KR20080081562A - Organic light emitting display device and manufacturing method thereof - Google Patents

Abstract

Disclosed are an organic light emitting display device and a method of manufacturing the same for improving display quality. The organic light emitting display device includes a substrate, first electrodes, an organic light emitting layer, and second electrodes. In the substrate, a plurality of unit pixels are defined in a first direction and a second direction crossing the first direction. The first electrodes are formed on the substrate in correspondence with the unit pixels. The organic light emitting layer is formed on the first electrode corresponding to the unit pixel. The second electrodes are formed on the substrate on which the organic light emitting layer is formed, and extend to cover the unit pixels arranged in a line in either of the first direction and the second direction. Since the second electrodes are separately formed according to the columns of the unit pixels, power may be independently applied to each of the second electrodes. Accordingly, the size of the power applied to each of the second electrodes can be selectively adjusted, thereby improving the display quality of the image.

Description

Organic electroluminescent display and manufacturing method thereof {ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME}

1 is a schematic diagram of an organic light emitting display device according to an embodiment of the present invention.

FIG. 2 is an enlarged view illustrating an enlarged area A of FIG. 1.

3 is a cross-sectional view taken along line II ′ of FIG. 2.

4 is a schematic view illustrating a second electrode, a first dummy pattern, and a second dummy pattern separately among components formed in the organic light emitting display device.

5 through 14 are process diagrams for describing a method of manufacturing the organic light emitting display device illustrated in FIG. 3.

FIG. 15 is a schematic diagram separately illustrating a second electrode, a first dummy pattern, and a second dummy pattern among components formed in an organic light emitting display device according to another exemplary embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100 organic light emitting display device 110 base substrate

TFT1: Switching Thin Film Transistor TFT2: Driving Thin Film Transistor

PE: first electrode EL: organic light emitting layer

CE: Second electrode ELD: Organic light emitting device

W: bulkhead U: undercut portion

DM1: first dummy pattern DM2: second dummy pattern

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an organic light emitting display device and a method of manufacturing the same can be applied to a plurality of independent power supply (Vcom).

In general, an organic light emitting display device includes a red pixel in which a red light emitting layer is formed to emit red light, a blue pixel in which a blue light emitting layer is formed to emit blue light, and a green pixel in which a green light emitting layer is formed to emit green light. In this case, a common electrode formed in one pattern is formed on the entire panel including the red, blue, and green pixels, and the same common voltage is applied to the entire panel.

However, since the color efficiencies of the red, blue, and green pixels are not substantially the same, when the common voltage of the same magnitude is applied to the red, blue, and green pixels, the display quality is deteriorated.

Accordingly, the technical problem of the present invention is to solve such a conventional problem, and an object of the present invention is to provide an organic light emitting display device for improving display quality.

Another object of the present invention is to provide a method of manufacturing the organic light emitting display device.

In order to achieve the above object of the present invention, an organic light emitting display device according to an embodiment includes a substrate, first electrodes, an organic light emitting layer, and second electrodes. In the substrate, a plurality of unit pixels are defined in a first direction and a second direction crossing the first direction. The first electrodes are formed on the substrate in correspondence with the unit pixels. The organic light emitting layer is formed on the first electrode corresponding to the unit pixel. The second electrodes are formed on the substrate on which the organic light emitting layer is formed, and extend to cover the unit pixels arranged in a line in either of the first direction and the second direction.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including sequentially forming an insulating film and a metal layer on a substrate on which first electrodes are formed corresponding to unit pixels; First pattern parts extending in a first direction corresponding to a spaced part between the unit pixels, and second pattern parts extending in a second direction crossing the first direction between the first pattern parts on a metal layer; Forming a lattice-shaped photoresist pattern, first etching the metal layer exposed between the photoresist patterns, and etching the insulating layer exposed between the photoresist patterns to form a grid-shaped partition wall; Simultaneously removing the second pattern portions, and second etching the exposed metal layer by removing the second pattern portions. Forming a first dummy pattern extending in a first direction, forming an undercut portion between the first dummy pattern and the partition by partially etching the partition, and forming an organic light emitting layer in the unit pixels And depositing a conductive material layer on the substrate on which the organic light emitting layer is formed, and separating the second dummy pattern from the second dummy pattern by the second dummy pattern and the undercut part formed on the first dummy pattern. Forming them.

According to the organic light emitting display device and a manufacturing method thereof, the display voltage of the image can be improved by selectively adjusting the magnitude of the common voltage according to the row or column of the unit pixels.

Hereinafter, with reference to the accompanying drawings, it will be described in detail the present invention.

1 is a schematic diagram of an organic light emitting display device according to an embodiment of the present invention.

FIG. 2 is an enlarged view illustrating an enlarged area A of FIG. 1.

3 is a cross-sectional view taken along line II ′ of FIG. 2.

1 to 3, the organic light emitting display device includes a base substrate 110, a gate wiring GL, a gate insulating layer 120, a data wiring DL, a power wiring VL, and a switching thin film transistor TFT1. ), A driving thin film transistor TFT2, a storage capacitor SC, a passivation layer 140, a first electrode PE, a partition wall W, an organic light emitting layer EL, and a second electrode CE.

The base substrate 110 has a plate shape and is made of a transparent material.

The gate lines GL are formed long on the base substrate 110 in the first direction X, and a plurality of gate lines GL are formed in parallel along the second direction Y. The second direction Y is, for example, perpendicular to the first direction X.

The gate insulating layer 120 is formed on the base substrate 11 on which the gate line GL is formed. The gate insulating layer 120 is made of, for example, silicon nitride (SiNx). The data lines DL are formed to extend in the second direction Y to intersect the gate lines GL on the gate insulating layer 120, and a plurality of data lines DL are formed in parallel in the first direction X. FIG.

In this case, as the data lines DL and the gate lines GL cross each other, a plurality of unit pixels P arranged in the first direction X and the second direction Y are defined.

 Each of the unit pixels P includes a switching thin film transistor TFT1, a driving thin film transistor TFT2, a storage capacitor SC, and an organic light emitting diode ELD.

The power line VL is formed parallel to the data line DL on the gate insulating layer 120, and is, for example, spaced apart from the data line DL in a direction opposite to the first direction X by a predetermined distance. . The power line VL is electrically connected to the driving thin film transistor TFT2 to apply a driving current.

The switching thin film transistor TFT1 includes a switching gate electrode GE1, a switching source electrode SE1, a switching drain electrode DE1, and a switching active layer AT1.

The switching gate electrode GE1 extends in the second direction Y from the gate line GL. The switching source electrode SE1 extends from the data line DL in the first direction X and overlaps a part of the switching gate electrode GE1.

The switching drain electrode DE1 is formed on the same layer as the source electrode SE1 and is spaced apart from the switching source electrode SE1 by a predetermined distance so as to face the switching source electrode SE1. In this case, the switching drain electrode DE1 is formed to overlap a part of the switching gate electrode GE1.

The switching drain electrode DE1 is formed to extend in the first direction X, and the driving gate electrode GE2 of the driving thin film transistor TFT2 is formed through the first contact hole 122 formed in the gate insulating layer 120. Is electrically connected to the

The switching active layer AT1 is formed between the gate insulating layer 120, the switching source electrode SE1, and the switching drain electrode DE1, and overlaps the switching gate electrode GE1. For example, the switching active layer AT1 has a structure in which a semiconductor layer (a) made of polycrystalline silicon and an ohmic contact layer (b) made of ion-doped polycrystalline silicon are stacked. In this case, the ohmic contact layer b is removed from the switching source electrode SE1 and the switching drain electrode DE1 at a spaced portion, and the semiconductor layer a is removed.

The switching active layer AT1 may have a structure in which a semiconductor layer a made of amorphous silicon and an ohmic contact layer b made of ion doped amorphous silicon are stacked. In addition, the switching active layer AT1 may be entirely made of amorphous silicon, and only a local region where an electrical channel is mainly formed may be made of polycrystalline silicon.

The driving thin film transistor TFT2 is formed in the unit pixel P and includes a driving gate electrode GE2, a driving source electrode SE2, a driving drain electrode DE2, and a driving active layer AT2.

The driving gate electrode GE2 is formed on the same layer as the switching gate electrode GE1, is electrically connected to the switching drain electrode DE1 through the first contact hole 122, and extends in the second direction. do.

The driving source electrode SE2 extends in a direction opposite to the first direction from the power line VL and overlaps a portion of the driving gate electrode GE2 on the gate insulating layer 120.

The driving drain electrode DE2 is formed on the same layer as the driving source electrode SE2 and is spaced apart from the driving source electrode SE2 by a predetermined distance so as to face the driving source electrode SE2. In addition, the driving drain electrode DE2 is formed to overlap with a portion of the driving gate electrode GE2 and extends in a direction opposite to the first direction. In this case, the driving drain electrode DE2 is electrically connected to the first electrode PE of the organic light emitting diode ELD through the second contact hole 132.

The storage capacitor SC is formed in the unit pixel P to maintain a driving voltage applied to the driving gate electrode GE2. The storage capacitor SC includes, for example, a lower electrode and an upper electrode overlapping each other with the gate insulating layer 120 interposed therebetween. In this case, the lower electrode is a driving gate electrode GE2 extending in the first direction X, and the upper electrode is a power line VL.

The passivation layer 140 is formed on the base substrate 110 on which the pixel layer including the wirings GL, DL, and VL, the switching thin film transistor TFT1, the driving thin film transistor TFT2, and the storage capacitor SC are formed. Is formed.

The passivation layer 140 is made of, for example, silicon nitride (SiNx). The first electrode PE corresponding to each unit pixel P is formed on the passivation layer 140.

In detail, the first electrode PE is electrically connected to the driving thin film transistor TFT2. The first electrode PE receives a driving current from the driving thin film transistor TFT2.

On the base substrate 110 on which the first electrode PE is formed, a lattice-shaped partition wall W is formed to partition the space in the unit pixel P in three dimensions.

The first dummy pattern DM1 is formed between the unit pixels P adjacent to each other in the first direction X and extends in the second direction Y. For example, the first dummy pattern DM1 may be formed of a metal material and have a width wider than the width of the partition wall W formed under the first dummy pattern DM1. Accordingly, an undercut portion U is formed between the first dummy pattern DM1 and the partition wall W due to the above-described width difference.

An organic light emitting layer EL made of an organic light emitting material is formed in the unit P partitioned by the partition wall W. In FIG. The organic light emitting layer EL may include, for example, a red light emitting layer R emitting red light, a green light emitting layer G emitting green light, and a blue light emitting layer B emitting blue light, and the red, green, and blue light emitting layers. Each of (R, G, B) is arranged in a line in the second direction (Y). Meanwhile, the organic light emitting layer EL may further include a white light emitting layer, and even when the white light emitting layer is formed, the organic light emitting layer EL may be arranged in a line in the second direction (Y).

A hole injection layer 151 and a hole transport layer 152 may be further formed between the organic light emitting layer EL and the first electrode PE, and the electron transport layer 153 may be formed on the organic light emitting layer EL. The electron injection layer 154 may be further formed.

In this case, unlike the organic light emitting layer EL formed in the unit pixel P, the hole injection layer 151, the hole transport layer 152, the electron injection layer 153, and the electron transport layer 154 are formed in the partition wall ( W) is also laminated and formed sequentially. In this case, the hole injection layer 151, the hole transport layer 152, the electron transport layer 153, and the electron injection layer 154 formed in the unit pixel P and the hole injection layer formed on the partition wall W are formed. The 151, the hole transport layer 152, the electron transport layer 153, and the electron injection layer 1545 are physically separated by the undercut portion U.

4 is a schematic view illustrating a second electrode, a first dummy pattern, and a second dummy pattern separately among components formed in the organic light emitting display device.

2 to 4, second electrodes CE are formed on the base substrate 110 on which the electron injection layer 154 is formed. The second electrode CE extends in the second direction Y to cover the plurality of unit pixels P arranged in a line in the second direction Y, and the second electrodes CE extend in the first direction. (X) are listed in parallel.

Voltages are independently applied to the second electrodes CE. For example, the same voltages may be applied to the second electrodes CE formed on the organic light emitting layer EL having the same color.

Alternatively, the same voltage is applied to the second electrode CE formed on the organic electroluminescent layer EL of two colors, and a separate voltage is applied to the second electrode CE formed on the organic electroluminescent layer EL of the remaining colors. May be applied.

The first electrode PE, the organic light emitting layer EL, and the second electrode CE sequentially stacked in the unit pixel P constitute an organic light emitting diode ELD, and the organic light emitting diode ( The ELD generates light by the voltage applied to the first electrode PE and the second electrode CE.

Briefly describing the principle that light is generated in the organic light emitting diode ELD, the first electrode PE receives a driving current from the driving thin film transistor TFT2 and the second electrode applies a common voltage from the outside. Receive.

Specifically, the first electrode PE, which is the anode electrode ANODE of the organic light emitting device ELD, receives a hole by the driving current, and the second electrode CE, which is the cathode electrode CATHODE. Is supplied with electrons by the common voltage.

Holes supplied to the first electrode PE and electrons supplied to the second electrode CE are coupled to each other in the organic light emitting layer EL by an electric field generated between the two electrodes. When the holes and the electrons are bonded to each other in the organic electroluminescent layer EL, excitons, which are molecules in an excited state, are generated, and the excitons fall to the ground state to generate light. . The light thus generated is emitted to the display screen to display an image.

According to an embodiment of the present invention, since power may be independently applied to each of the second electrodes CE, power of each of the second electrodes CE may be applied according to the color of the organic light emitting layer EL. You can adjust the size. Accordingly, since the light emission intensity may be adjusted according to the color of the organic light emitting layer EL, the luminance of the specific color may be adjusted to be high or low. Therefore, the display quality of the image can be improved.

In addition, when the performance decreases according to the difference in lifespan of each organic electroluminescent layer EL, the power intensity applied to the second electrode CE formed on the organic electroluminescent layer EL of the color in which the performance is degraded is separately controlled. This can compensate for such degradation. Accordingly, it is possible to maintain a balance for each of the red, green, and blue colors.

Meanwhile, a second dummy pattern DM2 is formed between the second electrodes CE in the same layer as the second electrode CE and patterned in the same shape as the first dummy pattern DM1. do.

The second dummy pattern DM2 is a pattern electrically and physically separated from the second electrode CE, and the barrier rib W and the first layer are formed during a metal deposition process for forming the second electrode CE. The pattern is automatically formed by the undercut portions U between the dummy patterns DM1.

Meanwhile, a protective layer may be further formed on the base substrate 110 on which the second electrode CE and the second dummy pattern DM2 are formed to protect the organic light emitting diode ELD from moisture in the air and external shocks. In addition, a cover substrate may be bonded to the protective layer.

5 through 14 are process diagrams for describing a method of manufacturing the organic light emitting display device illustrated in FIG. 3.

Hereinafter, a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 5 to 14.

2 and 5, a first metal layer (not shown) is formed on the base substrate 110. The first metal layer may be formed of, for example, a metal such as chromium, aluminum, tantalum, molybdenum, titanium, tungsten, copper, silver, or an alloy thereof, or may be formed of two or more layers having different physical properties. have.

 Subsequently, the first metal layer is patterned by a photo-etching process to form a first metal pattern including a gate line GL, a switching gate electrode GE1, and a driving gate electrode GE2.

Next, the gate insulating layer 120, the semiconductor layer a, and the ohmic contact layer b are successively formed on the base substrate 110 on which the first metal pattern is formed by using a chemical vapor deposition method.

The gate insulating layer 120 is made of, for example, silicon nitride or silicon oxide. The semiconductor layer (a) is made of, for example, amorphous silicon. The ohmic contact layer (b) is made of, for example, ion-doped amorphous silicon.

Alternatively, all or part of the semiconductor layer (a) and the ohmic contact layer (b) including amorphous silicon may be crystallized to form the semiconductor layer (a) and ohmic contact layer (b) including polycrystalline silicon. .

Subsequently, the semiconductor layer a and the ohmic contact layer b are patterned by a photo-etch process to overlap the switching active layer AT1 overlapping the switching gate electrode GE1 and the driving gate electrode GE2. The driving active layer AT2 is formed.

In addition, the gate insulating layer 120 is patterned by a photo-etching process to form a first contact hole 122 exposing one end of the driving gate electrode GE1.

2 and 6, a second metal layer (not shown) is formed on the base substrate 110 on which the switching active layer AT1, the driving active layer AT2, and the first contact hole 122 are formed. . The second metal layer may be formed of, for example, a metal such as chromium, aluminum, tantalum, molybdenum, titanium, tungsten, copper, silver, or an alloy thereof, or may be formed of two or more layers having different physical properties. have.

Subsequently, the second metal layer is patterned by a photo-etching process so that the data line DL, the power line VL, the switching source electrode SE1, the switching drain electrode DE1, the driving source electrode DE2, and the driving drain electrode are formed. A second metal pattern including (DE2) is formed. In this case, the switching drain electrode DE2 and the driving gate electrode GE2 are electrically connected to each other through the first contact hole 122 formed in the gate insulating layer 120.

Next, the ohmic contact layer (b) exposed from a spaced portion of the switching source electrode SE1 and the switching drain electrode DE1 and a spaced portion of the driving source electrode SE2 and the driving drain electrode DE2. Etch

Accordingly, the switching thin film transistor TFT1 including the switching gate electrode GE1, the switching active layer AT1, the switching source electrode SE1, and the switching drain electrode DE1, the driving gate electrode GE2, and the driving The driving thin film transistor TFT2 including the active layer AT2, the driving source electrode SE2, and the driving drain electrode DE2 is formed.

2 and 7, the passivation layer 140 is formed on the base substrate 100 on which the switching thin film transistor TFT1 and the driving thin film transistor TFT2 are formed. The passivation layer 140 may be formed of, for example, silicon nitride or silicon oxide, and may be formed by a chemical vapor deposition method.

Subsequently, the passivation layer 140 is patterned by a photo-etching process to form a second contact hole 132 exposing one end of the driving drain electrode DE2.

Next, a first conductive material layer (not shown) is deposited on the passivation layer on which the second contact hole 132 is formed by a sputtering method. The first conductive material layer (not shown) may be formed of a transparent material such as indium tin oxide, indium zinc oxide, or amorphous indium tin oxide, or may be formed of a metal material that reflects light. Subsequently, the first conductive material layer is patterned by a photo-etching process to form a first electrode PE corresponding to the unit pixel P. The first electrode PE is in electrical contact with the driving thin film transistor TFT2 through the second contact hole 132 and receives a pixel voltage from the driving thin film transistor TFT2.

Referring to FIG. 8, an insulating film IS is formed on a base substrate on which the first electrode PE is formed. The insulating film IS may form an inorganic film material such as SiO 2 or TiO 2 by CVD, coating, sputtering, vapor deposition, or the like. Moreover, it can also form using organic film materials, such as an acrylic resin and polyimide resin.

Next, a third metal layer ML3 is formed on the insulating film IS. The third metal layer ML3 may be formed of, for example, a metal such as chromium, aluminum, tantalum, molybdenum, titanium, tungsten, copper, silver, or an alloy thereof. Next, a photoresist film is coated on the third metal layer ML3 and patterned by a photo process to form a lattice-shaped photoresist pattern PR corresponding to the spaced portion between the unit pixels P.

In this case, the photoresist film is exposed and developed by using a mask that can adjust the exposure amount for each region, such as a slit mask or a halftone mask. Accordingly, the photoresist pattern PR may have a first pattern portion P1 having a first thickness t1 and a second pattern having a second thickness t2 which is about half the thickness of the first thickness t1. It is formed to include the portions P2.

For example, the first pattern part P1 may be formed in a spaced portion of the unit pixels adjacent to each other in the first direction X and extend in the second direction Y. The second pattern portions P2 are formed in the separation portions of the unit pixels P adjacent to each other in the second direction Y, and are disposed in the first direction X between the first pattern portions P1. Is extended.

Referring to FIG. 9, the third metal layer ML3 exposed through the photoresist pattern PR is first etched. The first etching may be performed by a wet etching process. Accordingly, similar to the photoresist pattern PR, a lattice-shaped third metal layer ML3 remains on the insulating layer IS. In this case, since the third metal layer ML3 is isotropically etched in the wet etching process, the third metal layer ML3 may be partially embedded in a side surface of the photoresist pattern PR.

9 and 10, the insulating layer IS exposed between the photoresist patterns PR is etched by a dry etching process. Meanwhile, during the dry etching process of etching the insulating layer IS, the photoresist pattern PR is also etched by a predetermined thickness due to the collision of plasma.

In detail, in the dry etching process of etching the insulating layer IS, all of the second pattern portions P2 of the second thickness t2 are removed, and the first pattern portions P1 that were the first thickness t1 may be formed. It proceeds until it remains to a predetermined thickness.

As a result, a lattice-shaped partition wall W is formed on the base substrate 110 by etching the insulating layer IS and corresponding to the spaced portions of the unit pixels P. Referring to FIG. A three-dimensional space is partitioned in the unit pixels P by the partition wall W. FIG.

Meanwhile, in the present invention, since the partition W is patterned by a photo-etching process using a separate photoresist pattern PR, a photosensitive material may not be used as a material of the partition W. As a result, the material selection of the partition W becomes wider, so that not only an organic layer but also an inorganic layer may be used, and a material resistant to deterioration due to moisture may be selected, thereby improving the lifespan of the organic light emitting display device. .

Referring to FIGS. 10 and 11, the second metal layer ML3 exposed by removing the second pattern portion P2 is secondly etched. It is preferable that the second etching is also performed by wet etching.

Accordingly, the partition wall W is formed of the third metal layer ML3, and is formed between the unit pixels P adjacent to each other in the first direction X and extends in the second direction Y. First dummy pattern DM1 is formed.

Referring to FIG. 12, a portion of the partition wall W is etched by a dry etching process to reduce the width of the partition wall W formed under the first dummy pattern DM1 rather than the width of the first dummy pattern DM1. . Accordingly, the undercut portion U is formed between the first dummy pattern DM1 and the partition wall W formed under the first dummy pattern DM1 by the above-described width difference.

Meanwhile, the first pattern portion P1 remaining in the dry etching process may be partially etched. When all of the first pattern portion P1 remaining during the dry etching process is not removed, a separate strip process for removing the first pattern portion P1 is performed.

Referring to FIG. 13, a hole injection layer 151, a hole transport layer 152, an organic light emitting layer EL, an electron transport layer 153, and electrons are formed on the base substrate 110 on which the first dummy pattern DM1 is formed. The injection layer 154 is sequentially formed. The hole injection layer 151, the hole transport layer 152, the organic light emitting layer EL, the electron transport layer 153, and the electron injection layer 154 may be formed using an inkjet device, or may be formed by a deposition process. It may be. On the other hand, after the organic electroluminescent layer EL is formed, a process of patterning the organic electroluminescent layer EL to correspond to the unit pixel P may be further performed before forming the electron transport layer 153. have.

Meanwhile, in the process of forming the hole injection layer 151, the hole transport layer 152, the organic light emitting layer EL, the electron transport layer 153, and the electron injection layer 154, the hole injection layer 151 and the hole are formed. The transport layer 152, the organic light emitting layer EL, the electron transport layer 153, and the electron injection layer 154 are formed on the first dummy pattern DM1 by the undercut unit U and the unit pixel. The region formed in (P) is physically separated.

Referring to FIG. 14, a second conductive material layer is deposited on the base substrate 110 on which the electron injection layer 154 is formed. The second conductive material layer may be formed of a transparent material such as indium tin oxide, indium zinc oxide, amorphous indium tin oxide, or may be formed of a metal material that reflects light. When the first electrode PE is formed of a metal material, the second conductive material layer may be formed of a transparent material. Similarly, when the first electrode is formed of a transparent material, the second conductive material layer is preferably formed of a metal material.

Meanwhile, during the deposition process of forming the second conductive material layer, a second conductive material layer formed on the first dummy pattern DM1 and the second pixel formed in the unit pixel P by the undercut portion U. 2 The layer of conductive material is physically and electrically separated.

Accordingly, a second dummy pattern DM2 formed of a second conductive material layer and having the same shape as the first dummy pattern DM1 is formed on the first dummy pattern DM1. In addition, a second electrode CE made of the second conductive material layer and extending in the second direction Y is formed on the unit pixels arranged in a row in the second direction Y. The plurality of second electrodes CE is formed on the base substrate, and each of the second electrodes CE is arranged in parallel in the first direction X. The second dummy pattern DM is formed between the second electrodes CE.

According to the present invention, since the second electrodes CE are separately formed according to the columns of the unit pixels P, power may be independently applied to each of the second electrodes CE. In this case, since the organic light emitting layer EL having the same color is arranged in the second direction Y which is the same as the extending direction of the second electrode CE, the organic light emitting layer ( The size of the power applied to each of the second electrodes CE may be adjusted according to the color of the EL).

Therefore, since the light emission intensity of the organic light emitting layer EL may be adjusted according to the color of the organic light emitting layer EL, the luminance of a specific color may be adjusted high or low. Accordingly, the display quality of the image can be improved.

In addition, when the performance decreases according to the difference in lifespan of each organic electroluminescent layer EL, the power intensity of the second electrode CE formed on the organic electroluminescent layer EL of the color in which the performance is degraded is adjusted separately. The same performance degradation can be compensated for. Accordingly, it is possible to maintain a balance for each of the red, green, and blue colors.

FIG. 15 is a schematic diagram separately illustrating a second electrode, a first dummy pattern, and a second dummy pattern among components formed in an organic light emitting display device according to another exemplary embodiment of the present invention.

An organic light emitting display device according to another embodiment of the present invention has the same configuration as the embodiment of the present invention except for the second electrode CE, the first dummy pattern DM1, and the second dummy pattern DM2. Duplicate descriptions of the same components will be omitted. In addition, the same reference numerals are assigned to the same components.

2 and 15, the second electrode CE of the organic light emitting display device according to another exemplary embodiment extends in the same first direction X as the direction in which the gate line GL extends. It extends long to cover the plurality of unit pixels P and is arranged in the second direction Y.

The first dummy pattern DM1 and the second dummy pattern DM2 extend in the first direction X between the second electrodes CE.

Accordingly, since the power supplied to the second electrodes CE may be adjusted for each gate line GL, a reverse bias may be applied to the organic light emitting diode ELD. Accordingly, since the degradation of the organic light emitting diode ELD can be restored to a certain level, the lifespan of the organic light emitting display device can be improved.

As described above, according to the present invention, since the second electrode of the organic light emitting diode may be separated according to the columns of the unit pixels, power may be independently applied to each of the second electrodes. Accordingly, according to the color of the organic light emitting layer formed under the second electrode, the intensity of the power applied to the second electrode may be adjusted to adjust the luminance of the specific color higher or lower. Accordingly, the display quality of the image can be improved.

In addition, when a performance degradation occurs in the organic light emitting layer of a specific color due to the color life difference of the organic light emitting layer, such performance degradation may be controlled by separately controlling the power intensity of the second electrode formed on the organic light emitting layer in which the performance decreases. You can compensate.

In addition, since the second electrode of the organic light emitting diode may be separately formed according to the columns of the unit pixels, power applied to the second electrode may be separately provided for each gate line. Accordingly, since a reverse bias can be applied to the organic light emitting diode, the lifespan of the organic light emitting diode can be improved.

Although described above with reference to the embodiments, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below. I can understand.

Claims (17)

A substrate in which a plurality of unit pixels are defined in a first direction and a second direction crossing the first direction; First electrodes formed on the substrate corresponding to the unit pixels; An organic light emitting layer formed on the first electrode corresponding to the unit pixel; And An organic light emitting display device formed on the substrate on which the organic light emitting layer is formed and including a plurality of second electrodes extending to cover the unit pixels arranged in a line in one of the first direction and the second direction . The organic light emitting display device of claim 1, wherein a voltage is independently applied to each of the second electrodes. The organic light emitting display of claim 1, wherein the organic light emitting layer comprises a red light emitting layer, a green light emitting layer, and a blue light emitting layer, and each of the red light emitting layer, the green light emitting layer, and the blue light emitting layer is arranged in a line in the first direction. Device. The organic light emitting display device of claim 3, wherein the second electrode extends in the first direction to cover the unit pixels arranged in a line in the first direction. The method of claim 1, wherein the substrate includes a data line extending in the first direction and a gate line extending in the second direction, wherein the plurality of unit pixels are defined by the gate line and the data line. An organic light emitting display device. The organic light emitting display device of claim 5, wherein the second electrode extends in the second direction and covers the unit pixels arranged in a line in the second direction. The organic light emitting display device as claimed in claim 5, wherein a partition wall is formed between the first electrode and the second electrode to divide and separate the unit pixels in correspondence to a spaced portion between the unit pixels. The organic light emitting diode of claim 7, wherein a first dummy pattern is formed on the barrier rib in the same layer as the second electrode, and extends in the same direction as the second electrode between the second electrodes. Display device. The organic light emitting diode of claim 7, further comprising a second dummy pattern formed between the first dummy pattern and the partition wall in the same shape as the first dummy pattern, and having a wider width than the partition wall. Display device. The organic light emitting display device of claim 9, wherein the second dummy pattern is formed of a metal material. Sequentially forming an insulating film and a metal layer on the substrate on which the first electrodes are formed corresponding to the unit pixels; The first pattern portions extending in a first direction and the second pattern portions extending in a second direction crossing the first direction between the first pattern portions corresponding to the spaced portions between the unit pixels on the metal layer. Forming a photoresist pattern having a lattice shape; First etching the metal layer exposed between the photoresist patterns; Etching the insulating film exposed between the photoresist patterns to form a grid-shaped partition wall and simultaneously removing the second pattern portions; Forming a first dummy pattern extending in the first direction by second etching the exposed metal layer by removing the second pattern parts; Partially etching the barrier rib to form an undercut portion between the first dummy pattern and the barrier rib; Forming an organic light emitting layer in the unit pixels; And Depositing a conductive material layer on the substrate on which the organic light emitting layer is formed, and forming second electrodes separated from the second dummy pattern by the second dummy pattern and the undercut part formed on the first dummy pattern; A method of manufacturing an organic light emitting display device comprising the step. The organic light emitting display device of claim 11, wherein the first pattern portion is formed to a first thickness, and the second pattern portion is formed to a second thickness corresponding to about half of the first thickness. Way. The method of claim 12, further comprising removing the remaining first pattern portions before forming the organic light emitting layer. The method of claim 11, wherein the second electrode is formed to cover a plurality of unit pixels arranged in a line in the first direction. The method of claim 11, wherein forming the organic light emitting layer is Forming a red light emitting layer, a green light emitting layer, and a blue light emitting layer, wherein each of the red light emitting layer, the green light emitting layer, and the blue light emitting layer is arranged in a line in the first direction. . 12. The method of claim 11, wherein between the first electrode and the substrate A gate line extending in the first direction; A data line extending in the second direction; And The method may further include forming at least one thin film transistor that is electrically connected to the gate line and the data line and is formed in the unit pixel and electrically connected to the first electrode. Way. The method of claim 11, wherein forming the organic light emitting layer is And forming a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

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