a and 34a.

Next, the second bonding portion 60b of the floating metal pattern 38 is bonded (S2). The second bonding part 60b is a portion of the region where the floating metal pattern 38 and the second pixel electrode 40b overlap, and the process of bonding the second bonding part 60b with a laser is performed by the floating metal pattern 38 and the second bonding part 60b. This means that the pixel electrode 40b is electrically connected.

Through such a repair process, the pixel voltage of the second pixel region may be applied to the first pixel region in the form of a floating voltage using the floating metal pattern 38.

When bright point defects occur in the second pixel region, the second source / drain electrodes 32b and 34b are similarly cut and the first junction 60a is bonded to repair the same.

As described above, according to the repair method according to the first exemplary embodiment of the present invention, when a defect occurs in the first and second pixel areas, the pixel voltages of the other pixel areas are applied as a floating voltage to drive the first pixel areas.

As described above, repair methods for the first and second pixel areas are possible, but repairing defects occurring in the first pixel area may cause some problems in display quality.

This is because the areas of the first and second pixel regions are different as described above. That is, in the normal case, the first pixel region is the main pixel region, and the pixel voltage of the corresponding data value is applied to the first pixel region. However, when a defect occurs in the first pixel region and the repair is performed in the above-described manner, a lower voltage value than the second pixel region is applied because the pixel voltage value applied to the second pixel region, which is a subpixel region, is applied as a floating voltage value. Licensed.

Although one pixel cell may be considered to have a small specific gravity in the entire panel, the display quality may not be significantly affected by the difference of small pixel voltage values, but the following embodiments are proposed for better display quality. .

6 is a plan view illustrating one pixel cell in a thin film transistor substrate according to a second exemplary embodiment of the present invention. 7 and 8 are sectional views showing a cut plane of I-I 'and a cut plane of II-II', respectively.

6 to 8, one pixel cell in the thin film transistor substrate according to the second embodiment of the present invention includes first to third pixel regions.

The first and second pixel regions include first and second pixel electrodes 140a and 140b, respectively, and are connected to each other by the fourth pixel electrode 140d in a normal state. Accordingly, in the normal state, the first and second pixel areas form one main pixel area driven by the same pixel voltage.

The third pixel region is formed at a position corresponding to the second pixel region with the gate line 112 interposed therebetween, and becomes a subpixel region in a normal state.

The second and third pixel regions include first and second thin film transistors Tr1 and Tr2 as switches for applying pixel voltages.

If you look at this in more detail:

The second and third pixel regions may include a gate line 112 and a first data line 136a formed on the base substrate 110 so as to intersect with the gate insulating layer 120 therebetween, and the first thin film connected to the crossing portion. The transistor Tr1 and the first to third pixel electrodes 140a to 140c formed in the pixel region having the cross structure are provided. The first and second pixel electrodes 140a and 140b are connected by the fourth pixel electrode 140d so that the first and second pixel areas form one main pixel area in the normal state.

The first thin film transistor Tr1 has a pixel voltage supplied to the first data line 136a in response to a scan signal supplied to the gate line 112 at the first pixel electrode 140a and the second pixel electrode 140b. The first pixel electrode 140a is charged through the fourth pixel electrode 140d. To this end, the thin film transistor includes first and second gate electrodes 114a and 114b extending from the gate line 112, a first source electrode 132a and a first source electrode connected to the first data line 136a. A first drain electrode 134a facing the 132a and connected to the first pixel electrode 140a and the first insulating layer 120 interposed with the first gate electrode 114a with the gate insulating layer 120 interposed therebetween. And a first semiconductor layer 124a including an active layer and an ohmic contact layer forming a channel between the first drain electrode 134a and the first drain electrode 134a.

The gate line 112 supplies a scan signal from the gate driver through the gate pad, and the first data line 136a receives a pixel signal from the data driver through the data pad.

The third pixel region is formed at a position corresponding to the second pixel region with the gate line 112 interposed therebetween. In addition, the second data line 136b for supplying the pixel voltage to the third pixel region is formed at a position corresponding to the first data line 136a with the first and second pixel regions interposed therebetween.

As a switch for applying a pixel voltage to the third pixel region, a second thin film transistor having the same structure as that of the first thin film transistor Tr1 is formed at an intersection of the second data line 136b and the gate line 112. do.

The process of charging the pixel voltage in the third pixel region is the same as the process of charging the pixel voltage in the first and second pixel regions.

As described above, the first to third pixel areas are set such that the first and second pixel areas form a main pixel area, and the third pixel area constitutes a subpixel area. For example, the first to third pixel areas are each set at a ratio of 3: 4: 3.

The first floating metal pattern 138a is formed to partially overlap the second pixel electrode 140b and the third pixel electrode 140c on the interface between the second and third pixel regions.

The first floating metal pattern 138a is for a repair process when a bright point defect occurs and is formed using the same metal layer as the source / drain electrodes 132 and 134. That is, the base layer 110 on which the semiconductor layer 120 is formed is formed using a metal material such as Mo, Ti, Cu, AlNd, Al, Cr, Mo alloy, Cu alloy, Al alloy, or the like. Alternatively, the source / drain electrode layer including the second floating metal pattern 138b may be Al / Cr, Al / Mo, Al (Nd) / Al, Al (Nd) / Cr, Mo / Al (Nd) / Mo, Cu / Mo, Ti / Al (Nd) / Ti, Mo / Al, Mo / Ti / Al (Nd), Cu Alloy / Mo, Cu Alloy / Al, Cu Alloy / Mo Alloy, Cu Alloy / Al Alloy, Al / Mo The alloy, Mo alloy / Al, Al alloy / Mo alloy, Mo alloy / Al alloy, Mo / Al alloy, Cu / Mo alloy, Cu / Mo (Ti) and the like can also be formed in a structure in which two or more layers are laminated.

The second floating metal pattern 138b is formed to partially overlap the first and second pixel electrodes 140a and 140b on the interface between the first and second pixel regions, respectively. The second floating metal pattern 138b may be formed using the same metal layer as the first floating metal pattern 138a.

Since the method of forming the thin film transistor substrate according to the second embodiment of the present invention can be easily formed based on the method of forming the thin film transistor according to the first embodiment and FIGS. 6 to 8, detailed description thereof will be omitted. .

Looking at the bright point repair method of the thin film transistor substrate according to the second embodiment of the present invention as follows. FIG. 9 is a flowchart illustrating a method of repairing defects of the first and second pixel regions of the main pixel region, and FIG. 10 is a flowchart of a method of repairing defects of the third pixel region of the subpixel region.

6 to 9, when a defect occurs in the main pixel area, the repair method of the thin film transistor substrate first cuts the first source / drain electrodes 132a and 134b of the first thin film transistor (S1). . That is, the first source / drain electrodes 132a and 132b are cut using a laser.

Subsequently, the first and second bonding portions 160a and 160b of the first floating metal pattern 138a are bonded (S2). That is, by bonding the first and second junctions 160a and 160b using a laser, the pixel voltage applied to the third pixel electrode 140c is transferred to the second pixel electrode (via the first floating metal pattern 138a). 140b).

The fourth pixel electrode 140d is cut (S3). That is, by cutting the fourth pixel electrode 140d using a laser, the pixel voltage applied to the second pixel electrode 140b is prevented from being applied directly to the first pixel electrode 140a.

Then, the third bonding portion 160c of the second floating metal pattern 138b is bonded (S4). As such, the third junction 160c is electrically connected to the second floating metal pattern 138b and the second pixel electrode 140b using a laser, so that the voltage applied to the second pixel electrode 140b is in the form of a floating voltage. To be applied to the first pixel electrode 140a.

Through this repair process, the second and third pixel electrodes 140b and 140c become the main pixel area while receiving the pixel voltage through the second thin film transistor Tr2.

The first pixel electrode 140a receives a coupling voltage from the second pixel electrode 140b and receives a pixel voltage having a voltage lower than that applied to the main pixel area to become a subpixel area.

As described above, since the first to third pixel areas are each set to a size having a ratio of 3: 4: 3, the main pixel area of the second and third pixel areas and the subpixel area of the first pixel area are 7: It is set to the size of three. Since the sub-pixel region receives the coupling voltage value of the pixel voltage value of the main pixel region, the sub-pixel region receives a pixel voltage value different from that of the main pixel region.

That is, even after the repair process, the function of the liquid crystal display for compensating the viewing angle may be maintained by varying the size of the divided pixel region and the pixel voltage value applied to each pixel region.

In contrast, a repair method of the thin film transistor substrate when the third pixel region, which is a subpixel region, occurs, will be described with reference to FIGS. 6 to 8 and FIG. 10.

When the third pixel region is defective, first, the second source / drain electrodes 132b and 134b are cut (S1). That is, the second source / drain electrodes 132b and 134b are cut by using a laser to prevent the pixel voltage applied through the second data line 136b from being charged in the third pixel electrode 140c.

Then, the first bonding portion 160a of the first floating metal pattern 138a is bonded (S2).

Through this repair process, the first and second pixel electrodes 140a and 140b receive the pixel voltage from the first data line 136a through the first thin film transistor Tr1 as in the normal state. The third pixel electrode 140c receives a coupling voltage from the second pixel electrode 140b.

As described above, in the repair process for the failure of the sub-pixel region, the function of the liquid crystal display for compensating the viewing angle is maintained by varying the size of the divided pixel region and the pixel voltage value applied to each pixel region as in the normal state.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

1 is a plan view schematically illustrating a thin film transistor substrate having a conventional pixel division structure.

2 is a plan view showing a thin film transistor substrate according to a first embodiment of the present invention.

3 is a cross-sectional view illustrating a cut plane of the line II ′ shown in FIG. 2.

4A to 4G illustrate a method of forming a thin film transistor substrate according to a first embodiment of the present invention.

FIG. 5 is a flowchart illustrating a repairing method of the thin film transistor substrate shown in FIGS. 2 and 3.

6 is a plan view showing a thin film transistor substrate according to a second embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a cutting plane taken along line II ′ of FIG. 6.

FIG. 8 is a cross-sectional view illustrating a cut plane of II-II ′ shown in FIG. 6. FIG.

9 and 10 are flowcharts illustrating a repairing method of the thin film transistor substrate illustrated in FIGS. 6 to 8.

<Description of Symbols for Main Parts of Drawings>

12,112: gate lines 14a, 14b, 114a, 114b: gate electrodes

32a, 32b, 132a, 132b: source electrode 34a, 34b, 134a, 134b: drain electrode

36a, 36b, 136a, 136b: data lines 40a, 40b, 140a, 140b: pixel electrodes

38,138a, 138b: Floating Metal Pattern

Claims (19)

A gate line formed on the base substrate; First and second pixel electrodes opposed to each other with the gate line interposed therebetween; First and second data lines intersecting the gate line with first and second pixel electrodes interposed therebetween; A first thin film transistor serving as a switch for applying a pixel voltage to the first pixel electrode; A second thin film transistor serving as a switch for applying a pixel voltage to the second pixel electrode; And And a floating metal pattern perpendicular to the gate line and partially overlapping the first pixel electrode and the second pixel electrode. The method of claim 1, The floating metal pattern may be formed using the same metal layer as the first and second data lines. As a method of forming a thin film transistor substrate divided into first and second pixel regions in which one pixel cell is disposed with a gate line interposed therebetween, Forming the gate lines, the first and second gate electrodes on a base substrate; Forming a gate insulating film to cover the gate line and the first and second gate electrodes; Forming first and second semiconductor layers on a gate insulating layer on which the first and second gate electrodes are located; Forming a floating metal pattern in which portions of the first and second data lines, the first and second source / drain electrodes, and the gate line are respectively overlapped with the first and second pixel regions; Forming a passivation layer to cover the first and second data lines, the first and second source / drain electrodes, and the floating metal pattern; And forming first and second pixel electrodes on the passivation layer, the first and second pixel electrodes each of which overlaps the floating metal pattern. One pixel cell is divided into first and second pixel regions arranged with a gate line interposed therebetween, and each pixel region receives a pixel voltage through the first and second thin film transistors. A repair method of a thin film transistor substrate further comprising a floating metal pattern in which a portion of each of the two pixel electrodes overlaps with each other. When a failure of the second pixel region occurs, Blocking the second thin film transistor; And electrically connecting the first pixel electrode and the floating metal pattern to the first pixel electrode. The method of claim 4, wherein The blocking of the second thin film transistor may include cutting a source / drain electrode of the second thin film transistor using a laser. The method of claim 4, wherein And electrically connecting the first pixel electrode and the floating metal pattern to each other using laser bonding. A gate line formed on the base substrate; First and second pixel electrodes opposed to each other with the gate line interposed therebetween; A third pixel electrode adjacent to the second pixel electrode; A fourth pixel electrode electrically connecting the second and third pixel electrodes; First and second data lines intersecting the gate line with the first to third pixel electrodes interposed therebetween; A first thin film transistor serving as a switch for applying a pixel voltage to the first pixel electrode; A second thin film transistor serving as a switch for applying a pixel voltage to the second pixel electrode; A first floating metal pattern partially overlapping the first and second pixel electrodes; And And a second floating metal pattern in which portions of the second and third pixel electrodes overlap each other. The method of claim 7, wherein And the first floating metal pattern is formed using the same metal layer as the first and second data lines. The method of claim 7, wherein And the second floating metal pattern is formed using the same metal layer as the first and second data lines. The method of claim 7, wherein The area ratio of the first to third pixel electrodes is 3: 4: 3. A method of forming a thin film transistor substrate, which is divided into first and second pixel regions in which one pixel cell is electrically connected, and a third pixel region corresponding to the second pixel region with a gate line interposed therebetween. Forming a gate line, a first gate electrode positioned in the second pixel region, and a second gate electrode positioned in the third pixel region in a base substrate; Forming a gate insulating film to cover the gate line and the first and second gate electrodes; Forming first and second semiconductor layers on a gate insulating layer on which the first and second gate electrodes are located; A portion of the first and second data lines, the first and second source / drain electrodes, and the gate line disposed between the first and third pixel areas, respectively; Forming the overlapping first floating metal pattern; Forming a second floating metal pattern between the first and second pixel regions so that portions of the first and second pixel regions overlap each other; Forming a passivation layer to cover the first and second data lines, the first and second source / drain electrodes, and the first and second floating metal patterns; Forming second and third pixel electrodes partially overlapping with the first floating metal pattern, and first and second pixel electrodes partially overlapping with the second floating metal pattern, respectively, on the passivation layer; Forming a thin film transistor substrate, characterized in that. First to second pixel electrodes electrically connected to one pixel cell, and first to third pixel regions each including a third pixel electrode corresponding to the second pixel electrode with a gate line interposed therebetween; A first thin film transistor as a switch element for applying a pixel voltage to the first and second pixel electrodes, a second thin film transistor as a switch element for applying a pixel voltage to the third pixel electrode, and the gate line. And the third floating metal pattern having a first floating metal pattern partially overlapping the second and third pixel electrodes, and the second floating metal pattern partially overlapping the first and second pixel electrodes, respectively. As a method for repairing a defective pixel electrode, Blocking the second thin film transistor; And electrically connecting the second pixel electrode and the first floating metal pattern to each other. The method of claim 12, The blocking of the second thin film transistor may include cutting the source / drain electrodes using a laser. The method of claim 12, And electrically connecting the second pixel electrode and the first floating metal pattern to each other using laser bonding. First to second pixel electrodes electrically connected to one pixel cell, and first to third pixel regions each including a third pixel electrode corresponding to the second pixel electrode with a gate line interposed therebetween; A first thin film transistor as a switch element for applying a pixel voltage to the first and second pixel electrodes, a second thin film transistor as a switch element for applying a pixel voltage to the third pixel electrode, and the gate line. And the first floating metal pattern partially overlapping the second and third pixel electrodes, and the second floating metal pattern partially overlapping the first and second pixel electrodes, respectively. And a method for repairing a failure of the second pixel electrode, Blocking the first thin film transistor; Interrupting electrical connection between the first pixel electrode and the second pixel electrode; Electrically connecting the first floating metal pattern and the second pixel electrode; Electrically connecting the first floating metal pattern and the third pixel electrode; And electrically connecting the second floating metal pattern to the second pixel region. The method of claim 15, The blocking of the first thin film transistor may include cutting a source / drain electrode using a laser. The method of claim 15, The cutting of the electrical connection between the first pixel electrode and the second pixel electrode is a thin film transistor substrate repair method, characterized in that the cutting using a laser. The method of claim 15, And electrically connecting the first floating metal pattern to the second and third pixel electrodes, respectively, by using laser bonding. The method of claim 15, And electrically connecting the second floating metal pattern and the second pixel region to each other using laser bonding.

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