KR20080093689A - Vacuum channel transistor - Google Patents

Abstract

A vacuum channel transistor is provided to reduce influence of electron emission from a source and to emit electrons from the source with a gate voltage lower than that of a conventional vacuum channel transistor. A vacuum channel transistor includes a semiconductor substrate(100), a cathode layer(230), an anode layer(930), and a gate layer(530). The cathode layer is provided on the semiconductor substrate. The anode layer is spaced apart from an upper portion of the cathode layer. The gate layer is provided between the cathode layer and the anode layer to be spaced apart from the cathode layer and the anode layer. The cathode layer has a heating resistor(233). The gate layer includes an electron passing region so that electrons emitted from the cathode layer reaches the anode layer. The cathode layer is spaced apart from the semiconductor substrate. An upper portion of the cathode layer is coated with a low work function material.

Description

Vacuum channel transistors {VACUUM CHANNEL TRANSISTOR}

1 illustrates a vacuum channel transistor according to an embodiment of the present invention.

FIG. 2 illustrates a vacuum channel transistor coated with a low work function material according to another exemplary embodiment of the present invention.

3 is a view showing a vacuum channel transistor further including a control gate according to another embodiment of the present invention.

4 illustrates a vacuum channel transistor including a gate in a grid form according to another embodiment of the present invention.

FIG. 5 is a view illustrating a vacuum channel transistor including a gate electrode and a control gate in a lattice form according to another embodiment of the present invention.

6 is a view showing a heat-dissipating vacuum channel transistor according to another embodiment of the present invention.

7 illustrates a vacuum channel transistor coated with a low work function material according to another exemplary embodiment of the present invention.

8 and 9 illustrate planar vacuum channel transistors according to still another exemplary embodiment of the present invention.

FIG. 10 illustrates a planar vacuum channel transistor further including a control gate according to another exemplary embodiment of the present invention.

11 and 12 illustrate a vertical vacuum channel transistor according to another embodiment of the present invention.

FIG. 13 illustrates a vertical vacuum channel transistor further including a control gate according to another embodiment of the present invention.

***** Explanation of symbols for main parts of drawing *****

100: semiconductor substrate

110: insulator layer

120: channel insulator layer

220: heating electrode

230, 320: cathode layer (source)

223, 233, 253, 263: heating resistor

324, 234, 354, 364: low work function materials

350, 360: source

520, 530, 550, 560: gate

630, 640, 650, 660, 740, 760: control gate

900, 920, 930: anode

950, 960: drain

The present invention relates to transistors, and more particularly to vacuum channel transistors.

Conventional micro-tip vacuum transistors have a sharp cathode tip, and electrons protruding quantum mechanically from the cathode tip metal surface to the anode electrode by applying a strong voltage between the cathode electrode and the gate electrode. It uses the principle of flowing a current by accelerating a high voltage and transferring it to the anode electrode.

In order to achieve a suitable free electron emission on the metal surface in the vacuum, a voltage of 0.5 V / Å or more must be applied. For this purpose, the gate electrode radius of the electron emission portion around the metal cathode tip must be much smaller than 1 μm. In order to manufacture the micro tip of the vacuum transistor that satisfies these conditions, a very large area of less than 1㎛ semiconductor photolithography process must be supported and must be able to maintain a high resolution of less than 1㎛. At present, semiconductor processing technology has made significant progress, and it is possible to use such semiconductor processing technology on a small scale, but there is still a problem in that it takes much time to have a completed process on a large scale.

In addition to the spacing between the electrodes and the formation of sharp electron emitters, successful construction of the vacuum transistor requires an electron emitting material with a stable and low work function for driving at low voltages.

At present, a number of studies on micro tips using metals such as molybdenum (M0) and tungsten (W) have been published. Molybdenum or tungsten micro tips have a strong mechanical advantage, but the work function is large and there is a limit to reduce the radius of curvature of the tip, so the driving voltage required for sufficient electron emission is high.

Recently, research on the method of lowering the work function by surface-treating the micro tip or research on materials having a low work function, such as diamond-based thin films, has been underway to develop the micro tip cathode from various angles.

However, a conventional vacuum transistor using a micro tip has various problems. First, the tip is damaged by ion stuffing during operation. Second is the difficulty in forming the tip. Third, it is difficult to realize spatial uniformity. This affects the uniformity of an image in an image display device using a vacuum transistor as a pixel. Fourth, flicker occurs. Fifth, an arc discharge occurs due to a high electric field between the gate electrode and the cathode tip, causing the gate or the cathode tip to be destroyed. Since the degree of vacuum may drop during the actual process or during operation, and the spacing between the electrodes is very small, an arc discharge may easily occur if impurities such as a small amount of metal atoms are deposited between the electrodes. Sixth is the arc discharge problem that occurs between the gate and the anode. In order to accelerate the electrons, a high voltage is applied to the anode, and a discharge may occur between the wide gate electrode and the anode electrode.

The above technical problem has been made a lot of improvements at present, but since the provision of a fundamental problem appears from the formation of a micro tip in which electrons are emitted, the present invention seeks to solve them by providing a new planar vacuum transistor.

An object of the present invention to solve this problem is to provide a vacuum transistor which is manufactured at a small size by using a micromachine and a semiconductor process technology to operate at a low voltage and advantageous for mass production.

A vacuum channel transistor according to an embodiment of the present invention, a semiconductor substrate; A cathode layer disposed on the semiconductor substrate; An anode layer spaced apart from the cathode layer; And a gate layer spaced apart from the cathode layer and the anode layer between the cathode layer and the anode layer, wherein the cathode layer includes a heating resistor, and the gate layer has electrons emitted from the cathode layer. It includes an electron passing region to reach the anode layer.

Here, preferably, the cathode layer and the semiconductor substrate are spaced apart from each other.

Here, a low work funtion material is preferably applied on the cathode layer.

Here, preferably, the above-described vacuum channel transistor further includes at least one control gate layer spaced apart from the anode layer and the gate layer between the anode layer and the gate layer, wherein the control gate layer is It includes the same electron passing region as the gate layer.

Here, preferably, the electron passing region includes a plurality of holes drilled in the form of a lattice.

A vacuum channel transistor according to another embodiment of the present invention, a semiconductor substrate; A heating electrode including a heating resistor and spaced apart from the upper portion of the semiconductor substrate; A cathode layer disposed spaced apart from the heating electrode; An anode layer spaced apart from the cathode layer; And a gate layer spaced apart from the cathode layer and the anode layer between the cathode layer and the anode layer, wherein the gate layer passes electrons to allow electrons emitted from the cathode layer to reach the anode layer. It includes an area.

Here, a low work function material is preferably applied on the cathode layer.

Vacuum channel transistor according to another embodiment of the present invention, a semiconductor substrate; A channel insulator layer disposed on the semiconductor substrate; A source and a drain disposed on the channel insulator layer and spaced apart from each other; A gate disposed under the channel insulator layer; And a heat generating resistor layer disposed under the semiconductor substrate, wherein a low work function material is applied to an electron emission region of the source, and the gate is disposed on the source side under the region between the source and the drain, The semiconductor substrate and the heat generating resistor layer are electrically insulated.

Vacuum channel transistor according to another embodiment of the present invention, a semiconductor substrate; A heat generating resistor layer disposed on the semiconductor substrate; An insulator layer disposed on the heat generating resistor layer; A channel insulator layer disposed on the insulator layer; A source and a drain disposed on the channel insulator layer and spaced apart from each other; And a gate disposed under the channel insulator layer, wherein a low work function material is applied to an electron emission region of the source, and the gate is disposed on the source side under the region between the source and the drain.

Here, preferably, the above-described vacuum channel transistor further includes a control gate disposed under the channel insulator layer, and the control gate is spaced apart from the gate under the region between the source and the drain.

Vacuum channel transistor according to another embodiment of the present invention, a semiconductor substrate; A channel insulator layer disposed on the semiconductor substrate; A source disposed on the channel insulator layer; A drain layer spaced apart from the source; A gate disposed under the channel insulator layer; And a heat generating resistor layer disposed under the semiconductor substrate, wherein a low work function material is applied to an electron emission region of the source, and the gate is disposed on the source side outside the source lower region, The heat generating resistor layer is electrically insulated.

Here, preferably, the above-described vacuum channel transistor further includes one or more control gates spaced apart from the source and the drain layer between the source and the drain layer.

Vacuum channel transistor according to another embodiment of the present invention, a semiconductor substrate; A heat generating resistor layer disposed on the semiconductor substrate; An insulator layer disposed on the heat generating resistor layer; A channel insulator layer disposed on the insulator layer; A source disposed on the channel insulator layer; A drain layer spaced apart from the source; And a gate disposed under the channel insulator layer, wherein a low work function material is applied to an electron emission region of the source, and the gate is disposed on the source side outside the source lower region.

Here, preferably, at least one control gate disposed between the source and the drain layer and spaced apart from the source and the drain layer.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

First, the electron emission phenomenon from the cathode electrode in vacuum will be described theoretically.

The release of electrons from the metal into the vacuum is caused by the movement of the electrons due to the tunneling effect as the height and width of the potential barrier on the metal surface are reduced by a very large electric field. In general, the electric field strength required to discharge electrons in a metal into a vacuum is 10 ⁹ [V / m] or more. These metals are generally pure metals and have a work function of about 3 to 5 eV. However, as a specific metal compound or nonmetal, diamond or diamond like carbon (DLC) has a low work function and obtains a discharge current similar to that of a general metal even in an electric field of about 10 ⁷ to 10 ⁸ [V / m]. The use of these low-function metals as cathode materials makes electron-emitting transistors capable of driving at low voltages.

The current density of electrons released into the vacuum in the metal can be obtained according to the Fowler-Nordheim equation shown in Equation 1.

Where Φ is the potential difference corresponding to the work function of the metal, t (y) is an elliptic function that takes into account the image force of the emitted electrons, ν (y) is an elliptic function with almost 1, E is Displays the strength of the electric field applied to the metal surface. In addition, there may be microscopic protrusions on the surface of such metals, and the increase in current due to such protrusions is generally known to be hundreds to thousands of times.

The magnitude of the current is determined by the electrons emitted from the cathode, which depends on the strength of the electric field at the edge of the cathode electrode adjacent to the gate electrode and the magnitude of the work function of the metal constituting the cathode. The field strength at the edge of the cathode electrode is a function of the magnitude of the voltage (gate voltage) applied between the cathode and the gate, the thickness of the channel insulation layer between them, and the dielectric constant of the channel insulation layer.

Therefore, given the work function qΦ of the cathode metal and the strength of the electric field, Equation 1 shows the current density J. In order to increase the current density, a material having a small work function should be used, and the edge curvature radius of the cathode electrode should be reduced and the voltage between the cathode and the gate should be increased to increase the electric field strength.

In the conventional vacuum transistor, when the gap between the cathode tip and the gate electrode is to be made smaller than 1 μm, electrode breakage may occur due to arc discharge between the cathode tip and the gate electrode, thereby limiting the distance between the two electrodes. . Therefore, the method of increasing the electric field strength by reducing the radius of curvature of the tip of the cathode tip to increase the emission current, but there is a structural disadvantage to increase the gate voltage to obtain a sufficient emission current. If the gate driving voltage is large, a high voltage driving IC must be used, which increases the product price and power consumption.

However, in the structure of the present invention, since the channel insulation layer exists between the gate and the cathode to prevent arc discharge, the gate breakdown caused by the arc discharge in the conventional structure can be prevented. It is possible to cause electron emission at a sufficiently low gate voltage. Therefore, it can be driven by using low-power low-voltage driver IC manufactured by the MOS process, thereby producing a competitive price. Also, when the relative dielectric constant of the channel insulating layer is εX, the intensity E of the electric field in the vacuum channel adjacent to the channel insulating layer and the cathode electrode increases by εX times, and the electric field is caused by the small radius of curvature present at the edge of the cathode. Since there is an effect of increasing the intensity of the current density (J) can be greatly increased.

If the cathode is formed of tungsten (W) or molybdenum (Mo), the work function is about 4.5 eV, which is too large. Diamond or DLC, on the other hand, has a very low work function and can form the cathode with these materials to achieve the desired current density even at low field strengths. It is also possible to form a cathode with a good conductor and to apply a low work function material thereon. An example of improving the stability and emission characteristics of electron emission has been reported by coating a material such as diamond or DLC having a low work function, which is chemically stable, has excellent thermal and electrical conductivity, and has excellent stability at high temperatures. Low work function materials that can be used in the present invention include all materials having the above characteristics, including, for example, diamond-like carbon (DLC) and barium oxide.

In addition, the cathode can be heated directly or indirectly to increase the current density emitted from the cathode. As the temperature of the cathode increases, the covalently bonded electrons tend to be energized and become free electrons, and thus can emit more electrons with a smaller gate voltage.

In addition, when the electrons having escaped from the cathode surface are attracted to the electric field caused by the anode voltage and the anode current starts to flow, it should be considered whether the magnitude of the current can be easily adjusted by the gate. In the case of using a vacuum transistor in an image display device, the higher the voltage applied to the anode, the higher the energy of the accelerated electrons is, and the use of a high voltage phosphor can increase the luminous efficiency. Symptoms may occur. The flashover phenomenon is a phenomenon in which the cathode current in the conductive state cannot be controlled by the gate voltage.

In the present invention, the control gate is formed to prevent the flashover phenomenon. The conductor constituting the control gate must select a metal with a high work function to prevent direct electron emission from the protective gate metal due to the high pressure of the anode. A detailed configuration of the control gate according to various embodiments of the present invention will be described later.

Throughout this specification, terms such as gate, anode, cathode, source, and drain are used in the same meaning as used in general transistors, and thus detailed roles thereof will be omitted.

Hereinafter, embodiments of a vacuum channel transistor according to the present invention will be described in detail with reference to the drawings.

1 illustrates a vacuum channel transistor according to an embodiment of the present invention. Referring to FIG. 1, a vacuum channel transistor according to an exemplary embodiment of the present invention may be spaced apart from a semiconductor substrate 100, a cathode layer 230 disposed on the semiconductor substrate 100, and an upper portion of the cathode layer 230. An anode layer 930; And a gate layer 530 spaced apart from the cathode layer 230 and the anode layer 930 between the cathode layer 230 and the anode layer 930.

The cathode layer 230 includes a heat generating resistor 233. At this time, the temperature of the heat generating resistor 233 increases when a current flows therein, which increases the temperature of the entire cathode layer 230 to facilitate the emission of electrons from the cathode layer 230. Here, the cathode layer 230 and the semiconductor substrate 100 is preferably spaced apart from each other. By doing so, the heat generating resistor 233 does not directly conduct heat to the portions other than the cathode layer 230, and thus does not significantly affect the temperature of the other portions of the device.

When a voltage is applied between the gate layer 530 and the cathode layer 230, electrons are emitted from the cathode layer, and the emitted electrons are formed by the electric field formed between the anode layer 930 and the cathode layer 230. It is delivered to (930). In this case, the gate layer 530 includes an electron passing region so that electrons emitted from the cathode layer 230 can reach the anode layer 930. The electron passing region refers to a form of the gate layer 530 which does not prevent electrons from being transferred between the cathode layer 230 and the anode layer 930. In order not to interfere with electron transfer, the gate layer 530 may be, for example, in the form of a hole including a portion thereof. In this case, electrons may be transferred from the cathode layer 230 to the anode layer 930 through the orthogonality. Alternatively, the gate layer 530 may be, for example, one or more individual gates are disposed. In this case, electrons may be transferred from the cathode layer 230 to the anode layer 930 without being interrupted by the gate layer 530. In this case, the region through which electrons can pass in the cross section where the gate layer 530 exists is called an electron passing region.

The above-described vacuum channel transistor shown in FIG. 1 is a vacuum transistor in which a series three-pole vacuum tube is implemented on a semiconductor substrate.

2 illustrates a vacuum channel transistor according to another exemplary embodiment of the present invention. The vacuum channel transistor according to another embodiment of the present invention is characterized in that a low work function material is coated on the cathode layer 230 of the vacuum channel transistor according to the embodiment shown in FIG. 1. This is to cause the electron emission of the cathode layer 230 to occur at a lower gate voltage.

The low work function material 234 is preferably a material having a low work function such as pseudodiamond carbon or barium oxide.

3 illustrates a vacuum channel transistor according to another embodiment of the present invention. In the vacuum channel transistor according to another embodiment of the present invention, in the vacuum channel transistor according to the above-described embodiments, the anode layer 930 and the gate layer 530 between the anode layer 930 and the gate layer 530. Characterized in that it further comprises a control gate layer 630 spaced apart from the.

Like the gate layer 530, the control gate layer 630 includes an electron passing region to allow electrons emitted from the cathode layer 230 to reach the anode layer 930.

Hereinafter, the role of the control gate layer 630 will be described briefly. An anode current flows as electrons escaping the surface of the cathode layer 230 are moved by an electric field caused by the voltage of the anode layer 930 due to a potential difference between the gate layer 530 and the cathode layer 230. At this time, the higher the voltage applied to the anode layer 930, the greater the energy of electrons accelerated, so that the speed and efficiency of the device can be improved, but the current flowing in the conduction state of the device is applied to the voltage of the gate layer 530. This can increase the likelihood of an uncontrolled flashover. In addition, increasing the amount of electron emission from the cathode layer 230 due to the voltage of the anode layer 930 is equivalent to reducing the output resistance of the transistor, which is not preferable as a transistor characteristic. Therefore, in order to prevent a flashover phenomenon and a decrease in output resistance when the anode layer 930 voltage is very high, the control gate layer 630 is additionally disposed. The conductor constituting the control gate layer 630 should select a metal having a high work function to prevent direct electron emission from the control gate layer 630 due to the high pressure of the anode layer 930. In addition, a lower negative function material 234 of the cathode layer 230 is partially shielded from the high pressure of the anode layer 930 by applying a lower negative voltage to the control gate layer 630 than the cathode layer 230 electrode. In addition, since it is possible to lower the strength of the surface electric field or maintain the negative electric field, current control by the control gate layer 630 is possible, and the flashover phenomenon can be prevented. The role of the control gate used in the following other embodiments is the same.

4 illustrates a vacuum channel transistor according to another embodiment of the present invention. The vacuum channel transistor according to the embodiment shown in FIG. 4 is characterized in that in the above-described embodiments, the electron passing region of the gate layer 540 includes a plurality of holes formed in a lattice shape. That is, part of the gate layer 540 is characterized in that the grid. Due to the gate shape, the gap between the gate layer 540 and the cathode layer 230 is reduced, so that a stronger electric field can be formed at the same gate voltage. Therefore, more electrons are emitted from the cathode layer 230 when the same gate voltage is applied. The emitted electrons pass through the gate layer 230 in a lattice form and are transferred to the anode layer 930.

5 illustrates a vacuum channel transistor according to still another embodiment of the present invention. Referring to FIG. 5, a vacuum channel transistor according to another embodiment of the present invention is disposed spaced apart from the semiconductor substrate 100, the cathode layer 230 disposed on the semiconductor substrate 100, and the cathode layer 230. An anode layer 930, and a gate layer 540, a gate layer 540, and an anode spaced apart from the cathode layer 230 and the anode layer 930 between the cathode layer 230 and the anode layer 930. Two control gate layers 640 and 740 are spaced apart from the gate layer 540 and the anode layer 930 between the layers 930.

Here, the cathode layer 230 includes a heat generating resistor 233, and a low work function material 234 is coated on the cathode layer 230. The gate layer 540 and the control gate layers 640 and 740 include an electron passing region so that electrons emitted from the cathode layer 230 can reach the anode layer 930. Here, the electron passing region has a lattice form as described with reference to FIG. 4.

By including two control gate layers 540 and 640, the influence of the voltage of the anode layer 930 on the electron emission of the cathode layer 230 may be further reduced as compared with the case of including one control gate layer. . This form embodies the conventional 5-pole vacuum tube form.

6 is a view showing a vacuum channel transistor according to another embodiment of the present invention. Referring to FIG. 6, a vacuum channel transistor according to another embodiment of the present invention includes a heating electrode 220 including a semiconductor substrate 100 and a heating resistor 223 and spaced apart from the semiconductor substrate 100. A cathode layer 320 spaced apart from the heating electrode 220, an anode layer 920 spaced apart from the cathode layer 320, and a cathode layer between the cathode layer 220 and the anode layer 920. And a gate layer 520 spaced apart from the anode 220 and the anode layer 920. The gate layer 520 includes an electron passing region so that electrons emitted from the cathode layer 220 can reach the anode layer 920.

When voltage or current is applied to the heat generating resistor 223, the temperature thereof increases, which increases the temperature of the heating electrode 220, and the temperature of the heating electrode 220 increases, thereby causing the cathode layer ( The temperature of 320 is raised to promote electron emission.

By separating the cathode layer 320 and the heating electrode 220, it is possible to minimize the change in electrical characteristics of the entire transistor due to the electrical characteristics of the heating electrode 220 and the heating resistor 223.

This is a vacuum channel transistor in which a heat radiation three-pole vacuum tube is implemented on a semiconductor substrate.

7 illustrates a vacuum channel transistor according to still another embodiment of the present invention. Referring to FIG. 7, in the embodiment illustrated in FIG. 6, a low work function material 324 is coated on the cathode layer 320. The low work function material 324 can emit electrons at a low gate voltage.

8 illustrates a vacuum channel transistor according to another embodiment of the present invention. Referring to FIG. 8, a vacuum channel transistor according to another embodiment of the present invention may be formed on a semiconductor substrate 100, a channel insulator layer 120 and a channel insulator layer 120 disposed on the semiconductor substrate 100. A source 350 and a drain 950 spaced apart from each other, a gate 550 disposed under the channel insulator layer 120, and a heat generating resistor layer 253 disposed under the semiconductor substrate 100.

Here, the low work function material 354 is applied to the electron emission portion of the source 350. The gate 550 is disposed on the source 350 side in the lower portion of the region between the source 350 and the drain 950.

When a voltage (gate voltage) is applied between the source 350 and the gate 550, electrons are emitted from the source 350 into the vacuum. The electrons thus released are transferred to the drain 950 by an electric field formed between the drain 950 and the gate 550.

A low work function material is applied to the source 350 so that electrons can be emitted from the source 350 even at a lower gate voltage. The low work function material 354 is preferably a material having a low work function, such as pseudodiamond carbon or barium oxide.

In addition, the heat generating resistor layer 253 is disposed to facilitate electron emission from the source. When a voltage or current is applied to the heat generating resistor layer 253, its temperature increases, which directly or indirectly increases the temperature of the source 350 and the low work function material 354 to facilitate electron emission. The semiconductor substrate 100 and the heat generating resistor 253 may be electrically insulated by the insulator layer 110 so that the voltage or current applied to the heat generating resistor 253 does not affect other parts of the device.

9 illustrates a vacuum channel transistor according to another embodiment of the present invention. Referring to FIG. 9, a vacuum channel transistor according to another exemplary embodiment of the present inventive concept is disposed on a semiconductor substrate 100, a heating resistor layer 253 and a heating resistor layer 253 disposed on the semiconductor substrate 100. The insulator layer 110, the channel insulator layer 120 disposed on the insulator layer 110, the source 350, the drain 950, and the channel insulator that are spaced apart from each other on the channel insulator layer 120. Gate 550 disposed under layer 120.

The low work function material 354 is applied to the electron emission portion of the source 350, and the gate 550 is disposed on the source 350 side of the source 350 under the region between the source 350 and the drain 950.

In this embodiment, in the vacuum channel transistor according to the embodiment shown in FIG. 8, the position where the heat generating resistor 253 is inserted is changed in consideration of process convenience.

10 is a view showing a vacuum channel transistor according to another embodiment of the present invention. Referring to FIG. 10, the vacuum channel transistor according to another embodiment of the present invention further includes a control gate 650 disposed under the channel insulator layer 120 in the vacuum channel transistor according to the embodiment shown in FIG. 9. It is characterized by. The control gate 650 is spaced apart from the gate 550 at a lower portion of the region between the source 350 and the drain 950. The control gate 650 reduces the influence of the voltage of the drain 950 on the electron emission of the source 350.

11 is a view showing a vacuum channel transistor according to another embodiment of the present invention. Referring to FIG. 11, a vacuum channel transistor according to another embodiment of the present invention is disposed on a semiconductor substrate 100, a channel insulator layer 120 disposed on the semiconductor substrate 100, and a channel insulator layer 120. The source 360, the drain layer 960 spaced apart from the source 360, the gate 560 disposed under the channel insulator layer 120, and the heating resistor layer 263 disposed under the semiconductor substrate 100. It includes.

The low work function material 360 is applied to the electron emission region of the source 360, and the gate 560 is disposed on the source 360 side from the outside of the lower region of the source 360, and generates heat with the semiconductor substrate 100. The resistor layer 263 is electrically insulated.

When a voltage is applied between the source 360 and the gate 560, electrons are emitted from the source 360 into the vacuum, and the emitted electrons are discharged by the electric field between the drain layer 960 and the gate 560. 960).

Here, the source 360 has a form in which electrons can be emitted in the horizontal direction. Thus, source 360 may be a single layer with a portion of the side open to vacuum, or may include two or more separate sources.

A low work function material 364 is applied to the electron emission site of the source 360 to allow electrons to be emitted at a lower gate voltage. The low work function material 364 is preferably a material having a low work function, such as pseudodiamond carbon or barium oxide.

The temperature of the heat generating resistor layer 263 is increased when a voltage or current is applied, and the temperature of the source 360 is raised directly or indirectly due to the temperature rise of the heat generating resistor layer 263, and thus the electrons from the source 360 are increased. Makes release easier.

The semiconductor substrate 100 and the heat generating resistor 263 may be insulated by the insulator 110 so that the voltage or current applied to the heat generating resistor layer 263 does not electrically affect the transistor.

Although not shown, a control gate may be further disposed between the source 360 and the drain layer 960 to be spaced apart from the source 360 and the drain layer 960. In this case, the control gate serves to minimize the influence of the voltage of the drain layer 960 on the electron emission of the source 360.

12 illustrates a vacuum channel transistor according to another embodiment of the present invention. Referring to FIG. 12, a vacuum channel transistor according to another exemplary embodiment of the present inventive concept is disposed on a semiconductor substrate 100, a heating resistor layer 263 and a heating resistor layer 263 disposed on the semiconductor substrate 100. The insulator layer 110, the channel insulator layer 120 disposed on the insulator layer 110, the source 360 disposed on the channel insulator layer 120, and the drain layer spaced apart from the source 360. 960 and the gate 560 disposed under the channel insulator layer 120, and the control gate 660 spaced apart from the source 360 and the drain layer 960 between the source 360 and the drain layer 960. ).

The control gate 660 serves to minimize the role of the voltage of the drain layer 960 on the electron emission of the source 360.

Here, the source 360 has a form in which electrons can be emitted in the horizontal direction. Thus, source 360 may be a single layer with a portion of the side open to vacuum, or may include two or more separate sources.

A low work function material 364 is applied to the electron emission site of the source 360 to allow electrons to be emitted at a lower gate voltage. The low work function material 364 is preferably a material having a low work function, such as pseudodiamond carbon or barium oxide.

The temperature of the heat generating resistor layer 263 is increased when a voltage or current is applied, and the temperature of the source 360 is raised directly or indirectly due to the temperature rise of the heat generating resistor layer 263, and thus the electrons from the source 360 are increased. Makes release easier.

13 illustrates a vacuum channel transistor according to another embodiment of the present invention. The vacuum channel transistor shown in FIG. 13 is characterized by including two control gates 660 and 760. By including two control gates 660 and 760, the influence on the electron emission of the drain layer 960 voltage can be further reduced and the flashover phenomenon can be more easily controlled than when only one is included. .

While the invention has been described in the form of some preferred embodiments, those skilled in the art will be able to realize various modifications, additions, modifications and equivalents of the invention by the following detailed description thereof. Accordingly, the present invention is intended to embrace such modifications, additions, variations, and equivalent inventions that fall within the spirit and scope of the invention.

By the vacuum channel transistor provided by the present invention, the influence of the voltage of the drain on the electron emission of the source can be reduced.

In addition, electrons can be emitted from the source even at a lower gate voltage as compared to conventional vacuum channel transistors.

Claims (14)

Semiconductor substrates; A cathode layer disposed on the semiconductor substrate; An anode layer spaced apart from the cathode layer; And A gate layer spaced apart from the cathode layer and the anode layer between the cathode layer and the anode layer, The cathode layer includes a heat generating resistor, And the gate layer includes an electron passing region to allow electrons emitted from the cathode layer to reach the anode layer. The method of claim 1, And the cathode layer and the semiconductor substrate are spaced apart from each other. The method of claim 1, And a low work funtion material is applied on the cathode layer. The method of claim 1, At least one control gate layer disposed between the anode layer and the gate layer and spaced apart from the anode layer and the gate layer, And the control gate layer includes the same electron passing region as the gate layer. The method of claim 1, And the electron passing region includes a plurality of holes drilled in a lattice form. Semiconductor substrates; A heating electrode including a heating resistor and spaced apart from the upper portion of the semiconductor substrate; A cathode layer disposed spaced apart from the heating electrode; An anode layer spaced apart from the cathode layer; And A gate layer spaced apart from the cathode layer and the anode layer between the cathode layer and the anode layer, And the gate layer includes an electron passing region to allow electrons emitted from the cathode layer to reach the anode layer. The method of claim 6, And a low work function material is applied on the cathode layer. Semiconductor substrates; A channel insulator layer disposed on the semiconductor substrate; A source and a drain disposed on the channel insulator layer and spaced apart from each other; A gate disposed under the channel insulator layer; And A heating resistor layer disposed under the semiconductor substrate, A low work function material is applied to the electron emission site of the source, The gate is disposed on the source side under the region between the source and the drain, And the semiconductor substrate and the heating resistor layer are electrically insulated. Semiconductor substrates; A heat generating resistor layer disposed on the semiconductor substrate; An insulator layer disposed on the heat generating resistor layer; A channel insulator layer disposed on the insulator layer; A source and a drain disposed on the channel insulator layer and spaced apart from each other; And A gate disposed under said channel insulator layer, A low work function material is applied to the electron emission site of the source, And the gate is disposed on the source side in a lower portion of the region between the source and the drain. The method of claim 9, Further comprising a control gate disposed under the channel insulator layer, And the control gate is spaced apart from the gate under a region between the source and the drain. Semiconductor substrates; A channel insulator layer disposed on the semiconductor substrate; A source disposed on the channel insulator layer; A drain layer spaced apart from the source; A gate disposed under the channel insulator layer; And A heating resistor layer disposed under the semiconductor substrate, A low work function material is applied to the electron emission site of the source, The gate is disposed on the source side outside the source lower region, And the semiconductor substrate and the heating resistor layer are electrically insulated. The method of claim 11, And at least one control gate disposed between the source and the drain layer and spaced apart from the source and the drain layer. Semiconductor substrates; A heat generating resistor layer disposed on the semiconductor substrate; An insulator layer disposed on the heat generating resistor layer; A channel insulator layer disposed on the insulator layer; A source disposed on the channel insulator layer; A drain layer spaced apart from the source; And A gate disposed under said channel insulator layer, A low work function material is applied to the electron emission site of the source, And the gate is disposed on the source side outside the source lower region. The method of claim 13, And at least one control gate disposed between the source and the drain layer and spaced apart from the source and the drain layer.

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