KR20080028663A - Light Emitting Diode Having Asilion Active Layer And Method For Manufacturing The Same - Google Patents

Abstract

A light emitting diode having an AlGaInP active layer and a method of manufacturing the same are disclosed. The method includes forming semiconductor layers including an AlGaInP active layer on a sacrificial substrate. On the other hand, a base substrate on which an insulating layer is formed is prepared. Thereafter, the semiconductor layers are bonded to the insulating layer, and the sacrificial substrate is separated. Subsequently, the semiconductor layers are patterned on the base substrate to form a plurality of light emitting cells spaced apart from each other. The light emitting cells each include a patterned first conductive lower semiconductor layer, an AlGaInP active layer, and a second conductive upper semiconductor layer. In this case, a portion of the patterned first conductive lower semiconductor layer is exposed. Thereafter, wirings for connecting the light emitting cells in series are formed. Accordingly, a plurality of light emitting cells may be insulated from the base substrate by the insulating layer and connected to each other in series by wirings, thereby manufacturing a light emitting diode capable of being driven by an AC power source.

Description

LIGHT EMITTING DIODE HAVING ACTIVE LAYER AND METHOD OF FABRICATING THE SAME

1 is a cross-sectional view illustrating a light emitting diode having a conventional AlInGaP-based active layer.

2A and 2B are circuit diagrams for describing an operating principle of a light emitting diode having an AlInGaP-based active layer according to embodiments of the present invention.

3 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting diode having an AlInGaP active layer according to an embodiment of the present invention.

8 is a cross-sectional view for describing a method of manufacturing a light emitting diode having an AlInGaP active layer according to another embodiment of the present invention.

The present invention relates to a light emitting diode, and more particularly, to a light emitting diode having an AlGaInP-based active layer and a method of manufacturing the same.

A light emitting diode is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor having a majority carrier as an electron and a P-type semiconductor having a plurality of carriers are bonded to each other, and emits predetermined light by recombination of these electrons and holes. In particular, AlGaInP-based compound semiconductors have been applied to high-quality semiconductor lasers that emit light of about 670 nm wavelength, and have been applied to light emitting diodes that emit light in the wavelength range of 560 to 680 nm by adjusting the ratio of aluminum and gallium. .

1 is a cross-sectional view for explaining a light emitting diode having a conventional AlGaInP active layer.

Referring to FIG. 1, an N-type AlGaInP lower semiconductor layer 11 is grown on an N-type GaAs substrate 10, and an AlGaInP active layer 12 is grown thereon. Subsequently, a P-type AlGaInP upper semiconductor layer 13 is grown on the AlGaInP active layer 12. These semiconductor layers can be grown using various methods, such as metalorganic chemical vapor deposition (MOCVD) or molecular beam growth (MBE) techniques. Subsequently, an electrode 14 is formed on the upper semiconductor layer 13, and an electrode 15 is formed on the rear surface of the substrate 10.

The lower semiconductor layer 11 and the upper semiconductor layer 13 are confining layers to help electrons and holes recombine in the active layer 12, and have a larger bandgap than the active layer 12. It is formed of a substance.

Since the light emitting diode is manufactured by growing AlGaInP epitaxial layers on a conductive substrate, the light emitting diode can be driven by forming an electrode 15 on the back of the substrate.

On the other hand, since the electrode 14 is formed on the upper semiconductor layer 13 having a large resistivity, the light emitting diode has a problem in current dispersion. In order to solve this problem, a technique of employing a transparent and small resistivity window layer has been disclosed in US Pat. Nos. 5,008,718 and 5,233,204. They improve the luminous efficiency by growing a window layer with small resistivity, such as GaAsP, AlGaAs or GaP, on the upper semiconductor layer 13 in order to make current distribution uniform. In addition, U.S. Pat.Nos. 5,376,580 and 5,502,316 grow AlGaInP epilayers on light absorbing substrates such as GaAs, separate the substrates, and bond the epi layers to a light transmissive substrate such as GaP, thereby improving luminous efficiency. Improving.

However, since the light emitting diode emits light by the forward current, when the conventional light emitting diode is connected to an AC power source and operated, the light emitting diode is repeatedly turned on and off according to the direction of the current. Therefore, in order to use a conventional LED directly connected to an AC power source, additional accessories such as a converter for converting AC into DC are required. These additional accessories make it difficult to replace conventional fluorescent lamps and the like with light emitting diodes due to their associated costs.

An object of the present invention is to provide an AlGaInP-based light emitting diode and a method for providing the same, which is connected to an AC power source without an AC-DC converter and is improved in current distribution performance.

Another technical problem to be achieved by the present invention is to provide an AlGaInP-based light emitting diode capable of preventing light absorption by a substrate and improving luminous efficiency and a method of manufacturing the same.

In order to achieve the above technical problem, a light emitting diode having an AlGaInP-based active layer according to an aspect of the present invention includes a base substrate. A plurality of metal patterns are spaced apart from each other on the base substrate, and an insulating layer is interposed between the base substrate and the metal patterns. Meanwhile, a plurality of light emitting cells are located on the metal patterns, respectively. Each of the light emitting cells includes a first conductive lower semiconductor layer, an AlGaInP-based active layer, and a second conductive upper semiconductor layer. In addition, wirings connect the plurality of light emitting cells in series. Accordingly, the current distribution performance in each light emitting cell is improved by the metal patterns, and each light emitting cell is connected to each other in series by wirings, thereby providing a light emitting diode that can be driven by an AC power source.

The metal patterns may each include an adhesive metal layer and a reflective metal layer. The adhesive metal layer improves adhesion between the light emitting cells and the base substrate, and the reflective metal layer reflects light from the light emitting cells toward the base substrate. Therefore, the light loss due to the light absorption of the base substrate can be prevented to improve the luminous efficiency.

The base substrate may be a conductive substrate. Since the metal patterns are electrically insulated from the conductive substrate by the insulating layer, a conductive substrate having a high thermal conductivity may be adopted to provide a light emitting diode having improved heat dissipation performance.

In each of the light emitting cells, the active layer and the upper semiconductor layer may be located on a portion of the lower semiconductor layer so that one region of the lower semiconductor layer is exposed. The wirings electrically connect one region of the exposed lower semiconductor layer of each light emitting cell and the upper semiconductor layer of the light emitting cell adjacent thereto.

Alternatively, each of the light emitting cells is positioned on a portion of the metal patterns so that one region of each of the metal patterns is exposed, and the wirings form one region of each of the exposed metal patterns and the upper semiconductor layer of the light emitting cell adjacent thereto. Can be electrically connected Accordingly, when the wirings are formed of metal, the bonding resistance of the wirings is reduced.

Meanwhile, window layers may be located on the upper semiconductor layer, respectively. The window layer is a transparent material having a low specific resistance and improves current dispersion in each light emitting cell.

According to another aspect of the present invention, there is provided a light emitting diode manufacturing method having an AlGaInP-based active layer. The method includes forming semiconductor layers including first and second conductive semiconductor layers on the sacrificial substrate and an AlGaInP-based active layer interposed between the semiconductor layers. Meanwhile, an insulating layer is formed on the base substrate separate from the sacrificial substrate. Thereafter, the insulating layer and the semiconductor layers are bonded, and the sacrificial substrate is separated from the semiconductor layers. Thereafter, the semiconductor layers are patterned to form a plurality of light emitting cells spaced apart from each other. The light emitting cells each include a patterned first conductive lower semiconductor layer, an AlGaInP-based active layer, and a second conductive upper semiconductor layer. Meanwhile, wirings are formed to connect the light emitting cells in series. Accordingly, a light emitting diode which can be driven without an AC-DC converter under an AC power source can be manufactured, and since the light emitting cells are electrically insulated from the base substrate by the insulating layer, a conductive substrate and / or a light transmissive substrate having high thermal conductivity Can be adopted as the base substrate, it is possible to improve the luminous efficiency of the light emitting diode.

The sacrificial substrate may be separated after bonding the insulating layer and the semiconductor layers, but is not limited thereto, and may be performed before bonding the semiconductor layers. In this case, the insulating layer may be bonded to a semiconductor layer located on a surface separated from the sacrificial substrate. In addition, after the other sacrificial substrate is first attached to the semiconductor layers, the sacrificial substrate may be removed, and the insulating layer of the base substrate may be bonded to the semiconductor layers. Thereafter, the other sacrificial substrate is separated.

The patterning of the semiconductor layers may be performed to expose a portion of the patterned first conductive lower semiconductor layer. Accordingly, the interconnections are connected to exposed regions of the first conductivity type lower semiconductor layers.

Meanwhile, bonding the insulating layer and the semiconductor layers may be performed through an adhesive metal layer. The adhesive metal layer is patterned to form metal patterns spaced apart from each other. Accordingly, the light emitting cells are disposed on the adhesive metal layer, thereby improving current dispersion in each light emitting cell.

In addition, a reflective metal layer may be formed on the semiconductor layers before bonding the insulating layer and the semiconductor layers. The reflective metal layer is patterned together with the adhesive metal layer to form the metal patterns. Accordingly, since the light directed from the light emitting cells toward the base substrate is reflected by the reflective metal layer and emitted to the outside, light loss caused by the base substrate can be reduced, and an opaque substrate can be adopted as the base substrate. Can be.

The adhesive metal layer may be formed on the insulating layer and / or the semiconductor layers to be interposed between the insulating layer and the semiconductor layers. In particular, when the reflective metal layer is formed on the semiconductor layers, the adhesive metal layer may be formed on the reflective metal layer. Accordingly, it is possible to prevent the reflective metal layer from being degraded by the bonding process.

The plurality of light emitting cells may further include a window layer on the second conductive upper semiconductor layer. The window layer improves current dispersion to improve luminous efficiency of the light emitting diode.

In the present specification, the "insulation layer" generally includes a semi-insulation layer having a specific resistance of about 10 ⁵ Ω · cm or more at room temperature. On the other hand, the first conductivity type and the second conductivity type are relatively used to represent N type and P type, or P type and N type, respectively. "Lower semiconductor layer" and "upper semiconductor layer" are used to mean relative positions placed thereon with respect to the base substrate.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention;

The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

2A and 2B are circuit diagrams for describing an operating principle of a light emitting diode according to embodiments of the present invention.

Referring to FIG. 2A, light emitting cells 31a, 31b, and 31c are connected in series to form a first series light emitting cell array 31, and another light emitting cells 33a, 33b, and 33c are connected in series to each other. Two series light emitting cell arrays 33 are formed. Here, the "serial light emitting cell array" means a structure in which a plurality of light emitting cells are connected in series.

Both ends of the first and second series arrays 31 and 33 are connected to an AC power source 35 and a ground, respectively. The first and second series arrays are connected in parallel between the AC power source 35 and ground. That is, both ends of the first and second series arrays are electrically connected to each other.

Meanwhile, the first and second series arrays 31 and 33 are disposed to drive the light emitting cells by currents flowing in opposite directions. That is, as shown, the anode and cathode of the light emitting cells included in the first series array 31 and the anode and the cathode of the light emitting cells included in the second series array 33 are opposite to each other. Is placed.

Therefore, when the AC power source 35 is in a positive phase, the light emitting cells included in the first series array 31 are turned on to emit light, and the light emitting cells included in the second series array 33 are turned off. On the contrary, when the AC power source 35 is in a negative phase, the light emitting cells included in the first series array 31 are turned off, and the light emitting cells included in the second series array 33 are turned on.

As a result, the first and second series arrays 31 and 33 alternately turn on and off by an AC power supply, so that the light emitting device including the first and second series arrays continuously emits light. Release.

The light emitting chips composed of one light emitting diode may be connected and driven using an AC power source as in the circuit of FIG. 2A, but the space occupied by the light emitting chips increases. However, since the light emitting device of the present invention can be driven by connecting an AC power source to one chip, the space occupied by the light emitting device does not increase.

Meanwhile, the circuit of FIG. 2A is configured such that both ends of the first and second series arrays are connected to the AC power source 35 and the ground, respectively, but the both ends may be connected to both terminals of the AC power source. In addition, the first and second series arrays are each composed of three light emitting cells, but this is only an example to help explain, and the number of light emitting cells may be further increased as necessary. In addition, the number of the serial arrays may be further increased.

Referring to FIG. 2B, the light emitting cells 41a, 41b, 41c, 41d, 41e, and 41f constitute a series light emitting cell array 41. Meanwhile, a bridge rectifier including light emitting cells D1, D2, D3, and D4 is disposed between the AC power source 45, the series light emitting cell array 41, and the ground and the series light emitting cell array 41. An anode terminal of the series light emitting cell array 41 is connected to a node between the light emitting cells D1 and D2, and a cathode terminal is connected to a node between light emitting cells D3 and D4. On the other hand, the terminal of the AC power supply 45 is connected to the node between the light emitting cells (D1, D4), the ground is connected to the node between the light emitting cells (D2, D3).

When the AC power source 45 has a positive phase, the light emitting cells D1 and D3 of the bridge rectifier are turned on and the light emitting cells D2 and D4 are turned off. Therefore, the current flows to the ground via the light emitting cell D1 of the bridge rectifier, the series light emitting cell array 41 and the light emitting cell D3 of the bridge rectifier.

On the other hand, when the AC power source 45 has a negative phase, the light emitting cells D1 and D3 of the bridge rectifier are turned off and the light emitting cells D2 and D4 are turned on. Therefore, the current flows to the AC power via the light emitting cell D2 of the bridge rectifier, the series light emitting cell array 41 and the light emitting cell D4 of the bridge rectifier.

As a result, by connecting the bridge rectifier to the series light emitting cell array 41, it is possible to continuously drive the series light emitting cell array 41 using the AC power supply 45. Here, although the terminals of the bridge rectifier are configured to be connected to the AC power source 45 and the ground, the both ends may be configured to be connected to both terminals of the AC power source.

According to the present embodiment, one series of light emitting cell arrays may be electrically connected to and driven by an AC power source, and the use efficiency of the light emitting cells may be improved as compared with the light emitting device of FIG. 2A.

3 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting diode having an AlGaInP-based active layer according to an embodiment of the present invention.

Referring to FIG. 3, an AlGaInP type interposed between a first conductivity type semiconductor layer 59, a second conductivity type semiconductor layer 55, and the first and second conductivity type semiconductor layers on the sacrificial substrate 51. Semiconductor layers including the active layer 57 are formed. In addition, the semiconductor layers may include a buffer layer 53 formed on the sacrificial substrate 51, and the window layer 54 may be formed before the second conductive semiconductor layer 55 is formed.

The substrate 51 is a single crystal substrate having a lattice constant suitable for growing an AlGaInP-based epi layer, and may be a GaAs or GaP substrate. The buffer layer 53 may be formed using metalorganic chemical mechanical deposition (MOCVD), molecular beam epitaxy (MBE), or the like. The buffer layer 53 may be an AlGaInP-based or III-V-based material having a similar lattice constant.

Meanwhile, both the first conductive semiconductor layer 59 and the second conductive semiconductor layer 55 may be formed of an AlGaInP-based compound semiconductor, and the active layer 57 may be controlled by adjusting a composition ratio of Al, Ga, and / or In. It is formed of a material having a larger band gap than. Both the first and second semiconductor layers 59 and 55 and the active layer 57 can be formed using MOCVD or MBE technology.

The window layer 54 may be formed by growing a material layer having low specific resistance, such as GaAsP, AlGaAs or GaP, while transmitting the light generated by the active layer 57, as disclosed in Nos. 5,008,718 and 5,233,204.

Referring to FIG. 4, a base substrate 71 is prepared separately from the sacrificial substrate 51, and an insulating layer 73 is formed on the base substrate 71. The base substrate 71 is selected to improve the luminous efficiency of the light emitting diode. In particular, the base substrate 71 may be a conductive substrate having high thermal conductivity, and in some embodiments, may be a light transmissive substrate. The insulating layer 73 may be an oxide layer such as SiO ₂ or a semi-insulating layer.

Subsequently, the insulating layer 73 and the semiconductor layers are bonded to face each other. The insulating layer may be directly bonded on the semiconductor layers, and alternatively, may be bonded through the adhesive metal layer 75. In addition, a reflective metal layer 61 such as Ag or Al may be interposed between the adhesive metal layer 75 and the semiconductor layers. The adhesive metal layer 75 may be formed on the semiconductor layers and / or the insulating layer 73, and the reflective metal layer 61 may be formed on the semiconductor layers. In addition, a diffusion barrier layer may be interposed between the adhesive metal layer 75 and the reflective metal layer 61. The diffusion barrier layer prevents metal elements from diffusing from the adhesive metal layer 75 into the reflective metal layer 61 to reduce the reflectance of the reflective metal layer 61.

Referring to FIG. 5, the sacrificial substrate 51 is separated from the semiconductor layers. The sacrificial substrate 51 may be separated by wet or dry etching, polishing, ion milling or a combination thereof. In this case, the buffer layer 53 may also be removed.

The sacrificial substrate 51 may be separated after bonding the insulating layer 73 and the semiconductor layers, but is not limited thereto and may be separated before bonding the insulating layer 73 and the semiconductor layers. . In this case, the insulating layer 73 may be bonded to a semiconductor layer located on a surface separated from the sacrificial substrate 51. In addition, another sacrificial substrate (not shown) is first attached to the semiconductor layers, and then the sacrificial substrate 51 is removed, and the insulating layer 73 of the base substrate 71 is bonded to the semiconductor layers. can do. Thereafter, the other sacrificial substrate is separated. On the other hand, when the insulating layer 73 is bonded to the semiconductor layer located on a surface separated from the sacrificial substrate 51, the window layer 54 is formed to be located on the first conductivity-type semiconductor layer 55 do.

Referring to FIG. 6, the semiconductor layers are patterned to form a plurality of light emitting cells spaced apart from each other. The light emitting cells may each include a patterned first conductive lower semiconductor layer 55a, an AlGaInP-based active layer 57a, and a second conductive upper semiconductor layer 59a, and may also include a patterned window layer 54a. Can be. The semiconductor layers can be patterned using photo and etching techniques.

Meanwhile, when the adhesive metal layer 61 and / or the reflective metal layer 75 and the like are interposed between the insulating layer 73 and the semiconductor layers, they are also patterned to form metal patterns 65 spaced apart from each other. The patterned first conductive lower semiconductor layer 55a may be formed to expose a portion of the first conductive type lower semiconductor layer 55a. However, when the metal patterns 65 are formed, some regions of the metal patterns 65 may be exposed, and some regions of the first conductive lower semiconductor layer 55a may not be exposed.

Referring to FIG. 7, an ohmic contact layer 78 is formed on each window layer 54a, and an ohmic contact layer 77 is formed on each exposed first conductive lower semiconductor layer 55a. . The ohmic contact layer 78 is in ohmic contact with the window layer 54a, and the ohmic contact layer 77 is in ohmic contact with the first conductivity type lower semiconductor layer 55a. Meanwhile, when some regions of the metal patterns 65 are exposed, the ohmic contact layer 77 may be omitted. In this case, the metal patterns 65 may be in ohmic contact with the first conductivity type lower semiconductor layer 55a.

Subsequently, wirings 79 electrically connecting the light emitting cells are formed by an air bridge process. The wirings 79 connect light emitting cells to form a series light emitting cell array. At least two series of light emitting cell arrays may be formed on the base substrate 71, and the arrays are arranged to be driven by currents flowing opposite to each other. Alternatively, a bridge rectifier including light emitting cells together with a series light emitting cell array may be formed on the base substrate 71. Thus, a light emitting diode that can be driven by connecting to an AC power source without an AC-DC converter is completed.

Meanwhile, the wirings connecting the light emitting cells may be formed by a step cover method, thereby completing the light emitting diode of FIG. 8. That is, after the ohmic contact layers 67 and 78 of FIG. 7 are formed, the insulating layer 87 is formed on the entire surface of the base substrate 71. The insulating layer 87 may be formed of, for example, SiO ₂ . Subsequently, the insulating layer 87 is patterned to form openings exposing the ohmic contact layers 77 and 78. Thereafter, the light emitting cells are electrically connected to each other by forming the wirings 89 on the insulating layer 87 using plating or deposition techniques.

Hereinafter, a light emitting diode according to an embodiment of the present invention will be described in detail.

Referring back to FIG. 7, the light emitting diode includes a base substrate 71. The base substrate 71 does not need to be a single crystal substrate suitable for growing AlGaInP-based epi layers, but may be a conductive substrate such as a metal substrate or a GaP substrate.

A plurality of metal patterns 65 are spaced apart from each other on the base substrate. An insulating layer 73 is interposed between the base substrate and the metal patterns to electrically insulate the metal patterns 65 from the base substrate 71. Light emitting cells are positioned on the metal patterns 65, respectively. Each of the light emitting cells includes a first conductivity type lower semiconductor layer 55a, an AlGaInP-based active layer 57a, and a second conductivity type upper semiconductor layer 59a.

The lower and upper semiconductor layers 55a and 59a may be formed of a material having a larger band gap than the active layer 57a and may be formed of an AlGaInP-based compound semiconductor. In addition, the active layer 57a may be a single quantum well or multiple quantum wells of an AlGaInP system.

Meanwhile, the upper semiconductor layer 59a is positioned on a portion of the lower semiconductor layer 55a so that one region of the lower semiconductor layer 55a is exposed, and the active layer 59a is located below the lower semiconductor layer 55a. And the upper semiconductor layers 55a and 59a. Alternatively, the semiconductor layers may be positioned on some regions of the metal patterns 65 to expose some regions of the metal patterns 65.

The window layer 54a may be positioned on each of the second conductive upper semiconductor layers 59a. The window layer may be formed of a material such as GaAsP, AlGaAs, or GaP, and may be formed of a transparent material having a lower specific resistance than the upper semiconductor layer 59a.

Meanwhile, wirings 79 electrically connect the light emitting cells. The wirings 79 connect the lower semiconductor layer 55a of one light emitting cell and the window layer 54a of the light emitting cell adjacent thereto. The wirings may include an ohmic contact layer 78 formed on the window layer 54a and an ohmic contact layer 77 formed on an exposed region of the first conductivity type lower semiconductor layer 55a. Can connect When the metal patterns 65 are exposed, the wires may connect the ohmic contact layer 78 and the metal patterns 65, respectively. Here, the wirings 79 are formed by an air bridge process, and portions except for the contact portion are physically separated from the base substrate 71 and the light emitting cells.

At least two series of light emitting cell arrays may be formed on the base substrate 71 by the wirings 79. The series light emitting cell arrays are arranged to be driven by currents flowing opposite to each other. In addition, a bridge rectifier may be disposed on the base substrate 71 together with the series light emitting cell array. Accordingly, the light emitting diode may be directly connected to an AC power source for driving.

8 is a cross-sectional view for describing a light emitting diode according to another exemplary embodiment of the present invention.

Referring to FIG. 8, except for the wiring structure connecting the light emitting cells, the light emitting diodes have the same components as the light emitting diodes of FIG. 7. That is, the wirings 89 according to the present embodiment are the wirings formed by the step cover process. To this end, all the layers of the light emitting cells and the base substrate 71 are covered with an insulating layer 87 except for portions for contacting the wirings 89. The wirings 89 are patterned on the insulating layer 87 to electrically connect the light emitting cells.

For example, the insulating layer 87 has openings exposing the ohmic contact layer 78 and the ohmic contact layer 77 or the metal pattern 65, and the wirings 89 are adjacent to each other through the openings. The light emitting cells are connected to each other in series.

According to embodiments of the present invention, it is possible to provide an AlGaInP-based light emitting diode which can be directly connected to an AC power source without an AC-DC converter and has improved current distribution performance, and a method of manufacturing the same. In addition, by separating the sacrificial substrate used to grow the epilayers and using a base substrate having excellent optical properties, it is possible to provide an AlGaInP-based light emitting diode that can prevent light absorption by the substrate and improve luminous efficiency, and a method of manufacturing the same. Can be.

Claims (17)

A base substrate; A plurality of metal patterns spaced apart from each other on the base substrate; An insulating layer interposed between the base substrate and the metal patterns; A plurality of light emitting cells on the metal patterns, each of the light emitting cells including a first conductivity type lower semiconductor layer, an AlGaInP-based active layer, and a second conductivity type upper semiconductor layer; And A light emitting diode comprising wirings for connecting the plurality of light emitting cells in series. The method according to claim 1, Each of the metal patterns includes an adhesive metal layer and a reflective metal layer. The method according to claim 1, The base substrate is a light emitting diode, characterized in that the conductive substrate. The method according to claim 1, The active layer and the upper semiconductor layer are positioned on a portion of the lower semiconductor layer so that one region of the lower semiconductor layer of each light emitting cell is exposed, and the wirings are connected to one region of the exposed lower semiconductor layer of each light emitting cell. A light emitting diode electrically connecting the upper semiconductor layer of adjacent light emitting cells. The method according to claim 1, Each of the light emitting cells is positioned on a portion of the metal patterns so that one region of each metal pattern is exposed, and the wirings electrically connect one region of each of the exposed metal patterns and the upper semiconductor layer of the light emitting cell adjacent thereto. Light emitting diode. The method according to claim 1, Each of the plurality of light emitting cells further comprises a window layer on the upper semiconductor layer. The method according to claim 1, And the light emitting cells are connected to at least two series arrays by the wirings, and the series arrays are connected in anti-parallel to each other. The method according to claim 1, And light emitting cells for bridge rectifiers on the base substrate and connected to the series connected light emitting cells. Forming semiconductor layers including first and second conductive semiconductor layers on the sacrificial substrate and an AlGaInP-based active layer interposed between the semiconductor layers, An insulating layer is formed on the base substrate, Bonding the insulating layer and the semiconductor layers, Separating the sacrificial substrate from the semiconductor layers, Patterning the semiconductor layers to form a plurality of light emitting cells spaced apart from each other, wherein the light emitting cells each include a patterned first conductive lower semiconductor layer, an AlGaInP-based active layer, and a second conductive upper semiconductor layer, A method of manufacturing a light emitting diode, the method comprising: forming wirings connecting the light emitting cells in series. The method according to claim 9, Separating the sacrificial substrate is performed before bonding the semiconductor layers. The method according to claim 9, The patterning of the semiconductor layers is performed such that a portion of each of the patterned first conductive lower semiconductor layers is exposed. The method according to claim 9, Bonding the insulating layer and the semiconductor layers is performed through an adhesive metal layer; And patterning the adhesive metal layer to form metal patterns spaced apart from each other. The method according to claim 12, And forming a reflective metal layer on the semiconductor layers prior to bonding the insulating layer and the semiconductor layers, wherein the reflective metal layer is patterned together with the adhesive metal layer. The method according to claim 12, And the adhesive metal layer is formed on the reflective metal layer and interposed between the insulating layer and the semiconductor layers. The method according to claim 9, The plurality of light emitting cells further comprises a window layer on each of the second conductive upper semiconductor layer. The method according to claim 9, And the wirings are formed such that the plurality of light emitting cells are connected to at least two series arrays. The method according to claim 9, And forming light emitting cells for a bridge rectifier, wherein the light emitting cells for the bridge rectifier are formed together while forming the plurality of light emitting cells by patterning the semiconductor layers, and the light emitting cells for the bridge rectifier are formed by wirings. A light emitting diode manufacturing method connected to the series connected light emitting cells.

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